JPH0373584A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0373584A JPH0373584A JP21031589A JP21031589A JPH0373584A JP H0373584 A JPH0373584 A JP H0373584A JP 21031589 A JP21031589 A JP 21031589A JP 21031589 A JP21031589 A JP 21031589A JP H0373584 A JPH0373584 A JP H0373584A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- substrate
- active layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 24
- 230000000903 blocking effect Effects 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 10
- 238000005253 cladding Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 3
- 101150054880 NASP gene Proteins 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 101100186385 Bacillus subtilis (strain 168) naiP gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＰＯＳ、ＦＡシステム等のバーコードリーダー
用および光計測等の光源に用いられる半導体レーザ装置
に関し、発振波長が６８０ｎｍ以下のＡｔ１ＧａＩｎｖ
系可視光半導体レーザ装置の構造に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor laser device used for barcode readers such as POS and FA systems and as a light source for optical measurement, etc.
This invention relates to the structure of a system visible light semiconductor laser device.
第３図は従来の利得ガイド型のＡｌＧａＩｎＰｌ可視光
半導体レーザの構造を示す断面図である（例えば、昭和
６１年度電子通信学会予稿集。FIG. 3 is a cross-sectional view showing the structure of a conventional gain-guided AlGaInPl visible light semiconductor laser (for example, Proceedings of the Institute of Electronics and Communication Engineers, 1988).
Ｐ、４−９２）。P, 4-92).
図中ｌはｎ−ＧａＡｓ基板であり、この基板１上にはｎ
−ＧａＡｓバッファー層２が形成されている。バッファ
ー層２上にはｎ−ＡＩＧａＩｎＰクラッド層３．Ｇａ、
ＩｎＰ活性層４．ｐ ＡｆｆＧａＩｎＰクラッド層５．
ｐ−ＧａＩｎＰエツチング停止層６．ｎ−ＧａＡｓ電流
阻止層７及ｐ−ＧａＡｓコンタクト層８からなるダブル
ヘテロ接合構造が形成されている。In the figure, l is an n-GaAs substrate, and on this substrate 1 there is an n-GaAs substrate.
- A GaAs buffer layer 2 is formed. On the buffer layer 2 is an n-AIGaInP cladding layer 3. Ga,
InP active layer 4. p AffGaInP cladding layer 5.
p-GaInP etch stop layer 6. A double heterojunction structure consisting of an n-GaAs current blocking layer 7 and a p-GaAs contact layer 8 is formed.
この構造を有する半導体レーザ装置は通常ＭＯＶＰＥ法
又はＭＢＥ法によって製造されるが、ここでは量産性に
優れたＭＯＶＰＥ法を用いた場合について述べる。Semiconductor laser devices having this structure are usually manufactured by the MOVPE method or the MBE method, but here a case will be described in which the MOVPE method, which is excellent in mass production, is used.
先ず、１回目のＭＯＶＰＥ成長によってｎ−ＧａＡｓバ
ッファー層２から゛ｎ−ＧａＡｓ電流阻止層７までの６
層構造を順次形成し、ｎ−ＧａＡｓ￥を流阻止層７の一
部にｐ−ＧａＩｎＰエツチング停止層６が露出するスト
ライブ状の溝９を形成する。First, by the first MOVPE growth, 6 layers from the n-GaAs buffer layer 2 to the n-GaAs current blocking layer 7 are grown.
A layered structure is formed in sequence, and a striped groove 9 is formed in a part of the n-GaAs\ flow blocking layer 7, in which the p-GaInP etching stop layer 6 is exposed.
続いて２回目のＭＯＶＰＥ成長によって溝９を含むｎ−
ＧａＡｓ’！［流阻止層７上にｐ−ＧａＡｓ：＋７２２
４層８が形成されている。その後、コンタクト層８の上
面にｐ側電極１０が被着され、基板１の下面にはｎ側電
極１１が被着されている。Subsequently, by a second MOVPE growth, the n-
GaAs'! [p-GaAs on flow prevention layer 7: +722
Four layers 8 are formed. Thereafter, a p-side electrode 10 is attached to the upper surface of the contact layer 8, and an n-side electrode 11 is attached to the lower surface of the substrate 1.
この構造では、電流狭窄はｐ −Ｇ ａ Ａ ｓコンタ
クト層８とｎ−ＧａＡｓ電流阻止層７により行なわれる
。また、ｐ−ＧａＩｎＰエツチング停止層６はストライ
ブ状の溝９を形成する際にｎ−ＧａＡｓ電流阻止層７だ
けが化学エツチングされるためのエツチング停止の役目
をしており、またｐ −ＡｆｌＧａＩｎＰクラッド層５
とｐ−ＧａＡＳ：Ｉンタクト層８との間の電気抵抗低減
を目的とするものである。このようにして利得ガイド型
の半導体レーザ装置が構成される。In this structure, current confinement is performed by the p-GaAs contact layer 8 and the n-GaAs current blocking layer 7. Furthermore, the p-GaInP etching stop layer 6 serves as an etching stop because only the n-GaAs current blocking layer 7 is chemically etched when forming the striped grooves 9. layer 5
The purpose of this is to reduce the electrical resistance between the p-GaAS:I contact layer 8 and the p-GaAS:I contact layer 8. In this way, a gain-guided semiconductor laser device is constructed.
Ｃ発明が解決しようとする課題）
【、かしながら、このような従来の半導体レーザ装置で
は、以下に述べるような結晶成長上の問題点がある。す
なわち、Ａｌ２ＧａＩｎＰ系の化合物半導体をＭＯＶＰ
Ｅ法によって結晶成長する場合、下地結晶の面方位によ
って、その上に成長されるＡ、ｆｆＧａＩｎＰおよびＧ
ａＩｎＰ層の結晶構造が異なることが知られている。例
えば面方位（１００）ＧａＡｓ基板上に成長させたＧ
＆ ｏ、ｓ Ｉ ｎ ａ、ｓＰ結晶（第３図に示すＧａ
ＩｎＰ活性層４に相当する）には、（１１１）面にＧａ
とＩｎが交互に規則配列する自然超格子が形成され、バ
ンドギャップが正常値（約ｌ、９ｅＶ）より約５０ｍｅ
Ｖ程小さくなる。一方、面方位（１１１）または（１１
０）ＧａＡｓ基板上には自然超格子は形成されず、約１
．９ｅＶの正常なバンドギャップをとることが知られて
いる。（例えば昭和６３年度秋季応用物理学会予稿集、
Ｐ、２７７〜２７８）。Problems to be Solved by the Invention) However, such conventional semiconductor laser devices have problems in crystal growth as described below. In other words, an Al2GaInP-based compound semiconductor is MOVP
When crystals are grown by the E method, A, ffGaInP and G grown on it depend on the plane orientation of the underlying crystal.
It is known that the crystal structures of the aInP layers are different. For example, G grown on a (100) GaAs substrate
& o, s I n a, sP crystal (Ga shown in Figure 3)
(corresponding to the InP active layer 4) has Ga on the (111) plane.
A natural superlattice in which In and In are arranged regularly is formed, and the band gap is about 50 me from the normal value (about 1, 9 eV).
It becomes smaller by V. On the other hand, the plane orientation (111) or (11
0) No natural superlattice is formed on the GaAs substrate, and approximately 1
．． It is known to have a normal band gap of 9 eV. (For example, the 1986 Autumn Proceedings of the Japan Society of Applied Physics,
P, 277-278).
従がって、従来の半導体レーザ装置では得られる発振波
長は６６０〜６８０ｎｍに限定され、さらなる６８０ｎ
ｍ以下の短波長域のレーザ発振を得ることが困難であり
、またＭＯＶＰＥ法による成長温度、Ｖ１ｍ比、ドーピ
ングによってもＧａとＩｎの配列秩序の程度によりバン
ドギャップが変動することも知られており、一定のバン
ドギャップな有する結晶層を再現性良く得ることが困難
である。Therefore, with conventional semiconductor laser devices, the oscillation wavelength that can be obtained is limited to 660 to 680 nm, and even further than 680 nm.
It is difficult to obtain laser oscillation in the short wavelength range of less than m, and it is also known that the band gap varies depending on the growth temperature, V1m ratio, and doping in the MOVPE method, depending on the degree of arrangement order of Ga and In. However, it is difficult to obtain a crystal layer with a constant bandgap with good reproducibility.
本発明は、このような問題点を解決し、面方位（１００
）の基板を用いても発振波長の再現性に優れ、６６０ｎ
ｍ以下のレーザ発振を可能とするＡｆＧａＩｎＰ系可視
光半導体レーザ装置を提供するものである。The present invention solves these problems and improves surface orientation (100
) has excellent reproducibility of the oscillation wavelength even when using a substrate of 660n
The present invention provides an AfGaInP visible light semiconductor laser device that enables laser oscillation of less than m.
本発明の半導体レーザ装置は、ＡｎＧａＩｎＰｎＧａＩ
ｎ−ザ装置において、少なくとも発光領域となる活性層
部は（１００）または（００１）結晶面を含まない面指
数を有する結晶面、例えば（１１１）、 （２１１）結
晶面上に形成されており、非発光領域となる活性層部は
（１００）または（００１）結晶面上に形成された構造
を有している。The semiconductor laser device of the present invention includes AnGaInPnGaI
In the n-za device, at least the active layer portion serving as the light emitting region is formed on a crystal plane having a plane index that does not include the (100) or (001) crystal plane, for example, the (111) or (211) crystal plane. The active layer portion serving as a non-emitting region has a structure formed on a (100) or (001) crystal plane.
〔実施例１〕 次に、本発明について図面を参照して説明する。[Example 1] Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の半導体レーザ装置の構造を
示す横断面図である。FIG. 1 is a cross-sectional view showing the structure of a semiconductor laser device according to an embodiment of the present invention.
まず、面方位（１００）のｎ、 −Ｇ ａ Ａ ｓ基板
１２の表面に＜０１１＞方向に平行で内側面が（１１１
）と（１１１）面ではさまれるストライフ状のＶ溝１３
を形成する。ここで、フォトレジスト膜またはＳｉＯ２
膜をマスクとして用い、ＮＨ４ＯＨとＨ２０ｔの混合液
でエツチングすることにより、幅４〜６μｍ、深さ２μ
ｍのＶ溝１３を形成できる。First, the inner surface is parallel to the <011> direction on the surface of the -GaAs substrate 12 with a plane orientation (100) of (111).
) and (111) planes, a strife-shaped V-groove 13
form. Here, photoresist film or SiO2
By using the film as a mask and etching with a mixture of NH4OH and H20t, a width of 4 to 6 μm and a depth of 2 μm is etched.
m V-grooves 13 can be formed.
次に、原料としてメタル系■族有機金属（トリメチルイ
ンジウム、トリエチルガリウム、トリメチルアルミニウ
ム）とＶ放水素化物（Ｐ Ｈｓ 、 Ａ ５Ｈ３）とを
用いた減圧下でのＭＯＶＰＥ法により、前記Ｖ溝１３を
施こしたｎ −Ｇ ａ Ａ ｓ基板１２（ｎ濃度２Ｘ１
０’″Ｃ１１ｌ−１）上に厚さ０．５ μｍのｎ−Ｇ
ａ、 Ａ ｓバッファー層１４（ｎ濃度ｌＸｌ０”Ｃ１
１−”）１厚さ１．ｉＪｍのｎ−（ＡＪ！ｏ、ｇＧａａ
ｉ） ａｓ Ｉ ｎａｉＰクラ、ド層１５（ｎ濃度５
Ｘ １０ ”Ｃｌ１１−’） 、厚さ０．０６，１ＪＩ
ｎのＧａ１ｌＬＩＩ工ｎａ、Ｐ活性層１６．厚さ１μｍ
のｐ （ＡｆａａＧＩＬｗｉ）ｗｓＩｎ。、ｓＰクラッ
ド層１７（Ｐ濃度３ Ｘ １０１７ａｍ−’） 、厚さ
０．０５ｐｍのｐ ＧａａｓＩ ｎａｓＰエツチング停
止層１８（ｐ濃度Ｉ Ｘ １０ ”ａｍ−’）、厚さ０
．６ μｍのｎ−Ｑ ａ Ａ ｓ電流阻止層１９（ｎ濃
度Ｉ Ｘ １０ ”ａｎ−’）を順次成長してダブルヘ
テロ構造を形成する。続いて、ＳｉＯｘ膜またはフォト
レジスト膜をマスクとして用い、ｎ−ＧａＡｓ電流阻止
層１８を貫通し、Ｉ） Ｇａ１ｓＩｎｌｌｊＰ工ｙチ
ング停止層１８が露出したストライブ状の溝２０を前記
■溝１３に対向した位置に形成する。これは、Ｈｓ Ｐ
Ｏｔ −Ｈ，Ｏ，、Ｈ２０の混合液を用いることによ
り電流阻止層１８のみが選択的にエツチングされること
により得られる。Next, the V groove 13 is formed by the MOVPE method under reduced pressure using metal-based group (I) organic metals (trimethylindium, triethylgallium, trimethylaluminum) and V hydrogen hydrides (PHs, A5H3) as raw materials. The applied n-GaAs substrate 12 (n concentration 2X1
0'''C11l-1) with a thickness of 0.5 μm
a, A s buffer layer 14 (n concentration lXl0''C1
1-”) 1 thickness 1.iJm n-(AJ!o, gGaa
i) as I naiP layer 15 (n concentration 5
X 10 "Cl11-'), thickness 0.06,1JI
n Ga11LII engineering na, P active layer 16. Thickness 1μm
p (AfaaGILwi)wsIn. , sP cladding layer 17 (P concentration 3 x 1017 am-'), p GaasI nasP etch stop layer 18 (p concentration I x 10 'am-'), thickness 0.05 pm, thickness 0
．． A double heterostructure is formed by sequentially growing a 6 μm n-Q a As current blocking layer 19 (n concentration I x 10 ``an-''). Then, using a SiOx film or a photoresist film as a mask, A stripe-shaped groove 20 is formed at a position opposite to the groove 13, passing through the n-GaAs current blocking layer 18 and exposing the I) GalsInlljP processing stopper layer 18.
This is obtained by selectively etching only the current blocking layer 18 by using a mixed solution of Ot-H, O, and H20.
次いで、トリエチルガリウムとＡ Ｓ Ｈｓを原料とし
て用いた減圧下での２回目のＭＯＶＰＥ法により、第１
図に示す如＜ｐ−ＧａＡｓコンタクト層２１を厚さ４μ
ｍ成長する。その後、ｐ −Ｇ ａＡｓコンタクト層２
１上にｐ側電極２２．基板１２の下面にｎ側電極２３を
形成することによって、第１図に示す構造の半導体レー
ザ装置が完成する。Next, a second MOVPE method was performed under reduced pressure using triethyl gallium and A S Hs as raw materials to obtain the first
As shown in the figure, the p-GaAs contact layer 21 is formed to a thickness of 4 μm.
m grow. After that, p-GaAs contact layer 2
1 on the p-side electrode 22. By forming the n-side electrode 23 on the lower surface of the substrate 12, the semiconductor laser device having the structure shown in FIG. 1 is completed.
第１図に示すように、ＭＯＶＰＥ法によるＶ溝１３上へ
の結晶成長においては、■溝１３０幅が成長層の厚さが
大きくなるにつれ狭くなり最後には平坦となる性質があ
るが、ここでは活性層１６までがＶ形状になるように半
導体層１４，１５の成長層厚を制御する。すなわち、活
性層１６が（１１１）と（１１１）面で構成されるＶ形
状のｎ （Ａｌｌ’ｗｇＧａｃｔ）。５ＩｎａｓＰク
ラッド層１５上に成長されるように層厚を設定する。As shown in FIG. 1, when crystals are grown on the V-groove 13 by the MOVPE method, the width of the groove 130 narrows as the thickness of the growing layer increases, and eventually becomes flat. Then, the growth layer thicknesses of the semiconductor layers 14 and 15 are controlled so that the layers up to the active layer 16 have a V-shape. That is, the active layer 16 is V-shaped n (All'wgGact) composed of (111) and (111) planes. The layer thickness is set so that it is grown on the 5InasP cladding layer 15.
また、レーザ発振に必要な電流注入が■形状の活性層１
６領域に集中してなされる様に溝２０を配置している。In addition, the current injection necessary for laser oscillation is
The grooves 20 are arranged so as to be concentrated in six areas.
〔実施例２〕 第２図は本発明の実施例２の横断面図である。[Example 2] FIG. 2 is a cross-sectional view of Embodiment 2 of the present invention.
先ず第１図で説明した同様のエツチング工程で面方位（
１００）のｎ−ＧａＡｓ基板２３表面に＜０１１＞方向
に平行で外側面が（１１１）と（１１１，）面とではさ
まれるストライブ状の突起３４を形成する。次に、この
基板２３上にＭＯＶＰＥ法によって第１図と同様にバッ
ファー層り４．ｎ−クラ、ド層２５．活性層２６．ｐ−
クラ、ド層２７、エツチング停止層２８および電流阻止
層２９を順次形成する。その後、電流阻止層２９を貫通
しｐ Ｇ＆ｗｓＩｎａ、ｓＰエツチング停止層２８を露
出させたストライブ状の１１３０を前記突起３４に対向
した位置に配置形成する。First, the surface orientation (
On the surface of the n-GaAs substrate 23 (100), a stripe-like protrusion 34 is formed which is parallel to the <011> direction and whose outer surface is sandwiched between the (111) and (111,) planes. Next, a buffer layer 4. is formed on this substrate 23 by the MOVPE method in the same manner as in FIG. n-kura, do layer 25. Active layer 26. p-
A layer 27, an etching stop layer 28, and a current blocking layer 29 are formed in this order. Thereafter, a striped strip 1130 penetrating the current blocking layer 29 and exposing the pG&wsIna, SP etching stop layer 28 is formed at a position facing the protrusion 34.
次いで、２回目のＭＯＶＰＥ法によって、第１図と同様
にｐ−ＧａＡｓコンタクト層３１を形成し、その後電極
３２．３３を形成してレーザ用ウェハーが完成する。Next, by a second MOVPE method, a p-GaAs contact layer 31 is formed in the same manner as in FIG. 1, and then electrodes 32 and 33 are formed to complete a laser wafer.
本実施例では、ｎ−ＧａＡｓバッファー層２４からＧａ
ａｇＩｎａｓＰ活性層２６まで、突起形状が維持できる
様に層２４，２５の厚さを設定する。In this embodiment, Ga
The thicknesses of the layers 24 and 25 are set so that the protrusion shape can be maintained up to the agInasP active layer 26.
すなわち、活性層２６が（１１１）面と（１１１）面で
構成される突起状のｎ−（ＡＩｌａｓＧ ａａａ）。That is, the active layer 26 is a protruding n-(AIlasG aaa) formed of (111) planes and (111) planes.
Ｉｎ。Ｐクラッド層２５上に成長される。また、ｐ（Ａ
ｎａ、５Ｇａ１４） ａｓ Ｉ ｎａｓＰクラッド層１
７、ｐ ＧａａａＩｎ。、ｓＰエツチング停止層２８
、ｎ−ＧａＡｓ電流阻止層２９の上面は第２図に見るよ
うに台形状となり、次に成長するｐ−ＧａＡｓコンタク
ト層３１が４μｍ程度と厚いために、この台形の幅が広
く形成され、半導体レーザ装置組立上には問題とならな
い。In. It is grown on the P cladding layer 25. Also, p(A
na, 5Ga14) as I nasP cladding layer 1
7, p GaaaIn. , sP etching stop layer 28
The upper surface of the n-GaAs current blocking layer 29 has a trapezoidal shape as shown in FIG. This does not pose a problem when assembling the laser device.
以上説明したように本発明によれば、ＭＯＶＰＥ法によ
り成長形成されるＧａ１ｌＬｉＩｎ！ｌｓＰ活性層１６
．２６が（１１１）面と（ＩＩＴ）面とだけで構成され
るｎ （ＡＡａｓＧａａ４）ｗａＩ ｎｏ、ｓＰクラ
ッド層１５．２５上に形成されることになり、自然超格
子の形成なしに約１．９ ｅ Ｖの正常なバンドギャッ
プを有する活性層１６．２６が得られる。As explained above, according to the present invention, Ga11LiIn! is grown and formed by the MOVPE method. lsP active layer 16
．． 26 is formed on the n (AAasGaa4)waI no, sP cladding layer 15.25 consisting of only (111) planes and (IIT) planes, and approximately 1.9 An active layer 16.26 with a normal bandgap of eV is obtained.
従って、面方位（１００）基板を用いても発振波長が６
６０ｎｍ以下のレーザ発振を実現でき、ＭＯＶＰＥ成長
条件となる成長温度、 Ｖ／ＩＩＩ比。Therefore, even if a (100) plane orientation substrate is used, the oscillation wavelength is 6.
Growth temperature and V/III ratio that can realize laser oscillation of 60 nm or less and meet MOVPE growth conditions.
ドーピングによるバンドギャップの変動もなく安定した
発振波長が得られる。A stable oscillation wavelength can be obtained without fluctuations in bandgap due to doping.
また、本発明では、活性層１６．２６が発光領酸部で折
れ曲っているため、この両側領域とで作りつけの屈折率
差が生じ、いわゆる屈折率ガイド型構造となり、横モー
ド制御された低発振しきい値、高効率のレーザ発振をも
実現できる。In addition, in the present invention, since the active layer 16.26 is bent at the light emitting acid region, there is a built-in difference in refractive index between the regions on both sides, resulting in a so-called refractive index guided structure, which allows transverse mode control. Low oscillation threshold and high efficiency laser oscillation can also be achieved.
２２．３２・・・・・・Ｐ側電極、１１，２３．３３・
・・・・・ｎ側電極、１３・・・・・・Ｖ溝、３４・・
・・・・突起を示す。22.32...P side electrode, 11,23.33.
...N-side electrode, 13...V groove, 34...
...indicates a protrusion.
Claims (1)
ｌ＿ｘＧａ＿１＿−＿ｘ）＿０＿．＿５Ｉｎ＿０＿．＿
５Ｐ（０≦ｘ≦１）で成る半導体レーザ装置において、
少なくとも発光領域となる活性層部は（１００）または
（００１）結晶面を含まない面指数を有する結晶面上に
形成されており、非発光領域となる活性層部は（１００
）または（００１）結晶面上に形成されていることを特
徴とする半導体レーザ装置。The double heterojunction structure formed on the semiconductor substrate is (A
l_xGa_1_-_x)_0_. _5In_0_. ＿
In a semiconductor laser device consisting of 5P (0≦x≦1),
At least the active layer portion that becomes a light emitting region is formed on a crystal plane having a plane index that does not include the (100) or (001) crystal plane, and the active layer portion that becomes a non-light emitting region is formed on a crystal plane having a plane index that does not include the (100) or (001) crystal plane.
) or (001) crystal plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21031589A JPH0373584A (en) | 1989-08-14 | 1989-08-14 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21031589A JPH0373584A (en) | 1989-08-14 | 1989-08-14 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0373584A true JPH0373584A (en) | 1991-03-28 |
Family
ID=16587387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21031589A Pending JPH0373584A (en) | 1989-08-14 | 1989-08-14 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0373584A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4444313A1 (en) * | 1993-12-13 | 1995-06-14 | Mitsubishi Electric Corp | Laser diode for visible light |
| US5543470A (en) * | 1993-12-08 | 1996-08-06 | Sumitomo Chemical Company, Limited | Vulcanized rubber for heat resistant vibration-isolator |
| JPH10242583A (en) * | 1997-02-27 | 1998-09-11 | Sharp Corp | Manufacture of semiconductor laser element and semiconductor laser device |
-
1989
- 1989-08-14 JP JP21031589A patent/JPH0373584A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543470A (en) * | 1993-12-08 | 1996-08-06 | Sumitomo Chemical Company, Limited | Vulcanized rubber for heat resistant vibration-isolator |
| DE4444313A1 (en) * | 1993-12-13 | 1995-06-14 | Mitsubishi Electric Corp | Laser diode for visible light |
| JPH10242583A (en) * | 1997-02-27 | 1998-09-11 | Sharp Corp | Manufacture of semiconductor laser element and semiconductor laser device |
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