JPH0374829B2 - - Google Patents
Info
- Publication number
- JPH0374829B2 JPH0374829B2 JP14140384A JP14140384A JPH0374829B2 JP H0374829 B2 JPH0374829 B2 JP H0374829B2 JP 14140384 A JP14140384 A JP 14140384A JP 14140384 A JP14140384 A JP 14140384A JP H0374829 B2 JPH0374829 B2 JP H0374829B2
- Authority
- JP
- Japan
- Prior art keywords
- stripping
- photoresist
- methylene chloride
- present
- alcohols
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 150000001298 alcohols Chemical class 0.000 claims description 8
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 150000002118 epoxides Chemical class 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 229940043279 diisopropylamine Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 2
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- RBACIKXCRWGCBB-UHFFFAOYSA-N 1,2-Epoxybutane Chemical compound CCC1CO1 RBACIKXCRWGCBB-UHFFFAOYSA-N 0.000 description 1
- PQXKWPLDPFFDJP-UHFFFAOYSA-N 2,3-dimethyloxirane Chemical compound CC1OC1C PQXKWPLDPFFDJP-UHFFFAOYSA-N 0.000 description 1
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 1
- PPWHTZKZQNXVAE-UHFFFAOYSA-N Tetracaine hydrochloride Chemical compound Cl.CCCCNC1=CC=C(C(=O)OCCN(C)C)C=C1 PPWHTZKZQNXVAE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229920003211 cis-1,4-polyisoprene Polymers 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- IWVKTOUOPHGZRX-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.COC(=O)C(C)=C IWVKTOUOPHGZRX-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
Description
本発明は、剥離性能が改良されたフオトレジス
ト剥離剤に関する。
各種部品を搭載し、接続する配線を絶縁体上に
配線図形で作成したプリント配線板は、片面、両
面、又は多層配線板等各種の形体が知られてい
る。プリント配線板のパターン作成には、パター
ン密度が高い場合、スクリーン印刷法よりもフオ
トレジストを用いた写真法が好ましいとされてい
る。フオトレジストは露光→現像→エツチング等
の工程を経て最終的にはすべて剥離することが必
要である。このようなフオトレジストの剥離剤に
は特公昭52−45241号公報に記載された塩化メチ
レン及びメタノールの混合物が知られている。プ
リント配線板の製造工程は10種以上に及ぶため、
各種工程の簡略化あるいはスピードアツプによ
り、生産性を向上させる努力がされている。フオ
トレジスト剥離工程においては、その剥離スピー
ドを上げるため、剥離力の向上が望まれている。
本発明は、このような要請に答えるためフオト
レジスト剥離能力の高いフオトレジスト剥離剤を
新規に提供するものであり、塩化メチレン、アル
コール類及び１，２−ジクロルエタンを必須成分
とするものである。
本発明のフオトレジスト剥離剤中の塩化メチレ
ン及びアルコール類に配合割合は合計で90wt％
以上、好ましくは95wt％以上が適当である。こ
れ以下であると充分なフオトレジストの剥離能力
が得られない。塩化メチレンとアルコール類の配
合比は、両者の共沸組成となる配合比付近を選択
することが好ましいが、実質的に不燃性とする必
要があり、引火性のアルコール類は引火点のない
塩化メチレンに対し少量とすることも重要であ
る。例えば、塩化メチレンとメタノールでは約
13：１、塩化メチレンとイソプロパノールでは約
12：１の配合比において共沸組成を形成し、実質
的に不燃性で問題はないが、エタノールでは
95wt％以上必要であり、むしろ共沸組成は好ま
しくない。共沸組成あるいはその付近での使用
は、蒸留再生使用時に、組成比変動が大きくなら
ず、剥離性能を一定に保てる利点がある。通常は
塩化メチレンとアルコール類の配合比を７：１〜
25：１とすればよい。その他のアルコール類の好
適例には、ｎ−プロピルアルコール、ｎ−ブチル
アルコール、イソブチルアルコール、第２ブチル
アルコール、第３ブチルアルコール等の低級アル
コール類がある。これらのアルコール類は、本発
明の目的を阻害しない限り、２種以上混合使用す
ることもできる。
本発明の剥離剤は、塩化メチレン及びアルコー
ル類に、１，２−ジクロルエタンを0.2〜7wt％、
好ましくは0.5〜5wt％配合したものであり、剥離
性能が向上し、剥離スピードを上げることができ
る。１，２−ジクロルエタンは、メタノールやイ
ソプロパノールと同程度の引火点を有するもの
の、塩化メチレンに対する配合量はこれらのアル
コールよりも少量の添加で効果があり、１，２−
ジクロルエタンの添加によつても、実質的に不燃
性とすることができる。
プリント配線板の絶縁部は、エポキシ樹脂やフ
エノール樹脂と紙やガラス繊維等との複合材から
形成されている。又、配線板の表面メツキには、
スズ−鉛メツキ、銅メツキ、あるいはニツケルを
下地とした金メツキ等が用いられている。フオト
レジスト剥離剤はこれらのプリント配線板を構成
する各種材質に悪影響を与えず、又剥離材自身
も、特に金属等の影響により分解しないことが求
められる。本発明の剥離剤は剥離力も優れ、実質
的に不燃性で、毒性も低いという特性を有し、通
常の使用に当つては、前記のごとき悪影響もな
い。
本発明の剥離剤を、苛酷な条件で使用し、安定
化を要する場合には、エポキサイド類及び／又は
アミン類を配合することにより、安定化を良く達
成することができる。エポキサイド類としては分
子内に少なくとも１つの隣接エポキシ基
The present invention relates to a photoresist stripper with improved stripping performance. Printed wiring boards, in which various parts are mounted and wiring for connection are created in the form of wiring diagrams on an insulator, are known in various forms such as single-sided, double-sided, and multilayer wiring boards. When creating patterns for printed wiring boards, when the pattern density is high, a photographic method using a photoresist is said to be preferable to a screen printing method. The photoresist must undergo steps such as exposure, development, etching, and finally be completely peeled off. A mixture of methylene chloride and methanol described in Japanese Patent Publication No. 52-45241 is known as such a photoresist stripping agent. There are more than 10 types of printed wiring board manufacturing processes, so
Efforts are being made to improve productivity by simplifying or speeding up various processes. In the photoresist stripping process, it is desired to improve the stripping force in order to increase the stripping speed. In order to meet these demands, the present invention provides a new photoresist stripping agent with high photoresist stripping ability, which contains methylene chloride, alcohols, and 1,2-dichloroethane as essential components. The total blending ratio of methylene chloride and alcohol in the photoresist remover of the present invention is 90wt%.
As mentioned above, preferably 95 wt% or more is appropriate. If it is less than this, sufficient photoresist peeling ability cannot be obtained. It is preferable to select a blending ratio of methylene chloride and alcohols close to a blending ratio that provides an azeotropic composition of both, but it is necessary to make them substantially nonflammable, and flammable alcohols should be mixed with chlorides that have no flash point. It is also important to use a small amount relative to methylene. For example, methylene chloride and methanol have approx.
13:1, methylene chloride and isopropanol: approx.
At a blending ratio of 12:1, it forms an azeotropic composition and is virtually nonflammable, causing no problems, but ethanol
95wt% or more is required, and an azeotropic composition is rather undesirable. Use at or near an azeotropic composition has the advantage that the composition ratio does not vary greatly during distillation regeneration and that the stripping performance can be kept constant. Usually, the mixing ratio of methylene chloride and alcohol is 7:1 or more.
The ratio should be 25:1. Suitable examples of other alcohols include lower alcohols such as n-propyl alcohol, n-butyl alcohol, isobutyl alcohol, sec-butyl alcohol, and tertiary-butyl alcohol. Two or more of these alcohols may be used in combination as long as they do not impede the object of the present invention. The stripping agent of the present invention contains 0.2 to 7 wt% of 1,2-dichloroethane to methylene chloride and alcohol.
Preferably, it is blended in an amount of 0.5 to 5 wt%, which improves the peeling performance and increases the peeling speed. Although 1,2-dichloroethane has a flash point comparable to that of methanol and isopropanol, it is effective when added in a smaller amount to methylene chloride than these alcohols;
Substantially nonflammable properties can also be achieved by adding dichloroethane. The insulating portion of the printed wiring board is formed from a composite material of epoxy resin or phenol resin and paper, glass fiber, or the like. Also, for the surface plating of wiring boards,
Tin-lead plating, copper plating, or gold plating with a nickel base are used. The photoresist stripping agent is required not to have an adverse effect on the various materials constituting these printed wiring boards, and the stripping agent itself is also required not to decompose, especially due to the influence of metals. The stripping agent of the present invention has excellent stripping power, is substantially nonflammable, and has low toxicity, and does not have the above-mentioned adverse effects in normal use. When the release agent of the present invention is used under severe conditions and requires stabilization, stabilization can be achieved well by incorporating epoxides and/or amines. Epoxides have at least one adjacent epoxy group in the molecule.
【式】を有する化合物であり、具体的
にはプロピレンオキサイド、１，２−ブチレンオ
キサイド、２，３−ブチレンオキサイド、エピク
ロルヒドリン、スチレンオキサイド、ブチルグリ
シジルエーテル、フエニルグリシジルエーテル、
グリシドール等が好ましい。特に好ましいエポキ
サイド類はエピクロルヒドリンやプロピレンオキ
サイドである。エポキサイド類の配合量は特に限
定されるものではないが、剥離剤中に0.02〜3wt
％、好ましくは0.05〜0.8wt％の少量で充分な安
定化効果がある。
アミン類としては、ジイソプロピルアミン、シ
クロヘキシルアミン、ジアリルアミン、Ｎ−メチ
ルベンジルアミン、Ｎ，Ｎ−ジメチルベンジルア
ミン、Ｎ−アルキルモルホリン等が好適であり、
特に好ましいものは、ジイソプロピルアミン、ジ
アリルアミン、Ｎ−メチルベンジルアミンであ
る。アミン類の配合量はエポキサイド類と同様、
特に限定されるものではなく、剥離剤中に0.001
〜0.1wt％、好ましくは0.01〜0.06wt％の極微量
配合すればよく、これ以上配合しても不経済とな
るだけで、効果に大きな差はない。
本発明の剥離用組成物により剥離し得るフオト
レジストとしては、何ら限定されず、ポジ型又は
ネガ型の光露光用レジスト、遠紫外露光用レジス
ト、Ｘ線又は電子線用レジストを挙げることがで
きる。光露光用レジストの材質にはフエノール及
びクレゾールノボラツク樹脂をベースにしたキノ
ンジアジド系、シス−１，４−ポリイソプレンを
主成分とする環化ゴム系、ポリけい皮酸系等があ
り、遠紫外用レジストにはポリメチルメタアクリ
レート、ポリメチルイソプロペニルケトン等があ
り、電子線、Ｘ線レジスタにはポリメタクリル酸
メチル、メタクリル酸グリシジル−アクリル酸エ
チル共重合体、メタクリル酸メチル−メタクリル
酸共重合体等が知られているが、本発明の剥離剤
はいずれにも有効である。
本発明の剥離剤は、特にプリント配線板製造時
のフオトレジスト剥離に適しているが、その他の
フオトレジスト応用分野例えば、半導体、リード
フレーム、TV用シヤドウマスク等の電子部品分
野をはじめ、金属、セラミツク、ガラス等の蝕刻
分野における剥離剤としても極めて効果的であ
る。
以下、本発明の実施例についてさらに具体的に
説明する。
実施例 １［剥離性能］
本発明の剥離剤を100c.c.のビーカーに80c.c.用意
し、５cm角に切断したテストピース（露光品）注
１を浸漬した。液温は18℃であつた。浸漬後20秒
及び40秒経過後の剥離状態を下記基準で評価し
た。結果を第１表に示す。
剥離の状態１……やや膨潤
２……かなり膨潤
３……やや剥離
４……かなり剥離
５……完全剥離
露光品注１…基板材質：ガラス布入り
エポキシ樹脂
レジストフイルム：デユポン製
RISTION Ｔ−1220
フイルム厚：50μ
露光条件：70ミリジユールA compound having the formula: specifically propylene oxide, 1,2-butylene oxide, 2,3-butylene oxide, epichlorohydrin, styrene oxide, butyl glycidyl ether, phenyl glycidyl ether,
Glycidol and the like are preferred. Particularly preferred epoxides are epichlorohydrin and propylene oxide. The amount of epoxide compounded is not particularly limited, but it is 0.02 to 3wt in the release agent.
%, preferably 0.05 to 0.8 wt%, has a sufficient stabilizing effect. Suitable amines include diisopropylamine, cyclohexylamine, diallylamine, N-methylbenzylamine, N,N-dimethylbenzylamine, N-alkylmorpholine, etc.
Particularly preferred are diisopropylamine, diallylamine, and N-methylbenzylamine. The blending amount of amines is the same as that of epoxides.
There are no particular limitations, and 0.001 in the release agent.
A very small amount of ~0.1wt%, preferably 0.01~0.06wt% may be added, and even if more than this is added, it will only become uneconomical and there will be no significant difference in effectiveness. The photoresist that can be removed by the stripping composition of the present invention is not limited in any way, and examples include positive or negative photoresist, deep ultraviolet exposure resist, and X-ray or electron beam resist. . Materials for resists for light exposure include quinone diazide based on phenol and cresol novolac resins, cyclized rubber based on cis-1,4-polyisoprene, and polycinnamic acid. Resists include polymethyl methacrylate and polymethyl isopropenyl ketone, and electron beam and X-ray resists include polymethyl methacrylate, glycidyl methacrylate-ethyl acrylate copolymer, and methyl methacrylate-methacrylic acid copolymer. Coalescence and the like are known, but the release agent of the present invention is effective for both. The stripping agent of the present invention is particularly suitable for stripping photoresists during the production of printed wiring boards, but is also suitable for other photoresist application fields, such as semiconductors, lead frames, electronic parts fields such as TV shadow masks, metals, ceramics, etc. It is also extremely effective as a remover in the field of etching glass, etc. Examples of the present invention will be described in more detail below. Example 1 [Peeling Performance] 80 cc of the stripping agent of the present invention was prepared in a 100 cc beaker, and a test piece (exposed item) Note 1 cut into 5 cm squares was immersed. The liquid temperature was 18°C. The peeling state after 20 seconds and 40 seconds after immersion was evaluated according to the following criteria. The results are shown in Table 1. Peeling status 1...Slightly swollen 2...Significant swelling 3...Slightly peeled 4...Significantly peeled 5...Completely peeled Exposed product Note 1...Substrate material: Glass cloth included Epoxy resin resist film: Dupont RISTION T-1220 Film thickness: 50μ Exposure conditions: 70 millijoules
【表】【table】
Claims (1)
クロルエタンを必須成分とすることを特徴とする
フオトレジスト剥離剤。1. A photoresist stripping agent characterized by containing methylene chloride, alcohols, and 1,2-dichloroethane as essential components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14140384A JPS6120947A (en) | 1984-07-10 | 1984-07-10 | Photoresist peeling agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14140384A JPS6120947A (en) | 1984-07-10 | 1984-07-10 | Photoresist peeling agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6120947A JPS6120947A (en) | 1986-01-29 |
| JPH0374829B2 true JPH0374829B2 (en) | 1991-11-28 |
Family
ID=15291187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14140384A Granted JPS6120947A (en) | 1984-07-10 | 1984-07-10 | Photoresist peeling agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6120947A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2591644B2 (en) * | 1987-03-11 | 1997-03-19 | 東京応化工業株式会社 | Photoresist stripper |
-
1984
- 1984-07-10 JP JP14140384A patent/JPS6120947A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6120947A (en) | 1986-01-29 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |