JPH0415919A - Method of post treatment - Google Patents

Abstract

PURPOSE:To provide an Al wiring film with a high corrosion-proof performance by removing resist with oxygen plasma and removing residual deposit with plasma containing at least a hydrogen component in post treatment after an al wiring is etched. CONSTITUTION:A microwave generated by a microwave generator 1 is introduced into a treatment chamber 12 via a microwave guide tube 2 and a quartz window 3, post-treatment gas controlled by a gas flow rate control valve 9 is introduced into the treatment chamber 12 though a gas introduction port 8, and a pressure regulation valve 5 regulates the pressure in the treatment chamber 12. The introduced microwave converts the post-treatment gas into plasma. After a resist component is removed only with O2 plasma, O2, O3, inert gas or N2O gas, and methanol having a hydrogen radical are mixed and plasma- treated and a chlorine component attached to the sidewalls of an Al wiring is removed to prevent an Al wiring film form corroding.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a post-treatment method, and particularly to a post-treatment method suitable for anticorrosion treatment after etching treatment of M-based wiring materials.

[Conventional technology]

Conventional post-treatment methods include the use of fluorocarbohydrates such as (C!F
, and oxygen (02) mixed gas plasma to perform an Agunnog treatment.

[Problem that the invention aims to solve]

The above-mentioned prior art does not take into consideration the issue of removing residual deposits after the etching process. For example, M alloy layer 1M
Alloy farming + barrier metal (TiW, TiN, etc. 2N84 construction)
After etching the carburetor metal (TiVi', TiN, Maxi, etc.) or the material of the anti-reverse film 10M alloy film + barrier metal film, the residual deposits attached to the JL film to be etched cannot be sufficiently removed. Due to the local current action between wiring film materials and the chlorine component contained in the residual deposit components
There was a problem in that the child wiring film was prone to corrosion.

An object of the present invention is to provide a post-treatment method that can obtain high corrosion protection performance for M-width wiring films by individually treating the 5 resist components and the M-based residual adhesion components on the sidewalls that cause corrosion. It is in.

[Means to solve the problem]

In order to achieve the above object, the post-processing after M-based wiring etch is divided into a resist removal process and a residual deposit removal process, and the resist is removed by oxygen plasma, and the residual deposit component is converted into a component containing at least an H component. The process is performed using a plasma, for example, a plasma containing at least an H component and a 0 component, an H component and an inert gas, or a H component and an N20 gas.

[For production]

In the post-processing of the M-type wiring material, after removing the resist with oxygen (02) plasma, the remaining components attached to the M-type wiring material during the etching process, especially the chlorine component ( 0?) is H
Since it reacts with hydrogen chloride (HOl) and is effectively removed, it is possible to obtain high anticorrosion performance of the 8e wiring material.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.

FIG. 1 is an example of the post-processing IIt device used in the present invention. Although not shown in this figure, this device is connected to an etching processing device under vacuum, and j! It has a structure that can be processed continuously. The microwaves emitted by the microwave generator n1 are introduced into the processing chamber through the quartz window 3 by the microwave waveguide 2. A post-processing gas controlled by a gas flow rate control valve 9 is introduced into the processing chamber from the gas inlet 8, and the inside of the processing chamber n is fed through the exhaust port 4 by a vacuum pump and a pressure regulating valve 5 (not shown). In this state, the pressure is adjusted, and the post-processing gas is turned into plasma by the introduction of microwaves.

Note that the porous plate (3) is for releasing only radicals from the plasma generating part to the sample side. Further, the sample stage 7 has a mechanism that can heat the sample during plasma processing by a sample stage heating device I6.

An example of a process for performing post-processing using the above-mentioned apparatus will be described with reference to FIG. 182.

The etched wafer is transported to the post-processing chamber *t in FIG. 1 by a transport device (not shown). After that, first, the resist component (0
, H, etc.) are removed. Then, 02p 03+ inert gas (e.g. He, human r, etc.) or N20 gas and H
For example, methanol (OH30H) is mixed and plasma treatment is performed.

As a result, the chlorine component (O
J) reacts with the H component to produce HO/ and is removed. Furthermore, since H20 is generated and the chlorine component is dissolved and released, corrosion of the M-child wiring film can be prevented.

Next, another example of the process for performing post-processing will be described with reference to FIG.

In FIG. 3, first, the chlorine component (0/) on the side wall of the M wiring is removed from the etched wafer using plasma of a mixed gas of an inert gas not containing 02 gas and a gas having H groups. At this time, the resist is not removed. Then 0
2. Remove the resist using plasma. The effect is similar to that of the embodiment shown in FIG.

As described above, according to this embodiment I, it is possible to effectively remove the resist after the etching process of the M interconnection film and the side wall deposits containing salt remaining on the etched surface.
High corrosion protection performance can be obtained for laminated M wiring layers such as M alloy and barrier metal.

〔Effect of the invention〕

According to the present invention, it is possible to individually treat the resist components and the residual deposit components on the sidewalls that cause corrosion, and it is possible to obtain high anticorrosion performance for the M-width wiring film.

[Brief explanation of drawings]

Figure 1 shows the post-processing method of the present invention.
A vertical sectional view showing an example of the A-ring, FIG. 2 is a view showing an embodiment of the post-processing method of the zero invention, and FIG. 3 is a view showing another embodiment of the post-processing method of the present invention.

Claims (1)

[Scope of Claims] 1. A post-processing method for Al-based wiring material, characterized by comprising the steps of removing the resist with oxygen plasma in the first step, and treating with plasma containing H groups in the second step. Post-processing method. 2. A post-treatment method in which the H group-containing plasma according to claim 1 is a plasma containing an inert gas (such as ArHe), N_2O, O_2 or O_3, and an OH group. 3. In the post-processing method for Al-based wiring materials, in the first step, an inert gas and a gas having an H component are mixed, and the component ratio or flow rate ratio of the gas having an H component is 10% to 90%.
A post-processing method characterized in that the resist components are subjected to plasma treatment without being scraped, and the resist is incinerated with oxygen plasma in a second step. 4. In the post-processing method of claims 1 to 3, the microwave power for plasma emission is 200 W to 4 KW, the processing pressure is 0.4 to 2 Torr, and the wafer temperature is 100° C. to
A post-treatment method in which post-treatment is carried out at 300°C.