JPH04132693A - Heat treatment of neutron-irradiated silicon single crystal - Google Patents
Heat treatment of neutron-irradiated silicon single crystalInfo
- Publication number
- JPH04132693A JPH04132693A JP25320790A JP25320790A JPH04132693A JP H04132693 A JPH04132693 A JP H04132693A JP 25320790 A JP25320790 A JP 25320790A JP 25320790 A JP25320790 A JP 25320790A JP H04132693 A JPH04132693 A JP H04132693A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- neutron
- silicon single
- single crystal
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 238000010438 heat treatment Methods 0.000 title description 56
- 230000007547 defect Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 7
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 7
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、中性子照射ドープを行なったシリコン単結晶
に生起する結晶欠陥を除去し、抵抗率を修復するように
した中性子照射シリコン単結晶の熱処理方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to a neutron-irradiated silicon single crystal that is capable of removing crystal defects occurring in the neutron-irradiated silicon single crystal and restoring its resistivity. It relates to a heat treatment method.
中性子照射による不純物ドープは半導体シリコン単結晶
内に均一な不純物分布、即ち抵抗率分布を得るために利
用されている。しかし、同時にシリコン単結晶において
は中性子照射による結晶欠陥が発生しており中性子を照
射したままでは本来のシリコン単結晶の性質（電気的特
性その他の物理的特性）を示さない。特に軽水炉を用い
た場合には、高速中性子が多くなるためにシリコン単結
晶の結晶欠陥が増大するものである。Impurity doping by neutron irradiation is used to obtain a uniform impurity distribution, that is, a resistivity distribution, within a semiconductor silicon single crystal. However, at the same time, crystal defects occur in the silicon single crystal due to neutron irradiation, and the silicon single crystal does not exhibit its original properties (electrical properties and other physical properties) as long as it remains irradiated with neutrons. In particular, when a light water reactor is used, the number of fast neutrons increases, which increases the number of crystal defects in silicon single crystals.
中性子照射ドープ後に熱処理を行なう技術は知られてい
る（特公昭５３−２８７４１号、特開昭５１１０５９６
５号、特公昭５Ｂ−／１８１２号等）が、効果的な熱処
理によってシリコン単結晶に生じた結晶欠陥を除去し、
抵抗率を回復する技術はいまだ知られていない。The technique of heat treatment after neutron irradiation doping is known (Japanese Patent Publication No. 53-28741, Japanese Patent Application Laid-open No. 5110596).
No. 5, Special Publication No. 5B-/1812, etc.) removed crystal defects that occurred in silicon single crystals by effective heat treatment,
A technique for restoring resistivity is not yet known.
本発明は上記した従来技術に鑑みて発明されたもので、
シリコン単結晶に発生した中性子照射による結晶欠陥を
除去し、抵抗率を回復するようにした方法を提供するこ
とを目的とする。The present invention was invented in view of the above-mentioned prior art,
An object of the present invention is to provide a method for removing crystal defects caused by neutron irradiation in a silicon single crystal and restoring resistivity.
上記課題を解決するために、本発明の中性子照射シリコ
ン単結晶の熱処理方法においては、中性子照射ドープを
行なったシリコンリを結晶を、９５０〜Ｉ ２００ ’
Ｃの温度範囲で所定時間熱処理するようにしたものであ
る。In order to solve the above problems, in the heat treatment method of neutron irradiated silicon single crystal of the present invention, a silicon crystal doped with neutron irradiation is heated to a temperature of 950 to I 200'.
The heat treatment is performed at a temperature range of C for a predetermined period of time.
」二足の温度範囲であれば、所定時間の熱処理によって
結晶内部の結晶欠陥が除去され、抵抗率が回復するもの
であり、実際の操業に当たっては、熱処理温度に対応す
る処理時間（抵抗率が回復し結晶欠陥が修復するまでの
時間）を予め設定しておけばよい。If the temperature range is within the same range as that of ``20'', crystal defects inside the crystal will be removed by heat treatment for a predetermined time and resistivity will be restored.In actual operation, the treatment time corresponding to the heat treatment temperature (resistivity The time required for recovery and crystal defects to be repaired may be set in advance.
処理温度が９５０℃未満では、結晶欠陥が除去できず抵
抗率の回復が不可能である。１２００℃を越えた熱処理
はシリコンウェーハに悪影ｇを及ぼすので好ましくない
。If the treatment temperature is less than 950° C., crystal defects cannot be removed and resistivity cannot be restored. Heat treatment at a temperature exceeding 1200° C. is not preferable because it has a negative effect on the silicon wafer.
この所定時間を例示すれば、１２００ ’Ｃに対しては
２０分以上、１０００ ’Ｃに対しては１２０分以上、
９５０ ’Ｃに対しては３６０分以上である。For example, the predetermined time is 20 minutes or more for 1200'C, 120 minutes or more for 1000'C,
For 950'C it is more than 360 minutes.
以下に実施例を挙げて本発明を説明する。 The present invention will be explained below with reference to Examples.
中性子照射
次の条件でシリコン単結晶（２５０ｍｍ長のブロック）
に対して軽水炉及び重水炉において中性子照射を行なっ
た。Neutron irradiation Silicon single crystal (250 mm long block) under the following conditions:
neutron irradiation was carried out in light water reactors and heavy water reactors.
使用した結晶
■成長方法：浮遊（ＩＦ融液法（ＦＺ法）■結晶直径：
６０ｍｍφ
■成長方位：＜Ｉｌｌ＞
■導伝型：ｎ
照射条件（軽水炉）
■目標抵抗値：３０〜４０Ω・ｃｍ
■熱中性子束（平均値）： ２Ｘ１０”ｎ／ｃ＋ｆｌ／
ｓ■高速中性子束（平均値）
： ２ 、 ５ Ｘ ｌ Ｏ”ｎ ／ｃｔａ／ ｓ■照
射時間：２時間１５分
照射条件（重水炉）
■目標抵抗値：３０〜４０Ω・ｃｍ
■熱中性子束（平均値） ： ２ Ｘ １０ ”ｎ
／ｃｆ／ ｓ■高速中性子束（平均値）
：５Ｘ１０ 貫’ （１／ ｃｔＲ／ ｓ■照射時間
＝２時間１５分
熱処理実験１
上記したごとく、重水炉及び軽水炉で中性子照射したシ
リコン単結晶ブロックからそれぞれウェーハを切出した
。軽水炉中性子照射シリコンウェーハ及び重水炉中性子
照射シリコンウェーハのそれぞれに対して熱処理実験を
行なった。これらのウェーハに対して処理温度を７５０
’Ｃ，１０００’Ｃ，１２００℃の３条件、各温度につ
いて処理時間を３０分、６０分、１２０分、２４０分、
３６０分の５条件として熱処理を行なった。この熱処理
を行なったシリコンウェーハの抵抗率を四探針法によっ
て測定し、その結果を第１図及び第２図に示した。Crystal used ■Growth method: Floating (IF melt method (FZ method) ■Crystal diameter:
60mmφ ■Growth direction: <Ill> ■Conduction type: n Irradiation conditions (light water reactor) ■Target resistance value: 30-40Ω・cm ■Thermal neutron flux (average value): 2X10”n/c+fl/
s ■ Fast neutron flux (average value): 2, 5 X l O”n /cta/ s ■ Irradiation time: 2 hours 15 minutes Irradiation conditions (heavy water reactor) ■ Target resistance value: 30 to 40 Ω・cm ■ Thermal neutron flux (Average value): 2 x 10”n
/cf/s ■Fast neutron flux (average value): 5 x 10 x 1/ctR/s ■Irradiation time = 2 hours 15 minutes Heat treatment experiment 1 As described above, from a silicon single crystal block irradiated with neutrons in a heavy water reactor and a light water reactor. Each wafer was cut out. Heat treatment experiments were conducted on each of the light water reactor neutron irradiated silicon wafer and the heavy water reactor neutron irradiated silicon wafer.
Three conditions: 'C, 1000'C, 1200℃, processing time for each temperature: 30 minutes, 60 minutes, 120 minutes, 240 minutes.
Heat treatment was performed under conditions of 5/360. The resistivity of the silicon wafer subjected to this heat treatment was measured by the four-point probe method, and the results are shown in FIGS. 1 and 2.
熱処理実験２
熱処理実験Ｊの結果を確認するためさらに２段熱処理を
行なった。Heat Treatment Experiment 2 In order to confirm the results of heat treatment experiment J, two more stages of heat treatment were performed.
一段目熱処理は７５０℃及び１２００℃で所定時間行い
、二段目熱処理は１０００ ’Ｃで８分行なった。この
熱処理を行なったシリコンウェーハの抵抗率を四探針法
によって測定し、その結果を第３図及び第４図に示した
。また、軽水炉中性子照射シリコンウェーハ及び重水炉
中性子照射シリコンウェーハのそれぞれに対して中性子
照射によるダメージの度合及び種類をＤＬＴＳ （ＤＥ
ＥＰＬＥＶＥＬ ＴＲＡＮＳＩＥＮＴ ５ＰＥＣＴ
ＲＯ３ＣＯＰＹ）法によって調べ、その結果を第５図、
第６図及び第７図に示した。The first heat treatment was carried out at 750°C and 1200°C for predetermined times, and the second heat treatment was carried out at 1000'C for 8 minutes. The resistivity of the silicon wafer subjected to this heat treatment was measured by the four-point probe method, and the results are shown in FIGS. 3 and 4. In addition, the degree and type of damage caused by neutron irradiation for light water reactor neutron irradiated silicon wafers and heavy water reactor neutron irradiated silicon wafers was calculated using DLTS (DE
EPLEVEL TRANSIENT 5PECT
The results are shown in Figure 5.
It is shown in FIGS. 6 and 7.
上記した実験１及び２の結果から次のことを確認した。From the results of Experiments 1 and 2 described above, the following was confirmed.
１）軽水炉中性子照射ウェーハの抵抗率は１２００℃の
熱処理温度では処理時間（３０〜３６０分）の変化に対
して一定であり、結晶欠陥が修復され安定な実用的抵抗
率が得られたと判断される（第１図）。第５図における
１００Ｋ付近のＤＬＴＳ波形ピークはシリコン単結晶固
有のもので、その高温側の隣接ピークは熱処理によって
消滅する中性子照射起因の結晶欠陥に対応するものとみ
ることができる。また、二段熱処理を行なった場合にも
、同様に抵抗率は安定しており、結晶欠陥は除去された
と判断される（第４図）。1) The resistivity of light water reactor neutron irradiated wafers remained constant with respect to changes in treatment time (30 to 360 minutes) at a heat treatment temperature of 1200°C, indicating that crystal defects were repaired and a stable practical resistivity was obtained. (Figure 1). The DLTS waveform peak near 100K in FIG. 5 is unique to a silicon single crystal, and the adjacent peak on the high temperature side can be considered to correspond to crystal defects caused by neutron irradiation that are eliminated by heat treatment. Further, even when the two-stage heat treatment was performed, the resistivity was similarly stable, and it was judged that the crystal defects were removed (FIG. 4).
１０００℃の場合には、１２０分未満の熱処理では抵抗
率は回復しζいないと判断される（第１図）。In the case of 1000° C., it is determined that resistivity does not recover with heat treatment for less than 120 minutes (FIG. 1).
７５０℃の熱処理温度の場合にも、１２００℃の場合と
同様に、抵抗率は処理時間の変化に対してほぼ一定であ
り、結晶欠陥も回復しているように見える（第１図）が
、さらに１０００℃８分の２段目熱処理を行なうと、抵
抗率は大きく変動低下してしまい、結晶内部には欠陥が
残留していることが分かった（第３図）。Even at a heat treatment temperature of 750°C, as in the case of 1200°C, the resistivity remains almost constant with respect to changes in treatment time, and crystal defects also appear to be recovered (Fig. 1). When a second heat treatment was further performed at 1000° C. for 8 minutes, the resistivity significantly decreased and it was found that defects remained inside the crystal (FIG. 3).
１０００℃８分の熱処理は半導体素子の製造工程の熱処
理を模擬したものである。The heat treatment at 1000° C. for 8 minutes simulates the heat treatment in the manufacturing process of semiconductor elements.
２）二段熱処理における軽水炉中性子照射ウェーハの挙
動をさらに正確に知るために行なったＤＬＴＳ法による
測定結果は第５図に示されている。2) The results of measurement using the DLTS method, which was carried out to more accurately understand the behavior of the light water reactor neutron irradiated wafer during the two-stage heat treatment, are shown in FIG.
第４図に示した抵抗率の変化と同様に、１段目に１２０
０℃の熱処理のみを行なった場合及びさらに２段目に１
０００℃の熱処理を行なった場合のいずれの場合にもＤ
Ｌ ＴＳの信号波形は安定しており、結晶欠陥は除去
されていると考えられる。Similar to the change in resistivity shown in Figure 4, 120
When heat treatment is performed only at 0°C, and in addition, 1
D in any case when heat treatment was performed at 000℃
The LTS signal waveform is stable, and it is considered that crystal defects have been removed.
また、一方１段目に７５０℃の熱処理のみを行なった場
合及びさらに２段目に１０００℃の熱処理を行なった場
合のいずれの場合にもＤ Ｌ Ｔ Ｓの信号波形には異
常ピークが見られ、結晶内部には欠陥が在留しているこ
とが窺える。In addition, abnormal peaks were observed in the signal waveform of D L T S both when heat treatment was performed at 750°C on the first stage and when heat treatment at 1000°C was further performed on the second stage. , it can be seen that defects reside inside the crystal.
３）重水炉中性子照射ウェーハの熱処理はいずれの熱処
理温度（７５０°ｃ、１ｏｏｏ℃，１２００”Ｃ）であ
っても処理時間（３０〜３６０分）の変化に対して一定
であり、−見すると全ての熱処理の場合に結晶欠陥が除
去されているように見える（第２図）。更に、二段熱処
理を行なったものでも、すべて抵抗率は安定しており、
結晶欠陥は回復しているように見える（第３図及び第４
図）。3) The heat treatment of heavy water reactor neutron irradiated wafers is constant regardless of the change in treatment time (30 to 360 minutes) regardless of the heat treatment temperature (750°C, 1ooo°C, 1200"C). Crystal defects appear to have been removed in all cases of heat treatment (Figure 2).Furthermore, even in the case of two-step heat treatment, the resistivity remains stable in all cases.
The crystal defects appear to have recovered (Figures 3 and 4).
figure).
４）二段熱処理における重水炉中性子照射ウェーへの結
晶欠陥の挙動をさらに正確に知るために行なったＤＬＴ
Ｓ法による測定結果は第６図に示されている。4) DLT performed to more accurately understand the behavior of crystal defects on the wafer irradiated with heavy water reactor neutrons during two-stage heat treatment
The measurement results by the S method are shown in FIG.
第４図に示した抵抗率の変化と同様に、１段目に１２０
０℃の熱処理のみを行なった場合及びさらに２段目に１
０００℃の熱処理を行なった場合のいずれの場合にもＩ
） Ｌ Ｔ Ｓのスペクトルは安定しており、結晶の欠
陥は除去されていると考えられる。Similar to the change in resistivity shown in Figure 4, 120
When heat treatment is performed only at 0°C, and in addition, 1
In all cases when heat treatment is performed at 000℃, I
) The spectrum of LTS is stable, and it is considered that crystal defects have been removed.
また、１段目に７５０ ’Ｃの熱処理のみを行なった場
合及びさらに２段目に１０００℃の熱処理を行なった場
合のいずれの場合にもＤＬＴＳの信号波形には異常ピー
クが存在し、結晶内部には欠陥が残留していることが窺
える。Furthermore, abnormal peaks exist in the DLTS signal waveform both when heat treatment is performed at 750'C in the first stage and when heat treatment is further performed at 1000°C in the second stage. It can be seen that some defects remain.
５）軽水炉中性子照射ウェーハ及び重水炉中性子照射ウ
ェーハに対する１０００℃８分の熱処理条件におけるＤ
Ｌ Ｔ’ Ｓ信号波形を第７図に示した。5) D under heat treatment conditions of 1000°C for 8 minutes for light water reactor neutron irradiated wafers and heavy water reactor neutron irradiated wafers
The L T'S signal waveform is shown in FIG.
軽水炉中性子照射ウェーハにおいて１００〜１５０にの
間に異常ピークが存在し、結晶内部に欠陥が残留してい
ることが窺える。また、重水炉中性子照射ウェーハの＃
２において、１００〜１５０にの間に小さな異常ピーク
が観測されている。これは軽水炉中性子照射ウェーハに
おいて観測された異常ピークと同等なものと考えられる
。従って、重水炉中性子照射ウェーハの１０００ ’Ｃ
８分の熱処理品においても結晶内部に欠陥が残留してい
ることが窺える。In the light water reactor neutron irradiated wafer, an abnormal peak exists between 100 and 150, indicating that defects remain inside the crystal. In addition, # of heavy water reactor neutron irradiated wafers
2, a small abnormal peak is observed between 100 and 150. This is considered to be equivalent to the abnormal peak observed in light water reactor neutron irradiated wafers. Therefore, 100'C of heavy water reactor neutron irradiated wafer
It can be seen that defects remain inside the crystal even in the product heat-treated for 8 minutes.
上記した実験の結果を総合すれば以下の結論が得られる
。By integrating the results of the experiments described above, the following conclusions can be drawn.
重水炉中性子照射ウェーハ及び軽水炉中性子照射ウェー
ハのいずれに対しても、結晶内部の欠陥を除去し、安定
な実用的抵抗率を回復するための熱処理条件としては、
９５０〜１２００℃の温度範囲で所定時間熱処理を行な
うことが必要である。For both heavy water reactor neutron irradiated wafers and light water reactor neutron irradiated wafers, the heat treatment conditions for removing defects inside the crystal and restoring stable practical resistivity are as follows:
It is necessary to perform the heat treatment at a temperature range of 950 to 1200°C for a predetermined time.
ここでいう所定時間とは１２００℃に対しては２０分以
上、１０００℃では１２０分以上、９５０℃では３６０
分以上となるものである。いずれにし°ζも、上記の温
度範囲であれば、所定時間の熱処理によって結晶内部の
欠陥が除去されるものであり、実際の操業に当たっては
、熱処理温度に対応する処理時間（抵抗率が回復し結晶
欠陥が修復するまでの時間）を予め設定しておけばよい
ものである。The predetermined time here means 20 minutes or more for 1200℃, 120 minutes or more for 1000℃, and 360 minutes or more for 950℃.
It will be more than 1 minute. In any case, within the above temperature range, defects inside the crystal will be removed by heat treatment for a predetermined period of time.In actual operation, the treatment time corresponding to the heat treatment temperature (until the resistivity recovers) will be removed. It is sufficient to set the time required for crystal defects to be repaired in advance.
以上述べたごとく、本発明によれば、所定条件の熱処理
を行なうことによって、シリコン単結晶に発生した中性
子照射による結晶欠陥を除去し、安定な実用的抵抗率を
回復することができるという大きな効果を奏する。As described above, according to the present invention, by performing heat treatment under predetermined conditions, crystal defects generated in a silicon single crystal due to neutron irradiation can be removed and stable practical resistivity can be restored, which is a great effect. play.
第１図は軽水炉中性子照射ウェーハに対する各種熱処理
条件にお４Ｊる抵抗率の変化を示すグラフ、第２図は重
水炉中性子照射ウェーハに対する各種熱処理条件におけ
る抵抗率の変化を示すグラフ、第３図は軽水炉中性子照
射ウェーハに対する二段熱処理条件にお＆Ｊる抵抗率の
変化を示すグラフ、第４図は重水炉中性子照射ウェーハ
に対する一段熱処理条件におりる抵抗率の変化を示すグ
ラフ、第５図は軽水炉中性子照射ウェーハに対する各種
熱処理条件におけるＤＬＴＳ信号波形を示すグラフ、第
６図は重水炉中性子照射ウェーハに対する各種熱処理条
件におけるＤＬＴＳ信号波形を示すグラフ及び第７図は
軽水炉中性子照射ウェーハ及び重水炉中性子照射ウェー
ハに対する１０００’Ｃ８分の熱処理条件におけるＤ
Ｌ ”「Ｓ信号波形を示すグラフである。Figure 1 is a graph showing changes in resistivity under various heat treatment conditions for light water reactor neutron irradiated wafers, Figure 2 is a graph showing resistivity changes under various heat treatment conditions for heavy water reactor neutron irradiated wafers, and Figure 3 is a graph showing resistivity changes under various heat treatment conditions for heavy water reactor neutron irradiated wafers. A graph showing the change in resistivity under two-stage heat treatment conditions for light water reactor neutron irradiated wafers, Figure 4 is a graph showing the change in resistivity under single stage heat treatment conditions for heavy water reactor neutron irradiated wafers, and Figure 5 is a graph showing changes in resistivity for light water reactor neutron irradiated wafers under one stage heat treatment conditions Graphs showing DLTS signal waveforms under various heat treatment conditions for neutron irradiated wafers, Figure 6 is a graph showing DLTS signal waveforms under various heat treatment conditions for heavy water reactor neutron irradiated wafers, and Figure 7 shows DLTS signal waveforms for light water reactor neutron irradiated wafers and heavy water reactor neutron irradiated wafers. D under heat treatment conditions of 1000'C8 minutes for
This is a graph showing the waveform of the L and S signals.
Claims (1)
９５０〜１２００℃の温度範囲で所定時間熱処理するこ
とによって中性子照射シリコン単結晶の抵抗率の回復及
び結晶欠陥の修復を行なうようにしたことを特徴とする
中性子照射シリコン単結晶の熱処理方法。(1) Silicon single crystal doped with neutron irradiation,
A method for heat treating a neutron-irradiated silicon single crystal, characterized in that the resistivity of the neutron-irradiated silicon single crystal is restored and crystal defects are repaired by heat-treating the neutron-irradiated silicon single crystal for a predetermined period of time in a temperature range of 950 to 1200°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25320790A JPH04132693A (en) | 1990-09-21 | 1990-09-21 | Heat treatment of neutron-irradiated silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25320790A JPH04132693A (en) | 1990-09-21 | 1990-09-21 | Heat treatment of neutron-irradiated silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04132693A true JPH04132693A (en) | 1992-05-06 |
Family
ID=17248047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25320790A Pending JPH04132693A (en) | 1990-09-21 | 1990-09-21 | Heat treatment of neutron-irradiated silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04132693A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633768A (en) * | 1993-10-27 | 1997-05-27 | Teac Corporation | Sheet metal frame construction for a disk apparatus |
| KR20010070619A (en) * | 2001-05-28 | 2001-07-27 | 류근걸 | Annealing technology to stabilize resistivity for neutron transmutation doping |
| JP2007535800A (en) * | 2003-10-16 | 2007-12-06 | クリー インコーポレイテッド | Method for forming a power semiconductor device using a boule-grown silicon carbide drift layer and power semiconductor device formed thereby |
| JP2015037194A (en) * | 2013-08-14 | 2015-02-23 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | Rear doping method of semiconductor disk |
| US9154894B2 (en) | 2012-12-26 | 2015-10-06 | Onkyo Corporation | Frequency characteristics determination device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357968A (en) * | 1976-11-05 | 1978-05-25 | Siemens Ag | Method of recovering defects of silicon crystal irradiated by neutron |
-
1990
- 1990-09-21 JP JP25320790A patent/JPH04132693A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5357968A (en) * | 1976-11-05 | 1978-05-25 | Siemens Ag | Method of recovering defects of silicon crystal irradiated by neutron |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633768A (en) * | 1993-10-27 | 1997-05-27 | Teac Corporation | Sheet metal frame construction for a disk apparatus |
| KR20010070619A (en) * | 2001-05-28 | 2001-07-27 | 류근걸 | Annealing technology to stabilize resistivity for neutron transmutation doping |
| JP2007535800A (en) * | 2003-10-16 | 2007-12-06 | クリー インコーポレイテッド | Method for forming a power semiconductor device using a boule-grown silicon carbide drift layer and power semiconductor device formed thereby |
| US9154894B2 (en) | 2012-12-26 | 2015-10-06 | Onkyo Corporation | Frequency characteristics determination device |
| JP2015037194A (en) * | 2013-08-14 | 2015-02-23 | インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ | Rear doping method of semiconductor disk |
| US9245811B2 (en) | 2013-08-14 | 2016-01-26 | Infineon Technologies Ag | Method for postdoping a semiconductor wafer |
| US9559020B2 (en) | 2013-08-14 | 2017-01-31 | Infineon Technologies Ag | Method for postdoping a semiconductor wafer |
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