JPH0364310B2 - - Google Patents
Info
- Publication number
- JPH0364310B2 JPH0364310B2 JP55030270A JP3027080A JPH0364310B2 JP H0364310 B2 JPH0364310 B2 JP H0364310B2 JP 55030270 A JP55030270 A JP 55030270A JP 3027080 A JP3027080 A JP 3027080A JP H0364310 B2 JPH0364310 B2 JP H0364310B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- sio
- crystal wafer
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Nozzles (AREA)
Description
【発明の詳細な説明】
本発明は、改良された液体噴射用ノズル板の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved method of manufacturing a nozzle plate for liquid injection.
従来、シリコン単結晶の（100）面が表面に平
行に配向されたウエーハを異方性エツチングして
ノズルを形成した液体噴射用ノズル板が知られて
いる（例えば、特開昭51−93821号公報参照）。こ
の液体噴射用ノズル板は第１図に示したような製
造工程に従つて製造される。即ち、結晶の（100）
面が表面に平行に配向するように切り出されたシ
リコンウエーハ１の表面を化学的および機械的に
研摩して清浄にし（第１図ａ）、蒸気中で熱酸化
してSiO2膜２を形成する（第１図ｂ）。次に、
SiO2膜２の上にフオトレジスト膜３を形成し
（第１図ｃ）、片面にフオトマスク（図示せず）を
当てて露光し、現像してフオトレジスト膜３の所
望の位置に窓４を形成する（第１図ｄ）。そして、
窓４の部分のSiO2を、例えばフツ化水素酸でエ
ツチングして開口部５を形成した後、フオトレジ
スト膜３を除去する（第１図ｅ）。続いて、例え
ばエチレン・ジアミンとピロカテコールと水とを
含む溶液の如き異方性エツチング液を使用して開
口部５からシリコンウエーハ１をエツチングする
と先細の孔６が形成され（第１図ｆ）、さらに表
面のSiO2膜２が除去される（第１図ｇ）。最後
に、表面全体に耐食性保護膜７（SiO2膜または
SiN膜）を形成して（第１図ｈ）、ノズル板が完
成する。 Conventionally, a liquid injection nozzle plate is known in which a nozzle is formed by anisotropically etching a wafer in which the (100) plane of a silicon single crystal is oriented parallel to the surface (for example, Japanese Patent Laid-Open No. 51-93821). (see official bulletin). This liquid injection nozzle plate is manufactured according to the manufacturing process shown in FIG. i.e. (100) of the crystal
The surface of a silicon wafer 1 cut out so that the plane is oriented parallel to the surface is chemically and mechanically polished and cleaned (Fig. 1a), and thermally oxidized in steam to form a SiO 2 film 2. (Figure 1b). next,
A photoresist film 3 is formed on the SiO 2 film 2 (FIG. 1c), exposed with a photomask (not shown) on one side, and developed to form a window 4 at a desired position on the photoresist film 3. form (Fig. 1d). and,
After etching the SiO 2 at the window 4 with, for example, hydrofluoric acid to form an opening 5, the photoresist film 3 is removed (FIG. 1e). Subsequently, the silicon wafer 1 is etched from the opening 5 using an anisotropic etching solution such as a solution containing ethylene diamine, pyrocatechol, and water, forming a tapered hole 6 (FIG. 1f). Furthermore, the SiO 2 film 2 on the surface is removed (FIG. 1g). Finally, a corrosion-resistant protective film 7 (SiO 2 film or
The nozzle plate is completed by forming a SiN film (Fig. 1 h).
第２図は第１図に示した先細の孔６（以下ノズ
ルという）を拡大して示したものであるが、ノズ
ル６の壁面はウエーハ表面に対して略54.7゜の傾
斜角を有し、その最小径側エツジ部１ａは鋭く尖
つたいわゆるナイフエツジとなる。ところが、こ
のようにエツジ部１ａが表面に形成されたノズル
板は、例えばノズル板を洗浄したり組立てたりす
る際に、何かが接触してエツジ部１ａが極めて欠
けやすいという欠点があり、その取扱いに細心の
注意を必要とするものであつた。また、所望のノ
ズル径、即ち、ノズル板の一方の面におけるノズ
ルの最小径を得るために、他方の面における最大
径が大きくなり、従つて、２値偏向型のインクジ
エツト用ノズル板のように画素密度を高めるため
に多数のノズルを高密度に配列したい場合には不
利になる等の欠点があつた。 FIG. 2 is an enlarged view of the tapered hole 6 (hereinafter referred to as a nozzle) shown in FIG. The smallest diameter side edge portion 1a becomes a sharply pointed so-called knife edge. However, such a nozzle plate with the edge portion 1a formed on its surface has the disadvantage that, for example, when cleaning or assembling the nozzle plate, the edge portion 1a is extremely susceptible to chipping due to contact with something. It required extreme care in handling. In addition, in order to obtain the desired nozzle diameter, that is, the minimum diameter of the nozzle on one side of the nozzle plate, the maximum diameter on the other side becomes large. This method has disadvantages such as being disadvantageous when it is desired to arrange a large number of nozzles at high density in order to increase pixel density.
本発明は、上記従来例の欠点を解消するため
に、同一の異方性エツチング工程でシリコン単結
晶ウエーハを両面から同時エツチングしてノズル
径を決定するノズルの最小径の部分をシリコンウ
エーハの厚みの中間部分に形成し、エツジ部の欠
けを防止するとともに、ノズルの最大径を小さく
してノズルの高密度配列を可能にした液体噴射用
ノズル板の製造方法を提供するものである。以
下、図面により実施例を詳細に説明する。 In order to eliminate the drawbacks of the conventional example, the present invention etches the silicon single crystal wafer from both sides simultaneously in the same anisotropic etching process to determine the nozzle diameter. The present invention provides a method of manufacturing a nozzle plate for liquid ejection, which is formed in the middle part of the nozzle plate to prevent chipping of the edge part, and which reduces the maximum diameter of the nozzles to enable high-density arrangement of the nozzles. Hereinafter, embodiments will be described in detail with reference to the drawings.
第３図は、本発明の１実施例を示したもので、
ノズルの最小径の部分がシリコンウエーハの厚み
の中間部分に設けられている。このようなノズル
を形成するには、第１図ｃにおいて、ウエーハ両
面にフオトマスクをそれぞれ当て、露光、現像し
て互いに対向したフオトレジストの窓を形成し、
その窓の部分にSiO2をエツチングした後、シリ
コンウエーハを両面から異方性エツチングする。
このようにすると、第３図のシリコンウエーハ１
の一方からエツチングされた穴８と他方からエツ
チングされた穴９が内部で連通し、その連通した
部分がノズルの最小径となる。この場合、シリコ
ンウエーハ１の両面から焼付けるフオトマスクの
各パターンは、エツチングされる穴壁の傾斜角と
シリコンウエーハ１の厚みから容易に決定するこ
とができる。シリコンウエーハ１の両面からエツ
チングされた各穴８，９の壁面が最小径の部分で
なす角度は109.4゜となり、従つて、ノズルのいず
れのエツジ部も鈍角となる。 FIG. 3 shows one embodiment of the present invention.
The smallest diameter portion of the nozzle is provided in the middle of the thickness of the silicon wafer. To form such a nozzle, as shown in FIG.
After etching SiO 2 into the window, the silicon wafer is anisotropically etched from both sides.
In this way, the silicon wafer 1 shown in FIG.
A hole 8 etched from one side and a hole 9 etched from the other side communicate internally, and the communicating portion becomes the minimum diameter of the nozzle. In this case, each pattern of the photomask to be printed from both sides of the silicon wafer 1 can be easily determined from the inclination angle of the hole wall to be etched and the thickness of the silicon wafer 1. The angle formed by the wall surfaces of the holes 8 and 9 etched from both sides of the silicon wafer 1 at the minimum diameter portion is 109.4°, and therefore, both edges of the nozzle are obtuse angles.
以上のように構成された本実施例では、ノズル
径を決定する部分、即ち、ノズルの最小径の部分
が鈍角になるので機械的強度が増加し、しかも、
シリコンウエーハ１の中間部分に形成されている
ので外部の物との接触の機会が非常に少なくな
り、ノズルの破損を防止することができる。ま
た、シリコンウエーハを両面から同時に異方性エ
ツチングするので、製造時間を短縮できると共
に、精度の高いノズルを形成することができる。 In this embodiment configured as described above, the part that determines the nozzle diameter, that is, the part with the minimum diameter of the nozzle, has an obtuse angle, so the mechanical strength is increased.
Since it is formed in the middle part of the silicon wafer 1, the chance of contact with external objects is extremely reduced, and damage to the nozzle can be prevented. Furthermore, since the silicon wafer is anisotropically etched from both sides at the same time, manufacturing time can be shortened and a highly accurate nozzle can be formed.
第４図は、本発明の他の実施例を示したもの
で、ノズルの最小径の部分がシリコンウエーハ１
の厚みの中間部に形成されている。この場合、シ
リコンウエーハ１の両面から焼付けるフオトマス
クのパターンが同一になり、エツチングされた各
穴８および９は最小径の位置に対して対称にな
る。 FIG. 4 shows another embodiment of the present invention, in which the smallest diameter portion of the nozzle is attached to a silicon wafer.
It is formed in the middle part of the thickness. In this case, the pattern of the photomask printed from both sides of the silicon wafer 1 will be the same, and each etched hole 8 and 9 will be symmetrical with respect to the position of the minimum diameter.
このように構成された本実施例では、第３図の
実施例における効果の外に、ノズルの最大径が、
片面からエツチングした従来例に比べて1/2にな
るため、多数のノズルを高密度に配列することが
できるという効果がある。 In this embodiment configured in this way, in addition to the effects of the embodiment shown in FIG. 3, the maximum diameter of the nozzle is
This is 1/2 the size of the conventional example in which etching is done from one side, so it has the effect of allowing a large number of nozzles to be arranged at high density.
なお、シリコンウエーハの両面からフオトマス
クを焼付ける場合には、表裏のパターンの同軸性
を精度よく合わせる必要があり、そのため、位置
決め用の貫通孔を予めシリコンウエーハに２箇所
あけておくことが望ましい。この貫通孔も、異方
性エツチングにより容易にあけることができる。 Note that when printing photomasks from both sides of a silicon wafer, it is necessary to accurately match the coaxiality of the patterns on the front and back sides, so it is desirable to drill two through holes in the silicon wafer in advance for positioning. This through hole can also be easily made by anisotropic etching.
以上説明したように、本発明によれば、シリコ
ン単結晶ウエーハを両面から同時異方性エツチン
グしてノズルの最小径部をシリコンウエーハの厚
みの中間部分に形成することにより、ノズルの最
小径の部分が鈍角（109.4゜）となつて機械的強度
が増加するとともに、ノズル板の表面におけるノ
ズルの最大径が小さくなるので多数のノズルを高
密度に配列することができる。さらに、製造時間
の大幅短縮と、ノズル径の高精度化を達成するこ
とができるなどの利点がある。 As explained above, according to the present invention, the minimum diameter of the nozzle is formed by simultaneous anisotropic etching from both sides of the silicon single crystal wafer to form the minimum diameter part of the nozzle in the middle part of the thickness of the silicon wafer. Since the portion is obtuse-angled (109.4°), mechanical strength is increased, and the maximum diameter of the nozzles on the surface of the nozzle plate is reduced, allowing a large number of nozzles to be arranged at high density. Further, there are advantages such as a significant reduction in manufacturing time and the ability to achieve high accuracy in the nozzle diameter.
第１図は、従来のノズル板の製作順序を示す一
連の断面図であり、第２図は第１図の一部拡大断
面図であり、第３図は本発明の１実施例の一部断
面図であり、第４図は本発明の他の実施例の一部
断面図である。
１……シリコン単結晶ウエーハ、７……耐食性
保護膜、８，９……穴。
FIG. 1 is a series of cross-sectional views showing the manufacturing order of a conventional nozzle plate, FIG. 2 is a partially enlarged cross-sectional view of FIG. 1, and FIG. 3 is a partial view of one embodiment of the present invention. FIG. 4 is a partial sectional view of another embodiment of the present invention. 1... Silicon single crystal wafer, 7... Corrosion-resistant protective film, 8, 9... Hole.
Claims (1)
うに切り出された単一のシリコン単結晶ウエーハ
の両表面を化学的及び機械的に研摩して清浄にす
る工程と、 前記単一のシリコン単結晶ウエーハを熱酸化し
て両表面にSiO2膜を形成する工程と、 前記SiO2膜上にフオトレジスト膜を形成した
後、フオトマスクを当てて露光、現像し、前記単
一のシリコン単結晶ウエーハ両面の互いに対向す
る部分にフオトレジスト膜の窓を形成する工程
と、 前記フオトレジスト膜の窓部分のSiO2膜をエ
ツチングした後、前記フオトレジスト膜を除去す
る工程と、 エツチングにより形成された前記SiO2膜の窓
を通して、前記単一のシリコン単結晶ウエーハ
を、その両面から同一の異方性エツチング工程
で、同時エツチングして穴を形成し、その両面か
ら形成される穴を前記単一のシリコン単結晶ウエ
ーハの厚みの内部で互いに連通させる工程と、 前記SiO2膜を除去する工程と、 前記穴の内面を含む前記単一のシリコン単結晶
ウエーハの表面に保護膜を形成する工程と、 からなることを特徴とする液体噴射用ノズル板の
製造方法。[Claims] 1. A step of chemically and mechanically polishing and cleaning both surfaces of a single silicon single crystal wafer cut out so that the (100) plane of the crystal is oriented parallel to the surface. , a step of thermally oxidizing the single silicon single crystal wafer to form a SiO 2 film on both surfaces, and forming a photoresist film on the SiO 2 film, exposing and developing it with a photomask; a step of forming windows of a photoresist film on mutually opposing portions of both sides of a single silicon single crystal wafer; and a step of removing the photoresist film after etching the SiO 2 film in the window portion of the photoresist film. , Through the window of the SiO 2 film formed by etching, the single silicon single crystal wafer is simultaneously etched from both sides of the wafer in the same anisotropic etching process to form a hole, and holes are formed from both sides of the single silicon single crystal wafer. a step of making the holes communicate with each other within the thickness of the single silicon single crystal wafer; a step of removing the SiO 2 film; and a step of protecting the surface of the single silicon single crystal wafer including the inner surface of the hole. A method for manufacturing a liquid jet nozzle plate, comprising: a step of forming a film; and a step of forming a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3027080A JPS56126460A (en) | 1980-03-12 | 1980-03-12 | Nozzle plate for liquid injection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3027080A JPS56126460A (en) | 1980-03-12 | 1980-03-12 | Nozzle plate for liquid injection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56126460A JPS56126460A (en) | 1981-10-03 |
| JPH0364310B2 true JPH0364310B2 (en) | 1991-10-04 |
Family
ID=12299002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3027080A Granted JPS56126460A (en) | 1980-03-12 | 1980-03-12 | Nozzle plate for liquid injection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56126460A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6183463U (en) * | 1984-11-06 | 1986-06-02 | ||
| WO1997034769A1 (en) * | 1996-03-18 | 1997-09-25 | Seiko Epson Corporation | Ink jet head and method of manufacturing same |
| CN107244145A (en) * | 2017-06-08 | 2017-10-13 | 翁焕榕 | Ink jet-print head and its nozzle plate, ink-jet printer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5549275A (en) * | 1978-10-06 | 1980-04-09 | Fuji Xerox Co Ltd | Multi-nozzle orifice plate |
-
1980
- 1980-03-12 JP JP3027080A patent/JPS56126460A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5549275A (en) * | 1978-10-06 | 1980-04-09 | Fuji Xerox Co Ltd | Multi-nozzle orifice plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56126460A (en) | 1981-10-03 |
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