JPH04125647A - Photosensitive resin - Google Patents

Abstract

PURPOSE:To obtain the photosensitive resin having an excellent film thickness and resolving power by using a polysiloxane deriv. having one kind among an unsatd. group, alkyl group and alkyl halide group or a plurality thereof and an arom. compd. substituent having a hetero atom-hetero atom bond as the essential component to constitute this resin. CONSTITUTION:This photosensitive resin is constituted by using the polysiloxane deriv. having one kind among the unsatd. group, alkyl group and alkyl halide group or a plurality thereof and the arom. compd. substituent having the hetero atom-hetero atom bond as the essential component. Then, the arom. compd. substituent has the high sensitivity to the photoirradiation of the prescribed wavelength region meeting its structure and the high resolution arising from the chemical structure of the resin contg. the polysiloxane deriv. is obtd. Since the silicon content thereof is high, high O2-RIE resistance is obtd. The photosensitive resin having the excellent film thickness and working accuracy is obtd. in this way.

Description

Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a photosensitive resin used as a resist material in the manufacture of semiconductor devices, particularly in substrate processing such as element formation and wiring pattern formation. .

(Prior art) Substrate processing in the manufacture of semiconductor devices, such as the formation of metal wiring patterns in ICs, involves forming a metal film for wiring on the entire surface of the substrate to be processed, and then forming a resist film on the metal film for wiring. After that, this resist film is patterned by exposure using, for example, a reduction projection exposure device to form a resist pattern, the metal film for wiring is etched using the resist pattern as a mask, and then the resist pattern is removed. It is done by doing.

However, in recent years, as ICs have become more highly integrated and faster, wiring patterns have become ultra-fine and multilayer wiring has been adopted.

It is thought that the miniaturization of wiring patterns will progress further in the future.

On the other hand, to reduce wiring resistance, aspect ratio (vertical to horizontal ratio)
There is a tendency to increase the height of the wiring, and the height difference on the substrate to be processed becomes significantly larger due to multilayer wiring. When forming a resist pattern on a substrate to be processed having such a large step difference, the following problem occurs.

That is, when forming a resist pattern using, for example, a reduction projection exposure apparatus, it becomes difficult to form a resist pattern of a desired size with high precision on a workpiece substrate with steps within the range of the allowable depth of focus. . In particular, when performing fine patterning in the submicron region, increasing the numerical aperture of the lens attached to the reduction projection exposure system in order to obtain high resolution results in a shallow depth of focus, making it difficult to create only one layer of resist as in the past. In this case, there is a possibility that a pattern cannot be formed.

In order to solve the above-mentioned difficulties, for example, the literature 'Jo
urnal of electrochemical
5ocity:5OLIDSTATE 5CI
ENCE AND TECHNOLOGY”, 1)
2 iIz] (1985) P1178-4182 has been proposed.

The technology described in the above document uses a positive photosensitive resin sensitive to far ultraviolet rays (wavelength range of approximately 200 to 300 nm) in addition to a resist pattern forming technology called the two-layer resist method. It is.

Hereinafter, the formation of a metal wiring pattern by the two-layer resist method using a photosensitive resin described in the above-mentioned document will be specifically explained.

First, a thermosetting resin is thickly spin-coated onto a substrate to be processed, on which a base metal layer has been deposited and the surface has a step difference, and the thermosetting resin is thermally cured to form a flat surface on the substrate to be processed. A lower resist layer is formed to planarize the substrate.

Thereafter, a photosensitive resin having high resistance to etching by oxygen plasma is coated extremely thinly on the lower resist layer to form an upper resist layer, and the upper resist layer is patterned by exposure.

Here, the photosensitive resin forming the upper resist layer has a sensitivity of about 250 mJ/cm'' (1
0.75 μm
A poly(trimethylsilylmethyl methacrylate-3-oximino-2-butanone methacrylate) copolymer that can obtain a certain level of resolution and has etching resistance because it contains silicon and reacts with oxygen plasma during etching. Use coalescence.

Next, using the patterned upper resist layer as a mask, ion etching (O2-
If the lower resist layer is etched by RIE),
A high aspect ratio two-layer resist pattern consisting of a patterned lower resist layer and an upper resist layer is formed. Then, using this two-layer resist pattern as a mask, the underlying metal layer on the substrate to be processed is etched.
A desired wiring pattern can be obtained.

In forming wiring patterns using the conventional two-layer resist method using photosensitive resin, a thick flattening layer is formed with a lower resist layer made of thermosetting resin, and an upper resist layer made of photosensitive resin is formed on top of that. Then, the upper resist layer having a flat surface is patterned by 02-RIE. Therefore, patterning of the upper resist layer and the lower resist layer can be performed without being affected by the difference in level of the underlying substrate to be processed. Further, even if the depth of focus becomes shallow in order to obtain resolution, the wiring pattern can be made finer by reducing the thickness of the upper resist layer.

Therefore, a fine pattern with a high aspect ratio can be formed without dimensional variation.

(Problems to be Solved by the Invention) However, the photosensitive resin having the above structure has the following problems.

The conventional photosensitive resin described in the above literature has a relatively low silicon content of 9.6% by weight, so the etching rate by 02-RIE is as fast as 15 nm/min, and the 02-R
IE resistance is low.

Therefore, when this photosensitive resin is used for the upper resist layer in a two-layer resist method, for example, if the thickness of the upper resist layer is made thinner in order to obtain resolution, the patterning of the lower resist layer cannot be performed with high precision, and the two-layer resist Not only is it not possible to form a pattern accurately, but the lower resist layer needs to be thicker to planarize the substrate to be processed, but if the thickness is increased, the upper resist layer will no longer function as a mask. I end up not being able to fulfill my goals.

Further, although conventional photosensitive resins have a resolving power of about 0.75 μm due to their chemical structure, etc., this cannot necessarily be said to be a sufficient resolving power in consideration of the trend toward miniaturization of wiring patterns.

The present invention provides a photosensitive resin that solves the problems of low 02-RIE resistance due to low silicon content and insufficient resolution.

(Means for Solving the Problems) In order to solve the above problems, the first invention includes a method of combining a photosensitive resin with one or more of unsaturated groups, alkyl groups, and halogenated alkyl groups, and a hetero atom. - An aromatic compound substituent having a heteroatom bond. This photosensitive resin has both terminals of a polysiloxane derivative having one or more of unsaturated groups, alkyl groups, and halogenated alkyl groups as a functional group, and has wavelengths in the deep ultraviolet region and its vicinity ( For example, about 200 to 400
It has photosensitivity due to its large absorption of light in a predetermined wavelength (region) according to its structure in nanometers), and is modified by an aromatic compound substituent having a heteroatom--heteroatom bond. .

A second invention is based on the first invention, in which the polysiloxane derivative is represented by the following structural formula (1) or (2) (composed of a compound, a copolymer thereof, or a mixture thereof). It is.

□ Rl 1 i 0 S 1 +OR12[: R22' m R31 ○-8ii○-R32 R33〒〇-3i-〇-R34 42in However, in the formula, R21, R22, R41 and R42 are unsaturated groups, lower It represents an alkyl group or a halogenated alkyl group, and may be the same or different.

R'll, R12, R31, R32, R33 and R34
are aromatic compound substituents having a heteroatom-heteroatom bond, and may be the same or different. Further, ITI,n represents a positive integer.

This photosensitive resin is formed by, for example, reacting a polysiloxane derivative with a terminal OH group with an aromatic compound having a heteroatom--heteroatom bond. For example, compounds represented by the following general structural formulas (4) and (c) are used.

H-0-3i20H...(4) R22' m However, in the formula, R22, R23, R41 and R42 represent an unsaturated group, a lower alkyl group or a halogenated alkyl group, and may be the same group. May be a different base, also m
, n represent positive integers.

The polysiloxane derivative represented by the formula (2) was disclosed in Japanese Patent Application Laid-Open No. 63210839 by the inventors of this application.
The polysiloxane derivative represented by the formula (4), which is a compound proposed in the above-mentioned Japanese Patent Application Laid-open No. 63
Trick 07 of the raw materials used in the technology proposed in the -210839 publication! It can be easily obtained by using dichlorosilane as the silane. These polysiloxane derivatives can have weight average molecular weights of about 2,000 to 100,000 with good controllability depending on the polymerization conditions.

In the third, fourth and fifth inventions, in the first or second invention, the unsaturated group, the alkyl group and the halogenated alkyl group, as for the unsaturated group, a vinyl group, an allyl group,
An alkenyl group selected from impropenyl group and 2-butenyl group, and for alkyl groups, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, and t-butyl group. carbon number 4 selected from the group
The following alkyl groups, and the halogenated alkyl groups are selected from 4-fold (bromo, iodo) methyl (ethyl, propyl, butyl) groups, and the number of carbon atoms substituted with one or more chlorine, bromine or iodine. It is a halogenated alkyl group of 4 or less. However, this excludes the case where all the functional groups are alkyl groups and the alkyl groups are composed only of t-butyl groups.

A sixth invention is that in the first or second invention, the aromatic compound substituent is a compound represented by the following structural formula (3).

-Ar1-Y-Y-Ar2- (3) However, in the formula, Y represents a -heteroatom and are the same. A
rl and Ar2 are monocyclic or polycyclic aromatic substituents, such as a phenyl group, a phenyl group having a substituent, a naphthyl group, a naphthyl group having a substituent, a biphenyl group, a biphenyl group having a substituent, or a combination thereof. They are similar compounds and may be the same or different.

The aromatic compound substituent represented by the formula (3) has the property that the aromatic ring has large absorption in the deep ultraviolet region and the wavelength region in its vicinity, and the aromatic ring has a heteroatom-heteroatom bond at the adjacent position. It has the property of being easily activated and cleaved by

A seventh invention is that in the first or second invention, the starting material (starting material) for obtaining the polysiloxane derivative is a polysiloxane derivative having a terminal OH group and having a weight average molecular weight of 2,000 or more and 100,000 or less. It is.

(Function) According to the first invention, since the photosensitive resin is constituted as described above, when a polysiloxane derivative having terminal OH groups is used as a resist resin, storage stability is taken into consideration. It is common knowledge that the OH group is protected with an inert group such as a trimethylsilyl group, but in the photosensitive resin of the present invention, the terminal OH group is -heteroatom-
- Modified by an aromatic substituent having a heteroatom bond.

When this photosensitive resin is used as a resist, the photosensitive resin ( On the other hand, when light is irradiated, the aromatic ring of the substituent of an aromatic compound absorbs energy, and the energy absorbed by the aromatic ring breaks the heteroatom-heteroatom bond, causing this aromatic The group compound substituent acts as a radical generation source and generates a heteroatom radical.This -heteroatom radical adds to the unsaturated group of the polysiloxane derivative or abstracts hydrogen from an alkyl group or halogen from a halogenated alkyl group. As a result, polymerization proceeds and that portion becomes insoluble in organic solvents.Based on the above process, this photosensitive resin functions as a negative resist.

According to the second invention, since the polysiloxane derivative in the first invention is constructed using the compounds represented by the structural formulas (1) and (2>, the polysiloxane derivative has 02-RIE resistance. The defined silicon content is high and, due to its molecular structure, the synthesis process from the starting materials can be easily controlled.

According to the third, fourth, and fifth inventions, in the first or second invention, since the unsaturated group, the alkyl group, and the halogenated alkyl group are configured as described above, the first or second invention
In addition to obtaining the same effect as the invention described above, the molecular weight of the functional group is reduced without impairing the reactivity toward heteroatom radicals, and the silicon content of the photosensitive resin is promoted.

According to the sixth invention, in the first or second invention,
The aromatic compound substituent is a -functional -heteroatom-
Since the compound represented by formula (3) has a -heteroatom bond, an aromatic ring is located adjacent to the heteroatom--heteroatom bond, and becomes a highly efficient radical generating source.

According to the seventh invention, in the first or second invention,
The starting material for obtaining the polysiloxane derivative has a weight average molecular weight of 2,000 or more and 100,000 or less.
Since the H-group polysiloxane derivative is used, the optimum molecular weight of the starting material for the polysiloxane derivative can be set.

That is, if the molecular weight of the starting material polysiloxane derivative with a terminal OH group is less than 2000, the polysiloxane derivative will not crystallize, making it unsuitable as a resist film, and requiring an extremely high exposure dose during patterning. Requires.

Furthermore, if the molecular weight is greater than 100,000, gelation tends to occur during the synthesis stage, making it impossible to obtain sufficient reproducibility.

Therefore, when obtaining the polysiloxane derivative using a polysiloxane derivative having terminal OH groups as a starting material, it is desirable to set the weight average molecular weight within the range of 2,000 to 100,000.

Synthesis of a photosensitive resin using a starting material with a molecular weight set in this way is carried out using a -functional aromatic compound (e.g., monochloride) under a basic catalyst. The basic catalyst is not specified, e.g. triethylamine, tri-n-
Examples include butylamine, pyridine, lutidine, γ-kotsudin, imidazole, and potassium carbonate.

Here, the amount of aromatic compounds during synthesis is OH
The amount may be sufficient as long as it can accommodate the number of molecules greater than the number of bases, and varies depending on the number average molecular weight, for example, 3 to 50 m o, Q%
It doesn't matter if it is within the range. Further, the amount of the catalyst may be within the range of about 10 times the amount of the aromatic substituent. Furthermore, the two solvents used in the synthesis include dimethylformamide, tetrahydrofuran, dimethyl sulfoxide, 1,4 dioxane, and methyl ethyl leketone.
, methyl phosphotyl ketone, and 1-helene.

Therefore, the above problem can be solved.

(Examples) The present invention will be specifically explained below using Examples 1 to 13.The present invention is not limited to the following Examples unless the gist thereof is exceeded.

Implementation” 1 Weight average molecular weight iMW=31000, number average molecular weight Mn=
Polyarylsilsesquioxane with 10,000 terminal OH groups (a polysiloxane derivative as starting material) 93.2
g (1mo, f)) and 4-(phenyl-2-dithio)benzoyl chloride (
>20.9 g (74.6 mmoN) of aromatic compound are dissolved in 1.0 g of dichloromethane (solvent during synthesis) and stirred in a water bath.

To this is added triethylamine (catalyst > 7.5 g (74,6
mmoJ! ) was added dropwise, followed by continued stirring for 15 minutes. Furthermore, remove the lid and continue stirring at room temperature for 3.5 hours. After stirring, the mixture is diluted with an appropriate solvent, insoluble matter is filtered, and the solvent is distilled off. The operations of dilution, filtration and distillation are repeated until no insoluble matter is generated. After that, 96.8 g of the obtained oil was diluted with the same amount of toluene, and 4.
8. I! was added dropwise to methanol to obtain 78.2 g of colorless crystals (polymer).

In Example 1, the starting materials, polysiloxane derivatives, were as shown in Table 1 below, the aromatic compounds were as shown in Table 2, and the catalyst and solvent during synthesis were as shown in Table 3. , Table 3 was obtained from Examples 2 to 5, which were conducted in the same manner except
A polymer with the yield shown in was obtained.

Table 1 Example Polysiloxane Derivatives (Starting Materials) Polyvinylsilsesquioxane) In = 12000 50:50 Hn = 9800)! w = 28000.97.4g (lllloj
) Mn = 17000 1, yo, a, ya 3. O1,2 “Mn =1
0000) 1w -31000,93,21 (1m) Table 2 27°1g (79,5mmof) 4-(Pyridyl・2-dithio)benzoyl chloride 4
．． 93g (17,5m...oj) Table 3 /Toluene In addition, 4-(phenyl-2-dithio)benzoyl chloride, 4-(anilino-2-dithio)benzoyl bromide, 4-( Pyridyl-2-dithio)benzoyl chloride and 4-(naphthyl-2-dithio)benzyl iodide are each expressed by the following formula (7) i8% formula%.
g and filtered through a 0.2 μm μm cymembrane filter to prepare a resist.

Furthermore, a photoresist (MP2400 manufactured by Shipley) was spin-coated on the silicon substrate, and the photoresist was heated in an oven at 200°C for 1 hour to harden it, forming a lower resist layer with a thickness of 1.5 μm. did.

On this lower resist layer, the prepared resist is applied to a thickness of 0.
It was spin-coated to a thickness of 2 μm and baked at 80° C. for 1 minute on a hot plate to form an upper resist layer. After producing a wafer in which a lower resist layer and an upper resist layer are sequentially formed on a silicon substrate in this manner, a Xe-Hg lump is applied to the upper resist layer.

and PLA501 aligner with cold mirror attached.
(manufactured by Canon Inc.) was used as an exposure source to perform contact exposure with a mask.

Next, this wafer was coated with methyl isobutyl ketone (hereinafter referred to as
(hereinafter referred to as MIBK) and isopro and alcohol (hereinafter referred to as I
The wafer was developed by immersing it in a 1:1 mixture (referred to as PA) for 45 seconds, then rinsing by immersing it in IPA for 30 seconds, and then heated the wafer on a hot plate at 60°C.
, and was ground for 1 minute.

In the above process, when the upper resist layer made of the prepared resist was exposed to light, the exposure amount (Dn''5) when 50% film remained was 35 ct (count).

However, 1ct=39.0mJ/Cm2. Moreover, the minimum resolution dimension was 0.5 μmL/S, which is the minimum dimension of the mask.

As can be seen from this result, the minimum resolution dimension of the resist prepared using the polymer produced in Example 1 can be smaller than the conventional 0.75 μmL/S, and the resolution can be reduced to at least 0.5 μmL/S. A statue is possible.

In Example 6, the resists prepared using the polymers obtained in Examples 2 to 5 were used in the combinations shown in Table 4 below, and all other operations were carried out in the same manner. In Examples 7 to 10, the exposure amount (Dn) and minimum resolution dimension when 0.50% film remained were as shown in Table 4 below.

Table 4 9 1 Polymer of Example 4: 6
9 ・0.5μmL/S This Example 7
Comparing ~10 and Example 6, the exposure amount at 50% remaining film was lower in the order of Example 6.7.9.8.10, and the minimum resolution dimension was the same as that of the mask used in each Example. It can be seen that the minimum mask dimension of 0.5 μmL/S can be obtained.

The same procedure as in Example 6 was carried out except that the exposure source was a KrF excimer laser (manufactured by Lambda Physics). At this time, the exposure amount (Dn) when 50% film remains is 1
．． 4 J/cm2, and it was possible to resolve down to at least 0.5 μmL/S, which is the minimum dimension of the mask.

2 Using the resist prepared in Example 6, a dry film with a thickness of 0.52 μm was formed on a silicon wafer, and then the silicon wafer was coated using a DEM451 parallel plate dry etcher (manufactured by Anelva). Dry etching with 02 gas (02-R
IE) was performed for 20 minutes. The etching conditions at that time were
02 gas pressure 1. ○Pa, 02 gas flow rate 20SCC
M, the RF power density was 0.12 W/Cm''.

After this etching is completed, measure the amount of film loss in the dry film using a film thickness meter (
When measured with Talystep (manufactured by Taylor Hobson), it was 49 nm.

According to this measurement result, the etching rate of 02-RIE for the dry film formed using the resist prepared in Example 6 was 2.45 nm/min, which was 15 nm/min compared to the conventional etching rate of 15 nm/min.
It can be seen that the speed is slower than nm/min.

A lower resist layer consisting of a heat-cured photoresist (MP2400 manufactured by Shipley Co., Ltd.) with a film thickness of 2 μm was formed on the silicone substrate, and Example 6 was formed on the lower resist layer.
The resist prepared in step 1 was spin-coated and baked on a hot plate at 60° C. for 1 minute to form an upper resist layer with a thickness of 0.2 μm. After producing a wafer in which a lower resist layer and an upper resist layer are sequentially formed on a silicon substrate in this way, in order to pattern the upper resist layer, the upper resist layer of this wafer is first coated with Xe-Hg. Close-contact exposure was performed using a lamp and a CM230 cold mirror. The exposure amount at this time was 42ct
And so.

After exposure, the wafer was immersed in a mixed solution of K/IPA=1:1 from M for 45 seconds, further immersed in IPA for 30 seconds, and then baked on a hot plate at 80°C for 11 minutes to remove the upper resist layer. Patterning has been completed.

Next, using the patterned upper resist layer as a mask, 02-RIE was performed on the lower resist layer for 33 minutes using a dry etcher DEM451. The etching conditions at that time were 02 gas pressure and 1. OPa, 02 gas flow rate 20SCCM, RF puff density 0.12W/
It was set as crn2.

A cross-sectional SEM (scanning electron microscope) observation of the two-layer resist pattern obtained after etching, consisting of an upper resist layer and a lower resist layer, revealed that 0.5 μmL/
It was found that S was formed in a rectangular shape with an aspect ratio of 4.

As can be seen from the observation results, the two-layer resist pattern formed by the two-layer resist method using the resist prepared in Example 6 was patterned with high resolution and formed with high precision and high aspect ratio.

(Effects of the Invention) As described above in detail, according to the first invention, the photosensitive resin is formed using a polysiloxane derivative (including a polysilsesquioxane derivative) having a high silicon content as a starting material. It has one or more groups selected from unsaturated groups, alkyl groups, and halogenated alkyl groups as a functional group, and can efficiently remove heteroatom radicals (such as thiyl radicals) that are highly reactive with this functional group. It is composed mainly of a polysiloxane derivative having an aromatic compound substituent having a heteroatom--heteroatom bond that occurs naturally. Therefore, the aromatic compound substituent has high sensitivity to light irradiation of a predetermined wavelength (region) depending on its structure, and high resolution can be obtained due to the chemical structure of the resin containing the polysiloxane derivative. and its high silicon content provides high o2 RIE resistance.

Therefore, a photosensitive resin with excellent film thickness and processing accuracy can be realized.

Further, according to the photosensitive resin of the present invention, by appropriately selecting the structure of the aromatic substituent,
Since the optical absorption wavelength can be changed over a wide range of about 0 nm,
For i-line, Xe-Cl! It becomes possible to configure resists for excimer lasers, KrF excimer lasers, ArF excimer lasers, and the like.

According to the second invention, in the first invention, the polysiloxane derivative is composed of the compounds represented by the formulas (1) and (2), and therefore, due to its chemical structure, High controllability is obtained, and a polysiloxane derivative having a desired molecular weight can be obtained with high precision.

Furthermore, according to the present invention, the I structure of the polysiloxane derivative itself can be made to increase the silicon content of the photosensitive resin as much as possible, and based on this, the
, can promote improvement in RIE resistance.

According to the third, fourth, and fifth inventions, in the first or second invention, since the unsaturated group, the alkyl group, and the halogenated alkyl group are configured as described above, the structure of the functional group itself is changed. , the silicon content of the photosensitive resin can be increased as much as possible without impairing the reactivity toward heteroatom radicals, and the o2-RIE of the photosensitive resin can be
It is possible to optimize resistance.

According to the sixth invention, in the first or second invention,
Since the aromatic compound substituent is represented by the above formula (3), the aromatic compound substituent has a large absorption in a predetermined wavelength (region) depending on the structure of the aromatic ring, and Since the heteroatom--heteroatom bond is located adjacent to the ring, the bonds are easily severed, resulting in a highly efficient radical generation source. Therefore, the sensitivity of the photosensitive resin can be increased compared to when the aromatic compound substituent has a different structure.

Further, according to the present invention, the structure of the aromatic compound substituent itself can be made to maximize the silicon content of the photosensitive resin, and based on this, the 02-RIE resistance can be improved. can get.

According to the seventh invention, in the first or second invention,
The starting material for obtaining the polysiloxane derivative has a weight average molecular weight of 2,000 or more and 100,000 or less.
Since the H-group polysiloxane derivative is used, it is possible to realize a photosensitive resin that has a suitable resist function and has excellent reproducibility.

Claims (1)

[Claims] 1. Contains a polysiloxane derivative having one or more of an unsaturated group, an alkyl group, and a halogenated alkyl group, and an aromatic compound substituent having a heteroatom-heteroatom bond. A photosensitive resin characterized by: 2. The photosensitive resin according to claim 1, wherein the polysiloxane derivative is a compound represented by the following structural formula (1) or (2), or a compound represented by the following structural formula (1) or (2).
A copolymer of the compound represented by or the following structural formula (1
A photosensitive resin comprising a mixture of compounds represented by ) and (2). ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(2) (In the formula, R21, R22, R41 and R42 are unsaturated groups, lower alkyl groups, or Represents a halogenated alkyl group, which may be the same or different from each other.R1
1, R12, R31, R32, R33 and R34 are aromatic compound substituents having a heteroatom-heteroatom bond, and may be the same or different from each other. Moreover, m and n represent positive integers. ) 3. The photosensitive resin according to claim 1 or 2, wherein the unsaturated group is a vinyl group (CH_2=CH-), an allyl group (CH_2=CH-CH_2-), an isopropenyl group (CH_2=C-CH_3 ), and a photosensitive resin selected from a _2-butenyl group (CH_2=CH-CH_2-CH_2-). 4. The photosensitive resin according to claim 1 or 2, wherein the alkyl group is selected from methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, and t-butyl group. Selected photosensitive resin. 5. The photosensitive resin according to claim 1 or 2, wherein the halogenated alkyl group is selected from chloro(bromo, iodo)methyl (ethyl, propyl, butyl) groups (the number of halogens is 1 or more and 9 or less). sex resin. 6. The photosensitive resin according to claim 1 or 2, wherein the aromatic compound substituent is represented by the following structural formula (3). -Ar1-Y-Y-Ar2...(3) (In the formula, Y represents a heteroatom and is the same. Ar1 and Ar2 are monocyclic or polycyclic aromatic substituents, such as a phenyl group, a substituted A phenyl group having a group, a naphthyl group, a naphthyl group having a substituent, a biphenyl group, a biphenyl group having a substituent, or a compound similar thereto, and may be the same or different from each other.) , The photosensitive resin according to claim 1 or 2, wherein the starting material for obtaining the polysiloxane derivative is a terminal O having a weight average molecular weight of 2,000 or more and 100,000 or less.
A photosensitive resin made from a polysiloxane derivative with H groups.