JPH0397274A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPH0397274A JPH0397274A JP1235187A JP23518789A JPH0397274A JP H0397274 A JPH0397274 A JP H0397274A JP 1235187 A JP1235187 A JP 1235187A JP 23518789 A JP23518789 A JP 23518789A JP H0397274 A JPH0397274 A JP H0397274A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temperature
- substrate
- thin film
- deposited layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000077 silane Inorganic materials 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 11
- 239000004332 silver Substances 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000010304 firing Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract description 2
- 230000001143 conditioned effect Effects 0.000 abstract 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く産業上の利用分野〉
この発明は、太陽ＩＩ／Ｉ１！の製造方法に関し、より
詳しくは、受光面側に基板と反対の導電型を示すシリコ
ン薄膜堆積層を持つ太陽電池の受光面電極と反射防止膜
の形成に特徴を有する太陽電池の製造方法に関するもの
である。[Detailed Description of the Invention] Industrial Application Fields This invention is directed to Taiyo II/I1! More specifically, it relates to a method for manufacturing a solar cell characterized by the formation of a light-receiving surface electrode and an anti-reflection film on the light-receiving surface side of the solar cell, which has a silicon thin film deposited layer exhibiting a conductivity type opposite to that of the substrate. It is.
〈従来の技術〉
従来のシリコン太陽電池のＰ−Ｎ接合形成は、例えば基
板の導電型がＰ型の場合には、ＰＯＣＱ３を不純物源と
する熱拡散法によって行われている。<Prior Art> Formation of a P-N junction in a conventional silicon solar cell is performed by a thermal diffusion method using POCQ3 as an impurity source, for example, when the conductivity type of the substrate is P type.
この熱拡散法は、９００℃程度の高温を必要とするため
、基板の半導体的特性、例えばライフタイムの値が低下
し、太陽電池の特性が損なわれる。Since this thermal diffusion method requires a high temperature of about 900° C., the semiconductor properties of the substrate, such as the lifetime value, decrease, and the properties of the solar cell are impaired.
この点を解決する目的で、ＣＶＤ（化学的気相成長）法
等により、基板と反対の導電型を示すシリコン薄膜堆積
層を基板上に堆積してＰＮ接合を形成する方法や、この
薄膜堆積層内で発生した少数キャリアの収集効率をより
高めるため、シリコン基板上に、先ず、基板と同じ導電
型の低不純物濃度のシリコン薄膜堆積層を形成した後、
その上に導電型の異なる高不純物濃度の薄膜堆積層を形
成する方法が提案されている。In order to solve this problem, a method has been proposed in which a PN junction is formed by depositing a silicon thin film deposited layer having a conductivity type opposite to that of the substrate using CVD (chemical vapor deposition), etc. In order to further improve the collection efficiency of minority carriers generated within the layer, a silicon thin film deposited layer with a low impurity concentration of the same conductivity type as the substrate is first formed on the silicon substrate, and then
A method has been proposed in which a thin film deposited layer having a different conductivity type and having a high impurity concentration is formed thereon.
これらの方法によると、基板温度４００〜６００°Ｃ程
度の低温でのＰ−Ｎ接合形成が可能となるため、基板自
体のライフタイムを損なうことがない」二、薄膜堆積層
内の不純物分布の制御が容易となり、従来の熱拡散法で
は困難であった不純物分布の最適化や、太陽電池の特性
に大きな影響を持つ表面不純物濃度の最適化が容易とな
るため、太陽電池特性の大幅な改善が期待できる。According to these methods, it is possible to form a P-N junction at a low substrate temperature of about 400 to 600°C, so the lifetime of the substrate itself is not impaired.''2. This makes it easier to control, optimizing impurity distribution, which was difficult with conventional thermal diffusion methods, and optimizing surface impurity concentration, which has a large effect on solar cell characteristics, resulting in significant improvements in solar cell characteristics. can be expected.
しかし、これらの太陽電池では、少なくともシリコン薄
膜堆積層の堆積温度以下で後続の工程、例えば受光面電
極、反射防止膜形戚を行わないと、シリコン薄膜堆積層
の特性が変化し、太陽電池の特性の低下、安定性が問題
となる。そこで、受光面電極及び反射防止膜の形成方法
の一つとして蒸着法が用いられているが、この方法は処
理能力も小さく、材料コストも高くなるという欠点があ
る。However, in these solar cells, if subsequent steps such as light-receiving surface electrodes and anti-reflection coatings are not performed at least below the deposition temperature of the silicon thin film deposited layer, the characteristics of the silicon thin film deposited layer will change and the solar cell will deteriorate. Problems include deterioration of characteristics and stability. Therefore, a vapor deposition method is used as one of the methods for forming the light-receiving surface electrode and the antireflection film, but this method has the drawbacks of low processing capacity and high material cost.
く発明か解決しようとする課題〉
上記の処理能力が小さく、材料コストが高くなるという
欠点を解決するため、本発明者は印刷法による銀ペース
トの焼成電極を適用する方法を試みた。銀ペーストの焼
成温度をシリコン薄膜堆積層の生成温度以上に上げると
、シリコン薄膜堆積層の特性が劣化し、さらに焼成温度
を上げると、リーク電流が増大ずる。逆に、銀ペースト
電極の焼成温度をシリコン薄膜堆積層の生成温度よりも
下げると、曲線因子が低下し、高効率の太陽電池を得る
ことが困難であった。Problems to be Solved by the Invention> In order to solve the above-mentioned drawbacks of low processing capacity and high material cost, the present inventor tried a method of applying a fired electrode of silver paste using a printing method. If the firing temperature of the silver paste is raised above the formation temperature of the silicon thin film deposited layer, the characteristics of the silicon thin film deposited layer will deteriorate, and if the firing temperature is further raised, the leakage current will increase. Conversely, when the firing temperature of the silver paste electrode is lower than the formation temperature of the silicon thin film deposited layer, the fill factor decreases, making it difficult to obtain a highly efficient solar cell.
そこで、この発明の目的は、銀ペースト電極を印刷焼成
法によって形成することによって、簡単かつ安価に製造
できる上に、上記銀ペースト電極の焼成温度をシリコン
薄膜堆積層の生成温度よりも低下させて、シリコン薄膜
堆積層の特性の劣化を防止しても、曲線因子の低下しな
い太陽電池の製造方法を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to form a silver paste electrode by a printing and firing method so that it can be easily and inexpensively manufactured, and the firing temperature of the silver paste electrode is lower than the temperature at which a silicon thin film deposited layer is formed. Another object of the present invention is to provide a method for manufacturing a solar cell in which the fill factor does not decrease even if the deterioration of the characteristics of the silicon thin film deposited layer is prevented.
〈課題を解決するための手段〉
上記目的を達成するため、この発明の太陽電池の製造方
法は、シリコン基板を準備する工程と、上記シリコン基
板と異なる導電型のシリコン薄膜堆積層を上記シリコン
基板上に所定の温度で形威する工程と、上記シリコン薄
膜堆積層上に導電性銀ペースト電極を上記所定の温度以
下の温度の印刷焼成法で形成する工程と、上記シリコン
薄膜堆積層上にシラン（ＳｉＨ＊），アンモニア（ＮＨ
３），水素（Ｈｚ）、またはシラン（ＳｉＨ．），アン
モニア（ＮＨ３）．窒素（Ｎ，）を原料ガスとして、シ
リコン窒化膜からなる反射防止膜をＲＦ’プラズマ放電
法で形成する工程を含むことを特徴としている。<Means for Solving the Problems> In order to achieve the above object, the method for manufacturing a solar cell of the present invention includes a step of preparing a silicon substrate, and applying a silicon thin film deposited layer of a conductivity type different from that of the silicon substrate to the silicon substrate. a step of forming a conductive silver paste electrode on the silicon thin film deposited layer at a predetermined temperature, a step of forming a conductive silver paste electrode on the silicon thin film deposited layer by a printing and baking method at a temperature below the predetermined temperature, and a step of forming a silane paste electrode on the silicon thin film deposited layer. (SiH*), ammonia (NH
3), hydrogen (Hz), or silane (SiH.), ammonia (NH3). The method is characterized in that it includes a step of forming an antireflection film made of a silicon nitride film by an RF' plasma discharge method using nitrogen (N,) as a raw material gas.
く作用〉
上記方法によると、銀ペースト電極は、シリコン薄膜堆
積層を形成する際の温度以下の温度で焼成される。した
がって、上記シリコン薄膜堆積層の特性が熱により悪化
することがない。しかも銀ペースト電極をこのように低
温で焼成しても、上記シリコン薄膜堆積層上にシリコン
窒化膜をＳｉＨ ４， Ｎ Ｈ ３， Ｈ ｘ、または
Ｓ ｉ Ｈ ４ ， Ｎ Ｈ ｓ ， Ｎ ＊を原料ガ
スとしてＲＦ’（高周波）プラズマ放電法で形成するの
で、第２図に示すように、曲線因子の低下が防止され、
したがって、変換効率の高い太陽電池が得られる。Effects> According to the above method, the silver paste electrode is fired at a temperature lower than the temperature at which the silicon thin film deposited layer is formed. Therefore, the characteristics of the silicon thin film deposited layer are not deteriorated by heat. Moreover, even if the silver paste electrode is fired at such a low temperature, the silicon nitride film cannot be formed on the silicon thin film deposited layer using SiH 4 , NH 3 , H x or Si H 4 , NH s , N * as the raw material. Since it is formed as a gas using the RF' (radio frequency) plasma discharge method, as shown in Figure 2, a decrease in fill factor is prevented,
Therefore, a solar cell with high conversion efficiency can be obtained.
く実施例〉 以下、この発明の一実施例を図で説明する。Example Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第ｌ図Ａ−Ｅは、この発明の一実施例の工程を断面図で
示したものである。FIGS. 1A to 1E are cross-sectional views showing the steps of an embodiment of the present invention.
第ｌ図Ａに示すＰ型でｌΩ・ｃｍの比抵抗値を有するｌ
００ＩＩＩＩＩ１０のシリコン多結晶基板ｌを準備する
。続いて、第ｌ図Ｂに示すように、裏面にＡＩ２ペース
トの焼成により、背面電極２と高濃度Ｐ＋層３を形成し
た。次に、第１図Ｃに示すように、基板ｌとは反対の導
電型を示すＮ＋シリコン薄膜堆積層４をＲＰプラズマＣ
ＶＤ法で形成した。このシリコン薄膜堆積層４の形成条
件は、基板温度５００℃、原料ガスとし’Ｔ− Ｐ Ｈ
３ ， Ｓ ｊ Ｈ ４， Ｈ ｔを用い、ＲＦパヮ
ーを５０Ｗとした。次に、第ｌ図Ｄに示すように、低温
焼成用銀ペースト材料を用いて、４５０℃の温度で焼威
し、受光面電極５を形成した。最後に、第ｌ図Ｅに示す
ように、ＲＦプラズマＣＶＤ法によりシリコン窒化膜６
を形成した。膜形成条件は、Ｓ ｉ Ｈ ａ ， Ｎ
Ｈ ｓ ． Ｈ ｔ （又はＮ２）を用い、基板温度３
５０℃、圧力０．７Ｔｏｒｒで３分間ＲＰ放電を行った
。A P type shown in Figure A with a specific resistance value of 1 Ω cm.
A silicon polycrystalline substrate l of 00III10 is prepared. Subsequently, as shown in FIG. 1B, a back electrode 2 and a high concentration P+ layer 3 were formed on the back surface by baking an AI2 paste. Next, as shown in FIG.
It was formed by the VD method. The conditions for forming this silicon thin film deposition layer 4 are as follows: substrate temperature is 500°C, source gas is 'T-PH
3, S j H 4, H t was used, and the RF power was set to 50 W. Next, as shown in FIG. 1D, the light-receiving surface electrode 5 was formed by baking at a temperature of 450° C. using a silver paste material for low-temperature baking. Finally, as shown in FIG.
was formed. The film formation conditions were S i H a , N
Hs. Using H t (or N2), substrate temperature 3
RP discharge was performed for 3 minutes at 50°C and a pressure of 0.7 Torr.
第２図中の曲線Ａは、上述のようにして作製された太陽
電池の電圧一電流特性を表わすものである。曲線Ｂで示
す特性は、比較のため、第１図Ｄの太陽電池に対して蒸
着法によってＴｉｅ，膜を反射防止膜として形成した場
合のものである。第２図から明らかなように、曲線Ａで
示される本発明の素子の曲線因子は０．７５であり、曲
線Ｂで示される素子の０．５１と比較して大幅に改善さ
れている。また、短絡電流密度についても１．６ｍＡ／
ｃｘ’の向上があった。この結果、曲線Ｂで示される素
子の変換効率９．７％に対し、曲線Ａで示される本発明
の素子では、変換効率ｌ４．９％の値が得られた。Curve A in FIG. 2 represents the voltage-current characteristics of the solar cell produced as described above. For comparison, the characteristics shown by curve B are obtained when a tie film is formed as an antireflection film by vapor deposition on the solar cell shown in FIG. 1D. As is clear from FIG. 2, the fill factor of the device of the invention shown by curve A is 0.75, which is a significant improvement compared to 0.51 of the device shown by curve B. In addition, the short circuit current density is also 1.6mA/
There was an improvement in cx'. As a result, while the conversion efficiency of the device shown by curve B was 9.7%, the conversion efficiency of the device of the present invention shown by curve A was 14.9%.
〈発明の効果〉
この発明によれば、低コストの簡単なプロセスで曲線因
子の改善が図れ、変換効率の高い太陽電池を得ることが
できる。<Effects of the Invention> According to the present invention, the fill factor can be improved through a simple process at low cost, and a solar cell with high conversion efficiency can be obtained.
さらに、他の効果として次のことが挙げられる。Furthermore, other effects include the following.
ａ．大面積太陽電池に対しても十分な処理能力がある。a. It has sufficient processing capacity even for large-area solar cells.
ｂ．プロセスの低温化が可能となり、省エネルギー化が
図れる。b. It is possible to lower the process temperature and save energy.
Ｃ．受光面電極をシリコン窒化膜で被覆するため、バッ
シベーション効果により、信頼性の高い太陽電池が得ら
れる。C. Since the light-receiving surface electrode is covered with a silicon nitride film, a highly reliable solar cell can be obtained due to the passivation effect.
第Ｉ図はこの発明の一実施例の各工程を示す工程図、第
２図はこの発明と従来法で作製した太陽電池の特性比較
図である。
ｌ・・・Ｐ型多結晶基板、２・・・背面電極、３・・・
Ｐ４高濃度層、４・・・シリコン薄膜堆積層、５・・・
受光面電極、６・・・シリコン窒化膜。
特 許 出 願 人 シャープ株式会社代 理 人
弁理士 青山 葆 はかｌ名ぐ
■
０
Ｏ
ーFIG. I is a process diagram showing each step of an embodiment of the present invention, and FIG. 2 is a comparison diagram of characteristics of solar cells produced by the present invention and a conventional method. l...P-type polycrystalline substrate, 2...back electrode, 3...
P4 high concentration layer, 4... silicon thin film deposition layer, 5...
Light-receiving surface electrode, 6... silicon nitride film. Patent applicant: Sharp Corporation Agent
Patent Attorney Aoyama Aoyama Name ■ 0 O -
Claims (1)
を上記シリコン基板上に所定の温度で形成する工程と、 上記シリコン薄膜堆積層上に導電性銀ペースト電極を上
記所定の温度以下の温度の印刷焼成法で形成する工程と
、 上記シリコン薄膜堆積層上にシラン（ＳｉＨ＿４）、ア
ンモニア（ＮＨ＿３）、水素（Ｈ＿２）、またはシラン
（ＳｉＨ＿４）、アンモニア（ＮＨ＿３）、窒素（Ｎ＿
２）を原料ガスとして、シリコン窒化膜からなる反射防
止膜をＲＦプラズマ放電法で形成する工程を含むことを
特徴とする太陽電池の製造方法。(1) A step of preparing a silicon substrate, a step of forming a silicon thin film deposited layer of a conductivity type different from that of the silicon substrate on the silicon substrate at a predetermined temperature, and a conductive silver paste electrode on the silicon thin film deposited layer. silane (SiH_4), ammonia (NH_3), hydrogen (H_2), or silane (SiH_4), ammonia (NH_3) on the silicon thin film deposited layer by a printing and baking method at a temperature below the predetermined temperature. , nitrogen (N_
A method for manufacturing a solar cell, comprising the step of forming an antireflection film made of a silicon nitride film by an RF plasma discharge method using 2) as a raw material gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1235187A JPH0397274A (en) | 1989-09-11 | 1989-09-11 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1235187A JPH0397274A (en) | 1989-09-11 | 1989-09-11 | Manufacture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0397274A true JPH0397274A (en) | 1991-04-23 |
Family
ID=16982363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1235187A Pending JPH0397274A (en) | 1989-09-11 | 1989-09-11 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0397274A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397400A (en) * | 1992-07-22 | 1995-03-14 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar cell |
| CN109243969A (en) * | 2018-08-31 | 2019-01-18 | 常州亿晶光电科技有限公司 | Tubular type PECVD silicon nitride gradual change membrane process |
-
1989
- 1989-09-11 JP JP1235187A patent/JPH0397274A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397400A (en) * | 1992-07-22 | 1995-03-14 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar cell |
| US5472885A (en) * | 1992-07-22 | 1995-12-05 | Mitsubishi Denki Kabushiki Kaisha | Method of producing solar cell |
| US5963790A (en) * | 1992-07-22 | 1999-10-05 | Mitsubshiki Denki Kabushiki Kaisha | Method of producing thin film solar cell |
| CN109243969A (en) * | 2018-08-31 | 2019-01-18 | 常州亿晶光电科技有限公司 | Tubular type PECVD silicon nitride gradual change membrane process |
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