JPH03626B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method and apparatus for manufacturing an amorphous silicon photoreceptor for forming a photosensitive layer made of amorphous silicon on the surface of a substrate.

[Technical background of the invention and its problems]

In recent years, the use of amorphous silicon photoconductors as photosensitive layers has been proposed in the field of electronic copier technology. Photoconductors comprising this amorphous silicon photoconductor as a photoconductor layer (hereinafter simply referred to as α-Si photoconductors) are currently used in electronic copying machines because of their heat resistance, hardness, long life, and non-polluting properties. α-Se, which is used as a photosensitive layer for
It is superior to CdS, ZnO, OPC, etc.

Such an α-Si photoreceptor is manufactured as follows by using, for example, a glow discharge method. As shown in FIGS. 1 and 2, a drum-shaped base 12 is rotatably housed within the casing 10. As shown in FIGS. The interior space of this casing 10 is previously set to a vacuum state by a diffusion pump 14 and a rotary pump 16. The base body 12 is grounded and rotated around a central axis via a drive mechanism (not shown).
Then, by opening the valve 18,
SiH ₄ gas or SiH ₄ as required, B ₂ H ₆ ,
A mixed gas with Ph ₃ is introduced into the casing 10 . This introduced gas is blown onto the surface of the base 12 through the numerous blow-off ports 22 of the gas introduction pipe 20. Further, the base body 12 is heated by a heater 24. Here, the gas introduction pipe 20 is
It is also used as the cathode electrode of the radio frequency power supply 26. Next, via this power supply 26, a connection is made between the cathode electrode 20 and the base 12.
RF power is applied. Here, since the base body 12 is grounded, this base body 12 acts as an anode electrode with respect to the cathode electrode 20. Therefore, between the gas introduction pipe 20 as a cathode electrode and the base body 12 as an anode electrode,
A glow discharge occurs and SiH ₄ gas is radicalized. In this way, α-Si grows on the surface of the substrate 12 over a predetermined period of time. and,
A photosensitive layer of α-Si is uniformly formed on the surface of the substrate 12 to a predetermined thickness, and the α-Si film formation is completed. When the α-Si film formation is completed, the SiH ₄ gas radicals that did not participate in the film formation are removed by the diffusion pump 14 and the rotary pump 16.
It is sucked from inside the casing 10. After this, the sucked SiH ₄ radicals are transferred to a combustion tower (not shown).
It passes through the scriber and is safely exhausted to the outside air. Next, the casing 10 is opened and α-Si
The photoreceptor is taken out from inside the casing 10.
In this way, the production of one α-Si photoreceptor is completed.

However, manufacturing an α-Si photoreceptor in this way requires a very slow film-forming rate, and requires a pretreatment time to evacuate the inside of the casing 10 and remove residual SiH ₄ radicals from inside the casing 10. It takes a long time for post-processing to discharge, and productivity is extremely poor. Therefore, the manufacturing cost of the α-Si photoreceptor becomes extremely high.

In order to solve this problem, as shown in Fig. 3, there is a method in which drum-shaped substrates 12 are arranged in multiple stages along the axial direction and α-Si is deposited on many substrates 12 at once. , has been proposed in the past. However, in such a method, there is a natural limit to the height of the casing 10, and the height of the base 1 to be set is limited.
2 is limited, and workability when inserting and removing the base body 12 into and out of the casing 10 remains a problem. Furthermore, in such a film formation method,
There is a design requirement that vacuum pumps (not shown) must be installed below the casing 10. For this reason, the density of the gas in the casing 10 differs between the upper and lower parts, resulting in a fatal difference in the thickness of the α-Si photosensitive layer formed depending on each photoreceptor. This method has some drawbacks.

[Purpose of the invention]

This invention was made in view of the above-mentioned circumstances, and an object of the invention is to be able to produce α-Si photoreceptors in large quantities per unit time and with a uniform photosensitive layer thickness. An object of the present invention is to provide a method for manufacturing an amorphous silicon photoreceptor and an apparatus for manufacturing the same.

[Summary of the invention]

The method for manufacturing amorphous silicon according to the present invention includes a first step of placing a plurality of substrates on a carry-in path along the transport direction, and a step of reducing the pressure in a film forming chamber including an endless transport path. a second step of introducing a gas containing at least Si; a third step of generating a discharge in the film forming chamber and converting the gas containing Si into radicals; , a fourth part that sends the substrate through the antechamber.
a fifth step in which the substrate in the film forming chamber is endlessly moved along the transport path and transported again to a predetermined position on the transport path; The invention is characterized in that it includes a sixth step of transporting the container into the unloading path.

Further, the amorphous silicon photoreceptor manufacturing apparatus according to the present invention includes a base, a casing that is attached to the base, includes an endless conveyance path, and has a film forming chamber inside which can accommodate a plurality of substrates; A gas supply means for supplying a gas containing at least Si into the casing, a discharge means for radicalizing the Si-containing gas within the casing, and connected to a predetermined position of the film forming chamber, the end of the carry-in path, and the start end of the carry-out path. a first moving mechanism that is provided on the conveyance path and causes the base body thereon to travel endlessly along the conveyance path; and a second movement mechanism that is provided on the carry-in path and sends out the base body thereon to the waiting room. A third moving mechanism is provided on the carry-out path to move the substrate on which a film has been formed from the starting end to the end, and a third moving mechanism is provided in the waiting room to move the substrate sent out from the carry-in path into the film forming chamber. A fourth section feeds the substrate to a predetermined position, travels endlessly along the conveyance path to form a film, takes the substrate returned to the predetermined position into the waiting room, and sends out the film-formed substrate to the carry-out path.
The present invention is characterized by comprising a moving mechanism, and a vacuum means for selectively evacuating the film forming chamber and the anteroom.

〔Effect of the invention〕

According to the method and apparatus for manufacturing an amorphous silicon photoreceptor according to the present invention, it is possible to manufacture a photoreceptor in large quantities per unit time and with a uniform thickness of the photosensitive layer.

[Embodiments of the invention]

A first embodiment of the amorphous silicon photoreceptor manufacturing method and its manufacturing apparatus according to the present invention will be described below with reference to FIGS. 4 to 17 of the accompanying drawings.
Explain in detail.

As shown in FIGS. 4 and 5, the manufacturing device 28
is equipped with a disc-shaped base 30. This base 30
A casing 32 is attached to the upper part of the casing 32 so as to cover the entire upper surface of the casing 32. This casing 32 keeps the internal space of the casing 32 airtight while being attached to the base 30. The casing 32 stands upright from the outer periphery of the upper surface of the base 30 and includes an outer circumferential wall 34 that is concentric with the base 30 and a top plate 36 that closes the upper edge of the outer circumferential wall 34. There is. A recess 38 is formed in the center of the top plate 36. Walls 40 forming the sides of this recess 38
is defined as the inner peripheral wall of the casing 32.
Further, the space surrounded by the base portion 30 and the casing 32 is defined as a donut-shaped film forming chamber 42 .

Inside the casing 32 and on the upper surface of the base 30, a mounting table 46 is provided on which drum-shaped base bodies 44 for photosensitive drums serving as 16 photosensitive members are mounted. Each mounting table 46 is arranged at equal intervals on the same circumference with respect to the center of the casing 32, and
It stands upright with its central axis aligned with the vertical axis. Each mounting body 46 is rotated around its own central axis (hereinafter referred to as autorotation) and rotated around the center of the base 30 (hereinafter referred to as revolution) via a first moving mechanism 48 to be described later. ing.

A portion of the outer peripheral wall 34 of the casing 32 has a fifth
As shown in the figure, an opening 50 is formed. This opening 50 is defined as an inlet/outlet for the base body 44, and is set to be large enough for one base body 44 to pass through. On the outside of the outer peripheral wall 34 of the casing 32, which has one side including the opening 50,
A waiting room 52 having a rectangular planar shape is connected thereto. A first shutter 54 is attached to this opening 52 so that it can be opened and closed. With this first shutter 54 open, the film forming chamber 42 and the waiting chamber 52
and are brought into communication and kept closed and airtight with each other.

An entrance opening 56 is provided on one side of the waiting room 52 that includes the opening 50 and is adjacent to the left side in the figure.
In addition, there is an inlet opening 5 on the side adjacent to the right side in the figure.
6, an outlet opening 58 is provided in each case. A second shutter 6 is provided at the inlet opening 56 and the outlet opening 58 so as to be able to open and close them.
0 and 3rd shutters 62 are provided, respectively. When the second and third shutters 60 and 62 are open, the anteroom 52 is brought into communication with the outside, and when both are closed, it is kept airtight from the outside. In addition, the inlet opening 56 includes
The terminal end of the carry-in passage 64 and the starting end of the carry-out passage 66 are provided opposite to the outlet opening 58, respectively. Second and third moving mechanisms 68 and 70 are provided on the carry-in path 64 and the carry-out path 64, respectively, and a fourth moving mechanism 72 is provided in the waiting room 52. The second moving mechanism 68 moves the base 44 in the direction shown by the arrow X, and also moves the base 44 onto the fourth moving mechanism 72 in the waiting room 52 in the direction shown by the arrow It is configured to be sent out along the The third moving mechanism 70 is a substrate 44 on which a film has been deposited brought from the waiting room 52, that is, a photosensitive drum 74.
is configured to send in the direction indicated by arrow X. Further, the fourth moving mechanism 72 includes the inlet opening 56
The base body 44 is sent into the waiting room 52 via the
With the first shutter 54 open, the film is sent out onto the first moving mechanism 48 in the film forming chamber 42 along the direction shown by the arrow Y, and when the film forming operation is completed, the film is sent out to the first shutter 54. With the first shutter 54 open, the photosensitive drum 74 brought to the opposing position is taken into the waiting room 52 along the direction opposite to the direction indicated by the arrow Y, and then taken into the third shutter. 62 is opened, it is configured to be delivered onto the third moving mechanism 70 on the delivery path 66 along the direction indicated by the arrow X.

Inside the casing 32, there are an outer circumferential wall 34 and an inner circumferential wall 40 other than the opening 50 provided with the first shutter 54.
along the first and second gas introduction portions 7, respectively.
6,78 are arranged. Each gas introduction part 76,
78 is formed from a conductive material in a hollow cylindrical shape;
Each of them is coaxial with the casing 32.
A large number of gas blowing holes 80 are uniformly formed on the inner circumferential surface of the first gas introducing section 76 and the outer circumferential surface of the second gas introducing section 78. Also, the first gas introduction section 7
A plurality of gas introduction branch pipes 82 are connected to the upper surfaces of each of the gas introduction portions 6 and 78 at equal intervals along the circumferential direction. These gas introduction branch pipes 82 are connected to a common gas introduction main pipe 84, which is connected to a first valve 86.
It is connected to the first gas supply mechanism 88 via. This first gas supply mechanism 88 is for supplying SiH ₄ gas. Here, the plurality of gas introduction branch pipes 82 described above are connected to the top plate 3 of the casing 32.
6 in an airtight manner and is incorporated into the casing 32. Further, a second gas supply mechanism 92 is connected to the anteroom 52 via a second valve 90. This second gas supply mechanism 92 is for supplying N ₂ gas.

On the other hand, one end of a large number of gas outlet branch pipes 94 penetrating through the upper surface of the base 30 and the antechamber 52 are opened through third and fourth valves 96 and 98. These gas outlet branch pipes 94 are connected to the casing 3
They are arranged concentrically at equal intervals with respect to the center of 2. These gas outlet branch pipes 94 are connected to a common gas outlet pipe 100. This gas outlet main 1
00 is the diffusion pump 102 and rotary pump 1
04 to the air cleaning mechanism 106. This air purifying mechanism 106 has a combustion tower, a scriber, etc., although details are not shown.
The gas taken out from inside the casing 32 is cleaned here.

A heater 108 for heating each base 44 housed in the casing 32 is provided on each mounting table 46 . Further, the base body 44 placed on each mounting table 46 is grounded via the mounting table 46 . On the other hand, the first and second gas introduction parts 76 and 78
are the common radio frequency power supply 1
10. In other words, the first and second gas introduction parts 76 and 78 function as cathode electrodes by the power source 110, and the base body 44 functions as an anode electrode with respect to the cathode electrode.
The power supply 110 has an output of 500W and can supply alternating current with a frequency of 13.56MHz.

The base body 44 described above is formed from a thin conductive cylindrical body with an outer diameter of 130 mm. This base 4
Based on the operation described later, over the outer peripheral surface of No. 4,
α-Si is deposited to a predetermined thickness. Incidentally, the outer diameter of the casing 32 for housing 16 base bodies 44 of this size at one time may be 1 m30 cm.

Next, the first moving mechanism 48 within the film forming chamber 42 will be described in detail. As shown in FIG. 6, the first moving mechanism 48 includes a drive base 112 on the upper surface of the base 30 and coaxially therewith. This drive stand 112 has a flat table 114 and a main shaft 116 coaxially fixed to the lower surface of this table 114. The main shaft 116 is rotatably attached to the base 30 via a bearing 118 about its central axis. A first gear 120 is attached to the outer peripheral surface of the table 114 over the entire circumference.
A driving gear 122 is provided on the outer periphery of this table 114.
is rotatably provided, and the drive gear 112 and the first gear 120 mesh with each other. This drive gear 112 is connected to the base 3 via a drive shaft 124.
0 is connected to a motor 126 provided below. This drive shaft 124 passes through the base 30 in the vertical direction.

Each of the mounting tables 46 described above has a disk-shaped rest 128 on which the base 44 is placed, and a rotating shaft 130 coaxially fixed to the lower surface of the rest 128. This rotating shaft 130 is rotatably attached to the table 114 via a bearing 132 (shown in FIG. 4). A second gear 134 is attached to the outer peripheral surface of each rest 128 over the entire circumference. A fixed gear part 136 is attached to the base 30 on the outer periphery of the 16 mounting tables 46 arranged concentrically.
It is fixedly installed. This fixed gear part 13
6 includes a cylindrical upright piece 138 that is attached to the base 30 in an upright manner, and a flange portion 140 that protrudes radially inward from the upper end of the upright piece 138. The center of the inner peripheral edge of this flange portion 140 is set to coincide with the center of the base portion 30. A fixed gear 1 is provided on the inner peripheral surface of the flange portion 140 over the entire circumference.
42 is provided in the shape of an internal gear. This fixed gear 142 and the second gear 134 of each mounting table 46 mesh with each other.

Here, by starting the motor 126,
The drive gear 122 is rotationally driven, and the drive base 112 that meshes with the drive gear 122 is rotationally driven around the central axis of the base 30 in the direction indicated by arrow Z, that is, clockwise. Therefore, each mounting table 46, that is, each base 44,
It revolves around the central axis of the base 30 in a circular trajectory.

On the other hand, since each mounting table 46 is meshed with a fixed gear 142 fixed to the base 30, it is driven to rotate around its rotation axis 130 as it revolves. Therefore, each mounting table 46, that is, each base 44,
Automatically operates around its own central axis.

Regarding the first embodiment configured as above,
The operation will be explained below.

First, as shown in FIG.
Place 4. Next, the first and second shutters 5
4, 60 and close the third shutter 62.
In this state, as shown in FIG. 8, the second moving mechanism 68 sends the foremost base body 44A along the moving direction, that is, the direction indicated by the arrow X, into the waiting chamber 52. As shown in FIG. 9, the fourth moving mechanism 72 in the waiting chamber 52 moves the first substrate 44A along the direction indicated by the arrow Y to the first moving mechanism 48 in the film forming chamber 42. It is sent onto the mounting table 46.

Note that while the first substrate 44A has been sent into the film forming chamber 42, the next substrate 44B is located in the waiting chamber 52 as shown.

In this state shown in FIG. 9, the second shutter 60
, close the third and fourth valves 96 and 98, and open the diffusion pump 102 and rotary pump 10.
4, the inside of the film forming chamber 42 and the waiting chamber 52 are brought into a vacuum state. The pressure inside these chambers 42, 52
When 10 ^-5 torr is reached, both pumps 102,10
4 is stopped, the third and fourth valves 96 and 98 are closed, and the first shutter 54 is closed. In addition, the base 44 is heated at 200°C via the heater 108.
Heat to 300°C. Then, the first valve 86 is opened, and the gas is passed from the first gas supply mechanism 88 through the gas introduction main pipe 84 and the gas introduction branch pipe 82.
SiH ₄ gas is introduced into the first and second gas introduction parts 76, 7.
8 to fill the film forming chamber 42 through the respective blow-off holes 80. In this gas introduction state, the pressure within the film forming chamber 42 is set in the range of 0.1 to 40 torr.

Thereafter, a predetermined voltage is applied between the first and second gas introducing portions 76, 78 and the base 44 via the power source 110 to generate a glow discharge and radicalize the SiH ₄ gas. The radicalized Si is attracted onto the outer peripheral surface of the base 44, and a thin film of α-Si is formed thereon. That is, α-Si as a photosensitive layer
A film is deposited on the outer peripheral surface of the substrate.

Here, the first moving mechanism 48 moves the base 44 from the mounting table 46 to the film forming chamber 42 along the direction indicated by arrow Z.
move. The moving speed of the mounting table 46 by the first moving mechanism 48 is determined when the mounting table 46 is moved from the position indicated by the symbol A in FIG. 5 to the position indicated by the symbol A after going around the film forming chamber 42. It is set so that the film forming operation is completed with a predetermined thickness.

On the other hand, the first base body 44AA is moved together with the mounting table 46 to the position indicated by the symbol B in FIG.
When the next mounting table 46 is brought into the film forming chamber 42 facing the shutter 54, the first shutter 54 is opened as shown in FIG. The base body 44B is moved onto the mounting table 46 located at the position indicated by the symbol A on the first moving mechanism 46. After this, in order to remove the SiH ₄ gas in the anteroom 46, the first shutter 5
4 is closed, the fourth valve 98 is opened, and the inside of the antechamber 52 is evacuated via the rotary pump 104 and the diffusion pump 102. When the interior of the anteroom 52 is brought to a predetermined vacuum state, both pumps 102 and 104
, the fourth valve 98 is closed, the second valve 90 is opened, and N ₂ gas is jetted from the second gas supply mechanism 92 into the anteroom 52 to leak the vacuum state.

After this, the second shutter 60 is opened and the loading path 64 is opened.
Above, the base 4 was waiting adjacent to the waiting room 52.
4c to the waiting room 52 via the second moving mechanism 68.
move inside. Next, the second shutter 60 is closed, the fourth valve 98 is opened, and the interior of the waiting chamber 52 is brought into a predetermined vacuum state via the diffusion pump 102 and the rotary pump 104. And the film forming chamber 42
The base body 44B at the position indicated by the symbol A within the
When the substrate 44c is moved to the position indicated by the symbol B, the first shutter 54 is opened and the substrate 44c in the waiting chamber 52 is moved to the position indicated by the symbol A on the film forming chamber 42 via the fourth moving mechanism 72. Move onto the stand 46.
Thereafter, this operation continues as the first base 44A goes around the film forming chamber 42 and returns to the point A again as shown in FIG.
This continues until it is moved to the position shown.
Note that while the substrate 44 is being moved from the waiting room 52 into the film forming chamber 42, the film forming chamber 42
The film forming operation within is accomplished continuously. Here, the first moving mechanism 4 moves inside the film forming chamber 42.
8, the base 44 on the mounting table 46 is moved by
is the second gear 13 of the rest 128 of the mounting table 46
4 and the fixed gear 142, the base body 44
It performs rotational motion around the central axis. That is,
The substrate 44 moving within the film forming chamber 42 is rotating on its axis.

When the substrate 44A on the first mounting table 46 is moved around the film forming chamber 42 while being subjected to the film forming operation and again to the position indicated by the symbol A, at this point, the substrate 44A is
A photosensitive layer of α-Si is formed on the outer peripheral surface of A to a predetermined thickness. When the substrate 44A on which this photosensitive layer is formed, that is, the photosensitive drum 74, is moved again to the position indicated by the symbol A, the new substrate 44 does not wait in the waiting room 52, but waits on the carry-in path 64. It becomes like this. After evacuating the interior of the waiting room 52, the first shutter 54 is opened as shown in FIG.
is opened, and the photosensitive drum 74 is moved to the waiting room 52 via the fourth moving mechanism 72. Then, the first shutter 54 is closed and the waiting room 52 is filled with water.
The fourth valve 98 is opened to remove the SiH ₄ gas, and the diffusion pump 102 and rotary pump 1 are removed.
The inside of the waiting room 52 is evacuated via the 06. When the anteroom 52 reaches a predetermined degree of vacuum, the fourth valve 98 is closed, both pumps 102 and 104 are stopped, the second valve 90 is opened, and N is supplied from the second gas supply mechanism 92 into the anteroom 52. _2Blow out the gas,
Leak vacuum.

The SiH ₄ gas discharged from the anteroom 52 is purified by the air purification mechanism 106 and released into the external environment.

After this, as shown in FIG.
2 is opened, and the photosensitive drum 74 in the waiting room 52 is moved via the fourth moving mechanism 72 onto the third moving mechanism 70 on the unloading path 66. Then, the third shutter 62 is closed and the second shutter 60 is opened, and as shown in FIG.
Move within 2. Then, the second shutter 60 is closed and the interior of the waiting room 52 is evacuated. After this, the fifth
As shown in the figure, the first shutter 54 is opened and the substrate 44X in the waiting chamber 52 is moved to the position indicated by the symbol A of the first moving mechanism 48 in the film forming chamber 42 via the fourth moving mechanism 72. Move onto a certain mounting table 46.

Then, the mounting table 4 on which the new base body 44X is mounted
6 moves from the position indicated by the symbol A to the position indicated by the symbol B, the mounting table 46 on which the photosensitive drum 74 on which the film forming operation has been completed is brought to the position indicated by the symbol A as shown in FIG. It will be done. In this state, the photosensitive drum 7
4 is introduced from the film forming chamber 42 into the anteroom 52 as shown in FIG. After that, the first shutter 5
4 is closed, and the interior of the anteroom 52 is evacuated based on the operation described above in order to remove the SiH ₄ gas in the anteroom 52. Thereafter, the photosensitive drum 74 is brought to the position indicated by symbol A, and the subsequent operations are automatically repeated until the entire film forming operation is completed.

As described in detail above, according to the first embodiment, when forming a photosensitive drum by forming a film of α-Si on the outer peripheral surface of the drum-shaped base 44, the film forming chamber 52
is always set and maintained in a state where film formation is possible. A new drum is introduced into the film forming chamber 42 through a small anteroom 52.
Therefore, the operation of introducing a new drum-shaped substrate 44 is completed simultaneously with the film forming operation without interfering with this operation. Further, the drum-shaped substrate 44 on which the film has been formed, that is, the photosensitive drum 74, is taken out from the film forming chamber 42 through a waiting chamber 52 which also serves as an introduction operation. Therefore, at the same time as the film forming operation, the film forming chamber 4 of the photosensitive drum 74 is opened without interfering with this operation.
2 is completed.

Here, the waiting chamber 52 is set to be small enough to accommodate one base 44. Therefore, the time required to bring the anteroom 52 into a predetermined vacuum state is extremely short, and during this time, the film forming operation continues, so the overall film forming efficiency is not hindered. You won't be disappointed. That is, by carrying out the photosensitive drum manufacturing operation for a long time in this embodiment, it becomes possible to manufacture a larger number of α-Si photosensitive drums per hour than in the past.

Further, since the substrate 44 moving within the film forming chamber 42 is rotating, the thickness of the photosensitive layer of the formed photosensitive drum is constant. Further, the thickness of the photoreceptor layer for each photoreceptor drum is also uniform.

In addition, since a common anteroom 52 is used for introducing the substrate 44 and for taking out the photosensitive drum 74, less power is required to evacuate the anteroom 52.

This invention is not limited to the configuration and operation of the first embodiment described above, and can be modified in various ways without departing from the gist of the invention.

For example, in the first embodiment described above, the revolving locus of each base body 44 is described as being circular, but this revolving locus may not be a circle but may be an inertial circle or an ellipse. It may also have a rectangular shape with rounded corners as shown in the second embodiment. That is, the casing 144 may be formed in a substantially rectangular shape in plan, and the film forming chamber 146 may also be formed in a substantially rectangular shape in plan.

Further, in the first embodiment described above, it has been explained that the gas supplied from the gas supply mechanism is a gas consisting of SiH ₄ , but the gas is not limited to this, and B ₂ H ₆ , PH ₃ , A mixed gas containing O ₂ may also be used.

Furthermore, in the first embodiment described above, the size of the waiting chamber 52 was described as being large enough to accommodate one base body 44. However, without being limited to this configuration, the waiting room 48 can be
As shown in the figure as a third embodiment, a film forming chamber 4
The size may be set to be large enough to accommodate twice as many base bodies 44 as the number of base bodies 44 housed in the second storage unit. In this case, a large number of substrates 44 waiting in the waiting chamber 148 are introduced into the film forming chamber 42 at once,
A large number of photosensitive drums 7 on which films are formed in the film forming chamber 42
4 are taken out again to the waiting room 148 all at once. By configuring and operating in this way, the intended purpose can also be achieved. still,
In the description of the first and second embodiments mentioned above,
Components similar to those in the first embodiment are given the same reference numerals, and their explanations are omitted.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing a conventional photoreceptor manufacturing apparatus, FIG. 2 is a cross-sectional view of the apparatus shown in FIG. 1, and FIG.
4 is a longitudinal sectional view schematically showing another conventional photoreceptor manufacturing apparatus, FIG. 4 is a longitudinal sectional view showing a first embodiment of the photoreceptor manufacturing apparatus according to the present invention, and FIG.
6 is a partially cutaway perspective view of the first moving mechanism used in the device shown in FIG. 4, and FIGS. 7 to 17 are respective views of the operation of the invention 18 is a cross-sectional view schematically showing a second embodiment of the photoreceptor manufacturing apparatus according to the present invention, and FIG. 19 is a cross-sectional view schematically showing a second embodiment of the photoreceptor manufacturing apparatus according to the present invention. FIG. 3 is a cross-sectional view schematically showing the third embodiment. 30... Base, 32... Casing, 42... Film forming chamber, 44... Base, 48... First moving mechanism, 52...
Waiting room, 64... Carrying in path, 66... Carrying out path, 68... Second moving mechanism, 70... Third moving mechanism, 72... Fourth moving mechanism, 102... Diffusion pump, 104... Rotary pump, 110... Power source.

Claims (1)

[Claims] 1. In a method for manufacturing an amorphous silicon photoreceptor in which an amorphous silicon photoreceptor is manufactured by forming an amorphous silicon photoreceptor layer on the surface of a substrate, a plurality of substrates are placed on a carry-in path along the conveyance direction. A second step of reducing the pressure in the film forming chamber including the endless transport path and introducing a gas containing at least Si into the film forming chamber, and generating an electric discharge in the film forming chamber to remove Si. A third step of converting the gas contained in the film into radicals;
a fourth step of feeding the substrate through the waiting chamber; a fifth step of causing the substrate in the film forming chamber to travel endlessly along the conveyance path to a predetermined position on the conveyance path again; and returning to the predetermined position again. A method for manufacturing an amorphous silicon photoreceptor, comprising a sixth step of sending the substrate on which the film has been formed to a discharge path via a waiting room. 2 The fourth step is to close the first shutter located between the waiting room and the conveyance path, open the second shutter located between the waiting room and the carry-in path, and place the substrate on the carry-in path into the waiting room. a second step of closing the second shutter and evacuating the waiting room; a third step of opening the first shutter and sending out the substrate in the waiting room to the transport path; and a third step of opening the first shutter. 4th to close and depressurize the waiting room.
2. The method of manufacturing an amorphous silicon photoreceptor according to claim 1, further comprising the step of: rotating the substrate in the fifth step. 3. The fourth step is characterized by comprising a fifth step of introducing an inert gas into the front antechamber between the second step and the third step to relieve the reduced pressure. A method for manufacturing an amorphous silicon photoreceptor according to claim 2. 4 In the sixth step, the first shutter located between the waiting room and the transport path is opened, the third shutter located between the waiting room and the transport path is closed, and the film-formed substrate on the transport path is opened. The sixth step is to enter the waiting room, and the seventh step is to close the third shutter and depressurize the waiting room.
The method for manufacturing an amorphous silicon photoconductor according to claim 1, further comprising: a step of opening a third shutter to send out the substrate in the waiting room to a carrying out path. . 5. A patent characterized in that the sixth step includes a ninth step of introducing an inert gas into the antechamber between the seventh step and the eighth step to relieve the reduced pressure. A method for manufacturing an amorphous silicon photoreceptor according to claim 4. 6. The method of manufacturing an amorphous silicon photoreceptor according to claim 5, wherein the first step is performed successively after the eighth step. 7. Claim 1, wherein the fourth step is a step of feeding the substrates one by one.
7. The method for manufacturing an amorphous silicon photoreceptor according to any one of items 6 to 6. 8. The method for manufacturing an amorphous silicon photoconductor according to claim 7, wherein the sixth step is a step of feeding the substrates one by one. 9. The amorphous silicon photoconductor according to any one of claims 1 to 6, wherein the fourth step is a step of feeding as many as can be stored into the film forming chamber at one time. Production method. 10. The method of manufacturing an amorphous silicon photoconductor according to claim 9, wherein the sixth step is a step of feeding as many as can be accommodated into the film forming chamber at one time. 11. An amorphous silicon photoreceptor manufacturing apparatus for manufacturing an amorphous silicon photoreceptor by forming an amorphous silicon photoreceptor layer on the surface of a substrate, including a base, an endless conveyance path attached to the base, A casing whose interior is a film forming chamber capable of accommodating a plurality of substrates, a gas supply means for supplying a gas containing at least Si into the casing, a discharge means for radicalizing the Si containing gas within the casing, and a film forming chamber. a waiting chamber connected to a predetermined position of the chamber, the end of the carry-in path, and the start end of the carry-out path; a first moving mechanism provided on the conveyance path and causing the base body thereon to travel endlessly along the conveyance path; A second moving mechanism is provided on the carry-in path and sends out the substrate on this to the waiting room, and a third moving mechanism is provided on the carry-out path and moves the substrate on which the film has been formed from the start end to the end. , is provided in the waiting room, and sends the substrate sent out from the carry-in path to a predetermined position in the film forming chamber, travels endlessly along the conveyance path to form a film, returns to the specified position, takes the substrate into the waiting room, and carries out the film formation. An amorphous amorphous material, characterized in that it is equipped with a fourth moving mechanism that sends out the processed substrate to an unloading path, and a decompression means that selectively depressurizes the film forming chamber and the anteroom.
Silicon photoconductor manufacturing equipment. 12 The anteroom has a first shutter that can be opened and closed between a predetermined position of the film forming chamber, a second shutter that can be opened and closed between a loading path, and a third shutter that can be opened and closed between a loading path and a predetermined position of the film forming chamber. 12. The amorphous silicon photoconductor manufacturing apparatus according to claim 11, further comprising a shutter. 13. The amorphous silicon photoreceptor manufacturing apparatus according to claim 12, wherein the first moving mechanism rotates the base. 14. Claims 11 to 14 are characterized in that the gas supply means includes a pair of gas introduction portions that extend opposite to each other along the endless running direction of the base body with the base body in between. 14. The amorphous silicon photoreceptor manufacturing apparatus according to any one of Item 13. 15. The amorphous silicon photoreceptor manufacturing method according to claim 14, wherein the discharge means includes a power source, each of the power sources is connected to a pair of gas introduction portions, and each of the bases is grounded. Device. 16. Claims 11 to 15, characterized in that the conveyance path is formed in a circular shape.
2. The amorphous silicon photoreceptor manufacturing apparatus according to any one of the items. 17. The amorphous silicon photoreceptor according to claim 16, wherein the casing is formed in a cylindrical shape, and the center of the casing coincides with the center of a circular movement trajectory by the drive mechanism. Manufacturing equipment. 18 The first moving mechanism includes a disk-shaped drive base having a rotation center that coincides with the center of the casing;
The amorphous amorphous material according to claim 17, further comprising a mounting table on which each of the bases is placed, and a mounting table which is rotatably arranged on a concentric circle on the driving table.・Silicon photoreceptor manufacturing equipment. 19 The above-mentioned mounting table includes a disc-shaped member on which the base is placed, and a first plate formed over the outer periphery of this member.
The first moving mechanism is fixed to the base and has a circular second gear whose center coincides with the center of the casing, the first moving mechanism being capable of meshing with the second gear. An apparatus for producing an amorphous silicon photoreceptor according to claim 18. 20. Claims 11 to 1, characterized in that the conveyance path is formed in an oval shape.
The amorphous silicon photoreceptor manufacturing apparatus according to any one of Item 5. 21. The amorphous silicon photoreceptor manufacturing apparatus according to any one of claims 11 to 15, wherein the conveyance path is formed in a substantially rectangular shape. 22. Manufacturing an amorphous silicon photoreceptor according to any one of claims 11 to 21, wherein the waiting chamber is formed in a size sufficient to accommodate one substrate. Device. 23. Claim 1, wherein the waiting chamber is formed in a size sufficient to accommodate the same number of substrates as can be accommodated in the film forming chamber.
The amorphous silicon photoreceptor manufacturing apparatus according to any one of items 1 to 21.