JPH04109528U - Etching equipment for semiconductors - Google Patents

Abstract

(57) [Summary] [Purpose] To make the amount of etching uniform within the wafer surface by equalizing the amount of chemical sprayed between the center and the outer periphery of the wafer. [Structure] When scanning the nozzle 2 for spraying a chemical solution in the radial direction of the wafer 1, the closer the nozzle is to the center of the wafer in the moving direction 6, the faster it is, and the slower it is closer to the outer periphery of the wafer in the nozzle moving direction 5. It has a variable scan speed mechanism for moving nozzles.

Description

[Detailed explanation of the idea]

0001

[Industrial application field]

This invention relates to an etching system for semiconductors, and in particular, The present invention relates to an apparatus for etching by spraying a chemical onto the surface of a wafer.

0002

[Conventional technology]

Conventionally, this type of etching apparatus is shown in the side view (a) and plan view (b) of FIG. As shown, within the spray range 4 at the center of the wafer 1 rotating in the direction of rotation 3 In addition, there is a structure in which the chemical solution is sprayed from a single fixed nozzle 2, and a side view in Figure 3. As shown in (a) and plan view (b), spray between the center and outer periphery of the wafer. The chemical solution is sprayed from the nozzle 2 which scans at a constant speed in the movement direction 7 in the range 4. It had a structure that

0003

[Problem that the idea aims to solve]

This conventional etching system can only be used for small-diameter wafers with an outer diameter of 100 mm or less. When using a large-diameter wafer with an outer diameter of 125 mm or more, uniform etching can be achieved. When used for wafers, the rotational peripheral speed of the wafer at the center and outer periphery of the wafer is Because the amount of chemical spray varies depending on the stomach. Therefore, there was a problem that the etching rate varied within the plane of the wafer. .

0004

[Means to solve the problem]

The etching apparatus of this invention uses a nozzle for spraying a chemical solution on the radius of the wafer. When scanning in the direction of It has a variable scan speed mechanism that allows the camera to move quickly.

[0005]

【Example】

Next, the present invention will be explained with reference to the drawings. Figure 1 shows an embodiment of the present invention. In the figures, figure (a) is a side view and figure (b) is a plan view. On the rotating wafer 1 When the nozzle 2 moves from the center to the outer periphery in the moving direction 5, the nozzle 2 gradually slows down, and conversely, the nozzle 2 moves from the outer periphery to the center in the moving direction 6. When moving to the center of the wafer, gradually increase the speed of nozzle 2 to It is possible to equalize the amount of chemical liquid sprayed between the outer circumferential portion and the outer circumferential portion. As a result, the entire wafer 1 Equalizes the cumulative amount of etching on the body and achieves a uniform etching rate within one wafer surface. can be done. The nozzle scanning mechanism described above is a rocking machine using a cam. This can be easily implemented depending on the structure, etc.

[0006]

[Effect of the idea]

As explained above, the present invention is capable of varying the speed of the nozzle that scans the wafer. By spraying the chemical solution over the entire wafer, even large-diameter wafers can be sprayed. The cumulative amount of etching becomes uniform, and the entire wafer surface can be etched uniformly. effective.

[Brief explanation of drawings]

FIG. 1 is a diagram illustrating an embodiment of the present invention, in which figure (a) is a side view and figure (b) is a plan view.

FIG. 2 is a diagram showing a conventional etching apparatus, with FIG. 2(a) being a side view and FIG. 2(b) being a plan view.

FIG. 3 is a diagram showing another conventional etching apparatus, in which FIG. 3(a) is a side view and FIG. 3(b) is a plan view.

[Explanation of symbols]

1 wafer 2 nozzles 3 Wafer rotation direction 4 Chemical spray range 5, 6, 7 Nozzle movement direction

Claims (1)

[Scope of utility model registration request] 1. In a semiconductor etching apparatus that performs etching by spraying a chemical onto the wafer surface from a nozzle while rotating the semiconductor wafer, when the nozzle is scanned in the radial direction of the wafer, the closer the nozzle is to the center of the wafer, the more the nozzle is moved. A semiconductor etching apparatus characterized by having a variable scan speed mechanism that moves the scan speed faster and moves slower closer to the outer periphery.