JPH038327A - Ice scrubber - Google Patents
Ice scrubberInfo
- Publication number
- JPH038327A JPH038327A JP14206889A JP14206889A JPH038327A JP H038327 A JPH038327 A JP H038327A JP 14206889 A JP14206889 A JP 14206889A JP 14206889 A JP14206889 A JP 14206889A JP H038327 A JPH038327 A JP H038327A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ion
- amount
- atmosphere
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000012544 monitoring process Methods 0.000 claims abstract description 3
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000000428 dust Substances 0.000 abstract description 10
- 239000007921 spray Substances 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract description 5
- 238000007667 floating Methods 0.000 abstract description 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000011882 ultra-fine particle Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000015243 ice cream Nutrition 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体・電子デバイス等の電子部材の製造
工程における表面精密洗浄・表面改質レジスト除去・エ
ツチングなどの処理工程に供されるアイススクラバ装置
に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to ice creams used in processing steps such as surface precision cleaning, surface modification resist removal, and etching in the manufacturing process of electronic components such as semiconductors and electronic devices. The present invention relates to a scrubber device.
第3図は、例えば特開昭61−70281号公報に示さ
れた従来のアイススクラバ装置の概略図であり、図にお
いて、断熱容器(1)に取り付けられたスプレーノズル
(2)に液体供給源(3)が接続されている。断熱容器
(1)の下端には噴射ノズル(4)が接続されている。FIG. 3 is a schematic diagram of a conventional ice scrubber device disclosed in, for example, Japanese Patent Application Laid-Open No. 61-70281. In the figure, a liquid supply source is connected to a spray nozzle (2) attached to an insulated container (1) (3) is connected. A spray nozzle (4) is connected to the lower end of the heat insulating container (1).
この噴射ノズル(4)およびスプレーノズル(2)には
高圧ガスボンベ(5)が接続されている。(6)は噴射
ノズル(4)に一定の距離で対向したウェハ等の被処理
物で、噴射ノズル(4)を組み込んだ処理容器(7)内
に配置されている。A high pressure gas cylinder (5) is connected to the injection nozzle (4) and the spray nozzle (2). (6) is an object to be processed, such as a wafer, which faces the injection nozzle (4) at a certain distance, and is placed in a processing container (7) incorporating the injection nozzle (4).
以上の構成により、液体供給源(3)から供給された液
体は高圧ガスボンベ(5)からのガス圧により、スプレ
ーノズル(2)より霧状になって断熱容器<1)内に噴
霧される。この際、断熱容器(1)は液体窒素等で冷却
されているため霧状液滴は氷結し、数十ミクロン径の微
粒氷(8)が生成する。この微粒氷(8)は高圧ガスボ
ンベ(5)からのガス圧によって噴射ノズル(4)から
対向して置かれたウェハ(6)に吹き付けられ、このウ
ェハ〈6)表面ノ洗浄・加工等の処理が行われる。With the above configuration, the liquid supplied from the liquid supply source (3) is atomized into the atomized container <1) by the spray nozzle (2) due to the gas pressure from the high-pressure gas cylinder (5). At this time, since the heat insulating container (1) is cooled with liquid nitrogen or the like, the mist droplets freeze, and fine ice particles (8) with a diameter of several tens of microns are generated. This fine ice (8) is sprayed from a jet nozzle (4) by gas pressure from a high-pressure gas cylinder (5) onto a wafer (6) placed oppositely, and the surface of this wafer (6) is subjected to cleaning, processing, etc. will be held.
従来のアイススクラバ装置は以上のように楕或されてい
るので、微粒氷が乾燥気体中でノズルを高圧・高速で通
過する際、微粒氷エアロゾルが帯電し、ウェハ等に噴射
した際にウェハを正または負の一方の極に帯電させる。Conventional ice scrubber devices have an oval shape as described above, so when the fine ice particles pass through the nozzle at high pressure and high speed in dry gas, the fine ice aerosol becomes electrically charged, and when it is sprayed onto the wafer etc., the wafer is Charge to either positive or negative polarity.
この際、処理室内の雰囲気中にある反対の極に、帯電し
たダストをウェハが引き付け、ダストがウェハに付着し
、表面汚染を引き起こすという問題があった。At this time, there is a problem in that the wafer attracts charged dust to the opposite pole in the atmosphere in the processing chamber, and the dust adheres to the wafer, causing surface contamination.
この発明は上記のような問題点を解消するためになされ
たもので、ウェハ表面の帯電を抑え、ウェハ等にダスト
が付着するのを防止するアイススクラバ装置を得ること
を目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide an ice scrubber device that suppresses charging on the wafer surface and prevents dust from adhering to the wafer or the like.
この発明に係るアイススクラバ装置は、微粒氷を噴出す
る処理容器内にイオンシャワー発生器を設けるとともに
イオン量をモニターし、容器内のイオン量を耐えず制御
する手段を設けたものである。The ice scrubber device according to the present invention is provided with an ion shower generator in a processing container that spouts out fine ice, and also with means for monitoring the amount of ions and controlling the amount of ions in the container.
この発明においては、超微粉氷を噴射する処理容器内の
正極および負極のイオン量を同数に保つことにより、ウ
ェハ等の帯電を抑え、雰囲気中のダストをウェハが電気
的に誘引するのを防ぐ。また、雰囲気中のイオン量は経
時的に大きく変動するため、これを連続的にモニタリン
グし、リアルタイムでイオンシャワー発生器の出力を制
御し、常にIk適のイオン状態を維持する。In this invention, by maintaining the same number of ions in the positive and negative electrodes in the processing container that injects ultrafine ice powder, charging of the wafer, etc. is suppressed, and the wafer is prevented from electrically attracting dust in the atmosphere. . Furthermore, since the amount of ions in the atmosphere fluctuates greatly over time, this is continuously monitored and the output of the ion shower generator is controlled in real time to constantly maintain an ion state suitable for Ik.
第1図、第2図はこの発明の一実施例を示し、第1図に
おいて、静電キャパシタ形電極(9)が処理容器(7)
の雰囲気中に設置されている。この電極(9)には導電
線により微小電流計(10)が接続され、この微小電流
計(10)には出力可変器(11)、さらに処理容器内
のイオンシャワー発生器(12)が接続されている。FIGS. 1 and 2 show an embodiment of the present invention. In FIG. 1, an electrostatic capacitor type electrode (9) is connected to a processing vessel (7).
It is set in an atmosphere of A micro-ammeter (10) is connected to this electrode (9) by a conductive wire, and an output variable device (11) and an ion shower generator (12) in the processing container are connected to this micro-ammeter (10). has been done.
その他、第3図におけると同一符号は同一部分を示して
いる。In addition, the same reference numerals as in FIG. 3 indicate the same parts.
次にこの実施例の作用、動作について述べる。Next, the function and operation of this embodiment will be described.
微粒氷の発生およびウェハ等への吹き付けについては前
述した従来装置と同様である。ここでは、処理容器(7
)内に設置された静電キャパシタ形電極(9)の一方は
処理容器(7)内界囲気中に浮遊する荷電粒子を集め、
他の一極はウェハ(6)と同電位となるように接続され
ているため、ウェハ(6)と雰囲気との電位差が微小電
流計(10)で計測される。出力可変器(11)はこの
微小電流値を受信してイオン量と極性を認識し、正また
は負のイオン量がある許容値を越えた場合、その程度に
応じてイオンシャワー発生器(12)にイオン発生量調
整のための出力信号を送る。イオン発生器(12)はこ
の信号によって制御された出力で、かつ、不足している
極性のイオンを発生する。この作用により、処理容器(
7)とウェハ等(6)の電位差を抑え、■静電気力によ
るダストとウェハ等の誘引を防ぐ、■雰囲気中のダスト
が帯電するのを防ぐことができる。Generation of fine ice particles and spraying onto wafers, etc. are the same as in the conventional apparatus described above. Here, the processing container (7
) One side of the electrostatic capacitor type electrode (9) installed in the processing container (7) collects charged particles floating in the inner atmosphere of the processing container (7).
Since the other pole is connected to have the same potential as the wafer (6), the potential difference between the wafer (6) and the atmosphere is measured by the microcurrent meter (10). The output variable device (11) receives this minute current value and recognizes the ion amount and polarity, and if the amount of positive or negative ions exceeds a certain tolerance value, the ion shower generator (12) is activated depending on the degree. sends an output signal to adjust the amount of ion generation. The ion generator (12) generates ions of the missing polarity with an output controlled by this signal. Due to this action, the processing container (
By suppressing the potential difference between 7) and the wafer, etc. (6), it is possible to 1) prevent dust from attracting the wafer, etc. due to electrostatic force, and 2) prevent dust in the atmosphere from being charged.
第2図に処理容器(7)内のイオン濃度とウェハ付着ダ
スト数の相関を示す。FIG. 2 shows the correlation between the ion concentration in the processing container (7) and the number of dust attached to the wafer.
以上のように、この発明によれば、微粒氷をウェハ等に
吹き付ける処理容器に静電キャパシタ形イオンモニタお
よびイオンシャワー発生器を設置し、イオンモニタの計
測値をイオンシャワー発生器の出力制御にフィードバッ
クするようにしたことにより、ウェハ表面にダストの付
着を低減する効果が得られる。As described above, according to the present invention, an electrostatic capacitor type ion monitor and an ion shower generator are installed in a processing container that sprays fine ice onto wafers, etc., and the measured values of the ion monitor are used to control the output of the ion shower generator. Feedback provides the effect of reducing dust adhesion to the wafer surface.
第1図はこの発明の一実施例の概略面断面図、第2図は
この実施例におけるイオン濃度と付着ダスト数特性線図
、第3図は従来のアイススクラバ装置の概略面断面図で
ある。
(4)・・噴射ノズル、(6)・・ウェハ等の被処理物
、(7)・・処理容器、(8) ・・微粒氷、(9)
・静電キャパシタ形電極、(10)・・微小電流計、(
11)・・出力可変器、(12)・・イオンシャワー発
生器。
なお、各図中、同一符号は同−又は相当部分を示す。Fig. 1 is a schematic cross-sectional view of an embodiment of the present invention, Fig. 2 is a characteristic diagram of ion concentration and number of attached dust in this embodiment, and Fig. 3 is a schematic cross-sectional view of a conventional ice scrubber device. . (4)...Injection nozzle, (6)...Workpiece such as wafer, (7)...Processing container, (8)...Fine ice, (9)
・Electrostatic capacitor type electrode, (10)...Micro ammeter, (
11)...Output variable device, (12)...Ion shower generator. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
が設けられている処理容器と、この処理容器内に配置さ
れているイオンシャワー発生器と前記被処理物表面の近
傍でイオン量をモニタして前記イオンシャワー発生器の
発生イオン量をフィードバック制御する制御手段とを備
えてなるアイススクラバ装置。A processing container equipped with an injection nozzle that injects and collides fine ice particles onto the surface of the processing object, an ion shower generator placed within the processing container, and monitoring the amount of ions near the surface of the processing object. and control means for feedback controlling the amount of ions generated by the ion shower generator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14206889A JPH038327A (en) | 1989-06-06 | 1989-06-06 | Ice scrubber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14206889A JPH038327A (en) | 1989-06-06 | 1989-06-06 | Ice scrubber |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH038327A true JPH038327A (en) | 1991-01-16 |
Family
ID=15306684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14206889A Pending JPH038327A (en) | 1989-06-06 | 1989-06-06 | Ice scrubber |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH038327A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196034A (en) * | 1990-07-31 | 1993-03-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer cleaning apparatus |
US5217925A (en) * | 1990-11-30 | 1993-06-08 | Taiyo Sanso Co., Ltd. | Apparatus and method for cleaning semiconductor wafers |
-
1989
- 1989-06-06 JP JP14206889A patent/JPH038327A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196034A (en) * | 1990-07-31 | 1993-03-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer cleaning apparatus |
US5217925A (en) * | 1990-11-30 | 1993-06-08 | Taiyo Sanso Co., Ltd. | Apparatus and method for cleaning semiconductor wafers |
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