JPH0388792A - Quartz crucible for pulling up silicon single crystal and its production - Google Patents
Quartz crucible for pulling up silicon single crystal and its productionInfo
- Publication number
- JPH0388792A JPH0388792A JP22156689A JP22156689A JPH0388792A JP H0388792 A JPH0388792 A JP H0388792A JP 22156689 A JP22156689 A JP 22156689A JP 22156689 A JP22156689 A JP 22156689A JP H0388792 A JPH0388792 A JP H0388792A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- wall
- single crystal
- quartz
- quartz powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 15
- 229910052710 silicon Inorganic materials 0.000 title claims description 15
- 239000010703 silicon Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000843 powder Substances 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体として用いられるシリコン単結晶の引上
げ用石英ルツボおよびその仕上げ方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a quartz crucible for pulling silicon single crystals used as semiconductors and a finishing method thereof.
チョクラルスキー(CZ)法による半導体用シリコン単
結晶の引上げは原料シリコンを石英ルツボ中で溶融して
行う。現在石英ルツボは一般に回転モールディング法で
つくられる。回転モールディング法では石英粉をルツボ
状に堆積した後、内側から加熱溶融して内周壁が透明な
ガラス状の石英ルツボとする。一方、ルツボの外壁部は
モールドからルツボを取出し易いようにその最外層が僅
く薄く不透明な未溶融石英粉の状態のままに保たれろ。Pulling of silicon single crystals for semiconductors by the Czochralski (CZ) method is carried out by melting raw silicon in a quartz crucible. Currently, quartz crucibles are generally manufactured using a rotary molding method. In the rotary molding method, quartz powder is deposited in a crucible shape and then heated and melted from the inside to form a glass-like quartz crucible with a transparent inner wall. On the other hand, the outermost layer of the outer wall of the crucible should be kept in a slightly thin, opaque state of unfused quartz powder so that the crucible can be easily removed from the mold.
然し乍らこれらの未溶融石英粉が多量に残留すると、シ
リコン単結晶を引上げる際に飛散したものがシリコンと
反応して一酸化ケイ素(Sj、0)の蒸気を生成し、ル
ツボ上縁部で凝結してシリコン囃結晶中に混入したり、
或は石英粉がそのまま単結晶に混入するなど、シリコン
の単結晶化歩留りを低下させる原因となる。However, if a large amount of these unfused quartz powder remains, the particles scattered when pulling the silicon single crystal react with the silicon to generate silicon monoxide (Sj, 0) vapor, which condenses at the upper edge of the crucible. and get mixed into silicon crystals,
Alternatively, the quartz powder may be mixed into the single crystal as it is, causing a decrease in the silicon single crystallization yield.
従来はルツボの外壁部をファイアポリッシュまたは砥石
で研削することにより、外壁部に残留した未溶融石英粉
を除去しているが、研削の手間が極めて煩雑でありまた
研削の効果も必ずしも十分でない。従って前記の単結晶
化歩留りの向上に限界がある。なお、金属ブラシによっ
て研磨すると。Conventionally, the unfused quartz powder remaining on the outer wall of the crucible is removed by fire polishing or grinding with a grindstone, but the grinding process is extremely troublesome and the effect of the grinding is not always sufficient. Therefore, there is a limit to the improvement in the single crystallization yield. In addition, if you polish it with a metal brush.
未溶融石英粉は殆ど除去できるものの、ルツボ外表面に
傷を生じ易く、また金属粉が不純物として付着するので
好ましくない。Although most of the unfused quartz powder can be removed, it is undesirable because it tends to cause scratches on the outer surface of the crucible and metal powder adheres as impurities.
本発明において、ルツボの外壁部に高圧水を吹きつける
ことにより、付着した未溶融石英粉を効果的に除去する
ことができることが見出だされた。In the present invention, it has been found that adhering unfused quartz powder can be effectively removed by spraying high-pressure water onto the outer wall of the crucible.
本発明は、ルツボ外壁部に高圧水を吹きつけて付着した
未溶融石英粉を除去することからなるシリコン単結晶引
上げ用石英ルツボの仕上げ方法およびこの方法で製造さ
れたシリコン単結晶引上げ用石英ルツボを提供する。The present invention provides a finishing method for a quartz crucible for pulling silicon single crystals, which comprises spraying high-pressure water on the outer wall of the crucible to remove adhering unfused quartz powder, and a quartz crucible for pulling silicon single crystals produced by this method. I will provide a.
回転モールディング法で製作した石英ルツボは前記のよ
うに外壁部に未溶融石英粉が付着している。本発明はこ
れらの未溶融石英粉を外部から高圧水を吹きつけて除去
する。用いる高圧水の圧力は250〜400kg/aJ
が好ましく、280〜300kg/aJが一層好ましい
、 250kg/cd以下では残留する未溶融石英粉末
の除去に要する時間が長くなり、かつその除去も十分で
ない。また400kg/aJを超えると外周縁が破損さ
れる虞れが生ずるので好ましくない。As mentioned above, unfused quartz powder adheres to the outer wall of the quartz crucible manufactured by the rotary molding method. In the present invention, these unfused quartz powders are removed by spraying high-pressure water from the outside. The pressure of high pressure water used is 250 to 400 kg/aJ
is preferable, and 280 to 300 kg/aJ is more preferable. If it is less than 250 kg/cd, the time required to remove the remaining unfused quartz powder will be long and the removal will not be sufficient. Moreover, if it exceeds 400 kg/aJ, there is a risk that the outer peripheral edge will be damaged, which is not preferable.
ルツボの外壁部に高圧水を吹きつけるには種々な方法が
あるが、好ましい一態様としては例えば回転する軸上に
取付けられた台の上にルツボを載置し、ルツボを回転さ
せながら、ルツボ側面に設置した上下動可能なノズルか
らルツボに向けて高圧水を噴出させ、ルツボの外壁部に
吹きつける。There are various methods for spraying high-pressure water onto the outer wall of the crucible, but one preferred method is to place the crucible on a stand mounted on a rotating shaft, and while rotating the crucible, High-pressure water is jetted toward the crucible from a vertically movable nozzle installed on the side, spraying it against the outer wall of the crucible.
ルツボの回転やノズルの上下動はモーター等の機械的動
力を用いてもよくまた手動で行ってもよい。The rotation of the crucible and the vertical movement of the nozzle may be performed using mechanical power such as a motor, or may be performed manually.
吹きつけられた水は除去した石英粉と共に台の下部に設
置された水受は容器ないし樋などを介して外部に排出す
ればよい。The sprayed water and the removed quartz powder may be discharged to the outside through a container or a gutter from a water receiver installed at the bottom of the stand.
本発明の仕上方法を用いてつくられた石英ルツボはその
外壁部に残留する未溶融石英粉の量が従来のルツボに比
較して大福に少ない。このルツボを用いてシリコン単結
晶を引上げた場合の単結晶化歩留りは70%以上であり
、従来の砥石等で研削したルツボを用いた場合に較べ、
単結晶化歩留りが向上する。The amount of unfused quartz powder remaining on the outer wall of the quartz crucible made using the finishing method of the present invention is significantly smaller than that of conventional crucibles. When silicon single crystals are pulled using this crucible, the single crystallization yield is over 70%, compared to using a crucible ground with a conventional grindstone.
Single crystallization yield is improved.
以下実施例および比較例により本発明を具体的に説明す
る。The present invention will be specifically explained below using Examples and Comparative Examples.
実施例
回転モールディング法でつくられたシリコン単結晶引上
げ用石英ルツボを回転台に載置し、該ルツボを回転させ
ながら、ルツボ側面に設置し、た上下動可能なノズルか
ら300kg/a#の高圧水をルツボの外壁部に吹きつ
けて付着残留する未溶融石英粉を除去した。ルツボ外壁
の全面に亘って高圧水を5分間吹きつけた後ルツボ外壁
部に残留付着する未溶融石英粉の量を測定したところ4
.5gであった。Example A quartz crucible for pulling silicon single crystals made by the rotary molding method was placed on a rotating table, and while the crucible was being rotated, a high pressure of 300 kg/a# was applied from a nozzle installed on the side of the crucible that could move up and down. Water was sprayed onto the outer wall of the crucible to remove the remaining unfused quartz powder. After spraying high-pressure water over the entire surface of the outer wall of the crucible for 5 minutes, we measured the amount of unfused quartz powder remaining on the outer wall of the crucible.4
.. It was 5g.
なお、未溶融石英粉の残留量は高圧水処理後、ルツボ全
体の重量を測定し、更に金属ブラシでルツボ表面を研磨
した後に再びルツボ全体の重量を測定し、その差により
求めた。このルツボを用いてシリコン単結晶を引上げた
結果、73%の単結晶化歩留りが得られた(表)。The amount of residual unfused quartz powder was determined by measuring the weight of the entire crucible after high-pressure water treatment, and then polishing the surface of the crucible with a metal brush, measuring the weight of the entire crucible again, and determining the difference between the two. As a result of pulling a silicon single crystal using this crucible, a single crystallization yield of 73% was obtained (Table).
比較例1〜2
実施例と同一条件の回転モールディング法でつくられた
石英ルツボについて、従来のように砥石を用いて未溶融
石英粉を除去した石英ルツボを用い、実施例と同一条件
でSi単結晶を引上げた場合を比較例1とし、実施例と
同様の装置で200kg/a#の圧力水を15分間吹き
つけた石英ルツボを用い、実施例と同一条件で Si単
結晶を引上げた場合を比較例2とし、実施例と同様な測
定を行なった。Comparative Examples 1 to 2 A quartz crucible made by the rotary molding method under the same conditions as the example was used to remove unfused quartz powder using a grindstone as in the past, and Si monomer was made under the same conditions as the example. Comparative Example 1 is a case in which a crystal is pulled, and a case in which a Si single crystal is pulled under the same conditions as in the example using a quartz crucible sprayed with 200 kg/a# pressure water for 15 minutes using the same equipment as in the example. Comparative Example 2 was prepared and the same measurements as in the example were carried out.
この結果を次表に示す。The results are shown in the table below.
表
表において単結晶化歩留りの評価は、070%以−E、
Δ65〜70%、×65%以下である。In the table, the evaluation of single crystallization yield is 070% or more -E,
Δ65-70%, ×65% or less.
Claims (1)
石英粉を除去することからなるシリコン単結晶引上げ用
石英ルツボの製造方法。 2、第1請求項の方法で製造されたシリコン単結晶引上
げ用石英ルツボ。[Claims] 1. A method for producing a quartz crucible for pulling silicon single crystals, which comprises spraying high-pressure water on the outer wall of the crucible to remove adhering unfused quartz powder. 2. A quartz crucible for pulling silicon single crystals produced by the method of claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221566A JPH0816039B2 (en) | 1989-08-30 | 1989-08-30 | Manufacturing method of quartz crucible for pulling silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1221566A JPH0816039B2 (en) | 1989-08-30 | 1989-08-30 | Manufacturing method of quartz crucible for pulling silicon single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0388792A true JPH0388792A (en) | 1991-04-15 |
JPH0816039B2 JPH0816039B2 (en) | 1996-02-21 |
Family
ID=16768740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1221566A Expired - Lifetime JPH0816039B2 (en) | 1989-08-30 | 1989-08-30 | Manufacturing method of quartz crucible for pulling silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0816039B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005239533A (en) * | 2004-08-06 | 2005-09-08 | Shinetsu Quartz Prod Co Ltd | Quartz glass crucible for pulling silicon single crystal, and method for manufacturing the same |
US20100132609A1 (en) * | 2007-05-31 | 2010-06-03 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same |
JP2010202515A (en) * | 2010-06-21 | 2010-09-16 | Shinetsu Quartz Prod Co Ltd | Method for producing quartz glass crucible for pulling up silicon single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6212692A (en) * | 1985-07-10 | 1987-01-21 | Fujitsu Ltd | Method for growing single crystal semiconductor |
JPS62162267U (en) * | 1986-03-31 | 1987-10-15 |
-
1989
- 1989-08-30 JP JP1221566A patent/JPH0816039B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6212692A (en) * | 1985-07-10 | 1987-01-21 | Fujitsu Ltd | Method for growing single crystal semiconductor |
JPS62162267U (en) * | 1986-03-31 | 1987-10-15 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005239533A (en) * | 2004-08-06 | 2005-09-08 | Shinetsu Quartz Prod Co Ltd | Quartz glass crucible for pulling silicon single crystal, and method for manufacturing the same |
JP4641760B2 (en) * | 2004-08-06 | 2011-03-02 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystals |
US20100132609A1 (en) * | 2007-05-31 | 2010-06-03 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same |
US8555674B2 (en) * | 2007-05-31 | 2013-10-15 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same |
JP2010202515A (en) * | 2010-06-21 | 2010-09-16 | Shinetsu Quartz Prod Co Ltd | Method for producing quartz glass crucible for pulling up silicon single crystal |
Also Published As
Publication number | Publication date |
---|---|
JPH0816039B2 (en) | 1996-02-21 |
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