JPH0364451A - Production of insulation coating film - Google Patents
Production of insulation coating filmInfo
- Publication number
- JPH0364451A JPH0364451A JP20004489A JP20004489A JPH0364451A JP H0364451 A JPH0364451 A JP H0364451A JP 20004489 A JP20004489 A JP 20004489A JP 20004489 A JP20004489 A JP 20004489A JP H0364451 A JPH0364451 A JP H0364451A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stress
- internal stress
- compressive stress
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000009413 insulation Methods 0.000 title abstract description 3
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 54
- 239000007789 gas Substances 0.000 description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分１１１Ｆ
この発明は絶縁膜の製造方法に関する。さらに詳しくは
、薄膜磁気ヘッド等の、絶縁層やギャップ層等に使用さ
れる酸化アルミニウム（ＡＩｙＯｌ）膜を不活性ガス雰
囲気下で高周波２極スパッタリング法を用いた成膜技術
により作製する絶縁膜の製造方法に関する。Detailed Description of the Invention (a) Industrial Application 111F This invention relates to a method for manufacturing an insulating film. More specifically, the insulating film, which is used for the insulating layer, gap layer, etc. of thin-film magnetic heads, etc., is produced by a film-forming technique using high-frequency bipolar sputtering in an inert gas atmosphere. Regarding the manufacturing method.
（ロ）従来の技術
オーディオ、ビデオその他における磁気情報処理分野の
磁気記録再生手段として用いられる薄膜磁気ヘッドのギ
ャップ層や絶縁層としてＡｌｚＣ＋＋。(b) Prior Art AlzC++ is used as a gap layer or insulating layer of a thin film magnetic head used as a magnetic recording/reproducing means in the field of magnetic information processing in audio, video, and other fields.
Ｓ＋Ｏｔ、ＳｉＯなどが用いられている。この中でもＡ
ｌ２Ｏ３膜は優れた耐摩耗性及び絶縁性を有しており、
薄膜磁気ヘッドのギャップ層等に最も適した膜の１つで
ある。S+Ot, SiO, etc. are used. Among these, A
The l2O3 film has excellent wear resistance and insulation properties,
It is one of the most suitable films for the gap layer of thin-film magnetic heads.
ＡＬＯ３膜の作製に関しては、通常高周波２極スパッタ
リング法が用いられている。これはＡ Ｉ ２０３が高
融点月利であるため、蒸着等の成膜手段で作製するのは
困難であり、またＡ Ｉ ｔ Ｏ３が絶縁性の飼料であ
るため直流電源を用いたスパッタリング法ではターゲッ
トの表面が揚重してしまい成膜することができないため
である。高周波２極スパッタリング法（よ投入電力、不
活性ガス圧等のパラメータににって制御され、膜の特性
や成膜レイトが変化する。Regarding the production of the ALO3 film, a high frequency bipolar sputtering method is usually used. This is because A I 203 has a high melting point, so it is difficult to produce it by film-forming methods such as vapor deposition, and because A I t O3 is an insulating feed, it cannot be produced by sputtering using a DC power supply. This is because the surface of the target is lifted and cannot be deposited. High frequency bipolar sputtering method (controlled by parameters such as input power and inert gas pressure, changes film characteristics and film formation rate).
電力、脱の内部応力とＪ□（板と膜の密着強度（ま１、
ｌｉ＆板ど膜の関係を示４゛上で重要な要因てあり、般
に内部応力が小さく密着強度の高い膜か求められている
。また、内部応力や密着強度（よスパッタ９フフ時のパ
ラメータにより変化４゛る。飼えばＭｎ−Ｚ、ｎフェラ
イト等の磁性載板」二に、スパソタリング法等によりＦ
ｅＡｌＳｉ合金等の磁性層を形成した後、不活性ガスで
あるＡｒカスＩＯｍ’、１．’ｏｒｒの雰囲気て高周波
２極スパッタリング法でＡｌ２Ｏ。Electric power, internal stress of release and J□ (adhesion strength between plate and membrane (Ma1,
The relationship between Li and plate films is an important factor, and films with low internal stress and high adhesion strength are generally required. In addition, the internal stress and adhesion strength (varies by 4 degrees depending on the parameters during sputtering).
After forming a magnetic layer such as eAlSi alloy, Ar gas IOm', which is an inert gas, 1. Al2O by high frequency bipolar sputtering method in an atmosphere of 'orr.
脱を形成したどき、第２図のように投入電力密度により
内部応］Ｊが変化する。同図に示ず上うに投入電力密度
１．２７Ｗ／ｃｍ２て成膜したＡ Ｉ ２０ ＊膜の内
部応力り、、Ｉ：、 ２．５５Ｗ／ｃｍ２で成膜したも
のの約１／２である。また２、５５Ｗ／ｃｍ２で成膜し
たＡ Ｉ ２０３膜は内部応力が太きくＡｌ１４０３模
中にクラックが発生ずるため、従来、世人電力密度１．
２７Ｗ／ｃｍ’、 Ａ ｒカス圧１０ｍＴｏｒｒという
条イ／「ζＡ Ｉ ２０ 、ｌ膜を作製していノこ。When a breakout is formed, the internal response [J] changes depending on the input power density as shown in FIG. The internal stress of the A I 20 * film formed at an input power density of 1.27 W/cm 2 (not shown in the figure) is about 1/2 of that formed at an input power density of 2.55 W/cm 2 . In addition, the A I 203 film formed at 2.55 W/cm2 has a large internal stress and cracks occur in the Al1403 layer, so conventionally, the power density was 1.55 W/cm2.
27 W/cm' and Ar gas pressure of 10 mTorr.
（ハ）発明ｈＪ７１決しようと４′る課題しかしながら
、−に記の条件て作製したＡＬＯ。(c) Problems to be Solved by Invention hJ71 However, ALO was produced under the conditions described in -.
膜は内部応力が大きくハラついて再現ヤ１．が７１思く
、そのため２．５５Ｗ／ｃｍ’で成膜したＡ Ｉ ２０
３膜に生じるようなりラブクが発生ずる場合がある。ま
ノこ投入電力密度が低いため、ハ１２０３粒子のもつエ
ネルギーが小さく、前記磁性層との密着強度が低くなり
、Ａｌ２Ｏ３膜か剥離する等」二記条件で作製したＡｌ
２Ｏ３膜の信頼性に問題があった。The film has a large internal stress and is distorted.1. 71, so the A I 20 film formed at 2.55 W/cm'
Rubs may occur on the 3 membranes. Because the power density input into the manoko is low, the energy of the 1203 particles is small, and the adhesion strength with the magnetic layer is low, causing the Al2O3 film to peel off.''
There was a problem with the reliability of the 2O3 film.
この発明はかかる状況に鑑み／ｌされたものであり、内
部応力が小さい圧縮応力に調整されて再現性が良好てあ
り、かっ乃板または下地層と密着性が良好な絶縁膜の製
造方法を捉伏しようとするものである。The present invention was developed in view of the above situation, and provides a method for manufacturing an insulating film in which the internal stress is adjusted to a small compressive stress, the reproducibility is good, and the adhesion to the cover plate or base layer is good. It is an attempt to seize control.
（ニ）課題を解決するための手段
かくしてこの発明によれば、不活性ガスを用いるｈ周波
２極スパノタリング法に上り酸化アルミニウム膜を形成
する絶縁膜の製造方法において、成膜条件か、形成され
る酸化アルミニウメ２、膜の１’＝１部応ツノを０〜２
Ｘ １０”ｄｙｎｅ／ａｍ’の圧紺ｉ応力に副路しう
る条件に選択されることを特徴とする絶縁膜の製造方法
が提供される。(d) Means for Solving the Problems Thus, according to the present invention, in a method for manufacturing an insulating film that forms an aluminum oxide film using an h-frequency bipolar spanotaring method using an inert gas, the film formation conditions are changed. Aluminum oxide 2, 1' = 1 part of the film, 0 to 2
Provided is a method for manufacturing an insulating film, characterized in that the conditions are selected such that the pressure stress of X 10"dyne/am' can be applied.
この発明にＪ５いて、ＡＩ、ｏ３１１ｆｆｉは不活１生
ガス雰囲気下での高周波２極スパソタリング法により形
成されるが、このときの条件としてまず、形成されるＡ
ＬＯ９膜に生ずる内部応力が圧縮応力となる範囲に設定
される。ずなわら、ＡＬ（１＋ｔＪ脆性＋Ａ利であるた
め、引っ張り応力に弱く容易にクラックが生じるが、圧
縮応ツノに対しては若干の耐性があり、ある程度の内部
応力まで（よりラソタが発生しない傾向があるためであ
る。そしてざらに、」二記圧縮応力が成膜１＋ｊｉの不
活性ガス圧の変化に対してその変化が比較的小さい’Ｅ
（ｊ、囲に選択される。これ（Ｊすなわち、成膜時の不
活性ガス圧変動に対しても形成されるＡｌ２Ｏ３膜内に
生ずる圧縮応力のバラツキが抑さえられることを意味す
る。従って」二記正縮応ノノの範囲としては、Ｏ〜２
Ｘ ｔｏ１０ｄｙｎｅ／ｃｍ’が選択される。」二記圧
縮応力への調整は、不活性ガス圧、投入電力密度等のパ
ラメータを選択することによりなされる。」二記圧縮応
力の範囲となる不活性カス圧の具体例としては、後述す
る実施例（こ詳細されるが、例えば不活性カスが八「ガ
スである場合、投入電力密度が２．５５Ｗ／ｃｍ’下で
１５−２５ｍＴｏｒｒが、又は投入電力密度が３．８２
Ｗ／ｃｍ’下で２０〜：（ＯｍＴｏｒｒが挙げられる。In this invention, AI and o311ffi are formed by the high frequency bipolar spa sottering method in an inert raw gas atmosphere.
The internal stress generated in the LO9 film is set in a range where it becomes compressive stress. However, because AL (1 + tJ brittleness + A strength) is weak against tensile stress and easily cracks, it has some resistance to compressive stress, and up to a certain level of internal stress (more likely to prevent lasing). This is because the change in compressive stress is relatively small with respect to the change in inert gas pressure of film formation 1+ji.
(j, is selected in the circle. This (J) means that the variation in the compressive stress that occurs in the Al2O3 film that is formed is suppressed even in response to inert gas pressure fluctuations during film formation.Therefore, " The range of the two positive condensation reactions is O~2
X to 10 dyne/cm' is selected. Adjustment to the compressive stress described in Section 2 is made by selecting parameters such as inert gas pressure and input power density. As a specific example of the inert scum pressure within the range of compressive stress described in 2. cm' under 15-25 mTorr, or input power density is 3.82
20~ (OmTorr) under W/cm'.
従ってこの発明はまた、成膜条件が、投入電力密度が２
２５〜３．８２Ｗ／ｃｍ２及び不活性ガス１工か１５〜
３０ｍ’ｒｏｒｒの範囲に設定されることを特徴とする
絶縁膜の製造方法をも提０（するものである。Therefore, in this invention, the film forming conditions are such that the input power density is 2.
25~3.82W/cm2 and inert gas 1 or 15~
The present invention also provides a method for manufacturing an insulating film characterized in that the thickness is set within a range of 30 m'rorr.
この発明において、成ｆｉｘ時の投入電力密度及び不活
性ガス圧条件を調節する以外は、当該分野で公知の方法
・条件が適用できる。In this invention, methods and conditions known in the art can be applied, except for adjusting the input power density and inert gas pressure conditions during fixing.
０１：）作用
この発明によれば、不活外ガスを用いる高周波２極スパ
ッタリング法により酸化アルミニウム膜を成膜する際、
投入電力密度及び不活性ガス圧の調節により、内部応力
が特定の圧縮応力、例えば０〜２ Ｘ １０”ｄｙｎｅ
／ａｍ’と比較的小さくかつ変動幅の小さい圧縮応力に
調整され、その結果密着強度の高い酸化アルミニウド膜
が形成されることとなる。01:) Effect According to the present invention, when forming an aluminum oxide film by high frequency bipolar sputtering method using an inert external gas,
By adjusting the input power density and inert gas pressure, the internal stress can be reduced to a specific compressive stress, e.g. 0 to 2 x 10"dyne.
The compressive stress is adjusted to /am', which is relatively small and has a small fluctuation range, and as a result, an aluminum oxide film with high adhesion strength is formed.
以下実施例によりこの発明の詳細な説明するが、これに
よりこの発明は限定されるしので（よない。The present invention will be described in detail with reference to Examples below, but the present invention is not limited thereby.
（へ）実施例
Ｍｎ−Ｚｎフェライト基板」二にＦｃＡｌＳｉ合金膜を
スパッタリングによって成膜した後、Ａｒガス雰囲気下
での高周波２極スパッタリング法により、ｌ）投入電力
密度が２．５５Ｗ／ｃｍ２下で成膜したとき（・て表示
）
及び
２）投入電力密度が３．８２Ｗ／ｃｍ２下で成膜したと
き（○て表示）
のそれぞれにおいて、該成膜時のＡｒガス圧に対するＡ
ｌ＝ｏ Ｇ膜の内部応力を１ｌｌｌ＋定しく下記表１
）、これらの関係を第１図に示した。(f) Example Mn-Zn ferrite substrate 2) After forming an FcAlSi alloy film by sputtering, the film was formed by high-frequency bipolar sputtering method in an Ar gas atmosphere, l) at an input power density of 2.55 W/cm2. 2) When the film was formed (indicated by *) and 2) When the film was formed at an input power density of 3.82 W/cm2 (indicated by ○), A for the Ar gas pressure at the time of film formation.
l=o The internal stress of the G film is 1llll + constant Table 1 below
), these relationships are shown in Figure 1.
（以下余白）
表１
上記表１及び第１図から、
１）投入電力密度が２．２５Ｗ／ｃｍ’下で成膜した場
合、形成されるＡ ｌ ２０３膜の内部応力は約２５ｍ
Ｔｏｒｒ以下のＡｒガス圧では圧縮応力で、２膜ｍＴ
ｏｒｒ付近で圧縮応力から引っ張り応力に遷移すること
がわかる。またＡＩ、０３膜の圧縮応力はＡｒガス圧に
対して単調に減少する傾向があり、Ａｒガス圧約１５ｍ
Ｔ ｏｒｒ以下では応力の変化（よ急激である。(Leaving space below) Table 1 From Table 1 and Figure 1 above, 1) When the film is formed at an input power density of 2.25 W/cm', the internal stress of the formed Al 203 film is approximately 25 m
At Ar gas pressure below Torr, two films mT due to compressive stress.
It can be seen that there is a transition from compressive stress to tensile stress near orr. Furthermore, the compressive stress of the AI,03 film tends to decrease monotonically with the Ar gas pressure, and the Ar gas pressure is approximately 15 m
Below T orr, the stress changes (very rapidly).
２）投入電力密度が３．８２Ｗ／ｃｍ’下で成膜した場
合、形成されるＡ ｌ ｖ ０３膜の内部応力は約３０
１１ＩＴ ｏｒｒ以下のＡｒガス圧て（ま圧縮応力で、
３０ｍ’ｌ’ｏｒｒ付近で圧縮応力から引っ張り応力に
遷移することがわかる。またＡＬＯ＊膜の圧縮応力はＡ
ｒガス圧に対して単調に減少する傾向があり、Ａｒガス
圧約２０ｍＴ ｏｒｒ以下では応力の変化は急激である
。2) When forming a film at an input power density of 3.82 W/cm', the internal stress of the formed A l v 03 film is approximately 30
Ar gas pressure below 11 IT orr (with compressive stress,
It can be seen that there is a transition from compressive stress to tensile stress around 30 m'l'orr. Also, the compressive stress of the ALO* film is A
The stress tends to decrease monotonically with respect to the Ar gas pressure, and the stress changes rapidly when the Ar gas pressure is less than about 20 mTorr.
」二記いずれの結果からも、特に従来ＡＩｔｏ＋膜を成
膜していたＡｒガス圧１０ｍＴ ｏｒｒ近傍では、内部
応力の変化はＡｒガス圧の変化に対して敏感であり、こ
のことからＡｒガス圧のわずかな変化に対しても内部応
力が大きく変化し、内部応力にバラツキが生じ易いこと
がわかる。” Both results show that changes in internal stress are sensitive to changes in Ar gas pressure, especially at Ar gas pressures of 10 mT orr, which are conventionally used to form AIto+ films. It can be seen that even a slight change in the internal stress causes a large change in the internal stress, and variations in the internal stress are likely to occur.
そこでこの実施例において、Ａｒガス圧約１５〜２５ｍ
Ｔ ｏｒｒ、投入電力密度２ 、’５５ Ｗ ／’ｃ−
ｍ ”で高周波２極スパッタリングすることにより、又
は、Ａｒガス圧約２０−３０ｍ、Ｔ ｏｒｒ、投入電力
密度３．８２Ｗ／ｃｍ’で高周波２極スパッタリングす
ることにｊこり、いずれも内部応力がＯ〜２ Ｘ １０
１０ｄｙｎ／ｃ−の圧縮応力に祠祭されたＡｌｘ０ａ膜
が形成されることがわかる。Therefore, in this embodiment, the Ar gas pressure is approximately 15 to 25 m.
Torr, input power density 2, '55 W/'c-
By performing high-frequency bipolar sputtering at a pressure of about 20 to 30 m, Torr, and an input power density of 3.82 W/cm', the internal stress can be reduced to 2 x 10
It can be seen that an Alx0a film enshrined under a compressive stress of 10 dyn/c- is formed.
上記条件下で得られるＡ Ｌ２０ ｓ膜は、内部応力が
小さく、かつ上記範囲でＡｒガス圧が変動しても内部応
力はたかだかＯ〜２（Ｉｙｎ／ｃｍ２の範囲で変化する
だ（プであってそのそのバラツキも少ないので、鉄膜に
クラックが発生しないものである。また投入電力密度が
従来に比べて約２〜３倍になっているため、ＦｅＡｌＳ
ｉ合金膜との密着強度が高いものとなる。The A L20s film obtained under the above conditions has a small internal stress, and even if the Ar gas pressure changes within the above range, the internal stress will change within the range of at most 0 to 2 (Iyn/cm2). Since there is little variation in the iron film, cracks do not occur in the iron film.Also, since the input power density is about 2 to 3 times higher than that of the conventional method, FeAlS
The adhesion strength to the i-alloy film is high.
なお、上記実施例において不活性ガスはＡｒ以外のもの
、例えばＮｅガス等当該分！ｌ！１．で高値の不活性ガ
スであってもよい。In the above embodiments, the inert gas is other than Ar, such as Ne gas, etc. l! 1. It may also be a high priced inert gas.
（ト）発明の効果
この発明によれば、内部応ノノが小さく、かつ下地層と
の密着強度の高いＡ１．０３絶縁膜を再現性よく成膜す
ることができる。またさらにＡ ｌ ２０３膜の成膜レ
イトが向上し、量産性に優れた絶縁膜形成方法を提供で
きる。(G) Effects of the Invention According to the present invention, an A1.03 insulating film having a small internal thickness and high adhesion strength to the underlying layer can be formed with good reproducibility. Furthermore, the deposition rate of the Al 203 film is improved, and an insulating film forming method with excellent mass productivity can be provided.
第１図はＡｒガス雰囲気下での高周波２極スパッタリン
グ法によりＦｅＡｌＳｉ合金膜上に成膜したときの、形
成されるＡｌｔＯ，＋膜の内部応力と該成１１Ｑ時のＡ
ｒガス圧との関係を示すグラフ図、第２図は、スパッタ
リング時の投入電力密度と形成されるＡｌ２Ｏ３膜の内
部応力どの関係を示すグラフ図である。
１
第
２
図
特開平３
６４４５１（５）Figure 1 shows the internal stress of the AltO,+ film formed on the FeAlSi alloy film by the high-frequency bipolar sputtering method in an Ar gas atmosphere and the A
FIG. 2 is a graph showing the relationship between the input power density during sputtering and the internal stress of the Al2O3 film formed. 1 Figure 2 JP-A-3 64451 (5)
Claims (2)
法により酸化アルミニウム膜を形成する絶縁膜の製造方
法において、 成膜条件が、形成される酸化アルミニウム膜の内部応力
を０〜２×１０＾１＾０ｄｙｎｅ／ｃｍ＾２の圧縮応力
に調整しうる条件に選択されることを特徴とする絶縁膜
の製造方法。1. In an insulating film manufacturing method in which an aluminum oxide film is formed by high frequency bipolar sputtering in an inert gas atmosphere, the film forming conditions are such that the internal stress of the aluminum oxide film to be formed is 0 to 2 x 10^1^0 dyne. 1. A method for manufacturing an insulating film, characterized in that the conditions are selected such that the compressive stress can be adjusted to a compressive stress of /cm^2.
／ｃｍ＾２及び不活性ガス圧が１５〜３０ｍＴｏｒｒの
範囲に設定されることを特徴とする請求項１の絶縁膜の
製造方法。2. The film forming conditions are input power density of 2.25 to 3.82W.
2. The method of manufacturing an insulating film according to claim 1, wherein the inert gas pressure and the inert gas pressure are set in a range of 15 to 30 mTorr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20004489A JPH0364451A (en) | 1989-07-31 | 1989-07-31 | Production of insulation coating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20004489A JPH0364451A (en) | 1989-07-31 | 1989-07-31 | Production of insulation coating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0364451A true JPH0364451A (en) | 1991-03-19 |
Family
ID=16417895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20004489A Pending JPH0364451A (en) | 1989-07-31 | 1989-07-31 | Production of insulation coating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0364451A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06247721A (en) * | 1993-02-25 | 1994-09-06 | Owens Brockway Glass Container Inc | Multi-column orifice glass feeder |
| US6251231B1 (en) * | 1997-07-10 | 2001-06-26 | Nec Corporation | Manufacturing process for a magneto-resistive head accommodating a narrow gap |
| JP2007016272A (en) * | 2005-07-06 | 2007-01-25 | Ge Speciality Materials Japan Kk | Protective film covered on substrate, and its manufacturing method |
| JP2008211260A (en) * | 2008-06-09 | 2008-09-11 | Hitachi Ltd | Semiconductor laser and its production process |
| JP2017226887A (en) * | 2016-06-23 | 2017-12-28 | 株式会社アルバック | Film deposition method |
-
1989
- 1989-07-31 JP JP20004489A patent/JPH0364451A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06247721A (en) * | 1993-02-25 | 1994-09-06 | Owens Brockway Glass Container Inc | Multi-column orifice glass feeder |
| US6251231B1 (en) * | 1997-07-10 | 2001-06-26 | Nec Corporation | Manufacturing process for a magneto-resistive head accommodating a narrow gap |
| JP2007016272A (en) * | 2005-07-06 | 2007-01-25 | Ge Speciality Materials Japan Kk | Protective film covered on substrate, and its manufacturing method |
| JP2008211260A (en) * | 2008-06-09 | 2008-09-11 | Hitachi Ltd | Semiconductor laser and its production process |
| JP2017226887A (en) * | 2016-06-23 | 2017-12-28 | 株式会社アルバック | Film deposition method |
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