JPH04115529A - Washing method and device - Google Patents

Washing method and device

Info

Publication number
JPH04115529A
JPH04115529A JP23655490A JP23655490A JPH04115529A JP H04115529 A JPH04115529 A JP H04115529A JP 23655490 A JP23655490 A JP 23655490A JP 23655490 A JP23655490 A JP 23655490A JP H04115529 A JPH04115529 A JP H04115529A
Authority
JP
Japan
Prior art keywords
liquid
cleaning
opening
cleaning liquid
suction pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23655490A
Other languages
Japanese (ja)
Inventor
Masataka Kase
正隆 加勢
Masanori Kobayashi
正典 小林
Tadayoshi Yoshikawa
忠義 吉川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Fujitsu Integrated Microtechnology Ltd
Original Assignee
Fujitsu Ltd
Fujitsu Integrated Microtechnology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Fujitsu Integrated Microtechnology Ltd filed Critical Fujitsu Ltd
Priority to JP23655490A priority Critical patent/JPH04115529A/en
Publication of JPH04115529A publication Critical patent/JPH04115529A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent whirls within a washing liquid from being produced without increasing flow of supplied washing liquid and foreign objects which float on a surface of the washing liquid from stagnating by placing a liquid-absorbing pipe near a surface within the washing liquid and then discharging one part of the washing liquid using the liquid-absorbing pipe. CONSTITUTION:An upper side of a washing tank 1 is overflown due to supply of a washing liquid 2 from a lower side continuously through a flowing-in hole 1a which is provided on a bottom surface and then a semiconductor wafer W is buried and dipped into the inside washing liquid 2. A liquid-absorbing pipe 3 is placed near a surface within the liquid at any location on the surface of the washing liquid 2 within the washing tank 1 with an opening 3a facing downward and absorbs one part of the washing liquid 2 and then discharges it, thus preventing whirls within the washing liquid from being produced even without increasing flow of the supplied washing liquid and foreign objects which float on a surface of the washing liquid from stagnating.

Description

【発明の詳細な説明】 〔概 要〕 洗浄方法及び洗浄装置に係り、特に、主面をほぼ垂直に
し該主面が重なる方向に間隔をおいて並列に配列した複
数の薄板状体を洗浄槽内の洗浄液に埋没浸漬して行われ
る、該薄板状体例えば半導体ウェーハの洗浄に関し、 洗浄槽から洗浄液をオーバーフローさせながら行うもの
として、洗浄液の供給流量を大きくしなくとも、洗浄液
中の渦の発生や洗浄液表面に浮上した異物の停滞が生じ
ないようにさせることを目的とし、 端部開口から液を吸入する吸液管または端部開口から液
を流出する給液管の該開口を下向きにして洗浄槽内の洗
浄液の液中表面近傍に配置して、該吸液管により該洗浄
液の一部を排出する、または該給液管から該洗浄液中に
該洗浄液と同質の洗浄液を流出するように構成する。
[Detailed Description of the Invention] [Summary] It relates to a cleaning method and a cleaning device, and particularly relates to a cleaning tank in which a plurality of thin plate-shaped bodies whose principal surfaces are substantially vertical and which are arranged in parallel at intervals in a direction in which the principal surfaces overlap. When cleaning a thin plate-like object, such as a semiconductor wafer, by immersing it in a cleaning solution, the process is performed while the cleaning solution overflows from the cleaning tank. For the purpose of preventing stagnation of foreign matter floating on the surface of the cleaning liquid, the opening of the liquid suction pipe that sucks liquid from the end opening or the liquid supply pipe that flows out the liquid from the end opening is directed downward. Disposed near the surface of the cleaning liquid in the cleaning tank, so that a part of the cleaning liquid is discharged through the liquid suction pipe, or a cleaning liquid of the same quality as the cleaning liquid is discharged from the liquid supply pipe into the cleaning liquid. Configure.

〔産業上の利用分野〕[Industrial application field]

本発明は、洗浄方法及び洗浄装置に係り、特に、主面を
ほぼ垂直にし該主面が重なる方向に間隔をおいて並列に
配列した複数の薄板状体を洗浄槽内の洗浄液に埋没浸漬
して行われる、該薄板状体例えば半導体ウェーハの洗浄
に関する。
The present invention relates to a cleaning method and a cleaning device, and more particularly, the present invention relates to a cleaning method and a cleaning device, and in particular, a plurality of thin plate-like bodies arranged in parallel at intervals in a direction in which the major surfaces are substantially vertical and the major surfaces overlap are immersed in a cleaning liquid in a cleaning tank. The present invention relates to cleaning of the thin plate-like object, such as a semiconductor wafer.

半導体装置の製造では半導体ウェーハの洗浄工程があり
、その洗浄は、工程単価削減のため20〜30枚のウェ
ーハをキャリアと称する枠状保持具で上記配列に保持し
、キャリアと共に洗浄槽内の洗浄液に埋没浸漬して行う
。そして、洗浄液には、表面酸化膜を除去するHF/H
2Oなどの薬液やその薬液を除去する純粋水(純水)が
用いられる。何れの場合も除去対象物かむらな(除去さ
れ且つ表面に塵のような異物が付着しないようにするこ
とが重要である。
In the manufacturing of semiconductor devices, there is a cleaning process for semiconductor wafers.In order to reduce the unit cost of the process, 20 to 30 wafers are held in the above arrangement using a frame-shaped holder called a carrier, and cleaning liquid in a cleaning tank is used together with the carrier. This is done by immersing it in water. The cleaning solution includes HF/H to remove the surface oxide film.
A chemical solution such as 2O or pure water from which the chemical solution is removed is used. In either case, it is important to ensure that the object to be removed is removed and that foreign matter such as dust does not adhere to the surface.

〔従来の技術〕[Conventional technology]

第3図は上述した洗浄を行う装置従来例の模式断面図で
ある。
FIG. 3 is a schematic sectional view of a conventional example of an apparatus for performing the above-mentioned cleaning.

同図において、■は洗浄槽であり、洗浄槽lは、底面に
設けた流入穴1aを通して洗浄液2が下側から連続的に
供給されて上側でオーバーフローし、内部の洗浄液2に
半導体ウェーハWを埋没浸漬させる。ウェーハWは、先
に述べたように、複数のものが主面をほぼ垂直にし該主
面が重なる方向に間隔をおいて並列に配列した状態にキ
ャリアで保持されて、キャリアと共に浸漬される。ここ
ではキャリアの図示を省略しである。
In the same figure, ■ is a cleaning tank, and in the cleaning tank l, cleaning liquid 2 is continuously supplied from the bottom through an inflow hole 1a provided at the bottom and overflows at the top, and the semiconductor wafer W is poured into the cleaning liquid 2 inside. Bury and immerse. As described above, the wafers W are held by a carrier in a state in which a plurality of wafers are arranged in parallel with their main surfaces substantially perpendicular and at intervals in the direction in which the main surfaces overlap, and are immersed together with the carrier. Here, illustration of the carrier is omitted.

この洗浄では、ウェーハW相互の間やウェーハW群の外
側を下から上に向かって連続的に通り抜ける洗浄液2が
、ウェーハWの表面を撫でて洗浄効果を発揮する。
In this cleaning, the cleaning liquid 2 continuously passes between the wafers W and the outside of the group of wafers from bottom to top, strokes the surfaces of the wafers W, and exerts a cleaning effect.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、このやり方の洗浄では、ウェーハWが時
流に従って大型になると、洗浄槽1が大きくなって洗浄
液2か相対的にウェーハW群の外側を多く流れるように
なり、第3図に示すように、洗浄液2の内部で渦2aが
また洗浄液2の表面で淀み2bが発生する。
However, in this method of cleaning, as the wafers W become larger according to the current trends, the cleaning tank 1 becomes larger and relatively more of the cleaning liquid 2 flows outside the group of wafers W, as shown in FIG. A vortex 2a is generated inside the cleaning liquid 2, and a stagnation 2b is generated on the surface of the cleaning liquid 2.

この渦2aは洗浄にむらを生じさせる。また、淀み2b
は、ウェーハWに付着していたりウェーハWとキャリア
との擦れなどによって発生したりして浮上した塵状の異
物りを呼び込んで、異物りが洗浄液2のオーバーフロー
と共に流出するのを阻害する。そして、洗浄液2の表面
に浮いて停滞した異物りは、ウェーハWを洗浄液2から
引き上げる際にウェーハWに付着して、洗浄結果の品質
を劣化させる。
This vortex 2a causes uneven cleaning. Also, stagnation 2b
attracts dust-like foreign matter adhering to the wafer W or floating up due to friction between the wafer W and the carrier, and prevents the foreign matter from flowing out together with the overflow of the cleaning liquid 2. The foreign particles floating and stagnant on the surface of the cleaning liquid 2 adhere to the wafer W when the wafer W is pulled up from the cleaning liquid 2, deteriorating the quality of the cleaning result.

このような洗浄のむらや異物りの付着を防止するために
は、渦2aの発生や浮上した異物りの停滞が生じないよ
うに洗浄槽Iに供給する洗浄液2の流量を増やしてやれ
ばよいが、そのために必要とする供給流量が極めて大き
なものとなる。
In order to prevent such uneven cleaning and adhesion of foreign matter, the flow rate of the cleaning liquid 2 supplied to the cleaning tank I should be increased to prevent the generation of vortices 2a and the stagnation of floating foreign matter. Therefore, the required supply flow rate becomes extremely large.

そこで本発明は、上述のような洗浄において、洗浄液の
供給流量を大きくしなくとも、渦2aのような渦の発生
や異物りのような浮上した異物の停滞が生じないように
させる洗浄方法と洗浄装置の提供を目的とする。
Therefore, the present invention provides a cleaning method that prevents the generation of vortices such as the vortex 2a and the stagnation of floating foreign matter such as foreign matter particles, without increasing the supply flow rate of the cleaning liquid in the above-mentioned cleaning. The purpose is to provide cleaning equipment.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するために、本発明の洗浄方法において
は、主面をほぼ垂直にし該主面が重なる方向に間隔をお
いて並列に配列した複数の薄板状体を洗浄槽内の洗浄液
に埋没浸漬して、該薄板状体の洗浄を行うに際して、前
記洗浄槽では洗浄液を下側から供給して連続的にオーバ
ーフローさせながら、端部開口から液を吸入する吸液管
の該開口を下向きにして該洗浄液の液中表面近傍に配置
して、該洗浄液の一部を該吸液管により排出することを
特徴としている。その場合、前記開口を配置する箇所は
、前記洗浄液が表面で淀む箇所であることが望ましい。
In order to achieve the above object, in the cleaning method of the present invention, a plurality of thin plate-shaped bodies whose principal surfaces are substantially vertical and which are arranged in parallel at intervals in a direction in which the principal surfaces overlap are buried in a cleaning liquid in a cleaning tank. When cleaning the thin plate-like body by immersion, the cleaning liquid is supplied from below in the cleaning tank and continuously overflows, while the opening of the liquid suction pipe that sucks the liquid from the end opening is directed downward. The cleaning liquid is disposed near the surface of the cleaning liquid, and a portion of the cleaning liquid is discharged through the liquid suction pipe. In that case, it is desirable that the openings be located at locations where the cleaning liquid stagnates on the surface.

若しくは、この洗浄方法において、前記吸液管を端部開
口から液を流出する給液管に代えて、前記洗浄液の一部
を排出する代わりに、該洗浄液中に該洗浄液と同質の洗
浄液を流出するようにしても良い。その場合、前記洗浄
液の流出は、間欠的または脈動的に行うことが望ましい
Alternatively, in this cleaning method, the liquid suction pipe is replaced with a liquid supply pipe that drains the liquid from the end opening, and instead of discharging a part of the cleaning liquid, a cleaning liquid of the same quality as the cleaning liquid is discharged into the cleaning liquid. You may also do this. In that case, it is desirable that the cleaning liquid be discharged intermittently or in a pulsating manner.

また、洗浄装置においては、洗浄槽と吸液管とを有し、
該洗浄槽は、洗浄液が下側から連続的に供給されてオー
バーフローし、該洗浄液に被洗浄物を埋没浸漬させるも
のであり、該吸液管は、端部開口から液を吸入する機能
を有して、該開口を下向きにして該洗浄液の液中表面近
傍に配置する、または該洗浄槽上から退避することが随
時に可能であり、該開口を該洗浄液中に配置した際に該
洗浄液の一部を吸入して排出するものであることを特徴
としている。
In addition, the cleaning device has a cleaning tank and a liquid suction pipe,
In the cleaning tank, cleaning liquid is continuously supplied from the bottom and overflows, and the object to be cleaned is submerged and immersed in the cleaning liquid, and the liquid suction pipe has a function of sucking the liquid from the opening at the end. It is possible at any time to place the opening facing downward near the surface of the cleaning liquid, or to evacuate it from above the cleaning tank, and when the opening is placed in the cleaning liquid, the cleaning liquid It is characterized by being inhaled and expelled in part.

若しくは、この洗浄装置において、前記吸液管に代えて
給液管を有し、該給液管は、該吸液管の端部開口から液
を吸入する機能に代えて端部開口から液を流出する機能
を有し、該開口を前記洗浄液中に配置した際に該洗浄液
と同質の洗浄液を流出するものであるようにしても良い
。その場合、前記給液管は、前記洗浄液の流出を間欠的
または脈動的に行うことが可能なものであることが望ま
しい。
Alternatively, in this cleaning device, a liquid supply pipe is provided instead of the liquid suction pipe, and the liquid supply pipe has a function of sucking liquid from the end opening of the liquid suction pipe. The opening may have a function of flowing out, and when the opening is placed in the cleaning liquid, a cleaning liquid having the same quality as the cleaning liquid may flow out. In that case, it is desirable that the liquid supply pipe is capable of causing the cleaning liquid to flow out intermittently or in a pulsating manner.

〔作 用〕[For production]

第3図で説明した渦2aの発生と浮上した異物りの停滞
は、洗浄液2の供給流量が小さい際に、洗浄液2の一部
が表面部でオーバーフローと反対側に流れて淀み2bの
ところで液中に潜り込むために生じている。
The generation of the vortex 2a and the stagnation of floating foreign matter explained in FIG. 3 are caused by the fact that when the supply flow rate of the cleaning liquid 2 is small, part of the cleaning liquid 2 flows to the opposite side of the overflow at the surface, and the liquid stagnates at the stagnation 2b. It is created to crawl inside.

本発明は、この点に着目し、■とじて洗浄液の上記潜り
込みが無くなるようにする、または、■とじて洗浄液の
表面部の流れがすべてオーバーフローの方に向かうよう
にする措置を講じて、洗浄液の供給流量を大きくしなく
とも、渦2aのような渦の発生や異物りのような浮上し
た異物の停滞が生じないようにさせたものであり、洗浄
方法または洗浄装置における上記吸液管が上記■を実現
させ、上記給液管が上記■を実現させている。
The present invention focuses on this point, and takes measures to prevent the cleaning liquid from penetrating by (1) closing the cleaning liquid to eliminate the above-mentioned penetration of the cleaning liquid, or (2) ensuring that the flow of the cleaning liquid at the surface area is entirely directed toward the overflow. This prevents the generation of vortices such as vortex 2a and the stagnation of floating foreign matter such as foreign matter particles, even without increasing the supply flow rate. The above item (2) is realized, and the liquid supply pipe realizes the above item (2).

そして、吸液管または給液管の上記開口を洗浄液中表面
近傍に配置する箇所は、洗浄液が表面で淀む箇所が明ら
かに最も効果的であり、そこから多少はずれても十分な
効果を得ることができる。
The location where the opening of the liquid suction pipe or liquid supply pipe is placed close to the surface of the cleaning liquid is clearly most effective in the area where the cleaning liquid stagnates on the surface, and even if the opening is deviated from this position, sufficient effects can still be obtained. I can do it.

また、給液管からの洗浄液の流出を間欠的または脈動的
に行うと、洗浄槽内の洗浄液の流れが揺さぶられて洗浄
のむらが一層低減する。
Further, when the cleaning liquid is discharged from the liquid supply pipe intermittently or in a pulsating manner, the flow of the cleaning liquid in the cleaning tank is shaken, and the unevenness of cleaning is further reduced.

なお、洗浄装置において吸液管または給液管を該洗浄槽
上から退避し得るようにしたのは、洗浄槽に対する被洗
浄物(洗浄方法における薄板状体)の出し入れの際に、
吸液管または給液管が邪魔にならないようにするためで
ある。
The reason why the liquid suction pipe or the liquid supply pipe in the cleaning device can be retracted from the top of the cleaning tank is because when the object to be cleaned (thin plate-like object in the cleaning method) is taken in and out of the cleaning tank,
This is to prevent the liquid suction pipe or liquid supply pipe from getting in the way.

〔実施例〕〔Example〕

以下本発明の実施例について第1図、第2図を用いて説
明する。第1図は方法第1実施例を行う装置第1実施例
の模式断面図、第2図は方法第2実施例を行う装置第2
実施例の模式断面図、であり、全図を通し同一符号は同
一対象物を示す。
Embodiments of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a schematic sectional view of the first embodiment of the apparatus for carrying out the first embodiment of the method, and FIG. 2 is a schematic sectional view of the second embodiment of the apparatus for carrying out the second embodiment of the method.
This is a schematic cross-sectional view of an example, and the same reference numerals indicate the same objects throughout the drawings.

第1図において、この装置第1実施例となる洗浄装置は
、第3図で述べた装置従来例に吸液管3を付加したもの
である。
In FIG. 1, the first embodiment of the cleaning device is obtained by adding a liquid suction pipe 3 to the conventional device described in FIG.

吸液管3は、端部開口3aから液を吸入する機能を有し
て、開口3aを下向きにして洗浄槽1内の洗浄液2の表
面任意箇所における液中表面近傍に配置する、または洗
浄槽l上から退避することが随時に可能であり、開口3
aを洗浄液2中に配置した際に洗浄液2の一部を吸入し
て排出するものである。開口3aの上記配置や吸液管3
の上記退避は、吸液管3に設けられた不図示の調節機構
による矢印A、B、C方向の移動で行う。
The liquid suction pipe 3 has a function of sucking liquid from an end opening 3a, and is arranged near the submerged surface of the cleaning liquid 2 in the cleaning tank 1 at an arbitrary location with the opening 3a facing downward; It is possible to retreat from above at any time, and the opening 3
When a is placed in the cleaning liquid 2, a part of the cleaning liquid 2 is sucked in and discharged. The above arrangement of the opening 3a and the liquid suction pipe 3
The above-mentioned retraction is performed by movement in the directions of arrows A, B, and C by an adjustment mechanism (not shown) provided in the liquid suction pipe 3.

そして、この洗浄装置を用いた洗浄方法の実施例(方法
第1実施例)は、次のようである。
An example of a cleaning method using this cleaning device (method example 1) is as follows.

即ちこの実施例は、上部開口の大きさが30cm角の洗
浄槽1を用いて8インチサイズのウェーハWを純水洗浄
する場合であり、先に述べた淀み2bが洗浄液2表面の
中心部に発生することから、吸液管3の開口3aの配置
箇所を該中心部にして以下の条件で行った。
That is, in this embodiment, an 8-inch wafer W is cleaned with pure water using a cleaning tank 1 whose upper opening is 30 cm square, and the stagnation 2b mentioned above is in the center of the surface of the cleaning liquid 2. Therefore, the opening 3a of the liquid suction tube 3 was placed at the center, and the test was carried out under the following conditions.

開口3aの液表面からの深さ :約10mm洗浄槽1へ
の洗浄液供給流量:20A/分吸液管3による液吸入流
量 : 51/分洗浄時間         :10分 そこでは洗浄液2の表面に先に述べた異物りの停滞が目
視で認められず、洗浄結果は洗浄むらがなく異物りの付
着も顕微鏡観察でウェーハW当たり10個以下であった
Depth of opening 3a from liquid surface: Approximately 10 mm Cleaning liquid supply flow rate to cleaning tank 1: 20 A/min Liquid suction flow rate through liquid suction pipe 3: 51/min Cleaning time: 10 minutes There, the cleaning liquid 2 is first applied to the surface. The aforementioned stagnation of foreign matter was not visually observed, the cleaning result was even, and the amount of foreign matter attached was less than 10 per wafer W by microscopic observation.

ちなみに、実施例から吸液管3を外すと、異物りの停滞
が認められて、異物りの付着がウェーハW当たり100
個程度光生し、また、吸液管3を外した状態で異物りの
停滞を消失させようとすると、洗浄液の供給流量は実施
例の約2倍程度を必要とした。
Incidentally, when the liquid suction tube 3 was removed from the example, stagnation of foreign matter was observed, and the amount of foreign matter adhesion decreased to 100% per wafer W.
In addition, in order to eliminate the stagnation of foreign matter with the liquid suction tube 3 removed, the supply flow rate of the cleaning liquid needed to be about twice that of the example.

そして、実施例の場合の洗浄液2の流れ状態を知るため
に、供給する洗浄液2に微小粉末を分散混入し洗浄槽1
の横方向から光を照射して観察したところ、洗浄液2の
流れは第1図に示すように先に述べた渦2aが発生しな
い状態となっていた。
In order to know the flow state of the cleaning liquid 2 in the case of the example, fine powder was dispersed and mixed into the cleaning liquid 2 to be supplied to the cleaning tank 1.
When observed by irradiating light from the lateral direction, the flow of the cleaning liquid 2 was in a state where the above-mentioned vortex 2a was not generated, as shown in FIG.

更に、この実施例において、開口3aの液表面からの深
さを1〜20mm程度の範囲で種々変化させてみたがミ
何れの場合も上述と同様な結果が得られた。また、開口
3aの配置箇所を洗浄液2の中心部から多少ずらせても
同様な結果が得られた。
Further, in this example, the depth of the opening 3a from the liquid surface was varied in a range of about 1 to 20 mm, but the same results as described above were obtained in all cases. Furthermore, similar results were obtained even if the location of the opening 3a was slightly shifted from the center of the cleaning liquid 2.

次に第2図において、この装置第2実施例となる洗浄装
置は、第3図で述べた装置従来例に給液管4を付加した
ものである。
Next, in FIG. 2, a second embodiment of the cleaning device is obtained by adding a liquid supply pipe 4 to the conventional device described in FIG.

給液管4は、端部開口4aから液を流出する機能を有し
て、先の吸液管3と同様に、開口4aを下向きにして洗
浄槽l内の洗浄液2の表面任意箇所における液中表面近
傍に配置する、または洗浄槽l上から退避することが随
時に可能であり、開口4aを洗浄液2中に配置した際に
別途の洗浄液2を流出し、その流出を間欠的または脈動
的に行うこともできるものである。開口4aの上記配置
や給液管4の上記退避は、吸液管3と同様に不図示の調
節機構による矢印A、B、C方向の移動で行う。
The liquid supply pipe 4 has a function of flowing out the liquid from the end opening 4a, and, like the liquid suction pipe 3 described above, the liquid supply pipe 4 has the function of flowing out the liquid from the end opening 4a. It can be placed near the inner surface or evacuated from above the cleaning tank l at any time. It can also be done. The above-mentioned arrangement of the opening 4a and the above-mentioned retraction of the liquid supply pipe 4 are performed by movement in the directions of arrows A, B, and C by an adjustment mechanism (not shown), similarly to the liquid suction pipe 3.

そして、この洗浄装置を用いた洗浄方法の実施例(方法
第2実施例)は、次のようである。
An example of a cleaning method (second example of the method) using this cleaning device is as follows.

即ちこの実施例は、先の第1実施例と同様に、上部開口
の大きさが30cm角の洗浄槽1を用いて8インチサイ
ズのウェーハWを純水洗浄する場合であり、先に述べた
淀み2bが洗浄液2表面の中心部に発生することから、
給液管4の開口4aの配置箇所を該中心部にして以下の
条件で行った。
That is, in this embodiment, as in the first embodiment, an 8-inch wafer W is cleaned with pure water using a cleaning tank 1 whose upper opening is 30 cm square. Since the stagnation 2b occurs in the center of the surface of the cleaning liquid 2,
The test was carried out under the following conditions, with the opening 4a of the liquid supply pipe 4 arranged at the center.

開口4aの液表面からの深さ :約10 mm洗洗浄槽
への洗浄液供給流量:2OA/分給液管4からの液流出
形態 :間欠的流出(流出10秒、休止 5秒) 同上液流出時の流量    : 51/分洗浄時間  
       :10分 そこでは洗浄液2の表面に先に述べた異物りの停滞が目
視で認められず、洗浄結果は洗浄むらがなく異物りの付
着も顕微鏡観察でウェーハW当たり10個以下であった
Depth of opening 4a from liquid surface: Approximately 10 mm Flow rate of cleaning liquid supplied to washing tank: 2OA/min Liquid outflow form from liquid supply pipe 4: Intermittent outflow (outflow 10 seconds, pause 5 seconds) Same as above liquid outflow Hourly flow rate: 51/min cleaning time
: 10 minutes At that time, no stagnation of the foreign particles mentioned above was visually observed on the surface of the cleaning solution 2, and the cleaning results showed that there was no uneven cleaning and the number of foreign particles attached was less than 10 per wafer W by microscopic observation.

いうまでもなく、この実施例から給液管4を外した際に
は、先の第1実施例で吸液管3を外した際と同様になる
Needless to say, when the liquid supply pipe 4 is removed from this embodiment, it is the same as when the liquid suction pipe 3 is removed in the first embodiment.

そして、この実施例の場合の洗浄液2の流れ状態を知る
ために、第1実施例の場合と同様な観察をしたところ、
洗浄液2の流れは第2図に示すように先に述べた渦2a
が発生しない状態となっていた。
In order to find out the flow state of the cleaning liquid 2 in this example, we made the same observation as in the first example.
The flow of the cleaning liquid 2 is as shown in FIG.
was not occurring.

更に、この実施例において、給液管4からの液流出形態
を、連続的流出(流量は上記流出時の流量と同じ)、ま
たは脈動的流出(上記休止を201/分の流出)に変え
てみたが、何れの場合も上述と同様な結果が得られた。
Furthermore, in this embodiment, the liquid outflow form from the liquid supply pipe 4 is changed to continuous outflow (the flow rate is the same as the flow rate at the time of outflow described above) or pulsating outflow (the above-mentioned pause is changed to outflow of 201/min). In both cases, the same results as above were obtained.

しかし、間欠的流出または脈動的流出は、洗浄槽I内の
洗浄液2の流れを揺さぶるので、現状の検出能力で判定
困難な領域であるが原理的に洗浄むらを一層低減させる
However, intermittent outflow or pulsating outflow shakes the flow of the cleaning liquid 2 in the cleaning tank I, and although this is an area that is difficult to determine with the current detection ability, in principle it can further reduce uneven cleaning.

また、開口4aの液表面からの深さを1〜20mm程度
の範囲で種々変化させてみたが、何れの場合も上述と同
様な結果が得られ、更に、開口3aの配置箇所を洗浄液
2の中心部から多少ずらせても同様な結果か得られた。
In addition, we tried varying the depth of the opening 4a from the liquid surface in a range of about 1 to 20 mm, but the same results as above were obtained in each case. Similar results were obtained even if the image was shifted slightly from the center.

なお、上述の実施例では吸液管3または給液管4を一つ
にし条件を特定して説明したが、淀み2bの発生箇所が
複数となる場合には吸液管3または給液管4を複数にす
ることが有効であり、条件は実施例に限定されることな
(適宜になし得るものである。また、実施例では半導体
ウェーハWを被洗浄物にしたが、この被洗浄物は薄板状
体であるならば半導体ウェーハW以外のものであっても
同様の結果が得られる。
In the above-mentioned embodiment, the liquid suction pipe 3 or the liquid supply pipe 4 is used as one and the conditions are specified. However, if the stagnation 2b occurs at multiple locations, It is effective to use a plurality of conditions, and the conditions are not limited to those in the example (they can be changed as appropriate.Also, in the example, the semiconductor wafer W was used as the object to be cleaned, but the object to be cleaned could be Similar results can be obtained with a thin plate-like body other than the semiconductor wafer W.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、主面をほぼ垂直に
し該主面が重なる方向に間隔をおいて並列に配列した複
数の薄板状体を洗浄槽内の洗浄液に埋没浸漬して行われ
る、該薄板状体例えば半導体ウェーハの洗浄に関して、
洗浄槽から洗浄液をオーバーフローさせながら行うもの
として、洗浄液の供給流量を大きくしな(とも、洗浄液
中の渦の発生や洗浄液表面に浮上した異物の停滞が生じ
ないようにさせる洗浄方法と洗浄装置が提供されて、洗
浄結果を高品質に確保しながら洗浄液使用量の低減を可
能にさせる効果がある。
As explained above, according to the present invention, a plurality of thin plate-like bodies whose principal surfaces are substantially vertical and which are arranged in parallel at intervals in the direction in which the principal surfaces overlap are immersed in a cleaning solution in a cleaning tank. , regarding cleaning of the thin plate-like object, such as a semiconductor wafer,
The cleaning method and cleaning equipment must be used to overflow the cleaning liquid from the cleaning tank, so that the supply flow rate of the cleaning liquid must be increased (in addition, the cleaning method and cleaning equipment must be designed to prevent the generation of vortices in the cleaning liquid and the stagnation of foreign particles floating on the surface of the cleaning liquid). This has the effect of making it possible to reduce the amount of cleaning liquid used while ensuring high quality cleaning results.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は方法第1実施例を行う装置第1実施例の模式断
面図、 第2図は方法第2実施例を行う装置第2実施例の模式断
面図、 第3図は装置従来例の模式断面図、 である。図において、 ■は洗浄槽、 1aは流入穴、 2i洗浄液、 2aは渦、 2bは淀み、 3は吸液管、 4は給液管、 3a、 4aは端部開口、 A、B、Cは調節移動方向、 Dは異物、 Wは半導体ウェーハ、 である。 1;+fC,浮槽 2洗浄液 3α皓胡開口 vv″+導体つL−ハ αjた入代 3吸巌管 A、B、C′6周節移動力薗 方;敷藁 1 lこ〃牧イ?1 をイ〒っ)(J1〕占
 1 寛旅イア10糧賛(断dbしろ¥  1121
Fig. 1 is a schematic sectional view of the first embodiment of the apparatus for carrying out the first embodiment of the method, Fig. 2 is a schematic sectional view of the second embodiment of the apparatus for carrying out the second embodiment of the method, and Fig. 3 is a conventional example of the apparatus. This is a schematic cross-sectional view. In the figure, ■ is the cleaning tank, 1a is the inflow hole, 2i is the cleaning liquid, 2a is the vortex, 2b is the stagnation, 3 is the liquid suction pipe, 4 is the liquid supply pipe, 3a and 4a are the end openings, and A, B, and C are the The direction of adjustment movement, D is the foreign object, and W is the semiconductor wafer. 1; +fC, floating tank 2 cleaning liquid 3α 紓 口 vv″ + conductor L-αj input 3 suction tubes A, B, C′ 6 circumferential movement force 薗 1; ?1 〒っ) (J1) Fortune-telling 1 Kantabi Ia 10 Provisions (Dan db ¥ 1121

Claims (1)

【特許請求の範囲】 1)主面をほぼ垂直にし該主面が重なる方向に間隔をお
いて並列に配列した複数の薄板状体を洗浄槽内の洗浄液
に埋没浸漬して、該薄板状体の洗浄を行うに際して、 前記洗浄槽では洗浄液を下側から供給して連続的にオー
バーフローさせながら、 端部開口から液を吸入する吸液管の該開口を下向きにし
て該洗浄液の液中表面近傍に配置して、該洗浄液の一部
を該吸液管により排出することを特徴とする洗浄方法。 2)前記開口を配置する箇所は、前記洗浄液が表面で淀
む箇所であることを特徴とする請求項1に記載の洗浄方
法。 3)請求項1または2に記載の洗浄方法において、 前記吸液管を端部開口から液を流出する給液管に代えて
、前記洗浄液の一部を排出する代わりに、該洗浄液中に
該洗浄液と同質の洗浄液を流出することを特徴とする洗
浄方法。 4)前記洗浄液の流出は、間欠的または脈動的に行うこ
とを特徴とする請求項3に記載の洗浄方法。 5)洗浄槽と吸液管とを有し、 該洗浄槽は、洗浄液が下側から連続的に供給されてオー
バーフローし、該洗浄液に被洗浄物を埋没浸漬させるも
のであり、 該吸液管は、端部開口から液を吸入する機能を有して、
該開口を下向きにして該洗浄液の液中表面近傍に配置す
る、または該洗浄槽上から退避することが随時に可能で
あり、該開口を該洗浄液中に配置した際に該洗浄液の一
部を吸入して排出するものであることを特徴とする洗浄
装置。 6)請求項5に記載の洗浄装置において、前記吸液管に
代えて給液管を有し、 該給液管は、該吸液管の端部開口から液を吸入する機能
に代えて端部開口から液を流出する機能を有し、該開口
を前記洗浄液中に配置した際に該洗浄液と同質の洗浄液
を流出するものであることを特徴とする洗浄装置。 7)前記給液管は、前記洗浄液の流出を間欠的または脈
動的に行うことが可能なものであることを特徴とする請
求項6に記載の洗浄装置。
[Scope of Claims] 1) A plurality of thin plate-like bodies whose principal surfaces are substantially vertical and arranged in parallel at intervals in the direction in which the principal surfaces overlap are immersed in a cleaning solution in a cleaning tank, and the thin plate-like bodies are immersed in a cleaning solution in a cleaning tank. When cleaning, in the cleaning tank, the cleaning liquid is supplied from below and continuously overflows, while the opening of the liquid suction pipe that sucks the liquid from the end opening faces downward and near the submerged surface of the cleaning liquid. A cleaning method characterized in that the cleaning liquid is disposed in a vacuum cleaner and a part of the cleaning liquid is discharged through the liquid suction pipe. 2) The cleaning method according to claim 1, wherein the opening is arranged at a location where the cleaning liquid stagnates on the surface. 3) In the cleaning method according to claim 1 or 2, the liquid suction pipe is replaced with a liquid supply pipe that drains the liquid from an opening at the end, and instead of discharging a part of the cleaning liquid, a liquid is added to the cleaning liquid. A cleaning method characterized by draining a cleaning solution of the same quality as the cleaning solution. 4) The cleaning method according to claim 3, wherein the cleaning liquid is discharged intermittently or in a pulsating manner. 5) It has a cleaning tank and a liquid suction pipe, the cleaning tank is continuously supplied with cleaning liquid from below and overflows, and the object to be cleaned is submerged and immersed in the cleaning liquid, and the liquid suction pipe has the function of sucking liquid from the end opening,
It is possible at any time to place the opening facing downward near the surface of the cleaning liquid or to withdraw it from above the cleaning tank, and when the opening is placed in the cleaning liquid, a portion of the cleaning liquid is removed. A cleaning device characterized in that it sucks in and discharges. 6) The cleaning device according to claim 5, further comprising a liquid supply pipe instead of the liquid suction pipe, and the liquid supply pipe has an end opening instead of the function of sucking liquid from the end opening of the liquid suction pipe. 1. A cleaning device having a function of flowing out a liquid from an opening, and when the opening is placed in the cleaning liquid, a cleaning liquid having the same quality as the cleaning liquid flows out. 7) The cleaning device according to claim 6, wherein the liquid supply pipe is capable of causing the cleaning liquid to flow out intermittently or in a pulsating manner.
JP23655490A 1990-09-05 1990-09-05 Washing method and device Pending JPH04115529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23655490A JPH04115529A (en) 1990-09-05 1990-09-05 Washing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23655490A JPH04115529A (en) 1990-09-05 1990-09-05 Washing method and device

Publications (1)

Publication Number Publication Date
JPH04115529A true JPH04115529A (en) 1992-04-16

Family

ID=17002372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23655490A Pending JPH04115529A (en) 1990-09-05 1990-09-05 Washing method and device

Country Status (1)

Country Link
JP (1) JPH04115529A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119603A (en) * 2010-12-03 2012-06-21 Japan Display Central Co Ltd Substrate processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119603A (en) * 2010-12-03 2012-06-21 Japan Display Central Co Ltd Substrate processing apparatus

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