JPH0410628B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to light (here, light in a broad sense, including ultraviolet rays, visible rays, infrared rays, X-rays, γ-rays, etc.)
It relates to photoconductive members sensitive to electromagnetic waves such as. As a photoconductive material for forming a photoconductive layer in a solid-state imaging device, an electrophotographic image forming member in the image forming field, or a document reading device, it is highly sensitive,
Must have a high signal-to-noise ratio [photocurrent (Ip)/dark current (Id)], have absorption spectral characteristics that match the spectral characteristics of the irradiated electromagnetic waves, have fast photoresponsiveness, and have the desired dark resistance value. At times, solid-state imaging devices are required to have characteristics such as being non-polluting to the human body and being able to easily process afterimages within a predetermined time.
Particularly in the case of an electrophotographic image forming member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-polluting property during use is an important point. Based on these points, amorphous silicon (hereinafter referred to as a-Si) is a photoconductive material that has recently attracted attention. As a photographic image forming member, application to a photoelectric conversion reader is described in DE 2933411. However, conventional photoconductive members having a photoconductive layer composed of a-Si have poor electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsiveness, and use environment characteristics. In terms of stability, stability over time, and durability, each individual property has been improved, but the reality is that there is still room for further improvement in terms of overall property improvement. be. For example, when applied to electrophotographic image forming members, when trying to achieve high photosensitivity and high dark resistance at the same time, it has often been observed in the past that residual potential remains during use, and this type of photoconductive member When used repeatedly for a long time, fatigue accumulates due to repeated use, resulting in so-called ghost development, which causes afterimages. When the photoconductive layer is made of a-Si material, in order to improve its electrical and photoconductive properties, hydrogen atoms, halogen atoms such as fluorine atoms and chlorine atoms, and electrically conductive Boron atoms, phosphorus atoms, etc. are included for control purposes, and other atoms are included as constituent atoms in the photoconductive layer for the purpose of improving other properties. In some cases, problems may arise in the electrical or photoconductive properties or voltage resistance of the formed layer. That is, for example, the lifetime of photocarriers generated by light irradiation in the formed photoconductive layer is not sufficient, or the injection of charge from the support side is not sufficiently prevented in dark areas, or ,
For example, there may be image defects commonly called "white spots" on images transferred to transfer paper, which are thought to be caused by localized discharge breakdown phenomena, or defects that may be caused by rubbing when a blade is used for cleaning, for example. A so-called image defect called "white stripe" may occur. Furthermore, when used in a humid atmosphere or immediately after being left in a humid atmosphere for a long time, so-called blurring of the image often occurs. Furthermore, if the layer thickness exceeds 10 microns or more, the layer may lift or peel off from the surface of the support, or cracks may develop as the time passes for the layer to stand in the air after being removed from the vacuum deposition chamber for layer formation. You can win by causing phenomena such as ``happening''. This phenomenon often occurs especially when the support is a drum-shaped support commonly used in the field of electrophotography, and there are points that can be solved in terms of stability over time. . Therefore, while efforts are being made to improve the properties of the a-Si material itself, it is necessary to take measures to solve all of the above-mentioned problems when designing photoconductive members. The present invention has been made in view of the above points, and includes a
-As a result of intensive research and study on Si from the viewpoint of its applicability as a photoconductive member used in electrophotographic image forming members, solid-state imaging devices, reading devices, etc., we found that silicon atoms an amorphous material containing at least either a hydrogen atom (H) or a halogen atom (X),
A photoconductive material composed of so-called hydrogenated amorphous silicon, halogenated amorphous silicon, or halogen-containing hydrogenated amorphous silicon (hereinafter "a-Si(H,X)" is used as a generic term for these). A photoconductive member designed and produced by specifying the layer structure of the photoconductive member as explained below not only exhibits extremely superior properties in practical use, but also has superior properties compared to conventional photoconductive members. This is based on the discovery that it is superior in all respects when compared, and that it has particularly excellent properties as a photoconductive member for electrophotography. The electrical, optical, and photoconductive properties of the present invention are virtually always stable regardless of the environment in which it is used, and it is extremely resistant to light fatigue and does not deteriorate even after repeated use, making it durable. The main object of the present invention is to provide a photoconductive member that has excellent moisture resistance and has no or almost no residual potential observed. Another object of the present invention is to provide excellent adhesion between a layer provided on a support and the support and between each laminated layer, to provide a dense and stable structural arrangement, and to provide layer quality. It is an object of the present invention to provide a photoconductive member with high quality. Another object of the present invention is that when applied as an electrophotographic image forming member, it has sufficient charge retention ability during charging processing for electrostatic image formation, and ordinary electrophotographic methods can be applied extremely effectively. An object of the present invention is to provide a photoconductive member having excellent electrophotographic properties. Still another object of the present invention is to provide high density images without any image defects or blurring during long-term use.
An object of the present invention is to provide a photoconductive member for electrophotography in which it is possible to easily obtain high-quality images with clear halftones and high resolution. Yet another object of the present invention is high photosensitivity,
Another object of the present invention is to provide a photoconductive member having high signal-to-noise ratio characteristics and high voltage resistance. The photoconductive member of the present invention comprises a support for the photoconductive member, an auxiliary layer made of an amorphous material having silicon atoms as a matrix and containing less than 30 atomic% of nitrogen atoms as constituent atoms of halogen atoms, and silicon. Composed of an amorphous material whose parent body is an atom and which contains atoms belonging to Group Group of the Periodic Table as constituent atoms.
a charge injection prevention layer with a layer thickness of 0.3 to 5 μm; a first amorphous layer that is composed of an amorphous material having silicon atoms as a matrix and exhibits photoconductivity; , is characterized by having a second amorphous layer made of an amorphous material containing silicon atoms and carbon atoms as constituent atoms. The photoconductive member of the present invention designed to have the above-mentioned layer structure can solve all of the above-mentioned problems, and has extremely excellent electrical, optical, photoconductive properties, and pressure resistance. and usage environment characteristics. In particular, when applied as an electrophotographic image forming member, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it is highly sensitive and has high
It has a high signal-to-noise ratio, has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution. In addition, the photoconductive member of the present invention has an amorphous layer formed on the support, which is strong and has excellent adhesion to the support, and can be continuously used at high speed for a long time. Can be used repeatedly. Hereinafter, the photoconductive member of the present invention will be explained in detail with reference to the drawings. FIG. 1 is a schematic configuration diagram schematically shown to explain the layer configuration of a photoconductive member according to a first embodiment of the present invention. The photoconductive member 100 shown in FIG. 1 is made of an amorphous material that uses silicon atoms as a matrix and contains less than 30 atomic percent of nitrogen atoms and halogen atoms as constituent atoms, on a support 101 for use as a photoconductive member. an auxiliary layer 102 , a charge injection prevention layer 103 , a first amorphous layer ( ) 104 having photoconductivity, and a second amorphous layer ( ) 105 . has a free surface 106. The auxiliary layer 102 is provided mainly for the purpose of measuring the adhesion between the support 101 and the charge injection prevention layer 103.
It is made of a material that has the characteristics described below so that it is compatible with both. The charge injection prevention layer 103 mainly has the function of effectively preventing charge from being injected from the support 101 side into the first amorphous layer ( ) 104 when the free surface 106 is charged. The first amorphous layer () 104 is the layer () 1
Upon irradiation with light sensitive to 04, the layer () 10
4, it has the function of generating a photo carrier and transporting the photo carrier in a predetermined direction. The auxiliary layer in the present invention is made of silicon atoms (Si).
The base is a nitrogen atom (N), a halogen atom (X), and a hydrogen atom (H) as necessary.
and the content of nitrogen atoms (N) C _(N) is
Amorphous materials (hereinafter referred to as “a-
(S _a N _1-a )b(H,X) _1-b ”. However, 0.6<
a, 0.8≦b). The auxiliary layer composed of a-(Si _a N _1-a )b(H,X) _1-b can be formed by glow discharge method, sputtering method, ion implantation method, ion plating method, This is done by the beam method, etc. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, amount of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be produced. It is relatively easy to control the manufacturing conditions for manufacturing a photoconductive member having the above-mentioned photoconductive member. The glow discharge method or the sputtering method is preferably employed because of the advantages that nitrogen atoms and halogen atoms can be easily introduced into the auxiliary layer to be produced together with silicon atoms. Furthermore, in the present invention, the auxiliary layer may be formed by using both the glow discharge method and the sputtering method within the same apparatus system. To form the auxiliary layer by glow discharge method a.
−(Si _a N _1-a ) b (H, X) The raw material gas for forming _1-b is
If necessary, it is mixed with a dilution gas at a predetermined mixing ratio and introduced into a deposition chamber for vacuum deposition where a support is installed, and a glow discharge is generated in the introduced gas atmosphere. What is necessary is to turn it into plasma and deposit a-( _Sia N _1-a )b(H,X) _1-b on the support. In the present invention, a-( _Sia N _1-a ) b(H,X) _1-b
As the raw material gas for formation, most of gaseous substances containing at least one of Si, N, and X as a constituent atom or gasified substances that can be gasified can be used. When using a raw material gas containing Si as one of Si, N, and X, for example, a raw material gas containing Si as a constituent atom, a raw material gas containing N as a constituent atom, and a raw material gas containing Alternatively, a raw material gas containing Si and a raw material gas containing N and X may be mixed at a desired mixing ratio. Can be used by mixing. Alternatively, a raw material gas containing Si and X as constituent atoms may be mixed with a raw material gas containing N as constituent atoms. In the present invention, preferred halogen atoms X are F, Cl, Br, and I, with F and Cl being particularly preferred. In the present invention, the auxiliary layer is composed of an amorphous material containing silicon atoms, nitrogen atoms, and halogen atoms, but as described above, the auxiliary layer can further contain hydrogen atoms. . The inclusion of hydrogen atoms in the auxiliary layer is advantageous in terms of production costs, since it is possible to share some of the raw material gas types when forming a continuous layer with the charge injection prevention layer and the amorphous layer. . In the present invention, starting materials that can be used as raw material gases that can be effectively used to form the auxiliary layer include those in a gaseous state at room temperature and normal pressure, or substances that can be easily gasified. . Examples of starting materials for forming such an auxiliary layer include nitrogen, nitrides, nitrogen compounds such as fluorinated nitrogen and azides, simple halogens, hydrogen halides,
Examples include interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, and silicon hydrides. Specifically, nitrogen (N ₂ ), nitrogen compounds such as ammonia (NH ₃ ), hydrazine (H ₂ NNH ₂ ),
Nitrogen trifluoride (F ₃ N), nitrogen tetrafluoride (F ₄ N ₂ ), hydrogen azide (HN ₃ ), ammonium azide (NH ₄ N ₃ )
etc., halogen gases include fluorine, chlorine, bromine, and iodine; hydrogen halides include FH, HI, HCl, and HBr; halogen compounds include BrF, ClF, ClF ₃ , ClF ₅ , BrF ₅ , _BrF3 ,
IF ₇ , IF ₅ , ICl, IBr, silicon halide
_SiF4 , _{Si2F6 , SiCl4} , _SiCl3Br , _{SiCl2Br2 ,}
SiClBr ₃ , SiCl ₃ I, SiBr ₄ , halogen-substituted silicon hydrides include SiH ₂ F ₂ , SiH ₂ Cl ₂ , SiHCl ₃ ,
SiH ₃ Cl, SiH ₃ Br, SiH ₂ Br ₂ , SiHBr ₃ , examples of silicon hydride include silanes such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , etc. I can do it. These starting materials for forming the auxiliary layer are used in such a way that the auxiliary layer to be formed contains silicon atoms, nitrogen atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio. They are selected and used as desired during layer formation. For example, SiH ₄ or Si ₂ H ₆ can easily contain silicon atoms and hydrogen atoms and form an auxiliary layer with desired characteristics, and N ₂ or NH ₃ can contain nitrogen atoms. SiF ₄ , SiH ₂ F ₂ , SiHCl ₃ , SiCl ₄ as a substance containing a halogen atom,
The auxiliary layer can be formed by introducing SiH ₂ Cl ₂ , SiH ₃ Cl, or the like in a gaseous state at a predetermined mixing ratio into an apparatus system for forming the auxiliary layer and causing glow discharge. Alternatively, _the auxiliary layer to be formed may contain He, Ne, _Ne , It is also possible to form an auxiliary layer by introducing it together with a rare gas such as Ar into an apparatus system for forming an intermediate layer to generate glow discharge. To form the auxiliary layer by the sputtering method, target a high-purity single crystal or polycrystalline Si wafer, a Si ₃ N ₄ wafer, or a wafer formed by mixing Si and Si ₃ N ₄ , These may be carried out by sputtering in various gas atmospheres containing halogen atoms and, if necessary, hydrogen atoms as constituent elements. For example, if a Si wafer is used as a target, the raw material gas for introducing N and The Si wafer may be sputtered by forming plasma. Alternatively, by using Si and Si ₃ N ₄ as separate targets or by using a single target formed by mixing Si and Si ₃ N ₄ , a gas containing at least halogen atoms can be produced. This is done by sputtering in an atmosphere. As the raw material gas for introducing N, X, and H if necessary, the starting material for forming the auxiliary layer shown in the glow discharge example described above is also used as an effective material in the sputtering method. can be done. In the present invention, so-called rare gases such as He, Ne,
Ar and the like can be cited as suitable examples. a-(Si _a N _1-a ) _b constituting the auxiliary layer of the present invention
(H _, Therefore, the conditions for forming the auxiliary layer are carefully selected and carefully selected so that the properties required for the auxiliary layer are imparted as desired. a-(Si _a
N 1 _{- a} ) _b (H, That is, a-(Si _a N _1-a ) _b (H,
X) When forming the auxiliary layer consisting of _1-b , the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer, and in the present invention,
a-(Si _a N _1-a ) _b (H,
X) The temperature of the support during layer formation is strictly controlled so that _1-b can be formed as desired. In order to effectively achieve the desired purpose in the present invention, the temperature of the support when forming the auxiliary layer is appropriately selected in the optimum range according to the method of forming the auxiliary layer. The formation is usually carried out at temperatures between 50 and 350°C, preferably between 100 and 250°C. To form the auxiliary layer, it is possible to continuously form the auxiliary layer, the charge injection prevention layer, the amorphous layer, and even other layers formed on the amorphous layer as necessary in the same system. Because it is relatively easy to finely control the composition ratio of atoms that make up each layer and control the layer thickness compared to other methods,
It is advantageous to employ the glow discharge method or the sputtering method, but when forming an auxiliary layer using these layer formation methods, the discharge power and gas pressure during layer formation, as well as the support temperature described above, must be adjusted. is created a−(Si _a
N _(1-a ) _b (H, X) can be cited as an important factor that influences the characteristics of _1-b . The discharge power conditions for effectively producing a-(Si _a N _{1- ab} (H,
Usually 1 to 300W, preferably 2 to 100W. The gas pressure in the deposition chamber is usually 0.01 to 5 Torr, preferably 0.01 to 5 Torr when layer formation is performed using the glow discharge method.
When forming a layer by the sputtering method at a pressure of about 0.1 to 0.5 Torr, it is usually 1×10 ^-3 to 5×
10 ^-2 Torr, preferably about 8 x 10 ^-3 to 3 x 10 ^-2 Torr. The amounts of nitrogen atoms and halogen atoms contained in the auxiliary layer in the photoconductive member of the present invention are determined so that the auxiliary layer can obtain the desired characteristics to achieve the object of the present invention, as well as the conditions for producing the auxiliary layer. This is an important factor for The amount C _(N) of nitrogen atoms contained in the auxiliary layer in the present invention is usually within the above-mentioned value range, but preferably 1×10 ^-3 when expressed in atomic%.
It is desirable that ≦C _(N) <30, more preferably 1≦C _(N) <30, optimally 10≦C _(N) <30. Further, the amount of halogen atoms (X) is preferably 1 to 20 atomic%, optimally 2 to 15 atomic%, and when hydrogen atoms (H) are included, the amount is It is preferably 19 atomic % or less, most preferably 13 atomic % or less. a-(Si _a N _1-a ) b(H,X) a-b in _1- b
The value of a is preferably 0.6.
<a≦0.99999, more preferably 0.6<a≦0.99,
It is optimal that 0.6<a≦0.9, and the value of b is preferably 0.8≦b≦0.99, more preferably 0.85≦b≦0.98. The numerical range of the layer thickness of the auxiliary layer in the present invention is appropriately determined as desired so as to effectively achieve the object of the present invention. In order to effectively achieve the object of the present invention, the thickness of the auxiliary layer is usually 30 Å to 2 μ, preferably 40 Å to 1.5 μ, and most preferably 50 Å to 1.5 μ. It is. The charge injection prevention layer constituting the photoconductive member of the present invention has a silicon atom (Si) as its base material, and preferably contains an atom belonging to a group of the periodic table (a group atom) and a hydrogen atom (H) or a halogen atom. (X), or both of these as constituent atoms (hereinafter referred to as "a-Si(V,H,X)"), the layer thickness t and the number of group atoms in the layer The content C _(V) is
It can be appropriately determined as desired so that the object of the present invention can be effectively achieved. The layer thickness t of the charge injection prevention layer in the present invention is preferably 0.3 to 5μ, more preferably 0.5 to 2μ, and the content of group atoms
C _(V) is preferably 1×10 ² to 1×
¹⁰⁵ atomic ppm, more preferably 5× ¹⁰² to 1
It is desirable to set it to ×10 ⁵ atomic ppm. In order to obtain a synergistic effect between the charge injection prevention layer and the auxiliary layer, it is preferable that the thickness of each layer and the content of Group Group atoms of the periodic table or nitrogen atoms be within the above ranges. This is important in order for the auxiliary layer to exhibit sufficient adhesion and for the charge injection prevention layer to exhibit sufficient charge injection prevention properties. Generally, when the charge injection prevention layer is made thinner, it is preferable to increase the number of Group Group atoms in the periodic table, and when it is made thicker, it is preferable to contain fewer atoms, but in the present invention, the adhesion with the auxiliary layer and the electrical properties After careful consideration, the content of nitrogen atoms in the auxiliary layer was
By setting the thickness to less than 30 atomic% and the thickness of the charge injection prevention layer within the above range, not only can improved adhesion and prevention of charge injection be achieved synergistically, but also the requirements for photoconductive materials can be achieved. It has been found that many of the desired characteristics can be fully satisfied. In the present invention, atoms belonging to Group 3 of the periodic table contained in the charge injection prevention layer include P (phosphorus), As (arsenic), Sb (antimony), and Bi.
(bismuth), etc., and particularly preferably used are P and _As . In the present invention, specific examples of the halogen atom (X) contained in the charge injection prevention layer if necessary include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such. Glow discharge method, sputtering method, ion implantation method, ion plating method, electron beam method, etc. are used to form the charge injection prevention layer composed of a-Si (V, H, X). Can be mentioned. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, amount of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured. Along with silicon atoms, it is relatively easy to control the manufacturing conditions for manufacturing photoconductive members that have group atoms,
The glow discharge method or the sputtering method is preferably employed because of the advantages that hydrogen atoms (H) and halogen atoms (X) can be easily introduced into the charge injection prevention layer to be prepared as needed. Furthermore, in the present invention, the charge injection prevention layer may be formed by using both the glow discharge method and the sputtering method in the same apparatus system. For example, a-Si(V,
In order to form a charge injection prevention layer composed of H, A raw material gas for introducing hydrogen atoms (H) and/or a raw material gas for introducing halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. a-Si is deposited on the auxiliary layer of a predetermined support that has been placed in a predetermined position and has already been provided with an auxiliary layer.
A layer consisting of (V, H, X) may be formed.
In addition, when forming by a sputtering method, for example, when sputtering a target composed of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, it is necessary to introduce group atoms. The source gas for sputtering may be introduced into the deposition chamber for sputtering together with a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as necessary. The following are effective starting materials for the raw material gas used to form the charge injection prevention layer in the present invention. First, silicon hydride (silanes) in a gaseous state or that can be gasified, such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , etc., is effective as a starting material that becomes the raw material gas for Si supply. It is cited as a material used in the production of silicon, especially in terms of ease of layer creation work and good Si supply efficiency.
Preferred examples include SiH ₄ and Si ₂ H ₆ . By using these starting materials, it is possible to introduce H as well as Si into the auxiliary layer formed by appropriately selecting the layer forming conditions. In addition to the above-mentioned silicon hydride, effective starting materials that serve as raw material gas for supplying Si include silicon compounds containing a halogen atom (X), so-called silane derivatives substituted with a halogen atom, specifically, for example,
Preferred examples include silicon halides such as SiF ₄ , Si ₂ H ₆ , SiCl ₄ and SiBr ₄ . Furthermore, SiH ₂ F ₂ , SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ ,
Halogen-substituted silicon hydrides such as SiH ₂ Br ₂ and SiHBr ₃ ,
Gaseous or gasifiable halides containing hydrogen atoms as one of their constituents can also be cited as starting materials for supplying Si for forming an effective charge injection prevention layer. Even when these silicon compounds containing halogen atoms (X) are used, as mentioned above, (X) is introduced together with Si into the charge injection prevention layer formed by appropriately selecting the layer formation conditions. I can do it. The silicon halide compound containing a hydrogen atom in the above-mentioned starting material is a hydrogen atom (H ) is also introduced, so it is used as a suitable starting material for introducing a halogen atom (X) in the present invention. In addition to the above-mentioned materials, examples of effective starting materials as raw material gases for introducing halogen atoms (X) used when forming the auxiliary layer in the present invention include halogen atoms such as fluorine, chlorine, bromine, and iodine. Gas, BrF, ClF, ClF ₃ , BrF ₅ , BrF ₃ , IF ₃ , IF ₇ ,
Interhalogen compounds such as ICl, IBr, HF, HCl,
Examples include hydrogen halides such as HBr and HI. In order to structurally introduce group atoms into the charge injection prevention layer, during layer formation, a starting material for introducing group atoms is placed in a deposition chamber in a gaseous state, and other materials are used to form the charge injection prevention layer. It may be introduced together with the starting material. Possible starting materials for the introduction of group atoms include materials that are gaseous at room temperature and pressure, or
It is desirable to use a material that can be easily gasified at least under layer-forming conditions. As a starting material for introducing such a group atom, specifically, for introducing a phosphorus atom, hydrogenated phosphorus such as PH ₃ and P ₂ H ₄ ,
_PH4I , _PF3 , _PF5 , _PCl3 , _PCl5 , _PBr3 , _PBr5 ,
Examples include halogenated phosphorus such as PI ₃ . In addition, _As H ₃ , _As F ₃ , _As Cl ₃ , _As Br ₃ , _As F ₅ ,
SbH ₃ , SbF ₃ , SbF ₅ , SbCl ₃ , SbCl ₅ , BiCl ₃ ,
BiH ₃ , BiBr ₃ and the like can also be mentioned as effective starting materials for introducing group atoms. In the present invention, the group atoms contained in the charge injection prevention layer to provide charge injection prevention properties are
It is preferable that the charge injection prevention layer be distributed substantially uniformly in a plane substantially parallel to the layer thickness direction (a plane parallel to the surface of the support) and in the layer thickness direction. In addition, when forming a charge injection prevention layer by a sputtering method, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, The raw material gas for introducing group atoms may be introduced into the vacuum deposition chamber in which sputtering is performed together with the raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as necessary. In the present invention, the content of group atoms introduced into the charge injection prevention layer is determined by the gas flow rate of the starting material for introducing group atoms introduced into the deposition chamber, the gas flow rate ratio, the discharge power, and the support. It can be arbitrarily controlled by controlling body temperature, pressure inside the deposition chamber, etc. In the present invention, the diluent gas used when forming the charge injection prevention layer by a glow discharge method or a sputtering method is a so-called rare gas, e.g.
Preferred examples include He, Ne, Ar, and the like. In the present invention, the amorphous layer () composed of a-Si (H, done by. For example, by glow discharge method,
In order to form an amorphous layer ( ) composed of a-Si (H,
A raw material gas for introducing (H) and/or for introducing halogen atoms (X) is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-Si(H,X) may be formed on the surface of a certain predetermined support. In addition, when forming by sputtering method,
For example, for introducing hydrogen atoms (H) and/or halogen atoms (X) when sputtering a target composed of Si in an atmosphere of inert gas such as Ar, He, or a mixed gas based on these gases. It is sufficient to introduce this gas into the deposition chamber for sputtering. In the present invention, if necessary, an amorphous layer ()
As the halogen atoms (X) contained therein, the same ones as mentioned in the case of the charge injection prevention layer can be mentioned. In the present invention, the raw material gas for supplying Si used when forming the amorphous layer ( ) includes SiH ₄ , which was mentioned when explaining the charge injection prevention layer.
Gaseous or gasifiable silicon hydrides (silanes) such as Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ can be used effectively, and in particular, they are easy to handle in the layer creation process. Preferred examples include SiH ₄ and Si ₂ H ₆ in terms of compatibility and good Si supply rate. In the present invention, many halogen compounds are effective as the raw material gas for introducing halogen atoms used when forming the amorphous layer (), as in the case of the charge injection prevention layer, such as halogen gas, halogen Preferred examples include halogen compounds in a gaseous state or which can be gasified, such as compounds, interhalogen compounds, and halogen-substituted silane derivatives. Further, a silicon compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom (Si) and a halogen atom (X), can also be mentioned as an effective compound in the present invention. In the present invention, the conductive properties of the amorphous layer can be controlled as desired by containing a substance that controls the conductive properties of the layer. Examples of such substances include so-called impurities in the semiconductor field, and in the present invention, a-
P gives P-type conductivity to Si(H,X)
Type impurities, specifically, atoms belonging to a group of the periodic table (group atoms) such as B (boron), Al (aluminum), Ga (gallium), In (indium), Tl
(thallium), etc., and B and Ga are particularly preferably used. In the present invention, the content of the substance that controls the conduction characteristics contained in the amorphous layer () is determined by the conduction characteristics required for the amorphous layer () or the layer ().
The layer can be appropriately selected depending on the organic relationship, such as the characteristics of other layers provided in direct contact with the layer and the relationship with the characteristics at the contact interface with the other layer. In the present invention, the content of the substance controlling the conduction properties contained in the amorphous layer () is usually 0.001 to 1000 atomic ppm, preferably
0.05-500atomic ppm, optimally 0.1-200atomic
It is preferable to set it in ppm. To structurally introduce substances that control conduction properties, such as group atoms, into an amorphous layer, the starting material for introducing group atoms is introduced in a gaseous state into a deposition chamber during layer formation. It may be introduced together with other starting materials for forming a crystalline layer. As a starting material for such introduction of group atoms, it is desirable to employ a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for introducing such group group atoms include B 2 H 6 , B ₂ H ₆ ,
B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H ₁₀ , B ₆ H ₁₂ , B ₆ H ₁₄
and boron halides such as BF ₃ , BCl ₃ , BBr ₃ and the like. In addition, AlCl ₃ ,
GaCl ₃ , Ga(CH ₃ ) ₃ , InCl ₃ , TlCl ₃ and the like may also be mentioned. In the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the amount of hydrogen atoms and halogen atoms contained in the charge injection prevention layer and the amorphous layer () of the photoconductive member to be formed. The sum (H+X) is usually 1 to 40 atomic%, preferably 5 to 30 atomic%.
It is desirable that this is done. In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the charge injection prevention layer or the amorphous layer (), for example, the support temperature or/and the hydrogen atoms (H), Alternatively, the amount of the starting material used to contain the halogen atoms (X) introduced into the deposition system, the discharge force, etc. may be controlled. In the present invention, the diluting gas used when forming the amorphous layer () by the glow discharge method or the sputtering gas used when forming the amorphous layer by the sputtering method includes a so-called rare gas, For example, He, Ne, Ar, etc. can be mentioned as suitable materials. In the present invention, the layer thickness of the amorphous layer ( ) is determined as appropriate depending on the characteristics required of the photoconductive member to be produced, but is usually 1 to 1.
It is desirable that the thickness be 100μ, preferably 1 to 80μ, optimally 2 to 50μ. In the photoconductive member 100 shown in FIG.
It is provided in order to achieve the objectives of the present invention mainly in terms of moisture resistance, continuous repeated use characteristics, pressure resistance, use environment characteristics, and durability. Further, in the present invention, the first amorphous layer ()
Since each of the amorphous materials forming the and the second amorphous layer () has a common constituent element of silicon atoms, chemical stability can be sufficiently ensured at the laminated interface. has been done. The second amorphous layer () is an amorphous material (a-(Si _x C _1-x ,
However, it is formed with 0<x<1). a-Second amorphous layer composed of Si _x C _1-x ()
is formed by a sputtering method, an ion implantation method, an ion plating method, an electron beam method, or the like. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, amount of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured. The sputtering method or the Electron beam method and ion plating method are preferably employed. To form the second amorphous layer by the sputtering method, target a single crystal or polycrystalline Si wafer and a C wafer, or a wafer containing a mixture of Si and C. , these may be performed by sputtering in various gas atmospheres. For example, when using Si wafers and C wafers as targets, He, Ne, Ar
A sputtering gas such as the above may be introduced into a deposition chamber for sputtering to form a gas plasma, and the Si wafer and C wafer may be sputtered. Alternatively, by using a single target containing a mixture of Si and C, a gas for sputtering is introduced into the equipment system, and sputtering is performed in the gas atmosphere. will be accomplished. When using the electron beam method, single-crystal or polycrystalline high-purity silicon and high-purity graphite are placed in two evaporation boats, and each is independently co-deposited by an electron beam or simultaneously deposited. Silicon and graphite placed in a boat at a desired mixing ratio may be deposited using a single electron beam. In the case of the former, the content ratio of silicon atoms and carbon atoms contained in the second amorphous layer ( ) is controlled by changing the accelerating voltage of the electron beam with respect to silicon and graphite; In this case, it is controlled by predetermining the mixing amount of silicon and graphite. When using the ion plating method, various gases are introduced into the evaporation tank, and a high-frequency electric field is applied to a coil placed around the tank to generate a glow. Si and C are then deposited using the electron beam method. It can be vapor-deposited. The second amorphous layer ( ) in the present invention is carefully formed so as to provide the desired properties. In other words, materials whose constituent atoms are Si and C can have structural forms ranging from crystalline to amorphous, depending on the conditions for their creation, and electrical properties ranging from conductive to semiconductive to insulating. In the present invention, a-Si _x C _1-x having desired properties depending on the purpose is used. As it is formed,
The selection of the production conditions is made strictly according to desire. For example, to provide the second amorphous layer () with the main purpose of improving voltage resistance, a-Si _x C _1-x is an amorphous material that exhibits remarkable electrically insulating behavior in the usage environment Created as. In addition, if a second amorphous layer () is provided for the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the above-mentioned degree of electrical insulation will be relaxed to some extent, and it will be more effective against the irradiated light. a-Si _x C _1-x is produced as an amorphous material having a certain degree of sensitivity. When forming the second amorphous layer ( ) consisting of a-Si _x C _1-x on the surface of the first amorphous layer ( ), the temperature of the support during layer formation is It is an important factor that influences the structure and properties, and in the _{present invention} , the temperature of the support at the time of layer formation is It is desirable that the In order to effectively achieve the purpose of the present invention, the temperature of the support when forming the second amorphous layer (2) is determined as appropriate in accordance with the method of forming the second amorphous layer (2). An optimal range is selected for the formation of the second amorphous layer (), preferably between 20 and 300°C;
The optimal temperature is preferably 20 to 250°C. In order to form the second amorphous layer (), sputtering is used because fine control of the composition ratio of atoms constituting the layer and control of the layer thickness are relatively easy compared to other methods. It is advantageous to adopt the zuttering method or the electron beam method, but when forming the second amorphous layer () using these layer forming methods, the temperature during layer formation as well as the support temperature described above must be adjusted. A discharge power of a
It can be cited as one of the important factors that influence the characteristics of -Si _x C _1-x . The discharge power conditions for effectively producing a-Si _x C _1-x with the characteristics necessary to achieve the purpose of the present invention with good productivity are preferably 50W~
250W, ideally 80W to 150W. In the present invention, the preferable numerical ranges of the support temperature and discharge power for creating the second amorphous layer ( ) include the values in the above-mentioned ranges,
These layer creation factors are not determined independently and separately, but rather the desired characteristics a-Si _x C _1-x
Preferably, the optimum value of each production factor is determined based on their mutual organic relationship so that a second amorphous layer () consisting of . The amount of carbon atoms contained in the second amorphous layer (2) in the photoconductive member of the present invention is determined as desired to achieve the object of the present invention, similar to the manufacturing conditions of the second amorphous layer (2). This is an important factor in forming a layer that provides the following characteristics. The amount of carbon atoms contained in the second amorphous layer ( ) in the present invention is usually 1×10 ^-3 to
It is desirable that the content be 90 atomic %, preferably 1 to 80 atomic %, most preferably 10 to 75 atomic %. That is, if x is expressed as above a-Si _x C _1-x , x is usually 0.1 to 0.99999, preferably 0.2 to
0.99, optimally 0.25-0.9. The numerical range of the layer thickness of the second amorphous layer ( ) in the present invention is appropriately determined according to the desired purpose so as to effectively achieve the purpose of the present invention. Also, the layer thickness of the second amorphous layer () is determined depending on the amount of carbon atoms contained in the layer () and the layer thickness of the first amorphous layer (). It needs to be appropriately determined as desired based on organic relationships depending on the characteristics required for each layer region. In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production. The layer thickness of the second amorphous layer ( ) in the present invention is usually 0.003 to 30μ, preferably 0.004 to 20μ,
The optimum value is 0.005 to 10μ. The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Al,
Examples include metals such as Cr, Mo, Au, Nb, Ta, V, T, Pt, and Pd, and alloys thereof. As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if there is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Conductivity can be imparted by providing a thin film made of Pd, In ₂ O ₃ , SnO ₂ , ITO (In ₂ O ₃ +SnO ₂ ), etc., or if it is a synthetic resin film such as polyester film, NiCr, Al , Ag, Pb, Zn, Ni,
A thin film of metal such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, Conductivity is imparted to the surface. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the photoconductive member 100 in FIG. If it is used as a forming member, it is preferably in the form of an endless belt or a cylinder in the case of continuous high-speed copying. The thickness of the support is determined appropriately so that a desired photoconductive member is formed, but if flexibility is required as a photoconductive member, the support can sufficiently function as a support. If it is within the range, it will be made as thin as possible. However, in such cases, the thickness is usually 10μ or more in view of manufacturing and handling of the support, mechanical strength, etc. FIG. 2 shows the layer structure of another preferred embodiment of the photoconductive member of the present invention. The photoconductive member 200 shown in FIG. 2 differs from the photoconductive member 100 shown in FIG.
An upper auxiliary layer 204 is provided between the charge injection prevention layer 203 and the amorphous layer 205 exhibiting photoconductivity. That is, the photoconductive member 200 includes a support 201 and a lower auxiliary layer 2 laminated in this order on the support 201.
02, charge injection prevention layer 203, upper auxiliary layer 204
and a first amorphous layer ( ) 205 and a second amorphous layer ( ) 206 , the amorphous layer ( ) 206 having a free surface 207 . The upper auxiliary layer 204 is
The adhesion between the charge injection prevention layer 203 and the amorphous layer ( ) 205 is strengthened, and the electrical contact at the contact interface between both layers is made uniform. By providing the charge injection prevention layer 203, the layer quality of the charge injection prevention layer 203 is made strong. The lower auxiliary layer 202 and the upper auxiliary layer 204 constituting the photoconductive member 200 shown in FIG.
Auxiliary layer 1 constituting the photoconductive member 100 shown in the figure
Using the same amorphous material as in the case of 02, it is formed by the same layer forming procedure and conditions so as to provide similar properties. Charge injection prevention layer 203 and amorphous layer () 20
5. The amorphous layer ( ) 206 is also the charge injection prevention layer 103 and the amorphous layer ( ) 10 shown in FIG.
4. It has the same characteristics and functions as the amorphous layer ( ) 105, and is formed by the same layer forming procedure and conditions as in the case of FIG. Next, an example of the method for manufacturing a photoconductive member of the present invention will be explained with reference to the drawings. FIG. 3 shows an example of a photoconductive member manufacturing apparatus. Gas cylinders 302 to 306 in the figure are sealed with gases used to form the respective layers of the present invention.
02 is _SiH4 diluted with He (purity 99.999%,
Hereinafter, it will be abbreviated as SiH ₄ /He. ) cylinder, 303 is PH ₃ gas diluted with He (99.999% purity, hereinafter PH ₃ /
Abbreviated as He. ), 304 is NH ₃ gas (99.99% purity)
Cylinder, 305 is Ar gas cylinder, 306 is He
SiF ₄ gas diluted with (purity 99.999% or less)
SiF ₄ /He) cylinder. 342-1 and 342-2 are targets for sputtering, and according to the formation of the desired layer,
The type of target is selected as appropriate. In order to flow the various gases mentioned above into the reaction chamber 301, the valves 322 to 322 of the gas cylinders 302 to 306 are used.
326, confirm that the leak valve 335 is closed, and also confirm that the inflow valves 312 to 316, the outflow valves 317 to 321, and the auxiliary valve 332 are open, and then first close the main valve 33.
4 to exhaust the reaction chamber 301 and gas piping. Next, when the reading on the vacuum gauge 336 reaches approximately 5×10 ^-6 torr, the auxiliary valve 332 and the inflow valve 31
2-316, close the outflow valves 317-321. Thereafter, a desired gas is introduced into the reaction chamber 301 by operating the valve of the gas pipe connected to the cylinder of the gas to be introduced into the reaction chamber 301 as prescribed. Next, an example of producing a photoconductive member having a structure similar to that shown in FIG. 1 will be outlined. To form an auxiliary layer on a predetermined support 337 by sputtering, first, the shutter 342 is opened. All gas supply valves are
The reaction chamber 301 is once closed and the main valve 33
4 is fully opened to exhaust the air. A high-purity silicon wafer 342-1 and a high-purity silicon nitride wafer 3 are placed on the electrode 341 to which high-voltage power is applied.
42-2 is set as a target at a desired sputter area ratio. Ar gas is introduced into the reaction chamber 301 from the gas cylinder 305, SiF ₄ /He gas is introduced from the gas cylinder 306, and NH ₃ gas is introduced from the gas cylinder 304 as needed by operating the respective valves. Adjust the opening of the main valve 334 so that the internal pressure is 0.05 to 1 Torr. High voltage power supply 340
By turning on the silicon wafer 342-1 and the silicon nitride wafer 342-2 at the same time, an auxiliary layer made of an amorphous material consisting of silicon atoms, nitrogen atoms, and fluorine atoms is formed on the support 337. can be formed on top. The amount of nitrogen atoms contained in the auxiliary layer can be controlled as desired by adjusting the sputter area ratio of the silicon wafer and silicon nitride wafer, and the flow rate of NH ₃ gas when introducing NH ₃ gas. You can. Alternatively, this can be done by changing the mixing ratio of silicon powder and Si ₃ N ₄ powder when creating the target. At this time, during layer formation, the support body 337 is heated to a desired temperature by a heater 338. Next, after completing the formation of the auxiliary layer that forms the charge injection prevention layer on the auxiliary layer, the power supply 340 is turned off to stop the discharge, and once the valves of the entire system of piping for gas introduction of the device are closed. , the gas remaining in the reaction chamber 301 is discharged to the outside of the reaction chamber 301 to achieve a predetermined degree of vacuum. After that, the shutter 342 is closed, and SiH ₄ /He gas is supplied from the gas cylinder 302 to the gas cylinder 303.
PH ₃ /He gas from valves 322 and 32, respectively.
3 respectively, adjust the pressure of the outlet pressure gauges 327 and 328 to 1Kg/cm ² , and open the inflow valves 312 and 31 respectively.
3 gradually open the mass flow controller 30.
7 and 308, respectively. Subsequently, the outflow valves 317 and 318 and the auxiliary valve 332 are gradually opened to allow the respective gases to flow into the reaction chamber 301. At this time, the outflow valves 317 and 318 are adjusted so that the ratio of the SiH ₄ /He gas flow rate and the PH ₃ /He gas flow rate becomes the desired value, and the reaction chamber 301 is
Adjust the opening of the main valve 334 while checking the reading on the vacuum gauge 336 so that the internal pressure is at the desired value. Then, the temperature of the support body 337 is increased by the heating heater 33.
After confirming that the temperature is set in the range of 50 to 400° C. in step 8, the power source 340 is turned on and set to the desired power to generate glow discharge in the reaction chamber 301 and cause the temperature to rise above the support 337. A charge injection prevention layer is formed on the substrate. The amorphous layer () exhibiting photoconductivity provided in the charge injection prevention layer is formed by using, for example, SiH ₄ /He gas filled in the cylinder 302, and in the same manner as in the case of the charge injection prevention layer described above. This can be done using a similar procedure. In addition to SiH ₄ gas, Si ₂ H ₆ gas is particularly effective as the raw material gas used in forming the amorphous layer (2) in order to improve the layer formation rate. When containing halogen atoms in the first amorphous layer (2), the above gas may contain, for example, SiF ₄ /He.
is further added and fed into the reaction chamber 301. To form the second amorphous layer ( ) on the first amorphous layer ( ), for example, the following procedure is performed.
First, open the shutter 342. All gas supply valves are once closed, and the reaction chamber 301 is evacuated by fully opening the main valve 334. A target in which a high-purity silicon wafer 342-1 and a high-purity graphite wafer 342-2 are placed in a desired area ratio is provided in advance on the electrode 341 to which high-voltage power is applied. Ar gas is introduced into the reaction chamber 301 from the gas cylinder 305, and the main valve 334 is adjusted so that the internal pressure of the reaction chamber 301 is 0.05 to 1 torr. High voltage power supply 34
By turning 0 ON and sputtering the target, the second amorphous layer ( ) can be formed on the first amorphous layer ( ). The amount of carbon atoms contained in the second amorphous layer (2) can be determined by adjusting the sputter area ratio of the silicon wafer and graphite wafer and the mixing ratio of silicon powder and graphite powder when creating the target. Therefore, it can be controlled as desired by adjustment. Example 1 A layer was formed on an aluminum substrate using the manufacturing apparatus shown in FIG. 3 under the following conditions. The image forming member thus obtained was placed in a charging, exposing and developing device, corona charging was performed at 5 kV for 0.2 seconds, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the member by cascading a charged developer (including toner and carrier) over the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning process was repeated again. No deterioration of the image was observed even after repeating the test over 150,000 times.

[Table] Example 2 A layer was formed on an Al substrate under the following conditions using the manufacturing apparatus shown in FIG. Other conditions were the same as in Example 1. The image forming member thus obtained was placed in a charging, exposing and developing device, corona charging was performed at 5 kV for 0.2 seconds, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the member by cascading a charged developer (including toner and carrier) over the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning steps were repeated again. No deterioration of the image was observed even after repeating the process over 100,000 times.

[Table] Example 3 A layer was formed on an Al substrate under the following conditions using the apparatus shown in FIG. Other conditions were the same as in Example 1. The image forming member thus obtained was placed in a charging, exposing and developing device, corona charging was performed at 5 kV for 0.2 seconds, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a charged developer (including toner and carrier) was escaped onto the surface of the member, thereby obtaining a good toner image with extremely high density on the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning steps were repeated again. No deterioration of the image was observed even after repeating the test over 150,000 times.

[Table] Example 4 When forming the amorphous layer (), other than changing the area ratio of the silicon wafer and graphite to change the content ratio of silicon atoms and carbon atoms in the amorphous layer () An image forming member was prepared in exactly the same manner as in Example 1. The image forming member thus obtained was subjected to the image forming, developing and cleaning steps as described in Example 1 about 50,000 times and then subjected to image evaluation, and the results shown in Table 4 were obtained.

[Table] ◎: Very good ○: Good △: Sufficient for practical use
×: Image defects occur Example 5 An image forming member was prepared in the same manner as in Example 1 except that the thickness of the amorphous layer ( ) was changed. The steps of image formation, development, and cleaning as described in Example 1 were repeated to obtain the following results.

【table】

[Table] Example 6 An image forming member was prepared in the same manner as in Example 1, except that the method of forming the layers other than the amorphous layer () was changed as shown in the table below, and evaluation was performed in the same manner as in Example 1. I tried it and got good results.

[Table] Example 7 An image forming member was prepared in the same manner as in Example 1, except that the method of forming the layers other than the amorphous layer () was changed as shown in the table below, and evaluation was performed in the same manner as in Example 1. When I tried it, I got good results.

[Table] Example 8 In Examples 1, 2, 3, 6, and 7, the conditions and procedures in each example were followed except that the formation of the amorphous layer () was performed under the conditions shown in the table below. Therefore, when an image forming member was prepared and evaluated in the same manner as in each example, good results were obtained.

【table】 [Brief explanation of drawings]

1 and 2 are schematic configuration diagrams showing the configuration of preferred embodiments of the photoconductive member of the present invention, and FIG. 3 is a schematic diagram of an apparatus for manufacturing the photoconductive member of the present invention. FIG. 2 is a schematic explanatory diagram showing an example. 100,200...Photoconductive member, 101,20
1...Support, 102,202,204...Auxiliary layer, 103,203...Charge injection prevention layer, 10
4,205...Amorphous layer (), 105,206
...Amorphous layer (), 106,207...Free surface.

Claims (1)

[Claims] 1 A support for a photoconductive member, with a silicon atom as a matrix and a halogen atom as a constituent atom.
An auxiliary layer made of an amorphous material containing less than 30 atomic% of nitrogen atoms, and an amorphous material made of silicon atoms as a matrix and containing atoms belonging to group 3 of the periodic table as constituent atoms. Layer thickness 0.3~
a 5 μm charge injection prevention layer, a first amorphous layer that is made of an amorphous material with silicon atoms as a matrix and exhibits photoconductivity; 1. A photoconductive member comprising a second amorphous layer made of an amorphous material containing carbon atoms as constituent atoms.