JPH0370889B2 - - Google Patents
Info
- Publication number
- JPH0370889B2 JPH0370889B2 JP60047439A JP4743985A JPH0370889B2 JP H0370889 B2 JPH0370889 B2 JP H0370889B2 JP 60047439 A JP60047439 A JP 60047439A JP 4743985 A JP4743985 A JP 4743985A JP H0370889 B2 JPH0370889 B2 JP H0370889B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- target
- permalloy
- permalloy thin
- coercive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000889 permalloy Inorganic materials 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 230000005415 magnetization Effects 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 40
- 239000007789 gas Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4743985A JPS61207006A (ja) | 1985-03-12 | 1985-03-12 | パーマロイ薄膜及び垂直磁気記録媒体の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4743985A JPS61207006A (ja) | 1985-03-12 | 1985-03-12 | パーマロイ薄膜及び垂直磁気記録媒体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61207006A JPS61207006A (ja) | 1986-09-13 |
JPH0370889B2 true JPH0370889B2 (ko) | 1991-11-11 |
Family
ID=12775181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4743985A Granted JPS61207006A (ja) | 1985-03-12 | 1985-03-12 | パーマロイ薄膜及び垂直磁気記録媒体の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61207006A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104893B2 (ja) * | 1985-10-16 | 1994-12-21 | 日立金属株式会社 | スパッター用ターゲット部材およびその製造方法 |
WO2004001779A1 (en) * | 2002-06-21 | 2003-12-31 | Seagate Technology Llc | Method of producing nife alloy films having magnetic anisotropy and magnetic storage media including such films |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933629A (ja) * | 1982-08-17 | 1984-02-23 | Matsushita Electric Ind Co Ltd | 垂直磁気記録媒体の製造方法 |
-
1985
- 1985-03-12 JP JP4743985A patent/JPS61207006A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933629A (ja) * | 1982-08-17 | 1984-02-23 | Matsushita Electric Ind Co Ltd | 垂直磁気記録媒体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS61207006A (ja) | 1986-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0093838B1 (en) | Perpendicular magnetic recording medium and method for producing the same | |
JPS6256575B2 (ko) | ||
EP0584768B1 (en) | Method for making soft magnetic film | |
US4842708A (en) | Perpendicular magnetic recording medium, method for producing the same, and sputtering device | |
US5147734A (en) | Magnetic recording media manufactured by a process in which a negative bias voltage is applied to the substrate during sputtering | |
JPH0542052B2 (ko) | ||
US4002546A (en) | Method for producing a magnetic recording medium | |
US5069983A (en) | Magnetic recording member | |
JPH0370889B2 (ko) | ||
JPS60182711A (ja) | 磁性薄膜の形成方法およびその装置 | |
US3303117A (en) | Process for cathodically sputtering a ferromagnetic thin film of a nickeliron-molybdenum alloy | |
JPS6363969B2 (ko) | ||
JPH0430731B2 (ko) | ||
JPH031810B2 (ko) | ||
JPH0263249B2 (ko) | ||
JPH0321967B2 (ko) | ||
JPH0357539B2 (ko) | ||
JPH0652569B2 (ja) | 磁気記録媒体の製造法 | |
JP2853923B2 (ja) | 軟磁性合金膜 | |
JPS6233321A (ja) | 垂直磁気記録媒体 | |
JP2834359B2 (ja) | 軟磁性合金膜 | |
JPS63291213A (ja) | 磁気記録媒体及びその製造法 | |
JPS6235605A (ja) | 軟磁性薄膜 | |
Lodder | Preparation, Microstructure and Magnetic Properties of Co-Cr Thin Films | |
JPH0320813B2 (ko) |