JPH0397228A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0397228A JPH0397228A JP23281789A JP23281789A JPH0397228A JP H0397228 A JPH0397228 A JP H0397228A JP 23281789 A JP23281789 A JP 23281789A JP 23281789 A JP23281789 A JP 23281789A JP H0397228 A JPH0397228 A JP H0397228A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- semiconductor device
- manufacturing
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000011737 fluorine Substances 0.000 claims abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims abstract description 5
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims abstract description 3
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical group C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- -1 and as a result Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＬＳＩ製造工程において素子分離等に応用され
るボーラス状シリコンの形成方法及び装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for forming a bolus of silicon, which is applied to element isolation and the like in an LSI manufacturing process.
従来、ポーラス状シリコンの形成方法及び装置について
は、ジャパニーズ・ジャーナル・オブ・アプライド・フ
ィジクス１５ （１９７６年）第１６５５頁から１６６
４頁（Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，Ｉｓ （１
９７６）ＰＰ１６５５−１６６４）において論じられて
いる。ここで述べられているようにボーラス状シリコン
はフッ化水素（ＨＦ）水溶液中での陽極反応によって形
威される．また、ポーラス状シリコンは容易に酸化され
るので、例えばＬＳＩ製造プロセスにおける素子分離技
術やＳ Ｏ Ｉ （Ｓｉｌｉｃｏｎ ｏｎ Ｉｎｓｕｌ
ａｔｏｒ）構造の形成に適用される。Conventionally, methods and apparatus for forming porous silicon are described in Japanese Journal of Applied Physics 15 (1976), pp. 1655 to 166.
4 pages (Jpn. J. Appl. Phys., Is (1
976) PP 1655-1664). As described here, bolus silicon is formed by an anodic reaction in an aqueous hydrogen fluoride (HF) solution. In addition, since porous silicon is easily oxidized, it is difficult to use, for example, element isolation technology in the LSI manufacturing process or SOI (Silicon on Insulator).
ator) structure.
上記従来技術はフッ化水素水溶液中での陽極反応を用い
る為，水溶液中に存在する有機物について配慮がされて
おらず，ポーラス状シリコンの汚染の問題があった。フ
ッ化水素水溶液中でのシリコン基板の汚染については例
えばＡ．Ｌｉｃｃｉａｒｄｅｌｌｏらがアプライド・フ
イジクス・レター４ ８ （１９８６年）第４１頁から
第４３頁（Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ． ，４８（
１９８６）ＰＰ４１−４３）で述べている。彼らはフン
化水素水溶液中の汚染物はフッ化水素水溶液を入れる容
器からの有機物と予想している。Since the above-mentioned conventional technology uses an anodic reaction in an aqueous hydrogen fluoride solution, no consideration is given to organic substances present in the aqueous solution, resulting in the problem of contamination of porous silicon. Regarding contamination of silicon substrates in a hydrogen fluoride aqueous solution, see, for example, A. Licciardello et al. Applied Physics Letters 48 (1986) pp. 41-43 (Appl. Phys. Lett., 48 (
1986) PP41-43). They predicted that the contaminants in the hydrogen fluoride solution were organic matter from the container containing the hydrogen fluoride solution.
実際、陽極酸化法でポーラス状シリコンを形成する場合
、反応容器（化或槽）は四フッ化エチレンーバーフロロ
アルキルビニルエーテル共重合樹脂（ＰＦＡ）製である
ため濃フッ酸に対して劣化する。具体的には２３℃の６
０％濃フッ酸に１６８時間、ＰＦＡを浸すと引張り強度
と伸びの残留特性は９９％になる。すなわち、ＰＦＡは
濃フッ酸と反応し、その結果、フッ化水素水溶液中に有
機物が混入することになる。In fact, when porous silicon is formed by anodizing, the reaction vessel (chemical tank) is made of tetrafluoroethylene-barfluoroalkyl vinyl ether copolymer resin (PFA) and is degraded by concentrated hydrofluoric acid. Specifically, 6 at 23℃
When PFA is immersed in 0% concentrated hydrofluoric acid for 168 hours, the residual properties of tensile strength and elongation become 99%. That is, PFA reacts with concentrated hydrofluoric acid, and as a result, organic matter is mixed into the hydrogen fluoride aqueous solution.
本研究の目的は有機物による汚染のないポーラス状シリ
コンを形成することにある．
〔課題を解決するための手段〕
上記目的を達成するために、シリコン基板を設置した反
応容器内に高純度のフッ素元素あるいは他のハロゲン元
素を含むガスを導入した。The purpose of this research is to form porous silicon that is free from organic contamination. [Means for Solving the Problems] In order to achieve the above object, a gas containing highly purified fluorine element or other halogen element was introduced into a reaction vessel in which a silicon substrate was installed.
フッ素元素あるいは他のハロゲン元素を含むガスは精製
器で容易に高純度化できる。それらの高純度ガスを反応
容器内へ導入し、反応容器内に設置したシリコン基板と
反応させることにより、有機物の汚染なしにボーラス状
シリコンを形成できる。Gases containing elemental fluorine or other halogen elements can be easily purified to a high degree using a purifier. By introducing these high-purity gases into a reaction container and causing them to react with a silicon substrate placed in the reaction container, a bolus of silicon can be formed without contamination with organic matter.
以下、本発明の一実施例を第工図により説明する。石英
製反応容器１１中のシリコン基仮ｌ２（６インチ径，ボ
ロン（Ｂ） ドープ，比抵抗２０Ω・０，面方位（１０
０），オフアングル４゜）は炭化シリコン（ｓｉｃ）被
覆された炭素サセプタ１３上に設置した。シリコン基仮
１２は炭素サセプタ１３と伴にモーターｌ４によって回
転する。An embodiment of the present invention will be described below with reference to the drawings. Silicon base 12 (6 inch diameter, boron (B) doped, resistivity 20Ω・0, surface orientation (10
0), off-angle 4°) was placed on a silicon carbide (SIC) coated carbon susceptor 13. The silicon base material 12 is rotated together with the carbon susceptor 13 by a motor 14.
またシリコン基板１２は赤外線加熱Ｗｌ５によって８０
０℃に加熱される．使用したガスはＮＦｓガス（三フッ
化窒素ガス）１６（純度９９．９９９９％，流量４７ｃ
ｃ／分）と水素ガス１７（純度９９．９９９９％，流量
１ｃｃ／分）である。流量は流量制御器１８．１９によ
り各々制御される。ガスはガス供給管２０を通じて石英
製反応容器１１へ導入される。Further, the silicon substrate 12 is heated to 80° by infrared heating Wl5.
It is heated to 0℃. The gas used was NFs gas (nitrogen trifluoride gas) 16 (purity 99.9999%, flow rate 47c).
c/min) and hydrogen gas 17 (purity 99.9999%, flow rate 1 cc/min). The flow rates are each controlled by flow controllers 18,19. Gas is introduced into the quartz reaction vessel 11 through the gas supply pipe 20.
反応容器内のガスはロータリボンプ２１で排気される。The gas in the reaction vessel is exhausted by the rotary pump 21.
反応容器内の圧力は１ ． Ｉ Ｔｏｒｒである。The pressure inside the reaction vessel is 1. I Torr.
第２図は処理時間（ガスを流した時間）と形成したボー
ラス状シリコン膜の膜厚との関係である。FIG. 2 shows the relationship between the processing time (time during which gas was flowed) and the thickness of the formed bolus-shaped silicon film.
これから処理時間とともにボーラス状シリコン膜の膜厚
は増加することがわかる。なお、ボーラス状シリコン膜
の膜厚はシリコン基板１２を切断面を走査型電子顕微鏡
でＭ察して求めた。また、三フッ化窒素ガスの代りにフ
ッ化キセノン（ＸｅＦｚ）ｔ三フッ化塩素（ＣｆｆＦａ
），フッ素（Ｆ２）ガスを用いても同様にボーラス状シ
リコン膜を形成できた。It can be seen from this that the thickness of the bolus silicon film increases with processing time. The thickness of the bolus silicon film was determined by observing the cut surface of the silicon substrate 12 using a scanning electron microscope. Also, instead of nitrogen trifluoride gas, xenon fluoride (XeFz), chlorine trifluoride (CffFa
), a bolus-shaped silicon film could be similarly formed using fluorine (F2) gas.
次に本発明の素子分離技術への一実施例を述べる。第３
図は素子分離工程を示す。用いたシリコン基板１１１は
ｐ型シリコン基板表面にアンチモンを１０μｍ拡散させ
た，次に表面を熱酸化し，厚さ５０ｎｍの酸化膜１１２
を形成した。パターニング後、本発明によるポーラス状
シリコン１１３を形成した。形成条件は先の実施例と同
じで処理時間は３０分である。次に基板温度８００℃，
３０分のドライ酸化によって酸化ボーラス状シリコン（
Ｏ Ｐ Ｏ Ｓ ： Ｏｘｉｄｉｚｅｄ Ｐｏｒｏｕｓ
Ｓｉｌｉｃｏｎ） １１４を形成した。表面の酸化層
を除去して素子形成領域１１５を得た。この素子分離技
術では従来のＬ Ｏ Ｇ Ｏ Ｓ （Ｌｏｃａｌ Ｏｘ
ｊｄａｔｉｏｎ ｏｆ Ｓｉｌｉｃｏｎ）に比人，バー
ズビークがないため、素子集積度を上げられる。また素
子形成領域と酸化領域の高さを同じにできるので、リソ
グラフイ工程において焦点ボケがない効果がある。Next, an embodiment of the element isolation technology of the present invention will be described. Third
The figure shows the element isolation process. The silicon substrate 111 used was made by diffusing antimony to 10 μm on the surface of the p-type silicon substrate, and then thermally oxidizing the surface to form an oxide film 112 with a thickness of 50 nm.
was formed. After patterning, porous silicon 113 according to the present invention was formed. The forming conditions were the same as in the previous example, and the processing time was 30 minutes. Next, the substrate temperature is 800℃,
Oxidized bolus silicon (
O P O S: Oxidized Porous
Silicon) 114 was formed. The oxide layer on the surface was removed to obtain an element formation region 115. This element isolation technology uses conventional LOGOS (Local Ox
Since there is no bird's beak in the semiconductor device (dation of silicon), the degree of device integration can be increased. Furthermore, since the height of the element formation region and the oxidation region can be made the same, there is an effect that there is no out of focus in the lithography process.
次に本発明のＳ Ｏ Ｉ （Ｓｉｌｉｃｏｎ ｏｎ Ｉ
ｎｓｕｌａｔｏｒ）への一実施例を述べる。第４図はＳ
ＯＩ形成工程を示す。用いた基板は表面に５μｍの熱酸
化膜２１１を有するシリコン単結晶基板２１２（Ｐ型，
面方位（１００），比抵抗２０Ω・ａｍ）とシリコン単
結晶基板２↓３ （ｐ型，面方位（１００），比抵抗２
０Ω・国）である。シリコン単結晶基板２１２と２１３
を貼り合せ後、常圧酸素雰囲気中で１１５０℃、２時間
熱処理した。次に機械研摩及び化学研摩によってシリコ
ン単結晶基板２１２の背面を残厚２μｍまで削った。次
にマスク用酸化膜２王４を形成後、本発明によるポーラ
ス状シリコン２１５を形成した。形成条件は先の素子分
離工程と同じである。次に基板温度８００℃、３０分の
ドライ酸化によって酸化ポーラス状シリコン２１６を形
威した。最終にマスク用酸化膜２１４を除去し、素子形
成領域２１７を得た。このＳＯＩ形成法は従来法に比べ
低コストかつ結晶状態の極めて優れた素子形戊領域を形
成できる効果がある。Next, the SOI (Silicon on I) of the present invention
An example of this will be described below. Figure 4 shows S
The OI formation process is shown. The substrate used was a silicon single crystal substrate 212 (P type,
Plane orientation (100), resistivity 20Ω・am) and silicon single crystal substrate 2↓3 (p-type, plane orientation (100), resistivity 2
0Ω・Country). Silicon single crystal substrates 212 and 213
After bonding, heat treatment was performed at 1150° C. for 2 hours in a normal pressure oxygen atmosphere. Next, the back surface of the silicon single crystal substrate 212 was ground down to a remaining thickness of 2 μm by mechanical polishing and chemical polishing. Next, after forming the mask oxide film 2 and 4, porous silicon 215 according to the present invention was formed. The formation conditions are the same as in the previous element isolation step. Next, oxidized porous silicon 216 was formed by dry oxidation at a substrate temperature of 800° C. for 30 minutes. Finally, the mask oxide film 214 was removed to obtain an element formation region 217. This SOI formation method has the effect of forming an element-shaped region at a lower cost and having an extremely excellent crystalline state than conventional methods.
次に本発明による完全分離技術（ＦｕｌｌＩｓｏｌａｔ
ｉｏｎ ｂｙ Ｐｏｒｏｕｓ Ｏｘｉｄｉｚｅｄ Ｓｉ
ｌｉｃｏｎ， ＦＩＰＯＳ）への一実施例を述べる。第
５図はＦＩＰＯＳ形成工程である。ｐ型シリコン基板３
０１（面方位（１００），比抵抗２０Ω・ｏ，ボロンド
ープ）上に窒化シリコン３０２及びレジスト３０３を形
成しボロンイオン注入によってｐ十層３０４を形成する
。次にレジスト３０３を除去後，水素イオン注入によっ
てｎ層３０５を形成する。次に第６図に示すポーラス状
シリコン形成装置によってＦＩ ＰＯＳ構造を形戊する
。装置の構戒は第１図に示した装置に電極４０１，直流
電源４０２と金線４０３を設け、基板４０４にバイアス
電圧を印加できるようになっていた。基板温度８５０℃
，Ｎ Ｆ ｓ流量４７の／分，Ｈｚ流Ｒ ｌ ｃｃ ／
分、圧力１．１丁ｏｒｒ ，バイアス電圧５０Ｖで３時
間、基板４０４を処理することによってボーラス状シリ
コン３０６を形成した。次に水蒸気雰囲気中で熱酸化す
ることでポーラス状シリコン酸化物３０７を形成する。Next, the complete separation technology according to the present invention (FullIsolat)
ion by Porous Oxidized Si
An example of this will be described below. FIG. 5 shows the FIPOS formation process. p-type silicon substrate 3
Silicon nitride 302 and resist 303 are formed on 01 (plane orientation (100), specific resistance 20 Ω·o, boron doped), and a p-type layer 304 is formed by boron ion implantation. Next, after removing the resist 303, an n layer 305 is formed by hydrogen ion implantation. Next, an FI POS structure is formed using a porous silicon forming apparatus shown in FIG. The configuration of the device was as shown in FIG. 1, with an electrode 401, a DC power source 402, and a gold wire 403 so that a bias voltage could be applied to a substrate 404. Substrate temperature 850℃
, N F s flow rate 47/min, Hz flow R l cc /
A bolus of silicon 306 was formed by treating the substrate 404 for 3 hours at a pressure of 1.1 orr and a bias voltage of 50V. Next, porous silicon oxide 307 is formed by thermal oxidation in a steam atmosphere.
このときの熱処理温度が７００℃以上の場合、水素イオ
ン注入で発生したドナーは消滅し、Ｐ形シリコン層３０
８を得る。また７００℃以下で熱酸化すればｎ型シリコ
ンＪｌ３０９を得る．〔発明の効果〕
本発明によれば、高純度ガスを用いるドライプロセスに
よってポーラス状シリコンを形成できるので従来の陽極
反応によるウエットプロセスに比ベフッ化水素水溶液の
容器や金属電極からの不純物汚染がないので高純度なボ
ーラス状シリコンを形成できる。またポーラス状シリコ
ンを酸化することにより素子分離領域を形戒できる。ま
た、基板に誘電体分離基板を用いることでＳＯＩ構造デ
バイスの製造もできる。さらにボーラス状シリコンの形
成時に基板に電界をかけることによってボーラス状シリ
コンの形成領域を制御でき、ＦＩＰＯＳ構造も形成でき
る。If the heat treatment temperature at this time is 700°C or higher, the donors generated by the hydrogen ion implantation disappear, and the P-type silicon layer 30
Get 8. In addition, if thermal oxidation is performed at a temperature below 700°C, n-type silicon Jl309 can be obtained. [Effects of the Invention] According to the present invention, porous silicon can be formed by a dry process using high-purity gas, so there is no impurity contamination from the hydrogen fluoride aqueous solution container or metal electrode compared to the conventional wet process using an anode reaction. Therefore, it is possible to form a bolus of highly pure silicon. Furthermore, element isolation regions can be formed by oxidizing porous silicon. Further, by using a dielectric isolation substrate as a substrate, an SOI structure device can also be manufactured. Furthermore, by applying an electric field to the substrate during the formation of bolus-shaped silicon, the formation region of bolus-shaped silicon can be controlled, and a FIPOS structure can also be formed.
第１図は本発明の一実施例の概略図、第２図は処理時間
とボーラス状シリコン膜の膜厚との関係図で、第３図は
素子分離工程の流れ図、第４図はＳＯＩ形成工程の流れ
図、第５図はＦＩＰＯＳ形成工程の流れ図、第６図はＦ
ＩＰＯＳ形成用のボーラス状シリコン形成装置を示す図
である６１１・・・石英製反応容器、１２・・・シリコ
ン基板、１３・・・炭素サセプタ，
１４・・・モーター
ｌ５・・・赤
外線加熱器、
１ ６・・・ＮＦ３
ガス、
１７・・・水素ガス、
２０・・・ガス供給管、
２１・・・ロータリポンプ。
第
３
図
第
１
図
１Ｓ
第
２
図
忽Ｉ！畔Ｐ：ＩＣ分）
第
４
図
第
５
図
第６図
ＨｚＮＦｚ
４−ｔ）ＺFig. 1 is a schematic diagram of an embodiment of the present invention, Fig. 2 is a diagram showing the relationship between processing time and bolus silicon film thickness, Fig. 3 is a flowchart of the element isolation process, and Fig. 4 is a SOI formation Process flowchart, Figure 5 is a flowchart of the FIPOS formation process, Figure 6 is F
611... Quartz reaction vessel, 12... Silicon substrate, 13... Carbon susceptor, 14... Motor 15... Infrared heater, 1 6...NF3 gas, 17...Hydrogen gas, 20...Gas supply pipe, 21...Rotary pump. Figure 3 Figure 1 Figure 1S Figure 2 I! P: IC minute) Fig. 4 Fig. 5 Fig. 6 HzNFz 4-t)Z
Claims (1)
を加熱する手段と、反応容器へ反応ガスを供給する手段
と、反応後のガスを排出する手段より成る装置において
、シリコン基板を５００℃以上に加熱し、反応容器内へ
フッ素元素を含むガスを流す工程を含むことを特徴とす
る半導体装置の製造方法。 ２、特許請求の範囲第１項において、フッ素元素を含む
ガスが三フッ化窒素（ＮＦ＿３）、フッ化キセノン（Ｘ
ｅＦ＿２）、三フッ化塩素（ＣｌＦ＿３）、フッ素（Ｆ
＿２）ガスであることを特徴とする半導体装置の製造方
法。 ３、特許請求の範囲第１項記載の工程の後、酸化工程を
含むことを特徴とする半導体装置の製造方法。 ４、特許請求の範囲第３項記載の酸化工程によつて素子
分離領域を形成することを特徴とする半導体装置の製造
方法。 ５、特許請求の範囲第１項記載の工程においてシリコン
基板が表面に酸化膜を有するシリコン基板と別のシリコ
ン基板とを接合した誘電体分離基板であることを特徴と
する半導体装置の製造方法。 ６、特許請求の範囲第５項記載の工程の後、酸化工程を
含むことを特徴とする半導体装置の製造方法。 ７、特許請求の範囲第６項記載の酸化工程によつて素子
分離領域を形成し、ＳＯＩ（ＳｉｌｉｃｏｎｏｎＩｎｓ
ｕｌａｔｏｒ）構造を形成することを特徴とする半導体
装置の製造方法。 ８、特許請求の範囲第１項記載の半導体装置の製造装置
においてシリコン基板に電界をかけるための電極を含む
ことを特徴とする半導体装置の製造装置。 ９、特許請求の範囲第８項記載の製造装置によつてＦＩ
ＰＯＳ（ＦｕｌｌＩｓｏｌａｔｉｏｎｂｙＰｏｒｏｕｓ
ＯｘｉｄｉｚｅｄＳｉｌｉｃｏｎ）構造を形成する工程
を含むことを特徴とする半導体装置の製造方法。[Claims] 1. An apparatus comprising a reaction vessel, a means for heating a silicon substrate to be processed in the reaction vessel, a means for supplying a reaction gas to the reaction vessel, and a means for discharging the gas after the reaction. A method for manufacturing a semiconductor device, comprising the steps of heating a silicon substrate to 500° C. or higher and flowing a gas containing elemental fluorine into a reaction container. 2. In claim 1, the gas containing elemental fluorine is nitrogen trifluoride (NF_3), xenon fluoride (X
eF_2), chlorine trifluoride (ClF_3), fluorine (F
_2) A method for manufacturing a semiconductor device characterized by using gas. 3. A method for manufacturing a semiconductor device, which comprises an oxidation step after the step recited in claim 1. 4. A method for manufacturing a semiconductor device, characterized in that an element isolation region is formed by the oxidation step according to claim 3. 5. A method of manufacturing a semiconductor device in the step described in claim 1, wherein the silicon substrate is a dielectrically isolated substrate in which a silicon substrate having an oxide film on the surface and another silicon substrate are bonded together. 6. A method for manufacturing a semiconductor device, comprising an oxidation step after the step according to claim 5. 7. An element isolation region is formed by the oxidation process described in claim 6, and SOI (Silicon Ins.
1. A method for manufacturing a semiconductor device, the method comprising forming a ulator structure. 8. A semiconductor device manufacturing apparatus according to claim 1, further comprising an electrode for applying an electric field to a silicon substrate. 9. FI by the manufacturing apparatus according to claim 8
POS (Full Isolation by Porous
1. A method of manufacturing a semiconductor device, the method comprising the step of forming an Oxidized Silicon structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23281789A JPH0397228A (en) | 1989-09-11 | 1989-09-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23281789A JPH0397228A (en) | 1989-09-11 | 1989-09-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0397228A true JPH0397228A (en) | 1991-04-23 |
Family
ID=16945242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23281789A Pending JPH0397228A (en) | 1989-09-11 | 1989-09-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0397228A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000051938A1 (en) * | 1999-03-04 | 2000-09-08 | Surface Technology Systems Limited | Chlorotrifluorine gas generator system |
-
1989
- 1989-09-11 JP JP23281789A patent/JPH0397228A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000051938A1 (en) * | 1999-03-04 | 2000-09-08 | Surface Technology Systems Limited | Chlorotrifluorine gas generator system |
| JP2002538068A (en) * | 1999-03-04 | 2002-11-12 | サーフィス テクノロジー システムズ ピーエルシー | Chlorine trifluoride gas generator |
| JP4689841B2 (en) * | 1999-03-04 | 2011-05-25 | サーフィス テクノロジー システムズ ピーエルシー | Chlorine trifluoride gas generator |
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