JPH0383025A - Linbo3 optical switch - Google Patents
Linbo3 optical switchInfo
- Publication number
- JPH0383025A JPH0383025A JP22205089A JP22205089A JPH0383025A JP H0383025 A JPH0383025 A JP H0383025A JP 22205089 A JP22205089 A JP 22205089A JP 22205089 A JP22205089 A JP 22205089A JP H0383025 A JPH0383025 A JP H0383025A
- Authority
- JP
- Japan
- Prior art keywords
- linbo3
- optical switch
- electrification
- substrate
- metallic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract description 26
- 229910052737 gold Inorganic materials 0.000 abstract description 4
- 230000000284 resting effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はＬｉＮｂＯ３光スイ・ンチに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a LiNbO3 optical switch.
従来のＬｉＮｂＯ３光スィッチは、ＬｉＮｂＯ３基板の
片面にＴｉの選択拡散によってＴｉ導波路を形成し、光
スイッチング動作を可能ならしめる電極をＴｉ導波路上
もしくはその近傍に配設して構成されている。A conventional LiNbO3 optical switch is constructed by forming a Ti waveguide on one side of a LiNbO3 substrate by selectively diffusing Ti, and disposing an electrode on or near the Ti waveguide to enable optical switching operation.
上述した従来のＬｉＮｂＯ３光スィッチは、ＬｉＮｂＯ
５基板の強帯電性による帯電電荷を放電できる構造とな
っていないという欠点がある。The conventional LiNbO3 optical switch described above is made of LiNbO
There is a drawback in that the structure is not capable of discharging the electrical charge caused by the strongly charging property of the 5-substrate.
すなわち、Ｌ ｉ Ｎ ｂ Ｏｓは元来強誘電体であり
、帯電しやすい。特に光スイッチング動作を行なうため
にＴｉ導波路に電界をかけることが必要であるが、この
際の印加電圧によっても帯電してしまう程で、この帯電
電荷をいかにして放電させるかがＬｉＮｂＯ３光スィッ
チの特性にかかわってくる。That is, L i N b Os is originally a ferroelectric material and is easily charged. In particular, in order to perform an optical switching operation, it is necessary to apply an electric field to the Ti waveguide, but the applied voltage at this time also causes it to become charged, and the key to the LiNbO3 optical switch is how to discharge this charged charge. It is related to the characteristics of
また、ＬｉＮｂＯ３は高温状態、例えば５０℃程度の高
温状態でも帯電してしまうという欠点がある。Furthermore, LiNbO3 has the disadvantage that it is charged even at high temperatures, for example, at about 50°C.
帯電によって、ＬｉＮｂＯ３光スィッチは見かけ、Ｌ電
圧が印加された状態となり、光スイツチ特性が変化する
欠点がある。つまり、帯電強度にもよるが、尤スイッチ
の結合部がスイッチング電圧が印加したと同等となり、
所定のスイッチング電圧とは渓なる為、光出力ボートの
出力光低下、並びにクロストークの増加が発生し、Ｌｉ
Ｎｂ０゜光スィッチの特性が得られなくなる。ＬｉＮｂ
Ｏ３光ス了ツチの使用環境温度は、６０℃に達すること
も珍らしくなく、高温状態における帯電防止が必要とな
ってくる。Due to charging, the LiNbO3 optical switch appears to be in a state where the L voltage is applied, which has the disadvantage that the optical switch characteristics change. In other words, although it depends on the charging strength, the connection part of the switch becomes equivalent to when a switching voltage is applied.
Since the specified switching voltage is different from the specified switching voltage, a decrease in the output light of the optical output boat and an increase in crosstalk occur.
The characteristics of a Nb0° optical switch cannot be obtained. LiNb
It is not uncommon for the operating environment temperature of an O3 light switch to reach 60° C., making it necessary to prevent static electricity in high-temperature conditions.
本発明のＬｉＮｂＯ３光スィッチは、Ｌ ｉ Ｎ ｂ０
３基板の片面にＴｉを選択拡散してＴｉ導波路を形成し
光スイッチング動作を可能ならしめる電極を前記Ｔｉ導
波路もしくはその近傍に配設して成るＬｉＮｂＯ３光ス
ィッチにおいて、前記ＬｉＮｂＯ３基板の］゛ｉ導波路
を配設しない面に前記ＬｉＮｂＯ３基板に帯電した電荷
を地気に放電する金属膜を形成して成る構造を有する。The LiNbO3 optical switch of the present invention has L i N b0
3. In the LiNbO3 optical switch, the LiNbO3 optical switch is formed by selectively diffusing Ti on one side of the substrate to form a Ti waveguide, and an electrode for enabling optical switching operation is disposed at or near the Ti waveguide. It has a structure in which a metal film is formed on the surface on which the i-waveguide is not disposed, which discharges the charges accumulated on the LiNbO3 substrate to the ground.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明のＬｉＮｂＯ３光スィッチの一実施例の
斜視図である。FIG. 1 is a perspective view of an embodiment of the LiNbO3 optical switch of the present invention.
ＬｉＮｂＯ３光スィッチ１０は、ＬｉＮｂＯ３基板１の
片面に、複数のＴｉ導波路２と、スイッチングする為の
電極３を基本構成として有し、さらにＬ ｉ Ｎ ｂ
０３基板１の帯電を防止する為に、裏面側にＣｒ−Ａｕ
、Ｔｉ−Ａｕ等の金属膜４を備えて構成される。The LiNbO3 optical switch 10 has a plurality of Ti waveguides 2 and an electrode 3 for switching on one side of a LiNbO3 substrate 1 as a basic configuration, and further includes L i N b
03 In order to prevent the board 1 from being charged, Cr-Au is placed on the back side.
, a metal film 4 such as Ti-Au.
Ｃｒ−Ａｕ、Ｔｉ−Ａｕ等の金属成膜は、Ｔｉ拡散後の
工程でスパッタ装置等によって容易に行うことができる
。Metal films such as Cr-Au and Ti-Au can be easily formed using a sputtering device or the like in a step after Ti diffusion.
ＬｉＮｂＯ３は元来強誘電体であり、高温状態に飼えば
５０℃程度の環境に放置するだけでも帯電し、これに対
する放電が充分でないと等価的に電極３に電圧が印加し
た状態になる９
つまり、スイッチ特性が帯電によって変１ヒするが、本
実施例のように裏面にＣｒ−Ａｕ、Ｔｉ−Ａｕ等の金属
膜４を形成し、金属膜４をアースに短絡（図示しない）
することによって、高温状態例えば、使用環境温度が５
０℃〜６０’Ｃ程度になっても帯電せず良好なスイッチ
特性が得られる。LiNbO3 is originally a ferroelectric material, and if it is kept in a high temperature state, it will become charged even if it is left in an environment of around 50 degrees Celsius, and if there is not enough discharge in response to this, a voltage will equivalently be applied to the electrode 39. However, as in this embodiment, a metal film 4 of Cr-Au, Ti-Au, etc. is formed on the back surface, and the metal film 4 is short-circuited to ground (not shown).
By doing so, you can avoid high temperature conditions, for example, when the operating environment temperature is 5.
Good switching characteristics can be obtained without being charged even at temperatures of about 0°C to 60'C.
以上説明したように本発明によれば、ＬｉＮｂＯ３光ス
ィッチの先導波路を配設しない面を利用しζこれにＬｉ
ＮｂＯ３基板の帯電電荷放電用の金属膜を形成すること
により、ＬｉＮｂＯ３基板の強誘電性ならびに温度によ
る帯電を排除し、安定したスイッチング動作ができる高
品質のＬｉＮｂＯ３光スィッチが実現できるという効果
がある。As explained above, according to the present invention, the surface of the LiNbO3 optical switch on which the leading wavepath is not disposed is utilized and the Li
By forming a metal film for discharging the charged charges on the NbO3 substrate, charging due to the ferroelectricity and temperature of the LiNbO3 substrate can be eliminated, and a high-quality LiNbO3 optical switch capable of stable switching operation can be realized.
第１図は、本発明のＬｉＮｂＯ３の一実施例の斜視図で
ある。
１・・・Ｌ ｉ Ｎ ｂ Ｏ３基板、２・・・Ｔｉ導波
路、３・・・’を極、４・・・金属膜、１０・・・Ｌ
ｉ Ｎ ｂ Ｏｓ光スイットFIG. 1 is a perspective view of an embodiment of LiNbO3 of the present invention. 1...L i N b O3 substrate, 2...Ti waveguide, 3...' as pole, 4...metal film, 10...L
i N b Os optical switch
Claims (1)
波路を形成し光スイッチング動作を可能ならしめる電極
を前記Ｔｉ導波路もしくはその近傍に配設して成るＬｉ
ＮｂＯ＿３光スイッチにおいて、 前記ＬｉＮｂＯ＿３基板のＴｉ導波路を配設しない面に
前記ＬｉＮｂＯ＿３基板に帯電した電荷を地気に放電す
る金属膜を形成して成ることを特徴とするＬｉＮｂＯ＿
３光スイッチ。[Claims] A LiNbO_3 substrate is formed by selectively diffusing Ti on one side to form a Ti waveguide, and an electrode for enabling optical switching operation is disposed at or near the Ti waveguide.
The NbO_3 optical switch is characterized in that a metal film is formed on the surface of the LiNbO_3 substrate on which the Ti waveguide is not disposed, for discharging the charges accumulated on the LiNbO_3 substrate to the ground.
3 light switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22205089A JPH0383025A (en) | 1989-08-28 | 1989-08-28 | Linbo3 optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22205089A JPH0383025A (en) | 1989-08-28 | 1989-08-28 | Linbo3 optical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0383025A true JPH0383025A (en) | 1991-04-09 |
Family
ID=16776314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22205089A Pending JPH0383025A (en) | 1989-08-28 | 1989-08-28 | Linbo3 optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0383025A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07199134A (en) * | 1993-11-22 | 1995-08-04 | At & T Corp | Structure and method for photoelecton device for reducing temperature effect in lightguide modulator |
-
1989
- 1989-08-28 JP JP22205089A patent/JPH0383025A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07199134A (en) * | 1993-11-22 | 1995-08-04 | At & T Corp | Structure and method for photoelecton device for reducing temperature effect in lightguide modulator |
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