JPH04125648A - Photosensitive resin - Google Patents

Abstract

PURPOSE:To obtain the photosensitiver resin having an excellent film thickness and resolving power by using a polysiloxane deriv. having one kind among an unsatd. group alkyl group and alkyl halide group or a plurality thereof and an alkyl halide arom. substituent as the essential component to constitute this resin. CONSTITUTION:This photosensitive resin is constituted by using the polysiloxane deriv. having one kind among the unsatd. group, alkyl group and alkyl halide group or a plurality thereof and the alkyl halide arom. substituent as the essential component. Then, the alkyl halide arom. substituent has the high sensitivity to the photoirradiation of the prescribed wavelength region meeting its structure and the high resolution arising from the chemical structure of the resin contg. the polysiloxane deriv. is obtd. Since the silicon content thereof is high, high O2-RIE resistance is obtd. The photosensitive resin having the excellent film thickness and working accuracy is obtd. in this way.

Description

Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a photosensitive resin used as a resist material in the manufacture of semiconductor devices, particularly in substrate processing such as element formation and wiring pattern formation. .

(Prior art) Substrate processing in the manufacture of semiconductor devices, such as the formation of metal wiring patterns in ICs, involves forming a wiring metal film over the entire surface of the substrate to be processed, and then forming a resist film on the wiring metal film. After that, this resist film is patterned by exposure using, for example, a reduction projection exposure device to form a resist pattern, the metal film for wiring is etched using the resist pattern as a mask, and then the resist pattern is removed. It is done by doing.

However, in recent years, as ICs have become more highly integrated and faster, wiring patterns have become ultra-fine and multilayer wiring has been adopted.

It is thought that the miniaturization of wiring patterns will progress further in the future.

On the other hand, to reduce wiring resistance, aspect ratio (vertical to horizontal ratio)
There is a tendency to increase the height of the wiring, and the height difference on the substrate to be processed becomes significantly large due to multilayer wiring. When forming a resist pattern on a substrate to be processed having such a large step difference, the following problem occurs.

That is, when forming a resist pattern using, for example, a reduction projection exposure apparatus, it becomes difficult to form a resist pattern of a desired size with high precision on a workpiece substrate with steps within the range of the allowable depth of focus. . In particular, when performing fine patterning in the sub-micron region, increasing the numerical aperture of the lens attached to the reduction projection exposure system to obtain high resolution results in a shallow depth of focus, making it difficult to create only one layer of resist as in the past. In this case, there is a possibility that a pattern cannot be formed.

In order to solve the above-mentioned difficulties, for example, the literature rJo
urnal of electrochemical
5ocity:5OLIDSTATE 5CIE
NCE AND TECHNOLOGYJ, 1B
2 [5] (1985) P.

1178-1182 has been proposed.

The technology described in the above document uses a positive photosensitive resin sensitive to far ultraviolet rays (wavelength range of approximately 200 to 300 nm) in addition to a resist pattern forming technology called the two-layer resist method. It is.

Hereinafter, the formation of a metal wiring pattern by the two-layer resist method using a photosensitive resin described in the above-mentioned document will be specifically explained.

First, a thermosetting resin is thickly spin-coated onto a substrate to be processed, on which a base metal layer has been deposited and the surface has a step difference, and the thermosetting resin is thermally cured to form a flat surface on the substrate to be processed. A lower resist layer is formed to planarize the substrate.

Thereafter, a photosensitive resin having high resistance to etching by oxygen plasma is coated extremely thinly on the lower resist layer to form an upper resist layer, and the upper resist layer is patterned by exposure.

Here, the photosensitive resin forming the upper resist layer has a sensitivity of about 250 mJ/cm2 (1
0.75 μm
A poly(trimethylsilylmethyl methacrylate-3-oximino-2-butanone methacrylate) copolymer that can obtain a certain level of resolution and has etching resistance because it contains silicon and reacts with oxygen plasma during etching. Use coalescence.

Next, using the patterned upper resist layer as a mask, ion etching (02-
If the lower resist layer is etched by RIE),
A high aspect ratio two-layer resist pattern consisting of a patterned lower resist layer and an upper resist layer is formed. Thereafter, by etching the base metal layer on the substrate to be processed using this two-layer resist pattern as a mask, a desired wiring pattern can be obtained.

In forming wiring patterns using the conventional two-layer resist method using photosensitive resin, a thick flattening layer is formed with a lower resist layer made of thermosetting resin, and an upper resist layer made of photosensitive resin is formed on top of that. Then, the upper resist layer having a flat surface is patterned by 02-RIE. Therefore, the upper resist layer and the lower resist layer can be patterned without being affected by the step of the underlying substrate to be processed. Further, even if the depth of focus becomes shallow in order to obtain resolution, the wiring pattern can be made finer by reducing the thickness of the upper resist layer.

Therefore, a fine pattern with a high aspect ratio can be formed without dimensional variation.

(Problems to be Solved by the Invention) However, the photosensitive resin having the above structure has the following problems.

The conventional photosensitive resin described in the above literature has a relatively low silicon content of 9.6% by weight, so the etching rate by 02-RIE is as fast as 15 nm/min, and the 02-R
IE resistance is low.

Therefore, when this photosensitive resin is used, for example, as the upper resist layer in a two-layer resist method, if the thickness of the upper resist layer is made thinner in order to obtain resolution, the patterning of the lower resist layer cannot be performed with high accuracy, resulting in a two-layer resist method. Not only is it not possible to form a pattern accurately, but the lower resist layer needs to be thicker to planarize the substrate to be processed, but if the thickness is increased, the upper resist layer will no longer function as a mask. I end up not being able to fulfill my goals.

Further, although conventional photosensitive resins have a resolving power of about 0.75 μm due to their chemical structure, etc., this cannot necessarily be said to be a sufficient resolving power in consideration of the trend toward miniaturization of wiring patterns.

The present invention provides a photosensitive resin that solves the problems of low 02-RIE resistance and insufficient resolution due to low silicon content.

(Means for Solving the Problems) In order to solve the above problems, the first invention provides a photosensitive resin with one or more of unsaturated groups, alkyl groups, and halogenated alkyl groups, and a halogenated resin. The main component is a polysiloxane derivative having an alkyl aromatic substituent. This photosensitive resin has both terminals of a polysiloxane derivative having one or more of unsaturated groups, alkyl groups, and halogenated alkyl groups as a functional group, and has wavelengths in the deep ultraviolet region and its vicinity ( For example, it has photosensitivity due to its large absorption of light at a predetermined wavelength (region) according to its structure at about 200 to 400 nm, and is modified with an aromatic compound substituent having a halogenated alkyl group. be.

In a second invention, in the first invention, the photosensitive resin is a compound represented by the following structural formula (1) or (2),
It is composed of a copolymer or a mixture thereof.

R11=O-8i-〇-R12 22m R31-! -○-8i-〇-R32 R33-1o-ri J-0-R34 R42' n However, in the formula, R21, R22, R41 and R42 represent an unsaturated group, a lower alkyl group or a halogenated alkyl group, They may be the same or different. R
11, R12, R31, R32, R33 and R34 are
They are halogenated alkyl aromatic substituents and may be the same or different from each other. Moreover, m and n represent positive integers.

This photosensitive resin is synthesized by, for example, reacting a polysiloxane derivative having a terminal OH group with a halogenated alkyl aromatic compound. Compounds represented by W4 formulas (5) and (6) are used.

However, in the formula, R21, R22, R41 and R42 represent an unsaturated group, a lower alkyl group, or a halogenated or alkyl group, and may be the same or different groups. Also,
m and n represent positive integers.

The polysiloxane derivative represented by the formula (6) was developed by the inventors of this application in Japanese Patent Application Laid-Open No. 63-21083.
The polysiloxane derivative represented by formula (5), which is a compound proposed in Publication No. 9, is also disclosed in the above-mentioned JP-A-6
This can be easily obtained by replacing trichlorosilane, the raw material used in the technique proposed in Japanese Patent No. 3-210839, with dichlorosilane. These ho.

Resiloxane derivatives have a weight average molecular weight of 1 depending on the polymerization conditions.
can be obtained with good controllability up to about 2,000 to 100,000.

In the third, fourth and fifth inventions, in the first or second invention, the unsaturated group, the alkyl group and the halogenated alkyl group, as for the unsaturated group, a vinyl group, an allyl group,
An alkenyl group selected from impropenyl group and 2-butenyl group, and for alkyl groups, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, and t-butyl group. 4 carbon atoms selected from the group
The following alkyl groups, and halogenated alkyl groups, are selected from chloro (bromo, iodo) methyl (ethyl, propyl, butyl) groups, and have 4 or less carbon atoms and are substituted with one or more chlorine, bromine, or iodine. is a halogenated alkyl group. However, this excludes the case where all the functional groups are alkyl groups and the alkyl groups are composed only of t-butyl groups.

A sixth invention is the first or second invention, wherein the halogenated alkyl aromatic substituent is represented by the following formulas (3) and (4).
) is selected from the groups shown in .

Ar-C-R52-(3) R61-Ar-C-C-R62-(4) However, in the formula, at least one of R51, R52 and R53 is a halogen, the others are hydrogen, and R54
, R55 and R56, at least one is halogen, and the others are hydrogen.

Ar is a monocyclic or polycyclic aromatic substituent, such as a phenyl group, a phenyl group derivative, a naphthyl group, a naphthyl group derivative, an anthracenyl group, an anthracenyl group derivative,
It is selected from heterocyclic compounds similar to these and derivatives of the heterocyclic compounds.

A seventh invention is that in the first or second invention, the starting material (starting material) for obtaining the polysiloxane derivative is a polysiloxane derivative having a terminal OH group and having a weight average molecular weight of 2000 or more and 1ooooo or less. It is.

(Function) According to the first invention, since the photosensitive resin is constructed as described above, when a polysiloxane derivative having terminal OH groups is used as a resist resin, storage stability is taken into consideration. It is common knowledge to protect the OH group with an inert group such as a trimethylsilyl group, but in the photosensitive resin of the present invention, the terminal OH group is modified with a halogenated alkyl aromatic substituent.

When this photosensitive resin is used as a resist, the photosensitive resin is exposed using light having a light absorption wavelength corresponding to the structure of the halogenated alkyl aromatic substituent in the deep ultraviolet region and a wavelength region in the vicinity thereof. When the resin is irradiated with light, the halogenated alkyl aromatic substituent generates active species such as halogen radicals and carbon radicals, and these active species add to the unsaturated groups of the polysiloxane derivative. Alternatively, polymerization proceeds by abstracting hydrogen from alkyl groups or halogen from halogenated alkyl groups,
That part becomes insoluble in organic solvents. Based on the above process, this photosensitive resin functions as a negative resist.

According to the second invention, since the polysiloxane derivative in the first invention is constructed using the compounds represented by the structural formulas (1) and (2>, the polysiloxane derivative has 02-RIE resistance. The defined silicon content is high and, due to its molecular structure, the synthesis process from the starting materials can be easily controlled.

According to the third, fourth, and fifth inventions, in the first or second invention, since the unsaturated group, the alkyl group, and the halogenated alkyl group are configured as described above, the first or second invention
In addition to obtaining the same effect as the invention described above, the molecular weight of the functional group is reduced without impairing the reactivity toward active species such as halogen radicals and carbon radicals, and the silicon content of the photosensitive resin is promoted.

According to the sixth invention, in the first or second invention,
The halogenated alkyl aromatic substituent is represented by (3) and (
4) Since it is selected from the monofunctional groups represented by the formula, active species such as halogen radicals and carbon radicals can be efficiently generated upon light irradiation due to its molecular structure.

According to the seventh invention, in the first or second invention,
The starting material for obtaining the polysiloxane derivative has a weight average molecular weight of 2,000 or more and 100,000 or less.
Since the H-group polysiloxane derivative is used, the optimum molecular weight of the starting material for the polysiloxane derivative can be set.

That is, if the molecular weight of the starting material polysiloxane derivative with a terminal OH group is less than 2000, the polysiloxane derivative will not crystallize, making it unsuitable as a resist film, and requiring an extremely large amount of exposure I during patterning. Requires.

Furthermore, if the molecular weight is greater than 100,000, gelation tends to occur during the synthesis stage, making it impossible to obtain sufficient reproducibility. Therefore, when obtaining the polysiloxane derivative using a polysiloxane derivative having terminal OH groups as a starting material, it is desirable to set the weight average molecular weight within the range of 2,000 to 100,000.

In the synthesis of a photosensitive resin using a starting material whose molecular weight has been set in this way, for example, a -functional halogenated alkyl aromatic compound (e.g., a modichloride compound) is added to the starting material, a polysiloxane derivative with a terminal OH group, as a base. The reaction is carried out under a neutral catalyst. This basic catalyst was not identified;
For example, l-ethylamine, tri-n-butylamine,
Examples include pyridine, lutidine, γ-collidine, imidazole, and potassium carbonate, and the amount thereof may be within a range of, for example, an equivalent amount to 10 times the amount of the halogenated alkyl aromatic substituent.

In addition, the solvents used in the synthesis include dimethylformamide, tetrahydrofuran, dimethyl sulfoxide, 1.
Examples include 4-dioxane, methylethyltetone, methylisobutylketone, and toluene.

Here, the amount of the halogenated alkyl aromatic substituent used in the synthesis is sufficient as long as it has a molecular weight equal to or more than the number of ○H groups in the polymer, and varies depending on the number average molecular weight, for example, 3 to 50.
It does not matter as long as it is within the range of moj%.

Therefore, the above problem can be solved.

(Examples) Hereinafter, the present invention will be specifically explained using Examples 1 to 17, but the present invention is not limited to the following Examples unless the gist thereof is exceeded.

Criminal investigation 1 Weight average molecular weight MW = 31000, number average molecular weight Mn =
Polyarylsilsesquioxane with 10,000 terminal OH groups (polysiloxane derivative as starting material > 93.2
g (1,0 mo, Q ) and 12.0 g (74,6 mmoΩ) of 4-chloropencitrichloride (halogenated alkyl aromatic compound) represented by the following structural formula (7)
are dissolved in 1.01 dichloromethane (solvent during synthesis) and stirred in a water bath.

C, Il = @-CH2Cρ To this, 10.3 g of potassium carbonate (catalyst) <74.6
mmo, Q) dropwise and then continue stirring for 15 minutes. Further, the bath was removed and stirring was continued for 6.5 hours at room temperature. After stirring, dilute with a suitable solvent that can be distilled off,
Insoluble matter is filtered, the solvent is distilled off, and the operations of dilution, filtration, and distillation are repeated until no insoluble matter is generated. The oil subsequently obtained 89.4. was diluted with the same amount of toluene and dropped into 4.3 g of methanol to form colorless crystals (
>71.5 g of polymer was obtained.

In Example 1, the starting materials, polysiloxane derivatives, were as shown in Table 1-1.1-2, the halogenated alkyl aromatic compounds were as shown in Table 2, and the catalyst and synthesis time were as follows: In each of Examples 2 to 7, the solvents were changed as shown in Table 3 below, and all other conditions were the same, polymers with yields shown in Table 3 were obtained.

Table 1-1 Example polysiloxane derivative (starting material) Hn=10000 Polymethylsiloxane Hn=17000 Mn=12000 Table 1-2 Example polysiloxane derivative (starting material) Polyallyl/chloromethylsilsesquioxane 50:5
0 (Copolymer) Hn = 9800 Hw = 28000.97.4g (1mON 'r Polychloromethylsilsesquioxane f4n = 29000 Mw = 9500.101.6t (1mon! Polyallylsilsesquioxane Hn = 10000 Hw =31000.46.6g (50mof%) Polymethylchlorosilsesquioxane...(1mol) Table 2 2-tribromomethyl-6, chloroquinaldine 2-bromoacetyl, 4-bromonaphthalene 19,9< ( 79
,5mmoj) Bromophenacyl bromide 11.8g (42.8mmoN) 20,5t (74゜2mmofi) Table 3 In addition, 1,4-bis(dibromomethyl) of the halogenated alkyl aromatic compound shown in Table 2 above 2-chlorobenzene, 2-tribromomethyl 6-chloroquinal resin, 1-bromomethyl-4nitro-5-lylolobenzene, 2-bromoacetyl-4-bromonaphthalene, p-bromophenacyl bromide, 1-bromomethyl Acetyl-4-
Rirowa 5-methoxybenzene is each expressed by the following formula (8)%
Formula % (13) 100 g of the polymer obtained in Example 1 was added to 730 g of xylene.
Dissolve in g, filter through a 0.2 μm μm cymembrane filter, and adjust the resist.

Furthermore, a photoresist (MP2400 manufactured by Shipley) was spin-coated on the silicon substrate, and the photoresist was heated in an oven at 200°C for 1 hour to harden it, forming a lower resist layer with a thickness of 1.5 μm. did.

On this lower resist layer, the adjusted resist is applied to a film thickness of 0,
Spin coating to a thickness of 2 μm and heat at 80°C in a hot plate.
Edgeing was performed for 1 minute to form an upper resist layer. After producing a wafer in which a lower resist layer and an upper resist layer were sequentially formed on a silicon substrate in this way, the upper resist layer was coated with a PLA501 aligner (Canon) equipped with a Xe-Hg lamp and a cold mirror. Contact exposure with a mask was carried out using a light source (manufactured by Co., Ltd.) as an exposure source.

Next, this wafer was coated with methyl isobutyl ketone (hereinafter referred to as
MIBK) and inpropyl alcohol (hereinafter referred to as I
The wafer was developed by immersing it in a 1:1 mixture (referred to as PA) for 45 seconds, then rinsing by immersing it in IPA for 30 seconds, and then placed the wafer at 60° on a hot plate.
C Beta was performed for 11 minutes.

In the above process, when the upper resist layer made of the adjusted resist was exposed to light, the exposure amount (Dn0°5) when 50% film remained was 4.3 ct (count). 1ct=39.0mJ/cm2. In addition, the minimum resolution dimension is 0.5μmL/the minimum dimension of the mask.
It was S.

From this result, the resist adjusted using the polymer prepared in Example 1 has a minimum resolution of 0.75 μm compared to the conventional one.
Can be smaller than L/S, at least 0.5μm
It can be seen that resolution up to L/S can be obtained. Also, 5
The exposure amount at 0% remaining film was also 175.5 mJ/cm.
It can be seen that the value is about 2, which is lower than the conventional value of 250 mJ/cm2.

In Inuse Hiro Uninu Example 8, the resists prepared using the polymers obtained in Examples 2 to 7 were used in the combinations shown in Table 4 below, and all other Examples 9 to 9 were carried out in the same manner. 14, the exposure amount (Dn
0.5) and the minimum resolution dimension were as shown in Table 4 below.

Table 4 Comparing Examples 9 to 14 and Example 8, the exposure amount when 50% film remains is Example 8.14.10.1
2.9.13.11, and the minimum resolution size is 0, 5, which is the minimum mask size of the mask used in each example.
It can be seen that up to μmL/S can be obtained.

EXAMPLE 8 All procedures were carried out in the same manner as in Example 8, except that the exposure source was a KrF excilier laser (manufactured by Lambda Physics).

At this time, the exposure amount when 50% film remained was 0.5° (Dn > 150 mJ/cm''), and resolution was possible at least to 0.5 μmL/S, which is the minimum dimension of the mask.

As can be seen from this result, when a KrF excimer laser is used as the exposure source, both the exposure amount and the resolution when 50% film remains are improved compared to the conventional method.

A dry film with a thickness of 0.2 μm was formed on a silicon wafer using the resist prepared in Example 8, and then using a DEM451 parallel plate trietcher (manufactured by Anelva), Dry etching with 02 gas (02-R) was performed on the dry film formed on the silicon wafer.
IE) was performed for 20 minutes. The etching conditions at that time were
02 gas pressure 1. ○Pa, 02 gas flow rate 20SCCM
, the RF power density is 0.12 W/cm2.

After this etching is completed, measure the amount of film loss in the dry film using a film thickness meter (
When measured with Talystep (manufactured by Taylor Hobson), it was 47 nm.

According to the measurement results, the etching rate of 02-RIE for the dry film formed using the resist prepared in Example 8 was 2.35 nm/min, compared to the conventional etching rate of 15 nm/min.
It can be seen that the speed is slower than m/min.

Example 8 A lower resist layer consisting of a heat-cured photoresist (MP2400 manufactured by Shipley) with a film thickness of 2 μm was formed on the silicon substrate, and on the lower resist layer,
The resist prepared in step 1 was spin-coated and subjected to beta testing at 60° C. for 1 minute on a hot plate to form an upper resist layer with a thickness of 0.2 μm. After producing a wafer in which a lower resist layer and an upper resist layer are sequentially formed on a silicon substrate in this way, in order to pattern the upper resist layer, the upper resist layer of this wafer is first exposed to a Xe-Hg lamp. Contact exposure was performed using a CM250 cold mirror. The exposure amount at this time was 5.2ct.

After exposure, this wafer was mixed with MIBK + IPA=1:1
After being immersed in a mixed solution for 45 seconds and further immersed in IPA for 30 seconds, it was baked on a hot plate at 80° C. for 1 minute to complete the patterning of the upper resist layer.

Next, using the patterned upper resist layer as a mask, 02-RIE was performed on the lower resist layer for 35 minutes using a dry etcher DEM451. The etching conditions at that time were O2 gas pressure of 1, 'Opa
, 02 gas flow rate is 20SCCM, RF power density is 0
．． It was set to 12W/cm2.

Cross-sectional SEM (
As a result of observation with a scanning electron microscope), 0.5 μmL
It was found that /S was formed in a rectangular shape with an aspect ratio of 4.

As can be seen from the observation results, the two-layer resist pattern formed by the two-layer resist method using the resist adjusted in Example 8 was patterned with high resolution and formed with high precision and high aspect ratio.

(Effects of the Invention) As explained in detail above, according to the first invention, the photosensitive resin is formed using a polysiloxane derivative (including a polysilsesquioxane derivative) having a high silicon content as a starting material. It has one or more groups selected from unsaturated groups, alkyl groups, and halogenated alkyl groups as a functional group, and contains active species such as halogen radicals and carbon radicals that are highly reactive with this functional group. The main component is a polysiloxane derivative having an efficiently generated halogenated alkyl aromatic W substituent. Therefore, the halogenated alkyl aromatic substituent has a high aversion to light irradiation in a predetermined wavelength region depending on its structure, and high resolution can be achieved due to the chemical structure of the resin containing the polysiloxane derivative. and its high silicon content provides high 02-RIE resistance.

Therefore, a photosensitive resin with excellent film thickness and processing accuracy can be realized.

In addition, according to the photosensitive resin of the present invention, the light absorption wavelength can be changed over a wide range of wavelengths from about 200 to 400 nm by appropriately selecting the structure of the halogenated alkyl aromatic substituent. For excimer laser, Kr
It is possible to configure the resists 1 for F excimer lasers, for ArF excimer lasers, and the like.

According to the second invention, in the first invention, the polysiloxane derivative is composed of the compounds represented by the formulas (1) and (2), and therefore, due to its chemical structure, the polysiloxane derivative is Controllability is obtained, and a polysiloxane derivative having a desired molecular weight can be obtained with high precision.

Furthermore, according to the invention, the structure of the polysiloxane derivative itself can be made to increase the silicon content of the photosensitive resin as much as possible, and based on this, the
2-Can promote improvement in RIE resistance.

According to the third, fourth, and fifth inventions, in the first or second invention, since the unsaturated group, the alkyl group, and the halogenated alkyl group are constituted as described above, the structure of the functional group itself is , the silicon content of the photosensitive resin can be increased as much as possible without impairing the reactivity to radicals generated by a single halogenated alkyl aromatic substituent, and the O2-RIE resistance of the photosensitive resin can be increased as much as possible. It becomes possible to achieve optimization.

According to the sixth invention, in the first or second invention,
Since the halogenated alkyl aromatic substituent is selected from the groups represented by formulas (3) and (4),
In the halogenated alkyl aromatic substituent, active species such as halogen radicals and carbon radicals can be efficiently generated, and the anger degree of the photosensitive resin can be increased.

Further, according to the present invention, the structure of the halogenated alkyl aromatic substituent itself can be made to increase the silicon content of the photosensitive resin as much as possible, and based on this, the 02 to RIE It also has the effect of improving resistance.

According to the seventh invention, in the first or second invention,
The starting material for obtaining the polysiloxane derivative has a weight average molecular weight of 2000 or more and 10oooo or less.
Since the 1-1 polysiloxane derivative is used, it is possible to realize a photosensitive resin that has a suitable resist function and has excellent reproducibility.

Claims (1)

[Scope of Claims] 1. A photosensitive material containing a polysiloxane derivative having one or more of an unsaturated group, an alkyl group, and a halogenated alkyl group, and a halogenated alkyl aromatic substituent. sex resin. 2. The photosensitive resin according to claim 1, wherein the polysiloxane derivative is a compound represented by the following structural formula (1) or (2), or a compound represented by the following structural formula (1) or (2).
A copolymer of the compound represented by or the following structural formula (1
) and (2). ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(2) (In the formula, R21, R22, R41, and R42 are unsaturated groups, lower alkyl groups, or halogens. represents an alkyl group, which may be the same or different from each other.R11
, R12, R31, R32, R33 and R34 are halogenated alkyl aromatic substituents, and may be the same or different from each other. Moreover, m and n represent positive integers. ) 3. The photosensitive resin according to claim 1 or 2, wherein the unsaturated group is a vinyl group (CH_2=CH-), an allyl group (CH_2=CH-CH_2-), an isopropenyl group (CH_2=C-CH_3 ) and 2-butenyl group (C
A photosensitive resin selected from H_2=CH-CH_2-CH_2-). 4. The photosensitive resin according to claim 1 or 2, wherein the alkyl group is a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, or a t-butyl group. Photosensitive resin selected from 5. The photosensitive resin according to claim 1 or 2, wherein the halogenated alkyl group is selected from chloro(bromo, iodo)methyl (ethyl, propyl, butyl) groups (the number of halogens is 1 or more and 9 or less). sex resin. 6. The photosensitive resin according to claim 1 or 2, wherein the halogenated alkyl aromatic substituent has the following structural formula (
A photosensitive resin selected from the groups shown in 3) and (4). ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(3) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(4) (In the formula, at least one of R51, R52, and R53 is a halogen, and other is hydrogen, R61, R
Regarding 62 and R63, at least one is halogen, and the others are hydrogen. Ar is a monocyclic or polycyclic aromatic substituent, and includes phenyl groups, phenyl group derivatives, naphthyl groups, naphthyl group derivatives, anthracenyl groups, anthracenyl group derivatives, heterocyclic compounds similar thereto, and It is selected from derivatives of heterocyclic compounds. ) 7. The photosensitive resin according to claim 1 or 2, wherein the starting material for obtaining the polysiloxane derivative is a terminal O having a weight average molecular weight of 2,000 or more and 100,000 or less.
A photosensitive resin made from a polysiloxane derivative with H groups.