JPH0377387A - Two-beam-array semiconductor laser device - Google Patents

Abstract

PURPOSE:To obtain a two-beam-array semiconductor laser device having both an LD for high output and an LD for low noise by preventing the current implantation V-groove of one of the two LD's from being etched at a part in the center. CONSTITUTION:A laser is made hard to excite and emitted laser beams are easily provided with many modes by forming a saturable absorber in the unetched center of the V-groove 4 of an LDB, therefore, the LDB has a low- noise characteristic and an LDA has a high-output characteristic. The coating films on the beam emitting front end faces of the two LD's have the same reflection factor, hence, the films can be formed at the same time, facilitating the work.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a two-beam array semiconductor laser device.

[Prior Art] FIG. 3 shows a sectional view of the light emitting front end face of a conventional V-515 type two-beam array semiconductor laser device.

In the figure, (1) is the light emitting point for the laser diode (hereinafter referred to as LD), (2) is the light emitting point of LD B, and (4)
is a V-groove for current injection, (5) is a separation groove, and (6) is a reflectance of 1.
2% coating film, and (7) is a coating film with a reflectance of 30%.

Next, the operation will be explained. The two LDs in one chip are electrically separated by a separation groove (5) and oscillate independently.

The reflectance of the coating film on the rear end face of LDA and LD[l is 60%, and the reflectance of the front end face is 12% and 30%, respectively.
Since the reflectance of the front facet of the LDA is low, high output can be obtained, and the LDB has low output and low noise.

[Three problems to be solved by the invention] Since the conventional two-beam array semiconductor laser device was configured as described above, the coating film on the front facet was formed by forming a coating film with a reflectance of 12% and a reflectance of 30%. There was a problem in that it had to be done twice.

This invention was made to solve the above-mentioned problems, and it is possible to combine two LDs, one for high output and one for low noise, while keeping the same reflectance of the coating film on the end facets of the two LDs.
．． The purpose is to obtain a two-beam array "[conductor laser device] having both 0 and 0 beams.

[Means for Solving the Problems] A two-beam array semiconductor laser device according to the present invention has two
Improvement of two LDs The V-groove for current injection of two LDs is made so that a part of its center is not etched.

Effect] Since the coating film for the light emitting front bridge in the present invention has the same reflectance in the two LDs, the film can be formed in only 1 [ol], which simplifies the work.

[Example] Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 is a perspective view of a two-beam array semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken at the center of FIG.

In Figures 1 and 2, (1) is the light emitting point of LDA, (2) is the light emitting point of LD8, (3) is the block layer, (4) is the light emitting point of LD8, and (3) is the block layer.
) is the V groove for current injection, and (5) is the minute IiI! Shows the groove. At this time, 1. Since the V-groove (5) for current injection is not etched in the center of the DB, in the cross-sectional view of the center, FIG.
■ Groove (5) is not seen in LD2.

Further, at this time, the reflectance of the coating films on the light emitting front end face and the rear end face of the two LDs is set to 30% and 60%, respectively.

Next, operation C will be explained. In the LDB, ■ a saturable absorber (Sai,
urable Ahserver) is formed, making it difficult to oscillate the laser, and the single oscillation laser beam becomes easily multimode. Look out for high output special features.

[Effect of the invention] As described above, according to this invention, the reflectance of the coating toward the light emitting front bridge of the two LDs is made the same, so the film can be formed only once, which simplifies the manufacturing work. have

[Brief explanation of drawings]

′! Figure A1 is a perspective view of a two-beam array semiconductor laser device according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the central part of the two-beam array semiconductor laser device shown in Figure 3, and Figure 3 is a conventional two-beam array semiconductor laser device. FIG. 2 is a cross-sectional view showing a light emitting front end face of a semiconductor laser device. In the figure, (1) is the light emitting point of LDA, and (2) is LDB.
, (3) is the block layer, (4) is the current injection V
Groove (5) indicates a separation groove. In addition, in the figures, the same symbols refer to the same or corresponding parts.
.

Claims (1)

[Claims] In two electrically separated laser diodes, 1
One laser diode is a high output laser diode, the other laser diode is a laser diode with low noise characteristics,
A two-beam array semiconductor laser device characterized in that a V-groove for current injection is not etched in a central part of a laser diode on the latter side.