JPH04130842A - High frequency module - Google Patents

Abstract

PURPOSE:To secure isolation between circuits and to improve a distortion characteristic by balance-connecting a bandpass filter connected between the high frequency amplifier circuit and the frequency conversion circuit, which are made into IC through the use of FET on the same substrate of a semiconductor with said circuits, integrating them and constituting a high frequency module. CONSTITUTION:In the high frequency module 1, the high frequency amplifier circuit 5 and the frequency conversion circuit 7 are made into IC on the same semiconductor substrate, and the security of a signal attenuation degree beyond a band in the bandpass filter 6 becomes important. In this example, the bandpass filter 6, the high frequency amplifier circuit 5 and the input/output circuit of the frequency conversion circuit 7 and the input/output circuit of the frequency conversion circuit 7 are balance- connection-operated. Even if there is the connection of unnecessary waves between the input/output terminals in the bandpass filter 6 which balance-operates with a high frequency signal input terminal 2 being a non-balance signal input, it is canceled by a balance operation. Since a first IC circuit 11 is balance-connected with the bandpass filter 6, unnecessary wave connection owing to the difference of ground impedance between the bandpass filter 6 and the first IC circuit 11 becomes small and the satisfactory attenuation degree beyond the band can be obtained.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is a high-frequency signal processing circuit that receives a high-frequency signal and outputs an intermediate frequency signal, or modulates and outputs a high-frequency signal with a baseband signal. In particular, the present invention relates to a high frequency module configured by integrating an IC and a filter circuit.

[Conventional technology]

Conventional receiving circuits including high frequency amplification circuits and frequency conversion circuits have been constructed using these discrete components, as described in Japanese Patent Application Laid-Open No. 180619/1983. In this conventional example, not only the circuit is integrated into an IC, but also the IC and filter are not integrated.

[Problem to be solved by the invention]

The above conventional technology does not take into account the miniaturization of IC circuits or the connection and integration of filters between integrated circuits, and in particular uses a band-pass filter that passes the required frequency band and attenuates other signals. In this case, there was a problem in that the single-circuit isolation characteristic was not sufficient and a sufficient out-of-band attenuation could not be obtained. Further, optimization of the input level of the high-frequency signal processing signal, etc. is not considered, and there is a problem that sufficient second-order and third-order distortion characteristics cannot be obtained.

An object of the present invention is to solve the above-mentioned problems, and to provide high-frequency signal processing with sufficient out-of-band attenuation due to good inter-circuit isolation characteristics and with little distortion even when multi-channel signals with a wide range of input levels are input. A small, high-performance I that can perform
The purpose of the present invention is to provide a C-based high frequency module.

[Means to solve the problem]

The above purpose is to integrate the frequency conversion circuit, high frequency modulation circuit, etc. of the amplifier circuit 1 using FETs on the same substrate of a compound semiconductor whose main component is GaAs, and to integrate the amplifier circuit, the frequency conversion circuit, or the high frequency modulation circuit. This is achieved by integrating the band-pass type band-pass filter connected between them and the circuit in a balanced manner to form a high-frequency module, thereby ensuring isolation between the circuits and improving distortion characteristics. Ru.

Additionally, by adding a gain control function to the amplifier circuit, it can handle high-frequency signals with a wide input level range.

[Effect]

GaAsFETs have superior high frequency characteristics and distortion characteristics compared to Si bipolar transistors. Therefore, the circuit section that processes high frequency signals, that is, the high frequency amplification circuit, the frequency conversion circuit, and the high frequency modulation circuit, is made of GaAsFET.
By configuring it using the above, a compact high frequency receiving circuit with excellent distortion characteristics can be obtained. In addition, the input high-frequency signal is a signal that is transmitted unimpinged, and by configuring the signal processing circuit as a balancing circuit, unnecessary coupling waves of the unbalanced signal to the circuit section where the balancing circuit is operating can be canceled out. As a result, unnecessary coupling due to stray inductive reactance, capacitive reactance, etc. of the mounting board of the integrated module can be attenuated, and a compact high-performance IC high-frequency module with good inter-circuit isolation characteristics can be obtained.

Further, gain control with less distortion is possible by controlling the operating current and operating resistance of the FET, and high frequency signal processing with less distortion can be performed even when high frequency signals from other channels are input over a wide input level range.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

FIG. 1 is a block diagram showing an embodiment of the present invention.

In the figure, l is a first high-frequency module, 11 is a first IC circuit on a semiconductor substrate (GaAS (gallium arsenide compound) as the semiconductor substrate), 2 is a high-frequency signal input terminal, 3 is a gain control terminal, and 5 is a high frequency amplifier circuit of the IC circuit 11, 6 is a band pass filter, and 7 is the first IC.
Of the conversion circuits, 8 and 9 are oscillation signal input terminals, 10 is an intermediate frequency signal output terminal, 80 is an imbalance conversion circuit, and 8 is an IF (intermediate frequency) matching circuit.
The high frequency amplifier circuit 5 is composed of FETs 51, 52, 53, bias resistors 54, 55, 58, 59, and constant current sources 56, 57.

The frequency conversion circuit 7 is composed of FETs 71, 72, and 73 having a double-balanced mixer configuration, FETs 74 and 75 in the form of a differential amplifier circuit, and a constant current source 76.

Also, 61.62.63.64 are matching capacitors, 6
5. 66 is a matching inductance, 91 is a high frequency bypass capacitor, 95 is a power supply (10B) terminal, and 96 is a ground terminal.6 The operation of the high frequency module shown in FIG. 1 will be explained.

The high frequency signal input from the high frequency signal input terminal 2 is converted into a balanced signal by the unbalanced balanced conversion circuit 80, amplified by a differential amplifier circuit type FET51.52, and sent to an impedance matching capacitor 61.62. and is input to the bandpass filter 6. The bandpass filter 6 uses a two-transducer type 5AW (surface acoustic wave filter) and performs flat impulse operation. After selectively passing only the frequency band that is the band pass filter 6, a balanced signal is outputted and inputted to a frequency conversion circuit 7, which is a differential amplifier circuit type FET.
After amplification at 74°75, F E T2O,71,72,7
Oscillation signal input terminal 8 with double balance mixer consisting of 3
and 9, to obtain a difference or sum intermediate frequency signal, which is outputted from an intermediate frequency signal output terminal 10 via an IF (intermediate frequency) matching circuit 81. Furthermore, the gain control of the high frequency amplification port JII5 is performed using an FET between the source terminals of FETs 51 and 52 in the differential amplifier circuit format.
An ET 53 is connected and the channel resistance is controlled by a control voltage from the gain control terminal 3 to change the gain.

In the first high-frequency module shown in FIG. 1, the high-frequency amplifier circuit 5 and the frequency conversion circuit 7 are integrated into an IC on the same semiconductor substrate, and it is important to ensure the degree of attenuation of out-of-band signals of the band-pass filter 6. In this embodiment, the bandpass filter 6
The input/output circuits of the high frequency amplifier circuit 5 and the frequency conversion circuit 7 are operated in balanced connection, and the input/output terminal of the bandpass filter 6 is operated in balanced connection with the high frequency signal input terminal 2 which is an unbalanced signal input. Even if there is coupling of unnecessary waves between them, it is canceled out by performing a flattening operation, and since the first IC circuit 11 and the bandpass filter 6 are connected in a balanced manner, the bandpass filter 6 Unwanted wave coupling due to the difference in ground impedance between the first IC circuit 11 and the first IC circuit 11 is also reduced, and good out-of-band attenuation can be obtained.

Furthermore, by using GaAs (gallium arsenide compound) as a semiconductor substrate, it is possible to operate at a higher frequency, and as an IC circuit element, FET has good third-order distortion characteristics and flat impulse operation. Due to the good second-order distortion characteristics of the circuit and the gain control function of the high-frequency amplifier circuit,
Multi-channel high-frequency signals with a wide range of input levels are processed (frequency converted) with little distortion.

As explained above, according to this embodiment, GaAsFETs are used in the high frequency amplifier circuit 5 and the frequency conversion circuit 7,
By connecting the bandpass filter 6 to the input/output terminals of these IC circuits, it is possible to secure out-of-band attenuation by reducing unnecessary wave coupling and to provide good 2.3rd-order distortion characteristics. A high-performance, compact high-frequency module with less distortion even when a signal is input can be obtained.

FIG. 2 is a block diagram showing a second embodiment of the invention. In the figure, 2o is the second high frequency module;
1 is a second IC circuit on a semiconductor substrate (GaAs (gallium arsenide compound) as the semiconductor substrate); 160 is a band pass filter; 82 is a matching circuit;
0 is dual game FET 153, inductance 151
, bypass capacitors 154, 156, 157, and bias resistors 152, 155. 161.1
64 and 165 are matching capacitors 162 and 163 are matching inductances in the figure.

Components that perform operations similar to those shown in FIG. 1 are given the same numbers as those shown in FIG. 1, and their explanations will be omitted.

The operation of the high frequency module shown in FIG. 2 will be explained.

The high frequency signal input from the high frequency signal input terminal 2 is sent to the matching circuit 82. The signal is inputted to the frequency conversion circuit 7 through the high frequency amplification circuit 15o and the band pass filter 160, and is frequency mixed with the local oscillation signal of opposite phase inputted from the oscillation signal input terminals 8 and 9 as in the embodiment of FIG. Alternatively, a sum intermediate frequency signal is obtained, passed through an IF (intermediate frequency) matching circuit 81, and outputted from the intermediate frequency signal output terminal 10. Theory and Technique, M Chi-Chi -33
, (1985) pp. 510-517 (IEEE,
Trans, Microwave Theor
y Teeh,.

MTT-33, (1985) PP510-517)
A W filter is used. The input terminal operates with unbalanced signals,
A 0-wire type SAW filter whose output terminals operate in a flat manner has low loss and can easily obtain better out-of-band attenuation than the embodiment shown in Fig. 1, but a bandpass filter as shown in this embodiment By connecting the output of the frequency converter circuit 7 and the input terminal of the frequency converter circuit 7, unnecessary waves (unbalanced signals of the output of the high frequency amplifier circuit 150) are prevented from being coupled between the input terminals of the band pass filter 160 and the frequency converter circuit 7. Even if there is, it is canceled out by performing a flat impulse operation, and the second IC
Since the output terminals of the converter circuit 21 and the bandpass filter 160 are balancedly connected, unnecessary wave coupling due to the difference in ground impedance between the bandpass filter 160 and the second IC circuit 21 is also reduced, and a good out-of-band signal is generated. The degree of attenuation is obtained. Note that in the high frequency amplifier circuit 150 of this embodiment, the FET
Gain control is performed by changing the voltage at the second gate of 153.

As explained above, according to this embodiment, the high frequency amplifier circuit 150 and the frequency conversion circuit 7 are equipped with GaAs F E
By using T and making a balanced connection between the bandpass filter 160 and the input terminal of the IC circuit, good out-of-band attenuation and 2.3rd-order distortion characteristics can be obtained.

A high-performance, low-loss, compact high-frequency module with less distortion even when multiple high-frequency signals are input can be obtained.

FIG. 3 is a block diagram showing a third embodiment of the present invention. In the figure, 30 is a third high frequency module;
1 is a semiconductor substrate (GaAs (as a semiconductor substrate)
Third IC circuit on gallium arsenide compound), 200
．． 201 is an intermediate wave signal input terminal, 213 is a gain control terminal, 250 is a high frequency tank 11 circuit of the IC circuit 31;
60 is a band pass filter, 270 is the third IC circuit 3
1 includes a frequency conversion circuit, 208 and 209 are oscillation signal input terminals, 212 is a transmission signal output terminal, 281 is an output matching circuit, and a high frequency amplifier circuit 250 is a dual game F E
7253, an inductance 251, bypass capacitors 254, 256, 257, and bias resistors 252 and 255. Further, the frequency conversion circuit 270 has a double-balanced mixer configuration.
3,274 and differential amplifier circuit type FET275.2
It consists of a 76° constant current source 277. Also 264
, 265 are matching capacitors, 262 and 263 are matching inductances, 267 is a matching circuit 91.92 is a high frequency bypass capacitor, 95 is a power supply (10B) terminal, 9
6 is a ground terminal.

In FIG. 3, the high frequency signal input from the intermediate frequency signal input terminal 200.201 is input to the frequency conversion circuit 270, and after being amplified by the differential amplifier circuit type FET275.276,
The frequency is mixed with a local oscillation signal of opposite phase input from the oscillation signal input terminals 208 and 209 by a double balance mixer consisting of FETs 271, 272, 273, and 274,
A band pass filter 260 obtains the difference or sum transmission signal.
The signal is input to the input signal, selectively passes only the desired frequency band, passes through the matching circuit 267, is amplified by the high frequency amplifier circuit 250, passes through the output matching circuit 281, and is output from the transmission signal output terminal 212. High frequency amplifier circuit 250 and frequency conversion circuit 270.
The band-pass filter 260 has the same circuit configuration as the embodiment shown in FIG. 2, but the input and output are connected in reverse, and a detailed explanation of its operation will be omitted.

In this embodiment, instead of converting the frequency after high frequency amplification as in the high frequency module shown in FIGS. 1 and 2, high frequency amplification is performed after frequency conversion. By connecting the output terminals of the circuit 270 in parallel, the bandpass filter 26
Even if there is coupling of unnecessary waves in the 0 and high frequency amplifier circuits 250, it is canceled out due to the flat impulse operation, and
Since the input terminals of the IC circuit 31 and the band-pass filter 260 are balancedly connected, the band-pass filter 2
Unnecessary wave coupling due to the difference in ground impedance between the third IC circuit 60 and the third IC circuit 31 is also reduced, and good out-of-band attenuation can be obtained.

FIG. 4 is a block diagram showing a fourth embodiment of the present invention. In the figure, 40 is a fourth high frequency module;
1 is a fourth IC circuit on a semiconductor substrate (GaAs (gallium arsenide compound) as a semiconductor substrate); 301, 302;
, 302 and 303 are data input terminals, 300 is a high frequency modulation signal output terminal, 308 and 309 are high frequency modulated signal input terminals, and 370 is a high frequency modulation circuit. The high frequency modulation circuit 370 includes phase inversion amplifier circuits 320, 321, and FETs 330.331.332.3 having a double balance mixer configuration.
33 and differential amplifier circuit type FETs 334.335. FE with constant current source 336 and the same double-balanced mixer configuration
T340.341.342.343, differential amplifier circuit type FET344.345, constant current source 346 and load resistor 3
It is composed of 50.351.

In the figure, parts that perform the same operations as those in FIG. 1.2.3 are given the same numbers as those in FIG. 1.2.3, and their explanations are omitted.

The operation of the high frequency module shown in FIG. 4 will be explained. FIG. 4 shows a quadrature modulator.

Data input terminals 301 and 302 and data input terminal 303
The data (Q, Q') (I, I') from 304 and 304 are data for digital quadrature modulation, and are input as a pair with inverted phases. A double balance mixer composed of F E Ta2O to 333 will be explained. Data from data input terminals 301 and 302 = cos (
Φ(t) ) v I' = −cos (Φ(t
)) is applied via FETs 334 and 335 to the source terminals of a double balanced mixer consisting of FETs 330 to 333. The F E of this double balance mixer
TaS2 and 332, 330 and 333 have high frequency modulated signal input terminals 308. From phase inversion amplifier circuit 3
The oscillation signal cos (2πFC-
t) and -cos (2*Fc-t) are added, and FETs 330 to 333 perform switching operations by this signal. Multiplication components of cos(2πFc#t)#cos(Φ(t)) are obtained from the drains of FETs 330 and 332, respectively, and at this time, the data signal and oscillation signal are in reverse phase from FET Ta2O, 332. Since they are output with equal amplitude and the drains are connected, the data signal and oscillation signal are canceled and added together.
cos (2tcFc-t) ・cos (Φ(1))
Only the modulated signal is obtained. Similarly, FE TaS2
．． From 333, the added -2 cos(2πFc-t
)・cos(Φ(t)) only is obtained. On the other hand, in a double-balanced mixer composed of FETs 340 to 343, data from data input terminals 303 and 304 is Q=sin(Φ(t))t Q'==-sin(Φ(
t)) FET34 via FET344.345
It is applied to the source terminal of a double balanced mixer consisting of 0 to 343. At this time, the oscillation signal from the high frequency modulated signal input terminal 309 is sent to the double balanced mixer composed of FETs 330 to 333, and the phase difference is 90''.
n (2πFQ-t) is applied, F E Ta2O,
From 342 -2・sin(2gFc-t)・5in(
Φ(t)) is 2 ・s from F E T341°343
A modulated signal of in (2zFc-t) · sin (Φ(1)) is obtained. This causes FET330, 332
．． From 340.342, 2・cos(2πFc・t+Φ
(t)), F E TaS2.333.341
．． From 343, -2・cos(2πFc-t+Φ(t)
) is sent to the high frequency modulation circuit 370.
I'm getting it from This balanced modulation signal passes through a matching capacitor 264 and 265, a matching inductance 262 and 263, and a band pass filter 260 260, where they are balanced and added, allowing only the desired signal band to pass, and then sent to a high frequency amplifier circuit. After being amplified in step 250, it is outputted from the high frequency modulation signal output terminal 300 via the output matching circuit 281.

In this embodiment, a quadrature modulator for orthogonal digital data is used, and the high frequency is amplified after modulation.
By connecting the output terminals of the fourth IC circuit 41 in a balanced manner, even if unnecessary waves are coupled in the band pass filter 260 and the high frequency amplification circuit 250, it is canceled out by performing a flat impulse operation. Since the input terminals of the bandpass filter 250 and the fourth IC circuit 41 are balancedly connected, unnecessary wave coupling due to the difference in ground impedance between the bandpass filter 250 and the fourth IC circuit 41 is also reduced, and good out-of-band attenuation can be obtained. It will be done. Furthermore, in the quadrature modulator of this embodiment, the oscillation signal and the data signal are canceled in principle and are not output, so there is no need for an extra low-pass filter, and the modulation is compact and reduces unnecessary spurious by simply using an integrated SAW filter. It has the advantage of being able to be configured as a container. Furthermore, according to this embodiment, the high frequency amplifier circuit 2
50 and high frequency modulation port M370.
By using an FET and connecting the bandpass filter 260 and the input terminal of the IC circuit in a balanced manner, a high-performance, low-loss, and compact design with good out-of-band attenuation and 2.3-order distortion characteristics is achieved. A high frequency module is obtained.

〔Effect of the invention〕

According to the present invention, an IC circuit including at least a high-frequency amplification circuit, a frequency conversion circuit, a high-frequency modulation circuit, etc. and formed on the same semiconductor substrate and a bandpass filter are integrally formed, and a band-pass filter is integrated to receive a high-frequency signal and Bands are selected and amplified using a converter band-pass filter. Or in a high-frequency module that has functions such as high-frequency amplification followed by band selection with a band-pass filter and frequency conversion, or high-frequency modulation followed by band selection with a band-pass filter and amplification.

The semiconductor substrate is made of GaAs (gallium arsenide compound), FET is used as the circuit element, and the input or output of the bandpass filter is balancedly connected to the input or output of the high frequency amplifier circuit 1 frequency conversion circuit and high frequency modulation circuit. By equipping the high-frequency amplifier circuit with a gain control function, it is possible to process multi-channel signals at higher frequencies with a wide input level range with less 2.3rd-order distortion and good out-of-band attenuation characteristics. A high-performance, low-loss, and compact high-frequency module can be obtained.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a first embodiment of the invention, FIG. 2 is a diagram showing a second embodiment of the invention, FIG. 3 is a diagram showing a third embodiment of the invention, and FIG. 4 is a diagram showing a third embodiment of the invention. The figure shows a fourth embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... First high frequency module, 2... High frequency signal input terminal, 3... Gain control terminal, 5... High frequency amplifier circuit, 6... Bandpass filter, 7... Frequency conversion circuit , 8.9... Oscillation signal input terminal, 10... Intermediate frequency signal output terminal, 11... First IC circuit, 20... Second high frequency module, 21... Second IC circuit, 30... Third high frequency module, 31... Third IC circuit, 40... Fourth high frequency module, 41... Fourth IC circuit, 150... High frequency amplifier circuit. 160... Band pass filter, 200, 201... Intermediate wave signal input terminal, 208, 2
09... Oscillation signal input terminal, 212... Transmission signal output terminal, 213... Gain control terminal, 250... High frequency amplifier circuit, 260... Band pass filter, 270... Frequency conversion circuit, 301, 302.302.303...Data input terminal, 300...High frequency modulation signal output terminal, 308, 30
9... High frequency modulated signal input terminal, 370... High frequency modulation circuit.

Claims (1)

[Claims] 1. A high-frequency amplifier circuit to which a high-frequency signal is input, and a frequency conversion circuit to which the amplified high-frequency signal and oscillation signal are input and output an intermediate frequency signal are formed on the same semiconductor substrate, and , in a high frequency module having an integrated configuration with a bandpass filter connected between the circuits, at least two input/output circuits of the high frequency amplification circuit, the frequency conversion circuit, and the bandpass filter are balancedly connected. A high frequency module characterized by: 2. A high frequency modulation circuit which receives orthogonal data signals (I and Q data) and a high frequency signal, modulates the high frequency signal with the above I and Q data, and outputs a high frequency modulated signal, and a high frequency signal after modulation. In a high frequency module having an integrated configuration in which input high frequency amplification circuits are formed on the same semiconductor substrate and a bandpass filter is connected between the circuits, the high frequency modulation circuit, the high frequency amplification circuit, and the bandpass filter are integrated. A high frequency module characterized in that at least two of the input/output circuits are balancedly connected. 3. A frequency conversion circuit that inputs a high frequency signal and an oscillation signal and outputs an intermediate frequency signal, and a high frequency amplification circuit that inputs and amplifies the intermediate frequency signal are formed on the same semiconductor substrate, and a band pass is formed between the circuits. A high frequency module formed by connecting and integrating filters, characterized in that the input/output circuits of at least two of the frequency conversion circuit, the high frequency amplification circuit, and the band pass filter are balancedly connected. High frequency module. 4. The high frequency module according to claim 1 or 2, wherein the high frequency amplification circuit has a gain control function. 5. The semiconductor substrate according to claim 1, 2, 3 or 4 is made of GaA.
A high frequency module characterized by being a compound semiconductor substrate containing s (gallium arsenide) as a main component.