JPH0396357U - - Google Patents

Info

Publication number
JPH0396357U
JPH0396357U JP297590U JP297590U JPH0396357U JP H0396357 U JPH0396357 U JP H0396357U JP 297590 U JP297590 U JP 297590U JP 297590 U JP297590 U JP 297590U JP H0396357 U JPH0396357 U JP H0396357U
Authority
JP
Japan
Prior art keywords
bubbling
processing
foaming tube
liquid vapor
processing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP297590U
Other languages
English (en)
Other versions
JPH0734936Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP297590U priority Critical patent/JPH0734936Y2/ja
Publication of JPH0396357U publication Critical patent/JPH0396357U/ja
Application granted granted Critical
Publication of JPH0734936Y2 publication Critical patent/JPH0734936Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す処理液蒸気供
給装置の縦断面図、第２図は従来例を示す第１図
相当図である。 １……バブリングタンク、２……処理液、３…
…仕切壁、３ａ……処理液の流通口、４……バブ
リング室、５……発泡管、６……蒸気取出口、１
５……表面処理チヤンバ。

Claims (1)

  1. 【実用新案登録請求の範囲】 バブリングタンク内に処理液を貯溜し、処理液
    中に発泡管を浸漬して発泡管に窒素ガスを供給し
    、バブリング室に連通する蒸気取出口より処理液
    の飽和蒸気を取り出し、複数の表面処理チヤンバ
    へ処理液蒸気を流量調節可能に供給するように構
    成した処理液蒸気供給装置において、 バブリングタンク内を仕切壁で区画して複数の
    バブリング室を気密に形成するとともに、各仕切
    壁に処理液の流通口を開口し、各バブリング室内
    にそれぞれ発泡管と蒸気取出口を設け、窒素ガス
    を各発泡管へ個別に供給するように構成したこと
    を特徴とする処理液蒸気供給装置。
JP297590U 1990-01-16 1990-01-16 処理液蒸気供給装置 Expired - Lifetime JPH0734936Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP297590U JPH0734936Y2 (ja) 1990-01-16 1990-01-16 処理液蒸気供給装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP297590U JPH0734936Y2 (ja) 1990-01-16 1990-01-16 処理液蒸気供給装置

Publications (2)

Publication Number Publication Date
JPH0396357U true JPH0396357U (ja) 1991-10-02
JPH0734936Y2 JPH0734936Y2 (ja) 1995-08-09

Family

ID=31506818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP297590U Expired - Lifetime JPH0734936Y2 (ja) 1990-01-16 1990-01-16 処理液蒸気供給装置

Country Status (1)

Country Link
JP (1) JPH0734936Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016192515A (ja) * 2015-03-31 2016-11-10 株式会社東芝 気化システム
JP2017139317A (ja) * 2016-02-03 2017-08-10 株式会社Ｓｃｒｅｅｎホールディングス 処理液気化装置と基板処理装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016192515A (ja) * 2015-03-31 2016-11-10 株式会社東芝 気化システム
JP2017139317A (ja) * 2016-02-03 2017-08-10 株式会社Ｓｃｒｅｅｎホールディングス 処理液気化装置と基板処理装置

Also Published As

Publication number Publication date
JPH0734936Y2 (ja) 1995-08-09

Similar Documents

Publication Publication Date Title
JPH0396357U (ja)
JPS6394503U (ja)
JPS62200302U (ja)
JPS63149288U (ja)
US3417747A (en) Device for the production of pressure waves in liquids
JPH0367902U (ja)
JPS63136796U (ja)
JPS596835Y2 (ja) 浴中気泡発生機の発泡装置
ES368008A1 (es) Perfeccionamientos en los recubridores por cuchilla de ai- re.
JPH0243393Y2 (ja)
JPS63108629U (ja)
JPS6211622Y2 (ja)
JPS63126075U (ja)
JPS63136731U (ja)
JPH0298777U (ja)
JPS61121986U (ja)
JPS6350329U (ja)
JPS62156757U (ja)
JPS5810840U (ja) 充填塔
JPH0186882U (ja)
JPH03956U (ja)
JPS61153799U (ja)
JPH02150094U (ja)
JPH0161993U (ja)
JPS62104798U (ja)