JPH03257902A - Manufacture of voltage nonlinear resistor - Google Patents
Manufacture of voltage nonlinear resistorInfo
- Publication number
- JPH03257902A JPH03257902A JP2055029A JP5502990A JPH03257902A JP H03257902 A JPH03257902 A JP H03257902A JP 2055029 A JP2055029 A JP 2055029A JP 5502990 A JP5502990 A JP 5502990A JP H03257902 A JPH03257902 A JP H03257902A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- zinc oxide
- mixing
- nonlinear resistor
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 45
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011787 zinc oxide Substances 0.000 claims abstract description 22
- 238000002156 mixing Methods 0.000 claims abstract description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 16
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000011230 binding agent Substances 0.000 claims abstract description 11
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 abstract description 7
- 238000000465 moulding Methods 0.000 abstract description 6
- 239000002002 slurry Substances 0.000 abstract description 6
- 238000001879 gelation Methods 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 4
- 238000005469 granulation Methods 0.000 abstract description 3
- 230000003179 granulation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000010298 pulverizing process Methods 0.000 abstract description 3
- 239000000654 additive Substances 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 2
- VDWRUZRMNKZIAJ-UHFFFAOYSA-N tetradecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCN VDWRUZRMNKZIAJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、酸化亜鉛を主成分とする電圧非直線抵抗体の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a voltage nonlinear resistor containing zinc oxide as a main component.
(従来の技術)
従来から、酸化亜鉛(ZnO)を主成分とし、Biz0
3. PrJ++、 5b2o2.5io2. CO2
0a、 MnL等の少量の添加物を副成分として含有し
た抵抗体は、優れた電圧非直線性を示すことか広く知ら
れており、その性質を利用して避雷器等に使用されてい
る。(Conventional technology) Conventionally, zinc oxide (ZnO) is the main component, and Biz0
3. PrJ++, 5b2o2.5io2. CO2
Resistors containing small amounts of additives such as 0a and MnL as subcomponents are widely known to exhibit excellent voltage nonlinearity, and are used in lightning arresters and the like by taking advantage of this property.
この酸化亜鉛を主成分とする電圧非直線抵抗体を製造す
るには、酸化亜鉛を主成分とする原料に上述した種々の
金属酸化物を添加して、デイスパーミルまたはアトライ
タを使用して混合した後、造粒、成形、焼成していた。To manufacture this voltage nonlinear resistor whose main component is zinc oxide, the various metal oxides mentioned above are added to the raw material whose main component is zinc oxide, and the mixture is mixed using a disper mill or an attritor. , granulation, molding, and firing.
(発明か解決しようとする課題)
しかしなから、上述したデイスパーミルを使用した混合
では、装置の機構上混合が不充分な場合かあり、その結
果焼成後の素子か不均一で電気的特性が低下する問題か
あった。(Problem to be solved by the invention) However, when mixing using the above-mentioned disper mill, the mixing may be insufficient due to the mechanism of the device, and as a result, the elements after firing are uneven and the electrical characteristics are deteriorated. There was a problem.
また、アトライタを使用した場合は、添加剤原料とZn
O原料の混合にあたって、添加剤の原料粒径か大きすぎ
ると混合、分散が不充分で、その結果焼成後の素子が不
均一で電気的特性か低下する問題もあった。さらに、粉
砕メディアとしてステアタイトボールを使用すると素子
原料へのコンタミネーションが増加し、また温度制御が
ないとスラリーかゲル化し、いずれの場合も素子の電気
的特性が低下する問題かあった。In addition, when using an attritor, additive raw materials and Zn
When mixing O raw materials, if the particle size of the additive raw materials is too large, mixing and dispersion will be insufficient, resulting in a problem that the fired device will be non-uniform and its electrical properties will deteriorate. Furthermore, when steatite balls are used as the grinding media, contamination of the element raw material increases, and if there is no temperature control, slurry or gelation occurs, and in either case there is a problem that the electrical characteristics of the element deteriorate.
本発明の目的は上述した課題を解消して、素子の均一性
を達成し、良好な電気的特性を得ることかできる電圧非
直線抵抗体の製造方法を提供しようとするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a voltage nonlinear resistor that can solve the above-mentioned problems, achieve element uniformity, and obtain good electrical characteristics.
(課題を解決するための手段)
本発明の電圧非直線抵抗体の製造方法は、酸化亜鉛を主
成分とする原料に、酸化ビスマス等の金属酸化物を添加
、混合、焼成して得られる電圧非直線抵抗体の製造方法
において、金属酸化物の混合物を所定粒度以下まで微粉
砕し、得られた微粉砕後の混合物を酸化亜鉛、結合剤、
分散剤とともにジルコニアボールを用いたアトライタで
40℃以下の温度で所定時間混合した後、造粒、成形、
焼成することを特徴とするものである。(Means for Solving the Problems) The method for manufacturing a voltage nonlinear resistor of the present invention involves adding a metal oxide such as bismuth oxide to a raw material whose main component is zinc oxide, mixing it, and firing it. In a method for manufacturing a non-linear resistor, a mixture of metal oxides is pulverized to a predetermined particle size or less, and the resulting pulverized mixture is mixed with zinc oxide, a binder,
After mixing with a dispersant in an attritor using zirconia balls at a temperature of 40°C or less for a predetermined time, granulation, molding,
It is characterized by being fired.
(作 用)
上述した構成において、所定粒度以下、好ましくは平均
粒径5μm以下、さらに好ましくは3μm以下まで金属
酸化物を微粉砕して、大部分を占める酸化亜鉛原料の粒
度との粒度差を小さくすることにより、酸化亜鉛と金属
酸化物との混合、分散を良好にでき、その結果素子の均
一性か向上し良好な電気的特性を得ることかできる。特
にアトライタによる混合では、金属酸化物の微粉砕化の
前処理が必要である。(Function) In the above configuration, the metal oxide is finely pulverized to a predetermined particle size or less, preferably an average particle size of 5 μm or less, more preferably 3 μm or less, and the difference in particle size from the particle size of the zinc oxide raw material, which accounts for the majority, is reduced. By reducing the size, the zinc oxide and metal oxide can be mixed and dispersed well, and as a result, the uniformity of the device can be improved and good electrical characteristics can be obtained. In particular, mixing using an attritor requires pretreatment to finely pulverize the metal oxide.
また、微粉砕混合物と酸化亜鉛、結合剤、分散剤をジル
コニアボールを用いたアトライタで40℃以下の温度で
所定時間混合しているため、酸化亜鉛と金属酸化物との
混合、分散かより良好になるとともにメディアからのコ
ンタミネーションもなくなり、またスラリーのゲル化を
防止することか可能となり、素子の均一性が向上しさら
に良好な電気的特性を得ることかできる。In addition, since the finely ground mixture, zinc oxide, binder, and dispersant are mixed in an attritor using zirconia balls at a temperature of 40°C or less for a predetermined period of time, the mixing and dispersion of zinc oxide and metal oxide is better. At the same time, contamination from the media is eliminated, gelation of the slurry can be prevented, the uniformity of the device is improved, and even better electrical characteristics can be obtained.
ここで、混合のための時間は1〜lO時間か好ましく、
より好ましくは2〜5時間である。結合剤としては、ポ
リビニルアルコール、ヒドロキシプロピルセルロース、
ポリエチレングリコール、カルボキシメチルセルロース
、エチルセルロース等が使用される。分散剤としては、
テトラデシルアミン酢酸塩、ポリカルボン酸型高分子水
溶液等が使用される。また、メディアとしてのジルコニ
アボールとしては、酸化マグネシウム(MgO)または
酸化カルシウム(Cab)等で安定化したジルコニアも
使用できるが、酸化イツトリウム(Y2O2)で安定化
したジルコニアを使用すると好ましい。また、これらM
gO,Cab、 Y20a夫々て安定化されたジルコニ
ア粉末を混合して製造されたジルコニアボールはコスト
面と強度等の特性面で有利であり好ましい。さらに、混
合温度はスラリーゲル化防止のため40℃以下、好まし
くは35℃以下である。Here, the time for mixing is preferably 1 to 10 hours,
More preferably, it is 2 to 5 hours. As a binder, polyvinyl alcohol, hydroxypropyl cellulose,
Polyethylene glycol, carboxymethyl cellulose, ethyl cellulose, etc. are used. As a dispersant,
Tetradecylamine acetate, polycarboxylic acid type polymer aqueous solution, etc. are used. Further, as the zirconia balls as the media, zirconia stabilized with magnesium oxide (MgO) or calcium oxide (Cab), etc. can also be used, but it is preferable to use zirconia stabilized with yttrium oxide (Y2O2). Also, these M
Zirconia balls manufactured by mixing zirconia powders stabilized with gO, Cab, and Y20a are advantageous in terms of cost and properties such as strength, and are therefore preferable. Further, the mixing temperature is 40° C. or lower, preferably 35° C. or lower to prevent slurry gelation.
(実施例)
酸化亜鉛を主成分とする電圧非直線抵抗体を得るには、
まず0.1〜3μmの所定の粒度に調整した酸化亜鉛原
料と、所定粒度以下、好ましくは5μm以下、さらに好
ましくは3μm以下の粒度に調整した微粉の酸化ビスマ
ス、酸化コバルト、酸化マンガン、酸化アンチモン、酸
化クロム、好ましくは非晶質の酸化ケイ素、酸化ニッケ
ル、酸化ホウ素、酸化銀等よりなる添加物の所定量をア
トライタで結合剤及び分散剤とともに混合する。なお、
この場合酸化銀、酸化ホウ素の代わりに硝酸銀、ホウ酸
を用いてもよい。好ましくは銀を含むホウケイ酸ビスマ
スガラスを用いるとよい。(Example) To obtain a voltage nonlinear resistor whose main component is zinc oxide,
First, a zinc oxide raw material adjusted to a predetermined particle size of 0.1 to 3 μm, and a fine powder of bismuth oxide, cobalt oxide, manganese oxide, and antimony oxide adjusted to a particle size of less than a predetermined particle size, preferably less than 5 μm, and more preferably less than 3 μm. A predetermined amount of an additive consisting of chromium oxide, preferably amorphous silicon oxide, nickel oxide, boron oxide, silver oxide, etc., is mixed with a binder and a dispersant in an attritor. In addition,
In this case, silver nitrate or boric acid may be used instead of silver oxide or boron oxide. Preferably, bismuth borosilicate glass containing silver is used.
尚、アトライタでの混合はメディアとして前述の材質の
ジルコニアボールを用い、アジテータアーム(撹拌棒)
も前述の材質の安定化されたジルコニアを用い、タンク
の内張りは有機性樹脂(好ましくはナイロン樹脂)を用
いるとコンタミネーションが極めて少なくなり好ましい
。また、スラリー温度が40℃を越えないように管理す
ることによりスラリー〇ゲル化か防止でき、酸化亜鉛と
金属酸化物か良好に分散・混合し、均−混合及び混合効
率の面て好ましい。For mixing in the attritor, zirconia balls made of the material mentioned above are used as the media, and an agitator arm (stirring rod) is used.
It is also preferable to use the above-mentioned stabilized zirconia material, and to use an organic resin (preferably nylon resin) for the lining of the tank, since contamination will be extremely reduced. Furthermore, by controlling the slurry temperature so as not to exceed 40°C, gelation of the slurry can be prevented, and the zinc oxide and metal oxide can be well dispersed and mixed, which is preferable in terms of uniform mixing and mixing efficiency.
次に好ましくは200 mmHg以下の真空度で減圧脱
気を行い混合泥漿を得る。ここに混合泥漿の水分量は3
0〜35wt%程度に、またその混合泥漿の粘度は10
0±50cpとするのが好ましい。次に得られた混合泥
漿を噴霧乾燥装置に供給して平均粒径50〜150μm
、好ましくは80〜120μmで、水分量か0.5〜2
.0 wt%、より好ましくは0.9〜1.5 wt%
の造粒粉を造粒する。次に得られた造粒粉を、成形工程
において、成形圧力800〜7000kg/a[12の
下て所定の形状に成形する。成形は通常の圧縮成形のほ
か、静水圧成形等で行ってもよい。Next, deaeration is performed under reduced pressure, preferably at a vacuum level of 200 mmHg or less, to obtain a mixed slurry. Here, the water content of the mixed slurry is 3
0 to 35 wt%, and the viscosity of the mixed slurry is 10
It is preferable to set it to 0±50 cp. Next, the obtained mixed slurry was fed to a spray dryer to have an average particle size of 50 to 150 μm.
, preferably 80 to 120 μm, and a moisture content of 0.5 to 2
.. 0 wt%, more preferably 0.9-1.5 wt%
The granulated powder is granulated. Next, the obtained granulated powder is molded into a predetermined shape under a molding pressure of 800 to 7000 kg/a [12] in a molding step. Molding may be carried out not only by ordinary compression molding but also by isostatic pressing.
そして、その成形体を昇降温速度100℃/hr以下で
800〜1000℃、保持時間1〜5時間という条件で
仮焼成する。なお、仮焼成の前に成形体を昇降温速度1
00℃/hr以下で400〜600″C1保持時間1−
10時間で結合剤等を飛散除去することか好ましい。Then, the molded body is pre-fired under conditions of a heating/cooling rate of 100° C./hr or less, a temperature of 800° C. to 1000° C., and a holding time of 1 to 5 hours. In addition, before calcining, the molded body is heated at a temperature increase/decrease rate of 1.
400-600″C1 holding time 1- at 00℃/hr or less
It is preferable to scatter and remove the binder etc. in 10 hours.
次に仮焼成した仮焼体の側面に絶縁被覆層を形成する。Next, an insulating coating layer is formed on the side surface of the calcined body.
本願発明ては、Bi2O3,5b20z、 ZnO,S
iO2等の所定量に有機結合剤としてエチルセルロース
、ブチルカルピトール、酢酸nブチル等を加えた絶縁被
覆用混合物ペーストを、60〜300μmの厚さに仮焼
体の側面に塗布する。次に、これを昇降温速度20〜6
0℃/hr 、1000〜1300″C好ましくは10
50〜1250℃13〜7時間という条件で本焼成する
。In the present invention, Bi2O3,5b20z, ZnO,S
An insulating coating mixture paste prepared by adding organic binders such as ethyl cellulose, butyl calpitol, n-butyl acetate, etc. to a predetermined amount of iO2, etc. is applied to the side surface of the calcined body to a thickness of 60 to 300 μm. Next, this temperature increase/decrease rate is 20-6
0°C/hr, 1000~1300″C preferably 10
Main firing is performed at 50 to 1250°C for 13 to 7 hours.
なお、ガラス粉末に有機結合剤としてエチルセルロース
、ブチルカルピトール、酢酸nブチル等を加えたガラス
ペーストを前記の絶縁被覆層上に100〜300μmの
厚さに塗布し、空気中で昇降温速度50〜200℃/h
r 400〜800℃保持時間0.5〜5時間という条
件で熱処理することによりガラス層を形成すると好まし
い。A glass paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder is applied to a thickness of 100 to 300 μm on the above-mentioned insulating coating layer, and the temperature is raised and cooled in air at a rate of 50 to 300 μm. 200℃/h
r It is preferable to form the glass layer by heat treatment at 400 to 800°C for a holding time of 0.5 to 5 hours.
その後、得られた電圧非直線抵抗体の両端面をSiC,
Al2O3,ダイヤモンド等の#400〜2000相当
の研磨剤により水好ましくは油を研磨液として使用して
研磨する。次に、研磨面を洗浄後、研磨した両端面に例
えばアルミニウム等によって電極を例えば溶射により設
けて電圧非直線抵抗体を得ている。After that, both end faces of the obtained voltage nonlinear resistor were bonded to SiC,
Polishing is performed with a polishing agent equivalent to #400 to #2000 such as Al2O3 or diamond using water, preferably oil, as the polishing liquid. Next, after cleaning the polished surfaces, electrodes made of aluminum or the like are provided on both polished end surfaces by, for example, thermal spraying to obtain a voltage nonlinear resistor.
前述の実施例では、酸化ビスマス系バリスタについて記
載したが、酸化ビスマスを酸化プラセオジウムで置換し
た酸化プラセオジウム系バリスタについても同様の方法
で実施できる。In the above embodiments, a bismuth oxide varistor was described, but the same method can be applied to a praseodymium oxide varistor in which bismuth oxide is replaced with praseodymium oxide.
以下、実際の例について説明する。An actual example will be explained below.
実施例
上述した方法に従って、Bi2O3,CO3O4,Mn
O2゜5b203. Cr2O5,Nio、 SiO□
を各々0.1〜2.0モル%、銀を含むホウケイ酸ビス
マスガラス0.01〜0.3wt%よりなる金属酸化物
の添加剤を、第1表に示すようにボールミルにより粉砕
するか粉砕しないで混合物を得た。第1表中の()内の
値はその添加剤の平均粒径を示す。次に、得られた混合
物と酸化亜鉛原料を、第1表に示す混合方法で第1表に
示す温度で第1表に示す玉石を使用して混合し、その後
造粒、成形、焼成して、直径47肛、厚さ22.5mm
の形状でバリスタ電圧(vIA)か280V/mmの第
1表に示す本発明試験Nα1〜7と比較例試験Nα1〜
5の電圧非直線抵抗体を得た。なお、アトライターによ
る混合は3時間とし、結合剤はポリビニルアルコール、
分散剤はテトラデシルアミン酢酸塩を用いた。EXAMPLE According to the method described above, Bi2O3, CO3O4, Mn
O2゜5b203. Cr2O5,Nio, SiO□
A metal oxide additive consisting of 0.1 to 2.0 mol% of each and 0.01 to 0.3 wt% of bismuth borosilicate glass containing silver is pulverized by a ball mill or ground as shown in Table 1. A mixture was obtained. The values in parentheses in Table 1 indicate the average particle size of the additive. Next, the obtained mixture and the zinc oxide raw material are mixed by the mixing method shown in Table 1 at the temperature shown in Table 1 using the cobblestones shown in Table 1, and then granulated, molded, and fired. , diameter 47 mm, thickness 22.5 mm
The present invention tests Nα1-7 and the comparative example tests Nα1-7 shown in Table 1 with a shape of varistor voltage (vIA) of 280 V/mm
A voltage nonlinear resistor of No. 5 was obtained. The mixing time using the attritor was 3 hours, and the binder was polyvinyl alcohol,
Tetradecylamine acetate was used as a dispersant.
得られた本発明例および比較例の抵抗体に対して、焼成
体の欠陥発生率、電圧非直線指数α、制限電圧比、開閉
サージ耐量破壊率をそれぞれ測定した。結果を第1表に
示す。ここで、焼成体欠陥発生率は、超音波探傷試験に
より直径0.5mm以上の欠陥が存在する抵抗体の割合
として求めた。電圧非直線指数αは、α= (1#og
(Vl、A/V100μA))より求めた。制限電圧
比は、バリスタ電圧■4゜。The defect occurrence rate, voltage nonlinearity index α, limiting voltage ratio, and switching surge withstand breakdown rate of the fired bodies were measured for the obtained resistors of the inventive example and the comparative example, respectively. The results are shown in Table 1. Here, the defect occurrence rate of the fired body was determined as the percentage of resistors in which defects with a diameter of 0.5 mm or more were present by an ultrasonic flaw detection test. The voltage nonlinearity index α is α= (1#og
(Vl, A/V100μA)). The limiting voltage ratio is the varistor voltage ■4°.
とVIAの比より求めた。開閉サージ耐量破壊率は、8
00A、 100OAの電流を2msの電流値形て20
回繰り返し印加した後破壊したものの割合として求めた
。It was calculated from the ratio of VIA and VIA. The opening/closing surge resistance breakdown rate is 8
00A, 100OA current with 2ms current value form 20
It was calculated as the percentage of those that were destroyed after repeated application.
第1表の結果から、所定の添加剤粉砕を実施し、所定の
混合を実施した本発明試験Nα1〜7は、比較例試験N
cLl〜5と比べて良好な電気的特性を有することがわ
かった。また、本発明例のなかでも、玉石としてY2O
3安定化ジルコニアからなるボールを使用したものは、
その他のものより良好な電気的特性か得られることかわ
かった。From the results in Table 1, it can be seen that the present invention tests Nα1 to Nα7, in which the predetermined additive pulverization and predetermined mixing were carried out, are the comparative example tests Nα1 to Nα7.
It was found that it had better electrical characteristics compared to cLl~5. Moreover, among the examples of the present invention, Y2O is used as a cobblestone.
Those using balls made of tri-stabilized zirconia are
It was found that better electrical characteristics could be obtained than the others.
(発明の効果)
以上の説明から明らかなように、本発明の電圧非直線抵
抗体の製造方法によれば、金属酸化物を所定粒度以下ま
で微粉砕するとともに、得られた微粉砕粉末を所定の方
法で酸化亜鉛と混合することにより、素子の均一性か向
上し、その結果電気的特性も向上した電圧非直線抵抗体
を得ることかできる。(Effects of the Invention) As is clear from the above explanation, according to the method for manufacturing a voltage nonlinear resistor of the present invention, a metal oxide is finely pulverized to a predetermined particle size or less, and the obtained finely pulverized powder is By mixing it with zinc oxide in the method described above, the uniformity of the element is improved, and as a result, a voltage nonlinear resistor with improved electrical characteristics can be obtained.
8−8-
Claims (1)
金属酸化物を添加、混合、焼成して得られる電圧非直線
抵抗体の製造方法において、金属酸化物の混合物を所定
粒度以下まで微粉砕し、得られた微粉砕後の混合物を酸
化亜鉛、結合剤、分散剤とともにジルコニアボールを用
いたアトライタで40℃以下の温度で所定時間混合した
後、造粒、成形、焼成することを特徴とする電圧非直線
抵抗体の製造方法。1. In a method for manufacturing a voltage nonlinear resistor obtained by adding, mixing, and firing a metal oxide such as bismuth oxide to a raw material whose main component is zinc oxide, the mixture of metal oxides is pulverized to a predetermined particle size or less. The resulting finely pulverized mixture is mixed with zinc oxide, a binder, and a dispersant in an attritor using zirconia balls at a temperature of 40°C or less for a predetermined time, and then granulated, molded, and fired. A method of manufacturing a voltage nonlinear resistor.
Priority Applications (1)
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---|---|---|---|
JP2055029A JP2836893B2 (en) | 1990-03-08 | 1990-03-08 | Method of manufacturing voltage non-linear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2055029A JP2836893B2 (en) | 1990-03-08 | 1990-03-08 | Method of manufacturing voltage non-linear resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03257902A true JPH03257902A (en) | 1991-11-18 |
JP2836893B2 JP2836893B2 (en) | 1998-12-14 |
Family
ID=12987243
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JP2055029A Expired - Lifetime JP2836893B2 (en) | 1990-03-08 | 1990-03-08 | Method of manufacturing voltage non-linear resistor |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108863344A (en) * | 2018-10-10 | 2018-11-23 | 贵州大学 | A kind of preparation process of high-performance ZnO voltage-sensitive ceramic |
CN115490510A (en) * | 2022-09-28 | 2022-12-20 | 江西百新电瓷电气有限公司 | Manufacturing method of lightning arrester resistor disc |
CN116835973A (en) * | 2023-06-16 | 2023-10-03 | 华中科技大学 | Bismuth oxide coated zinc oxide powder and preparation method and application thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58188102A (en) * | 1982-04-28 | 1983-11-02 | 株式会社東芝 | Method of producing nonlinear resistor |
JPS6182401A (en) * | 1984-09-29 | 1986-04-26 | 株式会社東芝 | Voltage non-linearity resistor and manufacture thereof |
JPS61139002A (en) * | 1984-12-11 | 1986-06-26 | 株式会社東芝 | Manufacture of non-linear resistor |
JPS62237704A (en) * | 1986-04-09 | 1987-10-17 | 日本碍子株式会社 | Manufacture of voltage nonlinear resistance element |
-
1990
- 1990-03-08 JP JP2055029A patent/JP2836893B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58188102A (en) * | 1982-04-28 | 1983-11-02 | 株式会社東芝 | Method of producing nonlinear resistor |
JPS6182401A (en) * | 1984-09-29 | 1986-04-26 | 株式会社東芝 | Voltage non-linearity resistor and manufacture thereof |
JPS61139002A (en) * | 1984-12-11 | 1986-06-26 | 株式会社東芝 | Manufacture of non-linear resistor |
JPS62237704A (en) * | 1986-04-09 | 1987-10-17 | 日本碍子株式会社 | Manufacture of voltage nonlinear resistance element |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108863344A (en) * | 2018-10-10 | 2018-11-23 | 贵州大学 | A kind of preparation process of high-performance ZnO voltage-sensitive ceramic |
CN108863344B (en) * | 2018-10-10 | 2024-02-23 | 贵州大学 | Preparation process of high-performance ZnO pressure-sensitive ceramic |
CN115490510A (en) * | 2022-09-28 | 2022-12-20 | 江西百新电瓷电气有限公司 | Manufacturing method of lightning arrester resistor disc |
CN116835973A (en) * | 2023-06-16 | 2023-10-03 | 华中科技大学 | Bismuth oxide coated zinc oxide powder and preparation method and application thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2836893B2 (en) | 1998-12-14 |
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