JPH0395914A - Apparatus and method for inspecting and correcting of x-ray mask - Google Patents

Abstract

PURPOSE:To extremely easily inspect and correct an accurate X-ray mask in a short period of time by detecting a pattern image of the mask formed by image forming means, and collating the image detected by the means to a reference base pattern image to detect a defect. CONSTITUTION:A X-ray passed through an X-ray mask 129 forms an enlarged image on a two-dimensional X-ray detector 108, and it is transduced into an electric signal. A data comparator 115 compares X-ray mask measuring data with reference data, and outputs a defect signal. When an X-ray mask inspecting processor 102 outputs a defect signal, an X-ray mask correcting optical system 103 controls a deflector circuit 131, a gas flowrate regulating valve 127 and a heater 125, emits an electron beam to a defect position, and supplies desired reaction gas onto the mask 129. It is corrected by electron beam etching or electron beam deposition.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to an X-ray mask inspection/correction device and an X-ray mask inspection/correction method, and particularly to inspection of defects in a mask pattern of an X-ray mask. and regarding amendments.

(Prior art) Since X-ray masks form extremely fine patterns, fine defects such as pinholes and adhesion of dust can also cause shorts and other problems in circuit patterns. It will cause it.

Therefore, when manufacturing X-ray masks, careful inspections and modifications are repeated after manufacturing.

In this manufacturing and inspection process, as shown in FIG. 6, when an X-ray mask is completed on the production line (step 601), an X-ray mask inspection (step 602) is performed to detect defects in the X-ray mask. type (chips, dust, etc.),
Once the shape and location are clear, it is time to use the X-ray mask IIJ.
The EiTE process (step 603)
Defect relief measures are taken by making corrections according to the type, shape, and position of the defect in the line mask.

The X-ray mask thus repaired 1E is inspected again (step 602), and when the correction is completed and it is confirmed that there are no defects, it is transferred to the exposure process (step 604).

On the other hand, if any defects still remain, the process returns to the X-ray mask correction process (step 603) and the same operation is repeated.

In such an X-ray mask inspection and repair method, it is necessary to convey the defect + nm detected by the inspection device to the repair device, and to correctly align the X-ray mask with the repair device.
The time required for precise alignment is a major problem that hinders improvements in workability.

Furthermore, since defects in X-ray masks are uncertain in their type, shape, location, etc., the correction conditions (gas pressure,
It is often necessary to change the accelerating voltage, temperature, correction time), and it is necessary to perform a re-inspection each time a correction is made to confirm whether the correction is appropriate each time.

Therefore, there is a problem in that redundancy of repeating the inspection and correction process cannot be avoided.

Furthermore, since both the inspection device and the correction device are operated under vacuum conditions, it is necessary to break the vacuum when inserting and removing the X-ray mask, which also poses a problem that prevents reduction of the time required for inspection and correction.

Furthermore, after the inspection, when transferred to the correction equipment,
Since line masks are once exposed to the atmosphere, there is a risk that new atmospheric dust may adhere to them.

(Problem to be Solved by the Invention) As described above, according to the conventional mask inspection and correction method, strict alignment must be performed each time the mask is transferred from the inspection device to the correction device or from the correction device to the inspection device. However, since the type, shape, location, etc. of defects in X-ray masks are uncertain, the repair conditions (gas pressure, accelerating voltage, There is a problem in that it is often necessary to change the temperature (temperature, correction time), and it is necessary to re-inspect each time the correction is made to confirm whether the correction is appropriate each time.

The present invention has been made in view of the above-mentioned circumstances, and aims to reduce the time required for inspection and correction and improve workability.

[Structure of the invention]

(Means for Solving the Problems) Therefore, the present invention provides a defect inspection means for inspecting defects on an X-ray mask installed in a sample chamber, and a repair means for making corrections based on the output of the defect inspection means. and
It is configured so that corrections can be made immediately while checking the correction status in real time.

That is, the X-ray mask defect inspection and correction apparatus of the present invention includes an X-ray mask inspection means for detecting defects in a mask to be inspected;
The apparatus is comprised of a processing means for determining correction conditions based on the output of the ray mask inspection means, and an X-ray mask correction means for correcting defects in the X-ray mask according to the output of the processing means.

The X-ray mask inspection means includes an image forming means for forming a mask pattern image of the mask to be inspected by irradiating the X-ray mask with X-rays, and detecting the pattern image formed by the image forming means. and an image detecting means.

Further, the X-ray mask repair means is configured to carry out the repair by etching or deposition by irradiating the defect location with a laser beam or particle beam and supplying a reactive gas.

(Function) According to the above structure, by performing correction while monitoring defects in the X-ray mask in real time, the redundant processes in conventional inspection and correction methods can be greatly simplified, and inspection and correction This makes it possible to significantly reduce the time required.

Furthermore, since the inspection can be carried out without being exposed to the atmosphere before it is repaired, highly reliable repair IE is possible.

Furthermore, by selecting a reactive gas, it is also possible to perform etching and deposition with the same gas, resulting in extremely high workability.

(Embodiment) Below, please refer to the drawings for the mask inspection/correction device and mask inspection/correction method according to the embodiment of the present invention! ' I will explain in detail.

FIG. 1 is a diagram showing the overall configuration of a mask inspection and repair apparatus according to a first embodiment of the present invention.

This mask inspection and correction device consists of an X-ray mask inspection optical system 1
01, an X-ray mask inspection processing system 102, an X-ray mask correction electron optical system 103, and a sample chamber 104 having a table for supporting and aligning the X-ray mask and a gas introduction mechanism. Once installed in the sample chamber 104, the X-ray mask is inspected as it is by the X-ray mask inspection optical system 101, and the inspection results are processed by the X-ray mask inspection processing system 102. First of all, electron optical system for X-ray mask correction 1
03 is activated to perform etching of the defective portion or deposition on the defective portion.

The X-ray mask inspection optical system 101 includes an X-ray source 105 such as an SOR5 plasma X-ray source or an electronically excited X-ray source;
A condensing optical element 106 condenses the X-rays from the radiation source 105, and the X-rays condensed by the condensing optical element illuminate an X-ray mask 129 and form a mask pattern on the X-ray mask 129. A two-dimensional X-ray detector 108 detects transmitted light from the X-ray beam through an objective optical element 107.

Here, 109 is an orifice. Here, as the condensing optical element 106 and the objective optical element 107, a zone plate, a Walter type mirror, a Schwarzschild type mirror coated with a multilayer film, etc. can be used. Furthermore, as the two-dimensional X-ray detector 108, an MCP (microchannel plate), CCD, or the like is used.

In addition, the processing system 102 for X-ray mask inspection includes a host l/CPU.
(Central processing unit) 110, a hard disk 111 designed by a CAD system and storing X-ray mask design data, a dot 1/conversion circuit 112, a reference data conversion circuit 113, a table control circuit 114, and a data It is composed of a comparison circuit 115 and a position circuit 116. The host CPU 10 and each circuit
It is connected to the O bus 117a and the DMA bus 1 17b.

In addition, the host CPU i 10 includes a dot conversion circuit 112, a data comparison circuit 115, and a table control circuit 11.
4. Directly control the position circuit 116 and hard disk 111.

Further, the X-ray mask correction optical system 103 includes the electron gun 11
8, a focusing coil 119 that focuses the electron beam from the electron gun 118, a planking tTs W120, an aperture 121, an objective coil 122, and a deflector 123.

Moreover, when the X-ray mask 129 is placed in the sample chamber 104, a table consisting of an XY table for moving the X-ray mask 129 in the Xlj direction and the Y direction, and a θ table for rotating the X-ray mask is provided. 124, a laser measuring device 130 that detects the position of the XY table, an X direction drive device Mx that drives the XY table in the X axis direction,
It is composed of a Y-direction drive device My that drives the Y-table in the Y-axis direction, and a θ motor Mθ that rotationally drives the θ table. Note that a hole is provided in the center of each table to guide the X-rays passing through the X-ray mask 129 to the objective optical element 108. In addition, the X-direction drive device and the Y-direction drive device each include a fine movement drive device that finely moves the XY table and a coarse movement drive device that coarsely moves the XY table. Use one that uses Further, as the coarse movement drive device, for example, one using a step motor can be used. Further, 125 is a heater for heating the X-ray mask during correction, 126 is a reactive gas supply system, 127 is a gas supply valve, and 128 is a gas supply nozzle.

Here, the X-rays emitted from the X-ray source 105 are condensed by the condensing optical element 106 and irradiate each position on the mask pattern of the X-ray mask 129.

The X-rays that have passed through the X-ray mask 129 are imaged by the objective optical element 107 and form an enlarged image on the two-dimensional X-ray detector 108. This enlarged image is detected by the X-ray detector 108.
is converted into an electrical signal.

In addition, position circuit ]-16 is a two-dimensional X-ray detector 1 0 8
The signal output from the converter is amplified, analog/digital (A/D) converted, and the digitally converted signal is normalized.

The X-ray mask 129 is placed on the θ table,
Using this θ table, precise positioning is performed so that the XY directions of the pattern on the X-ray mask 129 match the XY directions of reference data, which will be described later. An XY table is provided below the θ table, and this XY table
The coarse movement drive devices of the directional drive device MX and the Y direction drive device My perform coarse movement driving to roughly position the object, and then the fine movement drive device strokes it so that precise positioning is performed. In addition, the movement of XY Ryosuke, that is,
The position of the Y table is precisely measured by a laser beam length device 130, and the pattern on the X-ray mask 129 and
The positional relationship between it and the place where the enlarged image is formed on the two-dimensional X-ray detector 108 is accurately grasped. In this way, an X-ray mask detection image is obtained.

On the other hand, for example, X-ray mask design data output from a CAD system (computer-aided design system) is format-converted into data for electron beam lithography, and then stored in the hard disk 111. hard disk 111
The electron beam writing data read out from the dot conversion circuit 112 is converted into dot pattern data.

The reference data conversion circuit 1]3 obtains reference data by superimposing the point spread function of the optical detection system 101 on this dot pattern data.

In the data comparison circuit 115, this reference data conversion circuit 1
The reference data converted in step 13 is compared with the aforementioned X-ray mask measurement data, the absolute value of this difference is determined, and the image of this difference is binarized using an appropriate defect determination threshold to determine the location of the defect. Outputs a defect signal indicating size characteristics (pattern chipping, dust adhesion, etc.).

FIG. 2 shows a detailed explanatory diagram of the principle of defect detection in the apparatus of this embodiment.

In this mask inspection apparatus, the X-ray source 1 of the optical detection system 101
The X-rays emitted from the X-ray detector 5105 and condensed by the condensing optical element pass through the X-ray mask 129, and the transmitted light is enlarged and imaged on the two-dimensional X-ray detector 5108. Detected at

The detection signal 206 obtained by the X-ray detector 108 is A/D converted and normalized to obtain measurement data. Here, a one-dimensional component is shown.

On the other hand, the X-ray mask design data 202 stored in the hard disk 111 of the X-ray mask inspection processing system 102 is dot-converted by the dot conversion circuit 212 to become a dot pattern 203 for electron beam writing. By superimposing the point spread function 204 of the optical system on this dot pattern 203, base data 205 is obtained. 205 is this) J. 'A shows a one-dimensional segment of data.

This operation causes the dot pattern 203 to be pseudo-
This means that it is imaged by an optical system and detected as reference data 205, and by comparing this reference data 205 and measurement data 206, it is effective to cancel out the influence of spatial frequency modulation.

In addition, the data comparison circuit 115 calculates the absolute value of the difference between the measurement data 206 and the reference data 205, and binarizes this difference image using an appropriate defect determination threshold to determine the location and size of the defect. Obtain the defect signal shown. Incidentally, 207 indicates Ii! including the defective portion formed based on this defect signal. This shows the ii1 elephant.

In this way, according to the mask inspection optical system, defects are detected using X-rays, and even minute defects in the X-ray mask can be detected.

This defect signal is transmitted to the X-ray mask correction optical system 10.
3 deflector circuit 131 and gas flow rate adjustment valve 127
, is used as a control signal for the heater 125.

The X-ray mask correction optical system 103 accelerates thermoelectrons generated from an electron gun 18 made of LaB6W, etc., and focuses them with a focusing coil 119 to generate Jl. : is further focused by the objective coil 122 and placed on the X-ray mask 129 with a diameter of 4
Narrow down to 0 nm or less. The focusing coil 119 may have a single stage as shown in FIG. 1, or may have a multi-stage structure.

In addition, the entire lens barrel is attached to the X-ray mask 129 within the range where the electron beam spot diameter does not exceed the allowable value.
It is okay to lean in an I direction.

When the defect signal is output in this way, based on this, the X-ray mask correction optical system 103 and the deflector circuit 1
31, gas flow control valve 127, and heater 125 are controlled, and the electron beam is deflected to an appropriate position according to the position, degree, and shape of the defect, and the defect position is irradiated with the electron beam. 127 selects a reactive gas, and the desired reactive gas is supplied onto the X-ray mask 129 through the nozzle 128 with its flow rate adjusted.

Modifications are then made by electron beam etching or electron beam deposition.

The appearance of this mask surface is X-ray mask inspection system 101
is monitored by the deflector circuit 131 as a defect signal.
and is fed back to the gas flow ffi adjustment valve 127 and heater 125.

Then, as the end point of the etch or deposition is approached, the deposition rate or etch rate is reduced by adjusting the gas flow control valve 127 to reduce the gas flow rate, and when the end point is reached, the valve is tightened to reduce the gas flow rate. The electron beam is planked by the ranking electrode 120 and the aperture 121.

For example, if the X-ray mask has a W absorber pattern, the source chamber 126 is filled with WF6,
A nozzle 128 having a tip diameter of about 0.2 mm is set close to the X-ray mask. Here, the acceleration voltage of the electron beam is 10keV, and the current density is 8xlO.
A/cIII, gas pressure 2×1-4 Q torr, 0.4 at room temperature (25℃)
Deposited at a deposition rate of nmps and 0.1.2nm at 130°C
It is etched at an etching rate of i/S.

Therefore, by controlling the substrate temperature, it is possible to switch between deposition and etching.

In this way, by immediately monitoring and correcting defects in the X-ray mask, the redundant process of conventional inspection and correction can be significantly shortened.

In addition, with this method, defects can be inspected using the wavelength following exposure by the X-ray optical system, making it possible to more accurately discover abnormalities in the absorber.

Next, a second embodiment of the present invention will be described.

FIG. 3 shows the overall structure of a device according to a second embodiment of the invention. In the second embodiment shown in FIG. 3, correction is performed using an ion beam instead of an electron beam.

Similar to the first embodiment, this mask inspection/correction device has the following features:
It has an optical system for X-ray mask inspection 101, a processing system for X-ray mask inspection 102, a focused ion beam optical system for X-ray mask correction 303, and a table for supporting and aligning the X-ray mask. Once installed in the sample chamber 104, the X-ray mask is inspected as it is by the X-ray mask inspection optical system 101, and
Based on the inspection results, the X-ray mask inspection processing system 102 operates the X-ray mask correction electron optical system 303, and etching or forming a thin film on the defective portion is performed by ion beam etching or ion beam deposition. It looks like this.

Here, a focused ion beam optical system 303 for X-ray mask correction
is Ga+ generated from the Ga+ ion source 305
Ions are accelerated by an accelerating electrode 306, focused by an electrostatic lens 307, and narrowed down to a diameter of about 40 ni on an X-ray mask. Here, 308 is a planking electrode, 309 is an aperture, and 310 is a deflector.

Further, the entire lens barrel may be tilted with respect to the X-ray mask within a range where the ion beam spot diameter on the X-ray mask does not exceed a permissible value.

The other parts are completely the same as the first embodiment,
Identical parts are given the same reference numerals.

Next, defect detection and correction operations will be explained.

Similarly to the first embodiment, when a defect signal is output from the X-ray mask inspection optical system 101, the deflector circuit 131 is activated in the X-ray mask correction focused ion beam optical system 303 based on the defect signal. and gas flow rate adjustment valve 127,
The heater 125 is controlled, the ion beam is deflected to an appropriate position according to the position, degree, and shape of the defect, and the ion beam is irradiated to the defect position.
27 selects a reactive gas, and the desired reactive gas is supplied onto the X-ray mask 129 through the nozzle 128 with its flow rate adjusted.

Modifications are then made by ion beam etching or ion beam deposition.

And the appearance of this X-ray mask surface is X-ray mask inspection system 1
01 and deflector circuit 1 as a defect signal.
31, gas flow rate control valve 127, and heater 125.

When the end point of etching or deposition is near, the deposition rate or etching rate is reduced by adjusting the gas flow control valve 127 to reduce the gas flow rate, and when the end point is reached, the valve is tightened and planing is performed at the same time. The ion beam is planed by an electrode 308 and an aperture 309.

For example, if the X-ray mask has a W absorber pattern, the source chamber 126 contains W (CO6
) and a nozzle 128 with a tip diameter of about 0.2 mII1.
is set close to the X-ray mask. Furthermore, since W (COe) is a solid, a heater is wound around the source chamber 126 and the nozzle 128b, and the temperature is increased to 60°C.
It is designed to sublimate W (CO6) by heating it to a certain degree.

Here, when the acceleration voltage of the ion beam is 30 keV and the gas pressure in the sample chamber is 2 x 10 torr, 3 to 5
When the ion beam is irradiated with the gas flow rate control valve 127 closed and the supply of W (COs) stopped, the deposition rate is 3 atoms/ton.
etched at an etching rate of

Therefore, here, it is possible to switch between deposition and etching by adjusting the gas supply.

In this way, by immediately monitoring and correcting defects in the X-ray mask, the redundant process of conventional inspection and correction can be significantly shortened.

Furthermore, with this method as well, defect inspection can be performed using the 041st wavelength of exposure by the X-ray optical system, making it possible to more accurately discover abnormalities in the absorber.

Next, as a third embodiment of the present invention, an example in which a laser beam is used to correct an X-ray mask will be described.

FIG. 4 shows the purchase of the entire apparatus according to the third embodiment of the present invention. In the third embodiment shown in FIG. 2, the correction is performed using a laser beam instead of the electron beam.

Similar to the first embodiment, this mask inspection/correction device has the following features:
It has an optical system for X-ray mask inspection 101, a processing system for X-ray mask inspection 102, an optical system for X-ray mask correction 403, a table for supporting and aligning the X-ray mask, and a gas introduction mechanism. Once installed in the sample chamber 104, the X-ray mask is inspected as it is by the X-ray mask inspection optical system]01, and the Processing system] 02 activates the X-ray mask correction optical system 403 based on the inspection results, and etching or forming a thin film on the defective part is performed by laser beam etching or laser beam deposition. There is.

Here, the X-ray mask correction optical system 403 converts the Ar laser beam generated from the Ar laser light source 405 into an AO
(Acoustic Optical) A scanner 406 changes the diffraction angle to blank the laser beam, and a condenser lens 407 diverges the laser beam.The first lens 408 focuses the beam, and the laser beam is passed through an aperture 409 to cut side lobes. The second lens 410 is used to narrow down the beam to a diameter of about 40 rv on the X-ray mask.

Here, the laser beam that exits the AO scanner 406 at an appropriate diffraction angle becomes a diverging light by the condenser lens, and when the beam is condensed by the first lens 408 and narrowed down to the diffraction limit, the laser beam as shown in FIG. This results in a spot with an intensity distribution called an Airy disk with side lobes as shown in (a). This side lobe is cut by an aperture 409 to leave only the main lobe as shown in FIG. 5(b). Also, in order to make this main lobe even thinner, the first
Abogization may be applied to the lens.

Further, the entire correction optical system 403 may be tilted with respect to the X-ray mask within the focal depth of the laser beam spot on the X-ray mask.

The other parts are completely the same as the first embodiment,
Identical parts are given the same reference numerals.

Next, defect detection and correction operations will be explained.

Similarly to the first embodiment, when a defect signal is output from the X-ray mask inspection optical system 101, based on the defect signal, the data comparison circuit of the processing system 102 outputs the X-ray mask repair optical system as defect information. System 403 is forced to use human power.

Here, the table 125 is controlled based on this defect information to align the defect position with the laser beam spot position. Also, depending on the type of defect, the gas flow control valve 12 may be
7. The heater 125 is controlled, the table 125 is operated according to the position, degree, and shape of the defect, and the laser beam is irradiated to the defect position, while the gas flow rate three-way control valve 4
27 selects a reactive gas, and the desired reactive gas is supplied onto the X-ray mask 129 through the nozzle 128 with its flow rate adjusted.

Modifications are then performed by laser beam etching or laser beam deposition.

And the appearance of this X-ray mask surface is X-ray mask inspection system 1
01, and the table control circuit 114, gas flow rate adjustment valve 127, and heater 1 are monitored as defect signals.
25 is fed back.

Then, as the end point of etching or deposition approaches, the deposition rate or etch rate is reduced by adjusting the three-way gas flow control valve 127 to reduce the gas flow rate, and when the end point is reached, the valve is simultaneously tightened. Planking the laser beam using an AO scanner and averture.

For example, if the X-ray mask is an X-ray mask having an absorber pattern of W, the source chamber 426a is filled with W (CO
s), the source chamber 426b is filled with CI2,
A nozzle with a tip diameter of about 0.2 ml1 is set close to the X-ray mask. Also W(C
Since O6) is a solid, a heater is wound around the source chamber 126a and the nozzle 128 to heat it to about 60° C. and sublimate W(CO6). Here, the power of the Ar laser is 300mW, W (COs)
When the gas pressure is 1 torr, 10008/sec
After depositing at a deposition rate of
Laser power 100mW, C12 gas pressure 300
When Torr is used, etching is performed at an etching rate of 1048/sec.

Therefore, here, it is possible to switch between deposition and etching by adjusting the gas supply.

In this way, by immediately monitoring and correcting defects in the X-ray mask, the redundant process in conventional inspection and correction can be significantly shortened.

In addition, with this method as well, defect inspection can be performed using the wavelength at the time of exposure by the X-ray optical system, making it possible to more accurately discover abnormalities in the absorber.

Further, in the above-described embodiments, a case where a transmission type X-ray mask is used has been described, but the present invention is also applicable to a case where the X-ray mask is a reflection type. In this case, the grooves are formed so that defects in the mask pattern are detected based on the X-rays reflected from the X-ray mask.

In the above embodiment, the X-ray mask is inspected by focusing the X-rays from the X-ray source using the condensing optical element and guiding them to the two-dimensional detector through the mask.
A minute spot may be formed from X-rays from an X-ray source and then enlarged and projected.

〔Effect of the invention〕

As explained above, according to the present invention, the inspection and repair of the X-ray mask are performed instantly within the same device, so the repair conditions can be controlled in real time according to the position, shape, and type of the defect. This makes it possible to inspect and repair X-ray masks with high accuracy in a short time and with great ease.

[Brief explanation of drawings]

FIG. 1 is an overall configuration diagram showing the first embodiment of the present invention, FIG. 2 is a diagram explaining the principle of mask pattern defect detection in the first embodiment, and FIG. 3 is a diagram showing the second embodiment of the invention. FIG. 4 is a diagram showing the overall configuration of the third embodiment of the present invention, and FIGS. FIG. 6 is an explanatory diagram showing a beam change with respect to the previous one, and FIG. 6 is a diagram showing a flowchart of conventional mask inspection and the three-way process. 101...X-ray mask inspection optical system, 102...X
Processing system for ray mask inspection, 103... X-ray mask repair It
Electron optical system for use, 104... Sample chamber, 105... X-ray source, 106... Condensing optical element, ]07... Objective optical element, 108... Two-dimensional X-ray detector, 109 ... Orifice, 110 ... CPU (central processing unit), 1
DESCRIPTION OF SYMBOLS 11... Node disk, 112... Dot conversion circuit, 1]3... Reference data conversion circuit, 114...
Table control circuit, 115...data comparison circuit, 1]
6... Position circuit, 1 1 7 a-1/0 bus, 117b-DMA bus, 118... Electron gun, 11
1...Focusing coil, 120...Planking electrode,
121...Aperture, 122...Objective coil, 1
23...Deflector, 124...Table, 125...
・Heater, 126... Reactive gas supply system, 127...
・Gas supply valve, 128...Gas supply nozzle, 12
9... X-ray mask, 130... Laser measuring device, 13
DESCRIPTION OF SYMBOLS 1... Deflector circuit, 303... Focused ion beam optical system for X-ray mask repair IE, 305... Ga+ ion source, 306... Accelerating electrode, 307... Electrostatic lens, 3
08... Planking electrode, 309... Aperture, 310... Deflector, 403... Optical system for X-ray mask correction, 404... Ar laser light source, 406... A
O Scanner 407... Condenser lens, 408
...First lens, 409...Aperture, 410
...Second lens. Completed 1}1〒1sk(0) (Figure 5 of b

Claims (5)

[Claims] (1) A sample chamber in which an X-ray mask is installed; an image forming means for forming a mask pattern image of the mask to be inspected by irradiating the X-ray mask installed in the sample chamber with X-rays; and this image formation. an image detection means for detecting a pattern image formed by the means; a pattern storage means for storing a reference standard pattern of the X-ray mask; and a pattern storage means for reading the reference standard pattern from the pattern storage means to form a reference standard pattern image. An X-ray mask comprising a reference standard pattern forming means, and a defect detecting means for detecting defects in the X-ray mask by comparing the reference standard pattern image with a mask pattern image detected on the image detecting means. An inspection system, a charged particle generating means, a charged particle accelerating means, a charged particle focusing means for focusing the charged particles into a minute spot, and an X-ray mask that deflects the minute spot of the charged particles and is installed in the sample chamber. An X-ray mask inspection and correction apparatus comprising: a deflection means for irradiating the minute spot; and a reactive gas introducing means for introducing a reactive gas into the X-ray mask installed in the sample chamber. (2) a sample chamber in which an X-ray mask is installed; an image forming means for forming a mask pattern image of the mask to be inspected by irradiating the X-ray mask installed in the sample chamber with X-rays; an image detection means for detecting a pattern image formed by the means; a pattern storage means for storing a reference standard pattern of the X-ray mask; and a pattern storage means for reading the reference standard pattern from the pattern storage means to form a reference standard pattern image. An X-ray mask comprising a reference standard pattern forming means, and a defect detecting means for detecting defects in the X-ray mask by comparing the reference standard pattern image with a mask pattern image detected on the image detecting means. an inspection system; a laser generating means; a laser focusing means for focusing the laser generated by the laser generating means into a minute spot; and a method for irradiating the laser minute spot formed by the laser focusing means to a desired position on the mask. An X-ray mask inspection and correction apparatus comprising: a positioning means; and a reactive gas introduction means for introducing a reactive gas into the X-ray mask installed in the sample chamber. (3) An X-ray mask installation step in which an X-ray mask is installed in the sample chamber, and a mask pattern image of the mask to be inspected is formed by irradiating the X-ray mask installed in the sample chamber with X-rays. a pattern image detection step of detecting a pattern image; a defect detection step of detecting defects in the X-ray mask by comparing the detected mask pattern image with a reference standard pattern image of the X-ray mask; While supplying a reactive gas to the X-ray mask, a micro beam of charged particles or a laser beam is irradiated to the defect location based on the defect,
An X-ray mask inspection and repair method comprising: a repair step of repairing defects in the X-ray mask by etching or deposition. (4) The X-ray mask inspection/correction method according to claim (3), wherein the inspection step and the correction step are performed in real time. (5) The modification step is a step in which etching and deposition are performed with the same gas by using a metal-containing halide constituting the absorber of the X-ray mask as a reactive gas and controlling the gas flow rate and substrate temperature. The X-ray mask inspection and correction method according to claim (3).