JPH0375855B2 - - Google Patents
Info
- Publication number
- JPH0375855B2 JPH0375855B2 JP27296788A JP27296788A JPH0375855B2 JP H0375855 B2 JPH0375855 B2 JP H0375855B2 JP 27296788 A JP27296788 A JP 27296788A JP 27296788 A JP27296788 A JP 27296788A JP H0375855 B2 JPH0375855 B2 JP H0375855B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- mask
- ion
- deflection electrode
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007547 defect Effects 0.000 claims description 40
- 238000010884 ion-beam technique Methods 0.000 claims description 40
- 230000002950 deficient Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 206010027146 Melanoderma Diseases 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Engineering & Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、LSI製造用マスクに存在する欠陥を
修正するマスクの欠陥修正方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a mask defect repair method for repairing defects existing in a mask for LSI manufacturing.
マスクを製作するとき、ごみやほこり等の影響
で第１図に示すように基板ガラス１の上につけら
れた正常なCrパターン２の中にCrが欠落した白
点欠陥を修正する方法として次のような方法が知
られている。即ち、第２図ａに示すようにフオト
レジスト４を塗布し、スポツト照射光５によつて
白点欠陥部分を選択的に露光し、現像すると露光
された部分だけが洗い流されて第２図ｂのように
なる。この上から追加Cr膜６をスパツタ蒸着し
て第２図ｃのようにしたのち、フオトレジスト４
を取り去ると、フオトレジスト４の上についてい
た追加Cr膜６は除かれ、白点欠陥部３をうめる
ように蒸着されていた追加Cr膜６の一部だけが
第２図ｄに示すように修正Cr膜７として残り、
白点欠陥の修正が完了する。
When manufacturing a mask, the following method is used to correct the white spot defect in which Cr is missing in a normal Cr pattern 2 formed on a substrate glass 1, as shown in Figure 1, due to the influence of dirt and dust. Such methods are known. That is, as shown in FIG. 2a, a photoresist 4 is applied, white spot defect areas are selectively exposed to spot irradiation light 5, and when developed, only the exposed areas are washed away, as shown in FIG. 2b. become that way. An additional Cr film 6 is sputter-deposited on top of this to form the structure shown in Fig. 2c, and then a photoresist 4 is applied.
When it is removed, the additional Cr film 6 that was on the photoresist 4 is removed, and only a part of the additional Cr film 6 that was deposited to fill the white spot defect 3 is corrected as shown in FIG. 2d. It remains as Cr film 7,
The correction of the white spot defect is completed.
また、従来技術として、特開昭51−76978号公
報、特開昭52−9508公報、及び特開公昭53−
24787号公報が知られていた。 In addition, as prior art, JP-A-51-76978, JP-A-52-9508, and JP-A-53-
Publication No. 24787 was known.
前記の方法は、白点欠陥の修正にしか使用でき
ないことと、ウエツトプロセスであるため、多く
の工程を要するなどの問題点がある。
The above-mentioned method has problems such as that it can only be used to correct white spot defects and that it requires many steps because it is a wet process.
また、従来のレーザによるフオトマスクの欠陥
修正方法では、熱加工であるため、微細な欠陥を
修正できないばかりでなく、基板へのダメージが
大きいという問題点があつた。 Furthermore, the conventional method for repairing photomask defects using a laser involves thermal processing, which not only makes it impossible to repair minute defects, but also causes significant damage to the substrate.
本発明の目的は、上記従来技術の問題点を解決
すべく、基板にダメージを与えるのを少なくして
マスクの微細な白点欠陥及び黒点欠陥について能
率よく修正できるようにしたマスクの欠陥修正方
法を提供するにある。 In order to solve the above-mentioned problems of the prior art, an object of the present invention is to provide a method for repairing defects in a mask, which is capable of efficiently repairing fine white spot defects and black spot defects on a mask while minimizing damage to the substrate. is to provide.
即ち、本発明は上記目的を達成するために、記
録手段に記録された欠陥番地情報に基いてマスク
を載置したテーブルを移動させて欠陥部分をイオ
ンビームのビーム軸に位置決めし、その後イオン
源から発したイオンビームをアパーチヤを通して
静電レンズで絞つて偏向電極で走査照射して２次
荷電粒子検出器によりマスクの欠陥箇所の画像を
検出し、検出された画像に基いて欠陥箇所を、イ
オンビームの走査領域として偏向電極を駆動する
走査電源に対して設定し、更に欠陥箇所の種類に
応じてイオンビーム強度と照射時間とを設定し、
該イオンビーム強度と照射時間とを設定した状態
で、イオン源から発したイオンビームをアパーチ
ヤを通して静電レンズで絞つて上記設定されたイ
オンビーム走査領域に偏向電極で走査照射してそ
の欠陥箇所を修正することを特徴とするマスクの
欠陥修正方法である。
That is, in order to achieve the above object, the present invention moves the table on which the mask is placed based on the defect address information recorded in the recording means to position the defective part on the beam axis of the ion beam, and then the ion source The ion beam emitted from the mask is focused by an electrostatic lens through an aperture, and scanned by a deflection electrode. An image of the defective part of the mask is detected by a secondary charged particle detector.Based on the detected image, the defective part is detected by ion beams. The beam scanning area is set for the scanning power supply that drives the deflection electrode, and the ion beam intensity and irradiation time are further set according to the type of defect location.
With the ion beam intensity and irradiation time set, the ion beam emitted from the ion source is focused by an electrostatic lens through an aperture, and the ion beam scanning area set above is scanned and irradiated with a deflection electrode to locate the defective location. A mask defect repair method is characterized in that the mask defect is repaired.
本発明は、記録手段に記録された欠陥番地情報
に基いてマスクを記載したテーブルを移動させて
欠陥部分をイオンビームのビーム軸に位置決め
し、その後イオン源から発したイオンビームをア
パーチヤを通して静電レンズで絞つて偏向電極で
走査照射して２次荷電粒子検出器によりマスクの
欠陥箇所の画像を検出し、検出された画像に基い
て欠陥箇所を、イオンビームの走査領域として偏
向電極を駆動する走査電源に対して設定し、更に
欠陥箇所の種類に応じてイオンビーム強度と照射
時間とを設定し、該イオンビーム強度と照射時間
とを設定した状態で、イオン源から発したイオン
ビームをアパーチヤを通して静電レンズで絞つて
上記設定されたイオンビーム走査領域に偏向電極
で走査照射してその欠陥箇所を修正するように構
成したので、マスクの白点及び黒点の各欠陥箇所
に合せて走査領域を設定でき、基板にダメージを
少なくして微細な白点及び黒点の欠陥修正を行う
ことができる。
The present invention moves a table on which a mask is written based on defect address information recorded in a recording means to position a defective part on the beam axis of an ion beam, and then passes an ion beam emitted from an ion source through an aperture to generate an electrostatic charge. Focus the ion beam with a lens, scan and irradiate with a deflection electrode, detect an image of the defective part of the mask with a secondary charged particle detector, and drive the deflection electrode to use the defective part as the scanning area of the ion beam based on the detected image. Set the scanning power supply, set the ion beam intensity and irradiation time according to the type of defect location, and set the ion beam intensity and irradiation time to the ion beam emitted from the ion source. The ion beam is focused through an electrostatic lens and scanned with a deflection electrode to irradiate the ion beam scanning area set above to correct the defective areas. can be set, and fine white and black dot defects can be corrected with less damage to the board.
以下本発明を図に示す実施例にもとづいて具体
的に説明する。第３図は本発明のフオト・マスク
の白点欠陥修正方法の一実施例を示す説明図であ
る。即ちイオン銃８から出たイオンビーム２５は
コンデンサレンズ（静電レンズ）９により一旦絞
られ、対物絞り（アパーチヤ）１０を通過し、偏
向電極１１で偏向されて、対物レンズ（静電レン
ズ）１３で集束されてXYテーブル１５の上にお
かれたフオト・マスク１４上に照射される。
The present invention will be specifically described below based on embodiments shown in the drawings. FIG. 3 is an explanatory diagram showing an embodiment of the method for correcting white spot defects on a photo mask according to the present invention. That is, the ion beam 25 emitted from the ion gun 8 is once condensed by a condenser lens (electrostatic lens) 9, passes through an objective aperture (aperture) 10, is deflected by a deflection electrode 11, and then passes through an objective lens (electrostatic lens) 13. The light is focused and irradiated onto a photo mask 14 placed on an XY table 15.
フオトマスク１４はシールド電極１６に覆われ
ており、イオンビームを照射された部分からは二
次荷電粒子が飛び出し、二次荷電粒子検出器１７
に補捉され、その信号は増幅器１８で増幅され、
CRT１９に送られ、偏向電極１１を駆動してい
る走査電源からの信号とともにCRT（表示手段）
１９のスクリーン上にフオトマスク７の欠陥部分
の表面状態が表示される。この表面状態は光学顕
微鏡２０によつて観察することもできる。フオ
ト・マスク１４の欠陥部分のビーム軸への位置出
しはXYテーブル制御部２１によつて行われ、こ
のXYテーブル制御部２１はフオト・マスク検出
機（図示せず）によつて得られたフオトマスクの
欠陥番地を記録したカセツト・テープ２２を装着
して駆動させる。 The photomask 14 is covered with a shield electrode 16, and secondary charged particles fly out from the part irradiated with the ion beam and are detected by the secondary charged particle detector 17.
The signal is amplified by an amplifier 18,
The CRT (display means) is sent to the CRT 19 along with the signal from the scanning power supply that drives the deflection electrode 11.
The surface condition of the defective portion of the photomask 7 is displayed on the screen 19. This surface state can also be observed using an optical microscope 20. The defective portion of the photo mask 14 is positioned on the beam axis by an XY table controller 21, and this XY table controller 21 detects the photo mask obtained by a photo mask detector (not shown). A cassette tape 22 with the defective address recorded thereon is loaded and driven.
この欠陥位置出し指令や、ビーム駆動電源２３
を通したイオン銃８からのイオンの発生やコンデ
ンサレンズ（静電レンズ）９、対物レンズ（静電
レンズ）１３の制御や走査電源１２による偏向電
極の駆動はすべてコントロール盤２４によつて行
うことができる。 This defect positioning command and the beam drive power source 23
Generation of ions from the ion gun 8 through the ion gun, control of the condenser lens (electrostatic lens) 9 and objective lens (electrostatic lens) 13, and driving of the deflection electrode by the scanning power supply 12 are all performed by the control panel 24. I can do it.
フオト・マスク修正の過程は次のようになる。
先ずカセツトテープ２２からの情報により欠陥部
分のビーム軸への位置出しを行なう。次にCRT
（表示手段）１９に表示された欠陥部分の画像を
見て、コントロール盤２４から偏向電極１１を駆
動する走査電源１２を制御して、偏向電極１１に
よる欠陥箇所への照射すべきイオンビーム２５の
走査範囲の設定位置合せを行なう。次にコントロ
ール盤２４は、ビーム駆動電源２３及び走査電源
１２を制御することによつて、欠陥の種類（黒点
欠陥か白点欠陥か）によつて必要なイオンビーム
強度と照射時間を設定し、最後にイオンビーム照
射のスタート・ボタンを押し、欠陥箇所への修正
が始まる。修正が完了すると、次の欠陥位置を呼
び出すボタンを押す。このようにしてテープに記
録された欠陥を順次修正していく。 The process of photo mask modification is as follows.
First, the defective portion is positioned on the beam axis based on information from the cassette tape 22. Then CRT
(Display means) Seeing the image of the defective part displayed on the display 19, the scanning power supply 12 for driving the deflection electrode 11 is controlled from the control panel 24, and the ion beam 25 to be irradiated to the defective part by the deflection electrode 11 is controlled. Set and align the scanning range. Next, the control panel 24 sets the necessary ion beam intensity and irradiation time depending on the type of defect (black spot defect or white spot defect) by controlling the beam drive power supply 23 and the scanning power supply 12. Finally, press the start button for ion beam irradiation to begin repairing the defective area. When the correction is completed, press the button to call the next defect position. In this way, defects recorded on the tape are successively corrected.
第４図は本発明のイオンビームによるフオトマ
スクの白点欠陥修正例の説明図である。第４図ａ
において、基板ガラス１の上の正常Crパターン
２の中にCrが欠落して発生した白点欠陥３にイ
オンビーム２５を照射することにより、第４図ｂ
に示すようにガラス面を２６で示すようにのこ波
状に荒らして投影した場合Cr膜があるのと同じ
ように影が生じるようにする。即ち基板ガラス１
が露出した部分を1μmピツチ程度で直線または網
目状のすじを入れるようにイオンビーム２５を走
査し、基板ガラス１の表面をのこ波状に加工す
る。また白点欠陥３が非常に小さい場合は、そこ
の部分にイオンビーム２５をスポツト照射する
と、第４図ｃに示すようにビームの強度分布（通
常ガラス分布）に対応した丸い深い堀り込み２７
ができ、同様に照明光を散乱させ、欠陥のない投
影像が得られる。このように２６または２７で示
されるように白点欠陥３が修正される。 FIG. 4 is an explanatory diagram of an example of correcting a white spot defect on a photomask using an ion beam according to the present invention. Figure 4a
By irradiating the white spot defect 3 caused by missing Cr in the normal Cr pattern 2 on the substrate glass 1 with the ion beam 25,
As shown in Figure 2, when the glass surface is roughened into a sawtooth shape as shown by 26 and projected, a shadow is created in the same way as when there is a Cr film. That is, the substrate glass 1
The ion beam 25 is scanned with the ion beam 25 so as to create straight or mesh-like streaks at a pitch of about 1 μm on the exposed portion, and the surface of the substrate glass 1 is processed into a sawtooth shape. In addition, if the white spot defect 3 is very small, when the ion beam 25 is spot irradiated on that part, a round deep groove 27 corresponding to the beam intensity distribution (normally glass distribution) is formed as shown in Fig. 4c.
Similarly, the illumination light is scattered and a defect-free projected image is obtained. In this way, the white spot defect 3 is corrected as indicated by 26 or 27.
なお残留欠陥である黒点欠陥も前記装置でCr
膜を除去するに必要なイオンビーム２５の照射時
間に設定し、残留Cr膜を覆う面積をイオンビー
ム２５で走査してやると除去修正できる。特に
Cr膜の除去速度は500Å／分程度であるので表面
から順に除去し、CRT１１でみながら除去が完
了するまでイオンビーム２５を照射する。 Note that residual defects such as black spot defects are also treated with Cr using the above device.
By setting the irradiation time of the ion beam 25 necessary to remove the film and scanning the area covering the residual Cr film with the ion beam 25, the removal correction can be performed. especially
Since the removal rate of the Cr film is about 500 Å/min, it is removed sequentially from the surface, and the ion beam 25 is irradiated with the ion beam 25 while viewing on the CRT 11 until the removal is completed.
以上説明したように本発明によれば、回路パタ
ーンの微細化にともなうマスクの極微細な白点及
び黒点の欠陥をドライ・プロセスでダメージを少
なくして修正できるようになり、大巾な工程数の
低減及び工数の短縮をはかれることができる顕著
な作用効果を奏する。
As explained above, according to the present invention, it is now possible to repair ultrafine white and black dot defects on masks due to miniaturization of circuit patterns by using a dry process with less damage, thereby reducing the number of process steps. The present invention has a remarkable effect of reducing the number of steps and the number of man-hours.
第１図はフオトマスクの白点欠陥を示す断面
図、第２図ａ，ｂ，ｃ，ｄは従来のフオトマスク
の白点欠陥修正方法を説明するための断面図、第
３図は本発明のフオトマスクの白点欠陥修正方法
を実施するための装置を示す概略構成図、第４図
ａ，ｂ，ｃは本発明のフオトマスクの白点欠陥修
正方法を説明するための断面図である。
１……ガラス基板、２……正常Crパターン、
３……白点欠陥、８……イオン銃、９……コンデ
ンサレンズ、１０……対物絞り、１１……偏向電
極、１２……走査電源、１３……対物レンズ、１
４……フオトマスク、１７……二次荷電粒子検出
器、１９……CRT、２５……イオンビーム。
FIG. 1 is a cross-sectional view showing a white spot defect on a photomask, FIGS. 2 a, b, c, and d are cross-sectional views illustrating a conventional white spot defect repair method for a photomask, and FIG. 3 is a photomask according to the present invention. FIGS. 4A, 4B, and 4C are cross-sectional views for explaining the method for correcting white dot defects on a photomask according to the present invention. 1...Glass substrate, 2...Normal Cr pattern,
3...White spot defect, 8...Ion gun, 9...Condenser lens, 10...Objective aperture, 11...Deflection electrode, 12...Scanning power source, 13...Objective lens, 1
4...Photomask, 17...Secondary charged particle detector, 19...CRT, 25...Ion beam.
Claims (1)
マスクを載置したテーブルを移動させて欠陥部分
をイオンビームのビーム軸に位置決めし、その後
イオン源から発したイオンビームをアパーチヤを
通して静電レンズで絞つて偏向電極で走査照射し
て２次荷電粒子検出器によりマスクの欠陥箇所の
画像を検出し、検出された画像に基いて欠陥箇所
を、イオンビームの走査領域として偏向電極を駆
動する走査電源に対して設定し、更に欠陥箇所の
種類に応じてイオンビーム強度と照射時間とを設
定し、該イオンビーム強度と照射時間とを設定し
た状態で、イオン源から発したイオンビームをア
パーチヤを通して静電レンズで絞つて上記設定さ
れたイオンビーム走査領域に偏向電極で走査照射
してその欠陥箇所を修正することを特徴とするマ
スクの欠陥修正方法。1 Based on the defect address information recorded in the recording means, move the table on which the mask is placed to position the defective part on the beam axis of the ion beam, and then pass the ion beam emitted from the ion source through the aperture using an electrostatic lens. A scanning power supply that drives the deflection electrode to scan and irradiate the ion beam with a deflection electrode, detect an image of the defective part of the mask with a secondary charged particle detector, and use the detected image as the scanning area of the ion beam. The ion beam intensity and irradiation time are set according to the type of defect location, and with the ion beam intensity and irradiation time set, the ion beam emitted from the ion source is passed through the aperture in a static state. A method for repairing defects in a mask, which comprises focusing the ion beam using an electric lens and scanning and irradiating the set ion beam scanning area with a deflection electrode to correct the defective location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272967A JPH01158450A (en) | 1988-10-31 | 1988-10-31 | Defect correcting method for mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272967A JPH01158450A (en) | 1988-10-31 | 1988-10-31 | Defect correcting method for mask |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61213821A Division JPS6285253A (en) | 1986-09-12 | 1986-09-12 | Correcting method for defect of mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01158450A JPH01158450A (en) | 1989-06-21 |
| JPH0375855B2 true JPH0375855B2 (en) | 1991-12-03 |
Family
ID=17521286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63272967A Granted JPH01158450A (en) | 1988-10-31 | 1988-10-31 | Defect correcting method for mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01158450A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2025320A1 (en) | 2007-08-10 | 2009-02-18 | L'Oréal | Assembly for packaging and applying a high-viscosity nail varnish |
-
1988
- 1988-10-31 JP JP63272967A patent/JPH01158450A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01158450A (en) | 1989-06-21 |
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