JPH0410728B2 - - Google Patents
Info
- Publication number
- JPH0410728B2 JPH0410728B2 JP17435284A JP17435284A JPH0410728B2 JP H0410728 B2 JPH0410728 B2 JP H0410728B2 JP 17435284 A JP17435284 A JP 17435284A JP 17435284 A JP17435284 A JP 17435284A JP H0410728 B2 JPH0410728 B2 JP H0410728B2
- Authority
- JP
- Japan
- Prior art keywords
- complex salt
- tcnq complex
- anode
- capacitor element
- tcnq
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000003839 salts Chemical class 0.000 claims description 49
- 239000003990 capacitor Substances 0.000 claims description 46
- 239000007787 solid Substances 0.000 claims description 20
- 239000007784 solid electrolyte Substances 0.000 claims description 18
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- PBYMYAJONQZORL-UHFFFAOYSA-N 1-methylisoquinoline Chemical compound C1=CC=C2C(C)=NC=CC2=C1 PBYMYAJONQZORL-UHFFFAOYSA-N 0.000 claims description 4
- YRCGJMGFKUITOD-UHFFFAOYSA-N CC1=CC=[N+](C=C1)[N+]1=CC=C(C=C1)C Chemical compound CC1=CC=[N+](C=C1)[N+]1=CC=C(C=C1)C YRCGJMGFKUITOD-UHFFFAOYSA-N 0.000 claims description 4
- FMJXFOQSCMCXGZ-UHFFFAOYSA-N 1-propan-2-ylisoquinoline Chemical compound C1=CC=C2C(C(C)C)=NC=CC2=C1 FMJXFOQSCMCXGZ-UHFFFAOYSA-N 0.000 claims description 3
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 41
- 238000000034 method Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 238000005470 impregnation Methods 0.000 description 12
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 12
- 239000003792 electrolyte Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007743 anodising Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011244 liquid electrolyte Substances 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- IBTMICNUANPMIH-UHFFFAOYSA-N diazanium ethane-1,2-diol hexanedioate Chemical compound C(CO)O.C(CCCCC(=O)[O-])(=O)[O-].[NH4+].[NH4+] IBTMICNUANPMIH-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010294 electrolyte impregnation Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-O isoquinolin-2-ium Chemical compound C1=[NH+]C=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-O 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Primary Cells (AREA)
- Thermistors And Varistors (AREA)
- Fuel Cell (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17435284A JPS6151906A (ja) | 1984-08-22 | 1984-08-22 | 固体電解コンデンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17435284A JPS6151906A (ja) | 1984-08-22 | 1984-08-22 | 固体電解コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6151906A JPS6151906A (ja) | 1986-03-14 |
| JPH0410728B2 true JPH0410728B2 (enrdf_load_stackoverflow) | 1992-02-26 |
Family
ID=15977130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17435284A Granted JPS6151906A (ja) | 1984-08-22 | 1984-08-22 | 固体電解コンデンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6151906A (enrdf_load_stackoverflow) |
-
1984
- 1984-08-22 JP JP17435284A patent/JPS6151906A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151906A (ja) | 1986-03-14 |