JPH0368384B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to light (here, light in a broad sense, including ultraviolet rays, visible rays, infrared rays, X-rays, γ-rays, etc.)
It relates to photoconductive members sensitive to electromagnetic waves such as. As a photoconductive material for forming a photoconductive layer in a solid-state imaging device, an electrophotographic image forming member in the image forming field, or a document reading device, it is highly sensitive,
Must have a high signal-to-noise ratio [photocurrent (Ip)/dark current (Id)], have absorption spectral characteristics that match the spectral characteristics of the irradiated electromagnetic waves, have fast photoresponsiveness, and have the desired dark resistance value. At times, solid-state imaging devices are required to have characteristics such as being non-polluting to the human body and being able to easily process afterimages within a predetermined time.
Particularly in the case of an electrophotographic image forming member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-polluting property during use is an important point. Based on these points, amorphous silicon (hereinafter referred to as a-Si) is a photoconductive material that has recently attracted attention. As a photographic image forming member, application to a photoelectric conversion reader is described in DE 2933411. However, conventional photoconductive members having a photoconductive layer composed of a-Si have poor electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsiveness, and use environment characteristics. In terms of stability, stability over time, and durability, each individual property has been improved, but the reality is that there is still room for further improvement in terms of overall property improvement. be. For example, when applied to electrophotographic image forming members, when trying to achieve high photosensitivity and high dark resistance at the same time, it has often been observed in the past that residual potential remains during use, and this type of photoconductive member When used repeatedly for a long period of time, fatigue accumulates due to repeated use, resulting in a so-called ghost phenomenon in which an afterimage occurs. When the photoconductive layer is made of a-Si material, in order to improve its electrical and photoconductive properties, hydrogen atoms, halogen atoms such as fluorine atoms and chlorine atoms, and electrically conductive Boron atoms, phosphorus atoms, etc. are included for control purposes, and other atoms are included as constituent atoms in the photoconductive layer for the purpose of improving other properties. In some cases, problems may arise in the electrical or photoconductive properties or voltage resistance of the formed layer. That is, for example, the lifetime of photocarriers generated by light irradiation in the formed photoconductive layer is not sufficient, or the injection of charge from the support side is not sufficiently prevented in dark areas, or ,
For example, there may be image defects commonly called "white spots" on images transferred to transfer paper, which are thought to be caused by localized discharge breakdown phenomena, or defects that may be caused by rubbing when a blade is used for cleaning, for example. A so-called image defect called "white stripe" may occur. Furthermore, when used in a humid atmosphere or immediately after being left in a humid atmosphere for a long time, so-called blurring of the image often occurs. Furthermore, if the layer thickness exceeds 10 microns or more, the layer may lift or peel off from the surface of the support, or cracks may develop as the time passes for the layer to stand in the air after being removed from the vacuum deposition chamber for layer formation. You can win by causing phenomena such as ``happening''. This phenomenon often occurs especially when the support is a drum-shaped support commonly used in the field of electrophotography, and there are points that can be solved in terms of stability over time. . Therefore, while efforts are being made to improve the properties of the a-Si material itself, it is necessary to take measures to solve all of the above-mentioned problems when designing photoconductive members. The present invention has been made in view of the above points, and includes a
-As a result of intensive research and study on Si from the viewpoint of its applicability as a photoconductive member used in electrophotographic image forming members, solid-state imaging devices, reading devices, etc., we found that silicon atoms an amorphous material containing at least either a hydrogen atom (H) or a halogen atom (X),
A photoconductive material composed of so-called hydrogenated amorphous silicon, halogenated amorphous silicon, or halogen-containing hydrogenated amorphous silicon (hereinafter "a-Si(H,X)" is used as a generic term for these). A photoconductive member designed and produced by specifying the layer structure of the photoconductive member as explained below not only exhibits extremely superior properties in practical use, but also has superior properties compared to conventional photoconductive members. This is based on the fact that it has been found to be superior in all respects, especially when compared, and has particularly excellent properties as a photoconductive material for electrophotography. The electrical, optical, and photoconductive properties of the present invention are virtually always stable regardless of the environment in which it is used, and it is extremely resistant to light fatigue and does not deteriorate even after repeated use, making it durable. The main object of the present invention is to provide a photoconductive member that has excellent moisture resistance and has no or almost no residual potential observed. Another object of the present invention is to provide excellent adhesion between a layer provided on a support and the support and between each laminated layer, to provide a dense and stable structural arrangement, and to provide layer quality. It is an object of the present invention to provide a photoconductive member with high quality. Another object of the present invention is that when applied as an electrophotographic image forming member, it has sufficient charge retention ability during charging processing for electrostatic image formation, and ordinary electrophotographic methods can be applied extremely effectively. An object of the present invention is to provide a photoconductive member having excellent electrophotographic properties. Still another object of the present invention is to provide high density images without any image defects or blurring during long-term use.
An object of the present invention is to provide a photoconductive member for electrophotography in which it is possible to easily obtain high-quality images with clear halftones and high resolution. Yet another object of the present invention is high photosensitivity,
Another object of the present invention is to provide a photoconductive member having high signal-to-noise ratio characteristics and high voltage resistance. The photoconductive member of the present invention includes a support for the photoconductive member, a silicon atom as a base material, and 1 as a constituent atom.
~20 atomic% halogen atoms and 1×
An auxiliary layer made of an amorphous material containing nitrogen atoms of 10 ^-3 atomic% or more and up to 30 atomic%, and an amorphous material whose base material is silicon atoms and which contains atoms belonging to group of the periodic table as constituent atoms. a charge injection prevention layer made of a transparent material; and a first layer made of an amorphous material that has silicon atoms as its base material and contains at least one of hydrogen atoms or halogen atoms as constituent atoms, and exhibits photoconductivity. an amorphous layer; and a second amorphous layer made of an amorphous material containing silicon atoms, carbon atoms, and halogen atoms as constituent atoms on the first amorphous layer. A photoconductive member characterized by: The photoconductive member of the present invention designed to have the above-mentioned layer structure can solve all of the above-mentioned problems, and has extremely excellent electrical, optical, photoconductive properties, and pressure resistance. and usage environment characteristics. In particular, when applied as an electrophotographic image forming member, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it is highly sensitive and has high
It has a high signal-to-noise ratio, has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution. In addition, the photoconductive member of the present invention has an amorphous layer formed on the support, which is strong and has excellent adhesion to the support, and can be continuously used at high speed for a long time. Can be used repeatedly. Hereinafter, the photoconductive member of the present invention will be explained in detail with reference to the drawings. FIG. 1 is a schematic configuration diagram schematically shown to explain the layer configuration of a photoconductive member according to a first embodiment of the present invention. The photoconductive member 100 shown in FIG. 1 is made of an amorphous material that uses silicon atoms as a matrix and contains less than 30 atomic percent of halogen atoms and nitrogen atoms as constituent atoms, on a support 101 for photoconductive members. auxiliary layer 102, charge injection prevention layer 103, first amorphous layer ( ) 104 having photoconductivity, and second amorphous layer ( ) 105, the amorphous layer ( ) 105 has It has a free surface 106. The auxiliary layer 102 is provided mainly for the purpose of measuring the adhesion between the support 101 and the charge injection prevention layer 103.
It is made of a material that has the characteristics described below so that it is compatible with both. The charge injection prevention layer 103 mainly has the function of effectively preventing charge from being injected from the support 101 side into the first amorphous layer ( ) 104 when the free surface 106 is charged. . The first amorphous layer ( ) 104 is the layer ( ) 1
The layer is exposed to light irradiation sensitive to 04 () 10
4, it has the function of generating a photo carrier and transporting the photo carrier in a predetermined direction. The auxiliary layer in the present invention is made of silicon atoms (Si).
It contains a nitrogen atom (N) and a halogen atom (X) as constituent atoms, and a hydrogen atom (H) as necessary, and the nitrogen atom (N) content C _(N) is
Amorphous materials (hereinafter referred to as “a-
(Si _a N _1-a ) _b (H,X) _1-b ”. However, 0.6<
a, 0.8≦b). The auxiliary layer composed of a-(Si _a N _1-a ) _b (H,X) _1-b can be formed by glow discharge method, sputtering method,
This is done by ion implantation method, ion plating method, electron beam method, etc. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, amount of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured. It is relatively easy to control the manufacturing conditions for manufacturing a photoconductive member having the above-mentioned photoconductive member. The glow discharge method or the sputtering method is preferably employed because of the advantages that nitrogen atoms and halogen atoms can be easily introduced into the auxiliary layer to be produced together with silicon atoms. Furthermore, in the present invention, the auxiliary layer may be formed by using both the glow discharge method and the sputtering method within the same apparatus system. To form the auxiliary layer by glow discharge method a.
−(Si _a N _1-a ) _b (H, X) The raw material gas for forming _1-b is
If necessary, it is mixed with a dilution gas at a predetermined mixing ratio and introduced into a deposition chamber for vacuum deposition where a support is installed, and a glow discharge is caused in the introduced gas atmosphere. A-( _Sia N _1-a ) _b (H,X) _1-b may be deposited on the support by converting it into gas plasma. In the present invention, a-(S _a N _1-a ) _b (H,X) _1-b
As the raw material gas for formation, most of gaseous substances containing at least one of Si, N, and X as a constituent atom or gasified substances that can be gasified can be used. When using a raw material gas containing Si as one of Si, N, and X, for example, a raw material gas containing Si as a constituent atom, a raw material gas containing N as a constituent atom, and a raw material gas containing Alternatively, a raw material gas containing Si and a raw material gas containing N and X may be mixed at a desired mixing ratio. Can be used by mixing. Alternatively, a raw material gas containing Si and X as constituent atoms may be mixed with a raw material gas containing N as constituent atoms. In the present invention, preferred halogen atoms X are F, Cl, Br, and I, with F and Cl being particularly preferred. In the present invention, the auxiliary layer is composed of an amorphous material containing silicon atoms, nitrogen atoms, and halogen atoms, but as described above, the auxiliary layer may further contain hydrogen atoms. I can do it. The inclusion of hydrogen atoms in the auxiliary layer is advantageous in terms of production costs, since it is possible to share some of the raw material gas types when forming a continuous layer with the charge injection prevention layer and the amorphous layer. . In the present invention, starting materials that can be used as raw material gases that can be effectively used to form the auxiliary layer include those in a gaseous state at room temperature and normal pressure, or substances that can be easily gasified. . Examples of starting materials for forming such an auxiliary layer include nitrogen, nitrides, nitrogen compounds such as fluorinated nitrogen and azides, simple halogens, hydrogen halides,
Examples include interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, and silicon hydrides. Specifically, nitrogen (N ₂ ), nitrogen compounds such as ammonia (NH ₃ ), hydrazine (H ₂ NNH ₂ ),
Nitrogen trifluoride (F ₃ N), nitrogen tetrafluoride (F ₄ N ₂ ), hydrogen azide (HN ₃ ), ammonium azide (NH ₄ N ₃ )
etc., halogen gases include fluorine, chlorine, bromine, and iodine; hydrogen halides include FH, HI, HCl, and HBr; halogen compounds include BrF, ClF, ClF ₃ , ClF ₅ , BrF ₅ , _BrF3 ,
IF ₇ , IF ₅ , ICl, IBr, silicon halide
_SiF4 , _{Si2F6 , SiCl4} , _SiCl3Br , _{SiCl2Br2 ,}
SiClBr ₃ , SiCl ₃ I, SiBr ₄ , halogen-substituted silicon hydrides include SiH ₂ F ₂ , SiH ₂ Cl ₂ , SiHCl ₃ ,
SiH ₃ Cl, SiH ₃ Br, SiH ₂ Br ₂ , SiHBr ₃ , examples of silicon hydride include silanes such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , etc. I can do it. These starting materials for forming the auxiliary layer are used in such a way that the auxiliary layer to be formed contains silicon atoms, nitrogen atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio. They are selected and used as desired during layer formation. For example, SiH ₄ or Si ₂ H ₆ can easily contain silicon atoms and hydrogen atoms and form an auxiliary layer with desired characteristics, and N ₂ or NH ₃ can contain nitrogen atoms. SiF ₄ , SiH ₂ F ₂ , SiHCl ₃ , SiCl ₄ as a substance containing a halogen atom,
The auxiliary layer can be formed by introducing SiH ₂ Cl ₂ , SiH ₃ Cl, or the like in a gaseous state at a predetermined mixing ratio into an apparatus system for forming the auxiliary layer and causing glow discharge. Alternatively, _the auxiliary layer to be formed may contain He, Ne, _Ne , It is also possible to form an auxiliary layer by introducing it together with a rare gas such as Ar into an apparatus system for forming an intermediate layer to generate glow discharge. To form the auxiliary layer by the sputtering method, target a high-purity single crystal or polycrystalline Si wafer, a Si ₃ N ₄ wafer, or a wafer formed by mixing Si and Si ₃ N ₄ , These may be performed by sputtering in various gas atmospheres containing halogen atoms and, if necessary, hydrogen atoms as constituent elements. For example, if a Si wafer is used as a target, the raw material gas for introducing N and The Si wafer may be sputtered by forming plasma. Alternatively, by using Si and Si ₃ N ₄ as separate targets or by using a single target formed by mixing Si and Si ₃ N ₄ , a gas containing at least halogen atoms can be produced. This is done by sputtering in an atmosphere. As the raw material gas for introducing N, X, and H if necessary, the starting material for forming the auxiliary layer shown in the glow discharge example described above is also used as an effective material in the sputtering method. can be done. In the present invention, the diluting gas used when forming the auxiliary layer by the glow discharge method or sputtering method is a so-called rare gas, such as He, Ne,
Ar and the like can be cited as suitable examples. a-(Si _a N _1-a ) _b constituting the auxiliary layer of the present invention
(H _, Therefore, the conditions for forming the auxiliary layer are carefully selected and carefully selected so that the properties required for the auxiliary layer are imparted as desired. a-(Si _a
N 1 _{- a} ) _b (H, That is, a-(Si _a N _1-a ) _b (H,
X) When forming the auxiliary layer consisting of _1-b , the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer.
a-(Si _a N _1-a ) _b (H,
X) The temperature of the support during layer formation is strictly controlled so that _1-b can be formed as desired. In order to effectively achieve the desired purpose of the present invention, the temperature of the support when forming the auxiliary layer is appropriately selected in the optimum range according to the method of forming the auxiliary layer. The formation is usually carried out at temperatures between 50 and 350°C, preferably between 100 and 250°C. To form the auxiliary layer, it is possible to continuously form the auxiliary layer, the charge injection prevention layer, the amorphous layer, and even other layers formed on the amorphous layer as necessary in the same system. Because it is relatively easy to finely control the composition ratio of atoms that make up each layer and control the layer thickness compared to other methods,
It is advantageous to employ the glow discharge method or the sputtering method, but when forming an auxiliary layer using these layer formation methods, the discharge power and gas pressure during layer formation, as well as the support temperature described above, must be adjusted. is created a−(Si _a
N _1-a ) _b (H, X) can be cited as an important factor that influences the characteristics of _1-b . As a discharge power condition for effectively producing a-(Si _a N _{1 -b} ) _b (H, teeth,
Usually 1 to 300W, preferably 2 to 100W. The gas pressure in the deposition chamber is usually 0.01 to 5 Torr when layer formation is performed using the glow discharge method, preferably
When forming a layer by sputtering at a pressure of about 0.1 to 0.5 Torr, it is usually 1×10 ^-3 to 5×
10 ^-2 Torr, preferably about 8 x 10 ^-3 to 3 x 10 ^-2 Torr. The amounts of nitrogen atoms and halogen atoms contained in the auxiliary layer in the photoconductive member of the present invention are determined so that the auxiliary layer can obtain the desired characteristics to achieve the object of the present invention, as well as the conditions for producing the auxiliary layer. This is an important factor for The amount C _(N) of nitrogen atoms contained in the auxiliary layer in the present invention is usually within the above-mentioned value range, but preferably 1×10 ^-3 when expressed in atomic%.
It is desirable that ≦C _(N) <30, more preferably 1≦C _(N) <30, optimally 10≦C _(N) <30. Further, the amount of halogen atoms (X) is preferably 1 to 20 atomic%, optimally 2 to 15 atomic%, and when hydrogen atoms (H) are included, the amount is It is preferably 19 atomic % or less, most preferably 13 atomic % or less.
a-(Si _a N _1-a ) _b (H,X) _1-b , the value of a is preferably 0.6<a≦
0.99999, more preferably 0.6<a≦0.99, optimally
0.6<a≦0.9, preferably the value of b is 0.8≦b≦
It is more preferable that b is 0.85≦b≦0.98 than 0.99. The numerical range of the layer thickness of the auxiliary layer in the present invention is appropriately determined as desired so as to ultimately achieve the object of the present invention. In order to effectively achieve the purpose of the present invention, the thickness of the auxiliary layer is usually 30〓~2μ, preferably
It is desirable that the thickness be 40 Å to 1.5 μ, most preferably 50 Å to 1.5 μ. The charge injection prevention layer constituting the photoconductive member of the present invention has a silicon atom (Si) as its base material, and preferably contains an atom belonging to a group of the periodic table (a group atom) and a hydrogen atom (H) or a halogen atom. (X), or both of these as constituent atoms (hereinafter referred to as "a"
-Si ₍ , H _, be determined accordingly. The layer thickness t of the charge injection prevention layer in the present invention is preferably 0.3 to 5μ, more preferably 0.5 to 2μ.
It is desirable that the content of group atoms is
C ₍ 〓 ₎ is preferably 1×10 ² to 1×
10 ⁵ atomic ppm, preferably 5×10 ² to 1×
It is desirable to set it to 10 ⁵ atomic ppm. In the present invention, the atoms belonging to group of the periodic table contained in the charge injection prevention layer are B (boron), Al (aluminum), Ga (gallium), In (indium), Tl ( thallium) etc.
Particularly preferably used are B and Ga. In the present invention, specific examples of the halogen atom (X) contained in the charge injection prevention layer if necessary include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such. Methods for forming the charge injection prevention layer composed of a-Si (, H, X) include glow discharge method, sputtering method, ion implantation method,
Examples include ion plating method and electron beam method. These manufacturing methods are based on manufacturing conditions,
The method is selected and adopted as appropriate depending on factors such as the level of equipment capital investment, production scale, and the desired characteristics of the photoconductive member to be manufactured. It is relatively easy to control the conditions, and it is easy to introduce group group atoms and, if necessary, hydrogen atoms (H) and halogen atoms (X) into the charge injection prevention layer to be prepared, along with silicon atoms. Due to their advantages, the glow discharge method or the sputtering method is preferably employed. Furthermore, in the present invention, the charge injection prevention layer may be formed by using both the glow discharge method and the sputtering method in the same apparatus system. For example, a-Si (,
In order to form a charge injection prevention layer composed of H, A raw material gas for introducing hydrogen atoms (H) and/or a raw material gas for introducing halogen atoms (X) as necessary is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. a-Si is deposited on the auxiliary layer of a predetermined support that has been placed in a predetermined position and has already been provided with an auxiliary layer.
A layer consisting of (, H, X) may be formed.
In addition, when forming by a sputtering method, for example, when sputtering a target composed of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, it is necessary to introduce group atoms. The source gas for sputtering may be introduced into the deposition chamber for sputtering together with a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as necessary. The following are effective starting materials for the raw material gas used to form the charge injection prevention layer in the present invention. First, silicon hydride (silanes) in a gaseous state or capable of being gasified, such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , etc., is effective as the starting material that becomes the raw material gas for supplying Si. It is cited as a material used in the production of silicon, especially in terms of ease of layer creation work and good Si supply efficiency.
Preferred examples include SiH ₄ and Si ₂ H ₆ . By using these starting materials, it is possible to introduce H as well as Si into the auxiliary layer formed by appropriately selecting the layer forming conditions. In addition to the above-mentioned silicon hydride, effective starting materials that serve as raw material gas for supplying Si include silicon compounds containing a halogen atom (X), so-called silane derivatives substituted with a halogen atom, specifically, for example,
Preferred examples include silicon halides such as SiF ₄ , Si ₂ F ₆ , SiCl ₄ , and SiBr ₄ , and further examples include SiH ₂ F ₂ , SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ ,
Halogen-substituted silicon hydrides such as SiH ₂ Br ₂ and SiHBr ₃ ,
Gaseous or gasifiable halides containing hydrogen atoms as one of their constituents can also be cited as starting materials for supplying Si for forming an effective charge injection prevention layer. Even when these silicon compounds containing halogen atoms (X) are used, the charge injection prevention layer formed by appropriately selecting the layer formation conditions as described above can be used.
X can be introduced together with Si. The silicon halide compound containing a hydrogen atom in the above-mentioned starting material is a hydrogen atom (H ) is also introduced, so it is used as a suitable starting material for introducing a halogen atom (X) in the present invention. In addition to the above-mentioned materials, examples of effective starting materials as raw material gases for introducing halogen atoms (X) used in forming the auxiliary layer in the present invention include halogen atoms such as fluorine, chlorine, bromine, and iodine. Gas, BrF, ClF, ClF ₃ , BrF ₅ , BrF ₃ , IF ₃ , IF ₇ ,
Interhalogen compounds such as ICl, IBr, HF, HCl,
Examples include hydrogen halides such as HBr and HI. In order to structurally introduce group atoms into the charge injection prevention layer, during layer formation, a starting material for introducing group atoms is placed in a gaseous state in a deposition chamber, and other materials are used to form the charge injection prevention layer. It may be introduced together with the starting material. Possible starting materials for the introduction of group atoms include those that are gaseous at room temperature and pressure, or
It is desirable to use a material that can be easily gasified at least under layer forming conditions. Specifically, starting materials for introducing such group group atoms include B 2 H 6 , B ₂ H ₆ ,
B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H ₁₀ , B ₆ H ₁₂ , B ₆ H ₁₄
Examples include boron hydrides such as BF ₃ , BCl ₃ , BBr ₃ and other boron halides. In addition, AlCl ₃ ,
GaCl ₃ , Ga(CH ₃ ) ₃ , InCl ₃ , TlCl ₃ and the like may also be mentioned. In the present invention, in order to provide charge injection preventing properties, the group atoms contained in the charge injection preventing layer are arranged in a plane substantially parallel to the layer thickness direction of the charge injection preventing layer (parallel to the surface of the support). It is preferable that the particles be distributed substantially uniformly in the plane and in the layer thickness direction. In addition, when forming a charge injection prevention layer by a sputtering method, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, The raw material gas for introducing group atoms may be introduced into the vacuum deposition chamber in which sputtering is performed together with the raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as necessary. In the present invention, the content of group atoms introduced into the charge injection prevention layer is determined by the gas flow rate of the starting material for introducing group atoms introduced into the deposition chamber, the gas flow rate ratio, the discharge power, and the support. It can be arbitrarily controlled by controlling body temperature, pressure inside the deposition chamber, etc. In the present invention, the diluent gas used when forming the charge injection prevention layer by the glow discharge method or sputtering method is a so-called rare gas, such as He,
Preferable examples include Ne, Ar, and the like. In the present invention, a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method is used to form the amorphous layer (I) composed of a-Si(H,X). It is made by vacuum deposition method. For example, by glow discharge method,
In order to form an amorphous layer ( ) composed of a-Si (H,
A raw material gas for introducing (H) and/or for introducing halogen atoms (X) is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-Si(H,X) may be formed on the surface of a certain predetermined support. In addition, when forming by sputtering method,
For example, for introducing hydrogen atoms (H) and/or halogen atoms (X) when sputtering a target composed of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases. It is sufficient to introduce this gas into the deposition chamber for sputtering. In the present invention, an amorphous layer () may be added as necessary.
Examples of the halogen atoms (X) contained therein include those mentioned in the case of the charge injection prevention layer. In the present invention, the raw material gas for supplying Si used when forming the amorphous layer ( ) includes SiH ₄ , which was mentioned when explaining the charge injection prevention layer.
Gaseous or gasifiable silicon hydrides (silanes) such as Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ can be used effectively, and in particular, they are easy to handle in layer forming operations. SiH ₄ , Si ₂ H ₆ in terms of good Si supply efficiency, etc.
are listed as preferred. In the present invention, many halogen compounds are effective as the raw material gas for introducing halogen atoms used when forming the amorphous layer (), as in the case of the charge injection prevention layer, such as halogen gas, halogen Preferred examples include halogen compounds in a gaseous state or which can be gasified, such as compounds, interhalogen compounds, and halogen-substituted silane derivatives. Furthermore, silicon compounds containing halogen atoms, which are in a gaseous state or can be gasified and whose constituent elements are silicon atoms (Si) and halogen atoms (X), are also effective in the present invention. I can do it. In the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the charge injection prevention layer amorphous layer () of the photoconductive member to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the quantities (H+X) is usually 1 to 40 atomic %, preferably 5 to 30 atomic %. Hydrogen atoms (H) and/or halogen atoms (X) contained in the charge injection prevention layer or the amorphous layer ()
For example, the amount of the starting material introduced into the deposition apparatus system used to contain hydrogen atoms (H) or halogen atoms (X), the temperature of the support, and/or the discharge rate can be controlled. All you have to do is control the force. In the present invention, the diluting gas used when forming the amorphous layer () by the glow discharge method or the sputtering gas used when forming the amorphous layer by the sputtering method is a so-called rare gas. ,for example
Preferred examples include He, Ne, Ar, and the like. In the present invention, the thickness of the amorphous layer ( ) is determined as appropriate depending on the characteristics required of the photoconductive member to be produced, but is usually 1 to 1.
It is desirable that the thickness be 100μ, preferably 1 to 80μ, optimally 2 to 50μ. In the photoconductive member 100 shown in FIG. 1, the second amorphous layer ( ) 105 formed on the first amorphous layer ( ) 104 has a free surface 106 and is primarily moisture resistant. properties, continuous repeated use characteristics, pressure resistance,
This is provided in order to achieve the objectives of the present invention in terms of usage environment characteristics and durability. Further, in the present invention, the first amorphous layer ()
102 and the second amorphous layer ( ) 105 each have a common constituent element of silicon atoms, ensuring chemical stability at the laminated interface. It is fully accomplished. The second amorphous layer ( ) 105 is an amorphous material [a-(Si _x C _1-x ) _y X _1-y , where 0<x,
y<1]. The second amorphous layer ( ) composed of a-( _{Si x} C _1-x ) _y This is done by the beam method, etc. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, amount of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured. It is relatively easy to control the manufacturing conditions for manufacturing a photoconductive member having silicon atoms, and carbon atoms and halogen atoms can be easily introduced into the second amorphous layer (2) to be manufactured. Due to these advantages, the glow discharge method or the sputtering method is preferably employed. Furthermore, in the present invention, the second amorphous layer ( ) may be formed by using a glow discharge method and a sputtering method in the same apparatus system. To form the second amorphous layer () by the glow discharge method, the raw material gas for forming a-(Si _x C _1-x ) _y X _1-y is mixed with a diluting gas as necessary. The mixture is mixed at a predetermined mixing ratio and introduced into a deposition chamber for vacuum deposition in which a support is installed, and the introduced gas is turned into gas plasma by generating a glow discharge, and is deposited on the support. What is necessary is to deposit a-(Si _x C _1-x ) _y X _1-y on the already formed first amorphous layer ( ). In the present invention, at least one of silicon atoms (Si), carbon atoms (C), and hydrogen atoms (H) is used as the raw material gas for forming a-(Six _1-x ) _y X _1-y. Most gaseous substances or gasified substances that can be gasified as constituent atoms can be used. When using a raw material gas containing Si as one of Si, C, and H, for example, a raw material gas containing Si as a constituent atom, a raw material gas containing C as a constituent atom, and a raw material gas containing X as a constituent atom. A raw material gas containing Si as a constituent atom and a raw material gas containing C and X as constituent atoms may be mixed at a desired mixing ratio. Mix or
Alternatively, a raw material gas containing Si as a constituent atom and Si, C
and a raw material gas having three constituent atoms of X can be used in combination. Alternatively, a raw material gas containing Si and X as constituent atoms may be mixed with a raw material gas containing C as constituent atoms. In the present invention, F, Cl, Br, and I are preferable as the halogen atoms (X) contained in the second amorphous layer (), with F and Cl being particularly preferable. In the present invention, the second amorphous layer (a)
-(Si _x C _1-x ) _y X _1-y , but it is possible to further contain a hydrogen atom. The inclusion of hydrogen atoms in the second amorphous layer () is
This is advantageous in terms of production costs because it is possible to share some of the raw material gas types when forming a continuous layer with the first amorphous layer (2). In the present invention, raw material gases that can be effectively used to form the second amorphous layer () include those in a gaseous state at room temperature and pressure, or those that can be easily gasified. Can list substances. Examples of the substance for forming the second amorphous layer include saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, and 2 to 3 carbon atoms.
acetylenic hydrocarbons, elemental halogens, hydrogen halides, interhalogen compounds, silicon halides,
Examples include halogen-substituted silicon hydride and silicon hydride. Specifically, saturated hydrocarbons include methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), n
-Butane (n _{- C4H10} ) _, pentane ( _C5H12 ), _ethylene hydrocarbons include ethylene ( _C2H4 ),
Propylene (C ₃ H ₆ ), butene-1 (C ₄ H ₈ ), butene-2 (C ₄ H ₈ ), isobutylene (C ₄ H ₈ ), pentene (C ₅ H ₁₀ ), acetylenic hydrocarbons ,
Acetylene (C ₂ H ₂ ), methylacetylene (C ₃ H ₄ ), butyne (C ₄ H ₆ ), halogen gases include fluorine, chlorine, bromine, and iodine; hydrogen halides include FH, HI, HCl,
HBr, interhalogen compounds include BrF, ClF,
_ClF3 , _ClF5 , _BrF5 , _BrF3 , _IF7 , _IF5 , ICl, IBr,
Examples of silicon halides include SiF ₄ , Si ₂ F ₆ , SiCl ₄ ,
_SiCl3Br , _{SiCl2Br2 , SiClBr3} , _SiCl3I , _SiBr4 ,
Examples of halogen-substituted silicon hydride include SiH ₂ F ₂ ,
SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₃ Cl, SiH ₃ Br, SiH ₂ Br ₂ ,
SiHBr ₃ , as silicon hydride, SiH ₄ , Si ₂ H ₈ ,
Silanes such as Si ₄ H ₁₀ , etc. can be mentioned. In addition to these, CCl ₄ , CHF ₃ , CH ₂ F ₂ , CH ₃ F,
Halogen-substituted paraffin hydrocarbons such as CH ₃ Cl, CH ₃ Br, CH ₃ I, C ₂ H ₅ Cl, fluorinated sulfur compounds such as SF ₄ and SF ₆ , Si(CH ₃ ) ₄ , Si(C ₂ Alkyl silicides such as H ₆ ) ₄ , SiCl (CH ₃ ) ₃ , SiCl ₂ (CH ₃ ) ₂ ,
Silane derivatives such as halogen-containing alkyl silicides such as SiCl ₃ CH ₃ can also be mentioned as effective. These second amorphous layer () forming substances contain silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio in the second amorphous layer () to be formed. It is selected and used as desired when forming the second amorphous layer (2) so that it contains atoms. For example, Si(CH ₃ ) ₄ can easily contain silicon atoms, carbon atoms, and hydrogen atoms and can form a layer with desired characteristics, and SiHCl ₃ and SiCl can contain halogen atoms. ₄ , SiH ₂ Cl ₂ , or SiH ₃ Cl, etc. at a predetermined mixing ratio and introduced in a gas state into the apparatus for forming the second amorphous layer () to generate a glow discharge. −(Si _x
A second amorphous layer ( ) consisting of C _1-x ) _y (Cl+H) _1-y can be formed. To form the second amorphous layer () by the sputtering method, target a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Si and C; These may be performed by sputtering in various gas atmospheres containing halogen atoms and, if necessary, hydrogen atoms as constituent elements. For example, if a Si wafer is used as a target, the raw material gas for introducing C and The Si wafer may be sputtered by forming plasma. Alternatively, sputtering can be carried out in a gas atmosphere containing at least halogen atoms by using separate targets for Si and C or by using a single target in which Si and C are mixed. It is accomplished by doing so. C and X, H as necessary
The material for forming the second amorphous layer shown in the glow discharge example described above can also be used as a material gas for the sputtering method. In the present invention, so-called rare gases such as He, Ne, Ar, etc. can be used as the diluting gas when forming the second amorphous layer () by the glow discharge method or the sputtering method. It can be mentioned as a suitable one. The second amorphous layer ( ) in the present invention is carefully formed so as to provide the desired properties. In other words, substances whose constituent atoms are Si, C, X, and optionally H can have a structure ranging from crystalline to amorphous depending on the conditions for their creation, and electrically conductive to semiconducting. In the present invention, a- (Si _x
The preparation conditions are strictly selected according to the desired conditions so that C _1-x ) _y X _1-y is formed. For example _, to provide the second amorphous layer () with the main purpose of improving voltage resistance, a-(Si _x C _1-x ) _y Created as a distinctly amorphous material. In addition, if a second amorphous layer () is provided for the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the above-mentioned degree of electrical insulation will be relaxed to some extent, and it will be more effective against the irradiated light. As an amorphous material with a certain degree of sensitivity, a-(Si _x C _1-x ) _y
X _1-y is created. a−(Si _x C _1-x ) _y on the surface of the first amorphous layer ()
When forming the _second amorphous layer () consisting of In this case, a-(Si _x
It is desirable that the temperature of the support during layer formation be strictly controlled so that C _1-x ) _y X _1-y can be formed as desired. In the present invention, the second amorphous layer () is formed by selecting an optimal range as appropriate in accordance with the method of forming the second amorphous layer () in order to effectively achieve the desired purpose. formation is performed, but typically 50~
The temperature is desirably 350°C, preferably 100-250°C. In order to form the second amorphous layer (2018), we use a glow method, as it is relatively easy to finely control the composition ratio of the atoms that make up the layer and control the layer thickness compared to other methods. It is advantageous to adopt the discharge method or the sputtering method, but when forming the second amorphous layer () using these layer formation methods, the temperature during layer formation as well as the support temperature described above must be adjusted. The discharge power is one of the important factors that influences the characteristics of a-(Si _x C _1-x ) _y X _1-y created. _The discharge power condition for effectively producing a-(Si _x C _1-x ) _y
300W, preferably 20-200W. It is desirable that the gas pressure in the deposition chamber is usually about 0.01 to 1 Torr, preferably about 0.1 to 0.5 Torr. In the present invention, the preferable numerical ranges of the support temperature and discharge power for creating the second amorphous layer ( ) include the values in the above-mentioned ranges,
These layer creation factors are not determined independently and separately, but rather the desired properties a-(Si _x
It is desirable that the optimum value of each layer formation factor be determined based on mutual organic relationship so that a second amorphous layer ( ) consisting of C _1-x ) _y X _1-y is formed. The amounts of carbon atoms and halogen atoms contained in the second amorphous layer () in the photoconductive member of the present invention are the same as the conditions for forming the second amorphous layer ().
This is an important factor in the formation of the second amorphous layer (), which provides the desired properties to achieve the objectives of the present invention. The amount of carbon atoms contained in the second amorphous layer () in the present invention is usually 1×10 ^-3 to 90 atomic
%, preferably 1-90 atomic%, optimally 10-90 atomic%
A desirable value is 80 atomic%.
The content of halogen atoms is usually 1
It is desirable that the halogen content be ~20 atomic%, preferably 1 to 18 atomic%, and optimally 2 to 15 atomic%, so that the photoconductive member formed when the halogen content is in this range can be sufficiently applied in practice. It's something you get. The content of hydrogen atoms contained as necessary is usually 19 atomic%, preferably
It is desirable that the content be 13 atomic% or less. That is, if expressed as above a-(Si _x C _1-x ) _y :X _1-y, x is usually 0.1 to 0.99999, preferably 0.1 to 0.99,
It is desirable that y is optimally 0.15 to 0.9, usually 0.6 to 0.99, preferably 0.82 to 0.99, most preferably 085 to 0.98. If both halogen atoms _and hydrogen atoms are included, _the numerical range of _x and _y in this case is a-( Si _x
C _1-x ) _y It is almost the same as the case of X _1-y . The numerical range of the layer thickness of the second amorphous layer ( ) in the present invention is one of the important factors for effectively achieving the object of the present invention. In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose. In addition, the layer thickness of the second amorphous layer ( ) has an organic relationship depending on the characteristics required for each layer region, even in relation to the layer thickness of the first region 103. The following needs to be determined as desired. In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production. The thickness of the second amorphous layer ( ) in the present invention is usually 0.003 to 30 μm, preferably 0.004 to 20 μm, and most preferably 0.005 to 10 μm. The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Al,
Examples include metals such as Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd, and alloys thereof. As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Conductivity can be imparted by providing a thin film made of Pd, In ₂ O ₃ , SnO ₂ , ITO (In ₂ O ₃ +SnO ₂ ), etc., or if it is a synthetic resin film such as polyester film, NiCr, Al , Ag, Pb, Zn, Ni,
A thin film of metal such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, Conductivity is imparted to the surface. The support may have any shape such as a cylinder, a belt, or a plate, and the shape may be determined as desired. For example, the photoconductive member 100 shown in FIG. If it is used as a forming member, it is preferably in the form of an endless belt or a cylinder in the case of continuous high-speed copying. The thickness of the support is determined appropriately so that a desired photoconductive member is formed, but if flexibility is required as a photoconductive member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such cases, the thickness is usually 10μ or more in view of manufacturing and handling of the support, mechanical strength, etc. FIG. 2 shows the layer structure of another preferred embodiment of the photoconductive member of the present invention. The photoconductive member 200 shown in FIG. 2 differs from the photoconductive member 100 shown in FIG.
An upper auxiliary layer 204 is provided between the charge injection prevention layer 203 and the first amorphous layer ( ) 205 exhibiting photoconductivity. That is, the photoconductive member 200 includes a support 201 and a lower auxiliary layer 2 laminated in this order on the support 201.
02, charge injection prevention layer 203, upper auxiliary layer 20
4, comprising a first amorphous layer (205) and a second amorphous layer (206), the second amorphous layer (206) having a free surface 207; The upper auxiliary layer 204 strengthens the adhesion between the charge injection prevention layer 203 and the amorphous layer (205),
The electrical contact at the contact interface between both layers is made uniform, and at the same time, the layer quality of the charge injection prevention layer 203 is made strong by providing it directly on the charge injection prevention layer 203. The lower auxiliary layer 202 and the upper auxiliary layer 204 constituting the photoconductive member 200 shown in FIG.
Auxiliary layer 1 constituting the photoconductive member 100 shown in the figure
Using the same amorphous material as in the case of 02, it is formed under similar layer formation procedures and conditions so as to provide similar properties. Charge injection prevention layer 203 and amorphous layer () 20
5. The amorphous layer () 206 is also the charge injection prevention layer 103, the amorphous layer () 104, and the amorphous layer () 104 shown in FIG.
It has the same characteristics and functions as each of the amorphous layers ( ) 105, and is created using the same layer creation procedure and conditions as in the case of FIG. Next, an example of the method for manufacturing a photoconductive member of the present invention will be explained with reference to the drawings. FIG. 3 shows an example of a photoconductive member manufacturing apparatus. Gas cylinders 302 to 306 in the figure are sealed with gases used to form the respective layers of the present invention.
2 is SiH ₄ gas diluted with He (99.999% purity,
Hereinafter, it will be abbreviated as SiH ₄ /He. ) cylinder, 303 is B ₂ H ₆ gas diluted with He (purity 99.999% or less B ₂ H ₆ /
Abbreviated as He. ), 304 is NH ₃ gas (99.99% purity)
305 is a cylinder of N ₂ gas (purity 99.99%) or C ₂ H ₄ gas (purity 99.99%), and 305 is Ar gas (purity 99.99%).
99.999%) cylinder, 306 diluted with He
SiF ₄ gas (99.999% purity, hereinafter abbreviated as SiF ₄ /He)
It's a cylinder. Reference numerals 342-1 and 342-2 are targets for sputtering, and the type thereof is appropriately selected and used in accordance with the layer to be formed. In order to flow the various gases mentioned above into the reaction chamber 301, the valves 322 to 322 of the gas cylinders 302 to 306 are used.
326, confirm that the leak valve 335 is closed, and confirm that the inflow valves 312 to 316, the outflow valves 317 to 321, and the auxiliary valve 332 are open, and then first close the main valve 33.
4 to exhaust the reaction chamber 301 and gas piping. Next, when the reading on the vacuum gauge 336 reaches approximately 5×10 ^-6 torr, the auxiliary valve 332 and the inflow valve 31
2-316, close the outflow valves 317-321. Thereafter, a desired gas is introduced into the reaction chamber 301 by operating the valve of the gas pipe connected to the cylinder of the gas to be introduced into the reaction chamber 301 as prescribed. Next, an outline of an example of producing a photoconductive member having a structure similar to that shown in FIG. 1 will be described. To form an auxiliary layer on a predetermined support 337 by sputtering, first, the shutter 342 is opened. All gas supply valves are
The reaction chamber 301 is once closed and the main valve 33
4 is fully opened to exhaust the air. A high-purity silicon wafer 342-1 and a high-purity silicon nitride wafer 3 are placed on the electrode 341 to which high-voltage power is applied.
42-2 is set as a target at a desired sputter area ratio. Ar gas from gas cylinder 305 to gas cylinder 3
From 06, SiF ₄ /He gas, N ₂ gas or NH ₃ gas from the gas cylinder 304 were introduced into the reaction chamber 301 by operating the respective predetermined valves as necessary, and the internal pressure of the reaction chamber 301 was adjusted to 0.05 to 1 Torr. Adjust the opening of the main valve 334 so that High voltage power supply 3
40 is turned on and sputtering the silicon wafer 342-1 and the silicon nitride wafer 342-2 at the same time, an auxiliary layer made of an amorphous material made of silicon atoms, halogen atoms, and nitrogen atoms is formed on the support 337. can be formed.
The nitrogen atoms and amount contained in the auxiliary layer are controlled as desired by adjusting the sputter area ratio of the silicon wafer and silicon nitride wafer and the flow rate of the N ₂ gas when introducing the N ₂ gas. I can do it. Also, when creating the target, use silicon powder.
This can also be done by changing the mixing ratio of Si ₃ N ₄ powder. At this time, during layer formation, the support 337 is
It is heated to a desired temperature by a heater 338. When forming the auxiliary layer by the glow discharge method, for example, SiF ₄ /He gas and N ₂ gas or
Introducing NH ₃ gas and, if necessary, SiH ₄ /He gas into the reaction chamber 301 at desired flow rate ratios,
An auxiliary layer of a desired thickness can be formed by generating a glow discharge and continuing the discharge for a desired period of time. The content of nitrogen atoms in the auxiliary layer can be arbitrarily controlled by adjusting the flow rate ratio of the gas used. Next, a charge injection prevention layer is formed on the auxiliary layer. After forming the auxiliary layer, turn on the power supply 340.
Turn off the discharge, stop the discharge, close the valves of the entire system of gas introduction piping of the device, and close the reaction chamber 301.
Gas remaining inside the reaction chamber 301 is discharged to the outside of the reaction chamber 301 to achieve a predetermined degree of vacuum. After that, the shutter 342 is closed, and SiH ₄ /He gas is supplied from the gas cylinder 302 to the gas cylinder 303.
B ₂ H ₆ /He gas is supplied to valves 322 and 32, respectively.
3 respectively, adjust the pressure of the outlet pressure gauges 327, 328 to 1 Kg/cm ² , and open the inlet valves 312, 31.
3 gradually open the mass flow controller 307,
308 respectively. Subsequently, the outflow valves 317 and 318 and the auxiliary valve 332 are gradually opened to allow the respective gases to flow into the reaction chamber 301.
At this time, the outflow valves 317 and 318 are adjusted so that the ratio of the SiH ₄ /He gas flow rate and the B ₂ H ₆ /He gas flow rate becomes the desired value, and the pressure inside the reaction chamber 301 is adjusted to the desired value. Adjust the opening of the main valve 334 while checking the reading on the vacuum gauge 336 so that Then, the temperature of the support body 337 becomes higher than that of the heating heater 3.
After confirming that the temperature is set in the range of 50 to 400°C by step 38, the power supply 340 is turned on and set to the desired power to generate a glow discharge in the reaction chamber 301 and cause the temperature to rise on the support 337. A charge injection prevention layer is formed. In the case of the charge injection prevention layer described above, the amorphous layer exhibiting photoconductivity, which is provided on the charge injection prevention layer, is formed using, for example, SiH ₄ /He gas filled in the cylinder 302. This can be done using the same procedure. In addition to SiH ₄ gas, SiH ₆ gas is particularly effective as the raw material gas used for forming the amorphous layer (2) in order to improve the layer formation rate. When containing halogen atoms in the first amorphous layer (2), the above gas may contain, for example, SiF ₄ /He.
is further added and fed into the reaction chamber 301. To form the second amorphous layer ( ) on the first amorphous layer ( ), for example, the following procedure is performed. First, open the shutter 342. All gas supply valves are once closed, and the reaction chamber 301 is evacuated by fully opening the main valve 334. A target is provided on the electrode 341 to which high-voltage power is applied, in which a high-purity silicon wafer 342-1 and a high-purity graphite wafer 342-2 are placed in advance at a desired area ratio. SiF ₄ /He gas is supplied from the gas cylinder 306 to the reaction chamber 301.
The internal pressure of the reaction chamber 301 is 0.05 to 1 Torr.
Adjust the main valve 334 so that By turning on the high-voltage power supply and sputtering the target, the second amorphous layer () can be formed on the first amorphous layer (). Another method for forming the second amorphous layer () is to use, for example, SiH ₄ gas, SiF ₄ gas, C This is accomplished by diluting each of the ₂ H ₄ gases with a diluent gas such as He as necessary, and flowing the diluted gas into the reaction chamber 301 at a desired flow rate ratio to generate glow discharge according to desired conditions. . Needless to say, all the outflow valves other than those required for forming each layer are closed, and when forming each layer, the gas used to form the previous layer is inside the reaction chamber 301. Outflow valve 3
In order to avoid gas from remaining in the gas piping leading from 17 to 321 into the reaction chamber 301,
17 to 321, open the auxiliary valve 332, and fully open the main valve 334 to temporarily evacuate the system to a high vacuum, as necessary. The amount of carbon atoms contained in the second amorphous layer ( ) can be determined, for example, by changing the flow rate ratio of SiH ₄ gas and C ₂ H ₄ gas introduced into the reaction chamber 301 as desired; Alternatively, when forming a layer by sputtering, the target may be formed by changing the sputter area ratio of the silicon wafer and graphite wafer, or by changing the mixing ratio of silicon powder and graphite powder. can be controlled as desired. Halogen atoms (X) contained in the second amorphous layer ()
The amount of raw material gas for introducing halogen atoms, e.g.
This is accomplished by adjusting the flow rate when SiF ₄ gas is introduced into the reaction chamber 301. Example 1 A layer was formed on an aluminum substrate using the manufacturing apparatus shown in FIG. 3 under the following conditions.

【table】

[Table] The image forming member thus obtained was placed in a charging exposure developing device, corona charging was performed at 5 KV for 0.2 seconds, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the member by cascading a charged developer (including toner and carrier) over the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning process was repeated again. No deterioration of the image was observed even after repeating the test over 150,000 times. Example 2 A layer was formed on an Al substrate under the following conditions using the manufacturing apparatus shown in FIG.

[Table] Other conditions were the same as in Example 1. The image forming member thus obtained was placed in a charging, exposing and developing device, corona charging was performed at 5KV for 0.2 seconds, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the member by cascading a charged developer (including toner and carrier) over the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning steps were repeated again. No deterioration of the image was observed even after repeating the process over 100,000 times. Example 3 Using the apparatus shown in FIG. 3, a layer was formed on an Al substrate under the following conditions.

[Table] Other conditions were the same as in Example 1. The image forming member thus obtained was placed in a charging, exposure and developing device, corona discharge was performed for 0.2 seconds at 5 KV, and a light image was immediately irradiated. A tungsten lamp was used as the light source, and a light intensity of 1.0 lux·sec was irradiated using a transmission type test chart. Immediately thereafter, a charged developer (containing toner and carrier) was cascaded over the surface of the member to obtain a good toner image with extremely high density on the surface of the member. The toner image thus obtained was once cleaned with a rubber blade, and the above image forming and cleaning steps were repeated again. No deterioration of the image was observed even after repeating the test over 150,000 times. Example 4 When forming an amorphous layer (), the flow rate ratio of SiH ₄ gas, SiF ₄ gas, and C ₂ H ₄ gas was changed to form an amorphous layer ().
An image forming member was prepared in exactly the same manner as in Example 1 except that the content ratio of silicon atoms to carbon atoms in the sample was changed. After repeating the image forming, developing and cleaning steps as described in Example 1 about 50,000 times for the image forming member thus obtained, image evaluation was performed and the results shown in Table 4 were obtained.

[Table] ◎〓Very good ○〓Good ×〓Example 5 that causes image defects Image forming members were prepared in exactly the same manner as in Example 1 except for changing the layer thickness of the amorphous layer (). It was created. The steps of image formation, development, and cleaning as described in Example 1 were repeated to obtain the following results.

[Table] Example 6 An image forming member was prepared in the same manner as in Example 1, except that the layer formation method for layers other than the amorphous layer () was changed as shown in the table below. When evaluated, good results were obtained.

[Table] Example 7 An image forming member was prepared in the same manner as in Example 1, except that the method for forming the amorphous layer () was changed as shown in the table below. Upon evaluation, good results were obtained.

[Table] Example 8 Example 3 except that the amorphous layer () was created by sputtering under the following conditions.
An image forming member was prepared in the same manner as in Example 3 and evaluated in the same manner as in Example 3, and good results were obtained.

【table】 [Brief explanation of drawings]

FIG. 1 and FIG. 2 are schematic configuration diagrams showing the configuration of preferred embodiments of the photoconductive member of the present invention, respectively;
FIG. 3 is a schematic explanatory diagram showing an example of an apparatus for manufacturing the photoconductive member of the present invention. 100,200...Photoconductive member, 101,20
1...Support, 102,202,204...Auxiliary layer, 103,203...Charge injection prevention layer, 10
4,205...Amorphous layer (), 105,206
...Amorphous layer (), 106,207...Free surface.

Claims (1)

[Claims] 1 A support for a photoconductive member, a silicon atom as a matrix, 1 to 20 atomic% of halogen atoms as constituent atoms, and 1×10 ^-3 atomic% or more of 30 atomic
charge injection consisting of an auxiliary layer made of an amorphous material containing nitrogen atoms up to a first amorphous layer that exhibits photoconductivity and is composed of an amorphous material having silicon atoms as a matrix and containing at least one of hydrogen atoms or halogen atoms as constituent atoms; 1. A photoconductive member comprising, on a first amorphous material, a second amorphous layer made of an amorphous material containing silicon atoms, carbon atoms, and halogen atoms as constituent atoms.