JPH04134843A - Inspection method of wafer carrier - Google Patents
Inspection method of wafer carrierInfo
- Publication number
- JPH04134843A JPH04134843A JP25793090A JP25793090A JPH04134843A JP H04134843 A JPH04134843 A JP H04134843A JP 25793090 A JP25793090 A JP 25793090A JP 25793090 A JP25793090 A JP 25793090A JP H04134843 A JPH04134843 A JP H04134843A
- Authority
- JP
- Japan
- Prior art keywords
- wafer carrier
- wafer
- fluorine
- chemical
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000007689 inspection Methods 0.000 title claims description 5
- 239000000126 substance Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 abstract description 14
- 239000011737 fluorine Substances 0.000 abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 3
- 230000006866 deterioration Effects 0.000 abstract 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 47
- 239000012488 sample solution Substances 0.000 description 12
- -1 perfluoroalkyl vinyl ether Chemical compound 0.000 description 9
- 239000000969 carrier Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ウェーハキャリア、特にウェーハ処理等に使用する弗素
樹脂製ウェーハキャリアの検査方法に関し、
ウェーハキャリアに吸収された薬品がそのウェーハキャ
リアに収容中のウェーハ表面を変質させることによる歩
留り低下を防止することを目的とし、
つ二一ハキャリアを洗浄液中で超音波洗浄し、該洗浄液
中に溶出した特定物質の濃度を測定し、該測定結果に基
づいて該ウェーハキャリアの使用可否を判定するように
構成する。[Detailed Description of the Invention] [Summary] Regarding an inspection method for a wafer carrier, particularly a fluororesin wafer carrier used for wafer processing, etc., chemicals absorbed into the wafer carrier alter the surface of the wafer housed in the wafer carrier. In order to prevent yield loss caused by is configured to determine whether or not it can be used.
本発明は、ウェーハキャリア、特にウェーハ処理等に使
用する弗素樹脂製ウェーハキャリアの検査方法に関する
。The present invention relates to a method for inspecting wafer carriers, particularly fluororesin wafer carriers used for wafer processing and the like.
半導体装置の製造工程にあっては、ウェーハの洗浄、乾
燥、搬送、保管等の目的でウェーハキャリアが大量に使
用されている。その形状や材質はその使用目的に応じて
異なっている。近年、ウェーハ処理工程の自動化が進み
、ウェーハの移し換え頻度を減らすために、多目的の使
用が可能なつ工−ハキャリアが望まれている。この要求
に応えることが可能な材料として、弗素樹脂、特にＰＦ
Ａと呼ばれる種類のものがある。このＰＦＡはテトラフ
ルオロエチレンとパーフルオロアルキルビニルエーテル
との共重合体であり、耐薬品性、耐熱性が優れており、
しかも成形性も悪くない。従って、薬液洗浄とその後の
加熱乾燥を含む多目的ウェーハキャリアとして広く使用
されるようになって来た。In the manufacturing process of semiconductor devices, wafer carriers are used in large quantities for purposes such as cleaning, drying, transporting, and storing wafers. Its shape and material vary depending on its purpose. In recent years, automation of wafer processing processes has progressed, and in order to reduce the frequency of wafer transfer, a tool carrier that can be used for multiple purposes is desired. Fluororesin, especially PF, is a material that can meet this demand.
There is a type called A. This PFA is a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, and has excellent chemical resistance and heat resistance.
Moreover, the moldability is not bad. Therefore, it has come to be widely used as a multipurpose wafer carrier that includes chemical cleaning and subsequent heat drying.
ところがこの樹脂には他の樹脂と同様、薬液の浸透性が
ある。それは僅かなものであるが蓄積性があるため、浸
透した薬液が後でガスとして放出され、収容しているウ
ェーハの表面を変質させることがあり、その対策が必要
である。However, like other resins, this resin is permeable to chemical solutions. Although it is a small amount, it has the tendency to accumulate, so the permeated chemical solution may be released later as a gas and alter the surface of the wafer contained therein, so countermeasures are required.
ＰＦＡ製のウェーハキャリアには上述のように薬液の浸
透性があり、しかも繰り返し薬液に曝されているうちに
吸収量が増加し、やがて収容しているウェーハの表面を
変質させるようになる。これを防ぐために、従来はＰＦ
Ａ製のウェーハキャリアを、経験的に定めた周期（例え
ば１週間）で定期的に純水洗浄とベーキング（例えば２
００°Ｃ１３０分）を行っていた。As mentioned above, PFA wafer carriers are permeable to chemical liquids, and as they are repeatedly exposed to chemical liquids, the amount of absorption increases, and eventually the surface of the wafers contained therein begins to change in quality. To prevent this, conventionally PF
The wafer carrier manufactured by A is periodically cleaned with pure water and baked (for example, 2 times) at an empirically determined period (for example, 1 week).
00°C for 130 minutes).
ところが、ウェーハの薬液洗浄に使用したウェーハキャ
リアをこのような方法で水洗、ベーキングを実施しても
、充分に吸収薬液が除去されているとは限らず、その後
の使用でウエーノ凡の表面を変質させることがあり、特
に微細構造の素子を有するウェーハの処理工程では歩留
りを低下させる、という問題があった。However, even if the wafer carrier used for chemical cleaning of wafers is washed with water and baked in this way, the absorbed chemical solution is not necessarily removed sufficiently, and the surface of the wafer may be altered during subsequent use. This poses a problem in that the yield rate is lowered, particularly in the process of processing wafers having finely structured elements.
本発明は、このような問題を解決して、ウニ・−ハキャ
リアに吸収された薬品がそのウェーハキャリアに収容中
のウェーハ表面を変質させることによる歩留り低下を防
止することを目的とする。It is an object of the present invention to solve such problems and to prevent a decrease in yield due to chemicals absorbed in the wafer carrier altering the surface of the wafer housed in the wafer carrier.
この目的は、本発明によれば、ウェーハキャリアを洗浄
液中で超音波洗浄し、該洗浄液中に溶出した特定物質の
濃度を測定し、該測定結果に基づいて該ウェーハキャリ
アの使用可否を判定するすることを特徴とするウェーハ
キャリアの検査方法とすることで、達成される。According to the present invention, this purpose is to ultrasonically clean a wafer carrier in a cleaning solution, measure the concentration of a specific substance eluted in the cleaning solution, and determine whether or not the wafer carrier can be used based on the measurement results. This can be achieved by providing a wafer carrier inspection method characterized by the following.
シリコン・ウェーハの薬液洗浄には弗酸等、弗素を含む
薬液を使用することが多く、又、ウェーハ表面が弗素の
影響を受は易い状態にあることが多いから、使用中のウ
ェーハキャリアに弗素がどの程度吸収されているかを知
ることにより、そのウェーハキャリアの使用継続の可否
を判定することは有効である。Chemical solutions containing fluorine, such as hydrofluoric acid, are often used to chemically clean silicon wafers, and since the wafer surface is often susceptible to the effects of fluorine, do not use fluorine in the wafer carrier during use. It is effective to determine whether or not the wafer carrier can be continued to be used by knowing how much of the wafer carrier has been absorbed.
一定条件でウェーハキャリアから純水に溶出する弗素イ
オンの濃度を測定することにより、つ工−ハキャリアに
弗素がどの程度吸収されているがを知ることが出来る。By measuring the concentration of fluorine ions eluted from the wafer carrier into pure water under certain conditions, it is possible to know how much fluorine is absorbed by the wafer carrier.
弗素イオンの濃度は、ランタン・アリザリンコンブレク
ラン吸光光度法により測定する。即ち、試料液にアルフ
ッソン試薬を加え、これに波長６２Ｏｎｍ付近の光を照
射して試料液の吸光度を測定する。これは、この試薬に
含まれるランタンとアリサリンコンブレクソンとの錯体
が試料液中の弗素イオンと反応して生ずる青色の複合錯
体の量に応じて、この試料液の６２０ ｎｍ付近での吸
光度が変化すること利用したものである。The concentration of fluorine ions is measured by lanthanum-alizarin combination spectrophotometry. That is, Alfusson's reagent is added to the sample solution, and the sample solution is irradiated with light having a wavelength of around 62 Onm to measure the absorbance of the sample solution. This is because the absorbance of this sample solution at around 620 nm depends on the amount of a blue complex produced when the complex of lanthanum and alisarin combination contained in this reagent reacts with fluorine ions in the sample solution. It is something that takes advantage of change.
本発明に基づくウェーハキャリアの検査方法の実施例を
説明する。先ず被検査物のウェーハキャリアを超音波洗
浄する。洗浄液には純水を用いる。An embodiment of the wafer carrier inspection method based on the present invention will be described. First, a wafer carrier to be inspected is ultrasonically cleaned. Use pure water as the cleaning solution.
液量、超音波の周波数、洗浄時間等の洗浄条件は一定と
する。次に洗浄液を一定量採取してこれを試料液とする
。この試料液に一定量のアルフッソン試薬を滴下する。Cleaning conditions such as liquid volume, ultrasonic frequency, and cleaning time are kept constant. Next, a certain amount of the cleaning solution is collected and used as a sample solution. A certain amount of Alfusson's reagent is dropped into this sample solution.
試料液に弗素イオンが溶出している場合には、試料液は
青紫色を呈する。その後この試料液の一部を所定の小容
器に入れ、吸光光度計でこの試料液の６２０ ｎｍにお
ける吸光度を測定する。その測定結果によりそのウェー
ハキャリアの使用継続の可否を判定する。When fluorine ions are eluted into the sample solution, the sample solution exhibits a blue-purple color. Thereafter, a portion of this sample solution is placed in a predetermined small container, and the absorbance of this sample solution at 620 nm is measured using an absorption photometer. Based on the measurement results, it is determined whether the wafer carrier can continue to be used.
以上の方法により本発明者が実験的にウェーハキャリア
から溶出させた弗素イオン濃度を測定した結果を記す。The results of experimentally measuring the concentration of fluorine ions eluted from a wafer carrier by the inventor using the above method will be described.
実験は次のように行った。先ず未使用のＰＦＡ製ウェー
ハキャリア（５インチ・ウェーハ用）２個を準備し、こ
れらをそれぞれ２回純水洗浄しくいずれも室温、１０分
）、次に加熱乾燥した（１１０°Ｃ，１５分）。次にこ
れらを１０％弗化水素酸（液温は２０〜２５°Ｃ）に浸
漬した。浸漬時間は第一のウェーハキャリア（以下、■
と記す）が４週間、第二のウェーハキャリア（以下、■
と記す）が６週間である。浸漬期間終了後、これらを純
水洗浄しく室温、１０分）、その後これらをそれぞれ２
Ｉ！の純水中で超音波洗浄した（４１ ＫＨｚ、 ２
時間）。洗浄後の純水をそれぞれ試料液として採取し、
上述の方法で弗素イオン濃度を測定した結果を第１図に
示す。同図から明らかなように、いずれの場合にも弗素
イオンが検出されており、且つ■と■に濃度の差が出て
いる。The experiment was conducted as follows. First, two unused PFA wafer carriers (for 5-inch wafers) were prepared, each washed twice with pure water (room temperature, 10 minutes), and then heated and dried (110°C, 15 minutes). ). Next, these were immersed in 10% hydrofluoric acid (liquid temperature: 20-25°C). The immersion time is determined by the first wafer carrier (hereinafter referred to as ■
) was transferred to the second wafer carrier (hereinafter referred to as ■) for four weeks.
) is 6 weeks. After the immersion period, they were washed with pure water at room temperature for 10 minutes), and then each was washed with water for 2 minutes.
I! Ultrasonic cleaning in pure water (41 KHz, 2
time). Collect pure water after washing as a sample solution,
The results of measuring the fluorine ion concentration using the method described above are shown in FIG. As is clear from the figure, fluorine ions are detected in all cases, and there is a difference in concentration between (1) and (2).
本発明は以上の実施例に限定されることなく、更に種々
変形して実施出来る。The present invention is not limited to the above embodiments, but can be implemented with various modifications.
よる歩留り低下を防止するウェーハキャリアの検査方法
を提供することが出来る。It is possible to provide a method for inspecting a wafer carrier that prevents a decrease in yield due to the above.
第１図はウェーハキャリアから溶出した弗素イオン濃度
の測定例を示すグラフ、である。
図中、■は１０％弗化水素酸への浸漬時間４週間のウェ
ーハキャリアのデータ、
■は１０％弗化水素酸への浸漬時間６週間のウェーハキ
ャリアのデータ、である。
〔発明の効果〕FIG. 1 is a graph showing an example of measuring the concentration of fluorine ions eluted from a wafer carrier. In the figure, ■ is data of a wafer carrier immersed in 10% hydrofluoric acid for 4 weeks, and ■ is data of a wafer carrier immersed in 10% hydrofluoric acid for 6 weeks. 〔Effect of the invention〕
Claims (1)
液中に溶出した特定物質の濃度を測定し、該測定結果に
基づいて該ウェーハキャリアの使用可否を判定すること
を特徴とするウェーハキャリアの検査方法。A wafer carrier inspection method comprising: ultrasonically cleaning a wafer carrier in a cleaning solution, measuring the concentration of a specific substance eluted into the cleaning solution, and determining whether or not the wafer carrier can be used based on the measurement results. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25793090A JPH04134843A (en) | 1990-09-27 | 1990-09-27 | Inspection method of wafer carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25793090A JPH04134843A (en) | 1990-09-27 | 1990-09-27 | Inspection method of wafer carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04134843A true JPH04134843A (en) | 1992-05-08 |
Family
ID=17313175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25793090A Pending JPH04134843A (en) | 1990-09-27 | 1990-09-27 | Inspection method of wafer carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04134843A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5896874A (en) * | 1996-07-02 | 1999-04-27 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
| WO2014032143A1 (en) * | 2012-08-27 | 2014-03-06 | União Brasileira De Educação E Assistência - Mantenedora Da Pucrs | Surface cleaning method with isotropic etching for textured silicon wafers |
-
1990
- 1990-09-27 JP JP25793090A patent/JPH04134843A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5896874A (en) * | 1996-07-02 | 1999-04-27 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
| WO2014032143A1 (en) * | 2012-08-27 | 2014-03-06 | União Brasileira De Educação E Assistência - Mantenedora Da Pucrs | Surface cleaning method with isotropic etching for textured silicon wafers |
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