JPH04125917A - Manufacture and manufacturing equipment of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce dust generation occurring by rubbing between a wafer and a hot plate, and improve the quality and the yield of products, by heat- treating a semiconductor wafer by using a hot plate. CONSTITUTION:Three trenches 3 of a concentric circle type are formed on a heating surface 2 of a hot plate 1 of aluminum. After trenches are formed on the heating surface 2 by machining, the hot plate 1 is subjected to alumite treatment and heat resistant resin coating. As to sectional shape of the trench 3, width (w) is about 1mm, and the depth (h) is about 2mm. The aperture peripheral part 4 is beveled by R of 4mm. Thereby the contact area is made small, rubbing is reduced, and, at the same time, the thermal conduction efficiency from the hot plate to the wafer can be improved.

Description

[Detailed Description of the Invention] [Summary] The present invention relates to a semiconductor device manufacturing method and manufacturing equipment, in particular, to an improvement of a semiconductor wafer heat treatment method and a heat treatment equipment, and to minimize dust generation due to friction between a wafer and a hot plate. It is an object of the present invention to provide a method and apparatus for manufacturing a semiconductor device, which prevents product defects and the resulting reduction in product yield, and at the same time secures heat transfer efficiency from the hot plate to the wafer to minimize the length of heat treatment. According to the manufacturing method of the present invention, when a semiconductor wafer is held on a hot plate and subjected to heat treatment, a recess with a chamfered opening edge is provided on the wafer holding surface so that a large number of parts are in contact with the wafer. The manufacturing apparatus of the present invention is configured to use a hot plate, and in order to heat-process a semiconductor wafer by holding it on the hot plate, a recess with a chamfered opening edge is provided on the wafer holding surface to hold the wafer and a large number of parts. The hot plate is configured to have a hot plate that is brought into contact with the hot plate.

[Industrial application field]

The present invention relates to a method and apparatus for manufacturing a semiconductor device, and more particularly to an improvement in a method and apparatus for heat treatment of semiconductor wafers.

[Conventional technology]

In the manufacture of semiconductor devices, for example, a heat treatment at a temperature of about 150° C. or lower is performed to pre-bake or post-bake a semiconductor wafer after resist coating. Generally, such heat treatment is performed by holding the semiconductor wafer on a heated hot plate.

Conventionally, such heat treatment using a hot plate has been carried out by a full-surface contact method in which the entire back surface of the sea urchin fly 0 is held in contact with a hot plate 11 with a flat heating surface 12, as shown in FIGS. 4 (al) and (a2). Alternatively, as shown in (bl) and (b2) of the same figure, the back side of the wafer 1o is placed on the heads of several pins 13 set up on the hot plate heating surface 12, and the wafer back surface 14 is slightly raised from the hot plate heating surface 12. This was done using a pin contact method in which the pins were held at a distance (for example, about 0.1 inch) apart.

However, in the full-surface contact method, there is a problem in that dust is generated due to friction between the wafer 1o and the hot plate heating surface 12, which causes product defects in semiconductor devices and a decrease in yield.

On the other hand, the pin contact method has the disadvantage that heat treatment time is significantly longer due to poor heat transfer efficiency from the hot plate to the wafer. For example, as shown in Figure 5, the full-surface contact method shows temperature rise behavior as shown by curve A, while the pin contact method shows temperature rise behavior as shown in curve B, which requires a long time and the final temperature reached. is also slightly lower.

[Problem to be solved by the invention]

The present invention solves the above-mentioned conventional problems, minimizes dust generation due to friction between the wafer and the hot plate, prevents product defects and the resulting decrease in product yield, and at the same time prevents the generation of dust from rubbing between the hot plate and the wafer. Ensuring heat transfer efficiency,
It is an object of the present invention to provide a method and apparatus for manufacturing a semiconductor device that minimizes the length of heat treatment.

[Means to solve the problem]

According to the present invention, when a semiconductor wafer is held on a hot plate for heat treatment, a recess with a chamfered opening edge is provided on the wafer holding surface so that the wafer comes into contact with the wafer at a large number of parts. This is achieved by a method for manufacturing a semiconductor device, which is characterized by using a hot plate having a heat plate.

In the semiconductor device manufacturing apparatus of the present invention, in order to heat-treat the semiconductor wafer by holding it on a hot plate, a recess with a chamfered opening edge is provided on the wafer holding surface so as to contact the wafer at many parts. It is characterized by having a hot plate.

[Effect]

In the present invention, by holding and heating the wafer with a hot plate that has a recess with a chamfered opening edge on the wafer holding surface so that many parts of the wafer come into contact with the wafer, the contact between the wafer and the wafer is improved. The reduced area reduces friction to a minimum, while at the same time significantly increasing heat transfer efficiency compared to traditional pin contact systems.

The shape of the depression may be any shape as long as the edge opening to the hot plate heating surface is chamfered, such as a continuous groove shape, a discontinuous spot shape, or a combination thereof.

[Example 1] FIG. 1 shows an example of a hot plate provided with depressions according to the present invention.

Three concentric grooves 3 were provided on the heating surface 2 of the hot plate 1. The hot plate 1 is made of aluminum, and after grooves 3 are formed in the heating surface 2 by machining, the hot plate 1 is anodized and coated with a heat-resistant resin. As shown in the same figure (c), the cross-sectional shape of the groove 3 has a width w=1 mm and a depth h=
The opening edge 4 is chamfered with a radius of 1 square.

When the wafer 10 coated with the resist was placed on the heating surface 2 area provided with the grooves 3 of the hot plate 1 and subjected to L pre-bake and post-bake as shown in FIG. The time was not much different from that of the conventional full-surface contact method (the temperature increase behavior was almost similar to the temperature increase curve A in FIG. 5).

[Example 2] Instead of the grooves in Example 1, a large number of bottomed holes 3' as shown in FIG. 2 were provided in spots on the hot plate heating surface. The material of the hot plate 1 and the treatment of the heating surface are the same as those in Example 1. The cross-sectional shape of the 3° bottomed hole is shown in the same figure (b).
As shown in the figure, the diameter d is 1 mm, the depth h is 2 mm, and the opening edge 4 is chamfered with a radius of 1B.

The wafer 10 coated with resist was placed on the heating surface 2 region of the hot plate 1 with a bottomed hole of 3°, and pre-baking and post-baking were performed. The time was not much different from that of the conventional full-surface contact method, and the temperature increase behavior was almost similar to the temperature increase curve A in FIG. 5.

The shape of the depressions (3, 3") is not limited to those shown in the above embodiments, but may be continuous in a spiral, radial, or lattice shape as shown in FIGS. 3(a) to (C), or It is also possible to use an intermittent one.

〔Effect of the invention〕

As explained above, according to the present invention, when a semiconductor wafer is heat-treated using a hot plate in the manufacture of semiconductor devices, dust generation due to friction between the wafer and the hot plate is minimized, thereby preventing product defects and It is possible to prevent a decrease in product yield due to this, and at the same time ensure heat transfer efficiency from the hot plate to the wafer, thereby minimizing the lengthening of the heat treatment.

[Brief explanation of the drawing]

FIGS. 1(a) to (C) show an example of a hot plate in which recesses are provided as concentric grooves according to the present invention; (a) is a top view; Cross-sectional view, and (c)
FIGS. 2(a) and 2(b) are enlarged cross-sectional views of portion M in FIG.
Plan view and (b) vertical sectional view of the bottomed hole; FIGS. 3(a) to (c) are plan views showing other examples of the recess shape according to the present invention; FIGS. 4(al) and (a2). , (bl), and (b2)
are (al) a plan view and (a2) cross-sectional view showing a conventional hot plate of full-surface contact type, and (bl) a plan view and (b2) cross-sectional view of a conventional bottle contact type hot plate, respectively. FIG. 5 is a graph showing temperature rise curves for the conventional full surface contact method and the conventional pin contact method. 2: heating surface (wafer holding surface) of hot plate 1; 3: groove-shaped depression; 3': bottomed hole-shaped depression; 4: opening edge. (a) (b) (C) Diagram (a) (b) Diagram (a) (b) (C) Diagram (Ql) (bl) Cause diagram

Claims (1)

[Claims] 1. A hot plate in which a wafer holding surface is provided with a recess with a chamfered opening edge so that many parts of the semiconductor wafer come into contact with the wafer when the semiconductor wafer is held on the hot plate and subjected to heat treatment. 1. A method of manufacturing a semiconductor device, characterized by using. 2. In order to heat-process a semiconductor wafer by holding it on the hot plate, the hot plate is provided with a recess with a chamfered opening edge on the wafer holding surface so as to come into contact with the wafer at many parts. Manufacturing equipment for semiconductor devices.