JPH04139097A - Growth method for organic metal - Google Patents
Growth method for organic metalInfo
- Publication number
- JPH04139097A JPH04139097A JP25833090A JP25833090A JPH04139097A JP H04139097 A JPH04139097 A JP H04139097A JP 25833090 A JP25833090 A JP 25833090A JP 25833090 A JP25833090 A JP 25833090A JP H04139097 A JPH04139097 A JP H04139097A
- Authority
- JP
- Japan
- Prior art keywords
- group
- gaseous
- nitrogen
- substrate
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000002184 metal Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 150000002902 organometallic compounds Chemical class 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 5
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 15
- 150000004767 nitrides Chemical class 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 238000003486 chemical etching Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 32
- 239000007789 gas Substances 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 238000010348 incorporation Methods 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は■−ｖ族化合物半導体の有機金属成長法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an organometallic growth method for a ■-v group compound semiconductor.
（従来の技術）
近年、高速度、高密度情報処理システムの発展に伴い、
短波長レーザの実現が望まれている。(Conventional technology) In recent years, with the development of high-speed, high-density information processing systems,
The realization of short wavelength lasers is desired.
特に小型、軽量、省電力という応用上の要求から半導体
素子による実現が不可欠である。In particular, realization using semiconductor elements is essential due to application requirements such as small size, light weight, and power saving.
本発明者らは先に短波長発光素子として、ＢＰとＧａＡ
ＩＮの超格子層またはＢＰとＧａＡＩＮの混晶を用いた
■−Ｖ族化合物半導体素子を発明している。その際、ナ
イトライド層のＮの原料としてはアンモニアを用いてい
た。また、一般にＧａＮなどのナイトライド層の成長に
もアンモニアが使われている。The present inventors previously developed BP and GaA as short wavelength light emitting elements.
He has invented a -V group compound semiconductor device using a superlattice layer of IN or a mixed crystal of BP and GaAIN. At that time, ammonia was used as the raw material for N in the nitride layer. Ammonia is also generally used to grow nitride layers such as GaN.
Ｎを含む層を成長する場合、高温で成長を行うとＮが蒸
発し結晶中から抜けてしまうので、できるだけ低温で成
長を行うことが望ましい。しかし、アンモニアは分解温
度が非常に高く、低温で成長を行うには、極めて大量の
アンモニアが必要であつた・
（発明が解決しようとする課題）
上記従来の技術によれば、ナイトライド層の結晶成長に
その窒素の原料としてアンモニアを用いるため、比較的
低温度で成長を行うことができなかった。When growing a layer containing N, it is desirable to grow it at as low a temperature as possible because if it is grown at a high temperature, N will evaporate and come out of the crystal. However, ammonia has a very high decomposition temperature, and an extremely large amount of ammonia is required for growth at low temperatures. Because ammonia is used as the nitrogen source for crystal growth, growth cannot be performed at relatively low temperatures.
本発明は上記アンモニアに代わる窒素原料を提供し、制
御性に優れた結晶成長を可能にして良質のナイトライド
層を得ることを目的とする。The object of the present invention is to provide a nitrogen raw material to replace the ammonia mentioned above, to enable crystal growth with excellent controllability, and to obtain a high-quality nitride layer.
（課題を解決するための手段）
本発明の骨子は、ナイトライド層を具備する■−■族化
合物半導体素子を有機金属成長法により製造する際に、
水素−窒素結合を持たない窒素原子を有する有機金属化
合物を用いることにより、結晶中への窒素の取り込まれ
を促進し良質のナイトライド層を形成し高品質のｍ−ｖ
族化合物半導体素子を提供することにある。(Means for Solving the Problems) The gist of the present invention is that when manufacturing a ■-■ group compound semiconductor device having a nitride layer by an organometallic growth method,
By using an organometallic compound that has a nitrogen atom that does not have a hydrogen-nitrogen bond, it promotes the incorporation of nitrogen into the crystal and forms a high-quality nitride layer, resulting in high-quality m-v.
An object of the present invention is to provide a group compound semiconductor device.
（作 用）
従来の方法で、結晶中に窒素の取込まれが低いのはアン
モニアの分解温度が高いことに原因があり、このアンモ
ニアの分解温度が高いのは、Ｈ−Ｎ結合の結合エネルギ
ーが９３．４ｋｃａｌ／ ｍｏｌと非常に高いことによ
る。それに対してＣ−Ｎ結合の結合エネルギーが６９．
７ｋｃａｌ／ ｍｏｌ、Ｎ−Ｎ結合では３８．４ｋｃａ
ｌ／ ｍｏｌと低く、低温での分解か可能となり、結晶
中への窒素の取り込まれが促進される。(Function) In the conventional method, the low incorporation of nitrogen into the crystal is due to the high decomposition temperature of ammonia, and the high decomposition temperature of ammonia is due to the bond energy of the H-N bond. This is because the amount is extremely high at 93.4 kcal/mol. On the other hand, the bond energy of the C-N bond is 69.
7kcal/mol, 38.4kca for N-N bond
It is low in l/mol and can be decomposed at low temperatures, promoting the incorporation of nitrogen into the crystal.
そこで、窒素の原料として水素−窒素結合を持たない窒
素原子を有する有機金属化合物を用いることにより、結
晶中への窒素の取り込まれを促進し良質のナイトライド
層を得ることが可能になり、高品質のｍ−ｖ族化合物半
導体素子を提供できる。Therefore, by using an organometallic compound containing a nitrogen atom without a hydrogen-nitrogen bond as a raw material for nitrogen, it is possible to promote the incorporation of nitrogen into the crystal and obtain a high-quality nitride layer. A high quality m-v group compound semiconductor device can be provided.
また、■族−窒素結合を有する場合には、結晶中への■
族の取り込まれと同時に窒素が効率的に取り込まれる。In addition, when it has a group ■ nitrogen bond,
Nitrogen is efficiently taken up at the same time as the group is taken up.
特にアジド基を有する場合には、１分子中に含まれる窒
素原子の数が多く、結晶中に窒素はより取り込まれやす
い。In particular, when it has an azide group, the number of nitrogen atoms contained in one molecule is large, and nitrogen is more easily incorporated into the crystal.
このように、本発明による方法であれば結晶中への窒素
の取り込まれを増大することが可能であり、高品質の短
波長発光素子が得られ、産業上の要求に十分応えられる
。As described above, the method according to the present invention makes it possible to increase the incorporation of nitrogen into the crystal, thereby providing a high quality short wavelength light emitting device, which satisfactorily meets industrial requirements.
（実施例） 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第３図に本発明の一実施例方法に使用した成長装置を断
面図で示す。図中１１は石英製の反応管（反応炉）であ
り、この反応管ｌｌ内にはガス導入口１２から原料混合
ガスが導入される。そして、反応管ＩＩ内のガスはガス
排気口１３から排気されるものとなっている。反応管１
１内には、カーボン製のサセプタ１４が配置されており
、試料基板１５はこのサセプタ１４上に載置される。ま
たサセプタ１４は高周波コイル１６により誘導加熱され
、これに埋設された熱電対１７によって試料基板１５が
測温されるようになっている。FIG. 3 shows a cross-sectional view of a growth apparatus used in a method according to an embodiment of the present invention. In the figure, reference numeral 11 denotes a reaction tube (reactor) made of quartz, into which a raw material mixed gas is introduced from a gas inlet 12. The gas in the reaction tube II is then exhausted from the gas exhaust port 13. Reaction tube 1
A susceptor 14 made of carbon is placed inside the susceptor 1 , and the sample substrate 15 is placed on this susceptor 14 . Further, the susceptor 14 is heated by induction by a high frequency coil 16, and the temperature of the sample substrate 15 is measured by a thermocouple 17 embedded therein.
次に、上記装置を用いた結晶成長方法について説明する
。Next, a crystal growth method using the above apparatus will be explained.
まず、化学エツチングにより表面清浄化したＧａＰ基板
１５を前記サセプタ１４上に載置する。ガス導入管１２
から高純度水素を毎分２．５Ｑ導入し１反応管１１内の
大気を置換する。次いで、ガス排気口１３をロータリー
ポンプに接続し、反応管ＩＩ内を減圧し、内部の圧力を
２０〜３００ｔｏｒｒの範囲に設定する。First, a GaP substrate 15 whose surface has been cleaned by chemical etching is placed on the susceptor 14 . Gas introduction pipe 12
2.5 Q/min of high-purity hydrogen is introduced from the reactor tube 11 to replace the atmosphere inside one reaction tube 11. Next, the gas exhaust port 13 is connected to a rotary pump, the pressure inside the reaction tube II is reduced, and the internal pressure is set in the range of 20 to 300 torr.
その後ガス導入口１２からＰＨ，ガスを導入し、高周波
コイル１６によりサセプタ及び基板１５を加熱し基板温
度５５０〜１１５０℃で３０分間′保持して基板の清浄
化を行う。Thereafter, PH and gas are introduced from the gas inlet 12, the susceptor and the substrate 15 are heated by the high frequency coil 16, and the substrate temperature is maintained at 550 to 1150 DEG C. for 30 minutes to clean the substrate.
次いで、ｐＨ，ガスをＮＨ３ガスまたはＨ２ガスに切り
替えると共に（ＣＨ３）２［１ａＮ３をＩ Ｘ １０−
５ｍｏｌ／ ｍｉｎ導入して成長を行なった６
上記有機金属化合物は、本発明でいう水素−窒素結合を
持たない窒素原子を一分子中に少なくとも一個有する有
機金属化合物、■族−窒素結合を有する有機金属化合物
、アジド基を有する有機金属化合物、Ｒ２ＭＮ、（Ｒ；
アルキル基、Ｍ；■族元素）である有機金属化合物の一
例として挙げたものである。Next, while changing the pH and gas to NH3 gas or H2 gas, (CH3)2[1aN3 is
The above organometallic compound is an organometallic compound having at least one nitrogen atom in one molecule that does not have a hydrogen-nitrogen bond as defined in the present invention, an organic compound having a group Metal compound, organometallic compound having an azide group, R2MN, (R;
This is an example of an organometallic compound that is an alkyl group (M; group ■ element).
なお１本発明に係る上記■族−窒素結合を有する有機金
属化合物については次にあげる一般式と構造式を例示す
る。The following general formula and structural formula are exemplified as examples of the organometallic compound having a group (1)-nitrogen bond according to the present invention.
（ａ）
Ｒ２Ｍ−Ｎ ；
（ｂ）
８３Ｍ−ＮＲ，；
（Ｃ）
８２Ｍ−ＮＲ２；
（ｄ）
８２Ｎ−ＮＲ２；
本発明者等が上記実施例方法により行なったＧａＮ成長
の一連の結果について示す。第１図は成長速度の成長温
度依存性である。成長速度はある温度（ここでは臨界温
度と呼ぶ）を越えるとほぼ一定となるが、臨界温度以下
では急速に減少する。(a) R2M-N; (b) 83M-NR; (C) 82M-NR2; (d) 82N-NR2; A series of results of GaN growth carried out by the present inventors using the method of the above embodiment will be shown. FIG. 1 shows the dependence of growth rate on growth temperature. The growth rate remains approximately constant above a certain temperature (here referred to as the critical temperature), but rapidly decreases below the critical temperature.
（ＣＨ３）、ＧａＮ、を原料として使用した場合の臨界
温度は５００℃であり、ＮＨ３を用いたときの７００°
Ｃと比べ２００℃も低く、低温成長が可能になる。Ｇａ
Ｎの低温成長が可能となると、ＧａＡｓ等のパッシベー
ション膜としての用途も開けることになる。(CH3), GaN, is used as a raw material, the critical temperature is 500°C, and when NH3 is used, the critical temperature is 700°C.
It is 200°C lower than C, making low-temperature growth possible. Ga
If low-temperature growth of N becomes possible, it will also be used as a passivation film for materials such as GaAs.
（ＣＨ３）２ＧａＮ３を原料として使用した場合にはキ
ャリアガスである水素ガスと（ＣＨ，）、ＧａＮ３を流
すだけでＧａＮの成長を行うことができるが、ＮＨ，を
同時に流すことによりＶ／ＩＩＩ比の制御を行うことが
可能となる。第２図にキャリア濃度のＶ／ｍ比依存性を
示す。原料としてＧａ（ＣＨ３）３とＮＨ３を用いた場
合（第２図のＡ）、Ｇａ （ＣＨ，）、とＲ２Ｎ２ （
ＣＨ３）２を用いた場合（第２図のＢ）、（ＣＨ，）ｚ
ＧａＮ （ＣＨ，）ｚとＮＨ３を用いた場合（第２図
のＣ）、（ＣＨ３）２ にａＮ３とＮＨ３を用いた場合
（第２図のＤ）について示した。図によって明らかなよ
うに、ｃａ （ＣＨ３）３とＮＨ，を用いた上記Ａの場
合、ｌＱｌ’ＩＣ，−Ｊ以下のキャリア濃度の結晶を得
るためにはＶ／ｍ比を１００００以上に設定せねばなら
ず実用的な素子の作成には不向きである。■族の利用効
率は、ＮＨ３から８２ Ｎ２ （ＣＨ３）２、（ＣＨ３
）２ ＧａＮ （ＣＨ，）２（ＣＦ＋３ ）２ ＧａＮ
、の順に向上するが、特に（ＣＨ，）ｚ ＧａＮ、を用
いた場合、Ｖ／ｍ比が同じならばＮＨ３のみを用いた場
合に比較してｌ／１００以下のキャリア濃度の結晶を得
ることができる。このことは、単にＮの取り込まれが良
くなりＮの空孔が少なく良好な結晶が得られるだけでな
く、ＮＨ３の使用景が飛躍的に少くなることからＮＯ，
からの不純物の取り込まれが減少すること、 Ｇａ （
Ｃ１３）３を使用する必要が４いことから炭素の取り込
まれが軽減するなどの効果も同時に反映している。When (CH3)2GaN3 is used as a raw material, GaN can be grown by simply flowing carrier gas hydrogen gas, (CH,), and GaN3, but by simultaneously flowing NH, the V/III ratio is It becomes possible to control the FIG. 2 shows the dependence of the carrier concentration on the V/m ratio. When Ga(CH3)3 and NH3 are used as raw materials (A in Figure 2), Ga (CH,) and R2N2 (
When using CH3)2 (B in Figure 2), (CH,)z
The case where GaN (CH,)z and NH3 are used (C in Fig. 2) and the case where aN3 and NH3 are used in (CH3)2 (D in Fig. 2) are shown. As is clear from the figure, in the case of A above using ca (CH3)3 and NH, the V/m ratio must be set to 10,000 or more in order to obtain a crystal with a carrier concentration of less than lQl'IC,-J. It is unsuitable for producing practical devices. ■The utilization efficiency of the group is NH3 to 82 N2 (CH3)2, (CH3
)2 GaN (CH,)2(CF+3)2 GaN
However, especially when (CH,)zGaN is used, it is possible to obtain a crystal with a carrier concentration of 1/100 or less compared to when only NH3 is used if the V/m ratio is the same. I can do it. This not only improves the uptake of N and provides good crystals with fewer N vacancies, but also dramatically reduces the use of NH3, which results in NO,
The incorporation of impurities from Ga (
This also reflects the effect of reducing carbon uptake since there is no need to use C13)3.
以上より、本発明による方法が高品質のＧａＮＪ＠の成
長において十分有効であることが実証され力なお、本発
明は上述した実施例方法に限定さするものではない−（
ＣＨ３）２ＡＩＮ３を用いた場合にはＡとＮの結合が強
いため、より効果的にＮが結晶時に取り込まれる。その
他あらゆるナイトライド層の製造方法において特許請求
の範囲を逸脱しない範囲で種々変形して実施できる。From the above, it has been demonstrated that the method according to the present invention is sufficiently effective in growing high-quality GaNJ@. Note that the present invention is not limited to the method of the embodiments described above.
When CH3)2AIN3 is used, the bond between A and N is strong, so N is incorporated more effectively during crystallization. Any other method for producing a nitride layer may be modified in various ways without departing from the scope of the claims.
以上詳述したように本発明によれば、ナイトライド結晶
中への窒素の取り込まれを増大することが可能であり、
高品質の短波長発光素子が得られ、産業上の要求に十分
応えられる。As detailed above, according to the present invention, it is possible to increase the incorporation of nitrogen into the nitride crystal,
A high quality short wavelength light emitting device can be obtained and can fully meet industrial requirements.
第１図はＧａＮ成長の成長速度と成長温度依存性の相関
を示す線図、第２図はＧａＮ成長におけるキャリア濃度
のＶ／ｍ比依存性を説明す°るための線図、第３図は有
機金属気相成長に用いた気相成長装置の要部を示す断面
図である。
代理人 弁理士 大 胡 典 夫
（０Ｃ）
第
凶
１１−、田烏看
１３ ガ゛ス＃ＦＩＡＪ口
＋５： ＧａＡｓ 影に
１７：脅Ｉ記対
１２； ゴス淳入口
１４ サ【ブタ
１６： ＆１ｆｆｉ；皮：＋１＋Ｉ／
第
３図Fig. 1 is a diagram showing the correlation between the growth rate and growth temperature dependence of GaN growth, Fig. 2 is a diagram explaining the dependence of carrier concentration on the V/m ratio in GaN growth, and Fig. 3 1 is a cross-sectional view showing the main parts of a vapor phase growth apparatus used for organometallic vapor phase growth. Agent Patent Attorney Norio Ogo (0C) No. 11-, Tagarasu Kan 13 Gaas #FIAJ mouth +5: GaAs Shadow 17: Intimidation I vs. 12; :+1+I/ Figure 3
Claims (4)
において、水素−窒素結合を持たない窒素原子を一分子
中に少なくとも一個有する有機金属化合物を原料に用い
ることを特徴とするIII−Ｖ族化合物半導体の有機金属
成長法。(1) A method for manufacturing a III-V group compound semiconductor layer containing nitrogen, characterized in that an organometallic compound having at least one nitrogen atom in one molecule that does not have a hydrogen-nitrogen bond is used as a raw material. Organometallic growth method for group compound semiconductors.
において、III族−窒素結合を有する有機金属化合物を
原料に用いることを特徴とするIII−Ｖ族化合物半導体
の有機金属成長法。(2) A method for producing an III-V group compound semiconductor layer containing nitrogen, characterized in that an organometallic compound having a group III-nitrogen bond is used as a raw material.
において、アジド基を有する有機金属化合物を原料に用
いることを特徴とするIII−Ｖ族化合物半導体の有機金
属成長法。(3) A method for producing an III-V group compound semiconductor layer containing nitrogen, characterized in that an organometallic compound having an azide group is used as a raw material.
基、Ｍ；III族元素）であることを特徴とする請求項１
ないし３のいずれかに記載のIII−Ｖ族化合物半導体の
有機金属成長法。(4) Claim 1, wherein the organometallic compound is R_2MN_3 (R: alkyl group, M: group III element)
4. The organometallic growth method of a III-V compound semiconductor according to any one of items 3 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25833090A JP2965653B2 (en) | 1990-09-27 | 1990-09-27 | Organic metal growth method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25833090A JP2965653B2 (en) | 1990-09-27 | 1990-09-27 | Organic metal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04139097A true JPH04139097A (en) | 1992-05-13 |
| JP2965653B2 JP2965653B2 (en) | 1999-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25833090A Expired - Fee Related JP2965653B2 (en) | 1990-09-27 | 1990-09-27 | Organic metal growth method |
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| Country | Link |
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| JP (1) | JP2965653B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11204885A (en) * | 1998-01-08 | 1999-07-30 | Sony Corp | Growing method of nitride iii-v group compound semiconductor layer and manufacture of semiconductor layer |
| US6017774A (en) * | 1995-12-24 | 2000-01-25 | Sharp Kabushiki Kaisha | Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor |
| JP2008135768A (en) * | 2007-12-28 | 2008-06-12 | Sony Corp | Growing method of nitride-based group iii-v compound semiconductor layer and manufacturing method of semiconductor device |
-
1990
- 1990-09-27 JP JP25833090A patent/JP2965653B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6017774A (en) * | 1995-12-24 | 2000-01-25 | Sharp Kabushiki Kaisha | Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor |
| JPH11204885A (en) * | 1998-01-08 | 1999-07-30 | Sony Corp | Growing method of nitride iii-v group compound semiconductor layer and manufacture of semiconductor layer |
| JP2008135768A (en) * | 2007-12-28 | 2008-06-12 | Sony Corp | Growing method of nitride-based group iii-v compound semiconductor layer and manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2965653B2 (en) | 1999-10-18 |
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