JPH04111454A - Semiconductor device and resin molding device thereof - Google Patents

Semiconductor device and resin molding device thereof

Info

Publication number
JPH04111454A
JPH04111454A JP2231461A JP23146190A JPH04111454A JP H04111454 A JPH04111454 A JP H04111454A JP 2231461 A JP2231461 A JP 2231461A JP 23146190 A JP23146190 A JP 23146190A JP H04111454 A JPH04111454 A JP H04111454A
Authority
JP
Japan
Prior art keywords
resin
cavity
holes
air
molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2231461A
Other languages
Japanese (ja)
Inventor
Yoshiharu Kaneda
芳晴 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP2231461A priority Critical patent/JPH04111454A/en
Publication of JPH04111454A publication Critical patent/JPH04111454A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To eliminate the need for forming an air vent in the metal mold of a resin molding device and to prevent the generation of a void in a molding resin by a method wherein a plurality of fine through holes penetrating the surface and rear of a heat dissipation plate are perforated in the resin molding part of the plate. CONSTITUTION:Since a resin b injected via a gate 10 advances in the interior of a cavity 11 in such a way as to cover the upper part of a heat dissipation plate 1a, the air, which is pressed by the intrusion of this resin B, in the cavity 11 is expelled in a venting hole 4a in a bottom force 4 through a multitude of through holes 1c in the plate 1a and is exhausted to the outside. Accordingly, the resin B is filled in this cavity 11 while expelling the air to the outside like a conventional case where an air vent is formed and a void can be reliably prevented from being generated in the molding resin. Moreover, as a new resin is used in these holes 1c each time a resin molding work is performed, a cleaning work for removing a sticked resin becomes unnecessary unlike the conventional method where the air vent is formed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、パワートランジスタ等の半導体装置とこの半
導体装置を樹脂モールドするための樹脂モールド装置に
間する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device such as a power transistor and a resin molding apparatus for resin molding the semiconductor device.

〔従来の技術〕[Conventional technology]

パワートランジスタ等の半導体装置用樹脂モールド装置
は、第5図に示すように、リードフレーム1の放熱板1
aがキャビティ11内に位置するようにこのリードフレ
ームlを下金型4と上金型5との間に挟み込むようにな
っている。ただし、図示の半導体装置は、半導体ペレッ
ト2をボンディングした放熱板1aの裏面がモールド樹
脂の裏面に露出するタイプのものを示しているため、こ
の放熱板1aは、キャビティ11の底面を構成する下金
型4上に密着している。そして、金型4゜5を加熱する
と共にポット6内に樹脂タブレットAを装填してプラン
ジャ7て押圧すると、加熱加圧されて流動化した樹脂が
ランナ9を通ってゲート10からキャビティll内に注
入される。すると、この注入された樹脂がリードフレー
ム1の放熱板la上を覆い、金型4,5からの熱によっ
てキャビティll内で硬化することにより樹脂モールド
が行われる。
As shown in FIG.
This lead frame l is sandwiched between a lower mold 4 and an upper mold 5 so that the lead frame a is located in the cavity 11. However, since the illustrated semiconductor device is of a type in which the back surface of the heat sink 1a to which the semiconductor pellet 2 is bonded is exposed to the back surface of the molded resin, the heat sink 1a is placed under the bottom surface of the cavity 11. It is in close contact with the mold 4. Then, when the mold 4.5 is heated and the resin tablet A is loaded into the pot 6 and pressed by the plunger 7, the heated and pressurized and fluidized resin passes through the runner 9 and enters the cavity 10 from the gate 10. Injected. Then, the injected resin covers the heat sink la of the lead frame 1, and is cured in the cavity 11 by heat from the molds 4 and 5, thereby performing resin molding.

ここで、上記のようにキャビティ11内に樹脂を注入す
る場合には、このキャビティ11内の空気を外部に逃が
す必要がある。このため、従来は、第6図に示すように
、下金型4と上金型5との間に外部に連通ずるエアーヘ
ン)!2を設け、このエアーベント12をリードフレー
ム1のリード1bが下金型4と上金型5との間に挟み込
まれろ位置に間口することにより、樹脂が注入された際
にここから空気が抜は出せるようにしていた。エアーベ
ント12は、下金型4又は上金型5に研磨によって30
μm〜100μm程度の深さの溝を形成した極めて狭い
空気の通路である。しかしながら、樹脂モールドの際に
は、キャビティll内に満たされた樹脂がこのエアーペ
ン)12内にも一部入り込むことになり、これをそのま
まにしておいたのでは、次回の樹脂モールド時に空気の
抜は道が塞がれることになる。そして、このようにエア
ーベント12がら空気が抜は出せなくなると、キャビテ
ィll内で圧縮されて逃げ場のなくなった空気が硬化し
たモールド樹脂内に気泡状となって残りボイドが発生す
る。このようなボイドは、モールド樹脂の表面に露出し
た場合には、半導体装置の外観不良となり、また、内部
に発生したときは、耐湿性や熱伝導性を低下させ寿命を
短縮する原図になる。そこで、従来は、金型4.5にお
けるエアーベント12部分の表面を梨地状に形成し、こ
のエアーベント12内に入り込んだ樹脂との間に空気の
層が形成されるようにして、硬化した樹脂を剥がれ易く
すると共に、リードフレーム1のリード1bに表面処理
を行って樹脂が馴染み易くなるようにすることにより、
樹脂モールドされたリードフレームlの取り出しの際に
、このエアーベント12内の樹脂をモールド樹脂と共に
剥ぎ取ることができろようにしていた。
Here, when injecting the resin into the cavity 11 as described above, it is necessary to release the air inside the cavity 11 to the outside. For this reason, conventionally, as shown in FIG. 6, an air vent is provided between the lower mold 4 and the upper mold 5 to communicate with the outside! 2, and the air vent 12 is placed at a position where the leads 1b of the lead frame 1 are sandwiched between the lower mold 4 and the upper mold 5, so that air can be evacuated from here when the resin is injected. I was trying to make it come out. The air vent 12 is made by polishing the lower mold 4 or the upper mold 5.
It is an extremely narrow air passage with grooves having a depth of approximately 100 μm. However, during resin molding, some of the resin that fills the cavity will also enter the air pen (12), and if this is left as is, the air will be removed during the next resin molding. The road will be blocked. When the air cannot escape from the air vent 12 in this way, the air that is compressed within the cavity 11 and has no place to escape becomes bubbles in the hardened mold resin and remains, creating voids. If such voids are exposed on the surface of the molding resin, they will cause a poor appearance of the semiconductor device, and if they occur inside, they will reduce moisture resistance and thermal conductivity, leading to a shortened lifespan. Therefore, in the past, the surface of the air vent 12 portion of the mold 4.5 was formed into a matte finish so that an air layer was formed between the resin that had entered the air vent 12 and the hardened resin. By making the resin easy to peel off and by applying surface treatment to the leads 1b of the lead frame 1 so that the resin can be easily absorbed,
When taking out the lead frame l molded with resin, the resin inside the air vent 12 can be peeled off together with the mold resin.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、このような樹脂モールド′#R畳も、樹脂モ
ールド作業を繰り返すうちにはエアーベント12内に僅
かずつ樹脂が付着するようになり、やがてこの樹脂がこ
びり付いてエアーベン)12を塞ぐことになる。このた
め、従来は、上記のようにエアーベント12内への樹脂
の付着防止対策を施した場合にも、樹脂モールド作業を
何度か繰り返すと、作業者がブラシを使用してこのエア
ーベント12内にこびり付いた樹脂を削り取りエアーブ
ローで除去するクリーニング作業を行う必要があった。
However, even with such resin molded '#R tatami mats, as the resin molding work is repeated, resin will gradually adhere to the inside of the air vent 12, and eventually this resin will become stuck and block the air vent) 12. . For this reason, in the past, even when measures were taken to prevent resin from adhering to the inside of the air vent 12 as described above, if the resin molding work was repeated several times, the operator would use a brush to remove the inside of the air vent 12. It was necessary to perform cleaning work to scrape off the resin stuck inside and remove it with air blow.

このため、従来は、半導体装置を樹脂モールドする際に
、エアーベント12のクリーニング作業が手間となって
作業能率を悪くし、また、このクリーニング作業が不十
分な場合には、半導体装置に外観不良が発生したり耐湿
性や熱伝導性が低下するという問題が発生していた。
For this reason, conventionally, when molding a semiconductor device with resin, cleaning the air vent 12 becomes a hassle and reduces work efficiency.Furthermore, if the cleaning work is insufficient, the semiconductor device may have an appearance defect. Problems have arisen in that moisture resistance and thermal conductivity are reduced.

〔課題を解決するための手段〕[Means to solve the problem]

上記問題を解決するために、半導体ペレットをマウント
した放熱板の裏面を露出させて半導体ペレットを含む主
要部分を樹脂モールドした半導体装置において、上記放
熱板の樹脂モールド部に表裏面を貫通する微細な貫通孔
を複数穿設したことを特徴とする半導体装置を提供し、
また、この半導体装置を製造する装置として、半導体ペ
レットをマウントしかつ樹脂モールド予定部に微細な貫
通孔を穿設した放熱板の裏面を密着させて収容する金型
キャビティの上記貫通孔と対向する部分に外部と連通ず
る通気孔を設けたことを特徴とする樹脂モールド装置を
提供する。
In order to solve the above problem, in a semiconductor device in which the back side of a heat sink on which a semiconductor pellet is mounted is exposed and the main part including the semiconductor pellet is molded with resin, the resin molded part of the heat sink has a microscopic structure that penetrates the front and back surfaces. Provided is a semiconductor device characterized by having a plurality of through holes,
In addition, as an apparatus for manufacturing this semiconductor device, a mold cavity facing the above-mentioned through-holes is used to mount the semiconductor pellets and accommodate the semiconductor pellets with the back surface of a heat sink having fine through-holes drilled in the area where the resin mold is to be made. To provide a resin molding device characterized in that a portion thereof is provided with a ventilation hole communicating with the outside.

〔作 用〕[For production]

本発明により、樹脂モールド時に樹脂モールド予定部(
キャビティ)に注入された樹脂は放熱板の貫通孔から空
気を追出しつつ充填される・〔実施例〕 以下、図面を参照しながら、本発明の実施例を詳述する
According to the present invention, during resin molding, the area to be resin molded (
The resin injected into the cavity is filled while expelling air from the through holes of the heat sink. [Example] Hereinafter, examples of the present invention will be described in detail with reference to the drawings.

第1図乃至第4図は、本発明の一実施例を示すものであ
って、第1図は半導体装置の斜視図、第2図は半導体装
置の縦断面図、第38!Iは樹脂モールド装置の縦断面
図、第4図は樹脂モールド装置におけるキャビティ内の
部分拡大縦断面図である。
1 to 4 show an embodiment of the present invention, in which FIG. 1 is a perspective view of a semiconductor device, FIG. 2 is a vertical cross-sectional view of the semiconductor device, and FIG. I is a vertical cross-sectional view of the resin molding device, and FIG. 4 is a partially enlarged vertical cross-sectional view of the inside of the cavity in the resin molding device.

なお、第6図及び第7図の従来例と同様の機能を有する
構成部材には同じ番号を付記する。
Note that the same numbers are added to the structural members having the same functions as those of the conventional example shown in FIGS. 6 and 7.

本実施例のパワー用の半導体装置は、第1図及び第2図
に示すように、リードフレームlに連結した放熱板la
上に半導体ペレット2をボンディングし1、放熱板1a
の裏面を露出させて半導体ペレット2を含む主要部分を
モールド樹N3でモールドしている。この放熱板1aに
は、上面から裏面に至る多数の微細な貫通孔ICが形成
されている。そして、この貫通孔ICは、モールド樹脂
3が上面側から侵入し内部で硬化することにより寡かれ
ている。
As shown in FIGS. 1 and 2, the power semiconductor device of this embodiment has a heat sink la connected to a lead frame l.
A semiconductor pellet 2 is bonded on top 1, and a heat sink 1a is attached.
The main part including the semiconductor pellet 2 is molded with a mold tree N3 with the back surface exposed. A large number of fine through holes IC are formed in this heat sink 1a from the top surface to the back surface. The through hole IC is narrowed by the mold resin 3 entering from the upper surface side and hardening inside.

上記半導体装置の樹脂モールドを行う樹脂モールド装置
は、第3図に示すように、下金型4と上金型5とによっ
て構成されている。上金型5には、シリンダ状のボット
6が形成され、プランジャ7が嵌入して上下に摺動てき
るようになフている。
As shown in FIG. 3, the resin molding apparatus for resin molding the semiconductor device is comprised of a lower mold 4 and an upper mold 5. A cylindrical bot 6 is formed in the upper mold 5, into which a plunger 7 is fitted so that it can slide up and down.

また、下金型4におけるこのボット6に対応する位置に
は、凹部状のカル8が形成されている。そして、この下
金型4と上金型5とを重ね合わせると、これらの間にボ
ット6及びカル8に通じる通路状のランナ9が複数本形
成されるようになっている。また、この金型4.5間に
は、上記半導体装置におけるモールド樹脂3の型となる
キャビティ11も多数形成されるようになっていて、そ
れぞれケート10を介していずれかのランナ9に連通さ
れるようになっている。このキャビティ11の底面を構
成する下金型4には、外部に連通ずる通気孔4aが形成
されている。
Further, a recessed cull 8 is formed at a position corresponding to the bot 6 in the lower mold 4. When the lower mold 4 and the upper mold 5 are overlapped, a plurality of passage-like runners 9 communicating with the bot 6 and the cull 8 are formed between them. Further, between the molds 4.5, a large number of cavities 11 are formed to serve as molds for the mold resin 3 in the semiconductor device, and each cavity 11 is connected to one of the runners 9 via a cage 10. It has become so. A vent hole 4a communicating with the outside is formed in the lower mold 4 constituting the bottom surface of the cavity 11.

上記半導体装置におけるリードフレームlは、樹脂モー
ルド時に、この下金型4と上金型5との間に挟み込まれ
、放熱板1aがキャビティ11内ここ位置するように配
置されることになる。また、二の放熱板1aは、裏面が
キャビティ11の底面を形成する下金型4上に宝着する
ようになっている。従って、下金型4に形成された通気
孔4aは、この放熱板1aの裏面によって寡がれろと共
に、放熱板1aの多数の貫通孔】Cを介し・てキャビテ
ィ11と通じるようになる。
The lead frame 1 in the semiconductor device is sandwiched between the lower mold 4 and the upper mold 5 during resin molding, and the heat dissipation plate 1a is positioned within the cavity 11. Further, the second heat dissipating plate 1a is configured such that its back surface is fitted onto the lower mold 4 forming the bottom surface of the cavity 11. Therefore, the ventilation holes 4a formed in the lower mold 4 are narrowed by the back surface of the heat sink 1a, and communicate with the cavity 11 through the numerous through holes C of the heat sink 1a.

上記構成の樹脂モールド装置は、まず、リードフレーム
lを挟み込んで下金型4と上金型5とを重ね合わせる。
In the resin molding apparatus having the above configuration, first, the lower mold 4 and the upper mold 5 are stacked with the lead frame l sandwiched therebetween.

そして、この金型4,5を加熱すると共にボット6内に
樹脂タブレットAを装填してプランジャ7で押圧を行う
と、加熱加圧されてfi動化した樹脂がランナ9を通っ
てゲー)10がら各キャビティll内に注入される。す
ると、この注入された樹脂がキャビティ11を満たし、
金型4.5からの熱によって硬化する。この際、ゲ−)
10を介して注入された樹脂Bは、第4図に示すように
、放熱板la上を覆うようにキャビティ11内を進むた
め、この樹脂Bの侵入によって圧迫されたキャビティ1
1内の空気が放熱板1aの多数の貫通孔1cから下金型
40通気孔4aに抜は出し外部に排出されることになる
。従って、樹脂Bは、従来のエアーベントが形成されて
いた場合と同様に、空気を外部に追い出しながらこのキ
ャビティll内に充填されることになる。ただし、この
貫通孔1cは、金型4.5間に設けていた従来のエアー
ベントとは位置が異なるため、注入された樹脂Bがこの
貫通孔1cの間口部に至ったときにキャビティ11内も
この樹脂Bで満たされているように、ゲート10の形状
やキャビティ11内の各面の角度等を変更しなければな
らない場合がある。また、樹脂Bは、キャビティll内
を満たした後も暫く加圧を受けるので、この貫通孔1c
にも侵入することになる。しかし、樹脂Bが微細な貫通
孔1cに侵入すると、金型4,5がらの熱によって急速
に加熱されて硬化するので、この貫通孔1cは直ちに寒
がれ、放熱板1aの裏面側にまで樹脂Bが流れ出るおそ
れはほとんどない。
Then, when the molds 4 and 5 are heated and the resin tablet A is loaded into the bot 6 and pressed with the plunger 7, the heated and pressurized resin becomes fi activated and passes through the runner 9. is injected into each cavity. Then, this injected resin fills the cavity 11,
It is cured by heat from the mold 4.5. At this time, game)
As shown in FIG. 4, the resin B injected through the resin B advances through the cavity 11 so as to cover the heat sink la, so that the cavity 1 is compressed by the intrusion of the resin B.
The air in the heat dissipation plate 1a is drawn out through the numerous through holes 1c of the heat sink 1a to the ventilation holes 4a of the lower mold 40 and is discharged to the outside. Therefore, the resin B is filled into the cavity 11 while expelling air to the outside, as in the case where a conventional air vent is formed. However, since this through hole 1c is located at a different position from the conventional air vent provided between the molds 4.5, when the injected resin B reaches the frontage of this through hole 1c, In some cases, it may be necessary to change the shape of the gate 10, the angle of each surface in the cavity 11, etc. so that the resin B is also filled with the resin B. In addition, since the resin B is pressurized for a while even after filling the cavity 11, the through hole 1c
It will also invade. However, when the resin B enters the minute through-holes 1c, it is rapidly heated and hardened by the heat from the molds 4 and 5, so the through-holes 1c immediately cool and even reach the back side of the heat sink 1a. There is almost no possibility that resin B will flow out.

上記のようにして各キャビティ11内に充填された樹脂
Bは、金型4,5がらの熱によって硬化すると、上記半
導体装置におけろモールド樹脂3となる・そして・上金
型5を持ち上げノックアウトビンによりこのリードフレ
ーム1を取り出すと共に、リードlbの先端部分を切断
すると、上記半導体装置が完成する。
When the resin B filled in each cavity 11 as described above is cured by the heat of the molds 4 and 5, it becomes the mold resin 3 in the semiconductor device. Then, the upper mold 5 is lifted and knocked out. The lead frame 1 is taken out using a bin and the tips of the leads lb are cut off to complete the semiconductor device.

この結果・本実施例によれば、下金型4の通気孔4aに
通じる放熱板1aの多数の貫通孔1cが、樹脂Bの注入
の際に従来のエアーベントに代わってキャビティ11内
の空気を逃がすようになるので、コノキャビティll内
で形成されたモールド樹脂3にボイドが発生するのを確
実に防止することがてきる、しかも、この貫通孔1cは
、樹脂モールドの作業のたびに新しいものを使用するこ
とになるので、従来のエアーベントのようにこびり付い
た樹脂を除去す逼ためのクリーニング作業が不要となる
As a result, according to this embodiment, the large number of through holes 1c of the heat sink 1a that communicate with the ventilation holes 4a of the lower mold 4 are used instead of the conventional air vents to prevent air in the cavity 11 when resin B is injected. As a result, it is possible to reliably prevent the generation of voids in the mold resin 3 formed within the cono cavity 11. Moreover, this through hole 1c allows new mold resin to be removed each time the resin mold is worked. This eliminates the need for cleaning work to remove stuck-on resin, which is required for conventional air vents.

なお、上記実施例では、貫通孔1cに侵入した樹脂Bが
この貫通孔ICの途中で硬化するようになフていたが、
条件によっては、この樹脂Bの硬化が間に合わず一部が
放熱板l&の裏面に漏れ出すような場合もある。従って
、このようなおそれがあるときには、第5図に示すよう
に、放熱板laの裏面に凹部1dを設け、貫通孔ICが
全てこの凹部1d内に間口するように形成することによ
り、漏れ出した樹脂Bをこの凹部1d内に止めることが
できる。このため、放熱板1aの裏面から樹脂Bが突出
するようなことがなくなるので、後の工程てこの樹脂B
を削り落とす作業を追加する必要もなくなる。
In addition, in the above embodiment, the resin B that entered the through hole 1c was cured in the middle of this through hole IC, but
Depending on the conditions, this resin B may not be cured in time and a portion may leak out onto the back surface of the heat sink l&. Therefore, when there is such a possibility, as shown in FIG. 5, a recess 1d is provided on the back surface of the heat sink la, and all through holes IC are formed in this recess 1d to prevent leakage. The resin B can be stopped in this recess 1d. Therefore, the resin B will not protrude from the back surface of the heat sink 1a, so the resin B will be used as a lever in the later process.
There is no need to add additional work to remove it.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明かなように、本発明は、樹脂モールド
の際にキャビティ内の空気がリードフレームの放熱板に
設けられた貫通孔から下金型の通気孔を通って外部に抜
は出すことができるので、モールド樹脂内にボイドが発
生するのを防止する二とができ、半導体装置に外観不良
が発生したり耐湿性や熱伝導性が低下するのを防止する
ことができろという効果を奏する。しかも、樹脂モール
ド装置の金型にエアーベントを形成する必要がなくなる
ので、二のエアーベントζここびり1寸いた樹脂を削り
取るクリーニング作業が不要になるという効果を奏する
As is clear from the above description, the present invention allows the air in the cavity to be extracted to the outside through the through hole provided in the heat sink of the lead frame and through the ventilation hole in the lower mold during resin molding. As a result, it is possible to prevent voids from forming in the molding resin, which has the effect of preventing appearance defects in semiconductor devices and deterioration of moisture resistance and thermal conductivity. play. Furthermore, since it is not necessary to form an air vent in the mold of the resin molding device, there is an effect that cleaning work for scraping off the resin that is 1 inch thick from the second air vent ζ is unnecessary.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第4図は、本発明の一実施例を示すものてあ
フて、第1図は半導体装置の斜視図、第2図は半導体装
置の縦断面図、第3図は樹脂モールド装置の縦断面図、
′!s4図は樹脂モールド装置におけるキャビティ内の
部分拡大縦断面図、第5図は本発明の他の実施例を示す
ものであって、半導体装置の縦断面図、第6図及び第7
図は従来例を示すものであって、第5図は樹脂モールド
装置の縦断面図、第6図は樹脂モールド装置におけるキ
ャビティ内の部分拡大縦断面図である。 l・・・リードフレーム、 1a・・・放熱板、 1c・・・貫通孔、 3・・・モールド樹脂、 4・・・下金型、 4a・・・通気孔、 11・・・キャビティ。 菓1図 特  許  出  願  人 間西日本電気株式会社 第3図 第4図 簗5図
1 to 4 show an embodiment of the present invention, in which FIG. 1 is a perspective view of a semiconductor device, FIG. 2 is a vertical sectional view of the semiconductor device, and FIG. 3 is a resin mold. longitudinal cross-sectional view of the device;
′! Figure s4 is a partially enlarged vertical cross-sectional view of the inside of the cavity in the resin molding device, and Figure 5 is a vertical cross-sectional view of the semiconductor device, and Figures 6 and 7 are views showing another embodiment of the present invention.
The figures show a conventional example, in which FIG. 5 is a longitudinal cross-sectional view of a resin molding device, and FIG. 6 is a partially enlarged vertical cross-sectional view of the inside of a cavity in the resin molding device. l...Lead frame, 1a...Radiation plate, 1c...Through hole, 3...Mold resin, 4...Lower mold, 4a...Vent hole, 11...Cavity. Figure 1 patent application Ningen Nishinippon Electric Co., Ltd. Figure 3 Figure 4 Figure 5

Claims (2)

【特許請求の範囲】[Claims] (1)半導体ペレットをマウントした放熱板の裏面を露
出させて半導体ペレットを含む主要部分を樹脂モールド
した半導体装置において、上記放熱板の樹脂モールド部
に表裏面を貫通する微細な貫通孔を複数穿設したことを
特徴とする半導体装置。
(1) In a semiconductor device in which the back side of a heat sink on which a semiconductor pellet is mounted is exposed and the main part including the semiconductor pellet is molded in resin, a plurality of fine through holes are drilled through the front and back surfaces of the resin molded part of the heat sink. A semiconductor device characterized by:
(2)半導体ペレットをマウントしかつ樹脂モールド予
定部に微細な貫通孔を穿設した放熱板の裏面を密着させ
て収容する金型キャビティの上記貫通孔と対向する部分
に外部と連通する通気孔を設けたことを特徴とする樹脂
モールド装置。
(2) Ventilation holes communicating with the outside in the part facing the through-holes of the mold cavity, which accommodates the semiconductor pellets in close contact with the back side of a heat dissipation plate with fine through-holes drilled in the area where the resin molding is planned. A resin molding device characterized by being provided with.
JP2231461A 1990-08-31 1990-08-31 Semiconductor device and resin molding device thereof Pending JPH04111454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2231461A JPH04111454A (en) 1990-08-31 1990-08-31 Semiconductor device and resin molding device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2231461A JPH04111454A (en) 1990-08-31 1990-08-31 Semiconductor device and resin molding device thereof

Publications (1)

Publication Number Publication Date
JPH04111454A true JPH04111454A (en) 1992-04-13

Family

ID=16923874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2231461A Pending JPH04111454A (en) 1990-08-31 1990-08-31 Semiconductor device and resin molding device thereof

Country Status (1)

Country Link
JP (1) JPH04111454A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125079A (en) * 1994-10-25 1996-05-17 Rohm Co Ltd Heat sink mounting structure for semiconductor device
US5679610A (en) * 1994-12-15 1997-10-21 Kabushiki Kaisha Toshiba Method of planarizing a semiconductor workpiece surface
JP2008068448A (en) * 2006-09-12 2008-03-27 Apic Yamada Corp Resin molding die

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125079A (en) * 1994-10-25 1996-05-17 Rohm Co Ltd Heat sink mounting structure for semiconductor device
US5679610A (en) * 1994-12-15 1997-10-21 Kabushiki Kaisha Toshiba Method of planarizing a semiconductor workpiece surface
JP2008068448A (en) * 2006-09-12 2008-03-27 Apic Yamada Corp Resin molding die

Similar Documents

Publication Publication Date Title
EP0730937B1 (en) A resin molding machine with release film
US4368168A (en) Method for encapsulating electrical components
JP2010010702A (en) Method of manufacturing semiconductor device
JP2003033922A (en) Sheet for cleaning mold and method for manufacturing semiconductor device using the same
JPH04111454A (en) Semiconductor device and resin molding device thereof
KR102393495B1 (en) Resin molded product manufacturing method and resin molding apparatus
EP0746455B1 (en) Method and apparatus for molding electrical or other parts on a carrier
US6787089B2 (en) Method for making a shoe
EP0249621A1 (en) Method and composite article for cleaning molds
JPH01122417A (en) Cleaning method for mold for synthetic resin molding
JP3630446B2 (en) Mold
JP3924457B2 (en) Resin sealing device and resin sealing method
JP2017087453A (en) Resin molding die and resin molding method
JP3832727B2 (en) FRP structure and manufacturing method thereof
JPH06344389A (en) Mold
SE442725B (en) DEVICE FOR A CONSTRUCTION MACHINE FOR THE MANUFACTURING OF CONCRETE PLATE
JP7203926B1 (en) Mold for resin molding, resin molding apparatus, and method for manufacturing resin molded product
JPH05326597A (en) Sealing and molding device for electronic component with resin, and releasing method for molded item from mold
JP3394463B2 (en) Mold for resin-encapsulated semiconductor device and its lead frame
JP3468581B2 (en) Synthetic resin molding equipment
JP2649304B2 (en) Method of manufacturing multicolor injection molded shoes
JP4358326B2 (en) Method and apparatus for cleaning semiconductor mold surface
JPH0482236A (en) Method and apparatus for resin sealing and molding of electronic component
JP2842272B2 (en) Resin sealing method for semiconductor device and sealing device therefor
JPH1158421A (en) Mold device for cast molding