JPH04121737U - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JPH04121737U JPH04121737U JP3611091U JP3611091U JPH04121737U JP H04121737 U JPH04121737 U JP H04121737U JP 3611091 U JP3611091 U JP 3611091U JP 3611091 U JP3611091 U JP 3611091U JP H04121737 U JPH04121737 U JP H04121737U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- semiconductor substrate
- semiconductor
- heating device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 145
- 238000010438 heat treatment Methods 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 シリコンウェハ等の基板を均一な面内温度で
加熱することのできる基板加熱装置を提供することを目
的とする。
【構成】 基板を加熱するための加熱保持台及びその加
熱保持台に基板を載置するための基板支持搬送手段を有
し、基板が加熱されるときに基板支持搬送手段が基板の
下面に接するかあるいは基板の下面近傍に位置する基板
加熱装置において、基板支持搬送手段の基板側の部分が
熱伝導性の高い部材で構成され、半導体基板と離れた部
分の少なくとも一部が熱伝導性の低い部材で構成されて
いる。
(57) [Summary] [Purpose] The object is to provide a substrate heating device that can heat a substrate such as a silicon wafer at a uniform in-plane temperature. [Structure] It has a heating holding table for heating the substrate and a substrate supporting and conveying means for placing the substrate on the heating holding table, and the substrate supporting and conveying means comes into contact with the lower surface of the substrate when the substrate is heated. Alternatively, in a substrate heating device located near the bottom surface of the substrate, the substrate-side portion of the substrate support/transfer means is made of a material with high thermal conductivity, and at least a portion of the portion away from the semiconductor substrate has low thermal conductivity. It is made up of parts.
Description
【０００１】0001
この考案は、基板処理加熱装置に関する。さらに詳しくは、この考案は、シリ コンウェハ等の半導体基板を均一な面内温度で加熱することのできる基板加熱装 置に関する。 This invention relates to a substrate processing heating apparatus. More specifically, this idea Substrate heating equipment that can heat semiconductor substrates such as semiconductor wafers with uniform in-plane temperature. Regarding the location.
【０００２】0002
近年の半導体産業の興隆に伴い、半導体基板の加熱装置は半導体の製造プロセ スにおける様々な工程で使用されている。例えば、半導体基板にイオンを注入し た後に行われるアニール工程で半導体基板を加熱する場合や、半導体基板の気相 ドライエッチングの際にエッチレートを向上させるために半導体基板を加熱する 場合や、また、ＣＶＤ法で半導体基板にＳｉＯ２等の薄膜形成の際に、その堆積 速度を向上させるために半導体基板を加熱する場合に使用されている。With the rise of the semiconductor industry in recent years, semiconductor substrate heating devices are used in various steps in the semiconductor manufacturing process. For example, when a semiconductor substrate is heated in an annealing process performed after ions are implanted into the semiconductor substrate, when a semiconductor substrate is heated to improve the etch rate during vapor phase dry etching of a semiconductor substrate, It is used to heat the semiconductor substrate in order to improve the deposition rate when forming a thin film such as SiO 2 on the semiconductor substrate using the CVD method.
【０００３】 図２は、このような従来の基板加熱装置の説明図であり、加熱時の状態を表し ている。同図の基板加熱装置は、基板支持搬送手段４、その基板支持搬送手段４ を上下に動かすための駆動装置５、ヒーター６が内臓された半導体基板１０を加 熱するための加熱保持台７から構成されており、加熱保持台の中心部は貫通口が 開けられ、その中に基板支持搬送手段４が上下可動に配設されている。そして、 この基板加熱装置は、開閉可能なゲート９が設置された加熱チャンバー８の中に 収められている。0003 FIG. 2 is an explanatory diagram of such a conventional substrate heating device, and shows the state during heating. ing. The substrate heating device shown in the figure includes a substrate supporting and transporting means 4, and a substrate supporting and transporting means 4. A semiconductor substrate 10 having a built-in driving device 5 and a heater 6 for moving it up and down is heated. It consists of a heating holding table 7 for heating, and the center of the heating holding table has a through hole. It is opened, and a substrate supporting and conveying means 4 is disposed therein so as to be movable up and down. and, This substrate heating device is located in a heating chamber 8 in which a gate 9 that can be opened and closed is installed. It is contained.
【０００４】 この基板加熱装置で半導体基板１０を加熱する場合には、外部半導体搬送装置 １１のアーム１２により、半導体を格納するキャリヤー（図示せず）から取り出 された半導体基板１０は、ゲート９が開いた加熱チャンバー８の中に搬入され、 基板支持搬送手段４の真上まで運ばれる。次に基板支持搬送手段４が駆動装置５ により下方から上方に向かって伸び、半導体基板１０をその上に載置し、更に外 部半導体搬送装置１１のアーム１２の上方に半導体基板を押しあげ、アーム１２ と半導体基板１０とを離す。その後、アーム１２はゲート９から加熱チャンバー ８の外に移動し、ゲート９が閉じる。0004 When heating the semiconductor substrate 10 with this substrate heating device, an external semiconductor transfer device is used. The semiconductor is taken out from the carrier (not shown) by the arm 12 of 11. The processed semiconductor substrate 10 is carried into the heating chamber 8 with the gate 9 open, and The substrate is carried directly above the substrate support and transfer means 4. Next, the substrate supporting and conveying means 4 is moved to the driving device 5. extends from below to above, places the semiconductor substrate 10 thereon, and then extends outward. The semiconductor substrate is pushed up above the arm 12 of the semiconductor transfer device 11, and the arm 12 and the semiconductor substrate 10 are separated. After that, the arm 12 is moved from the gate 9 to the heating chamber. 8 and gate 9 closes.
【０００５】 一方、半導体基板１０を載置した基板支持搬送手段４は下方に移動し、図２に 示したように半導体基板１０が加熱保持台７と基板支持搬送手段４の双方の上に 載置されるようにする。加熱保持台７は内臓されたヒーターで加熱されており、 その熱によって半導体基板１０が加熱されることになる。[0005] On the other hand, the substrate support and conveyance means 4 on which the semiconductor substrate 10 is placed moves downward, and as shown in FIG. As shown, the semiconductor substrate 10 is placed on both the heating holding table 7 and the substrate supporting and transporting means 4. so that it is placed. The heating holding table 7 is heated by a built-in heater, The semiconductor substrate 10 is heated by the heat.
【０００６】 所定の加熱処理を施された半導体基板１０は、それが加熱保持台７に載置され た順序と逆の順序で加熱チャンバー８の外へ搬送される。即ち、基板支持搬送装 置４により、半導体基板１０は加熱保持台７から上に押し上げられる。外部半導 体搬送装置１１のアーム１２がゲート９から加熱チャンバー８の中に入り、半導 体基板１０の下まで伸びてくる。ついで半導体支持搬送手段４が下方に移動し、 半導体基板１０をアーム１２に載置する。半導体基板１０を載置したアーム１２ は、ゲート９から加熱チャンバーの外へ半導体基板１０を搬出する。このように して、従来の基板加熱装置は半導体基板を加熱処理している。[0006] The semiconductor substrate 10 that has been subjected to a predetermined heat treatment is placed on the heating holding table 7. They are transported out of the heating chamber 8 in the reverse order. In other words, substrate support and transportation equipment The semiconductor substrate 10 is pushed up from the heating holding table 7 by the step 4 . external semiconductor The arm 12 of the body transfer device 11 enters the heating chamber 8 through the gate 9, and the semiconductor It extends to the bottom of the body substrate 10. Then, the semiconductor supporting and conveying means 4 moves downward, A semiconductor substrate 10 is placed on the arm 12. Arm 12 on which semiconductor substrate 10 is placed The semiconductor substrate 10 is carried out of the heating chamber through the gate 9. in this way Conventional substrate heating apparatuses heat-process semiconductor substrates.
【０００７】[0007]
しかしながら、このような従来の基板加熱装置においては、図２に示すように 、半導体基板１０が加熱保持台７に載置されて加熱されるときに、基板支持搬送 手段４とも接触しており、しかも基板支持搬送手段４が金属から構成されている ので、基板支持搬送手段７がヒートシンクとして機能してしまうこととなる。そ の結果、基板支持搬送手段７と接触している部分の半導体基板１０の温度が、加 熱保持台７と接触している部分の半導体基板１０の温度より低くなり、半導体基 板の面内温度が不均一となる。このため、こうような従来の基板加熱装置を用い て半導体基板をアニールすると半導体基板内に局部熱応力が生じ、スリップライ ン等の結晶欠陥生じたり、また、半導体基板を気相ドライエッチング処理すると エッチングレートが半導体基板の面内で不均一となったり、或いは半導体基板上 にＣＶＤ法で薄膜を形成すると膜厚が不均一になったりするという問題点があっ た。 However, in such a conventional substrate heating device, as shown in FIG. , when the semiconductor substrate 10 is placed on the heating holding table 7 and heated, the substrate is supported and transported. It is also in contact with the means 4, and moreover, the substrate supporting and conveying means 4 is made of metal. Therefore, the substrate supporting and transporting means 7 ends up functioning as a heat sink. So As a result, the temperature of the portion of the semiconductor substrate 10 that is in contact with the substrate support/transfer means 7 increases. The temperature of the semiconductor substrate 10 is lower than that of the portion that is in contact with the heat holding table 7, and the semiconductor substrate The in-plane temperature of the plate becomes uneven. For this reason, it is difficult to use conventional substrate heating equipment like this. When a semiconductor substrate is annealed, local thermal stress occurs within the semiconductor substrate, causing slip-line Crystal defects such as If the etching rate becomes non-uniform within the plane of the semiconductor substrate or When forming a thin film using the CVD method, there is a problem that the film thickness becomes uneven. Ta.
【０００８】 この考案は以上のような従来技術の課題を解決しようとするものであり、シリ コンウェハ等の基板を均一な面内温度で加熱することのできる基板加熱装置を提 供することを目的としている。[0008] This idea attempts to solve the problems of the conventional technology as described above, and We offer a substrate heating device that can heat substrates such as concrete wafers at a uniform in-plane temperature. The purpose is to provide
【０００９】[0009]
上記の目的を達成するために、この考案の基板加熱装置は、基板を加熱するた めの加熱保持台及びその加熱保持台に基板を載置するための基板支持搬送手段を 有し、基板が加熱されるときに基板支持搬送手段が基板の下面に接するかあるい は基板の下面近傍に位置する基板加熱装置において、基板支持搬送手段の基板側 の部分が熱伝導性の高い部材で構成され、半導体基板と離れた部分の少なくとも 一部が熱伝導性の低い部材で構成されていることを特徴としている。 In order to achieve the above object, the substrate heating device of this invention is used to heat the substrate. A heated holding table and a substrate supporting and conveying means for placing the substrate on the heating holding table are provided. and the substrate supporting and conveying means is in contact with the bottom surface of the substrate when the substrate is heated. is the substrate side of the substrate support and transfer means in the substrate heating device located near the bottom surface of the substrate. The part is made of a material with high thermal conductivity, and at least the part separated from the semiconductor substrate It is characterized in that a part of it is made of a member with low thermal conductivity.
【００１０】 このように、この考案の基板加熱装置は、従来、ステンレス等の金属だけで構 成されていた基板支持搬送手段に関し、半導体基板と接する側の基板支持搬送手 段の部分を熱伝導率の高い耐熱性部材で構成し、更に、半導体基板と接しない部 分を熱伝導性の低い耐熱性部材で構成したものである。0010 In this way, the substrate heating device of this invention was conventionally constructed only from metals such as stainless steel. With regard to the substrate support and transfer means that was previously used, the substrate support and transfer means on the side that comes into contact with the semiconductor substrate The step part is made of a heat-resistant material with high thermal conductivity, and the part that does not come into contact with the semiconductor substrate is The parts are made of heat-resistant materials with low thermal conductivity.
【００１１】[0011]
この考案の基板加熱装置においては、基板支持搬送手段は半導体基板と接する 側の部分が熱伝導率の高い耐熱性部材で構成されているので、加熱時にはその熱 伝導率の高い部材が加熱保持台から供給される熱を効率よく半導体基板に伝達す る。このため、加熱時に半導体基板は、加熱保持台上に載置されている部分が直 接加熱保持台から供給される熱により加熱されると共に、半導体基板の基板支持 搬送手段上に載置されている部分も加熱保持台から基板支持搬送手段を介して供 給される熱により加熱される。 In the substrate heating device of this invention, the substrate supporting means is in contact with the semiconductor substrate. The side part is made of a heat-resistant material with high thermal conductivity, so when heated, the heat is The highly conductive material efficiently transfers the heat supplied from the heating holder to the semiconductor substrate. Ru. Therefore, during heating, the part of the semiconductor substrate placed on the heating holding table is directly It is heated by the heat supplied from the heated holding table and also supports the semiconductor substrate. The portion placed on the transport means is also supplied from the heating holding table via the substrate support transport means. It is heated by the supplied heat.
【００１２】 さらに、この基板支持搬送手段は、半導体基板と離れた部分の少なくとも一部 が熱伝導性の低い部材で構成されているので、半導体基板に供給された熱が基板 支持搬送手段を介して外部に逃げることを防止する。このため、半導体基板の加 熱保持台上に載置されている部分と基板支持搬送手段上に載置されている部分と は短時間に均一に加熱されるようになる。0012 Further, the substrate supporting and conveying means includes at least a portion of the portion away from the semiconductor substrate. is made of materials with low thermal conductivity, so the heat supplied to the semiconductor substrate is transferred to the substrate. Preventing it from escaping to the outside via the support conveyance means. For this reason, the processing of the semiconductor substrate is The part placed on the heat holding table and the part placed on the substrate support conveyance means. will be heated evenly in a short time.
【００１３】 なお、半導体基板の加熱時におけるこのような基板支持搬送手段の作用は、基 板支持搬送手段上に半導体基板が接するように載置された場合に、基板支持搬送 手段が加熱保持台からの熱を高い効率で半導体基板に伝達するので特に良好に奏 じるが、半導体基板を加熱保持台上に安定的に載置するための搬送操作の便宜上 の理由等により、基板支持搬送手段が半導体基板と接することなく半導体基板の 下面近傍に位置する場合でも、基板支持搬送手段は半導体基板に輻射熱を供給す るので同様の作用が奏じることとなる。[0013] Note that the action of such a substrate supporting and transporting means when heating a semiconductor substrate is based on the basic principle. When the semiconductor substrate is placed on the board supporting and transporting means so that it is in contact with the board supporting and transporting means, The device performs particularly well because it transfers heat from the heating holder to the semiconductor substrate with high efficiency. However, for the convenience of transport operations to stably place the semiconductor substrate on the heated holding table. Due to reasons such as this, the substrate support and transfer means does not come into contact with the semiconductor substrate. Even if it is located near the bottom surface, the substrate support and transfer means supplies radiant heat to the semiconductor substrate. Therefore, the same effect will be produced.
【００１４】[0014]
以下、この考案を実施例により具体的に説明する。 This invention will be specifically explained below using examples.
【００１５】 図１はこの考案の基板加熱装置に使用する基板支持搬送手段１の一態様の斜視 図であるが、この考案の基板加熱装置は、図２の基板支持搬送手段４を図１に示 す基板支持搬送手段１に代える以外は図２に示す構成と同じであり、また基板の 加熱処理の方法も図２について説明した通りである。[0015] FIG. 1 is a perspective view of one embodiment of a substrate supporting and transporting means 1 used in the substrate heating apparatus of this invention. 1, the substrate heating device of this invention has the substrate supporting and conveying means 4 of FIG. 2 as shown in FIG. The structure is the same as that shown in FIG. 2 except that the substrate supporting and conveying means 1 is replaced with the substrate supporting means 1. The method of heat treatment is also the same as described with reference to FIG.
【００１６】 図１において、この考案を特徴づける基板支持搬送手段１は、シリコンウェハ やＧａＡｓウェハ等の半導体基板と接する側を熱伝導性の高い円板状の部材２で 構成し、その部材２を支持する円柱状の部分を熱伝導性の低い部材３で構成する 。なお、熱伝導性のよい部材２の形状は円板状に限らず、その半導体基板と接す る面も必ずしも平板状でなくともよい。半導体基板を安定に支持できる形状であ る限り種々の形状とすることができる。また、熱伝導性の低い部材１の形状も円 柱状に限らず、部材２を支持できる限り種々の形状とすることができる。[0016] In FIG. 1, a substrate supporting and transporting means 1 that characterizes this invention is a silicon wafer. A disc-shaped member 2 with high thermal conductivity is used on the side in contact with a semiconductor substrate such as a wafer or a GaAs wafer. The cylindrical part that supports the member 2 is made of a member 3 with low thermal conductivity. . Note that the shape of the member 2 with good thermal conductivity is not limited to a disk shape, and may be in contact with the semiconductor substrate. The surface does not necessarily have to be flat. It has a shape that can stably support a semiconductor substrate. It can be made into various shapes as long as it is possible. In addition, the shape of member 1 with low thermal conductivity is also circular. It is not limited to a columnar shape, but can be made into various shapes as long as it can support the member 2.
【００１７】 部材２の材質としては、加熱温度に耐えることのできるものであり、その熱伝 導性が半導体基板の熱伝導性と同等か若しくはより高いものを選択することが好 ましい。このような部材２用の材質としては、銅、タングステン、モリブデンな どの金属やシリコンなどの半導体が好ましい。また、部材２の材質としては、そ れが基板に直接接触するものなので、基板を汚染しないような材質を選択するこ とが好ましい。従って、基板がシリコンウェハの場合には、基板の汚染を極力防 止するために多結晶シリコンで円板状の部材２を構成することが好ましい。[0017] The material of member 2 is one that can withstand the heating temperature and has good heat transfer properties. It is preferable to select a material whose conductivity is equal to or higher than the thermal conductivity of the semiconductor substrate. Delicious. Materials for such member 2 include copper, tungsten, and molybdenum. Any metal or semiconductor such as silicon is preferred. In addition, the material of member 2 is Since this comes into direct contact with the board, it is important to choose a material that will not contaminate the board. is preferable. Therefore, if the substrate is a silicon wafer, avoid contamination of the substrate as much as possible. In order to prevent this, it is preferable that the disc-shaped member 2 is made of polycrystalline silicon.
【００１８】 部材１の材質としては、加熱温度に耐えることができ、熱伝導性が部材２より も十分に低く、部材２から部材１を通して熱が逃げ難いものであることが必要で ある。このような部材１の材質としては、アルミナ、窒化ケイ素、窒化硼素等の セラミックス、耐熱プラスチック、硬化性樹脂、テフロン樹脂等の耐熱有機物、 石英、ガラス等を使用できる。コストが低く入手が容易な点からは石英が好まし い。[0018] The material of member 1 can withstand the heating temperature and has higher thermal conductivity than member 2. It is necessary that the temperature is sufficiently low and that it is difficult for heat to escape from member 2 through member 1. be. Materials for such a member 1 include alumina, silicon nitride, boron nitride, etc. Heat-resistant organic materials such as ceramics, heat-resistant plastics, hardening resins, and Teflon resins, Quartz, glass, etc. can be used. Quartz is preferred because of its low cost and easy availability. stomach.
【００１９】 部材１と部材２の一体化は、当業者に公知の方法で一体化することができる。 例えば、部材２を金属製とし、部材１をセラミックス製とした場合、金属製の部 材２に複数の凹部を設け、一方、セラミックス製の部材１にも、金属製の部材２ の凹部に嵌合するように凸部を設け、両者を嵌合すればよい。[0019] The members 1 and 2 can be integrated by methods known to those skilled in the art. For example, if member 2 is made of metal and member 1 is made of ceramics, the metal parts A plurality of recesses are provided in the material 2, and the ceramic member 1 is also provided with a metal member 2. A convex portion may be provided so as to fit into the concave portion, and the two may be fitted together.
【００２０】 なお、部材１の部材２の反対側の端には、通常駆動装置５との接合のための接 合部材が取り付けられるが、このように半導体基板１０から部材１よりも離れた 位置に設けられる部材は熱伝導性の高い金属製であってもよい。[0020] Note that the end of the member 1 opposite to the member 2 is provided with a connection for normally connecting it to the drive device 5. The joining member is attached, but in this way it is located further away from the semiconductor substrate 10 than the member 1. The member provided at the position may be made of metal with high thermal conductivity.
【００２１】[0021]
この考案の基板加熱装置によれば、シリコンウェハ等の半導体基板を均一な面 内温度で加熱することができ、従って、局部熱応力が生じず、スリップライン等 の結晶欠陥も生じない。また、基板を気相エッチングする際にも、均一なエッチ レートを達成することができる。基板にＣＶＤ法により薄膜形成する場合にも均 一な膜厚を形成することができる。 According to the substrate heating device of this invention, semiconductor substrates such as silicon wafers can be heated evenly. Can be heated at internal temperature, therefore no local thermal stress occurs, slip line etc. No crystal defects occur. Also, when performing vapor phase etching of the substrate, uniform etching can be achieved. rate can be achieved. Even when forming a thin film on a substrate using the CVD method, A uniform film thickness can be formed.
【図１】図１は、この考案の基板加熱装置に使用する基
板支持搬送手段の説明のための斜視図である。FIG. 1 is a perspective view for explaining a substrate supporting and conveying means used in the substrate heating apparatus of this invention.
【図２】図２は、従来の基板加熱装置の説明図である。FIG. 2 is an explanatory diagram of a conventional substrate heating device.
１ この考案で使用する基板支持搬送手段 ２ 熱伝導性の高い部材 ３ 熱伝導性の低い部材 ４ 従来の基板加熱装置で使用する基板支持搬送手段 ５ 駆動装置 ６ ヒーター ７ 加熱保持台 ８ 加熱チャンバー ９ ゲート １０ 半導体基板 １１ 外部基板搬送装置 １２ アーム 1 Substrate support and transportation means used in this invention 2 Highly thermally conductive materials 3. Components with low thermal conductivity 4 Substrate support and conveyance means used in conventional substrate heating equipment 5 Drive device 6 Heater 7 Heating holding table 8 Heating chamber 9 gate 10 Semiconductor substrate 11 External board transfer device 12 Arm
Claims (2)
の加熱保持台に基板を載置するための基板支持搬送手段
を有し、基板が加熱されるときに基板支持搬送手段が基
板の下面に接するかあるいは基板の下面近傍に位置する
基板加熱装置において、基板支持搬送手段の基板側の部
分が熱伝導性の高い部材で構成され、半導体基板と離れ
た部分の少なくとも一部が熱伝導性の低い部材で構成さ
れていることを特徴とする基板加熱装置。1. A heating holding table for heating the substrate and a substrate supporting and transporting means for placing the substrate on the heating and holding table, wherein when the substrate is heated, the substrate supporting and transporting means In a substrate heating device that is in contact with the semiconductor substrate or located near the bottom surface of the substrate, the substrate-side portion of the substrate support/transfer means is made of a highly thermally conductive material, and at least a portion of the portion away from the semiconductor substrate is made of a thermally conductive material. 1. A substrate heating device comprising a member having a low temperature.
高い部材が金属であり、熱伝導性の低い部材が石英であ
る請求項１記載の基板加熱装置。2. The substrate heating device according to claim 1, wherein the highly thermally conductive member constituting the substrate supporting and transporting means is metal, and the low thermally conductive member is quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991036110U JP2553078Y2 (en) | 1991-04-20 | 1991-04-20 | Substrate heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991036110U JP2553078Y2 (en) | 1991-04-20 | 1991-04-20 | Substrate heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04121737U true JPH04121737U (en) | 1992-10-30 |
| JP2553078Y2 JP2553078Y2 (en) | 1997-11-05 |
Family
ID=31918126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991036110U Expired - Lifetime JP2553078Y2 (en) | 1991-04-20 | 1991-04-20 | Substrate heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2553078Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003309049A (en) * | 2002-04-15 | 2003-10-31 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing apparatus |
| JP2004056084A (en) * | 2002-03-13 | 2004-02-19 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing system |
| JP2004128232A (en) * | 2002-10-03 | 2004-04-22 | Sumitomo Electric Ind Ltd | Ceramic junction, wafer holder, and semiconductor manufacturing equipment |
| JP2005123602A (en) * | 2004-09-24 | 2005-05-12 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04305958A (en) * | 1991-01-10 | 1992-10-28 | Tokyo Electron Ltd | Semiconductor manufacturing device |
-
1991
- 1991-04-20 JP JP1991036110U patent/JP2553078Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04305958A (en) * | 1991-01-10 | 1992-10-28 | Tokyo Electron Ltd | Semiconductor manufacturing device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004056084A (en) * | 2002-03-13 | 2004-02-19 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing system |
| JP2003309049A (en) * | 2002-04-15 | 2003-10-31 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing apparatus |
| JP2004128232A (en) * | 2002-10-03 | 2004-04-22 | Sumitomo Electric Ind Ltd | Ceramic junction, wafer holder, and semiconductor manufacturing equipment |
| JP2005123602A (en) * | 2004-09-24 | 2005-05-12 | Sumitomo Electric Ind Ltd | Holder for semiconductor manufacturing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2553078Y2 (en) | 1997-11-05 |
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