JP2561933B2 - Pattern film repair device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask and reticle for manufacturing integrated circuits and the like, and an apparatus for pattern correction of a semiconductor integrated circuit itself.

[Outline of Invention]

A predetermined location on the surface of the sample on which the pattern film is formed on the substrate is irradiated while repeatedly scanning the focused ion beam, and the irradiation position is further sprayed with an organic compound vapor or an etching gas, In a pattern film correction device for forming a pattern film or removing a pattern film, a light source is provided coaxially with an organic compound vapor or etching gas blowing axis, and the light is applied to the sample surface,
The pattern film correction device detects the reflected light and blows an organic compound vapor or an etching gas to detect the position of the device and the sample surface.

[Conventional technology]

The conventional pattern film repairing device has a structure in which the position of the sample surface is mechanically always fixed, and the nozzle tip of the device for spraying the organic compound vapor is mechanically positioned so as to be a constant distance from the sample surface position. It was fixed in place.

[Problems to be solved by the invention]

Conventionally, the position of the sample surface and the nozzle tip position of the device that sprays the organic compound vapor were both set mechanically, so structural looseness, distortion, or warpage of the sample caused each sample over time. In some cases, the distance between the tip of the nozzle of the device that blows the organic compound vapor and the position of the sample surface may change. Since the nozzle of the device that sprays the organic compound vapor or etching gas is sprayed obliquely, a specified amount of organic compound vapor or etching gas is sprayed at the focused ion beam irradiation position on the sample surface due to the change in this distance. However, the amount of the organic compound vapor deviating from the prescribed amount or the etching gas is blown to the position deviated from the focused ion beam irradiation position.

[Means for solving problems]

A predetermined location on the surface of the sample on which the pattern film is formed on the substrate is irradiated while repeatedly scanning the focused ion beam, and the irradiation position is further sprayed with an organic compound vapor or an etching gas, In a pattern film correction device for forming a pattern film or removing a pattern film, a light source is provided coaxially with an organic compound vapor or etching gas blowing axis, and the light is applied to the sample surface,
By detecting the reflected light and blowing the organic compound vapor or the etching gas to detect the positions of the device and the sample surface, the positional deviation is detected, and then the position is corrected.

[Action]

A light source is provided coaxially with the spray axis of the organic compound vapor or etching gas, the light is applied to the sample surface, and the reflected light is detected by a position detector to spray the organic compound vapor at the nozzle tip. If the distance between the sample surface position and the sample surface position deviates from the specified distance, the reflected light irradiated to the position detector will deviate from the normal irradiation position, so the distance between the nozzle tip of the device that blows the organic compound vapor and the sample surface position. Deviation can be detected.

〔Example〕

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is an overall configuration diagram of a pattern film correcting device according to the present invention. The ions generated from the ion source 1 pass through the ion lens system of the focusing lens 2 and the objective lens 3, whereby the ions are focused and become the focused ion beam 5. Further, the ion beam passes through the scanning electrode 4 to irradiate the focused ion beam while scanning the surface of the sample 6.

By the focused ion beam irradiation, the secondary charged particles 8 emitted from the surface of the sample 6 are detected by the secondary charged particle detector 9,
When the A / D converter 10 and the like are electrically processed and the scanning is displayed on the display device 11 in synchronization with the scanning of the focused ion beam 5, the sample 6
The status of elements on the surface of is displayed. The XY stage 7 is moved according to the surface condition of the sample 6 displayed on the display device 11 and the preset data for the XY stage 7,
The desired position of the sample 6 is set within the scanning range of the focused ion beam 5.

From the tip of the nozzle 21 to the sample surface, an organic compound vapor containing carbon when forming a pattern film, and a chemical etching property which is accelerated by ion beam irradiation when removing the pattern film formed on the sample surface. A certain etching gas is blown to form or remove the pattern film to correct the pattern film. At this time, the focused ion beam 5 is microscopically bent by the scanning electrode 4 and does not hit the surface of the sample 6 perpendicularly, but macroscopically, the focused ion beam 5 is slightly deflected by the scanning electrode. For,
It hits the surface of the sample 6 substantially vertically. When the irradiation position of the nozzle 21 and the focused ion beam 5 and the surface position of the sample 6 are at predetermined positions, the focused ion beam 5 and the spraying position of vapor or gas coincide with each other on the surface of the sample 6 as shown in FIG. To do. Here, a light source 23 is provided on an extension line of the axis of the hole 22 of the nozzle 21 which is opposite to the nozzle tip direction, and the light passes coaxially with the axis of vapor or gas spraying. This light is reflected on the surface of the sample 6 and strikes the position detector 24. Light emitted from light source 23
As shown in FIG. 2, 23a reaches the sample surface through the same process as steam or gas. When the focused ion beam 5 and the light 23a coincide on the surface of the sample 6, the irradiation point of the light 23a on the position detector 24 is 24a. Here, when the surface of the sample 6 is above FIG. 2 as in FIG. 3, the irradiation point on the position detector 24 is 24b, and when the surface of the sample 6 is below FIG. ,
The irradiation point on the position detector 24 is irradiated to 24c. In other words, by detecting the irradiation point of the light 23a on the position detector 24, it is possible to detect the deviation of the position / distance between the nozzle 21 and the surface of the sample 6.

The light source is an optical fiber as shown in Fig. 2.
Can be bent. The blanking electrode shown in Fig. 1
Numeral 12 is for activating the ion beam to the sample 6 when it is not desired to irradiate the sample 6, and for smashing the beam 5 to the outside.

〔effect〕

A light source is provided coaxially with the spray axis of the organic compound vapor or etching gas, the light is applied to the sample surface, and the reflected light is detected by a position detector to spray the organic compound vapor at the nozzle tip. If the distance between the sample surface position and the sample surface position deviates from the specified distance, the reflected light irradiated to the position detector will deviate from the normal irradiation position, so the distance between the nozzle tip of the device that blows the organic compound vapor and the sample surface position. Deviation can be detected.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of the present invention, FIG. 2 is a cross-sectional view of a main part, and FIG. 3 is a cross-sectional view of a main part showing a shift of light. 1 ... Ion source, 2 ... Focusing lens, 3 ... Objective lens, 4 ... Scan electrode, 5 ... Focused ion beam, 6 ...
Sample, 8 ... Secondary charged particles, 9 ... Secondary charged particle detector, 10 ... D / A converter, 11 ... Display device, 21 ... Nozzle, 22 ... Hole, 23 ... Light source, 23a …… light, 23b …… optical fiber, 24 …… position detector

Claims (2)

(57) [Claims] 1. An ion source that generates ions, an ion lens system that uses the ions as a focused ion beam, a scanning electrode that irradiates a sample while scanning the focused ion beam, and a beam emitted from the surface of the sample. A secondary charged particle detector for detecting secondary charged particles; an image display device for displaying a pattern formed on a sample surface based on a plane intensity distribution of the secondary charged particles; An XY stage moving in a plane direction, and a blowing device for locally blowing an etching gas having an organic compound vapor or a chemical etching action to the focused ion beam irradiation position on the sample surface,
A pattern film repairing device for repairing a pattern film formed on the surface of a sample, further comprising a nozzle hole for locally spraying an organic compound vapor of the spraying device or an etching gas having a chemical etching action. A light source that is provided above and applies light to the sample surface through the hole of the nozzle, and a position detector that detects reflected light in which light from the light source is reflected on the sample surface, the nozzle tip and the sample surface. An apparatus for correcting a pattern film, which is characterized by measuring the distance between the two. 2. The method according to claim 1, wherein when the measured distance between the nozzle tip and the sample surface is out of the set range, an alarm is issued and the spraying of the organic compound vapor or etching gas is stopped. The pattern film repairing device described.