JPH07286965A - Pattern examination device - Google Patents

Abstract

PURPOSE:To examine the form of a pattern efficiently at a high speed and a high accuracy, by comparing the gap area between a set irradiation position found from the rotation slippage amount of the beam irradiation position and the irradiation form, and the actual irradiation position, with a set tolarable defect area. CONSTITUTION:The rotation of an examining sample 13 together with a cassette 17 is regulated by making the X-Y axial direction of an X-Y stage 16 as the standard, by recognizing an alignment mark, the sample 13 is conveyed in a chamber 14 and loaded on the stage 16, and the alignment mark is moved to the irradiation point of the electron beans by the control of an X-Y stage control device 18, so as to discharge the electron beams. A pattern examination deciding device 34 receives the electron amount from an electron detector 20 when the electron beams are radiated to the alignment mark, detects the rotation slippage amount theta of the actual irradiation position to a set beam irradiation position, and finds the slippage amount of an examination pattern irradiation beam, and a pattern defection area depending on the rotating slippage theta. When the pattern defection area is larger than the set tolerable defect area, it is decided that the pattern has a defect.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern inspection device for inspecting a pattern shape state formed on a semiconductor device, a mask or the like, for example, a pattern defect at high speed and with high accuracy.

[0002]

2. Description of the Related Art A method of irradiating a semiconductor wafer with an electron beam is used for inspecting a pattern shape formed on an inspection sample such as a semiconductor wafer. The first method is to scan the entire measurement range of a semiconductor wafer with an electron beam having a constant small beam diameter, detect the amount of backscattered electrons generated at this time, and store it as a two-dimensional image in an image memory. The pattern defect on the inspection sample is detected by comparing the two-dimensional image with the pattern data.

The second method is to irradiate only the edge of the pattern on the inspection sample with an electron beam having a constant cross-sectional area, detect the amount of backscattered electrons generated at this time, and obtain the pattern irradiation area. The pattern irradiation area is compared with the predicted area obtained from the design data to detect the pattern defect on the inspection sample.

However, in the first method, the electron beam having a constant small beam diameter is scanned over the entire measurement range, and after that, image processing is performed to detect the pattern defect on the inspection sample. The time required for image processing becomes long, and it takes time until the result of the pattern inspection is obtained.

In the second inspection method, since the electron beam having a constant cross-sectional area is used, the size of the inspection pattern cannot be dealt with, and the pattern inspection efficiency is poor. or,
Since the electron beam is irradiated to the pattern edge, a special irradiation pattern division algorithm is required for this irradiation. Moreover, since the electron beam is applied only to the edge of the pattern, it is not possible to detect the void defect existing inside the pattern and the remaining defect existing outside the pattern.

[0006]

As described above, the time required for the inspection of the pattern shape and the image processing time becomes long, and the inspection of the pattern takes time. Further, the size of the inspection pattern cannot be dealt with, the efficiency of the pattern inspection is poor, and since the electron beam is irradiated only to the edge of the pattern, a special irradiation pattern division algorithm is required. No defect can be detected outside the pattern. Therefore, it is an object of the present invention to provide a pattern inspection device capable of inspecting a pattern shape efficiently, at high speed and with high accuracy.

[0007]

According to a first aspect of the present invention, there is provided a pattern inspection apparatus for inspecting a pattern shape of an inspection sample by detecting charged particles generated when an inspection sample is irradiated with an electron beam. Rotational deviation detection means for detecting the rotational deviation amount of the actual beam irradiation position when the electron beam is applied to the inspection sample with respect to the set beam irradiation position obtained from the data, and at least the detected rotational deviation amount and electron beam Based on the irradiation shape, the deviation area of the actual beam irradiation position with respect to the set beam irradiation position is obtained, and a judgment means for judging the pattern shape by comparing the deviation area and the set allowable defect area is provided. It is a pattern inspection device to be achieved.

According to a second aspect of the present invention, the determining means determines the electron beam irradiation area by Ds, the irradiation energy per unit area by E, and the electron detection sensitivity by the material characteristics per unit irradiation area and unit irradiation energy is chrome pattern. In the case of G chrome and quartz in the case of quartz, α is the occupancy of the chromium pattern in the irradiation region, β is the occupancy of the pattern omission in the irradiation region, and γ is the occupancy of the irradiation deviation region in the irradiation region. Dd Dd = α · Gchrome · E · Ds + (β + γ) Gquartz · E · Ds is calculated, and the pattern shape is determined based on the detected value Dd and the electron beam irradiation shape.

According to claim 3, when the electron beam irradiation shape is a rectangle, the determining means has a length l of each side of the rectangle,
When m and the amount of rotational deviation θ, the relationship between the pattern missing defect area Mkw and the set allowable defect area Ms is Mkw = Gchrome · Ds / g−Dd / g · E− (l ² + m ² ) θ / 2 <Ms ( If g = Gchrome-Gquartz), it is determined that there is no defect in the pattern shape.

According to the fourth aspect, when the electron beam irradiation shape is an isosceles right triangle, the determining means determines the pattern missing defect area M when the length m of each side sandwiching the right angle and the rotation deviation amount θ.
If the relationship between kw and the set allowable defect area Ms is Mkw = Gchrome · Ds / g−Dd / g · E−m ² · θ <Ms (g = Gchrome-Gquartz), it is determined that there is no defect pattern shape. To do.

According to the fifth aspect, when the electron beam irradiation shape is a rectangle in a continuous pattern, the determining means determines the pattern missing defect area Mkw when the lengths l and m of each side of the rectangle and the rotation deviation amount θ. The relationship with the set allowable defect area Ms is as follows: Mkw = Gchrome · Ds / g−Dd / g · E−m ² · θ / 2 <Ms or Mkw = Gchrome · Ds / g−Dd / g · E-1 ² If θ / 2 <Ms (g = Gchrome-Gquartz), it is determined that the pattern shape has no defects.

According to a sixth aspect of the present invention, when the shift region of the electron beam in the continuous pattern does not overlap the quartz pattern but overlaps the adjacent chrome pattern, the determining means determines the pattern defect defect area Mkw and the set allowable defect area Ms. If the relationship is Mkw = Gchrome.Ds / g-Dd / g.E <Ms (g = Gchrome-Gquartz), it is determined that there is no defect pattern shape.

[0013]

According to the first aspect of the present invention, the amount of rotation deviation of the actual beam irradiation position when the electron beam is irradiated on the inspection sample with respect to the set beam irradiation position is detected. The deviation area of the actual beam irradiation position with respect to the set beam irradiation position is obtained based on the detected rotation deviation amount and electron beam irradiation shape, and the pattern shape is determined by comparing this deviation area with the set allowable defect area. To do. As a result, the pattern shape can be inspected even if the beam irradiation position is misaligned.

According to the second aspect of the present invention, in determining the pattern shape, the irradiation area of the electron beam is Ds, the irradiation energy per unit area is E, and the electron detection sensitivity according to the material characteristics per unit irradiation area and unit irradiation energy is chromium. If the pattern is Gchrome and the quartz is quartz, the chrome pattern occupancy in the irradiation region is α, the pattern vacancy occupancy in the irradiation region is β, and the irradiation deviation region occupancy in the irradiation region is γ. The detection value Dd Dd = α · Gchrome · E · Ds + (β + γ) Gquartz · E · Ds is obtained, and the pattern shape is determined based on the detection value Dd and the electron beam irradiation shape.

According to the third to sixth aspects, when the electron beam irradiation shape is a rectangle, when the electron beam irradiation shape is an isosceles right triangle, it is a continuous pattern, and when the electron beam irradiation shape is a rectangle, it is a continuous pattern. When the shift region of the electron beam does not overlap the quartz pattern but overlaps the adjacent chrome pattern, the pattern missing defect area Mkw in each of
If the relationship between the setting allowable defect area Ms and the setting allowable defect area Ms is Mkw <Ms, it is determined that there is no defect in the pattern shape.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram of a pattern inspection apparatus. An electron gun 2 is provided above the electron beam scanning body 1.

In this electron beam scanning body, an electromagnetic illumination device 3, a blanking electrode 4, an electromagnetic projection lens 5, an electromagnetic reduction lens 6, and an electromagnetic objective lens 7 are arranged along the traveling direction of the electron beam emitted from the electron gun 2. And the shaping deflector 8, the main deflector 9, and the sub-deflector 10 are also disposed.

A first shaping aperture 11 is arranged between the blanking electrode 4 and the electromagnetic projection lens 5 on the traveling path of the electron beam, and a first shaping aperture 11 is arranged between the electromagnetic projection lens 5 and the electromagnetic reduction lens 6. A two shaping aperture 12 is arranged.

Of these, the first shaping aperture 11 is formed in a square shape, and the second shaping aperture 12 is formed in an arrow shape. The electromagnetic illuminating device 3 makes the electron beam emitted from the electron gun 2 a uniform illumination beam, and the blanking electrode 4 controls on / off of the electron beam.

The electromagnetic projection lens 5 projects the electron beam formed by the first shaping aperture 11 onto the second shaping aperture 12, and at this time, the shaping deflector 8 is
For example, the irradiation position of the electron beam with respect to the second shaping aperture 12 is controlled so that the irradiation shape and the irradiation area of the electron beam according to the CAD data of the inspection pattern are controlled, and the beam shape is rectangular or triangular. There is.

Electromagnetic reduction lens 6 and electromagnetic objective lens 7
Is for reducing and projecting the electron beam shaped by the second shaping aperture 12 onto the inspection sample 13 such as a mask. At this time, the main deflector 9 transmits the electron beam to the inspection sample 13
Of the sub-deflector 1 controlled within the frame which is the inspection irradiation area of
The position 0 controls the position of the inspection range obtained by subdividing the frame.

A chamber 14 is provided below the electron beam scanning main body 1. This chamber 14 is a vibration isolation table 1
5, and an XY stage 16 is arranged therein.

The XY stage 16 includes a cassette 17
Is provided, and the inspection sample 13 is set in the cassette 17. The XY stage 16 is subjected to positioning control on the XY plane by an XY stage control device 18 provided outside the chamber 14. In this positioning control, the position of the inspection sample 13 placed on the XY stage 16 is measured by the length measuring device 19, and this position data is X-positioned.
It is performed by being fed back to the Y stage control device 18.

An electron detector 20 is arranged in the chamber 14 above the cassette 17. The electron detector 20 detects reflected electrons or secondary electrons generated when the inspection sample 13 is irradiated with an electron beam. Whether to select backscattered electrons or secondary electrons is determined by the material of the inspection sample 13. For example, when the inspection sample 13 has a quartz base and a pattern of chrome, such as a mask of an exposure apparatus, the reflection is reflected. It will detect electrons.

The Z sensor 21 measures the surface height of the inspection sample 13 for controlling the beam focus.
On the other hand, a drawing data memory 31, a terminal device 32, a pattern data generator 33, a pattern inspection / determination device 34, a beam controller 35, and an XY stage controller 18 are connected to the main controller 30.

The pattern data generator 33 generates the shape of the inspection pattern and its range data based on the CAD data of the inspection pattern from the main controller 30, and sends it to the pattern inspection / determination device 34 and the beam controller 35. It has a function.

The beam control device 35 receives the shape of the inspection pattern, its range data and the like, and receives the electromagnetic illumination device 3,
The exciting current flowing through the blanking electrode 4, the electromagnetic projection lens 5, the electromagnetic reduction lens 6, the shaping deflector 8, the main deflector 9, and the sub-deflector 10 is controlled to shape the electron beam according to the inspection pattern shape. It also has a function of scanning and controlling the electron beam within the range of the inspection pattern.

The pattern inspection / determination device 34 receives the shape of the inspection pattern and its range data from the pattern data generator 33, and detects the set beam irradiation area and the set irradiation energy by this data and the electronic detector 20. It has a function of comparing with the electron amount data and determining the presence or absence of a pattern defect in the inspection sample 13 and the size (area) of the pattern defect.

Specifically, the pattern inspection / determination device 34 is
A function as a rotation deviation detecting means for detecting the rotation deviation amount of the actual beam irradiation position when the electron beam is irradiated on the inspection sample 13, the rotation deviation amount, the electron beam irradiation shape, and the like based on the set beam irradiation position. It has a function as a determination means for determining the actual beam irradiation position displacement area and comparing the displacement area with the set allowable defect area to determine the pattern shape.

This determination means is such that the irradiation area of the electron beam is Ds, the irradiation energy per unit area is E, and the electron detection sensitivity according to the material characteristics per unit irradiation area and unit irradiation energy is Gchrome for chrome pattern and Gchrome for quartz. Gqu
artz, the occupancy of the chrome pattern in the irradiation area is α,
When the occupancy rate of the pattern omission in the irradiation area is β and the occupancy rate of the irradiation shift area in the irradiation area is γ, the detected value Dd of the charged particle Dd = α · Gchrome · E · Ds + (β + γ) Gquartz · E · Ds ... (1) It has a function of obtaining (α + β + γ = 1, α, β, γ ≧ 0) and determining the pattern shape based on the detected value Dd and the electron beam irradiation shape.

Next, the operation of the apparatus configured as described above will be described in the case where a mask is used as the inspection sample 13. First, before the inspection, the same material as the inspection sample 13 is used, and the electron detection sensitivity of the electron detector 20 by the inspection sample material, the deflection sensitivity and the irradiation amount using the deflection cavitation pattern previously installed on the XY stage 16. Etc. are calibrated.

After that, the inspection sample 13 is set in the cassette 17, and in this state, the alignment mark on the surface of the inspection sample 13 is recognized by an optical camera and an image processing device (not shown).

By recognizing the alignment mark, the inspection sample 13 is rotationally adjusted by the rotational alignment device (not shown) together with the cassette 17 with reference to the XY axis directions of the XY stage 16.

Next, the inspection sample 13 together with the cassette 17 is transferred to the chamber 1 by a measurement sample transfer device (not shown).
4 and is mounted on the XY stage 16. Next, the XY stage 16 moves the alignment mark of the inspection sample 13 under the irradiation of the electron beam under the control of the XY stage controller 18.

After this movement, an electron beam is emitted from the electron gun 2. The electron beam is scanned on the alignment mark by controlling the exciting current to the electromagnetic projection lens 5, the electromagnetic reduction lens 6, the shaping deflector 8, the main deflector 9, and the sub-deflector 10 by the beam controller 35.

When the charged particles generated on the inspection sample 13 are detected by the electron detector 20 during this electron beam scanning,
The pattern inspection / determination device 34 receives the electron amount data of the electron detector 20 and detects the position of the alignment mark.

The rotation direction was previously adjusted by a method using an optical camera. However, this has a large position reading error due to optical detection, and there is a limit to the mechanical adjustment of the rotation direction. That is, since the conveyance is performed again after the rotation adjustment, the adjustment deviation occurs, and the rotation alignment accuracy is ± several degrees.

Therefore, when a plurality of alignment marks are detected by electron beam scanning, as shown in FIG. 2, the sample coordinate system (wafer coordinate system) and the deflection coordinate system (stage coordinate system).
Does not match, and Δ in the XY axis direction and in the rotation direction
Differences occur among x, Δy, and Δθ.

Of these differences, the differences Δx and Δy in the XY axis directions.
Can be corrected by adjusting the amount of deflection by the deflectors 9 and 10. However, since the shape of the electron beam with which the inspection sample 13 is irradiated as an inspection is rectangular or triangular, it is impossible to correct the difference Δθ.

Therefore, the set beam irradiation position and the actual electron beam irradiation position can be made to coincide with each other at one point in the XY directions as shown in FIG.
Cannot be corrected.

Therefore, if the set beam irradiation area and its set irradiation energy are simply compared with the electron amount data detected by the electron detector 20, the inspection accuracy is lowered, and therefore the inspection is performed by the following method.

In the pattern inspection, the electron beam emitted from the electron gun 2 is made into a uniform illumination beam by the electromagnetic illumination device 3 and is applied to the first shaping aperture 11, where it is shaped into a square beam.

The shaped electron beam is projected onto the second shaping aperture 12 by the electromagnetic projection lens 5. At this time, the electron beam irradiation position on the second shaping aperture 12 is controlled by the shaping deflector 8 so that the electron beam has an irradiation shape and an irradiation area of the electron beam according to the CAD data of the inspection pattern, for example.

The electron beam shaped into a rectangle or triangle by the second shaping aperture 12 is reduced and projected onto the inspection sample 13 by the electromagnetic reduction lens 6 and the electromagnetic objective lens 7.

At this time, the electron beam is controlled by the main deflector 9 into a frame which is an inspection irradiation region of the inspection sample 13, and at the same time, the sub-deflector 10 positions the electron beam with respect to the inspection range in which the frame is subdivided. Controlled.

When the inspection sample 13 is irradiated with the electron beam and scanned as described above, reflected electrons or secondary electrons are generated in the inspection sample 13. The electron detector 20 detects the reflected electrons or secondary electrons and outputs the electron quantity data. In this case, the selection of backscattered electrons or secondary electrons is determined by the material of the inspection sample 13 as described above.

The pattern inspection / judgment device 34 receives the electron amount data from the electron detector 20 when the alignment mark of the inspection sample 13 is irradiated with the electron beam, and receives the rotation deviation of the actual beam irradiation position from the set beam irradiation position. The quantity θ is detected.

Next, the pattern inspecting / determining device 34 uses the following relationship based on the detected value Dd of the charged particles shown in the above equation (1), β + γ = Gchrome / g-Dd / gE · Ds (2) (g = Gchrome-Gquartz), and the pass / fail of the pattern defect is performed based on this value according to each inspection pattern shape.

First, when the electron beam irradiation shape is a rectangle and is isolated, as shown in FIG. 4, if the length of each side of the rectangle is 1 and m and the rotation deviation amount is θ, the inspection pattern The deviation area of the irradiation beam is (l ² + m ² ) θ / 2. At this time, γ = (1 / Ds) (l ² + m ² ) θ / 2 (3)

Therefore, the pattern missing defect area Mkw is β
· Ds So, this pattern missing relationship between the defect area MKW a set allowable defect area Ms is, Mkw = Gchrome · Ds / g -Dd / g · E- (l 2 + m 2) θ / 2 <Ms ... (4) If so, it is determined that there is no defect in the pattern shape (pass).

Secondly, when the electron beam irradiation shape is isolated by an isosceles right triangle, if the length of each side sandwiching the right angle is m and the rotation deviation amount is θ, the inspection is performed. The displaced area of the pattern irradiation beam is m ² · θ.

Therefore, if the relationship between the pattern missing defect area Mkw and the set allowable defect area Ms is Mkw = Gchrome · Ds / g−Dd / g · E−m ² · θ <Ms (5), the defect It is determined that there is no pattern shape (pass).

Third, when the electron beam irradiation shape is a rectangle in a continuous pattern and the length of each side of the rectangle is 1 and m and the rotation deviation amount is θ as shown in FIG. 6, the inspection pattern irradiation is performed. Beam deviation area is m ² · θ / 2, or l ² · θ
/ 2.

[0054] Therefore, the relationship between the pattern missing defect area MKW a set allowable defect area Ms is, Mkw = Gchrome · Ds / g -Dd / g · E-m 2 · θ / 2 <Ms ... (6) or, MKW = Gchrome · Ds / g−Dd / g · E-1 ² · θ / 2 <Ms (7), it is determined that there is no defect pattern shape (pass).

Fourthly, when the electron beam shift region in the continuous pattern does not overlap the quartz pattern but overlaps the adjacent chrome pattern, the relationship between the pattern defect area Mkw and the set allowable defect area Ms is Mkw = Gchrome.multidot. If Ds / g-Dd / g · E <Ms (8), it is determined that there is no defect pattern shape (pass).

Thus, in each case, the relationship between the pattern missing defect area Mkw and the set allowable defect area Ms is compared,
If the pattern missing defect area Mkw is larger than the set allowable defect area Ms, it is determined that a defect exists.

When it is determined that there is a defect, the pattern inspection / determination device 34 obtains the defect position coordinates and the defect area Mkw, externally displays them, and stores them in the internal memory. The above defect inspection is performed on the entire area of the inspection sample 13.

As described above, in the above-described embodiment, the rotation deviation amount θ of the actual beam irradiation position with respect to the set beam irradiation position is detected, and the pattern skip is performed based on the rotation deviation amount θ and the electron beam irradiation shape such as a rectangle. Since the pattern shape is determined by comparing the relationship between the defect area Mkw and the set allowable defect area Ms, the pattern shape can be inspected at high speed and with high accuracy even if the beam irradiation position is misaligned.

That is, in the above-described embodiment, since complicated processing such as image processing is not required, pattern defect determination can be performed at high speed, and no loss time occurs during measurement. Further, since the electron beam having the same shape as the inspection pattern is irradiated, the inspection speed can be increased several times. For example, in the case of the 16MDRAM class, the inspection time of about 2 minutes is required in the optical type and the circular electron beam method, but the inspection time of about 30 minutes is sufficient in this embodiment.

When the inspection is performed, the inspection sample 13 is positioned in the rotation direction. However, even if the positioning accuracy is lower than the defect detection accuracy, the rotation error is corrected, so that the defect pass / fail determination can be performed with high accuracy. it can. When the defect detection accuracy may be low, the adjustment function for the rotation direction is not necessary. Moreover, since the CAD system can be used as it is for mask drawing, it can be used as it is as a drawing apparatus.

[0061]

As described in detail above, according to the present invention, it is possible to provide a pattern inspection apparatus capable of inspecting a pattern shape efficiently, at high speed and with high accuracy.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an embodiment of a pattern inspection apparatus according to the present invention.

FIG. 2 is a diagram showing respective differences in an XY axis direction and a rotation direction in a sample coordinate system and a deflection coordinate system.

FIG. 3 is a diagram showing a difference in a rotation direction between a set beam irradiation position and an actual electron beam irradiation position.

FIG. 4 is a diagram showing the operation of defect inspection when the electron beam irradiation shape is rectangular and isolated.

FIG. 5 is a diagram showing the operation of defect inspection when the electron beam irradiation shape is isolated by a right-angled isosceles triangle.

FIG. 6 is a diagram showing an operation of defect inspection in the case where the electron beam irradiation shape is a rectangle in a continuous pattern.

[Explanation of symbols]

2 ... Electron gun, 5 ... Electromagnetic projection lens, 6 ... Electromagnetic reduction lens, 7 ... Electromagnetic objective lens, 8 ... Molding deflector, 9 ... Main deflector, 10 ... Sub deflector, 11 ... First shaping aperture, 12
... second molding aperture, 13 ... inspection sample, 14 ... chamber, 16 ... XY stage, 18 ... XY stage controller, 19 ... length measuring device, 20 ... electronic detector, 30 ... main controller, 33 ... pattern data generation Device, 34 ... Pattern inspection / determination device, 35 ... Beam control device.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hidetoshi Kinoshita 33 Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Within the Institute of Industrial Science, Toshiba Corporation (72) Yuji Fukudome 33, Isogo-cho, Isogo-ku, Yokohama, Kanagawa Banchi Co., Ltd.Toshiba Production Engineering Laboratory

Claims (6)

[Claims] 1. A pattern inspection apparatus for detecting charged particles generated when an inspection sample is irradiated with an electron beam to inspect a pattern shape of the inspection sample, wherein a set beam irradiation position determined by data of the inspection sample is set. On the other hand, a rotation deviation detecting means for detecting the rotation deviation amount of the actual beam irradiation position when the electron beam is applied to the inspection sample, and the rotation deviation detecting means based on at least the detected rotation deviation amount and the electron beam irradiation shape. A pattern inspection comprising: a determining unit that determines a displacement area of the actual beam irradiation position with respect to a setting beam irradiation position, and compares the displacement area with a setting allowable defect area to determine a pattern shape. apparatus. 2. The determination means determines the irradiation area of the electron beam by D
s, the irradiation energy per unit area is E, the electron detection sensitivity according to the material characteristics per unit irradiation area and unit irradiation energy is Gchrome for chrome pattern and Gquar for quartz.
tz, occupancy of the chromium pattern in the irradiation region is α, occupancy of the pattern omission in the irradiation region is β, and occupancy of the irradiation deviation region in the irradiation region is γ, the detected value Dd of the charged particle Dd = αGchrome 2. The pattern inspection apparatus according to claim 1, wherein E * Ds + ([beta] + [gamma]) quartz * E * Ds is obtained, and the pattern shape is determined based on the detected value Dd and the electron beam irradiation shape. 3. The determining means, when the electron beam irradiation shape is a rectangle, has a pattern missing defect area Mkw and a set allowable defect area Ms when the lengths l and m of each side of the rectangle and the rotation deviation amount θ.
If the relation with Mkw = Gchrome · Ds / g−Dd / g · E− (l ² + m ² ) θ / 2 <Ms (g = Gchrome−Gquartz), it is determined that there is no defect pattern shape. The pattern inspection device according to claim 2. 4. When the electron beam irradiation shape is a right-angled isosceles triangle, the determining means determines the pattern missing defect area Mkw and the set allowable defect area Ms when the length m of each side sandwiching the right angle and the rotation deviation amount θ. If the relationship is Mkw = Gchrome · Ds / g−Dd / g · E−m ² · θ <Ms (g = Gchrome-Gquartz), it is determined that the pattern shape has no defect. The described pattern inspection device. 5. The determination means, when the electron beam irradiation shape is a rectangle in a continuous pattern, the lengths l, m of each side of the rectangle,
When the rotation deviation amount is θ, the relationship between the pattern missing defect area Mkw and the set allowable defect area Ms is as follows: Mkw = Gchrome · Ds / g−Dd / g · E−m ² · θ / 2 <Ms or Mkw = Gchrome · The pattern inspection apparatus according to claim 2, wherein if Ds / g-Dd / g · E-1 ² · θ / 2 <Ms (g = Gchrome-Gquartz), the pattern shape is determined to have no defect. . 6. The determination means determines that the relationship between the pattern defect area Mkw and the set allowable defect area Ms is Mkw = when the electron beam shift region in the continuous pattern does not overlap the quartz pattern but overlaps the adjacent chrome pattern. The pattern inspection apparatus according to claim 2, wherein if Gchrome · Ds / g−Dd / g · E <Ms (g = Gchrome−Gquartz), the pattern shape is determined to have no defect.