JPH0412072A - Production of high-strength porous sic sintered material - Google Patents
Production of high-strength porous sic sintered materialInfo
- Publication number
- JPH0412072A JPH0412072A JP11146090A JP11146090A JPH0412072A JP H0412072 A JPH0412072 A JP H0412072A JP 11146090 A JP11146090 A JP 11146090A JP 11146090 A JP11146090 A JP 11146090A JP H0412072 A JPH0412072 A JP H0412072A
- Authority
- JP
- Japan
- Prior art keywords
- sintering
- whiskers
- sic
- powder
- carbonaceous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 title abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 35
- 239000000843 powder Substances 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 abstract description 7
- 239000011347 resin Substances 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000005011 phenolic resin Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 48
- 238000005452 bending Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000001035 drying Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、機械的強度性能に優れる多孔質組織のSiC
焼結体を製造するための方法に関する。Detailed Description of the Invention [Industrial Field of Application] The present invention provides SiC with a porous structure that has excellent mechanical strength performance.
The present invention relates to a method for producing a sintered body.
〔従来の技術)
SiCのようなセラミックス材質で構成される多孔質構
造体は、耐熱性や化学的安定性に優れているため、溶融
金属用のフィルター、高温断熱材、触媒担体、パーティ
キュレート捕集材などに実用されている。[Prior art] Porous structures made of ceramic materials such as SiC have excellent heat resistance and chemical stability, so they can be used as filters for molten metals, high-temperature insulation materials, catalyst supports, and particulate traps. It is used for collecting wood, etc.
従来、多孔質セラミックス構造体については多くの製造
技術が提案されているが、工程的に最も簡便な手段は三
次元網目構造を備える有機質多孔体の骨格面にセラミッ
クススラリーを何着させたのち、乾燥、焼成する方法(
特開昭59−3059号公報、同63−1.56084
号公報等)である。この種の手段によるSiC系多孔質
体を対象としたプロセスとしては、有機質繊維の成形体
にSiCスラリを含浸させて固化したのち焼結する方法
(特開昭55−71659号公報)が知られている〔発
明が解決しようとする課題]
しかし、有機多孔質体にSiCスラリーを含浸して乾燥
、焼成する従来の方法では、形成されるSiC多孔組織
の結合力が弱いため十分な強度性能が付与されない問題
点がある。Conventionally, many manufacturing techniques have been proposed for porous ceramic structures, but the simplest method in terms of process is to apply a ceramic slurry on the skeletal surface of an organic porous body with a three-dimensional network structure, and then Drying and firing method (
JP-A-59-3059, JP-A No. 63-1.56084
Publications, etc.). As a process for SiC-based porous bodies using this type of means, a method is known in which an organic fiber molded body is impregnated with SiC slurry, solidified, and then sintered (Japanese Patent Laid-Open No. 71659/1983). [Problems to be Solved by the Invention] However, in the conventional method of impregnating an organic porous body with SiC slurry, drying and firing, the bonding force of the SiC porous structure formed is weak, so that sufficient strength performance cannot be achieved. There are some issues that are not covered.
多孔組織の骨格を強固にして強度性能の向上を図るため
には、骨格原料をSiC粉末に代えて微小繊維状のSi
Cウィスカーを用いて焼結化することが有効と考えられ
る。ところが、SiCウィスカーは1700°C以上の
高温で焼結すると再結晶化による変態を起し、形状変形
を生して元の形態および強度を保持できなくなる難点が
ある。In order to strengthen the framework of the porous structure and improve its strength performance, it is necessary to use microfibrous Si instead of SiC powder as the framework raw material.
Sintering using C whiskers is considered effective. However, when SiC whiskers are sintered at a high temperature of 1700° C. or higher, they undergo transformation due to recrystallization, resulting in shape deformation and difficulty in maintaining their original shape and strength.
発明者は、SiCウィスカーの熱変態が表面に薄い炭素
質被膜を形成することで防止し得ることに着目して研究
を重ねた結果、前記炭素質被膜を形成したSiCウィス
カーをB粉末と混合した状態で特定の条件によりホット
プレス焼結すると高強度のSiC多孔質体に転化するこ
とを確認するに至った。The inventor conducted repeated research focusing on the fact that thermal transformation of SiC whiskers can be prevented by forming a thin carbonaceous film on the surface, and as a result, the SiC whiskers with the carbonaceous film formed thereon were mixed with B powder. It has been confirmed that hot press sintering under specific conditions converts the material into a high-strength porous SiC material.
本発明は上記の知見に基づいて開発されたもので、その
目的とするところはSiCウィスカーを骨格とした機械
的強度に優れる多孔質SiC焼結体の製造方法を提供す
るにある。The present invention was developed based on the above findings, and its purpose is to provide a method for producing a porous SiC sintered body having excellent mechanical strength and having a skeleton of SiC whiskers.
上記の目的を達成するための本発明による高強度多孔質
SiC焼結体の製造方法は、厚さ20〜100人の炭素
質表面被膜を形成したSiCウィスカーに0.3〜1.
0重量%のB粉末を混合し、該混合物を不活性雰囲気中
で温度1950〜2100°C1圧力100kg/cm
2以上の条件でホットプレス焼結することを構成上の特
徴とする。In order to achieve the above object, the method for producing a high-strength porous SiC sintered body according to the present invention is based on SiC whiskers having a carbonaceous surface film formed thereon with a thickness of 0.3 to 1.0 mm.
0% by weight of B powder was mixed, and the mixture was heated in an inert atmosphere at a temperature of 1950-2100°C and a pressure of 100kg/cm.
The structural feature is that hot press sintering is performed under two or more conditions.
SiCウィスカーには、直径0.5〜2μm、長さ10
〜100μmのアスペクト性状を有する針状単結晶が用
いられる。このSiCウィスカーに炭素質表面被膜を形
成するには、例えばフェノール樹脂、フラン樹脂などの
炭化可能な熱硬化性樹脂の溶液中にSiCウィスカーを
分散させ、濾過、乾燥および樹脂硬化したのち非酸化性
雰囲気中で800〜1800″Cの温度に熱処理する方
法が適用される。この際、用いる熱硬化性樹脂の溶液濃
度、SiCウィスカーの攪拌混合時間などの条件を制御
することによって形成する炭素質被膜の厚さを20〜1
00人の範囲に調整することができる。SiC whiskers have a diameter of 0.5 to 2 μm and a length of 10
A needle-like single crystal having an aspect property of ~100 μm is used. To form a carbonaceous surface film on the SiC whiskers, the SiC whiskers are dispersed in a solution of a carbonizable thermosetting resin such as a phenolic resin or a furan resin, and after filtration, drying, and resin curing, a non-oxidizing A method of heat treatment at a temperature of 800 to 1800"C in an atmosphere is applied. At this time, the carbonaceous film is formed by controlling conditions such as the solution concentration of the thermosetting resin used and the stirring and mixing time of the SiC whiskers. The thickness of 20~1
It can be adjusted to a range of 00 people.
炭素質被膜の厚さを20〜100人に設定する理由は、
20人未満ではSiCウィスカーの熱変形が有効に防止
できず、また100人を越すと焼結性が減退するからで
ある。The reason why the thickness of the carbonaceous film is set to 20 to 100 is as follows.
This is because if there are less than 20 people, thermal deformation of the SiC whiskers cannot be effectively prevented, and if more than 100 people, sinterability will deteriorate.
炭素質表面被膜を形成したSiCウィスカーには、B粉
末が混合される。該B粉末は焼結助剤として機能するも
ので、望ましくは平均粒子径05μm以下の微粉として
SiCウィスカーに対し0.3〜1.0重量%の範囲で
混合する。この添加量が0.3重量%未満の場合には混
合効果が発揮されずに焼結不良が起き、他方1.0重量
%を土建ると余剰B成分がSiCウィスカーの結合界面
に残存していずれも強度低下の原因となる。B powder is mixed into the SiC whiskers on which the carbonaceous surface coating has been formed. The B powder functions as a sintering aid, and is preferably mixed as a fine powder with an average particle size of 05 μm or less in an amount of 0.3 to 1.0% by weight based on the SiC whisker. If the amount added is less than 0.3% by weight, the mixing effect will not be exhibited and poor sintering will occur, while if the amount added is 1.0% by weight, excess B component will remain at the bonding interface of the SiC whiskers. Both cause a decrease in strength.
SiCウィスカーとB粉末との混合は、例えば適宜な有
機溶媒と共にボールミル中で撹拌混合する方法を用い、
十分に均一になるまでおこなわれる。混合物は、引き続
き乾燥して焼結用素材とする。The SiC whiskers and the B powder are mixed, for example, by stirring and mixing in a ball mill with an appropriate organic solvent,
This is done until it is completely uniform. The mixture is subsequently dried to form a sintering material.
焼結処理はホットプレスによりおこない、焼結条件を不
活性雰囲気中、温度1950〜2100°C1圧力10
0kg/cm”以上に設定する。焼結系内を不活性雰囲
気に保持することはSiCウィスカーに形成された炭素
質表面被膜の酸化を防くために必要な条件である。また
、系内の雰囲気圧は常圧以上の加圧状態に保つことが好
ましく、真空または減圧系ではSiCうイスカーの変形
が昇華を伴って進行する結果を招く。焼結温度は、19
50°C未満であると焼結が円滑におこなわれず、21
00°Cを越えるとSiCウィスカーの再結晶化が激し
く進むため薄い炭素質表面被膜では変形を抑制し得なく
なる。また、焼結圧力が100kg/cm”を上廻る場
合にはSiCウィスカーに結合基点を形成することがで
きな(なり、焼結化が困難となる。したがって、焼結は
100kg/cm2以上の圧力域において所望の気孔率
になる圧力条件に調整しておこなわれる。The sintering process was carried out using a hot press, and the sintering conditions were: in an inert atmosphere, temperature 1950-2100°C, pressure 10°C.
0 kg/cm” or more. Maintaining the inside of the sintering system in an inert atmosphere is a necessary condition to prevent oxidation of the carbonaceous surface film formed on the SiC whiskers. It is preferable to maintain the atmospheric pressure at a pressure higher than normal pressure, and in a vacuum or reduced pressure system, the deformation of the SiC iscar will proceed with sublimation.The sintering temperature is 19
If the temperature is less than 50°C, sintering will not be carried out smoothly and 21
If the temperature exceeds 00°C, recrystallization of the SiC whiskers will proceed rapidly, so that a thin carbonaceous surface coating will not be able to suppress the deformation. Furthermore, if the sintering pressure exceeds 100 kg/cm2, bonding points cannot be formed in the SiC whiskers (and sintering becomes difficult. Therefore, sintering is performed at a pressure of 100 kg/cm2 or more. The pressure conditions are adjusted to achieve the desired porosity in the area.
[作 用]
本発明によれば、骨格成分として厚さ20〜100人の
炭素質表面被膜を形成したSiCウィスカーを用い、こ
れを少量の焼結助剤B粉末と混合したのち特定の条件で
ホットプレス焼結するプロセスが採られる。この過程で
、炭素質被膜は焼結時の変態劣化を効果的に抑制し、骨
格となるSiCウィスカー本来の高強度性と相俟って強
固な組織の形成化にを効機能する。SiCウィスカー相
互の結合は、焼結処理時に負荷される100kg/cm
2以上の加圧力でSiCウィスカー相互の接触界面にお
ける炭素質被膜が剥離し、あるいはSiCウィスカーが
折れることにより無数の結合基点が形成され、この結合
基点を介して焼結が進行するため極めて強固となる。[Function] According to the present invention, SiC whiskers on which a carbonaceous surface film with a thickness of 20 to 100 mm has been formed are used as a skeleton component, and after being mixed with a small amount of sintering aid B powder, the whiskers are heated under specific conditions. A hot press sintering process is used. In this process, the carbonaceous film effectively suppresses transformation deterioration during sintering, and together with the inherent high strength of the SiC whiskers serving as the skeleton, it functions to form a strong structure. Bonding between SiC whiskers is achieved by a load of 100 kg/cm during the sintering process.
The carbonaceous film at the contact interface between the SiC whiskers peels off or the SiC whiskers break under pressure of 2 or more, forming countless bonding points, and sintering progresses through these bonding points, making the product extremely strong. Become.
焼結後の組織は、微小繊維状のSiCウィスカーが結合
基点で結合した多孔質組織となるが、気孔率は主にホッ
トプレスの加圧条件によって調整することができる。The structure after sintering becomes a porous structure in which fine fibrous SiC whiskers are bonded together at bonding points, and the porosity can be adjusted mainly by the pressurizing conditions of the hot press.
(実施例) 以下、本発明を実施例に基づいて説明する。(Example) Hereinafter, the present invention will be explained based on examples.
実施例1
フェノール樹脂〔群栄化学■製、゛レジト・ノブPGA
−4508′“〕をエタノールに溶解して7日間静置し
、十分に均相化させた濃度の異なる樹脂溶液を作製した
。この溶液に平均直径0.4μm、平均長さ30μmの
SiCウィスカー〔東海カーボン■製、“″トーカウィ
スカー”]を分散して攪拌混合したのち、濾過、乾燥し
てエタノールを揮散除去した。ついで、170°Cの温
度に2時間加熱してフェノール樹脂を硬化し、引き続き
高周波炉に移してAr気流中、1000℃の温度に焼成
してSiCウィスカーの表面に厚さの異なる炭素質被膜
を形成した。Example 1 Phenol resin [manufactured by Gunei Chemical Co., Ltd., "Resito Nobu PGA"
-4508'"] was dissolved in ethanol and allowed to stand for 7 days to prepare fully homogenized resin solutions with different concentrations. SiC whiskers with an average diameter of 0.4 μm and an average length of 30 μm were added to this solution. "Toka Whisker" (manufactured by Tokai Carbon ■) was dispersed and mixed with stirring, followed by filtration and drying to volatilize and remove ethanol. Next, the phenol resin was cured by heating at a temperature of 170°C for 2 hours, and then transferred to a high frequency furnace and fired at a temperature of 1000°C in an Ar flow to form carbonaceous films of different thicknesses on the surface of the SiC whiskers. Formed.
炭素質被膜を形成した各SiCウィスカーに平均粒径0
.1μ麟の非晶質B粉末を0.7重量%の割合で混合し
、エタノール分散媒とともにボールミルに入れて20時
間回回転台した。Each SiC whisker with a carbonaceous film has an average particle size of 0.
.. 1 micron of amorphous B powder was mixed at a ratio of 0.7% by weight, and the mixture was placed in a ball mill with an ethanol dispersion medium and rotated for 20 hours.
形成された混合スラリーを濾過、乾燥してエタノール成
分を除去した。得られた混合物を焼結用素材としてその
各40gを黒鉛製モールドに充填し、系内をAr雰囲気
に保持しながら温度2050°C1圧力500kg/c
m”の条件によりホットプレス焼結をおこなった。The formed mixed slurry was filtered and dried to remove the ethanol component. The obtained mixture was used as a sintering material, and 40 g of each was filled into a graphite mold, and the temperature was 2050° C. and the pressure was 500 kg/c while maintaining the system in an Ar atmosphere.
Hot press sintering was carried out under the conditions of ``m''.
得られた各焼結体につき嵩密度および曲げ強度を測定し
、結果をSiCウィスカーの表面に形成した炭素質被膜
の厚さとの関係グラフとして第1図に示した。The bulk density and bending strength of each of the obtained sintered bodies were measured, and the results are shown in FIG. 1 as a graph of the relationship with the thickness of the carbonaceous film formed on the surface of the SiC whisker.
第1図から、炭素質表面被膜の厚さが20〜100人の
範囲にある場合には、約15%の気孔率を有し、300
MPaを越える曲げ強度を備える高強度性の多孔質Si
C焼結体が得られたが、炭素質被膜の厚さが20人未満
および100人を越す例では曲げ強度が極端に低くなる
ことが認められた。なお、10人未満の炭素質被膜の例
で形成されたSiC焼結体を顕微鏡観察したところSi
Cウィスカーは粒子状に変形していることがi認された
。From FIG. 1, when the thickness of the carbonaceous surface coating is in the range of 20 to 100%, it has a porosity of about 15% and 300%
High strength porous Si with bending strength exceeding MPa
Although a C sintered body was obtained, the bending strength was found to be extremely low in cases where the thickness of the carbonaceous coating was less than 20 or more than 100. In addition, when the SiC sintered body formed in the case of less than 10 carbonaceous coatings was observed under a microscope, it was found that Si
It was observed that the C whiskers were deformed into particles.
実施例2
実施例1の方法で形成した50人の炭素質表面被膜をも
つSiCウィスカーに実施例1と同一手段によりB粉末
を添加量を変えて混合し、焼結処理して多孔質SiC焼
結体を製造した。Example 2 50 SiC whiskers with a carbonaceous surface coating formed by the method of Example 1 were mixed with varying amounts of B powder by the same means as in Example 1, and sintered to form porous SiC. A body was produced.
得られた各SiC焼結体につき嵩密度および曲げ強度を
測定し、B粉末の添加量との関係をグラフにして第2図
に示した。The bulk density and bending strength of each SiC sintered body obtained were measured, and the relationship with the amount of B powder added is shown in a graph in FIG.
第2図の結果から、B粉末の添加量が0.3〜1.0重
量%の範囲では嵩密度は2.75g/cm3程度で安定
し、曲げ強度も300MPa以上を高強度域を保持する
が、B粉末添加量を0. 3重量%未満に落とすと嵩密
度、曲げ強度ともに上昇せず、一方、B粉末添加量が1
.0重量%を越すと曲げ強度が極端に低下することが判
る。From the results shown in Figure 2, when the amount of B powder added is in the range of 0.3 to 1.0% by weight, the bulk density is stable at about 2.75 g/cm3, and the bending strength remains in the high strength range of 300 MPa or more. However, if the amount of B powder added is 0. When the amount of B powder added is less than 3% by weight, neither the bulk density nor the bending strength increases.
.. It can be seen that when the content exceeds 0% by weight, the bending strength is extremely reduced.
実施例3
平均直径1μm、平均長さ40μ鯖のSiCウィスカー
に実施例1の方法を用いて厚さ50人の炭素質表面被膜
を形成した。このSiCウィスカーに実施例1と同一条
件で0.7重量%のB粉末を添加混合して焼結用素材を
作成し、これを温度および圧力条件を変えてホットプレ
ス焼結した。Example 3 A carbonaceous surface coating having a thickness of 50 μm was formed on SiC whiskers having an average diameter of 1 μm and an average length of 40 μm using the method of Example 1. A sintering material was prepared by adding and mixing 0.7% by weight of B powder to the SiC whiskers under the same conditions as in Example 1, and hot press sintered this material under different temperature and pressure conditions.
得られた各SiC焼結体の嵩密度および曲げ強度を測定
し、結果を適用した焼結条件と対比させて表1に示した
。The bulk density and bending strength of each SiC sintered body obtained were measured, and the results are shown in Table 1 in comparison with the applied sintering conditions.
表
本発明の要件を満たすRUN No、1〜5までは約1
5%の気孔率と300MPaを越す曲げ強度を示した。Table: RUN No. 1 to 5, which meet the requirements of the present invention, are approximately 1
It exhibited a porosity of 5% and a bending strength of over 300 MPa.
しかし、RUN No、6では温度が1950°Cを下
潮るため焼結が円滑に進行せず、嵩密度、曲げ強度とも
に低い、、RUN No、7は温度が2100°Cを第
1
図
炭素質表面被膜の厚さ
(人)
越えるため、曲げ強度が低下している。また、IIUN
No、8は圧力が低いために焼結化が進まず、曲げ強
度が低い。However, in RUN No. 6, the temperature drops below 1950°C, so sintering does not proceed smoothly, and the bulk density and bending strength are both low. In RUN No. 7, the temperature drops to 2100°C, so sintering does not proceed smoothly. The thickness of the surface coating (human) is exceeded, resulting in a decrease in bending strength. Also, IIUN
In No. 8, sintering did not proceed because the pressure was low, and the bending strength was low.
(発明の効果)
以上のとおり、本発明に従えば骨格原料に炭素質表面被
膜を形成したSiCウィスカーを用い、B粉末と混合し
て選択された条件でホントブレス焼結することによって
強度特性に優れる多孔質SIC焼結体を製造することが
できる。(Effects of the Invention) As described above, according to the present invention, strength properties are improved by using SiC whiskers with a carbonaceous surface coating formed on the skeletal raw material, mixing them with B powder, and real-breath sintering under selected conditions. An excellent porous SIC sintered body can be manufactured.
したがって、苛酷な環境下で使用される多孔組織の構造
部材として有用性が期待される。Therefore, it is expected to be useful as a porous structural member used in harsh environments.
第1図は実施例1におけるSiCウィスカーの炭素質被
膜の厚さとSjC焼結体の嵩密度および曲げ強度との関
係を示したグラフ、第2図は実施例2におけるB粉末の
添加量と嵩密度および曲げ強度との関係を示したグラフ
である。
出願人 東海カーボン株式会社
代理人 弁理士 高 畑 正 也
第2図
0.5 1.O
B粉末の添加量(重量%)Figure 1 is a graph showing the relationship between the thickness of the carbonaceous film of SiC whiskers and the bulk density and bending strength of the SjC sintered body in Example 1, and Figure 2 is a graph showing the relationship between the amount of B powder added and the bulk density in Example 2. It is a graph showing the relationship between density and bending strength. Applicant Tokai Carbon Co., Ltd. Agent Patent Attorney Masaya Takahata Figure 2 0.5 1. Amount of O B powder added (wt%)
Claims (1)
iCウィスカーに0.3〜1.0重量%のB粉末を混合
し、該混合物を不活性雰囲気中で温度1950〜210
0℃、圧力100kg/cm^2以上の条件でホットプ
レス焼結することを特徴とする高強度多孔質SiC焼結
体の製造方法。1. S with a carbonaceous surface coating of 20 to 100 Å thick
0.3-1.0 wt% B powder is mixed with iC whiskers, and the mixture is heated in an inert atmosphere at a temperature of 1950-210°C.
A method for producing a high-strength porous SiC sintered body, comprising hot press sintering at 0° C. and a pressure of 100 kg/cm^2 or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146090A JPH0412072A (en) | 1990-04-26 | 1990-04-26 | Production of high-strength porous sic sintered material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146090A JPH0412072A (en) | 1990-04-26 | 1990-04-26 | Production of high-strength porous sic sintered material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0412072A true JPH0412072A (en) | 1992-01-16 |
Family
ID=14561799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11146090A Pending JPH0412072A (en) | 1990-04-26 | 1990-04-26 | Production of high-strength porous sic sintered material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0412072A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419780B1 (en) * | 2001-02-23 | 2004-02-21 | 한국에너지기술연구원 | Fabrication method of silicon carbide ceramics filter with coating layer |
-
1990
- 1990-04-26 JP JP11146090A patent/JPH0412072A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419780B1 (en) * | 2001-02-23 | 2004-02-21 | 한국에너지기술연구원 | Fabrication method of silicon carbide ceramics filter with coating layer |
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