JPH0381295B2 - - Google Patents
Info
- Publication number
- JPH0381295B2 JPH0381295B2 JP4821882A JP4821882A JPH0381295B2 JP H0381295 B2 JPH0381295 B2 JP H0381295B2 JP 4821882 A JP4821882 A JP 4821882A JP 4821882 A JP4821882 A JP 4821882A JP H0381295 B2 JPH0381295 B2 JP H0381295B2
- Authority
- JP
- Japan
- Prior art keywords
- processing container
- heat
- top plate
- base
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000012809 cooling fluid Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048218A JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048218A JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164222A JPS58164222A (ja) | 1983-09-29 |
| JPH0381295B2 true JPH0381295B2 (cs) | 1991-12-27 |
Family
ID=12797268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57048218A Granted JPS58164222A (ja) | 1982-03-25 | 1982-03-25 | 加熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164222A (cs) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237744A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 搬送装置 |
| US5324684A (en) * | 1992-02-25 | 1994-06-28 | Ag Processing Technologies, Inc. | Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
| US5445675A (en) * | 1992-07-09 | 1995-08-29 | Tel-Varian Limited | Semiconductor processing apparatus |
| DE4242154C2 (de) * | 1992-12-14 | 1995-04-20 | United Carr Gmbh Trw | Verschlußdeckel |
| CN112041627B (zh) * | 2018-11-14 | 2022-07-05 | 株式会社爱发科 | 真空加热装置、反射器装置 |
-
1982
- 1982-03-25 JP JP57048218A patent/JPS58164222A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58164222A (ja) | 1983-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0181942B1 (ko) | 반도체 가공용 내압 열반응로 시스템 | |
| KR910007109B1 (ko) | 화학증기증착 반응기용 반사장치 | |
| US6064800A (en) | Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes | |
| US4857704A (en) | Apparatus for thermal treatments of thin parts such as silicon wafers | |
| KR100338893B1 (ko) | 회전 기판을 가진 빠른 열적 가공(rtp) 장치 | |
| US6331697B2 (en) | System and method for rapid thermal processing | |
| US5493987A (en) | Chemical vapor deposition reactor and method | |
| GB2181458A (en) | Apparatus and method for an axially symmetric chemical vapor deposition reactor | |
| KR950006955A (ko) | 열 처리장치 및 열처리방법 | |
| KR20020021640A (ko) | 냉각 윈도우 | |
| EP1097470B1 (en) | Infra-red transparent thermal reactor cover member | |
| TW201500576A (zh) | 用於半導體處理腔室的吸收反射體 | |
| JPH0381295B2 (cs) | ||
| KR960032594A (ko) | 표준 고온 상태의 벽을 갖춘 반응챔버 | |
| JPS594434A (ja) | 気相反応装置 | |
| US4419332A (en) | Epitaxial reactor | |
| JPH03291940A (ja) | 半導体製造装置の均一加熱構造 | |
| JPH06260422A (ja) | ガラス基板加熱方法及びその装置 | |
| JPS60189927A (ja) | 気相反応容器 | |
| JP4227578B2 (ja) | 加熱方法および画像表示装置の製造方法 | |
| JPH0729844A (ja) | 半導体基板の赤外線加熱方法及び赤外線加熱装置 | |
| JPS6366930A (ja) | 光照射装置 | |
| JPS60116778A (ja) | 化学蒸着方法及び装置 | |
| JPH0510354Y2 (cs) | ||
| JPH0323629A (ja) | 半導体素子製造装置 |