JPH04142453A - Detecting method for crack growth length - Google Patents
Detecting method for crack growth lengthInfo
- Publication number
- JPH04142453A JPH04142453A JP26480790A JP26480790A JPH04142453A JP H04142453 A JPH04142453 A JP H04142453A JP 26480790 A JP26480790 A JP 26480790A JP 26480790 A JP26480790 A JP 26480790A JP H04142453 A JPH04142453 A JP H04142453A
- Authority
- JP
- Japan
- Prior art keywords
- crack
- resistance element
- crack growth
- length
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title description 8
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000011810 insulating material Substances 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 40
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- -1 Festel Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、材料のき裂進展長さの検出方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for detecting the length of crack growth in a material.
従来の技術
第４図は、材料のき裂進展長さを検出する従来のき裂検
出ゲージ１の例を示し、第５図はそのき裂検出ゲージの
き裂進展時の様子を示している。Conventional technology Fig. 4 shows an example of a conventional crack detection gauge 1 that detects the length of crack growth in a material, and Fig. 5 shows the state of the crack detection gauge when a crack propagates. .
き裂検出ゲージ１はベース２、抵抗素子３及びリード線
４で構成されている。ベース２はフェノール、フェステ
ル、ポリイミドなどの高分子材料が用いられ、抵抗素子
３としてはＣｕ−Ｎｉ箔が用いられている。このき裂検
出ゲージ１の中央部における抵抗素子３は複数に分割さ
れかつ分割された幅が狭（形成されて両端にあるリード
線４にそれぞれ接続されたパターンを有している。The crack detection gauge 1 includes a base 2, a resistance element 3, and a lead wire 4. The base 2 is made of a polymeric material such as phenol, Festel, or polyimide, and the resistance element 3 is made of Cu--Ni foil. The resistance element 3 in the center of the crack detection gauge 1 is divided into a plurality of parts, each having a narrow width (formed in pattern) and connected to the lead wires 4 at both ends.
このようなき裂検出ゲージ１はき裂を検出しようとする
材料に接着剤で貼り付けられる。材料にき裂が生じた場
合、き裂検出ゲージ１にもき裂５が発生する。き裂５が
進展して（ると、き裂検出ゲージ１の抵抗素子３のパタ
ーンが切断され、この結果リード線４が接続された抵抗
素子、３の両端における抵抗値が変化する。この抵抗値
はき裂５が進展するにつれて高くなる方向に変化するの
で、この抵抗値の変化を読み取ることで、き裂５の進展
長さを求めることができるのである。Such a crack detection gauge 1 is attached with an adhesive to a material whose cracks are to be detected. When a crack occurs in the material, a crack 5 also occurs in the crack detection gauge 1. As the crack 5 grows (as a result, the pattern of the resistance element 3 of the crack detection gauge 1 is cut, and as a result, the resistance value at both ends of the resistance element 3 to which the lead wire 4 is connected changes. The value changes in the direction of increasing as the crack 5 progresses, so by reading the change in this resistance value, the growth length of the crack 5 can be determined.
発明が解決しようとする課題
ところで、従来のき裂進展長さ検出方法では、き裂検出
ゲージ１を材料に接着剤で貼り付けて使用しているため
、き裂５が材料、接着剤及びべ一ス２を介して抵抗素子
３のパターンに伝達されることになる。Problems to be Solved by the Invention However, in the conventional crack growth length detection method, the crack detection gauge 1 is attached to the material with an adhesive. It is transmitted to the pattern of the resistive element 3 via the first path 2.
又、従来のき裂検出ゲージ１では抵抗素子３のパターン
のき裂進展方向の間隔が０．５１程度であるため、それ
以下のき製造展長さは検出することができない。Furthermore, in the conventional crack detection gauge 1, since the interval between the patterns of the resistive element 3 in the direction of crack propagation is approximately 0.51, it is not possible to detect a crack extension length smaller than that.
このように、従来のき製造展長さ検出方法では、き裂検
出ゲージ１を材料に貼り付けてき裂を検出するようにし
ているため、き裂の検出感度が悪く、更に、き製造展長
さの分解能が０．５１程度とあまり高くない、といった
問題があった。In this way, in the conventional method for detecting the length of cracking, the crack detection gauge 1 is attached to the material to detect cracks, which results in poor crack detection sensitivity and further increases the length of the cracking. There was a problem that the resolution of the image was not very high at about 0.51.
本発明は上記事情にかんがみてなされたもので、き製造
展長さの検出感度及び検出精度を向上させた検出方法を
提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a detection method that improves the detection sensitivity and detection accuracy of the developed length.
課題を解決するための手段
上記目的に対し、本発明によれば、抵抗素子の中央部に
てき裂進展方向に抵抗素子材料と絶縁材料とを交互に配
置してき製造展時の抵抗素子材料及び絶縁材料の切断に
よる抵抗素子の抵抗値変化でき裂の進展長さを検出する
き裂検出センサを、被検出材料のき裂発生予定箇所に形
成させることを特徴とするき製造展長さ検出方法が提供
される。Means for Solving the Problems To achieve the above object, according to the present invention, the resistance element material and the insulation material are arranged alternately in the direction of crack propagation in the central part of the resistance element, so that the resistance element material and the insulation material are A method for detecting the length of manufacturing expansion, characterized by forming a crack detection sensor at a location where a crack is expected to occur in a material to be detected, which detects the length of crack growth based on a change in the resistance value of a resistive element due to cutting of the material. provided.
作用
上記手段によれば、材料のき裂発生予定箇所にき裂検出
センサを直接蒸着させて形成しており、材料のき裂はき
裂検出センサにおいても直接的に発生させることを可能
とし、又、抵抗素子材料のパターンを十分に細く形成す
ることを可能としている。これにより、き製造展に伴っ
て抵抗素子材料のパターンが切断されていくとき、それ
に応じて変化する抵抗値は長さに正確かつ精度良く対応
し、正確なき製造展長さが求められる。According to the above means, the crack detection sensor is formed by directly vapor depositing the crack detection sensor at the location where a crack is expected to occur in the material, and it is possible to directly generate a crack in the material also in the crack detection sensor. Furthermore, it is possible to form a sufficiently thin pattern of the resistor element material. As a result, when the pattern of the resistive element material is cut during manufacturing, the resistance value that changes accordingly corresponds to the length accurately and precisely, and an accurate manufacturing length can be determined.
実施例
以下第１図ないし第３図に例示した本発明の好適な実施
例について詳述する。EXAMPLES Below, preferred embodiments of the present invention illustrated in FIGS. 1 to 3 will be described in detail.
第１図は本発明によるき製造展長さ検出方法で使用され
るき裂検出センサの形成方法を示し、第２図は形成され
たき裂検出センサの水平断面を示し、第３図はき裂検出
時の様子を示している。Fig. 1 shows a method for forming a crack detection sensor used in the crack manufacturing length detection method according to the present invention, Fig. 2 shows a horizontal cross section of the formed crack detection sensor, and Fig. The state at the time of detection is shown.
これらの図において、符号６はき裂検出センサ、７はき
裂が発生する材料、８はベースとなる絶縁材料（八ｈａ
ｓ）、９は抵抗素子材料（ＴｉＮ、 ＣｒＮ）、１０は
マスキング材である。In these figures, numeral 6 is a crack detection sensor, 7 is the material where the crack occurs, and 8 is the base insulating material (8 ha
s), 9 is a resistance element material (TiN, CrN), and 10 is a masking material.
き裂検出センサ６の形成は第１図に示すとおりである。The formation of the crack detection sensor 6 is as shown in FIG.
すなわち、（１）材料７の表面にベースとしての絶縁材
料８をＣＶＤ（化学蒸着）法又はＰＶＤ（物理蒸着）法
でコーティングする。（２）さらに、その上に抵抗素子
材料９をＣＶＤ法又はＰＶＤ法でコーティングする。（
３）抵抗素子材料９を所定のパターンにするため、抵抗
素子材料９の表面にパターンのマスキング材１０を乗せ
る。（４）エツチングにより抵抗素子材料９の不要部を
除去する。That is, (1) the surface of the material 7 is coated with the insulating material 8 as a base by a CVD (chemical vapor deposition) method or a PVD (physical vapor deposition) method. (2) Further, a resistive element material 9 is coated thereon by CVD or PVD. (
3) In order to form the resistive element material 9 into a predetermined pattern, a pattern masking material 10 is placed on the surface of the resistive element material 9. (4) Remove unnecessary portions of the resistance element material 9 by etching.
（５）マスキング材を除去する。そして（６）抵抗素子
材料９の上に絶縁材料をＣＶＤ法又はＰＶＤ法でコーテ
ィングする。(5) Remove the masking material. (6) An insulating material is coated on the resistance element material 9 by CVD or PVD.
このようにして、被検出材料のき裂発生予定箇所の表面
にき裂検出センサ６が直接形成される。In this way, the crack detection sensor 6 is directly formed on the surface of the target material where a crack is expected to occur.
このき裂検出センサ６は第２図においてよく見られるよ
うに、その中央部で、き裂進展方向に、抵抗素子材料９
と絶縁材料８とが交互に配置され、き裂進展方向に直角
な方向の複数本の細長い抵抗素子材料９の両端はリード
線４が接続される領域に接続されている。したがって、
き装発生前は、それら細長い抵抗素子材料９が全てリー
ド線４に並列に接続されているので、その抵抗値は最も
低い値を有する。なお、抵抗素子材料９の中央部にてこ
れらを分離している細長い絶縁材料８は、図示の例では
２本としであるが、必要に応じて、多数設けることがで
きる。又、その抵抗素子材料９と絶縁材料８との間隔は
たとえば０，０１〜Ｑ、１ｍｍの範囲で設定することが
できる。As can be clearly seen in FIG.
and insulating material 8 are arranged alternately, and both ends of a plurality of elongated resistance element materials 9 in a direction perpendicular to the crack propagation direction are connected to a region to which the lead wire 4 is connected. therefore,
Before the cracking occurs, all of the elongated resistance element materials 9 are connected in parallel to the lead wire 4, so that their resistance value has the lowest value. In the illustrated example, there are two elongated insulating materials 8 that separate the resistive element materials 9 at their central portions, but a large number of them can be provided as necessary. Further, the distance between the resistive element material 9 and the insulating material 8 can be set in the range of 0.01 to Q.1 mm, for example.
き裂検出センサ６は、材料７にき裂５が発生すると、第
３図に示したように、ベースの絶縁材料８とともに抵抗
素子材料９が切断されるため、リード線４間の抵抗値が
変化する。この変化率はき裂の進展長さに対応させるこ
とができ、抵抗値を知ることで、き製造展長さを求める
ことができる。In the crack detection sensor 6, when a crack 5 occurs in the material 7, the resistance element material 9 is cut together with the insulating material 8 of the base, as shown in FIG. Change. This rate of change can be made to correspond to the crack growth length, and by knowing the resistance value, the crack growth length can be determined.
発明の効果
本発明によれば、材料のき裂発生予定箇所に形成される
き裂検出センサでは、き裂進展方向の抵抗素子材料の間
隔が０．０１〜Ｑ、 １４ｇであり、従来のき裂検出ゲ
ージの０．５■■に比べて間隔が小さいので長さ分解能
が向上する。Effects of the Invention According to the present invention, in a crack detection sensor formed at a location where a crack is expected to occur in a material, the distance between the resistance element materials in the direction of crack propagation is 0.01 to Q, 14 g, which is different from the conventional crack detection sensor. The length resolution is improved because the spacing is smaller than the 0.5■■ of the crack detection gauge.
又、本発明のき裂検出センサは、ベースの絶縁材料に例
えば＾１２０３、抵抗素子材料にたとえばＴｉＮやＣｒ
Ｎを用いており、従来のき裂検出ゲージにおけるベース
の高分子材料、抵抗素子のＣｕ−Ｎｉ箔に比べて、延性
が低く、少ないき裂開日量で容易に破断するので、き裂
検出感度が向上する。Further, in the crack detection sensor of the present invention, the insulating material of the base is made of, for example, ^1203, and the material of the resistance element is made of, for example, TiN or Cr.
Compared to the base polymer material of conventional crack detection gauges and the Cu-Ni foil of the resistance element, it has lower ductility and breaks easily with fewer crack opening days, making it suitable for crack detection. Sensitivity is improved.
したがりて、本発明は、従来のき裂検出ゲージに比べ、
高精度かつ高感度でき裂長さを検出することができる。Therefore, compared to conventional crack detection gauges, the present invention has the following advantages:
Crack length can be detected with high accuracy and sensitivity.
第１図は本発明によるき製造展長さ検出方法に使用され
るき裂検出センサの形成方法を示す垂直断面図、第２図
はその水平断面図、第３図はき裂検出センサの作用を示
す説明図、第４図は従来のき裂検出ゲージの構成図、第
５図はその作用を示す説明図である。
４・・リード線、５・・き裂、６・・き裂検出センサ、
・材料、
・絶縁材料、
・・抵
抗素子材料、
１０・
・マスキング材。Fig. 1 is a vertical cross-sectional view showing a method of forming a crack detection sensor used in the method for detecting the length of crack manufacturing according to the present invention, Fig. 2 is a horizontal cross-sectional view thereof, and Fig. 3 is an operation of the crack detection sensor. FIG. 4 is a configuration diagram of a conventional crack detection gauge, and FIG. 5 is an explanatory diagram showing its operation. 4. Lead wire, 5. Crack, 6. Crack detection sensor, ・Material, ・Insulating material, ・Resistance element material, 10. ・Masking material.
Claims (1)
縁材料とを交互に配置してき裂進展時の抵抗素子材料及
び絶縁材料の切断による抵抗素子の抵抗値変化でき裂の
進展長さを検出するき裂検出センサを、被検出材料のき
裂発生予定箇所に形成させることを特徴とするき裂進展
長さ検出方法。Resistance element material and insulating material are arranged alternately in the direction of crack propagation in the center of the resistance element, and the length of the crack growth is detected by the change in resistance value of the resistance element due to cutting of the resistance element material and insulating material when the crack propagates. A crack growth length detection method comprising forming a crack detection sensor at a location where a crack is expected to occur in a material to be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26480790A JPH04142453A (en) | 1990-10-02 | 1990-10-02 | Detecting method for crack growth length |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26480790A JPH04142453A (en) | 1990-10-02 | 1990-10-02 | Detecting method for crack growth length |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04142453A true JPH04142453A (en) | 1992-05-15 |
Family
ID=17408490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26480790A Pending JPH04142453A (en) | 1990-10-02 | 1990-10-02 | Detecting method for crack growth length |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04142453A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017161250A (en) * | 2016-03-07 | 2017-09-14 | 大日本印刷株式会社 | Wiring board for detection to detect abnormality in structure, structure abnormality detection device, and structure abnormality detection system |
-
1990
- 1990-10-02 JP JP26480790A patent/JPH04142453A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017161250A (en) * | 2016-03-07 | 2017-09-14 | 大日本印刷株式会社 | Wiring board for detection to detect abnormality in structure, structure abnormality detection device, and structure abnormality detection system |
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