JPH0397666A - 還元再酸化型半導体コンデンサ用磁器組成物 - Google Patents
還元再酸化型半導体コンデンサ用磁器組成物Info
- Publication number
- JPH0397666A JPH0397666A JP1233125A JP23312589A JPH0397666A JP H0397666 A JPH0397666 A JP H0397666A JP 1233125 A JP1233125 A JP 1233125A JP 23312589 A JP23312589 A JP 23312589A JP H0397666 A JPH0397666 A JP H0397666A
- Authority
- JP
- Japan
- Prior art keywords
- reduction
- semiconductor capacitor
- type semiconductor
- compsn
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000010405 reoxidation reaction Methods 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 title claims description 13
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 7
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 16
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 3
- 229910021523 barium zirconate Inorganic materials 0.000 abstract description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 3
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000011656 manganese carbonate Substances 0.000 abstract 2
- 235000006748 manganese carbonate Nutrition 0.000 abstract 2
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910021541 Vanadium(III) oxide Inorganic materials 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 101100366935 Caenorhabditis elegans sto-2 gene Proteins 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1233125A JPH0397666A (ja) | 1989-09-09 | 1989-09-09 | 還元再酸化型半導体コンデンサ用磁器組成物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1233125A JPH0397666A (ja) | 1989-09-09 | 1989-09-09 | 還元再酸化型半導体コンデンサ用磁器組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0397666A true JPH0397666A (ja) | 1991-04-23 |
JPH0547508B2 JPH0547508B2 (enrdf_load_html_response) | 1993-07-16 |
Family
ID=16950146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1233125A Granted JPH0397666A (ja) | 1989-09-09 | 1989-09-09 | 還元再酸化型半導体コンデンサ用磁器組成物 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0397666A (enrdf_load_html_response) |
-
1989
- 1989-09-09 JP JP1233125A patent/JPH0397666A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0547508B2 (enrdf_load_html_response) | 1993-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0397666A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH0397665A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH0397663A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH0397664A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPS6046811B2 (ja) | 半導体磁器コンデンサ用組成物 | |
JPH03215354A (ja) | チタン酸バリウム系半導体磁器組成物 | |
JPH04169003A (ja) | 非還元性誘電体磁器組成物 | |
JPH06102573B2 (ja) | 還元再酸化型半導体セラミックコンデンサ用組成物 | |
JPH05198405A (ja) | チタン酸バリウム系半導体磁器組成物 | |
JPH01236608A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH02106810A (ja) | 高誘電率磁器組成物 | |
JPH03274606A (ja) | 誘電体磁器組成物 | |
JPS6120504B2 (enrdf_load_html_response) | ||
JPS6258128B2 (enrdf_load_html_response) | ||
JPH04206208A (ja) | 非還元性誘電体磁器組成物 | |
JPH01236607A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH01239704A (ja) | 高誘電率磁器組成物 | |
JPS5957415A (ja) | 還元再酸化型半導体磁器コンデンサ用組成物 | |
JPS63211510A (ja) | 半導体磁器組成物 | |
JPS6345704A (ja) | 半導体磁器組成物 | |
JPS6235256B2 (enrdf_load_html_response) | ||
JPH03203118A (ja) | 誘電体磁器組成物 | |
JPS6115529B2 (enrdf_load_html_response) | ||
JPH01236609A (ja) | 還元再酸化型半導体コンデンサ用磁器組成物 | |
JPH0653011A (ja) | 負の抵抗温度特性を有するチタン酸バリウム系半導体磁器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |