JPH0370172A - Storage device - Google Patents
Storage deviceInfo
- Publication number
- JPH0370172A JPH0370172A JP1206397A JP20639789A JPH0370172A JP H0370172 A JPH0370172 A JP H0370172A JP 1206397 A JP1206397 A JP 1206397A JP 20639789 A JP20639789 A JP 20639789A JP H0370172 A JPH0370172 A JP H0370172A
- Authority
- JP
- Japan
- Prior art keywords
- eprom
- light source
- memory
- package
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 claims abstract description 27
- 230000003628 erosive effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 241001508691 Martes zibellina Species 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
従来、不揮発性メモリには、そのチップ表面に紫外線等
の光を照射してその記憶内容を消去可能なEPROM
(erasable PROM>と、外部ヒンからの
電気信号により記憶内容を消去、書込み可能にするE
E p ROM (electrically era
sable PROM)とがある。
EFROMは、メモリセルの構造が簡単なため、高集積
化に向いており、信頼性も高い。一方、EEPROMは
、オンボードで記憶内容を消去可能なことが利点である
が、EPROMに比べて集積度、信頼性の面で劣るとい
う問題がある。これは、EEPROMは、書込み用のト
ランジスタの他に、消去用のトランジスタが必要で、ト
ランジスタの数が倍になることが原因して、メモリセル
の面積がEPROMの4倍になってしまうと共に構造が
複雑になるからである。Conventionally, non-volatile memories include EPROMs, which can erase their memory contents by irradiating the chip surface with light such as ultraviolet light.
(erasable PROM) and E that enables memory contents to be erased and written by electrical signals from an external pin.
E p ROM (electrically era
sable PROM). Since the EFROM has a simple memory cell structure, it is suitable for high integration and has high reliability. On the other hand, EEPROM has the advantage of being able to erase the stored contents on-board, but has the problem of being inferior in terms of integration and reliability compared to EPROM. This is because EEPROM requires an erase transistor in addition to a write transistor, and because the number of transistors is doubled, the area of the memory cell is four times that of EPROM, and the structure This is because it becomes complicated.
しかしながら、従来、のEPROMでは、消去のための
光源を必要とし、オンボード消去ができないため、記憶
されているデータの書替え時に時間及び手数がかかると
いう問題点がある。
本発明は、前記従来の問題点を解消すべくなされたもの
で、高集積度、高信頼性を保持しつつ、情報の消去、書
込みがオンボードでできる記憶装置を提供することを課
題とする。However, conventional EPROMs require a light source for erasing and cannot be erased on-board, so there is a problem in that it takes time and effort to rewrite stored data. The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a storage device that can erase and write information on-board while maintaining a high degree of integration and high reliability. .
本発明は、光の照射により記憶内容を消去可能な不揮発
性メモリと、前記照射する光を発生するための光源と、
前記メモリ及び光源を内包し外部から遮蔽するためのパ
ッケージと、前記メモリ及び光源の各々に接続されてい
て、それらをパッケージ外部から制御するための端子と
、該端子を介して電気信号を印加することにより、前記
メモリの記憶内容の書込み、消去が可能で、且つ、エネ
ルギの供給なしでその記憶内容を保持するようにして、
前記課題を達成したものである。The present invention provides a nonvolatile memory whose storage contents can be erased by irradiation with light, a light source for generating the irradiated light,
A package for containing the memory and the light source and shielding it from the outside; a terminal connected to each of the memory and the light source for controlling them from outside the package; and applying an electrical signal through the terminal. By this, the memory contents can be written and erased, and the memory contents can be retained without supplying energy.
The above-mentioned problem has been achieved.
本発明においては、パッケージ内に不揮発性メモリ及び
光源を内包して、光源からの光線の照射により、不揮発
性メモリの記憶内容を消去可能にすると共に、前記メモ
リ及び光源に端子を介して信号を印加し、記憶内容の書
込み、消去を行い、且つ、エネルギを供給しないでその
記憶内容を保持可能とする。
従って、EPROM等の光で記憶内容を消去可能なメモ
リを用いるため集積度、信頼性が高い。
又、光源を外部に設ける必要がないため、情報の書込み
、消去がオンボードでできる。よって、記憶装置の取扱
い性、実装性を向上させることができる。In the present invention, a nonvolatile memory and a light source are included in a package, and the stored contents of the nonvolatile memory can be erased by irradiation with light from the light source, and signals are transmitted to the memory and light source via a terminal. It is possible to write and erase memory contents by applying energy, and to retain the memory contents without supplying energy. Therefore, since a memory such as an EPROM whose stored contents can be erased with light is used, the degree of integration and reliability are high. Furthermore, since there is no need to provide an external light source, information can be written and erased on-board. Therefore, the handling and mounting properties of the storage device can be improved.
以下、図面を参照して、本発明の実施例を詳細に説明す
る。
この実施例は、第1図に示すような、窓のないパッケー
ジ10に、第2図に示すように、EPROM12と、紫
外線を発生する光源14とを納めて外部から遮蔽した半
導体記憶装置である。EPROM12及び光114の各
々には、それらをパッケージ外部から制御するための端
子16.18が接続されている。
前記EPROM12には、短時間でその記憶内容を消去
可能なものを用いるのが好ましい。
前記光源14は、第2図のように、前記EPROM12
に対向して、パッケージ10内に設けられており、前記
EPROM12の記憶内容を消去し得る光量の紫外線を
発生する。例えば、ストロボのように数百ミリ秒でオン
、オフする光源を、そのランプ中のガス体を紫外線を発
生するものに変えて紫外線発生光源14に用いることが
できる。
この実脳例の記憶装置において、記憶内容を消去して、
初期化する際には、光源用端子18を介して光源14に
電圧を印加し、紫外線を発生させる。この紫外線は、E
PROMI 2上に照射され、当該EPROM12の記
憶内容を消去して初期化する。
又、当該EPROM12に書込みを行う際には、端子1
6を介してEPROM12に書込み信号を入力し、囚込
む。その後、当HEPROM12はエネルギの供給がな
されなくても、その記憶内容を保持し続ける。読出しの
際には、端子16から読出す。
なお、前記実施例においては、第2図に示すように、矩
形断面のパッケージ10に光if!14とEPROM1
2とを内包する記憶装置を例示したが、本発明を構成す
る記憶袋9置は、このような構成のものに限定されるも
のではない。例えば、パッケージを他の断面としてもよ
い。又、光源で発生する光は、EPROMの記憶内容を
消去できる光であれば紫外線に限られない。Embodiments of the present invention will be described in detail below with reference to the drawings. This embodiment is a semiconductor memory device in which an EPROM 12 and a light source 14 that generates ultraviolet rays are housed in a windowless package 10 as shown in FIG. 1 and shielded from the outside, as shown in FIG. . Each of the EPROM 12 and the light 114 is connected to terminals 16 and 18 for controlling them from outside the package. It is preferable to use an EPROM 12 whose stored contents can be erased in a short period of time. The light source 14 is connected to the EPROM 12 as shown in FIG.
It is provided in the package 10 opposite to the EPROM 12, and generates ultraviolet rays in an amount capable of erasing the stored contents of the EPROM 12. For example, a light source that turns on and off in several hundred milliseconds, such as a strobe, can be used as the ultraviolet light source 14 by changing the gas in the lamp to one that generates ultraviolet light. In the memory device of this real brain example, the memory contents are erased,
When initializing, a voltage is applied to the light source 14 via the light source terminal 18 to generate ultraviolet light. This ultraviolet light is E
The light is irradiated onto the PROMI 2, erasing the memory contents of the EPROM 12 and initializing it. Also, when writing to the EPROM 12, terminal 1
A write signal is input to the EPROM 12 via 6 and captured. Thereafter, the HEPROM 12 continues to hold its stored contents even if no energy is supplied. When reading, data is read from the terminal 16. In the above embodiment, as shown in FIG. 2, light if! is applied to the package 10 having a rectangular cross section. 14 and EPROM1
Although the storage device containing the storage bag 2 and the storage bag 9 has been exemplified, the storage bag 9 that constitutes the present invention is not limited to such a configuration. For example, the package may have other cross sections. Furthermore, the light generated by the light source is not limited to ultraviolet light as long as it can erase the stored contents of the EPROM.
【発明の効果】
以上説明した通り、本発明によれば、高集積度、高信頼
性を保持しつつ、オンボードで情報の消去、書込みが可
能になる。従って、記憶装置の取扱い性、実装性を向上
させ得る等の優れた効果が得られる。[Effects of the Invention] As described above, according to the present invention, it becomes possible to erase and write information on-board while maintaining high degree of integration and high reliability. Therefore, excellent effects such as improved handling and packaging of the storage device can be obtained.
第1図は、本発明の実施例に係る記憶装置の外観構成を
示す斜視図、
第2図は、前記記憶装置の内部構成を示す断面図である
。
○・・・パッケージ、
2・・・EPROM。
4・・・紫外線発生光源、
6・・・EPROM用端子、
8・・・光源用端子。FIG. 1 is a perspective view showing the external structure of a storage device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the internal structure of the storage device. ○...Package, 2...EPROM. 4... Ultraviolet light generation light source, 6... EPROM terminal, 8... Light source terminal.
Claims (1)
モリと、 前記照射する光を発生するための光源と、 前記メモリ及び光源を内包し外部から遮蔽するためのパ
ッケージと、 前記メモリ及び光源の各々に接続されていて、それらを
パッケージ外部から制御するための端子と、 該端子を介して電気信号を印加することにより、前記メ
モリの記憶内容の書込み、消去が可能で、且つ、エネル
ギの供給なしでその記憶内容を保持し得ることを特徴と
する記憶装置。(1) A nonvolatile memory whose memory contents can be erased by irradiation with light, a light source for generating the irradiated light, a package for containing the memory and the light source and shielding it from the outside, and the memory and the light source. A terminal is connected to each of the memory to control them from outside the package, and by applying an electric signal through the terminal, the contents of the memory can be written and erased, and the energy can be reduced. A storage device characterized in that it is capable of retaining its storage contents without supply.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1206397A JPH0370172A (en) | 1989-08-09 | 1989-08-09 | Storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1206397A JPH0370172A (en) | 1989-08-09 | 1989-08-09 | Storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0370172A true JPH0370172A (en) | 1991-03-26 |
Family
ID=16522679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1206397A Pending JPH0370172A (en) | 1989-08-09 | 1989-08-09 | Storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0370172A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050007808A1 (en) * | 2003-07-08 | 2005-01-13 | Johnson Steven C. | System and method for erasing high-density non-volatile fast memory |
KR101036160B1 (en) * | 2004-01-09 | 2011-05-23 | 매그나칩 반도체 유한회사 | Uv ers flash cell structure |
-
1989
- 1989-08-09 JP JP1206397A patent/JPH0370172A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050007808A1 (en) * | 2003-07-08 | 2005-01-13 | Johnson Steven C. | System and method for erasing high-density non-volatile fast memory |
US7057928B2 (en) * | 2003-07-08 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | System and method for erasing high-density non-volatile fast memory |
KR101036160B1 (en) * | 2004-01-09 | 2011-05-23 | 매그나칩 반도체 유한회사 | Uv ers flash cell structure |
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