JPH0361636B2 - - Google Patents
Info
- Publication number
- JPH0361636B2 JPH0361636B2 JP21698487A JP21698487A JPH0361636B2 JP H0361636 B2 JPH0361636 B2 JP H0361636B2 JP 21698487 A JP21698487 A JP 21698487A JP 21698487 A JP21698487 A JP 21698487A JP H0361636 B2 JPH0361636 B2 JP H0361636B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- crystal
- semiconductor
- substrate
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000007791 liquid phase Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 description 10
- 239000000370 acceptor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21698487A JPS6461398A (en) | 1987-08-31 | 1987-08-31 | Liquid phase epitaxial growth for semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21698487A JPS6461398A (en) | 1987-08-31 | 1987-08-31 | Liquid phase epitaxial growth for semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6461398A JPS6461398A (en) | 1989-03-08 |
| JPH0361636B2 true JPH0361636B2 (de) | 1991-09-20 |
Family
ID=16696996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21698487A Granted JPS6461398A (en) | 1987-08-31 | 1987-08-31 | Liquid phase epitaxial growth for semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461398A (de) |
-
1987
- 1987-08-31 JP JP21698487A patent/JPS6461398A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6461398A (en) | 1989-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0140565A1 (de) | Verfahren zur Züchtung von Halbleiterkristallen von Multikomponentenverbindungen | |
| US3715245A (en) | Selective liquid phase epitaxial growth process | |
| Giess et al. | The growth of high quality CdxHg1− xTe by MOVPE onto GaAs substrates | |
| US4948751A (en) | Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor | |
| US4142924A (en) | Fast-sweep growth method for growing layers using liquid phase epitaxy | |
| JPH0361636B2 (de) | ||
| Missous et al. | Low‐temperature molecular beam epitaxy of gallium arsenide | |
| Widmer et al. | Liquid phase epitaxy on zinc telluride | |
| Steiner et al. | Silicon layers on polycrystalline silicon substrates—influence of growth parameters during liquid phase epitaxy | |
| JP2543791B2 (ja) | 液相エピタキシャル成長法 | |
| EP0093569B1 (de) | Verfahren zur Flüssigphasenepitaxie | |
| Knoll et al. | Method for preparation of thin, oriented GaAs crystals | |
| JPH0372680A (ja) | 半導体材料、光電子集積回路素子並びに材料の結晶成長法 | |
| US4609411A (en) | Liquid-phase epitaxial growth method of a IIIb-Vb group compound | |
| EP0175436A2 (de) | Behandlung von Halbleitern | |
| van Oirschot et al. | LPE growth of DH laser structures with the double source method | |
| JPS5935589Y2 (ja) | 液相式結晶成長装置 | |
| US5585305A (en) | Method for fabricating a semiconductor device | |
| JPS5795620A (en) | Method for adding impurity | |
| JPH026383A (ja) | 半導体結晶成長装置 | |
| JP2730235B2 (ja) | 液相エピタキシヤル成長用るつぼ | |
| JP2001135586A (ja) | エピタキシャル成長装置および半導体装置の製造方法 | |
| JP3451658B2 (ja) | 混晶半導体単結晶の成長方法 | |
| JPH0563235A (ja) | 半導体素子の製造方法 | |
| McDermott | Application of atomic layer epitaxy to the growth of III-V compounds. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |