JPH0375394A - Plating equipment - Google Patents

Plating equipment

Info

Publication number
JPH0375394A
JPH0375394A JP21347189A JP21347189A JPH0375394A JP H0375394 A JPH0375394 A JP H0375394A JP 21347189 A JP21347189 A JP 21347189A JP 21347189 A JP21347189 A JP 21347189A JP H0375394 A JPH0375394 A JP H0375394A
Authority
JP
Japan
Prior art keywords
wafer
tray
cup
electrode
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21347189A
Other languages
Japanese (ja)
Inventor
Yasuo Arima
康雄 有馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21347189A priority Critical patent/JPH0375394A/en
Publication of JPH0375394A publication Critical patent/JPH0375394A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily perform alignment of a pad on a wafer and the electrode of a plating equipment by equipping both the electrode allowed to abut against the pad and a pincher for holding the wafer to a tray, attaching and detaching this tray to/from a cup. CONSTITUTION:This equipment is constituted so that a wafer 3 is fitted to a tray 6 provided separately from a cup 1 and this tray 1 is provided to the upper edge of the cup 1. Therefore alignment of both an electrode 8a provided to the tray 6 and a pad 4 on the wafer 3 can be easily performed while viewing the positions thereof. Further when a plurality of trays 6 are prepared for the cup 1 and the successive wafer 5 is fitted to the other tray 6 while plating is progressed, plating work can be quickly restarted only by providing the fresh tray 6 to the cup 1. Therefore throughput can be enhanced and also generation of imperfect bump due to the imperfect contact of the electrode 8a and the pad 4 can be previously prevented.

Description

【発明の詳細な説明】 [11要] 半導体装置を形成するためのウェハにバンプをメッキす
るメッキ装置に関し、 ウェハ上のパッドとメッキ装置の電極とを容易に位置合
わせ可能とすることを目的とし、メッキ液を貯留したカ
ップの上縁にウェハを設置するとともにウェハに設けら
れたパッドに電極を接続し、そのウェハにメッキ液を噴
出してウェハ表面にバンプをメッキするメッキ装置であ
って、パッドに当接する電極と、その電極をパッドに当
接させた状態でウェハを保持する挟着装置とを備えたト
レイをカップに着脱可能として構成する。
[Detailed Description of the Invention] [11 Requirements] An object of the present invention is to provide a plating device for plating bumps on a wafer for forming semiconductor devices, and to enable easy alignment of pads on the wafer and electrodes of the plating device. , a plating apparatus that places a wafer on the upper edge of a cup storing a plating solution, connects an electrode to a pad provided on the wafer, and sprays the plating solution onto the wafer to plate bumps on the wafer surface, A tray including an electrode that contacts a pad and a clamping device that holds a wafer with the electrode in contact with the pad is configured to be removably attached to the cup.

[産業上の利用分野] この発明は半導体装置を形成するためのウェハにバンプ
をメッキするメッキ装置に関するものである。
[Industrial Application Field] The present invention relates to a plating apparatus for plating bumps on wafers for forming semiconductor devices.

近年、半導体装置の製造工程においてチップとパッケー
ジとの間の配線をワイヤボンディングに、代えてTA 
B (Tape AutoIlated Bondin
g)方式の配線構造が実用化されている。TABによる
配線構造ではチップの基板上において所定位置にバンプ
を形成する必要があり、このバンプは通常台あるいはハ
ンダ等をメッキ装置でウェハの所定位置にメッキして形
成されている。
In recent years, wire bonding has been replaced by TA for wiring between chips and packages in the manufacturing process of semiconductor devices.
B (Tape AutoIlated Bondin
g) The wiring structure of the method has been put into practical use. In the TAB wiring structure, it is necessary to form bumps at predetermined positions on the substrate of the chip, and these bumps are usually formed by plating the wafer at predetermined positions with a stand or solder using a plating device.

[従来の技術] ウェハ上に金のバンプを形成するための従来のメッキ装
置の概略を第5図に従って説明すると、メッキ液1aを
貯留する力ツブ1の上縁には例えば3か所に電極2が設
けられ、その電l#12の両端はカップ1の内外でそれ
ぞれ上方に屈曲して内側端2a及び外測端2bが形成さ
れている。また、各電極2の内III端2端間8間離は
メッキするウェハ3にあらかじめ形成されるパッド4間
の距離に合わせて設定されている。
[Prior Art] The outline of a conventional plating apparatus for forming gold bumps on a wafer will be explained with reference to FIG. 2 is provided, and both ends of the wire #12 are bent upwardly inside and outside the cup 1, respectively, to form an inner end 2a and an outer measuring end 2b. Further, the distance of 8 between the III ends of each electrode 2 is set in accordance with the distance between the pads 4 formed in advance on the wafer 3 to be plated.

このメッキ装置でバンプをメッキするには、あらかじめ
パッド4を形成するとともにフォトレジストでバンプ形
成位置をバターニングしたウェハ3の表面を下方として
そのパッド4に電極2の内側f12aを当接させて同ウ
ェハ3を電極2上に支持した後、カップ1に蓋〈図示し
ない)を被せてウェハ3をこの状態に保持し、さらに電
極2の外側端2bにはマイナスl111電源端子を接続
し、カップ1内のメッキ液la中にはプラス側電源端子
を浸す、この状態でカップ1内の噴出管5からメッキ液
1aをウェハ3表面に噴出させると、フォトレジストに
よるパターニングに基いてウェハ3表面の所定位置にバ
ンプがメッキされる。
To plate a bump with this plating apparatus, a pad 4 is formed in advance, and the surface of the wafer 3, on which bump formation positions are patterned with photoresist, is brought into contact with the inner side f12a of the electrode 2 against the pad 4, with the surface of the wafer 3 facing downward. After supporting the wafer 3 on the electrode 2, cover the cup 1 with a lid (not shown) to hold the wafer 3 in this state, and connect the negative l111 power terminal to the outer end 2b of the electrode 2. The positive power supply terminal is immersed in the plating solution la inside the cup 1. In this state, when the plating solution 1a is jetted onto the surface of the wafer 3 from the spout tube 5 inside the cup 1, the surface of the wafer 3 is formed into a predetermined shape based on the patterning by the photoresist. Bumps are plated at the locations.

[発明が解決しようとする課題] ところが、上記のようなメッキ装置ではウェハ3表面を
下方に向けた状態で電極2に支持させる必要があり、電
極2上に支持されるウェハ3とカップ上縁との間隙が小
さく、かつパッド4も小面積であるため、電極2の内側
端2aに対しウェハ3表面のパッド4を確実に当接させ
るように位置決めすることは極めて煩雑な作業であり、
スルプツトを低下させる原因となっていた。また、電極
2の内側端2aとパッド4との接触が不十分であると、
充分な厚さのバンプをメッキすることができず、ウェハ
3各部にメッキされるバンプの厚さが不揃いとなる等の
問題点があった。
[Problems to be Solved by the Invention] However, in the above plating apparatus, it is necessary to support the wafer 3 on the electrode 2 with the surface facing downward, and the wafer 3 supported on the electrode 2 and the upper edge of the cup are Since the gap between the wafer 3 and the wafer 3 is small, and the pad 4 has a small area, it is extremely troublesome to position the pad 4 on the surface of the wafer 3 so that it is in reliable contact with the inner end 2a of the electrode 2.
This caused a decrease in output. Furthermore, if the contact between the inner end 2a of the electrode 2 and the pad 4 is insufficient,
There are problems in that bumps of sufficient thickness cannot be plated, and the thicknesses of the bumps plated on various parts of the wafer 3 become uneven.

この発明の目的は、ウェハ上のパッドとメッキ装置の電
極との位置合わせを容易に行い得るメッキ装置を提供す
るにある。
An object of the present invention is to provide a plating apparatus that can easily align pads on a wafer and electrodes of the plating apparatus.

「課題を解決するための手段] 第1図は本発明の原理説明図である。すなわち、メッキ
液1aを貯留したカップ1の上縁にウェハ3を設置する
とともにウェハ3に設けられたパッド4に電極8aを接
続し、そのウェハ3にメッキ液1aを噴出してウェハ3
表面にバンプをメッキするメッキ装置が構成される。そ
して、パッド4に当接する電極8aと、その′rrh極
8a全8aド4に当接させた状態でウェハ3を保持する
挟着装置16とを備えたトレイ6がカップ1に着脱可能
に構成されている。
"Means for Solving the Problems" FIG. 1 is an explanatory diagram of the principle of the present invention. That is, a wafer 3 is placed on the upper edge of a cup 1 in which a plating solution 1a is stored, and a pad 4 provided on the wafer 3 is The electrode 8a is connected to the wafer 3, and the plating solution 1a is spouted onto the wafer 3.
A plating device is configured to plate bumps on the surface. A tray 6 is configured to be removably attached to the cup 1, and includes an electrode 8a that contacts the pad 4, and a clamping device 16 that holds the wafer 3 in contact with the entire 'rrh electrode 8a. has been done.

[作用] ウェハ3はその表面に形成されたパッド4の位置を確認
しながらトレイ6の電極8aに位置合わせ可能であり、
挟着装置16でウェハ3を保持したトレイ6をカップ1
上縁に取着することによりウェハ3がカップ1上縁に設
置される。
[Function] The wafer 3 can be aligned with the electrode 8a of the tray 6 while checking the position of the pad 4 formed on its surface.
The tray 6 holding the wafer 3 is placed in the cup 1 by the clamping device 16.
The wafer 3 is placed on the upper edge of the cup 1 by attaching it to the upper edge.

[実施例] 以下、この発明を具体化した実施例を第2図〜・第4図
に従って説明する。なお、前記従来例と同一構成部分は
同一番号を付して説明する。
[Example] Hereinafter, an example embodying the present invention will be described with reference to FIGS. 2 to 4. Note that the same components as those in the conventional example will be described with the same numbers.

第2図及び第3図に示す長板状のトレイ6は2か所に前
期ウェハ3よりやや小径の取付孔7が形成され、その取
付孔7の周囲には3か所にThN棒8が同トレイ6の厚
さ方向に移動可能に貫通されている。Q!:h掻棒8の
先端部はトレイ6に沿って屈曲されるとともにさらにト
レイ6表面に向かって屈曲されて電極8aが形成されて
いる。そして、各電′ai8aの間隔はウェハ3上のパ
ッド4の間隔と等しく設定されている。
The elongated tray 6 shown in FIGS. 2 and 3 has two mounting holes 7 with a diameter slightly smaller than that of the previous wafer 3, and ThN rods 8 are formed at three locations around the mounting holes 7. The tray 6 is penetrated so as to be movable in the thickness direction. Q! :h The tip of the scraper 8 is bent along the tray 6 and further bent toward the surface of the tray 6 to form an electrode 8a. The spacing between the pads 4a on the wafer 3 is set equal to the spacing between the pads 4 on the wafer 3.

トレイ6裏面に突出する電極棒8は同トレイ6から延び
る支持片9を貫通し、その支持片9とトレイロ裏面との
間においてフランジ10が形成され、そのフランジ10
とトレイ6裏面との間にコイルスプリング11が配設さ
れている。そして、コイルスプリング11はトレイ6裏
面を支点としてフランジ10を支持片9方向へ付勢する
ため、ウェハ3を取付けない状態ではフランジ10は支
持片9に当接し、電極8aは取付孔7内に突出するよう
になっている。
The electrode rod 8 protruding from the back surface of the tray 6 passes through a support piece 9 extending from the tray 6, and a flange 10 is formed between the support piece 9 and the back surface of the tray.
A coil spring 11 is disposed between the tray 6 and the rear surface of the tray 6. The coil spring 11 uses the back surface of the tray 6 as a fulcrum to bias the flange 10 in the direction of the support piece 9, so when the wafer 3 is not attached, the flange 10 comes into contact with the support piece 9, and the electrode 8a is inserted into the mounting hole 7. It's starting to stand out.

このようなトレイ6を使用して第4図に示すメッキ装置
でウェハ3にパン1をメッキするには、まずトレイ6の
t掻棒8の基端をコイルスプリング11の付勢力に抗し
て押し上げて電i8aとトレイ6表面との間にウェハ3
の厚み以上の間隙を確保し、その状態でqIj&#18
 aとトレイ6表面との間にウェハ3を挿入する。そし
て、ウェハ3上のパッド4を電極8aに位置合わせして
電極棒8の押し上げを解除すると、第2図に示すように
電極8aがバッド4に当接し、コイルスプリング11の
付勢力により同型[i8aでウェハ3が取付孔7周囲に
押付けられた状態で保持される。
In order to plate the wafer 3 with the bread 1 using such a tray 6 in the plating apparatus shown in FIG. Push up and place the wafer 3 between the i8a and the surface of the tray 6.
Ensure a gap of at least the thickness of
Wafer 3 is inserted between a and the surface of tray 6. Then, when the pad 4 on the wafer 3 is aligned with the electrode 8a and the pushing up of the electrode rod 8 is released, the electrode 8a comes into contact with the pad 4 as shown in FIG. At i8a, the wafer 3 is held in a pressed state around the attachment hole 7.

この状態でトレイ6を裏返しにして第4図に示すように
カップ1の上縁に設置し、そのトレイ6をカップ1上に
保持する蓋12を被せる。益12には電@棒8をマイナ
ス開電源端子に接続するコネクタ13が設けられるとと
もに、ウェハ3s面に向かってN2ガスを噴出するガス
噴出管14が設けられている。カップ1内にはプラス側
電源端子に接続される網状の陽f!15が浸されている
In this state, the tray 6 is turned over and placed on the upper edge of the cup 1 as shown in FIG. 4, and the lid 12 that holds the tray 6 on the cup 1 is covered. The connector 12 is provided with a connector 13 for connecting the electric rod 8 to a negative open power terminal, and is also provided with a gas ejection pipe 14 for ejecting N2 gas toward the surface of the wafer 3s. Inside the cup 1 is a net-shaped positive f! connected to the positive power terminal. 15 are soaked.

そして、このような状態でメッキ液1aが噴出管5から
ウェハ3表面に向かって噴出されると、ウェハ3表面に
形成されたパターニングに基いてバンプがメッキされ、
ウェハ3とトレイ6との間隙からのウェハ3裏面へのメ
ッキ8N1aの漏れはガス噴出管14から噴出されるN
2ガスにより抑えられる。
When the plating solution 1a is ejected from the ejection tube 5 toward the surface of the wafer 3 in this state, bumps are plated based on the patterning formed on the surface of the wafer 3.
The leakage of the plating 8N1a from the gap between the wafer 3 and the tray 6 to the back surface of the wafer 3 is caused by the N jetted out from the gas jetting pipe 14.
This can be suppressed by 2 gases.

以上のようにこのメッキ装置では、カップ]とは別体に
設けられたトレイ6にウェハ3を取付け、そのトレイ6
をカップ1上縁に設置する構成であるため、トレイ6に
設けられた@極8aとウェハ3上のバッド4との位置合
わせはそれらの位置を視認しながら容易に行なうことが
できる。また、カップ1に対し複数のトレイ6を用意す
れば、メッキ進行中に後続のウェハ3を別のトレイ6に
取付けておけば、その新たなトレイ6をカップ1に設置
するだけで速やかにメッキ作業を再開することができる
。従って、スループットを向上させることができるとと
もに、電極8aとバッド4との接触不良によるバンプの
不良発生を未然に防止することができる。
As described above, in this plating apparatus, the wafer 3 is mounted on the tray 6 provided separately from the cup, and the wafer 3 is mounted on the tray 6 provided separately from the cup.
Since the electrodes 8a are installed on the upper edge of the cup 1, alignment of the @poles 8a provided on the tray 6 and the pads 4 on the wafer 3 can be easily performed while visually checking their positions. In addition, if multiple trays 6 are prepared for cup 1, if the subsequent wafer 3 is attached to another tray 6 while plating is in progress, plating can be performed immediately by simply installing the new tray 6 in cup 1. You can resume your work. Therefore, throughput can be improved, and occurrence of bump defects due to poor contact between the electrodes 8a and the pads 4 can be prevented.

[発明の効果] 以上詳述したように、この発明はウェハ上のパッドとメ
ッキ装置の電極との位置合わせを容易に行うことができ
る優れた効果を発揮する。
[Effects of the Invention] As described in detail above, the present invention exhibits an excellent effect of easily aligning pads on a wafer and electrodes of a plating apparatus.

略図、 第5図は従来のメッキ装置の概略図である。Schematic diagram, FIG. 5 is a schematic diagram of a conventional plating apparatus.

図中、 1はカップ、 1aはメッキ液、 3はウェハ、 4はパッド、 6はトレイ、 8aは電極、 16は挟着装置である。In the figure, 1 is a cup, 1a is a plating solution, 3 is a wafer, 4 is a pad, 6 is a tray, 8a is an electrode; 16 is a clamping device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理説明図、 第2図は本発明の実施例のトレイを示す断面図、第3図
はそのトレイの斜視図、 第4図はそのトレイを装着したメッキ装置の概第 1 
図 本発明の原理説明図 第2図 本発明の実施例のトレイを示す断面図 第 図 本発明の実:mwのメッキ装置を示す概略図第 3 図 トレイの斜視図 第5図 従来のメッキ装置の概略図 日
Fig. 1 is a diagram explaining the principle of the present invention, Fig. 2 is a sectional view showing a tray according to an embodiment of the invention, Fig. 3 is a perspective view of the tray, and Fig. 4 is a schematic diagram of a plating apparatus equipped with the tray. 1st
Figure 2: A cross-sectional view showing a tray according to an embodiment of the present invention Figure 3: Schematic diagram showing a mw plating apparatus according to the present invention Figure 3: Perspective view of a tray Figure 5: Conventional plating apparatus Schematic diagram of the date

Claims (1)

【特許請求の範囲】 1、メッキ液(1a)を貯留したカップ(1)の上縁に
ウェハ(3)を設置するとともにウェハ(3)に設けら
れたパッド(4)に電極(Ba)を接続し、そのウェハ
(3)にメッキ液(1a)を噴出してウェハ(3)表面
にバンプをメッキするメッキ装置であって、 パッド(4)に当接する電極(8a)と、その電極(8
a)をパッド(4)に当接させた状態でウェハ(3)を
保持する挟着装置(16)とを備えたトレイ(6)をカ
ップ(1)に着脱可能としたことを特徴とするメッキ装
置。
[Claims] 1. A wafer (3) is placed on the upper edge of a cup (1) storing a plating solution (1a), and an electrode (Ba) is attached to a pad (4) provided on the wafer (3). This is a plating device for plating bumps on the surface of a wafer (3) by spouting a plating solution (1a) onto the wafer (3), and comprising: an electrode (8a) in contact with a pad (4); 8
A tray (6) equipped with a clamping device (16) that holds the wafer (3) in a state where the wafer (3) is in contact with the pad (4) is detachable from the cup (1). plating equipment.
JP21347189A 1989-08-18 1989-08-18 Plating equipment Pending JPH0375394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21347189A JPH0375394A (en) 1989-08-18 1989-08-18 Plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21347189A JPH0375394A (en) 1989-08-18 1989-08-18 Plating equipment

Publications (1)

Publication Number Publication Date
JPH0375394A true JPH0375394A (en) 1991-03-29

Family

ID=16639754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21347189A Pending JPH0375394A (en) 1989-08-18 1989-08-18 Plating equipment

Country Status (1)

Country Link
JP (1) JPH0375394A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2799578A1 (en) * 1999-10-08 2001-04-13 St Microelectronics Sa Integrated circuit container electrical connection method having upper protection layer gap revealing metallic pad and metallic deposition shape covering protection walls/holding solder blob connection.
JP2007119923A (en) * 1998-11-28 2007-05-17 Acm Research Inc Methods and apparatus for holding and positioning semiconductor workpiece during electropolishing and/or electroplating of the workpiece

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007119923A (en) * 1998-11-28 2007-05-17 Acm Research Inc Methods and apparatus for holding and positioning semiconductor workpiece during electropolishing and/or electroplating of the workpiece
FR2799578A1 (en) * 1999-10-08 2001-04-13 St Microelectronics Sa Integrated circuit container electrical connection method having upper protection layer gap revealing metallic pad and metallic deposition shape covering protection walls/holding solder blob connection.
US6528407B1 (en) 1999-10-08 2003-03-04 Stmicroelectronics S.A. Process for producing electrical-connections on a semiconductor package, and semiconductor package

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