JPH04129664A - Polishing method for work - Google Patents
Polishing method for workInfo
- Publication number
- JPH04129664A JPH04129664A JP2244925A JP24492590A JPH04129664A JP H04129664 A JPH04129664 A JP H04129664A JP 2244925 A JP2244925 A JP 2244925A JP 24492590 A JP24492590 A JP 24492590A JP H04129664 A JPH04129664 A JP H04129664A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing liquid
- surface roughness
- liquid
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title description 15
- 239000007788 liquid Substances 0.000 claims abstract description 71
- 239000002245 particle Substances 0.000 claims abstract description 55
- 230000003746 surface roughness Effects 0.000 claims abstract description 29
- 238000003672 processing method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 238000007517 polishing process Methods 0.000 description 10
- 239000004744 fabric Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、例えば磁気ディスク用アルミニウム基板等
のワークに、所定の粗さの研磨加工を施す方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for polishing a workpiece such as an aluminum substrate for a magnetic disk to a predetermined roughness.
従来の技術及び課題
従来、例えば上記のような磁気ディスク用アルミニウム
基板の研磨加工は、これを所定の表面粗さに研磨加工す
る研磨粒子を含む一種類の研磨液を用い、これを研磨装
置に供給しつつ、該装置の研磨布と基板とを相互に摺擦
させることによって行われていた。Conventional techniques and problems Conventionally, polishing of aluminum substrates for magnetic disks as described above, for example, uses one type of polishing liquid containing abrasive particles that polish the substrate to a predetermined surface roughness, and this is applied to a polishing device. This was done by rubbing the polishing cloth of the device and the substrate against each other while supplying the polishing material.
しかしながら、上記の方法では、初めから最後まで、所
定の表面粗さに研磨加工する一種類の研磨液を使用して
研磨加工を行うものであるため、研磨加工に多くの時間
を要する。特に、研磨しようとする基板の表面粗さと、
研磨加工によって得ようとする表面粗さとの間の開きか
大きくなればなるほど、研磨加工に要する時間が長いも
のとなってしまう。However, in the above method, since the polishing process is performed from beginning to end using one type of polishing liquid that polishes the surface to a predetermined surface roughness, it takes a long time for the polishing process. In particular, the surface roughness of the substrate to be polished,
The larger the difference between the desired surface roughness and the polishing process, the longer the time required for the polishing process.
この発明は、かかる問題点に鑑み、ワークを所定の表面
粗さに研磨加工する所要時間の短縮を図ることができる
研磨加工法を提供することを目的とする。In view of these problems, it is an object of the present invention to provide a polishing method that can shorten the time required to polish a workpiece to a predetermined surface roughness.
課題を解決するための手段
上記目的において、この発明は、ワークの表面粗さを所
定の表面粗さに研磨加工する研磨粒子を含む研磨液と、
前記ワークの表面粗さを前記研磨液の使用により得られ
る表面粗さよりも大きい表面粗さに研磨加工する相対的
に粒径の大なる研磨粒子を含む1種又は複数種の研磨液
とを用い、研磨装置に供給する研磨液を研磨装置の作動
中に研磨粒子の大なる研磨液から小なる研磨液へと切り
換えていくことを特徴とするワークの研磨加工法を要旨
とする。Means for Solving the Problems To achieve the above object, the present invention provides a polishing liquid containing abrasive particles for polishing the surface roughness of a workpiece to a predetermined surface roughness;
Using one or more types of polishing liquid containing relatively large abrasive particles that polish the surface of the workpiece to a surface roughness greater than that obtained by using the polishing liquid. The gist of the present invention is a method for polishing a workpiece, which is characterized in that the polishing liquid supplied to the polishing device is switched from a polishing liquid with large abrasive particles to a polishing liquid with small abrasive particles while the polishing device is in operation.
なお、上記方法において、各研磨液の切替え時に前の研
磨液を除去するリンス液を供給するようにするのが好ま
しい。In the above method, it is preferable to supply a rinsing liquid for removing the previous polishing liquid when switching between each polishing liquid.
作用
上記方法では、研磨粒子の大きいものから小さいものへ
と研磨液を換えていくものとなされていることにより、
ワークの表面粗さを所定の表面粗さに研磨加工する正味
の加工時間が短縮される。Effect In the above method, the polishing liquid is changed from one with large abrasive particles to one with small abrasive particles, so that
The net processing time for polishing the surface roughness of the workpiece to a predetermined surface roughness is reduced.
しかも、これらの研磨液を研磨装置の作動中に切り換え
ていくものとなされていることにより、研磨液の切換え
に要する時間が短縮される。Moreover, since these polishing liquids are switched during operation of the polishing apparatus, the time required for switching the polishing liquid is shortened.
従って、研磨加工の開始から終了までの所要時間が短縮
される。Therefore, the time required from the start to the end of the polishing process is shortened.
実施例
以下に、本発明方法の実施例を、第3図に示されるよう
な磁気ディスク用アルミニウム基板(以下、単に「基板
」という。)(A)を第1図及び第2図に示されるよう
な遊星歯車機構式の研磨装置(1)にて研磨する場合に
適用して説明する。なお、本発明方法で研磨加工するワ
ークは磁気ディスク用基板(A)に限定されるものでは
ないし、また研磨装置も遊星歯車機構式のものに限定さ
れるものではない。EXAMPLE Below, an example of the method of the present invention will be described using an aluminum substrate for a magnetic disk (hereinafter simply referred to as "substrate") (A) as shown in FIG. 3 and as shown in FIGS. 1 and 2. The following description applies to polishing with a planetary gear mechanism type polishing device (1). Note that the workpiece to be polished by the method of the present invention is not limited to the magnetic disk substrate (A), and the polishing apparatus is not limited to a planetary gear mechanism type.
上記の研磨装置(1)は、回転作動及び昇降作動可能に
保持されかつ上面にドーナツ状の研磨布(2)か取着さ
れた下定盤(3)と、該下定盤(3)の上方位置に該定
盤(3)と対向同軸状に配置されると共に回転作動及び
昇降作動可能に保持されかつ下面に同じくドーナツ状の
研磨布(4)が取着された上定盤(5)と、各研磨布(
2)(4)間において研磨布の軸芯位置に配置された太
陽歯車(7)と、該太陽歯車(7)の径方向外方位置に
同心状に配置された内歯歯車(9)と、該内歯歯車(9
)及び前記太陽歯車(7)の両歯車に噛合され下部定盤
(3)の研磨布(2)上に載置された状態で両歯車(7
)(9)間に配置された外歯歯車によるワークキャリア
ー(6)とを具備するものである。The above-mentioned polishing device (1) includes a lower surface plate (3) that is rotatably and vertically movable and has a donut-shaped polishing cloth (2) attached to its upper surface, and a lower surface plate (3) located above the lower surface plate (3). an upper surface plate (5) which is disposed coaxially opposite to the surface plate (3), is held rotatably and movably up and down, and has a donut-shaped polishing cloth (4) attached to its lower surface; Each polishing cloth (
2) A sun gear (7) disposed at the axial center position of the polishing cloth between (4), and an internal gear (9) concentrically disposed at a position radially outward of the sun gear (7). , the internal gear (9
) and the sun gear (7) and placed on the polishing cloth (2) of the lower surface plate (3).
) (9) and a work carrier (6) formed by an external gear disposed between the two.
そして、基板(A)をワークキャリアー(6)の保持孔
(6a)内に配置し該基板(A)の両面に上下の研磨布
(2)(4)を押し当てた状態にして、研磨液の供給下
、太陽歯車(7)を回転駆動することによりワークキャ
リアー(6)を自転させながら太陽歯車(7)の回りで
公転させ、更に上下の定盤(3)(5)を相互逆方向に
回転駆動して基板(A)の両面の研磨加工を行うものと
なされている。Then, the substrate (A) is placed in the holding hole (6a) of the work carrier (6), and the upper and lower polishing cloths (2) and (4) are pressed against both sides of the substrate (A), and the polishing liquid is applied. The work carrier (6) is rotated and revolved around the sun gear (7) by rotating the sun gear (7) while being supplied with The polishing process is performed on both sides of the substrate (A) by rotationally driving the substrate (A).
そして、本実施例方法では、2種類の研磨液と、その他
リンス液を使用する。In the method of this embodiment, two types of polishing liquids and other rinsing liquids are used.
研磨液は、アルミナ、ダイヤモンド等による研磨粒子を
含むもので、一つは、基板(A)の表面粗さを、目標と
する所定の表面粗さに研磨加工する粒径の研磨粒子を含
む研磨液(以下、便宜上「小粒径研磨液」という。)で
ある。かかる研磨粒子は、その粒径が例えば0,6〜2
゜OJBの範囲内において設定されたものが用いられる
。The polishing liquid contains abrasive particles made of alumina, diamond, etc., and one is a polishing solution containing abrasive particles of a particle size that polishes the surface roughness of the substrate (A) to a predetermined target surface roughness. liquid (hereinafter referred to as "small particle size polishing liquid" for convenience). Such abrasive particles have a particle size of, for example, 0.6 to 2
゜Those set within the range of OJB are used.
もう一つは、基板(A)の表面粗さを前記小粒径研磨液
の使用により得られる表面粗さよりも大きい表面粗さに
研磨加工する相対的に粒径の大なる研磨粒子を含む研磨
液(以下、便宜上「大粒径研磨液」という。)である。The other is polishing that includes relatively large abrasive particles to polish the surface of the substrate (A) to a surface roughness greater than that obtained by using the small-particle polishing liquid. liquid (hereinafter referred to as "large particle polishing liquid" for convenience).
かかる研磨粒子は、その粒径が例えば2.0〜5.
Oumの範囲内において設定されたものが用いられる。Such abrasive particles have a particle size of, for example, 2.0 to 5.
The one set within the range of Oum is used.
なお、大粒径研磨液は、研磨粒子の大きさの異なる複数
種類を用意しておいてもよい。Note that a plurality of types of large-particle polishing liquid having different sizes of abrasive particles may be prepared.
リンス液の供給は、研磨装置(1)に供給された研磨液
を外部に効率良く除去するために行うもので、例えば純
水や、純水に界面活性剤を含ませた液などが使用される
。The rinsing liquid is supplied to efficiently remove the polishing liquid supplied to the polishing device (1) to the outside.For example, pure water or a liquid containing a surfactant in pure water is used. Ru.
さて、本実施例では、基板(A)の研磨を、次のように
して行う。該基板(A)を研磨装置(1)のワークキャ
リアー(6)の保持孔(6a)内に配置し、上定盤(5
)を下降させ基板(A)の両面を上下の研磨布(2)(
4)で挾んだ状態にすると共に、大粒径研磨液の供給を
開始し、同時に太陽歯車(7)、及び上下の定盤(3)
(5)の回転を開始する。基板(A)は大粒径研磨液の
供給により勢いよく研磨されていく。In this embodiment, the substrate (A) is polished as follows. The substrate (A) is placed in the holding hole (6a) of the work carrier (6) of the polishing device (1), and the upper surface plate (5
) and polish both sides of the substrate (A) with upper and lower polishing cloths (2) (
4), start supplying the large-particle polishing liquid, and at the same time remove the sun gear (7) and the upper and lower surface plates (3).
Start rotating (5). The substrate (A) is vigorously polished by supplying the large-particle polishing liquid.
そして、この研磨液供給下で所定時間研磨加工を行った
後、太陽歯車(7)、及び上下の定盤(3)(5)の回
転をそのままの状態に維持しつつ、今度は大粒径研磨液
にかえてリンス液の供給を所定時間行う。これにより、
研磨装置(1)内に残存している大粒径研磨液が外部に
除去されていく。After polishing for a predetermined time while supplying this polishing liquid, while maintaining the rotation of the sun gear (7) and the upper and lower surface plates (3) and (5) as they are, polishing A rinsing liquid is supplied instead of the polishing liquid for a predetermined period of time. This results in
The large-particle polishing liquid remaining in the polishing device (1) is removed to the outside.
次いで、同じく太陽歯車(7)、及び上下の定盤C3)
(5)の回転をそのままの状態に維持しつつ、今度は、
リンス液の供給にかえて小粒径研磨液の供給を行う。こ
れを所定時間継続することにより、基板(A)の表面粗
さは目標とする表面粗さに研磨加工される。以上により
、基板(A)の研磨加工は終了する。Next, the sun gear (7) and the upper and lower surface plates C3)
While keeping the rotation in (5) as it is, this time,
A small-particle polishing liquid is supplied instead of a rinsing liquid. By continuing this for a predetermined period of time, the surface roughness of the substrate (A) is polished to a target surface roughness. With the above steps, the polishing process of the substrate (A) is completed.
上記の方法により基板(A)の研磨加工を行えば、大粒
径研磨液の供給によって基板(A)の表面粗さがある程
度小さい粗さにまですばやく研磨されるから、小粒径研
磨液の供給による研磨時間とあわせた正味の研磨加工時
間の短縮を図ることができ、しかも両研磨液を研磨装置
(1)の作動中に順次切り換えていくものであるから、
研磨液切換え時間の短縮をも図ることかできる。If the substrate (A) is polished by the above method, the surface roughness of the substrate (A) will be quickly polished to a certain level of roughness by supplying the large-particle polishing liquid. The net polishing time including the supply polishing time can be shortened, and both polishing liquids are switched sequentially while the polishing device (1) is in operation.
It is also possible to shorten the polishing liquid switching time.
加えて、本実施例方法では、大粒径研磨液の供給終了後
にリンス液を供給するものとなされているから、その大
粒径研磨液が研磨装置(1)からすばやく除去され、小
粒径研磨液の供給開始と同時にこの小粒径研磨液のみが
存在する環境下での基板(A)の研磨加工が行われるこ
とになり、小粒径研磨液による研磨時間の短縮を図るこ
とができる。In addition, in the method of this embodiment, the rinsing liquid is supplied after the large-particle polishing liquid has been supplied, so that the large-particle polishing liquid can be quickly removed from the polishing device (1), and the small-particle polishing liquid can be quickly removed from the polishing device (1). At the same time as the supply of the polishing liquid is started, the substrate (A) is polished in an environment where only this small-particle polishing liquid exists, and the polishing time can be shortened by using the small-particle polishing liquid. .
因みに、粒径0.8JJmの研磨粒子を含む小粒径研磨
液を終始用いて基板(A)を片面5Jjm研磨したとこ
ろ、該基板(A)の表面粗さは20人となり、その所要
時間は15分であったのに対し、粒径3.0摩の研磨粒
子を含む大粒径研磨液を用いて基板(A)を6分間研磨
した後、30秒間リンス液の供給を行い、モして粒径0
68−の研磨粒子を含む小粒径研磨液を用いて該基板(
A)を初めの状態から片面5Jaのところまで研磨した
ところ、該基板(A)の表面粗さは25人となり、小粒
径研磨液を用いた研磨時間は3分であった。即ち、従来
法では15分かかった研磨加工全体の所要時間を本発明
方法によれば9分30秒間に大幅に短縮しうろことを確
認し得た。なお、粒径3. Ocmの研磨粒子を含む
大粒径研磨液を終始用いて基板(A)を片面5uIa研
磨したところ、該基板(A)の表面粗さは40人となり
、その所要時間は7分30秒であった。Incidentally, when the substrate (A) was polished by 5 Jjm on one side using a small-particle polishing liquid containing abrasive particles with a particle size of 0.8 JJm, the surface roughness of the substrate (A) was 20 people, and the required time was After polishing the substrate (A) for 6 minutes using a large-particle polishing liquid containing abrasive particles with a particle size of 3.0 mm, a rinsing liquid was supplied for 30 seconds, and particle size 0
The substrate (
When substrate (A) was polished from the initial state to 5 Ja on one side, the surface roughness of the substrate (A) was 25, and the polishing time using a small particle size polishing liquid was 3 minutes. That is, it was confirmed that the time required for the entire polishing process, which took 15 minutes using the conventional method, could be significantly shortened to 9 minutes and 30 seconds using the method of the present invention. In addition, particle size 3. When the substrate (A) was polished by 5uIa on one side using a large-particle polishing liquid containing polishing particles of Ocm, the surface roughness of the substrate (A) was 40 people, and the required time was 7 minutes and 30 seconds. Ta.
発明の効果
上述の次第で、この発明のワークの研磨加工法は、ワー
クの表面粗さを所定の表面粗さに研磨加工する研磨粒子
を含む研磨液と、前記ワークの表面粗さを前記研磨液の
使用により得られる表面粗さよりも大きい表面粗さに研
磨加工する相対的に粒径の大なる研磨粒二を含む工ない
し複数の研磨液とを用い、研磨装置に供給する研磨液を
研磨装置の作動中に研磨粒子の大なる研磨液から小なる
研磨液へと切り換えていくものであるから、正味の研磨
加工時間と、研磨液の切替え時間の双方の時間が短縮さ
れ、従って研磨加工の開始から終了までの全体の所要時
間の短縮を図ることができる。Effects of the Invention As described above, the workpiece polishing method of the present invention includes: a polishing liquid containing abrasive particles for polishing the surface roughness of the workpiece to a predetermined surface roughness; Polishing the polishing liquid supplied to the polishing device using a polishing process or a plurality of polishing liquids containing relatively large abrasive particles that polish the surface to a surface roughness greater than that obtained by using a polishing liquid. Since the polishing liquid with large abrasive particles is switched to a polishing liquid with small abrasive particles during operation of the device, both the net polishing time and the time to change the polishing liquid are shortened, and therefore the polishing process is The overall time required from start to finish can be reduced.
第1図は本発明方法に使用される研磨装置の一例を示す
部分断面側面図、第2図は第1図の■−■線矢視図、第
3図は研磨加工の対象である磁気ディスク用基板の斜視
図である。
(1)・・・研磨装置、(A)・・・磁気ディスク用ア
ルミニウム基板。
(−WFig. 1 is a partially sectional side view showing an example of a polishing apparatus used in the method of the present invention, Fig. 2 is a view taken along the line ■-■ in Fig. 1, and Fig. 3 is a magnetic disk to be polished. FIG. (1)...Polishing device, (A)...Aluminum substrate for magnetic disk. (-W
Claims (1)
粒子を含む研磨液と、前記ワークの表面粗さを前記研磨
液の使用により得られる表面粗さよりも大きい表面粗さ
に研磨加工する相対的に粒径の大なる研磨粒子を含む1
種又は複数種の研磨液とを用い、研磨装置に供給する研
磨液を研磨装置の作動中に研磨粒子の大なる研磨液から
小なる研磨液へと切り換えていくことを特徴とするワー
クの研磨加工法。A polishing liquid containing abrasive particles that polishes the surface of a workpiece to a predetermined surface roughness, and polishing the workpiece to a surface roughness greater than that obtained by using the polishing liquid. Contains abrasive particles with relatively large particle size 1
Polishing of a workpiece, characterized in that the polishing liquid supplied to the polishing device is switched from a polishing liquid with large abrasive particles to a polishing liquid with small abrasive particles while the polishing device is operating. Processing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2244925A JPH04129664A (en) | 1990-09-14 | 1990-09-14 | Polishing method for work |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2244925A JPH04129664A (en) | 1990-09-14 | 1990-09-14 | Polishing method for work |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04129664A true JPH04129664A (en) | 1992-04-30 |
Family
ID=17126015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2244925A Pending JPH04129664A (en) | 1990-09-14 | 1990-09-14 | Polishing method for work |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04129664A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006324417A (en) * | 2005-05-18 | 2006-11-30 | Sumco Corp | Wafer-polishing apparatus and wafer-polishing method |
JP2011204327A (en) * | 2010-03-26 | 2011-10-13 | Showa Denko Kk | Method for manufacturing substrate for magnetic recording medium |
JP2012043493A (en) * | 2010-08-17 | 2012-03-01 | Showa Denko Kk | Method for manufacturing substrate for magnetic recording medium |
-
1990
- 1990-09-14 JP JP2244925A patent/JPH04129664A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006324417A (en) * | 2005-05-18 | 2006-11-30 | Sumco Corp | Wafer-polishing apparatus and wafer-polishing method |
US7717768B2 (en) | 2005-05-18 | 2010-05-18 | Sumco Corporation | Wafer polishing apparatus and method for polishing wafers |
JP4524643B2 (en) * | 2005-05-18 | 2010-08-18 | 株式会社Sumco | Wafer polishing method |
JP2011204327A (en) * | 2010-03-26 | 2011-10-13 | Showa Denko Kk | Method for manufacturing substrate for magnetic recording medium |
JP2012043493A (en) * | 2010-08-17 | 2012-03-01 | Showa Denko Kk | Method for manufacturing substrate for magnetic recording medium |
US8827769B2 (en) | 2010-08-17 | 2014-09-09 | Showa Denko K.K. | Method of producing substrate for magnetic recording media |
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