JPH0412616B2 - - Google Patents
Info
- Publication number
- JPH0412616B2 JPH0412616B2 JP2261084A JP2261084A JPH0412616B2 JP H0412616 B2 JPH0412616 B2 JP H0412616B2 JP 2261084 A JP2261084 A JP 2261084A JP 2261084 A JP2261084 A JP 2261084A JP H0412616 B2 JPH0412616 B2 JP H0412616B2
- Authority
- JP
- Japan
- Prior art keywords
- acid
- group
- concentrated
- inorganic
- epitaxial wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 7
- 239000007848 Bronsted acid Substances 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 GaP Chemical class 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明な周期律表第ｂ族及び第ｂ族元素か
らなる無機化合物（以下「−族化合物」とい
う。）エピタキシヤルウエハの表面処理方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface treatment method for an epitaxial wafer made of an inorganic compound (hereinafter referred to as a "-group compound") consisting of Group B and Group B elements of the periodic table.
GaP、GaAs、Ga1-xAlxAs、GaAs1-xPx等の
−族化合物の単結晶は、発光ダイオード、半
導体レーザー、FET等の製造に用いられている。 Single crystals of − group compounds such as GaP, GaAs, Ga 1-x AlxAs, and GaAs 1-x Px are used in the manufacture of light-emitting diodes, semiconductor lasers, FETs, and the like.
これらの素子を製造する場合、GaAs、GaP等
の単結晶基板上に気相エピタキシヤル成長法又は
液相エピタキシヤル成長法により単結晶層を形成
したエピタキシヤルウエハが用いられる。 When manufacturing these devices, an epitaxial wafer is used in which a single crystal layer is formed on a single crystal substrate such as GaAs or GaP by vapor phase epitaxial growth or liquid phase epitaxial growth.
これらのエピタキシヤルウエハは、製造後、カ
ーボン、その他の汚染物を除去するために、純水
中における超音波洗浄法等の方法によつて洗浄し
た後乾燥することが行なわれている。この場合、
洗浄及び乾燥むらのために、エピタキシヤルウエ
ハ面に斑点状のしみが生じることが多かつた。 After manufacturing, these epitaxial wafers are cleaned by ultrasonic cleaning in pure water or the like to remove carbon and other contaminants, and then dried. in this case,
Spot-like stains often appeared on the epitaxial wafer surface due to uneven cleaning and drying.
従来、このようなしみを除去するために、エピ
タキシヤルウエハの表面を再度ポリシングするこ
とが行なわれていた。 Conventionally, to remove such stains, the surface of the epitaxial wafer has been polished again.
しかしながら、かかるポリシングを行なうこと
は、手数を要し生産性を低下することとなるので
簡便なしみの除去方法が必要とされていた。 However, since performing such polishing is time-consuming and reduces productivity, there is a need for a simple method for removing stains.
本発明者等は、簡便なしみの除去方法を見出す
ことを目的として鋭意研究を重ねた結果本発明に
到達したものであつて、本発明の上記の目的は、
単結晶基板上に−族化合物単結晶薄膜をエピ
タキシヤル成長させて得られるエピタキシヤルウ
エハを洗浄乾燥する際に生じるしみを除去する方
法において、上記しみを生じたエピタキシヤルウ
エハを無機ブレンステツド酸中に浸漬してしみを
除去することを特徴とする方法により達せられ
る。 The present inventors have arrived at the present invention as a result of extensive research aimed at finding a simple method for removing stains.
In a method for removing stains that occur when cleaning and drying an epitaxial wafer obtained by epitaxially growing a single-crystal thin film of a - group compound on a single-crystal substrate, the epitaxial wafer with the stain is placed in an inorganic Bronsted acid. This is achieved by a method characterized by removing stains by soaking.
本発明方法に用いられる処理液としては無機ブ
レンステツド酸が適当である。特に、濃硫酸（70
〜98％）、又は濃塩酸（20〜38％）が好ましく、
濃燐酸（75％以上）、濃硝酸（60〜95％）等も用
いられる。なお、濃度の低い酸ではしみの除去に
長時間を要するので好ましくない。 Inorganic Bronsted acid is suitable as the treatment liquid used in the method of the present invention. In particular, concentrated sulfuric acid (70
~98%) or concentrated hydrochloric acid (20-38%) is preferred;
Concentrated phosphoric acid (75% or more), concentrated nitric acid (60-95%), etc. are also used. Note that acid with low concentration is not preferred because it takes a long time to remove stains.
本発明方法においては、洗浄、乾燥むらによつ
て、表面に斑点状のしみを生じたエピタキシヤル
ウエハを室温で短時間、例えば20〜90秒程度浸漬
する。しみが除去されたことを確認した後、エピ
タキシヤルウエハを取り出して通常の方法によつ
て水洗乾燥される。例えば、純水によりカスケー
ド洗浄し、続いて、iso−プロパノールで水分を
除去した後フレオン乾燥する。 In the method of the present invention, an epitaxial wafer with speckled stains on its surface due to uneven cleaning and drying is immersed at room temperature for a short time, for example, about 20 to 90 seconds. After confirming that the stain has been removed, the epitaxial wafer is removed and washed and dried using conventional methods. For example, cascade cleaning is performed with pure water, followed by removing water with iso-propanol, followed by Freon drying.
本発明方法が適用される−族化合物として
は、GaAs、GaP、GaAs1-xPx（０＜ｘ＜１）、
Ga1-xAlxAs（０＜ｘ＜１）、InP、InAs等が例示
される。 - Group compounds to which the method of the present invention is applied include GaAs, GaP, GaAs 1-x Px (0<x<1),
Examples include Ga 1-x AlxAs (0<x<1), InP, and InAs.
本発明方法によると、しみが生じたウエハをポ
リシングする必要がなく、極めて容易にしみを除
去でき、かつ、ウエハの表面が腐蝕されることが
ない。 According to the method of the present invention, there is no need to polish the wafer with the stain, the stain can be removed very easily, and the surface of the wafer is not corroded.
したがつて、−族化合物エピタキシヤルウ
エハの生産性を向上させることができる。 Therefore, the productivity of - group compound epitaxial wafers can be improved.
Claims (1)
族元素からなる無機化合物単結晶薄膜をエピタキ
シヤル成長させて得られるエピタキシヤルウエハ
を洗浄乾燥する際に上記ウエハの表面に生じるし
みを除去する方法において、上記しみを生じたウ
エハを無機ブレンステツド酸中に浸漬してしみを
除去することを特徴とする方法。 ２ 無機ブレンステツド酸が濃硫酸、濃塩酸、濃
燐酸及び濃硝酸からなる群から選ばれた一種の酸
である特許請求の範囲第１項記載の方法。[Claims] 1. Group b and group b of the periodic table on a single crystal substrate.
In a method for removing stains that occur on the surface of an epitaxial wafer obtained by epitaxially growing an inorganic compound single crystal thin film consisting of group elements, the wafer with the stain is removed in an inorganic Bronsted acid. A method characterized by removing stains by soaking them in water. 2. The method according to claim 1, wherein the inorganic Brønsted acid is an acid selected from the group consisting of concentrated sulfuric acid, concentrated hydrochloric acid, concentrated phosphoric acid, and concentrated nitric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2261084A JPS60167333A (en) | 1984-02-09 | 1984-02-09 | Removal of stain on surface of inorganic compound epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2261084A JPS60167333A (en) | 1984-02-09 | 1984-02-09 | Removal of stain on surface of inorganic compound epitaxial wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60167333A JPS60167333A (en) | 1985-08-30 |
| JPH0412616B2 true JPH0412616B2 (en) | 1992-03-05 |
Family
ID=12087605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2261084A Granted JPS60167333A (en) | 1984-02-09 | 1984-02-09 | Removal of stain on surface of inorganic compound epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60167333A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752505A (en) * | 1987-01-13 | 1988-06-21 | Hewlett-Packard Company | Pre-metal deposition cleaning for bipolar semiconductors |
| CN103014875B (en) * | 2012-11-30 | 2015-10-21 | 甘肃虹光电子有限责任公司 | A kind for the treatment of process of synthetic sapphire wafer |
-
1984
- 1984-02-09 JP JP2261084A patent/JPS60167333A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60167333A (en) | 1985-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |