JPH0396354U - - Google Patents
Info
- Publication number
- JPH0396354U JPH0396354U JP364290U JP364290U JPH0396354U JP H0396354 U JPH0396354 U JP H0396354U JP 364290 U JP364290 U JP 364290U JP 364290 U JP364290 U JP 364290U JP H0396354 U JPH0396354 U JP H0396354U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- temperature side
- side heater
- growth apparatus
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP364290U JPH072615Y2 (ja) | 1990-01-18 | 1990-01-18 | 化合物半導体単結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP364290U JPH072615Y2 (ja) | 1990-01-18 | 1990-01-18 | 化合物半導体単結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0396354U true JPH0396354U (en, 2012) | 1991-10-02 |
| JPH072615Y2 JPH072615Y2 (ja) | 1995-01-25 |
Family
ID=31507453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP364290U Expired - Fee Related JPH072615Y2 (ja) | 1990-01-18 | 1990-01-18 | 化合物半導体単結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH072615Y2 (en, 2012) |
-
1990
- 1990-01-18 JP JP364290U patent/JPH072615Y2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH072615Y2 (ja) | 1995-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |