JPH0363567U - - Google Patents
Info
- Publication number
- JPH0363567U JPH0363567U JP12635589U JP12635589U JPH0363567U JP H0363567 U JPH0363567 U JP H0363567U JP 12635589 U JP12635589 U JP 12635589U JP 12635589 U JP12635589 U JP 12635589U JP H0363567 U JPH0363567 U JP H0363567U
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- magnet
- detection device
- position detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 3
- 230000005672 electromagnetic field Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案のマグネトロンスパツタ装置の
一実施例の要部構造を説明する正断面図である。
第２図は従来のマグネトロンスパツタリング装置
の正面図、第３図は磁石によつてターゲツト上に
形成された磁力線の形状を示す斜視図、第４図は
ターゲツトの消耗形状を示す断面図である。
２……基板（半導体ウエーハ）、３……ターゲ
ツト、５ａ，５ｂ……磁石、１０……ターゲツト
センサ、１２……ガウスメータ、１３……電力計
、１４……ステツピングモータ、１５ａ……ウオ
ームギヤ、１５ｂ……ウオーム、１６……位置調
整装置。
FIG. 1 is a front sectional view illustrating the main structure of an embodiment of the magnetron sputtering device of the present invention.
Fig. 2 is a front view of a conventional magnetron sputtering device, Fig. 3 is a perspective view showing the shape of magnetic lines of force formed on a target by a magnet, and Fig. 4 is a sectional view showing the shape of the target as it wears out. be. 2... Substrate (semiconductor wafer), 3... Target, 5a, 5b... Magnet, 10... Target sensor, 12... Gauss meter, 13... Power meter, 14... Stepping motor, 15a... Worm gear, 15b...Worm, 16...Position adjustment device.
Claims (1)
置すると共に、基板とターゲツトの間に直交電磁
界による高密度プラズマを発生させてスパツタリ
ングする装置において、 前記ターゲツトの表面スパツタ位置の検出装置
と、このターゲツト表面位置の検出装置から発信
される検出信号によつてターゲツトと磁石との相
対配設位置を変化させる位置調整装置を設置した
ことを特徴とするマグネトロンスパツタリング装
置。[Claims for Utility Model Registration] An apparatus for sputtering by disposing a magnet on the back side of a target facing a substrate and generating high-density plasma by orthogonal electromagnetic fields between the substrate and the target, comprising: A magnetron sputtering device comprising a position detection device and a position adjustment device that changes the relative position of the target and the magnet based on a detection signal transmitted from the target surface position detection device. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12635589U JPH0363567U (en) | 1989-10-26 | 1989-10-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12635589U JPH0363567U (en) | 1989-10-26 | 1989-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363567U true JPH0363567U (en) | 1991-06-20 |
Family
ID=31674169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12635589U Pending JPH0363567U (en) | 1989-10-26 | 1989-10-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363567U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016514207A (en) * | 2013-03-01 | 2016-05-19 | スパッタリング・コンポーネンツ・インコーポレーテッド | Sputtering equipment |
-
1989
- 1989-10-26 JP JP12635589U patent/JPH0363567U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016514207A (en) * | 2013-03-01 | 2016-05-19 | スパッタリング・コンポーネンツ・インコーポレーテッド | Sputtering equipment |
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