JPH0376035B2 - - Google Patents

Info

Publication number
JPH0376035B2
JPH0376035B2 JP56193201A JP19320181A JPH0376035B2 JP H0376035 B2 JPH0376035 B2 JP H0376035B2 JP 56193201 A JP56193201 A JP 56193201A JP 19320181 A JP19320181 A JP 19320181A JP H0376035 B2 JPH0376035 B2 JP H0376035B2
Authority
JP
Japan
Prior art keywords
layer
atoms
layer region
group
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56193201A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5893385A (ja
Inventor
Kyosuke Ogawa
Shigeru Shirai
Junichiro Kanbe
Keishi Saito
Yoichi Oosato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56193201A priority Critical patent/JPS5893385A/ja
Priority to US06/443,164 priority patent/US4460670A/en
Priority to GB08233456A priority patent/GB2111707B/en
Priority to DE3243928A priority patent/DE3243928C2/de
Publication of JPS5893385A publication Critical patent/JPS5893385A/ja
Publication of JPH0376035B2 publication Critical patent/JPH0376035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
JP56193201A 1981-11-26 1981-11-30 光導電部材 Granted JPS5893385A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56193201A JPS5893385A (ja) 1981-11-30 1981-11-30 光導電部材
US06/443,164 US4460670A (en) 1981-11-26 1982-11-19 Photoconductive member with α-Si and C, N or O and dopant
GB08233456A GB2111707B (en) 1981-11-26 1982-11-24 Photoconductive member
DE3243928A DE3243928C2 (de) 1981-11-26 1982-11-26 Fotoleitfähiges Element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56193201A JPS5893385A (ja) 1981-11-30 1981-11-30 光導電部材

Publications (2)

Publication Number Publication Date
JPS5893385A JPS5893385A (ja) 1983-06-03
JPH0376035B2 true JPH0376035B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=16303978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56193201A Granted JPS5893385A (ja) 1981-11-26 1981-11-30 光導電部材

Country Status (1)

Country Link
JP (1) JPS5893385A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059356A (ja) * 1983-09-12 1985-04-05 Toshiba Corp 光導電部材
CN1014650B (zh) * 1987-12-14 1991-11-06 中国科学院上海硅酸盐研究所 具过渡层的光接受体及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device

Also Published As

Publication number Publication date
JPS5893385A (ja) 1983-06-03

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