JPH04102072A - Dielectric characteristics measuring method of film - Google Patents
Dielectric characteristics measuring method of filmInfo
- Publication number
- JPH04102072A JPH04102072A JP22063290A JP22063290A JPH04102072A JP H04102072 A JPH04102072 A JP H04102072A JP 22063290 A JP22063290 A JP 22063290A JP 22063290 A JP22063290 A JP 22063290A JP H04102072 A JPH04102072 A JP H04102072A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- metal vapor
- guard
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 230000001681 protective effect Effects 0.000 claims description 25
- 238000001465 metallisation Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 102
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measurement Of Resistance Or Impedance (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高分子フィルム、特に面積の小さい厚さの薄
いフィルムの誘電特性を正確かつ容易に測定できるフィ
ルムの誘電特性測定方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for measuring the dielectric properties of a polymer film, particularly a film dielectric property measurement method that allows accurate and easy measurement of the dielectric properties of a thin film with a small area.
従来、高分子フィルムの誘電特性は、第1o図および第
11図に示すように、同心円状に設けられた高圧側電極
1とこれに対向する主電極および主電極を囲撓するガー
ド電極3からなる三端子平行平板電極に試料フィルム4
を挟み、絶縁油中でシエーリンダブリソンを用いて測定
している。Conventionally, the dielectric properties of a polymer film have been determined by a high-voltage side electrode 1 provided concentrically, a main electrode facing the high-voltage side electrode 1, and a guard electrode 3 surrounding the main electrode, as shown in FIGS. 1o and 11. Sample film 4 is attached to the three-terminal parallel plate electrode.
Measurements are made using a Schier Linda Brison in insulating oil.
しかし、この方法は第12図に示すように、試料フィル
ム4の曲りや面の粗さにより、電極表面との接触が不完
全となる。また主電極周縁における電界の乱れを押える
ため、主電極2とガード電極3との間隔が試料フィルム
4の厚さより小さくなければならないが、試料フィルム
4が薄くなると、上記間隔を試料フィルム4より薄くす
ることか困難となり、第13図に示すように主電極2と
ガード電極3の間で電界が乱れ、さらに試料フィルム4
の面積を大きくとれない場合には沿面5に電気力線が発
生する等により正確な測定ができなくなる欠点かあった
。However, as shown in FIG. 12, in this method, contact with the electrode surface is incomplete due to the bending and surface roughness of the sample film 4. In addition, in order to suppress the disturbance of the electric field at the periphery of the main electrode, the distance between the main electrode 2 and the guard electrode 3 must be smaller than the thickness of the sample film 4, but if the sample film 4 becomes thinner, the above distance should be made thinner than the sample film 4 As shown in FIG. 13, the electric field is disturbed between the main electrode 2 and the guard electrode 3, and the sample film 4
If the area cannot be made large, electric lines of force may occur on the creeping surface 5, making accurate measurement impossible.
これを解決するものとして、第14図に示すような三端
子平行平板電極がある。すなわち試料フィルム4に高圧
側電極1、主電極2、ガード電極3に相当する電極膜6
,7.8を金属蒸着によって形成し、この試料フィルム
4を、アクリル枠9に速硬性エポキシ樹脂10て挟持接
着して固定し、それぞれの電極膜6,7.8にリード線
10を銀ベースト等て接続するとともにアクリル枠9内
全体を室温で硬化すエポキシ樹脂12でモールドするこ
とにより部分放電の発生を防止し、高電界までのtan
δの測定を可能とした。As a solution to this problem, there is a three-terminal parallel plate electrode as shown in FIG. That is, an electrode film 6 corresponding to the high voltage side electrode 1, the main electrode 2, and the guard electrode 3 is provided on the sample film 4.
, 7.8 are formed by metal vapor deposition, this sample film 4 is fixed to an acrylic frame 9 by sandwiching and adhering it with fast-curing epoxy resin 10, and a lead wire 10 is attached to each electrode film 6, 7.8 using a silver base plate. At the same time, the entire inside of the acrylic frame 9 is molded with epoxy resin 12, which hardens at room temperature, to prevent partial discharges and to maintain tan resistance up to high electric fields.
This made it possible to measure δ.
一般に、三端子性電極系においてガード電極3(電極膜
8)は主電極2(電極膜7)の周縁での電界の乱れを抑
制すると共に主電極2と高圧側電極1(電極膜6)との
間に流れる電流のうち、試料フィルム4表面に流れる表
面電流成分を除き、試料フィルム内部を流れる成分のみ
を測定するものである。主電極2の周縁での電界の乱れ
を抑えるには、ガード電極3と主電極2との間の間隔を
試料フィルム4の厚さより小さくしなければならないが
薄い試料フィルム4を対象とする場合、間隔を小さくし
、かつその間のインピーダンスを測定機器の入力インピ
ーダンスよりも大きくするように電気絶縁を確保するこ
とは困難で、通常2〜3mmの間隔とする場合が多い。In general, in a three-terminal electrode system, the guard electrode 3 (electrode film 8) suppresses the disturbance of the electric field at the periphery of the main electrode 2 (electrode film 7), and also serves to connect the main electrode 2 and the high voltage side electrode 1 (electrode film 6). Of the current flowing during this period, only the component flowing inside the sample film is measured, excluding the surface current component flowing on the surface of the sample film 4. In order to suppress the disturbance of the electric field at the periphery of the main electrode 2, the distance between the guard electrode 3 and the main electrode 2 must be made smaller than the thickness of the sample film 4. However, when a thin sample film 4 is to be used, It is difficult to ensure electrical insulation by reducing the spacing and making the impedance between them larger than the input impedance of the measuring device, and the spacing is usually 2 to 3 mm.
したがってこのような電極系では、主電極2の周縁近傍
で電界の乱れか生じる。このため、エポキシ樹脂12で
モールドした試料フィルム4により、高温領域において
tanδを測定した場合、条件によっては周囲のエポキ
シ樹脂12のtanδか大きな値を示すことがあり、そ
れが試料フィルム4のtanδの測定値に影響をおよぼ
す場合もあることが判明した。Therefore, in such an electrode system, disturbances in the electric field occur near the periphery of the main electrode 2. Therefore, when tan δ is measured in a high-temperature region using the sample film 4 molded with epoxy resin 12, depending on the conditions, the tan δ of the surrounding epoxy resin 12 may show a larger value, which may cause the tan δ of the sample film 4 to be larger. It has been found that there are cases where the measured values are affected.
そこで、第15図に示すように、試料フィルム4と同質
のフィルムを用いたガードフィルム13を主電極2側に
密着させ、その上に金属蒸着することにより、ガード電
極3に相当する金属蒸着膜14が主電極2を覆う構造と
した。この改良された構造により主電極2の周縁での電
気力線の乱れを減少させると共に電気力線がエポキシ樹
脂12中に侵入するのを防止することかできた。Therefore, as shown in FIG. 15, a guard film 13 made of the same material as the sample film 4 is brought into close contact with the main electrode 2 side, and metal is deposited on top of the guard film 13 to form a metal deposited film corresponding to the guard electrode 3. 14 covers the main electrode 2. With this improved structure, it was possible to reduce the disturbance of the lines of electric force at the periphery of the main electrode 2 and to prevent the lines of electric force from penetrating into the epoxy resin 12.
しかしながら、上記改良された構造の電極系において、
試料フィルムに、高圧側電極、主電極、ガード電極とな
る金属蒸着膜を形成するには時間と人手を要し、特にモ
ールドするエポキシ樹脂を硬化させるには、片側にエポ
キシ樹脂を流し込み、硬化後、他の側にエポキシ樹脂を
流しこんで硬化させてモールドが行なわれるか、それぞ
れの面のエポキシ樹脂12の硬化には7日以上かかるた
め、両方で2週間以上要し、極めて能率の悪い作業とな
っている。However, in the electrode system with the above improved structure,
It takes time and manpower to form the metal vapor deposited film that will become the high-voltage side electrode, main electrode, and guard electrode on the sample film.In particular, in order to harden the epoxy resin used for molding, pour the epoxy resin on one side and wait until after it has hardened. , molding is done by pouring epoxy resin on the other side and curing it, or it takes more than 7 days to cure the epoxy resin 12 on each side, so it takes more than 2 weeks for both, which is an extremely inefficient process. It becomes.
本発明者らは、上記の事情に鑑み、能率よく容易に行な
うことができるフィルムの誘電特性測定方法を開発すべ
く、鋭意研究した結果、上記蒸着金属膜が形成された改
良された方法に用いる試料フィルムを、高圧側電極とこ
れに対向する主電極およびガード電極に着脱自在に挟持
すれば、上記測定法の精度を保持し、かつ操作が格段に
容易となると考えた。In view of the above circumstances, the present inventors have conducted extensive research to develop a method for measuring the dielectric properties of films that can be carried out efficiently and easily. It was thought that if the sample film was removably sandwiched between the high-voltage side electrode and the main electrode and guard electrode facing the high-voltage side electrode, the accuracy of the above measurement method would be maintained and the operation would be much easier.
本発明は上記の考えに基づいてなされたもので、試料フ
ィルムを容易に装着して能率よく測定できるフィルムの
誘電特性測定方法を提供することを目的とする。The present invention has been made based on the above idea, and an object of the present invention is to provide a method for measuring the dielectric properties of a film, which allows a sample film to be easily mounted and efficiently measured.
上記の目的を達成するため、本発明のフィルムの誘電特
性測定方法は、
電極系として、高圧側電極と、これに対向して設けられ
た主電極およびこれを囲撓する環状のガード電極とより
なる同心円状三端子平行平板電極を用いるフィルムの誘
電特性測定方法において、一方の面に上記高圧側電極に
対向する高圧金属蒸着膜、他方の面に、上記主電極と対
向する主金属蒸着膜およびガード電極に対向するガード
金属蒸着膜が形成された試料フィルムと、上記試料フィ
ルムと同じ材料によってつくられ、上記主電極が嵌合す
る円形孔を有し、この円形孔の周囲の一方の面には、主
金属蒸着膜の外周部およびガード金属蒸着膜と対向する
環状の保護金属蒸着膜が形成され、この保護金属蒸着膜
が他方の面に形成された接続部に接続されている保護フ
ィルムとを用い、試料フィルムの他方の面と、保護フィ
ルムの他方の面を各金属蒸着膜が同心円状となるように
重ね合わせ、上記保護フィルムの円形孔に主電極を嵌合
した状態で上記高圧電極と、主電極およびガード電極と
の間に挟持して測定する。測定は通常絶縁油中で行なわ
れる。In order to achieve the above object, the method for measuring the dielectric properties of a film according to the present invention includes, as an electrode system, a high voltage side electrode, a main electrode provided opposite to this, and an annular guard electrode surrounding this. A method for measuring the dielectric properties of a film using concentric three-terminal parallel plate electrodes, in which a high-voltage metal vapor-deposited film facing the high-voltage side electrode is formed on one surface, a main metal vapor-deposited film facing the main electrode on the other surface, and A sample film on which a guard metal vapor deposited film is formed facing the guard electrode, and a circular hole made of the same material as the sample film, into which the main electrode fits, and one surface around the circular hole has a is a protective film in which a ring-shaped protective metal vapor deposited film is formed facing the outer periphery of the main metal vapor deposited film and the guard metal vapor deposited film, and this protective metal vapor deposited film is connected to a connection portion formed on the other surface. , overlap the other side of the sample film and the other side of the protective film so that each metal vapor deposited film is concentric, and with the main electrode fitted into the circular hole of the protective film, insert the high voltage electrode , the main electrode, and the guard electrode. Measurements are usually carried out in insulating oil.
本発明の方法は、上記の構成となっているので、試料フ
ィルムおよび保護フィルムに、それぞれ別個に金属蒸着
膜を形成し、これを重ね合わせて圧着、離間自在な高圧
側電極と、主電極およびガード電極との間に挟持させる
ことにより、正確な測定が可能となる。Since the method of the present invention has the above-mentioned configuration, a metal vapor deposition film is formed on the sample film and the protective film separately, and these are overlapped and crimped to form a high-voltage side electrode that can be freely separated, a main electrode and By sandwiching it between the guard electrode and the guard electrode, accurate measurement becomes possible.
第1図ないし第3図は本発明の測定方法に用いられる同
心円状三端子平行平板電極の一実施例を示すもので、図
中符号21.22はそれぞれベークライト製の土台およ
び下台である。これら上下の台21.22にはテフロン
製の2本の支柱23の両側ねじが挿通され、土台足24
、下台¥25が螺合されて枠状に固定されている。1 to 3 show an embodiment of a concentric three-terminal parallel plate electrode used in the measuring method of the present invention, and reference numerals 21 and 22 in the figures represent a base and a lower stand made of Bakelite, respectively. The screws on both sides of the two Teflon columns 23 are inserted into these upper and lower stands 21 and 22, and the base legs 24
, a lower stand ¥25 is screwed together and fixed in a frame shape.
上記上台21の中央には、テフロン製の高圧側電極支え
26か、下端に支え止め27か螺合されて固定されてい
る。この電極支え26には、口。A high voltage side electrode support 26 made of Teflon is screwed into the center of the upper stand 21, and a support stopper 27 is screwed to the lower end thereof. This electrode support 26 has a mouth.
ド28か中心(こ直角に取付けられたステンレス製高圧
側電極29の上記口、ドか挿通されている。The opening of the high-voltage side electrode 29 made of stainless steel, which is mounted perpendicular to the center of the electrode 28, is inserted through the opening of the electrode 29.
上記ロッド28には、高圧側電極29を下方に付勢する
バネ30が取付けられている。また上記電極支え26の
側方にはロッド28の摺動を係止するとめねじ20が設
けられ、口、ド28の上部にはステンレス製の端子リン
グ32か取付けられている。上記高圧側電極29の周縁
は下方内側方向に小さく形成され、下面が高圧側電極2
9の上部分より小さい径の接触部分29aとなっており
、沿面の電気力線の発生を抑制している。A spring 30 is attached to the rod 28 to bias the high voltage side electrode 29 downward. Further, a female thread 20 is provided on the side of the electrode support 26 to lock the sliding movement of the rod 28, and a terminal ring 32 made of stainless steel is attached to the upper part of the opening and door 28. The periphery of the high-voltage side electrode 29 is formed to be smaller in the downward and inward direction, and the lower surface is the same as that of the high-voltage side electrode 29.
The contact portion 29a has a smaller diameter than the upper portion of the contact portion 9, thereby suppressing the generation of electric lines of force along the creeping surface.
また、上記下台22の中央には、テフロン製の主電極支
え33がねじ34によってとめ付けられ、この主電極支
え33には、口、、ド35が中心に直角に取付けられた
ステンレス製主電極36か上記ロッド35を挿通して取
付けられている。上記ロッド35の下端には端子用ねじ
37が設けられている。Further, a main electrode support 33 made of Teflon is fixed to the center of the lower stand 22 with a screw 34, and a main electrode made of stainless steel with a port 35 attached at right angles to the center of the main electrode support 33. 36 is attached by inserting the rod 35 mentioned above. A terminal screw 37 is provided at the lower end of the rod 35.
また、上記主電極支え33を囲撓して、円筒状のテフロ
ン製ガード電極支え38が設けられている。このガード
電極支え38と上記主電極支え33の間には、下部に円
筒状部40を有し、先端か直角方向に開いたステンレス
製のガード電極39の上記円筒状部40が嵌合されると
ともに、直角に開いたガード電極39部分の下面がOリ
ングを介して上記カード電極受え38に支持されている
。Further, a cylindrical Teflon guard electrode support 38 is provided surrounding the main electrode support 33. Fitted between the guard electrode support 38 and the main electrode support 33 is the cylindrical part 40 of a guard electrode 39 made of stainless steel, which has a cylindrical part 40 at the bottom and is open at a right angle at the tip. At the same time, the lower surface of the guard electrode 39 portion opened at right angles is supported by the card electrode holder 38 via an O-ring.
上記円筒状部40にはリード線42か取付けられている
。A lead wire 42 is attached to the cylindrical portion 40 .
また、第4図および第5図は、本発明の測定方法に用い
る試料フィルム51を示すもので、小面積(例えば40
X40mm)のものを対象とする。4 and 5 show a sample film 51 used in the measuring method of the present invention, which has a small area (for example, 40
*40mm).
この試料フィルムの一方の面52には、上記高圧側電極
29と対向する高圧金属蒸着膜53か設けられ、他方の
面54には、上記主電極36、ガード電極39と対向す
る主金属蒸着膜55、およびガード電極39と対向する
ガード金属蒸着膜56が形成されている。One surface 52 of this sample film is provided with a high-pressure metal vapor deposited film 53 facing the high voltage side electrode 29, and the other surface 54 is provided with a main metal vapor deposited film facing the main electrode 36 and guard electrode 39. 55, and a guard metal vapor deposited film 56 facing the guard electrode 39.
また、第6図および第7図は保護フィルム61を示すも
ので、試料フィルム51と同質で試料フィルム51の4
倍程度の面積を有する。この保護フィルム61の中央に
は、主電極36が嵌合する主電極36より僅か大きい孔
62が設けられている。6 and 7 show a protective film 61, which is of the same quality as the sample film 51 and has four parts of the sample film 51.
It has about twice the area. A hole 62 slightly larger than the main electrode 36 into which the main electrode 36 fits is provided in the center of the protective film 61 .
この孔62の周囲の保護フィルム61の一方面63には
、上記主金属蒸着膜55の外周部およびガード金属蒸着
膜56と対向する環状の保護金属蒸着膜64が形成され
ている。この保護金属蒸着膜64は他方の面65の接続
部66と接続されている。上記金属蒸着膜はいずれも金
が用いられている。上記、各電極、各金属蒸着膜の各部
径を下記の記号で示す。On one side 63 of the protective film 61 around the hole 62, an annular protective metal vapor deposited film 64 is formed which faces the outer peripheral portion of the main metal vapor deposited film 55 and the guard metal vapor deposited film 56. This protective metal vapor deposition film 64 is connected to a connecting portion 66 on the other surface 65. Gold is used in all of the above metal vapor deposition films. The diameters of each electrode and each metal vapor deposited film mentioned above are indicated by the following symbols.
ガード電極39の内径:Dgi カード電極39の外径:Dgo 主電極36の直径、Dm 高圧側電極29の接触部分直径 Dh カード金属蒸着膜56の内径:dgi ガード金属蒸着膜56の外径・dg。Inner diameter of guard electrode 39: Dgi Outer diameter of card electrode 39: Dgo Diameter of main electrode 36, Dm Contact portion diameter of high voltage side electrode 29 Dh Inner diameter of card metal vapor deposition film 56: dgi Outer diameter/dg of guard metal vapor deposited film 56.
主金属蒸着膜55の直径、dm 高圧金属蒸着膜53の直径 dh 保護金属蒸着膜64の内径:dpi 保護金属蒸着膜64の外径 clp。Diameter of main metal vapor deposited film 55, dm Diameter of high-pressure metal vapor deposition film 53 dh Inner diameter of protective metal vapor deposited film 64: dpi Outer diameter of the protective metal vapor deposited film 64 clp.
これらの間には次の関係か成立する。The following relationship holds between these.
主電極側 Dm<Dg i<dm<dg i<Dgo<dg。Main electrode side Dm<Dg i<dm<dg i<Dgo<dg.
高圧側 Dh<dp。High pressure side Dh<dp.
保護フィルム
Dm<dp i<dm
上記、同心円状三端子平行平板電極、試料フィルム、お
よび保護フィルムを用いて、試料フィルムの誘電特性を
測定するには、
試料フィルム51の他方の面54と、保護フィルム61
の他方の面65を合わせ、各金属蒸着膜を同心円状に位
置させる。Protective film Dm<dp i<dm To measure the dielectric properties of the sample film using the above concentric three-terminal parallel plate electrode, sample film, and protective film, the other surface 54 of the sample film 51 and the protective film 61
The other surfaces 65 of the metal evaporated films are placed concentrically.
これを、高圧側電極29をスプリング30に抗して持上
げ、第8図に示すように孔62に主電極36を嵌合させ
て、上記高圧側電極29と、主電極36およびガード電
極39の間に挟持し、通常絶縁油中に浸漬される。Lift the high voltage side electrode 29 against the spring 30, fit the main electrode 36 into the hole 62 as shown in FIG. It is sandwiched in between and is usually immersed in insulating oil.
このようにセノテングして測定した場合、第9図に主電
極36周縁部の電気力線を示すように、乱れることなく
高圧側電極29から主電極36に向かって形成されノイ
ズの発生もなく精確な誘電特性値か得られる。When measured in this manner, as shown in Figure 9, the lines of electric force at the peripheral edge of the main electrode 36 are formed from the high-voltage side electrode 29 toward the main electrode 36 without any disturbance, and are accurate without generating noise. dielectric property values can be obtained.
実施例1
厚さ〕○Oum、40mmX 40mmのポリエチレン
、およびポリプロピレンのフィルムを試料フィルムとし
、80mmX 80 mmのそれぞれ同じフィルムを保
護フィルムとして、本発明のフィルムの誘電特性測定方
法により、常温下、周波数50Hzとし、電圧を種々変
えてtanδを測定した。Example 1 Thickness] 40 mm x 40 mm polyethylene and polypropylene films were used as sample films, and the same 80 mm x 80 mm films were used as protective films. The tan δ was measured at 50 Hz and various voltages.
比較例1
第10図、第11図の方法を用い、試料フィルムとして
厚さ100μm、40mmX 40mm、およびφ90
mmのポリエチレンおよびポリプロピレンのフィルムの
を用いて常温下、周波数50)1zとして、電圧を変え
てtanδを測定した。Comparative Example 1 Using the method shown in Figures 10 and 11, a sample film was prepared with a thickness of 100 μm, 40 mm x 40 mm, and a diameter of 90 mm.
The tan δ was measured using polyethylene and polypropylene films of 1.0 mm in diameter at room temperature at a frequency of 50) 1z and varying the voltage.
実施例1、比較例1の結果を一括して第1表にホす。The results of Example 1 and Comparative Example 1 are summarized in Table 1.
第1表 但し表中×はノイズのためンエーリングブリ。Table 1 However, the × in the table is due to noise.
ノの平衡か取れないものを示す。Indicates something that cannot be balanced.
[発明の効果〕
以上説明したように、本発明に係るフィルムの誘電特性
測定方法は、エポキシ樹脂をモールドすることなく、試
料フィルムおよび保護フィルムに別個に金属蒸着膜を形
成し、これらを重ね合わせ、離間、密着自在な高圧側電
極と、主電極およびガード電極との間に挟持させること
により高い電圧を用いて正確に、しかも能率よく測定が
できる利点を有する。[Effects of the Invention] As explained above, the method for measuring dielectric properties of a film according to the present invention involves forming a metal vapor deposition film separately on a sample film and a protective film, and then superimposing them without molding an epoxy resin. By sandwiching the high-voltage electrode between the main electrode and the guard electrode, which can be freely spaced and brought into close contact with each other, it has the advantage that high voltage can be used for accurate and efficient measurement.
第1図は本発明の方法に用いる同心円状三端子平行平板
電極の一実施例を示す縦断面図、第2図は、第1図の■
−■線失視図、第3図は、第1図のI[[−1線失視図
、第4図および第5図は、試料フィルムの平面図で、第
4図は一方面、第5図は他方の面を示す図、第6図およ
び第7図は保護フィルムの平面図で第6図は一方の面、
第7図は他方の面を示す図、第8図は、第1図の同心円
状三端子平行平板電極に、試料フィルムおよび保護フィ
ルムを重ねて挟持せしめた図、第9図は主電極周縁の電
気力線を示す図、第10図および第11は従来の方法の
一例を示すもので第10図は平面図、第11図は第10
図の刈−累線矢視断面図、第12図および第13図は上
記第10図および第11図に示した方法の欠点を示す図
、第14図は、エポキシ樹脂モールドにより、改良され
た従来法の説明図、第15図は、さらに改良された従来
法の説明図である。
1・・高圧側電極、2・・・主電極、3・・・ガード電
極、4・・・試料フィルム、5・・・沿面、6・電極膜
(高圧側電極相当)、7・・・電極膜(主電極相当)、
8電極膜(ガード電極相当)、9・アクリル枠、10・
・速硬性エポキシ樹脂、1トリード線、12・・・室温
で硬化するエポキシ樹脂、13・カードフィルム、14
・・主電極を覆う金属蒸着膜(ガード電極相当)、21
・・上台、22・下台、23・支柱、24 上台足、2
5・下台足、26・・高圧側電極支え、27・・支え止
め、28・・o ノド、29 高圧側電極、29a・・
接触部分、30・・・ノ・不、31止めねじ、32・・
端子リング、33・主電極支え、34・ねじ、35・
口、ド、36・主電極、37端子用ねし、38・ガード
電極支え、39 カート電極、40−・下部筒部、41
・0リング、51・試料フィルム、52一方の面、53
・高圧金属蒸着膜、54・他方の面、55 ・主金属蒸
着膜、56 ガード金属蒸着膜、61・保護フィルム、
62 孔、63・一方の面、64 保護金属蒸着膜、6
5 他方の面、66 接続部。FIG. 1 is a longitudinal sectional view showing an example of a concentric three-terminal parallel plate electrode used in the method of the present invention, and FIG.
The -■ line asymmetrical diagram, FIG. 3 is the I[[-1 line asymmetrical diagram of FIG. Figure 5 shows the other side, Figures 6 and 7 are plan views of the protective film, and Figure 6 shows one side.
Figure 7 is a diagram showing the other side, Figure 8 is a diagram showing the concentric three-terminal parallel plate electrode of Figure 1 with a sample film and a protective film stacked on top of each other, and Figure 9 is a diagram showing the main electrode periphery. Figures 10 and 11, which show electric lines of force, show an example of the conventional method. Figure 10 is a plan view, and Figure 11 is a diagram showing the
Fig. 12 and 13 are views showing the drawbacks of the method shown in Figs. FIG. 15, an explanatory diagram of the conventional method, is an explanatory diagram of a further improved conventional method. 1... High voltage side electrode, 2... Main electrode, 3... Guard electrode, 4... Sample film, 5... Creeping surface, 6... Electrode film (equivalent to high voltage side electrode), 7... Electrode Membrane (equivalent to main electrode),
8 electrode film (equivalent to guard electrode), 9. Acrylic frame, 10.
・Fast-curing epoxy resin, 1 Toread wire, 12... Epoxy resin that hardens at room temperature, 13 ・Card film, 14
・・Metal deposition film covering the main electrode (equivalent to guard electrode), 21
・・Upper stand, 22・Lower stand, 23・Column, 24 Upper stand foot, 2
5. Lower stand foot, 26.. High voltage side electrode support, 27.. Support stop, 28.. o throat, 29. High voltage side electrode, 29a..
Contact part, 30...No/No, 31 Set screw, 32...
Terminal ring, 33・Main electrode support, 34・Screw, 35・
Mouth, C, 36・Main electrode, 37 Terminal screw, 38・Guard electrode support, 39 Cart electrode, 40−・Lower cylinder part, 41
・0 ring, 51 ・Sample film, 52 One side, 53
- High pressure metal vapor deposition film, 54 - Other surface, 55 - Main metal vapor deposition film, 56 Guard metal vapor deposition film, 61 - Protective film,
62 Hole, 63・One side, 64 Protective metal vapor deposited film, 6
5 Other side, 66 Connection.
Claims (2)
けられた主電極およびこれを囲撓する環状のガード電極
とよりなる同心円状三端子平行平板電極を用いるフィル
ムの誘電特性測定方法において、 一方の面に上記高圧側電極に対向する高圧金属蒸着膜、
他方の面に、上記主電極と対向する主金属蒸着膜および
ガード電極に対向するガード金属蒸着膜が形成された試
料フィルムと、上記試料フィルムと同じ材料によってつ
くられ、上記主電極が嵌合する円形孔を有し、この円形
孔の周囲の一方の面には、主金属蒸着膜の外周部および
ガード金属蒸着膜と対向する環状の保護金属蒸着膜が形
成され、この保護金属蒸着膜が他方の面に形成された接
続部と接続されている保護フィルムとを用い、試料フィ
ルムの他方の面と、保護フィルムの他方の面を各金属蒸
着膜が同心円状となるように重ね合わせ、上記保護フィ
ルムの円形孔に主電極を嵌合した状態で上記高圧電極と
、主電極およびガード電極との間に挟持することを特徴
とするフィルムの誘電特性測定方法。(1) A method for measuring dielectric properties of a film using a concentric three-terminal parallel plate electrode consisting of a high-voltage side electrode, a main electrode provided opposite to the high-voltage side electrode, and an annular guard electrode surrounding the high-voltage side electrode. , a high-pressure metal vapor-deposited film facing the high-voltage side electrode on one side;
A sample film is formed of the same material as the sample film, and has a main metal vapor deposited film facing the main electrode and a guard metal vapor deposit film opposing the guard electrode formed on the other surface, and the main electrode is fitted into the sample film. It has a circular hole, and on one side around the circular hole, a ring-shaped protective metal vapor deposited film is formed that faces the outer periphery of the main metal vapor deposited film and the guard metal vapor deposited film. Using the connecting portion formed on the surface and the connected protective film, overlap the other surface of the sample film and the other surface of the protective film so that each metal vapor deposited film is concentric, and then 1. A method for measuring dielectric properties of a film, which comprises sandwiching the main electrode between the high-voltage electrode and a main electrode and a guard electrode in a state where the main electrode is fitted into a circular hole in the film.
ルムの誘電特性測定方法。(2) The method for measuring dielectric properties of a film according to claim (1), wherein the measurement is carried out in insulating oil.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22063290A JPH04102072A (en) | 1990-08-22 | 1990-08-22 | Dielectric characteristics measuring method of film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22063290A JPH04102072A (en) | 1990-08-22 | 1990-08-22 | Dielectric characteristics measuring method of film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04102072A true JPH04102072A (en) | 1992-04-03 |
Family
ID=16754016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22063290A Pending JPH04102072A (en) | 1990-08-22 | 1990-08-22 | Dielectric characteristics measuring method of film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04102072A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018205064A (en) * | 2017-06-01 | 2018-12-27 | 住ベリサーチ株式会社 | Dielectric characteristics measuring jig, dielectric characteristics measuring device, and dielectric characteristics measuring method |
JP2018205065A (en) * | 2017-06-01 | 2018-12-27 | 住ベリサーチ株式会社 | Dielectric characteristics measuring jig, dielectric characteristics measuring device, and dielectric characteristics measuring method |
JP2019100703A (en) * | 2017-11-28 | 2019-06-24 | 株式会社雄島試作研究所 | Resonator cavity structure |
-
1990
- 1990-08-22 JP JP22063290A patent/JPH04102072A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018205064A (en) * | 2017-06-01 | 2018-12-27 | 住ベリサーチ株式会社 | Dielectric characteristics measuring jig, dielectric characteristics measuring device, and dielectric characteristics measuring method |
JP2018205065A (en) * | 2017-06-01 | 2018-12-27 | 住ベリサーチ株式会社 | Dielectric characteristics measuring jig, dielectric characteristics measuring device, and dielectric characteristics measuring method |
JP2019100703A (en) * | 2017-11-28 | 2019-06-24 | 株式会社雄島試作研究所 | Resonator cavity structure |
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