JPH0364081A - Piezoelectric bimorph element - Google Patents
Piezoelectric bimorph elementInfo
- Publication number
- JPH0364081A JPH0364081A JP1198034A JP19803489A JPH0364081A JP H0364081 A JPH0364081 A JP H0364081A JP 1198034 A JP1198034 A JP 1198034A JP 19803489 A JP19803489 A JP 19803489A JP H0364081 A JPH0364081 A JP H0364081A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic plate
- piezoelectric
- piezoelectric ceramic
- bimorph element
- piezoelectric bimorph
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000005388 borosilicate glass Substances 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Landscapes
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は圧電セラミック板への電圧印加による該圧電セ
ラミック板の伸縮を利用する圧電バイモルフ素子に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a piezoelectric bimorph element that utilizes expansion and contraction of a piezoelectric ceramic plate by applying a voltage to the plate.
（従来の技術及びその問題点）
従来、圧電セラえツク板に電圧を印加することにより該
圧電セラミック板を伸縮させ、この圧電セラミック板の
たわみ運動を駆動源として利用する圧電バイモルフ素子
が知られている。圧電バイモルフ素子は圧電セラミック
板をシム材に貼り合わせた構成となっており、被作動物
体が導電性の場合、圧電バイモルフ素子と被作動物体と
の電気絶縁をはかる必要があり、このため、作動伝達部
分に絶縁性の塗料を塗布したり、非導電性のプラスチッ
クスを中間に挟む等の試みが行われている。(Prior Art and its Problems) Conventionally, a piezoelectric bimorph element has been known in which a piezoelectric ceramic plate is expanded and contracted by applying a voltage to the piezoelectric ceramic plate, and the deflection movement of the piezoelectric ceramic plate is used as a driving source. ing. A piezoelectric bimorph element has a structure in which a piezoelectric ceramic plate is bonded to a shim material, and if the actuated object is conductive, it is necessary to provide electrical insulation between the piezoelectric bimorph element and the actuated object. Attempts have been made to coat the transmission part with insulating paint or to sandwich non-conductive plastic in between.
しかしながら作動伝達部分として、絶縁塗料やプラスチ
ックスを使用することは、耐摩耗性や機械的精度の面で
劣っていた。However, the use of insulating paint or plastics for the movement transmission part is inferior in terms of wear resistance and mechanical precision.
また、表面電極を形成していない圧電セラミック板部分
を作動伝達部分とすること゛も考えられるが、圧電セラ
ミック板はアルミナ、シリカ、ガラス等と比べて軟質で
あり、耐摩耗性や耐衝撃性の面で問題があった。It is also possible to use the piezoelectric ceramic plate part that does not have surface electrodes as the actuation transmission part, but piezoelectric ceramic plates are softer than alumina, silica, glass, etc., and have poor wear resistance and impact resistance. There was a problem.
（問題点を解決するための手段）
本発明者は以上のごとき従来技術の問題点を解決する為
に鋭意研究を行った結果本発明に至った。(Means for Solving the Problems) The present inventor has conducted intensive research to solve the problems of the prior art as described above, and as a result has arrived at the present invention.
本発明は、圧電セラミック板とシム材とを貼り合わせた
圧電バイモルフ素子において、前記圧電セラミック板の
作動伝達部分に電気絶縁性セラミック部を設けてなるこ
とを特徴とする圧電バイモルフ素子に関する。The present invention relates to a piezoelectric bimorph element in which a piezoelectric ceramic plate and a shim material are bonded together, in which an electrically insulating ceramic part is provided in an operation transmission part of the piezoelectric ceramic plate.
本発明において、圧電セラミック板の作動伝達部分に電
気絶縁性セラミック部を設ける方法として、（１）前記
圧電セラミック板に電気絶縁性セラミック板を接着する
方法、あるいは（２）前記圧電セラごツク仮に薄膜形成
法により電気絶縁性セラミック膜を形成する方法を挙げ
ることができる。In the present invention, as a method for providing an electrically insulating ceramic portion in an operation transmission portion of a piezoelectric ceramic plate, there are two methods: (1) bonding an electrically insulating ceramic plate to the piezoelectric ceramic plate, or (2) temporarily attaching the piezoelectric ceramic plate to the piezoelectric ceramic plate. A method of forming an electrically insulating ceramic film by a thin film forming method can be mentioned.
以下に本発明を図面を参照して説明する。The present invention will be explained below with reference to the drawings.
第１図（ａ）〜（Ｃ）は、それぞれ本発明の一実施態様
を示す圧電バイモルフ素子の平面図である。第２図は前
記圧電バイモルフ素子の縦断面図である。FIGS. 1(a) to 1(C) are plan views of piezoelectric bimorph elements each showing one embodiment of the present invention. FIG. 2 is a longitudinal sectional view of the piezoelectric bimorph element.
第３図は他の実施り、様を示す圧電バイモルフ素子の平
面図である。FIG. 3 is a plan view of a piezoelectric bimorph element showing another implementation.
本図において、圧電バイモルフ素子は、電極３が配設さ
れた圧電セラミック板１ＡとＩＢとをシム材２を挟んで
接着した構成となっており、一端部は固定部材５により
固定され、他端部には、作動伝達用部材として、小面積
の電気絶縁性セラミック部４が圧電セラミック板上、あ
るいは圧電セラミック板上に形成された電極上に形成さ
れている。In this figure, the piezoelectric bimorph element has a structure in which a piezoelectric ceramic plate 1A and IB, on which electrodes 3 are arranged, are bonded together with a shim material 2 in between.One end is fixed by a fixing member 5, and the other end is fixed. As an actuation transmission member, a small-area electrically insulating ceramic portion 4 is formed on a piezoelectric ceramic plate or on an electrode formed on the piezoelectric ceramic plate.
本発明の圧電バイモルフ素子は例えば以下（１）〜〔■
〕に示す方法により製造することができる。The piezoelectric bimorph element of the present invention is, for example, the following (1) to [■
It can be manufactured by the method shown in ].
（１） 圧電セラミック板表面に銀ペーストをスクリ
ーン印刷し、焼き付けた後、金属製シム材を挟んで２枚
のｔ極付き圧電セラミック板を接着する。次いで素子の
作動伝達部分に、被作動物体に接触しないような形状と
厚みの電気絶縁性セラ旦ツタ板を接着することにより製
造することができる。接着する電気絶縁性セラミック板
の具体例としては、アルミナ、シリカ、あるいはホウ珪
酸鉛ガラス等を挙げることができる。この様な方法によ
って圧電セラよツク板の作動伝達部位に、絶縁性で、か
つ、耐摩耗性のセラミック板よりなる作動伝達部分を形
成することができる。(1) After screen-printing silver paste on the surface of the piezoelectric ceramic plate and baking it, two piezoelectric ceramic plates with T-poles are bonded with a metal shim material in between. Next, it can be manufactured by adhering an electrically insulating ceramic vine plate having a shape and thickness such that it does not come into contact with the actuated object to the operation transmission portion of the element. Specific examples of the electrically insulating ceramic plate to be bonded include alumina, silica, and lead borosilicate glass. By such a method, it is possible to form an operation transmission portion made of an insulating and wear-resistant ceramic plate at the operation transmission portion of the piezoelectric ceramic plate.
（Ｉｆ） 圧電セラミック板表面に銀ペースト焼付法
、Ｎ１等の金属のスパッタリング法、Ｎｉ等の無電解メ
ツキ法等のような方法で電極を形成する。(If) Electrodes are formed on the surface of the piezoelectric ceramic plate by a method such as silver paste baking, sputtering of a metal such as N1, or electroless plating of Ni or the like.
次いで電極形成済の圧電セラミック板に、作動伝達部分
を含む小面積が開放部分となったマスキングをして、ス
パッタリング法、イオンブレーティング法、プラズマＣ
ＶＤ法等の薄膜形成法で電気絶縁性セラミックのｉｓを
電極上に形成する。１１気絶縁性セラミツクの具体例と
してはシリカ、アルξす、窒化珪素、ホウ珪酸鉛ガラス
等を挙げることができる。薄膜形成後の圧電セラミック
板の反りを軽減する為には、絶縁性セラミックと圧電セ
ラミック板との熱膨張係数差ができるだけ小さくなるよ
うに電気絶縁性セラ電ツク材料を選択するのが好ましい
。次いで圧電セラミック板を分極後、シム材と貼り合わ
せることにより、作動伝達部分が絶縁性で、かつ、耐摩
耗性のセラミック薄膜を有する圧電バイモルフ素子を作
成することができる。Next, the piezoelectric ceramic plate on which the electrodes have been formed is masked so that a small area including the actuation transmission part is open, and then subjected to sputtering, ion blating, or plasma C.
IS made of electrically insulating ceramic is formed on the electrode by a thin film forming method such as the VD method. Specific examples of dielectric ceramics include silica, aluminum, silicon nitride, and lead borosilicate glass. In order to reduce warpage of the piezoelectric ceramic plate after the thin film is formed, it is preferable to select an electrically insulating ceramic material such that the difference in thermal expansion coefficient between the insulating ceramic and the piezoelectric ceramic plate is as small as possible. Next, after polarizing the piezoelectric ceramic plate, it is bonded to a shim material, thereby making it possible to create a piezoelectric bimorph element having an insulating and wear-resistant ceramic thin film in its operation transmission portion.
（実施例）
以下に本発明の圧電バイモルフ素子の一製造方法例を示
し、本発明についてさらに詳しく説明する。(Example) An example of a method for manufacturing a piezoelectric bimorph element of the present invention will be shown below, and the present invention will be explained in more detail.
製造例１
幅１０ｍｍ、長さ３０ｍｍの圧電セラミック板の表面に
銀ペーストをスクリーン印刷し、乾燥後、焼き付けた。Production Example 1 Silver paste was screen printed on the surface of a piezoelectric ceramic plate with a width of 10 mm and a length of 30 mm, and after drying, it was baked.
シム材と圧電セラミック板とを接着剤で貼りあわせた後
、直径３ｍｍ、厚み０．２ｍｍのホウ珪酸鉛ガラスを接
着し、第１図（ａ）に示すような圧電バイモルフ素子を
製造した０作動伝達部分のガラス膜はｗＡｍ性であった
。After bonding the shim material and the piezoelectric ceramic plate with adhesive, lead borosilicate glass with a diameter of 3 mm and a thickness of 0.2 mm was bonded to produce a piezoelectric bimorph element as shown in Fig. 1(a). The glass film of the transmission part was wAm-like.
作動伝達部分の形状は被作動物体の形状や伝達様式によ
って適宜決められるもので本実施例の形状に限定される
ものではない。The shape of the actuation transmission portion is appropriately determined depending on the shape of the actuated object and the transmission mode, and is not limited to the shape of this embodiment.
製造例２
幅１０ｍｍ、長さ３０ｍｍ、厚み０．２ｍｍの圧電セラ
ミック板の両面に、マグネトロンスパッタリング法でＮ
ｉｔ極を形成した。圧電セラミック板の側面にＮｉが形
成されないようにマスキングをした０次に、圧電セラ壽
ツク板の先端部分の作動伝達部分を含む小面積を開口と
したマスキングをして、線幅２ｍｍの第３図に示すよう
なコの字型にアルミ珪酸ガラスをマグネトロンスパッタ
リング法でスパッタしてガラスの薄膜を形成した。Production example 2 N was applied to both sides of a piezoelectric ceramic plate with a width of 10 mm, a length of 30 mm, and a thickness of 0.2 mm using a magnetron sputtering method.
The it pole was formed. The side surface of the piezoelectric ceramic plate was masked to prevent the formation of Ni. Next, a small area including the operation transmission part at the tip of the piezoelectric ceramic plate was masked as an opening, and a third layer with a line width of 2 mm was masked. A thin glass film was formed by sputtering aluminum silicate glass in a U-shape as shown in the figure using magnetron sputtering.
ガラス膜の厚みは５ξクロンであった。圧電セラ主ツタ
板の反りはなく、Ｎｔ電極との絶縁性は十分であった。The thickness of the glass film was 5ξcm. There was no warping of the piezoelectric ceramic main vine plate, and the insulation with the Nt electrode was sufficient.
電極の形状は本製造例に限定されるものでなく、作動伝
達部分や被作動物体の形伏に合わせて適宜決定される。The shape of the electrode is not limited to this production example, and is determined as appropriate depending on the shape of the actuation transmission part and the actuated object.
圧電セラミック板を分極後、シム材と接着して、圧電バ
イモルフ素子を得た。After polarizing the piezoelectric ceramic plate, it was bonded to a shim material to obtain a piezoelectric bimorph element.
金属製てこの一端に１５ｇの加重を加え、他端を圧電バ
イモルフ素子で押す動作を２０万回行ったが、ガラス膜
の表面はまったく変化なく、セラミックスｉ膜部分の絶
縁性にも変化なかった。We applied a load of 15 g to one end of a metal lever and pushed the other end with a piezoelectric bimorph element 200,000 times, but the surface of the glass membrane did not change at all, and the insulation of the ceramic i-film part did not change either. .
（発明の効果）
本発明の圧電バイモルフ素子によれば、作用点を限定で
きるので、アクチュエータ駆動系の設計が容易になる。(Effects of the Invention) According to the piezoelectric bimorph element of the present invention, the point of action can be limited, making it easy to design the actuator drive system.
また、被作動物体が金属の場合でも、電気絶縁性セラミ
ックよりなる作用点以外の圧電セラミック板の表面電極
と被作動物体との接触は起こらず、アクチエエータ駆動
用の高電圧が他の機械要素や電気回路にリークすること
なく、被作動物体に圧電バイモルフ素子の動作を正確に
長期間にわたり伝達することができる。In addition, even if the actuated object is metal, the surface electrode of the piezoelectric ceramic plate other than the point of action made of electrically insulating ceramic does not come into contact with the actuated object, and the high voltage for driving the actuator is applied to other mechanical elements. The operation of the piezoelectric bimorph element can be accurately transmitted to the actuated object over a long period of time without leaking into the electric circuit.
第１図は本発明に係わる圧電バイモルフ素子の平面図で
あり、第２図は該圧電バイモルフ素子の縦断面図である
。第３図は本発明に係わる圧電バイモルフ素子の平面図
である。
１、ＩＡ、ＩＢ：圧電セラミック板、２：シム材、３：
銀電極、４：電気絶縁性セラミック板、５：固定部材FIG. 1 is a plan view of a piezoelectric bimorph element according to the present invention, and FIG. 2 is a longitudinal sectional view of the piezoelectric bimorph element. FIG. 3 is a plan view of a piezoelectric bimorph element according to the present invention. 1, IA, IB: piezoelectric ceramic plate, 2: shim material, 3:
Silver electrode, 4: Electrically insulating ceramic plate, 5: Fixing member
Claims (1)
モルフ素子において、前記圧電セラミック板の作動伝達
部分に電気絶縁性セラミック部を設けてなることを特徴
とする圧電バイモルフ素子。1. A piezoelectric bimorph element comprising a piezoelectric ceramic plate and a shim material bonded together, the piezoelectric bimorph element comprising an electrically insulating ceramic part provided in an operation transmission part of the piezoelectric ceramic plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198034A JPH0364081A (en) | 1989-08-01 | 1989-08-01 | Piezoelectric bimorph element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198034A JPH0364081A (en) | 1989-08-01 | 1989-08-01 | Piezoelectric bimorph element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0364081A true JPH0364081A (en) | 1991-03-19 |
Family
ID=16384434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1198034A Pending JPH0364081A (en) | 1989-08-01 | 1989-08-01 | Piezoelectric bimorph element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0364081A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996041384A1 (en) * | 1995-06-07 | 1996-12-19 | Siemens Aktiengesellschaft | Piezoelectric bending transducer |
| US6624550B2 (en) * | 1999-08-30 | 2003-09-23 | Siemens Aktiengesellschaft | Piezoelectric bending transducer |
-
1989
- 1989-08-01 JP JP1198034A patent/JPH0364081A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996041384A1 (en) * | 1995-06-07 | 1996-12-19 | Siemens Aktiengesellschaft | Piezoelectric bending transducer |
| US6624550B2 (en) * | 1999-08-30 | 2003-09-23 | Siemens Aktiengesellschaft | Piezoelectric bending transducer |
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