JPH0375930B2 - - Google Patents
Info
- Publication number
- JPH0375930B2 JPH0375930B2 JP13388182A JP13388182A JPH0375930B2 JP H0375930 B2 JPH0375930 B2 JP H0375930B2 JP 13388182 A JP13388182 A JP 13388182A JP 13388182 A JP13388182 A JP 13388182A JP H0375930 B2 JPH0375930 B2 JP H0375930B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive
- core
- magnetoresistive film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 35
- 230000001681 protective effect Effects 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 229910000859 α-Fe Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910000889 permalloy Inorganic materials 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020641 Co Zr Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910020520 Co—Zr Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気抵抗効果を使用した磁気抵抗効果
型磁気ヘツドに関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a magnetoresistive magnetic head using the magnetoresistive effect.
背景技術とその問題点
一般に磁気抵抗効果を使用した再生磁気ヘツド
としての磁気抵抗効果型磁気ヘツドが提案されて
いる。この磁気抵抗効果型磁気ヘツドは電磁誘導
型再生磁気ヘツドに比し、狭トラツク再生、短波
長再生、超低速再生が可能である利益がある。こ
の磁気抵抗効果型磁気ヘツドとして第１図及び第
２図に示す如き基板の磁気記録媒体摺接面とは離
れた位置に磁気抵抗効果素子を設けた所謂リアタ
イプの磁気抵抗効果型磁気ヘツドが提案されてい
る。即ち第１図及び第２図に於いて、１は一方の
コアを構成するNi−Znフエライト、Mn−Znフ
エライト等のフエライト基板を示し、このフエラ
イト基板１上の後述する磁気抵抗効果膜４の対応
部に相当する所定位置にSiO2又はAl2O3の絶縁層
２ａを設け、この絶縁層２ａ上の磁気テープ３の
摺接面３ａより所定距離例えば10μm以上離れた
位置にコ字状に所定幅例えば５〜10μm幅のNi−
Fe系合金、Ni−Co系合金等の磁気抵抗効果を有
する磁気抵抗効果膜４をスパツタリングにより被
着する。この磁気抵抗効果膜４の信号検出部４ａ
の両端部よりAu膜５をこの磁気抵抗効果膜４上
に積層してこの磁気テープ３の摺接面３ａとは反
対側に導出し、これにより磁気抵抗効果膜４に電
流を流すと共に再生信号を取り出す様にする。又
この磁気抵抗効果膜４の信号検出部４ａ上にこの
磁気抵抗効果膜４と抵抗値の略等しい例えばチタ
ン、タンタル、クロム等の膜５ａを積層し、これ
に電流を流して所定のバイアス磁界を生ずる如く
する。又この場合この代りにこの磁気抵抗効果膜
４の信号検出部４ａ上にAuの縞状の膜所謂バー
バーポールを設けて所定のバイアス磁界を生ずる
様にしても良い。次に磁気回路を構成する後述す
る他方のコアとフエライト基板１との接合部１ａ
を除いて、フエライト基板１、磁気抵抗効果膜４
上全面にヘツド磁気ギヤツプに相当する例えば
0.2〜0.5μmの厚さのSiO2又はAl2O3の絶縁層２ｂ
を被着する。この絶縁層２ｂ上に磁気抵抗効果膜
４の信号検出部４ａを跨ぐ如く、そのトラツク幅
ｌに相当する例えば数10μm〜数100μmの幅の他
方のコアを構成する透磁率μが大で抗磁力Hcの
小さい例えばパーマロイ、モリブデンパーマロ
イ、センダスト、Co−Zr、Fe−Ｂ等のアモルフ
アス膜等を厚さ例えば２〜3μmで磁気テープ３の
摺接面３ａより所定長スパツター又は蒸着により
コア磁性体層６を被着する。この場合このコア磁
性体層６の磁気抵抗効果膜４の信号検出部４ａ上
に対応する部分に２〜5μmのギヤツプ６ａを形成
し、このギヤツプ６ａにより磁気テープ３よりの
再生磁束が良好に磁気抵抗効果膜４に供給される
如くなす。又この場合磁気テープ３の摺接面３ａ
に於いてフエライト基板１の端部とコア磁性体層
６の端部とでヘツド磁気ギヤツプ７を構成する如
くすると共にこのコア磁性体層６の後部をフエラ
イト基板１に接続し、このコア磁性体層６とフエ
ライト基板１とで磁気回路を構成する如くする。BACKGROUND TECHNOLOGY AND PROBLEMS Generally, a magnetoresistive magnetic head has been proposed as a reproducing magnetic head that uses the magnetoresistive effect. This magnetoresistive magnetic head has the advantage of being capable of narrow track reproduction, short wavelength reproduction, and ultra-low speed reproduction compared to electromagnetic induction type reproduction magnetic heads. As shown in FIGS. 1 and 2, this magnetoresistive head is a so-called rear type magnetoresistive head in which a magnetoresistive element is provided at a position away from the sliding contact surface of a substrate with a magnetic recording medium. Proposed. That is, in FIGS. 1 and 2, numeral 1 indicates a ferrite substrate such as Ni-Zn ferrite or Mn-Zn ferrite constituting one core, and a magnetoresistive film 4, which will be described later, on this ferrite substrate 1. An insulating layer 2a of SiO 2 or Al 2 O 3 is provided at a predetermined position corresponding to the corresponding portion, and a U-shape is provided at a predetermined distance, for example, 10 μm or more away from the sliding surface 3a of the magnetic tape 3 on this insulating layer 2a. Ni- with a predetermined width, for example, 5 to 10 μm
A magnetoresistive film 4 having a magnetoresistive effect, such as Fe-based alloy or Ni-Co-based alloy, is deposited by sputtering. Signal detection section 4a of this magnetoresistive film 4
An Au film 5 is laminated on the magnetoresistive film 4 from both ends of the magnetic tape 3 and led out to the side opposite to the sliding surface 3a of the magnetic tape 3, thereby allowing a current to flow through the magnetoresistive film 4 and transmitting a reproduced signal. Make sure to take it out. Further, a film 5a made of titanium, tantalum, chromium, etc., which has approximately the same resistance value as the magnetoresistive film 4, is laminated on the signal detection portion 4a of the magnetoresistive film 4, and a current is passed through this film to generate a predetermined bias magnetic field. so that it occurs. In this case, instead of this, an Au striped film, so-called barber pole, may be provided on the signal detection portion 4a of the magnetoresistive film 4 to generate a predetermined bias magnetic field. Next, a joint 1a between the other core and the ferrite substrate 1, which will be described later and constitutes a magnetic circuit.
Except for ferrite substrate 1, magnetoresistive film 4
For example, the upper surface corresponds to a head magnetic gap.
Insulating layer 2b of SiO 2 or Al 2 O 3 with a thickness of 0.2-0.5 μm
be coated with. On this insulating layer 2b, the other core with a width of several tens of μm to several hundreds of μm corresponding to the track width l is formed so as to straddle the signal detection part 4a of the magnetoresistive film 4. The core magnetic material layer is formed by sputtering or vapor-depositing an amorphous film having a low Hc such as Permalloy, Molybdenum Permalloy, Sendust, Co-Zr, Fe-B, etc. to a thickness of 2 to 3 μm from the sliding contact surface 3a of the magnetic tape 3. 6 is applied. In this case, a gap 6a of 2 to 5 μm is formed in a portion of the core magnetic layer 6 that corresponds to the signal detecting portion 4a of the magnetoresistive film 4, and this gap 6a allows the magnetic flux from the magnetic tape 3 to be transferred to a good magnetic field. It is made so that it is supplied to the resistance effect film 4. In this case, the sliding surface 3a of the magnetic tape 3
The end of the ferrite substrate 1 and the end of the core magnetic layer 6 form a head magnetic gap 7, and the rear part of the core magnetic layer 6 is connected to the ferrite substrate 1. The layer 6 and the ferrite substrate 1 constitute a magnetic circuit.
その後全面に亘つてSiO2の絶縁層２ｃを被着
すると共にこの絶縁層２ｃ上に接着剤８等により
フエライト基板１と硬度の略々等しいガラス板、
セラミツク板等の保護板９を被着する。 Thereafter, an insulating layer 2c of SiO 2 is applied over the entire surface, and a glass plate having approximately the same hardness as the ferrite substrate 1 is coated on this insulating layer 2c with an adhesive 8 or the like.
A protective plate 9 such as a ceramic plate is applied.
斯る従来のリアタイプの磁気抵抗効果型磁気ヘ
ツドは磁気抵抗効果膜４が直接磁気テープに接触
しないので、この磁気抵抗効果膜が摩耗すること
がない。 In such a conventional rear type magnetoresistive magnetic head, the magnetoresistive film 4 does not come into direct contact with the magnetic tape, so the magnetoresistive film does not wear out.
然しながら斯る従来のリアタイプ磁気抵抗効果
型磁気ヘツドにあつては、フエライト基板１を一
方のコアとして使用しているので磁気抵抗効果膜
４を絶縁層２ａ上に形成せざるを得ず、この絶縁
層２ａ上にこの磁気抵抗効果膜４を形成するとき
は絶縁層２ａの表面の粗度が大きく、この影響に
より抗磁力Hcの小さい磁気抵抗効果膜を安定に
作ることが困難であり、又耐摩耗の点からして、
フエライト基板１は比較的硬度が小さいので磁気
テープ摺接面３ａより磁気抵抗効果膜４までの距
離を比較的大きく10μm以上とる必要があり、こ
の為再生磁気効率の非常に悪い磁気回路をなし良
好な再生信号が得られない欠点があつた。 However, in such a conventional rear type magnetoresistive magnetic head, since the ferrite substrate 1 is used as one core, the magnetoresistive film 4 has to be formed on the insulating layer 2a. When forming this magnetoresistive film 4 on the insulating layer 2a, the surface roughness of the insulating layer 2a is large, and this influence makes it difficult to stably produce a magnetoresistive film with a small coercive force Hc. In terms of wear resistance,
Since the ferrite substrate 1 has relatively low hardness, the distance from the magnetic tape sliding contact surface 3a to the magnetoresistive film 4 must be relatively large, 10 μm or more, which results in a magnetic circuit with very poor reproduction magnetic efficiency, resulting in a good result. The drawback was that a good playback signal could not be obtained.
発明の目的
本発明は斯る点に鑑み再生効率を改善した良好
な再生信号の得られるリアタイプの磁気抵抗効果
型磁気ヘツドを提案せんとするものである。OBJECTS OF THE INVENTION In view of the above, the present invention proposes a rear type magnetoresistive magnetic head that improves reproduction efficiency and provides a good reproduction signal.
発明の概要
本発明は非磁性基板例えばサフアイア基板上に
この非磁性基板の磁気記録媒体摺接面とは離れた
位置に磁気抵抗効果素子を形成し、この磁気抵抗
効果素子と磁気的に結合される第１のコアと、こ
の磁気記録媒体摺接面に臨む磁気ギヤツプを有す
る磁気回路を形成する如く第２のコアを設けると
共にこの磁気回路を非磁性基板と挾む如くこの非
磁性基板に対向する保護板を設ける様にし、再生
磁気効率の良い磁気回路を構成し、良好な再生信
号が得られる様にしたものである。Summary of the Invention The present invention forms a magnetoresistive element on a non-magnetic substrate, such as a sapphire substrate, at a position away from the sliding contact surface of the magnetic recording medium of the non-magnetic substrate, and magnetically couples the magnetoresistive element with the magnetic recording medium. A second core is provided to form a magnetic circuit having a magnetic gap facing the sliding contact surface of the magnetic recording medium, and a second core is provided facing the non-magnetic substrate so as to sandwich the magnetic circuit with the non-magnetic substrate. A protective plate is provided to form a magnetic circuit with high reproduction magnetic efficiency, and a good reproduction signal can be obtained.
実施例
以下第３図を参照しながら本発明磁気抵抗効果
型磁気ヘツドの一実施例につき説明しよう。この
第３図に於いて第１図及び第２図に対応する部分
には同一符号を付し、その詳細説明は省略する。Embodiment An embodiment of the magnetoresistive magnetic head of the present invention will be described below with reference to FIG. In FIG. 3, parts corresponding to those in FIGS. 1 and 2 are designated by the same reference numerals, and detailed explanation thereof will be omitted.
第３図に於いて、１０は非磁性基板例えばサフ
アイア基板を示し、このサフアイア基板１０上の
磁気テープ３の摺接面３ａより所定距離例えば２
〜5μm離れた位置に第１図、第２図同様のコ字状
の所定幅例えば５〜10μm幅のNi−Fe系合金、
Ni−Co系合金等の磁気抵抗効果を有する磁気抵
抗効果膜４をスパツタリングにより被着する。 In FIG. 3, numeral 10 indicates a non-magnetic substrate such as a sapphire substrate, and a predetermined distance, e.g. 2
At a position ~5 μm apart, a U-shaped Ni-Fe alloy with a predetermined width of, for example, 5 to 10 μm, similar to FIGS. 1 and 2, is placed.
A magnetoresistive film 4 having a magnetoresistive effect, such as a Ni--Co alloy, is deposited by sputtering.
この場合サフアイア基板１０の表面は滑らかな
ので抗磁力Hcの小さい磁気抵抗効果膜４を安定
に作ることができる。この磁気抵抗効果膜４の信
号検出部の両端部より第１図、第２図と同様に
Au膜をこの磁気抵抗効果膜４上に積層してこの
磁気テープ３の摺接面３ａとは反対側に導出し、
これにより磁気抵抗効果膜４に電流を流す様にす
ると共に再生信号を取り出す様にする。 In this case, since the surface of the sapphire substrate 10 is smooth, the magnetoresistive film 4 having a small coercive force Hc can be stably produced. From both ends of the signal detection part of this magnetoresistive film 4, similar to FIGS. 1 and 2,
An Au film is laminated on this magnetoresistive film 4 and led out to the side opposite to the sliding surface 3a of this magnetic tape 3,
This causes a current to flow through the magnetoresistive film 4 and allows a reproduced signal to be extracted.
又この磁気抵抗効果膜４の信号検出部４ａ上に
この磁気抵抗効果膜４と抵抗値の略等しい例えば
チタンの膜５ａを積層し、これにも電流が流れる
様にして所定のバイアス磁界が生ずる如くする。
又この場合この代りに磁気抵抗効果膜４の信号検
出部４ａの信号検出部４ａ上にAuのバーバーポ
ールを設けて所定のバイアス磁界を生ずる様にし
ても良い。 Further, a film 5a made of, for example, titanium, which has approximately the same resistance value as the magnetoresistive film 4, is laminated on the signal detecting portion 4a of the magnetoresistive film 4, and a current flows through this film as well, thereby generating a predetermined bias magnetic field. Do as you like.
In this case, instead of this, an Au barber pole may be provided on the signal detecting section 4a of the magnetoresistive film 4 to generate a predetermined bias magnetic field.
この磁気抵抗効果膜４、サフアイア基板１０の
全面に亘つてSiO2、Al2NO3等の絶縁層１１ａを
被着する。 An insulating layer 11a of SiO 2 , Al 2 NO 3 or the like is deposited over the entire surface of the magnetoresistive film 4 and the sapphire substrate 10 .
この絶縁層１１ａ上に磁気抵抗効果膜４の信号
検出部４ａを跨ぐ如く、磁気テープ３のトラツク
幅ｌに相当する例えば数10μm〜数100μmの幅の
一方のコアを構成する透磁率μが大で抗磁力Hc
の小さい例えばパーマロイ、モリブデンパーマロ
イ、センダスト、アモルフアス等を厚さ例えば２
〜3μmで磁気テープ３の摺接面３ａより所定長ス
パツター又は蒸着によりコア磁性体層１２を被着
する。この場合このコア磁性体層１２の磁気抵抗
効果膜４の信号検出部４ａ上に対応する部分に２
〜5μmのギヤツプ１２ａを形成し、このギヤツプ
１２ａにより磁気テープ３よりの再生磁束が良好
に磁気抵抗効果膜４の信号検出部４ａに供給され
る如くなす。 On this insulating layer 11a, a magnetic permeability μ constituting one core having a width of, for example, several tens of μm to several hundreds of μm, corresponding to the track width l of the magnetic tape 3 is formed so as to straddle the signal detection portion 4a of the magnetoresistive film 4. Coercive force Hc
For example, permalloy, molybdenum permalloy, sendust, amorphous, etc. with a thickness of 2
The core magnetic layer 12 is deposited to a predetermined length from the sliding contact surface 3a of the magnetic tape 3 by sputtering or vapor deposition to a thickness of ~3 μm. In this case, a portion of the magnetoresistive film 4 of the core magnetic layer 12 corresponding to the signal detection portion 4a is
A gap 12a of ~5 .mu.m is formed so that the reproduced magnetic flux from the magnetic tape 3 can be well supplied to the signal detecting section 4a of the magnetoresistive film 4 through the gap 12a.
次にこのコア磁性体層１２の後方部の磁気回路
を構成する後述する他方のコアを構成するコア磁
性体層と接合する部分を除きコア磁性体層１２、
絶縁層１１ａ上全面にSiO2又はAl2O3の絶縁層１
１ｂを被着する。この場合絶縁層１１ｂは磁気テ
ープ３の摺接面３ａの近傍に於いてはヘツド磁気
ギヤツプ７に相当する例えば0.2〜0.5μmの厚さと
し、コア磁性体層１２のギヤツプ１２ａの上部に
於いては中盛となる如くする。 Next, the core magnetic layer 12 except for the portion bonded to the core magnetic layer constituting the other core, which will be described later, constituting the magnetic circuit in the rear part of the core magnetic layer 12,
An insulating layer 1 of SiO 2 or Al 2 O 3 is formed on the entire surface of the insulating layer 11a.
1b is applied. In this case, the insulating layer 11b has a thickness of, for example, 0.2 to 0.5 μm near the sliding surface 3a of the magnetic tape 3, which corresponds to the head magnetic gap 7, and the thickness above the gap 12a of the core magnetic layer 12 has a thickness of 0.2 to 0.5 μm. Make sure it is medium-sized.
この絶縁層１１ｂ上にコア磁性体層１２と重な
る如く磁気テープ３のトラツク幅ｌに相当する例
えば数10μm〜数100μmの幅の他方のコアを構成
する透磁率μが大で抗磁力Hcの小さい例えばパ
ーマロイ、モリブデンパーマロイ、センダスト、
アモルフアス等を厚さ例えば２〜3μmで磁気テー
プ３の摺接面３ａより所定長スパツター又は蒸着
により他方のコア磁性体層１３を被着する。この
場合磁気テープ３の摺接面３ａに於いて、一方の
コア磁性体層１２の端部と他方のコア磁性体層１
３の端部とでヘツド磁気ギツプ７を構成する如く
すると共にこの一方及び他方のコア磁性体層１２
及び１３の夫々の後部を接合して、このコア磁性
体層１２及び１３で磁気回路を構成する如くす
る。 On this insulating layer 11b, the other core with a width of several tens of μm to several hundred μm corresponding to the track width l of the magnetic tape 3 is formed so as to overlap with the core magnetic layer 12. The magnetic permeability μ is large and the coercive force Hc is small. For example, permalloy, molybdenum permalloy, Sendust,
The other core magnetic layer 13 is coated with amorphous amorphous or the like to a thickness of, for example, 2 to 3 μm from the sliding surface 3a of the magnetic tape 3 by sputtering or vapor deposition. In this case, on the sliding contact surface 3a of the magnetic tape 3, the end of one core magnetic layer 12 and the other core magnetic layer 1
3 to form a head magnetic gap 7, and the core magnetic layer 12 on one side and the other side
and 13 are joined to each other, so that the core magnetic layers 12 and 13 form a magnetic circuit.
その上に全面に亘つてSiO2又はAl2O3の絶縁層
１１ｃを被着すると共にこの絶縁層１１ｃ上に接
着剤８等により非磁性基板１０と硬度の略同じ本
例に於いてサフアイア板の保護板１４を被着す
る。 An insulating layer 11c of SiO 2 or Al 2 O 3 is applied over the entire surface of the insulating layer 11c, and a sapphire plate having approximately the same hardness as the non-magnetic substrate 10 is bonded onto this insulating layer 11c using an adhesive 8 or the like. A protective plate 14 is applied.
本例に依れば第１図、第２図例と同様に磁気テ
ープ３に記録された信号を再生することができ
る。 According to this example, signals recorded on the magnetic tape 3 can be reproduced in the same manner as in the examples shown in FIGS. 1 and 2.
この場合本例に依れば滑らかな表面のサフアイ
ア基板１０の上に直接に磁気抵抗効果膜４を形成
しているので抗磁力Hcの比較的小さい磁気抵抗
効果膜を安定して形成することができると共にサ
フアイア基板１０，１４は比較的硬度が大きいの
で耐摩耗性が良く、この為、磁気テープ３の摺接
面３ａより磁気抵抗効果膜４までの距離を比較的
小さく２〜5μmとすることができ、再生磁気効率
の良い磁気回路を得ることができ、従来に比し感
度を大幅に増大することができ、良好な再生信号
を得ることができる。 In this case, according to this example, since the magnetoresistive film 4 is formed directly on the smooth surface of the sapphire substrate 10, it is possible to stably form a magnetoresistive film with a relatively small coercive force Hc. In addition, the sapphire substrates 10 and 14 have relatively high hardness and therefore have good wear resistance. Therefore, the distance from the sliding contact surface 3a of the magnetic tape 3 to the magnetoresistive film 4 should be relatively small, 2 to 5 μm. Therefore, it is possible to obtain a magnetic circuit with high reproduction magnetic efficiency, and the sensitivity can be greatly increased compared to the conventional one, and a good reproduction signal can be obtained.
更に本例に依ればサフアイア基板１０，１４を
使用しているので、このサフアイア基板１０，１
４は熱伝導が良好であり、良好に熱発散をするこ
とができこの為発熱による熱雑音も低減すること
ができる。 Furthermore, according to this example, since the sapphire substrates 10, 14 are used, the sapphire substrates 10, 1
No. 4 has good heat conduction and can dissipate heat well, so that thermal noise due to heat generation can also be reduced.
第４図及び第５図は夫々本発明の他の実施例を
示す。 FIGS. 4 and 5 show other embodiments of the present invention, respectively.
この第４図に於いては第３図例に於いて磁気抵
抗効果膜４、サフアイア基板１０の全面に亘つて
SiO2、Al2O3等の絶縁層１１ａを被着した後、こ
の絶縁層１１ａをこの磁気抵抗効果膜４の周囲だ
けを残して除去し、一方のコア磁性体層１２を直
接サフアイア基板１０上に形成し、その他は第３
図同様に構成したものである。 In this FIG. 4, the magnetoresistive film 4 and the entire surface of the sapphire substrate 10 in the example of FIG.
After depositing an insulating layer 11a of SiO 2 , Al 2 O 3 or the like, this insulating layer 11a is removed leaving only the periphery of the magnetoresistive film 4, and one core magnetic layer 12 is directly attached to the sapphire substrate 10. form the top, and the others form the third
The structure is similar to the one shown in the figure.
この第４図に於いても第３図同様の作用効果が
得られると共にこの第４図例に於いては表面が滑
らかなサフアイア基板１０上に直接一方のコア磁
性体層１２を形成するので抗磁力Hcの小さい安
定なコア磁性体層１２を得ることができ、更に磁
気テープ３の摺接面３ａに於いて、絶縁層１１ａ
がないのでそれだけ磁気ヘツドを薄くできると共
に耐摩耗性が向上する利益がある。 In the example shown in FIG. 4, the same effect as shown in FIG. 3 can be obtained, and in the example shown in FIG. A stable core magnetic layer 12 with a small magnetic force Hc can be obtained, and furthermore, on the sliding contact surface 3a of the magnetic tape 3, an insulating layer 11a can be obtained.
This has the advantage that the magnetic head can be made thinner and wear resistance is improved.
又第５図は第３図に於いてバイアス磁界発生用
のチタンの膜５ａを設けることなく、複数の上述
磁気ヘツドの一方及び他方のコア磁性体層１２及
び１３間に共通に例えばAuのバイアスライン１
５を設け、これに所定の電流を流す様にし、全ト
ラツクに対する複数の磁気ヘツドに一括してバイ
アス磁界を供給したものである。 In addition, FIG. 5 shows a structure in which, unlike FIG. 3, the titanium film 5a for generating a bias magnetic field is not provided, and a bias layer of, for example, Au is commonly used between the core magnetic layers 12 and 13 of one and the other of the plurality of magnetic heads. line 1
5, a predetermined current is passed through this, and a bias magnetic field is supplied to a plurality of magnetic heads for all tracks at once.
尚上述の実施例に依れば非磁性基板としてサフ
アイア基板を用いたが、表面粗度が良く、熱伝導
性が良いものであれば他のものも用いることがで
きる。特に表面粗度は100Å以下が好ましい。例
えばコーニング社製フオトセラム（商品名）等の
ガラスセラミツク（結晶化ガラス）を用いること
ができる。この場合、保護板１４も同じものを用
いるのが好ましいのは言うまでもない。 Although a sapphire substrate was used as the nonmagnetic substrate in the above embodiment, other substrates may be used as long as they have good surface roughness and good thermal conductivity. In particular, the surface roughness is preferably 100 Å or less. For example, glass ceramic (crystallized glass) such as Photoceram (trade name) manufactured by Corning Corporation can be used. In this case, it goes without saying that it is preferable to use the same protection plate 14 as well.
発明の効果
本発明に依れば抗磁力Hcの比較的小さい磁気
抵抗効果膜４を安定に形成することができると共
に磁気テープ３の摺接面３ａより磁気抵抗効果膜
までの距離を比較的小さくすることができ、再生
磁気効率の良い磁気回路を得ることができ、従来
に比し感度を大幅に増大することができ、良好な
再生信号を得ることができる。更に熱雑音も低減
することができる。Effects of the Invention According to the present invention, the magnetoresistive film 4 having a relatively small coercive force Hc can be stably formed, and the distance from the sliding surface 3a of the magnetic tape 3 to the magnetoresistive film can be made relatively small. This makes it possible to obtain a magnetic circuit with high reproduction magnetic efficiency, greatly increase the sensitivity compared to the conventional one, and obtain a good reproduction signal. Furthermore, thermal noise can also be reduced.
第１図は従来の磁気抵抗効果型磁気ヘツドの例
を示す横断面図、第２図は第１図の−線断面
図、第３図は本発明磁気抵抗効果型磁気ヘツドの
一実施例を示す横断面図、第４図及び第５図は
夫々本発明の他の実施例を示す横断面図である。
３は磁気テープ、４は磁気抵抗効果膜、７は磁
気ギヤツプ、１０及び１４は夫々サフアイア基
板、１１ａ，１１ｂ，１１ｃは夫々絶縁層、１２
及び１３は夫夫一方及び他方のコア磁性体層であ
る。
FIG. 1 is a cross-sectional view showing an example of a conventional magnetoresistive magnetic head, FIG. 2 is a cross-sectional view taken along the line -- in FIG. 1, and FIG. 3 is an embodiment of the magnetoresistive magnetic head of the present invention. 4 and 5 are cross-sectional views showing other embodiments of the present invention, respectively. 3 is a magnetic tape, 4 is a magnetoresistive film, 7 is a magnetic gap, 10 and 14 are sapphire substrates, 11a, 11b, 11c are insulating layers, 12
and 13 are core magnetic layers on one side and the other side.
Claims (1)
摺接面とは離れた位置に磁気抵抗効果素子を形成
し、該磁気抵抗効果素子と磁気的に結合される第
１のコアと、上記磁気記録媒体摺接面に臨む磁気
ギヤツプを有する磁気回路を形成する如く第２の
コアを設けると共に上記磁気回路を上記非磁性基
板と挾む如くこの非磁性基板に対向する保護板を
設けたことを特徴とする磁気抵抗効果型磁気ヘツ
ド。1. A magnetoresistive element is formed on a non-magnetic substrate at a position away from the sliding contact surface of the magnetic recording medium of the non-magnetic substrate, and a first core magnetically coupled to the magnetoresistive element and the magnetic A second core is provided to form a magnetic circuit having a magnetic gap facing the sliding contact surface of the recording medium, and a protective plate is provided facing the non-magnetic substrate so as to sandwich the magnetic circuit with the non-magnetic substrate. Features a magnetoresistive magnetic head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13388182A JPS5924427A (en) | 1982-07-31 | 1982-07-31 | Magneto-resistance effect type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13388182A JPS5924427A (en) | 1982-07-31 | 1982-07-31 | Magneto-resistance effect type magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5924427A JPS5924427A (en) | 1984-02-08 |
| JPH0375930B2 true JPH0375930B2 (en) | 1991-12-03 |
Family
ID=15115262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13388182A Granted JPS5924427A (en) | 1982-07-31 | 1982-07-31 | Magneto-resistance effect type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5924427A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132215A (en) * | 1984-07-25 | 1986-02-14 | Hitachi Ltd | Magnetoresistance effect type head |
| JPS6266414A (en) * | 1985-09-19 | 1987-03-25 | Seiko Epson Corp | Magnetic head |
| JPS6337811A (en) * | 1986-07-30 | 1988-02-18 | Toshiba Corp | Yoke type magnetoresistance effect type thin film magnetic head |
-
1982
- 1982-07-31 JP JP13388182A patent/JPS5924427A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5924427A (en) | 1984-02-08 |
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