JPH04148505A - Production of voltage non-linearity resistor - Google Patents
Production of voltage non-linearity resistorInfo
- Publication number
- JPH04148505A JPH04148505A JP2274097A JP27409790A JPH04148505A JP H04148505 A JPH04148505 A JP H04148505A JP 2274097 A JP2274097 A JP 2274097A JP 27409790 A JP27409790 A JP 27409790A JP H04148505 A JPH04148505 A JP H04148505A
- Authority
- JP
- Japan
- Prior art keywords
- mixed
- sio2
- raw material
- particle size
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002245 particle Substances 0.000 claims abstract description 55
- 239000000126 substance Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 44
- 239000000654 additive Substances 0.000 claims description 24
- 230000000996 additive effect Effects 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 10
- 238000010298 pulverizing process Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 239000002002 slurry Substances 0.000 abstract description 14
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011230 binding agent Substances 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 3
- 239000007921 spray Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract description 2
- 230000009257 reactivity Effects 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000014692 zinc oxide Nutrition 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 238000004945 emulsification Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
Ａ、産業上の利用分野
本発明は、添加原料にＳｉＯ□を含み、例えば酸化亜鉛
のような無機物質を主原料とする電圧非直線抵抗体の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method for manufacturing a voltage nonlinear resistor containing SiO□ as an additive raw material and using an inorganic material such as zinc oxide as a main raw material.
８８発明の概要
本発明は、添加原料に５ｉｎ２を含み、例えば酸化亜鉛
のような無機物質よりなる主原料粉末と上記添加原料と
より製造される非直線抵抗体の製造方法において、上記
添加原料の５ｉ０２を上記主原料の粉末より粒径の小さ
い粉末として他の添加原料と混合粉砕を行った後主原料
粉末と混合を行うことにより混合度を高めて電気特性を
向上させるようにしたものである。88 Summary of the Invention The present invention provides a method for manufacturing a non-linear resistor that includes 5in2 as an additive raw material and is manufactured from a main raw material powder made of an inorganic substance such as zinc oxide and the above additive raw material. 5i02 is made into a powder with a smaller particle size than the above-mentioned main raw material powder, mixed with other additive raw materials and pulverized, and then mixed with the main raw material powder to increase the degree of mixing and improve the electrical properties. .
Ｃ０従来の技術
従来、無機物質を主成分とする電圧非直線抵抗体の主原
料には通常酸化亜鉛（ＺｎＯ）が用いられており、また
電圧非直線性誘発原料である添加原料として、Ｂ ｉ２
０３、ＳｉＯ□、ＣＯ２Ｏ３，５ｂ２０３等が用いられ
ている。C0 Prior Art Conventionally, zinc oxide (ZnO) has been normally used as the main raw material for voltage nonlinear resistors that are mainly composed of inorganic substances, and B i2 has been used as an additive raw material that induces voltage nonlinearity.
03, SiO□, CO2O3, 5b203, etc. are used.
このような電圧非直線抵抗体は以下の方法により製造さ
れる。Such a voltage nonlinear resistor is manufactured by the following method.
（１）電圧非直線性を誘発するＢ ｉ２０３．５ｉ０２
、Ｃｏ２Ｏ３，５ｂ２０３等の添加成分を主原料のＺｎ
Ｏに対して５〜１５％となるように計量し、撹拌中の純
水に固形分濃度が４０〜６０％となるよう投入する。(1) B i203.5i02 that induces voltage nonlinearity
, Co2O3, 5b203, etc. are added to the main raw material Zn.
It is weighed so that it is 5 to 15% based on O, and added to pure water under stirring so that the solid content concentration is 40 to 60%.
これを１０分以上混合した後、振動ミル等へ投入し、３
〜８時間混合粉砕し、添加原料スラリーを得る。After mixing this for more than 10 minutes, put it into a vibrating mill etc. and
Mix and grind for ~8 hours to obtain additive raw material slurry.
（２）次にバインダー溶液及びＺｎＯを投入して、十分
にスラリー化した乳化槽の中に前項で製造した添加原料
スラリーを投入し、全体を１〜５時間時間子分に乳化混
合する。これにより生成したスラリーをスプレードライ
ヤー等で噴霧乾燥して成形し易い粉体を得る。(2) Next, the binder solution and ZnO are put in, and the additive raw material slurry produced in the previous section is put into the emulsification tank which has been sufficiently slurried, and the whole is emulsified and mixed for 1 to 5 hours. The slurry thus produced is spray-dried using a spray dryer or the like to obtain a powder that is easy to mold.
（３）上記のように得られた粉体を乾式成形プレスに所
定量充填し、圧力を２００〜５００ｋｇ／ｃｍ２として
直径６０ｍｍで厚さ３０ｍｍの形状の成形体を得る。(3) A predetermined amount of the powder obtained as described above is filled into a dry molding press, and a pressure of 200 to 500 kg/cm2 is applied to obtain a molded body having a diameter of 60 mm and a thickness of 30 mm.
（４）成形後、９００〜１０００℃にて数時間仮焼し、
冷却後側面に絶縁体を塗布して再度１１００〜１２５０
℃にて１０時間程度焼成して両端面を研磨した後、端面
にアルミニウムの電極をつけて完成する。(4) After molding, calcining at 900 to 1000°C for several hours,
After cooling, apply insulator to the side surface and heat again to 1100~1250
After baking at ℃ for about 10 hours and polishing both end faces, aluminum electrodes are attached to the end faces to complete the process.
通常上記ＺｎＯの粉末には工業用の各種用途に用いられ
る亜鉛華を使用する。Usually, zinc white, which is used for various industrial purposes, is used as the ZnO powder.
この亜鉛華の粒子は平均粒径が非常に小さく、その粒径
は０．３〜１．０μｍの範囲内に分布しており、粉体物
性も比較的−様である。The average particle size of the zinc white particles is very small, and the particle sizes are distributed within the range of 0.3 to 1.0 μm, and the powder physical properties are also relatively similar.
しかし、電圧非直線性誘発原料であるＢ ｉ２０３、Ｃ
ｏ２Ｏ３，５ｂ２０８等の平均粒径は通常３−５μｍ程
度となっており、また５１０２は粒径が１０〜３０μｍ
と亜鉛華の粒径に比して更に大きい。However, B i203, C which is the voltage nonlinearity inducing raw material
The average particle size of o2O3, 5b208, etc. is usually about 3-5 μm, and 5102 has a particle size of 10-30 μm.
This is even larger than the particle size of zinc white.
このように粒径が大きく不揃いな上記添加原料を直接Ｚ
ｎＯに混合して乳化した場合、微視的には混合が十分行
われないため焼結時の反応性が悪くなる。In this way, the above additive raw materials with large and irregular particle sizes can be directly
When mixed with nO and emulsified, the reactivity during sintering deteriorates because the mixing is not microscopically sufficient.
従って、非直線性電圧抵抗体を製造する際には特願昭６
２−２３９３９２号公報に開示されるように上記添加物
の湿式混合粉砕を行って平均粒径をＺｎＯ粒子の平均粒
径以下としている。Therefore, when manufacturing a nonlinear voltage resistor, it is necessary to
As disclosed in Japanese Patent No. 2-239392, the above additives are wet mixed and pulverized to have an average particle size equal to or less than the average particle size of ZnO particles.
Ｄ１発明が解決しようとする課題
しかし、上記のように添加物原料を湿式混合粉砕して添
加物全体の平均粒径を主原料の平均粒径より小としても
、大粒径の粒体が一部残ってしまう。D1 Problem to be Solved by the Invention However, even if the additive raw materials are wet-mixed and pulverized as described above to make the average particle size of the entire additive smaller than the average particle size of the main raw material, the large particle size particles Some parts will remain.
特にＳｉＯ２はモース硬度が６．５〜８．０と他の原料
添加物に比して非常に大きいため、湿式混合粉砕を行っ
ても大粒径の粒体が残り易く、更に５ｉｎ２は焼成温度
の１１．００℃〜１２５０″Ｃ稈度の温度では溶解しな
い。In particular, SiO2 has a Mohs hardness of 6.5 to 8.0, which is very large compared to other raw material additives, so even if wet mixing and pulverization is performed, large particles tend to remain. It does not melt at temperatures of 11.00°C to 1250″C culm.
従って、焼成時に上記のように大粒径の５ｉ０２が存在
すると、周囲の粒子との収縮率の差により内部ピンホー
ル等が発生し、その結果歩留まりが低下する。Therefore, if 5i02 with a large particle size is present during firing as described above, internal pinholes etc. will occur due to the difference in shrinkage rate with surrounding particles, resulting in a decrease in yield.
また、粉砕時間を長くして５ｉ０２の粒径を小さくする
と、時間がかかり過ぎるうえ、玉石等の不純物の混入量
が増加して粉砕効率が悪くなり、更に製造された電圧非
直線抵抗体の電気特性に悪影響を及ぼす。In addition, if the particle size of 5i02 is reduced by increasing the grinding time, it will take too much time, and the amount of impurities such as cobbles will increase, reducing the grinding efficiency. adversely affect characteristics.
本発明はこのような背景の下になされたものであり、５
ｉ０２の粒径を小さくして主原料と添加物原料との混合
度を高くすることにより電気特性を向上し、これにより
歩留まりを向上することを目的とする。The present invention was made against this background, and
The purpose is to improve electrical properties by reducing the particle size of i02 and increasing the degree of mixing between the main raw material and the additive raw material, thereby improving the yield.
Ｅ０課題を解決するための手段及び作用上記の課題を解
決するため、本発明は無機物質よりなる主原料粉末と、
他の添加原料とを湿式混合粉砕して得られる平均粒子径
が上記主原料粉末に比して小であるスラリー状生成物と
を混合し、これを造粒して得られる微粒粉を焼結する工
程を備えた電圧非直線抵抗体の製造方法において、上記
添加原料内のＳｉＯ□の粒径を５μｍ以下としたことを
特徴とする。Means and operation for solving the E0 problem In order to solve the above problems, the present invention provides a main raw material powder made of an inorganic substance,
A slurry-like product obtained by wet mixing and pulverization of other additive raw materials and having an average particle size smaller than that of the main raw material powder is mixed, and the resulting fine powder is sintered by granulating it. The method for manufacturing a voltage nonlinear resistor is characterized in that the particle size of SiO□ in the additive raw material is 5 μm or less.
Ｇ、実施例
本実施例においては平均粒径が夫々４０μｍ１２０μｍ
１１０μｍ、 ５μｍ、１μｍである５ｉ０２試料に対
して添加原料スラリーを作成して粒度分布を測定し、更
にこれら各スラリーにより主原料の無機物質をＺｎＯと
した電圧非直線抵抗体を作成して各々の電気的特性等を
測定した。その詳細を以下に示す。G. Example In this example, the average particle size was 40 μm and 120 μm, respectively.
An additive raw material slurry was prepared for the 5i02 samples with sizes of 110 μm, 5 μm, and 1 μm, and the particle size distribution was measured.Furthermore, a voltage nonlinear resistor using ZnO as the main raw material inorganic material was created using each of these slurries. Electrical characteristics etc. were measured. The details are shown below.
即ち、主原料に対して１ｗｔ％の上記５ｉ０２試料と、
主原料に対してｌ ２ｗｔ％のＢｉ２Ｏ２、Ｃｏ２０．
．５ｂｚＯｓ等の原料添加物とを混合して撹拌中の純水
に固形分濃度が５０％となるよう投入し、１０分以上混
合を行う。That is, the above 5i02 sample of 1 wt% based on the main raw material,
Bi2O2, Co20.12wt% based on the main raw materials.
．． The mixture is mixed with raw material additives such as 5bzOs and added to pure water under stirring so that the solid content concentration becomes 50%, and the mixture is mixed for 10 minutes or more.
その後、上記混合液を振動ミルに投入し混合粉砕を行っ
て添加原料スラリーを作成し、その粒度分布を遠心沈降
式粒度分布測定器等により測定する。本実施例において
は、上記混合粉砕時間を平均粒径４０μｍのＳｉＯ□を
用いたスラリーの平均粒径がＺｎＯの平均粒径よりも小
さい０．８μｍとなった時間である６時間に統一した。Thereafter, the above-mentioned liquid mixture is put into a vibrating mill, mixed and pulverized to prepare an additive raw material slurry, and its particle size distribution is measured using a centrifugal sedimentation type particle size distribution analyzer or the like. In this example, the mixing and pulverizing time was unified to 6 hours, which is the time when the average particle size of the slurry using SiO□ with an average particle size of 40 μm became 0.8 μm, which is smaller than the average particle size of ZnO.
次に上記添加原料スラリーにバインダー溶液及びＺｎＯ
を投入し、十分にスラリー化を行って主原料スラリーを
作成する。これを乳化槽の中に投入して全体の乳化混合
を２時間行い、乳化したスラリーをスプレードライヤー
で噴霧乾燥して夫々造粒粉を得る。Next, binder solution and ZnO are added to the above additive raw material slurry.
and sufficiently slurry it to create the main raw material slurry. This was put into an emulsification tank and emulsified and mixed as a whole for 2 hours, and the emulsified slurry was spray-dried with a spray dryer to obtain granulated powders.
更に、得られた造粒粉を直径６０ｍｍ、高さ３０ｍｍの
金型で円板形にプレス成形して１１００〜１２５０℃に
て１０時間焼成して両端を研磨し、成形体を得る。Further, the obtained granulated powder is press-molded into a disc shape using a mold having a diameter of 60 mm and a height of 30 mm, and is fired at 1100 to 1250° C. for 10 hours and both ends are polished to obtain a molded body.
更にまた、上記成形体を超音波探傷器にて直径０、２ｍ
ｍ以上の気孔の有無を検査して内部ピンホール発生率の
確認を行い、その後上記両端面にＡｌを溶射して電極を
形成し、電圧非直線抵抗体を製造した。Furthermore, the above molded body was inspected using an ultrasonic flaw detector with a diameter of 0.2 m.
The occurrence rate of internal pinholes was confirmed by inspecting the presence or absence of pores of m or more in size, and then Al was thermally sprayed on both end faces to form electrodes, thereby producing a voltage nonlinear resistor.
上記工程により、各平均粒径の５ｉＱ２試料の夫々につ
いて電圧非直線抵抗体を作成し、内部ピンホール発生率
と、４７１０μ５ｌｏｏｋＡ破壊率と、添加物粉砕後の
１０μｍ以上の粒子の存在率とを測定した結果を夫々第
１図、第２図、第３図に示す。Through the above process, a voltage nonlinear resistor was created for each of the 5iQ2 samples with each average particle size, and the internal pinhole generation rate, 4710μ5lookA destruction rate, and the presence rate of particles of 10μm or more after additive pulverization were measured. The results are shown in FIGS. 1, 2, and 3, respectively.
上記測定結果により、原料５ｉ０２の平均粒径を５μｍ
以下とすると、内部ピンホール発生率、粒径が１０μｍ
以上の粒子の残存率及び４／１ｏμＳ・１００ｋＡの放
電耐量破壊率も０となっている。Based on the above measurement results, the average particle size of raw material 5i02 was determined to be 5 μm.
Assuming the following, the internal pinhole generation rate and particle size are 10 μm
The residual rate of the above particles and the 4/1 μS/100 kA discharge withstand breakdown rate were also 0.
従って、原料５ｉＱ２の粒径を５μｍ以下にすると、焼
結性が良く電気特性も良好な電圧非直線抵抗体が得られ
ることがわかる。Therefore, it can be seen that when the particle size of the raw material 5iQ2 is set to 5 μm or less, a voltage nonlinear resistor with good sinterability and good electrical properties can be obtained.
また、上記製造工程において添加原料を混合、粉砕して
得られる生成物の平均粒径が０．８μｍより小さく、か
つ最大粒径が１０μｍ以下とするために要する粉砕時間
及び不純物混入量を原料５ｉｎ２の各粒径値に対して測
定した結果を第４図に示す。In addition, in the above manufacturing process, the grinding time and amount of impurities mixed in to make the product obtained by mixing and grinding the additive raw materials so that the average particle size is smaller than 0.8 μm and the maximum particle size is 10 μm or less are calculated based on the raw material 5in2. FIG. 4 shows the measurement results for each particle size value.
第４図においては平均粒径を５μｍ１１０μｍ１４０μ
ｍとして測定を行った結果を夫々グラフ１．２．３に示
しており、また粉砕時間が長く生産性が悪い範囲及び不
純物混入量過多により電気特性が低下する範囲にハツチ
ングを施している。In Figure 4, the average particle size is 5 μm, 110 μm, and 140 μm.
The results of measurements taken as m are shown in graphs 1.2.3, and hatching is applied to the range where the grinding time is long and productivity is poor, and the range where electrical properties are degraded due to excessive amount of impurities mixed in.
これにより、原料ＳｉＯ□の平均粒径を１０μｍまたは
４０μｍとすると測定結果は上記ハツチングを施した範
囲に含まれるのに対し、平均粒径を５μｍとした測定結
果は上記ハツチング範囲には含まれず、生産性及び電気
特性の双方共に満たされることがわかる。As a result, if the average particle size of the raw material SiO It can be seen that both productivity and electrical characteristics are satisfied.
Ｈ１発明の効果
本発明によれば、原料５ｉ０２の平均粒径を小としたこ
とにより焼成時における粒径が１０μｍ以上となるＳｉ
Ｏ□粒子の発生を抑制しており、従って粒径１０μｍ以
上の５ｉｎ２により生起されていた内部ピンホールの発
生が抑制され、よって得られる電圧非直線抵抗体の電気
的特性が向上する。H1 Effects of the Invention According to the present invention, by reducing the average particle size of the raw material 5i02, the Si material has a particle size of 10 μm or more during firing.
The generation of O□ particles is suppressed, and therefore the generation of internal pinholes caused by 5in2 with a particle size of 10 μm or more is suppressed, thereby improving the electrical characteristics of the voltage nonlinear resistor obtained.
更に、添加原料の混合粉砕時間を短縮でき、生産性が向
上するという効果も得られる。Furthermore, the time for mixing and pulverizing the added raw materials can be shortened, and productivity can be improved.
第１図は５ｉ０２平均粒径と内部ピンホール発生率の相
関図、第２図はＳｉＯ□平均粒径と４／１０μｓ・１０
０ｋＡ破壊率の相関図、第３図は５ｉ０２平均粒径と原
料添加物粉砕後の粒径１０μｍ以上の粒子の存在率の相
関図、第４図は５ｉ０２平均粒径と粉砕メディア混入量
及び添加物粉砕時間の相関図である。
外する
第１図
ＳｉＯ２平８１粒督と内部ピンホール発生率の相関図第
２図
５１０２平均粒径と４／１０Ｊｉｓ
１００ｋＡ！Ｊｊｌｌの８間１ｆｆ１
０．１５ Ｔｏ ２０ ４０
Ｓ１０２平均粒径（μｍ）Figure 1 is a correlation diagram between 5i02 average grain size and internal pinhole generation rate, Figure 2 is a correlation diagram between SiO□ average grain size and 4/10μs・10
Correlation diagram of 0kA fracture rate, Figure 3 is a correlation diagram of 5i02 average particle size and abundance rate of particles with a particle size of 10 μm or more after raw material additive crushing, Figure 4 is a correlation diagram of 5i02 average particle size and amount of grinding media mixed and addition It is a correlation diagram of object crushing time. Fig. 1 Correlation diagram between SiO2 Hei 81 grain director and internal pinhole generation rate Fig. 2 5102 average grain size and 4/10Jis 100kA! Jjll's 8 to 1ff1 0.15 To 20 40 S102 average particle size (μm)
Claims (1)
を湿式混合粉砕して得られる平均粒子径が上記主原料粉
末に比して小であるスラリー状生成物とを混合し、これ
を造粒して得られる微粒粉を焼結する工程を備えた電圧
非直線抵抗体の製造方法において、 上記添加原料内のＳｉＯ＿２の粒径を５μｍ以下とした
ことを特徴とする電圧非直線抵抗体の製造方法。(1) A main raw material powder made of an inorganic substance and a slurry-like product obtained by wet mixing and pulverization of other additive raw materials and having a smaller average particle diameter than the above-mentioned main raw material powder; A voltage nonlinear resistor manufacturing method comprising a step of sintering fine powder obtained by granulating a voltage nonlinear resistor, characterized in that the particle size of SiO_2 in the additive raw material is 5 μm or less. How the body is manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2274097A JPH04148505A (en) | 1990-10-12 | 1990-10-12 | Production of voltage non-linearity resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2274097A JPH04148505A (en) | 1990-10-12 | 1990-10-12 | Production of voltage non-linearity resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04148505A true JPH04148505A (en) | 1992-05-21 |
Family
ID=17536952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2274097A Pending JPH04148505A (en) | 1990-10-12 | 1990-10-12 | Production of voltage non-linearity resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04148505A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8535862B2 (en) | 2010-07-07 | 2013-09-17 | Ricoh Company, Ltd. | Electrophotographic photoreceptor, image forming apparatus, and process cartridge |
| US8637216B2 (en) | 2010-10-25 | 2014-01-28 | Ricoh Company, Ltd. | Electrophotographic photoreceptor, image forming apparatus and process cartridge for image forming apparatus |
-
1990
- 1990-10-12 JP JP2274097A patent/JPH04148505A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8535862B2 (en) | 2010-07-07 | 2013-09-17 | Ricoh Company, Ltd. | Electrophotographic photoreceptor, image forming apparatus, and process cartridge |
| US8637216B2 (en) | 2010-10-25 | 2014-01-28 | Ricoh Company, Ltd. | Electrophotographic photoreceptor, image forming apparatus and process cartridge for image forming apparatus |
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