JPH0361287B2 - - Google Patents
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- Publication number
- JPH0361287B2 JPH0361287B2 JP57174185A JP17418582A JPH0361287B2 JP H0361287 B2 JPH0361287 B2 JP H0361287B2 JP 57174185 A JP57174185 A JP 57174185A JP 17418582 A JP17418582 A JP 17418582A JP H0361287 B2 JPH0361287 B2 JP H0361287B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- oxide
- dielectric
- temperature change
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000203 mixture Substances 0.000 claims description 26
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 238000010304 firing Methods 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KAGOZRSGIYZEKW-UHFFFAOYSA-N cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Co+3].[Co+3] KAGOZRSGIYZEKW-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
本発明は高誘電率磁器誘電体組成物に係り、特
に、誘電率が高く、しかも該誘電率の温度変化率
の小さい、積層コンデンサ用として好適な磁器誘
電体組成物に関するものである。
従来、平坦な誘電率温度特性を有する磁器誘電
体としては、チタン酸バリウム（BaTiO3）およ
び酸化ビスマス（Bi2O3）を主成分とし、これに
酸化スズ（SnO2）または酸化チタン（TiO2）あ
るいは酸化ジルコニウム（ZrO2）を添加したも
のがあるが、何れも−30℃から＋85℃の温度範囲
において誘電率の温度変化率を小さく、例えば±
15％以内にしようとすると、誘電率が低く、例え
ば3000以下となり、また誘電率が3000以上のもの
では、その誘電率の温度変化率は上記温度範囲に
おいて大きくならざるを得なかつた。
一方、かかる問題を解消する磁器誘電体組成物
として、BaTiO3及びBi2O3に、Nb2O5と、CeO2
またはLa2O3とを加え、これによつて小さな誘電
率温度変化率で、しかも高い誘電率を達成しよう
とする試みが、特公昭55−21402号公報に明らか
にされている。しかしながら、そのような組成物
にあつては、該組成物中に含まれるBi2O3が、積
層コンデンサを作る場合において、高い焼成温度
が採用されると、蒸発せしめられ、それによつて
電極を傷める問題を生じ、それ故Bi2O3の如き成
分を含む組成物は、積層コンデンサ用としては不
適当なものであつたのである。
本発明は、かかる事情を背景にして為されたも
のであつて、その目的とするところは、平坦な誘
電率温度変化特性を有し、しかも高誘電率であ
る、積層コンデンサ用として好適な磁器誘電体を
提供することにある。
而して、本発明に係る高誘電率磁器誘電体組成
物は、純度が99％以上の炭酸バリウム（BaCO3）
と純度が99％以上の酸化チタン（TiO2）から形
成される高純度のチタン酸バリウム（BaTiO3）
が96.225〜97.625％を占め、残部が0.08〜0.25％
の酸化コバルト（Co2O3）と、1.0〜1.5％の酸化
ニオブ（Nb2O5）と、0.10〜0.25％の酸化セリウ
ム（CeO2）と、0.1〜0.4％の酸化亜鉛（ZnO）、
並びに0.5〜1.5％の酸化バリウム（BaO）からな
るものである（何れも百分率は重量基準である。）
かくの如き本発明に従う組成の磁器誘電体組成
物によれば、高誘電率にして、その温度変化率の
小さなものが具現され、特に−55℃から＋125℃
の温度範囲内において＋25℃の誘電率を基準とし
たとき、その誘電率の温度変化率が±15％以内で
誘電率を3300以上に有利に為し得、さらには3600
以上の誘電率を有するものをも有利に得ることが
できるのである。
また、かかる本発明に従う、焼成して得られる
磁器誘電体組成物にあつては、Bi2O3、PbO等の
蒸発成分を含有していないために、高温の焼成温
度が採用されても電極を傷めるようなことは全く
なく、それ故積層コンデンサ用として好適に用い
られ得るものである。
なお、本発明においては、高純度のBaTiO3成
分を96.225〜97.625％の割合で組成物中に存在せ
しめる必要があり、その含有割合が少ないと、誘
電率が著しく低下し、誘電率の温度変化率も大と
なり、一方逆にかかる割合より多くても誘電率は
低下してしまう等の問題を生じるのである。そし
て、この高純度のBaTiO3は、従来のBaTiO3が
97〜98％程度のBaCO3と98〜99％程度のTiO2を
用いて形成されているのに対して、それぞれ純度
が99％以上、好ましくは99.5％以上の、高度に精
製されたBaCO3とTiO2を用いて形成されるもの
であつて、このような高純度の出発原料を用いて
初めて高純度のBaTiO3が得られるのである。ま
た、この高純度のBaTiO3は、他の成分との焼成
に先立つてBaCO3とTiO2とを仮焼することによ
り得られるものを用いることによつて導入される
他、他の成分との焼成時にBaCO3とTiO2を反応
せしめて焼成と同時に、本発明に従う磁器誘電体
組成物中に導入するようにすることも可能であ
る。
また、本発明に係る組成物を構成するCo2O3成
分は、誘電率の温度変化率を平坦化せしめる成分
であり、その含有割合が少な過ぎれば、誘電率の
温度変化率が大となり、反対に多ければ、誘電率
が低くなるため、0.08〜0.25％の割合で存在せし
める必要がある。
これと同様に、Nb2O5成分も誘電率の温度変化
率を平坦化せしめる作用を有するが、その割合が
少ないときには焼結不良の問題が惹起され、結果
として誘電率の低下を招き、他方多いときには誘
電率の温度変化率が大きくなるので、1.00〜1.50
％の割合にて、含有せしめられる必要があるので
ある。
更に、本発明の組成物中のCeO2成分は焼成温
度を低下せしめる効果があるが、その割合があま
りにも少な過ぎたり、またあまりにも多過ぎたり
すると、誘電率の改善効果が充分に達成され得な
くなつたり、誘電率の温度変化率が大となつたり
する問題がある。それ故、CeO2の割合は0.10〜
0.25％とする必要がある。
そしてまた、ZnO成分は、BaOと共存のもと
に誘電損失の改善に寄与するものであるが、その
割合が多過ぎると誘電率の温度変化率を大きくし
たり、絶縁抵抗を低下せしめたり、誘電損失
（tanδ）を大きくするので0.10〜0.40％の含有割
合とする必要がある。
更にまた、組成物中のBaO成分は、誘電率の
温度変化率を平坦にする効果を奏するもので、前
記高純度のBaTiO3の形成に際して過剰のBaCO3
をTiO2と組み合わせることによつて導入され得
るものである他、必要な量のBaOをBaCO3の形
で別途に原料組成物中に配合せしめて、これを焼
成することによつても導入せしめられ得るもので
ある。そして、その含有割合は、それが多過ぎた
りすると、焼結不良の原因となり、結果として誘
電率の低下を招くので、0.5〜1.5％とする必要が
ある（何れも百分率は重量規準）。
また、これらの各成分は原料としてその酸化物
そのものを使用することによつて導入されるもの
である他、塩化物、炭酸塩などの形態のものを焼
成に供して、目的とする酸化物成分が磁器誘電体
組成物に形成されるようにすることも可能であ
る。
このように、本発明は、特定のBaTiO3と、
Co2O3、Nb2O5、CeO2、ZnO、BaOとを所定割
合で、磁器誘電体組成物を構成せしめることによ
り、前述した如き数々の優れた特徴を発揮し得た
のである。
以下に実施例を挙げ、本発明を更に具体的に明
らかにするが、本発明がかかる実施例の記載によ
つて何等の制約をも受けるものでないことは言う
までもないところである。なお、実施例中の部及
び百分率はすべて重量基準で示されている。
実施例
第１表に示される組成の磁器誘電体組成物を与
えるように、各成分原料をボールミルにて均一に
湿式混合せしめ、ついで900〜1000℃で３時間の
間仮焼して化学反応を行なわしめた後、再びボー
ルミルにて平均粒径が１ミクロン程度になるまで
粉砕した。なお、高純度BaTiO3成分を形成する
ために、純度が99.5％のBaCO3と純度が99.9％の
TiO2が用いられ、他の成分と共に、前記ボール
ミルにて湿式混合せしめられた。
ついで、この混合物を乾燥せしめた後、粘結剤
としてポリビニルアルコールを適当量加え、約１
トン／cm2の圧力にて成形し、直径16ｍ／ｍ、厚さ
0.5ｍ／ｍの円板状成形物を作製した。
さらに、かくして得られた成形物に対して、約
1330〜1350℃の温度で、３時間の本焼成操作を施
した後、得られた焼成物についてその両面に銀電
極を焼き付けることにより試料と為し、ついで
3000時間、試料厚さ１mmあたり10KV印加の寿命
試験を行なつた後、それぞれの電気的諸特性を測
定して、その結果を第２表に示した。
第１表及び第２表の結果より明らかなように、
本発明に従う組成からなる磁器誘電体組成物は、
−55℃から＋125℃の温度範囲内において＋25℃
の誘電率を基準としたとき、3000以上の誘電率で
あつても、その温度変化率が小さく、特に誘電率
の温度変化率が±7.5％以内で誘電率が3300以上、
また温度変化率が±15％以内では3600以上である
ものも得ることが出来、しかもそれらは誘電損失
（tanδ）の小さな特性を具備しているのである。
また、これとは別に、現用に供されている市販
のBaTiO3系の磁器誘電体組成物では、同一諸特
性のもとにおいて、誘電率の温度変化率を±7.5
％以内としたとき誘電率は2400程度、±15％以内
としたときには2900程度であつて、本発明の磁器
誘電体組成物に比し著しく劣るものであつた。
さらに、BaTiO3の純度の異なるものを用いた
結果が第３表及び第４表に示されているが、これ
らの結果から明らかなように、その純度を99％以
上とした高純度のものにあつては、誘電率、変化
率、誘電損失とも著しく改善されていることが認
められる。
The present invention relates to a ceramic dielectric composition with a high dielectric constant, and in particular to a ceramic dielectric composition that has a high dielectric constant and a small rate of change in dielectric constant with temperature, and is suitable for use in multilayer capacitors. Conventionally, porcelain dielectrics with flat permittivity-temperature characteristics have been mainly composed of barium titanate (BaTiO 3 ) and bismuth oxide (Bi 2 O 3 ), with tin oxide (SnO 2 ) or titanium oxide (TiO 2 ) Or, there are products with added zirconium oxide (ZrO 2 ), but both of them reduce the temperature change rate of the dielectric constant in the temperature range of -30℃ to +85℃, for example, ±
If the dielectric constant is to be within 15%, the dielectric constant will be low, for example, 3000 or less, and if the dielectric constant is 3000 or more, the temperature change rate of the dielectric constant must be large in the above temperature range. On the other hand, as a porcelain dielectric composition that solves this problem, BaTiO 3 and Bi 2 O 3 are combined with Nb 2 O 5 and CeO 2
Japanese Patent Publication No. 55-21402 discloses an attempt to achieve a high dielectric constant with a small temperature change rate of the dielectric constant by adding or La 2 O 3 . However, in such compositions, the Bi 2 O 3 contained in the composition is evaporated when high firing temperatures are employed in making multilayer capacitors, thereby damaging the electrodes. compositions containing components such as Bi 2 O 3 were therefore unsuitable for use in multilayer capacitors. The present invention has been made against this background, and its object is to provide a ceramic material suitable for multilayer capacitors, which has a flat dielectric constant temperature change characteristic and has a high dielectric constant. The objective is to provide a dielectric material. Therefore, the high permittivity ceramic dielectric composition according to the present invention is made of barium carbonate (BaCO 3 ) with a purity of 99% or more.
High purity barium titanate (BaTiO 3 ) formed from titanium oxide (TiO 2 ) with a purity of over 99%
accounts for 96.225~97.625%, and the remainder is 0.08~0.25%
cobalt oxide (Co 2 O 3 ), 1.0-1.5% niobium oxide (Nb 2 O 5 ), 0.10-0.25% cerium oxide (CeO 2 ), and 0.1-0.4% zinc oxide (ZnO),
and 0.5 to 1.5% barium oxide (BaO) (all percentages are based on weight). According to the porcelain dielectric composition according to the present invention, it has a high dielectric constant, The temperature change rate is small, especially from -55℃ to +125℃.
When the dielectric constant of +25℃ is used as the standard within the temperature range of
It is also possible to advantageously obtain a material having a dielectric constant higher than that. Furthermore, since the porcelain dielectric composition obtained by firing according to the present invention does not contain evaporable components such as Bi 2 O 3 and PbO, it does not cause electrode damage even if a high firing temperature is employed. It does not cause any damage at all, and therefore can be suitably used for multilayer capacitors. In addition, in the present invention, it is necessary that the high-purity BaTiO 3 component be present in the composition at a ratio of 96.225 to 97.625%; if the content ratio is small, the dielectric constant decreases significantly, and the temperature change in the dielectric constant On the other hand, even if the ratio is higher than the above ratio, problems such as a decrease in the dielectric constant occur. And this high purity BaTiO 3 is superior to conventional BaTiO 3 .
It is formed using about 97-98% BaCO 3 and about 98-99% TiO 2 , whereas highly purified BaCO 3 with a purity of 99% or more, preferably 99.5% or more, respectively It is formed using BaTiO 2 and TiO 2 , and high purity BaTiO 3 can only be obtained using such a high purity starting material. In addition, this high-purity BaTiO 3 can be introduced by using a product obtained by calcining BaCO 3 and TiO 2 prior to calcination with other components, or by combining it with other components. It is also possible to react BaCO 3 and TiO 2 during firing and introduce them into the porcelain dielectric composition according to the invention simultaneously with firing. Further, the Co 2 O 3 component constituting the composition according to the present invention is a component that flattens the temperature change rate of the dielectric constant, and if its content is too small, the temperature change rate of the dielectric constant becomes large. On the other hand, if the amount is large, the dielectric constant will be low, so it is necessary to make it exist at a ratio of 0.08 to 0.25%. Similarly, the Nb 2 O 5 component also has the effect of flattening the temperature change rate of the dielectric constant, but when its proportion is small, it causes the problem of poor sintering, resulting in a decrease in the dielectric constant. When the temperature is high, the temperature change rate of the dielectric constant becomes large, so it is 1.00 to 1.50.
% of the content. Furthermore, although the CeO2 component in the composition of the present invention has the effect of lowering the firing temperature, if its proportion is too small or too large, the effect of improving the dielectric constant may not be fully achieved. There are problems in that the temperature change rate of the dielectric constant becomes large. Therefore, the proportion of CeO2 is 0.10 ~
It needs to be 0.25%. Furthermore, the ZnO component contributes to improving dielectric loss by coexisting with BaO, but if its proportion is too large, it may increase the temperature change rate of dielectric constant, reduce insulation resistance, Since it increases the dielectric loss (tan δ), the content needs to be 0.10 to 0.40%. Furthermore, the BaO component in the composition has the effect of flattening the temperature change rate of the dielectric constant, and when forming the high-purity BaTiO 3 , excess BaCO 3 is removed.
In addition to being able to be introduced by combining BaCO with TiO 2 , it can also be introduced by separately blending the required amount of BaO in the form of BaCO 3 into the raw material composition and firing it. This is something that can be done. The content ratio needs to be 0.5 to 1.5% (all percentages are based on weight), since too much will cause poor sintering and result in a decrease in dielectric constant. In addition, each of these components can be introduced by using the oxide itself as a raw material, or by calcination in the form of chloride, carbonate, etc. to obtain the desired oxide component. It is also possible to form the porcelain dielectric composition. Thus, the present invention provides specific BaTiO 3 and
By composing a porcelain dielectric composition of Co 2 O 3 , Nb 2 O 5 , CeO 2 , ZnO, and BaO in predetermined proportions, the many excellent characteristics described above could be exhibited. Examples will be given below to clarify the present invention more specifically, but it goes without saying that the present invention is not limited in any way by the description of these Examples. Note that all parts and percentages in the examples are expressed on a weight basis. Examples In order to obtain a porcelain dielectric composition having the composition shown in Table 1, the raw materials for each component were wet-mixed uniformly in a ball mill, and then calcined at 900 to 1000°C for 3 hours to induce a chemical reaction. After this, the mixture was ground again in a ball mill until the average particle size was about 1 micron. In addition, in order to form the high purity BaTiO 3 component, BaCO 3 with a purity of 99.5% and BaCO 3 with a purity of 99.9% are used.
TiO 2 was used and wet mixed with the other ingredients in the ball mill. Next, after drying this mixture, an appropriate amount of polyvinyl alcohol was added as a binder to give a
Molded at a pressure of ton/ cm2 , diameter 16m/m, thickness
A disc-shaped molded product with a diameter of 0.5 m/m was produced. Furthermore, for the molded product thus obtained, approximately
After performing the main firing operation at a temperature of 1330 to 1350°C for 3 hours, the obtained fired product was used as a sample by baking silver electrodes on both sides, and then
After carrying out a life test in which 10 KV was applied per 1 mm of sample thickness for 3000 hours, the various electrical characteristics of each were measured and the results are shown in Table 2. As is clear from the results in Tables 1 and 2,
The porcelain dielectric composition comprising the composition according to the present invention is
+25℃ within the temperature range of -55℃ to +125℃
Even if the dielectric constant is 3000 or more, the temperature change rate is small, especially when the temperature change rate of the dielectric constant is within ±7.5% and the dielectric constant is 3300 or more.
Further, it is possible to obtain materials with a temperature change rate of 3600 or more within ±15%, and they also have the characteristic of having a small dielectric loss (tan δ). Separately, in the commercially available BaTiO 3 -based porcelain dielectric composition currently in use, the temperature change rate of permittivity is ±7.5 under the same characteristics.
The dielectric constant was about 2,400 when it was within ±15%, and about 2,900 when it was within ±15%, which was significantly inferior to the ceramic dielectric composition of the present invention. Furthermore, Tables 3 and 4 show the results using BaTiO 3 with different purity levels, and as is clear from these results, high purity BaTiO 3 with a purity of 99% or higher was used. In some cases, it is recognized that the dielectric constant, rate of change, and dielectric loss are all significantly improved.
【表】【table】
【表】【table】
【表】
基準としたときの誘電率の温度変
化率を示す。
[Table] Shows the temperature change rate of dielectric constant when used as a reference.
【表】【table】
【表】
の温度変化率を示す。
[Table] shows the temperature change rate.
Claims (1)
99％以上の酸化チタンから形成される高純度のチ
タン酸バリウムが96.225〜97.625％を占め、残部
が0.08〜0.25％の酸化コバルトと、1.0〜1.5％の
酸化ニオブと、0.10〜0.25％の酸化セリウムと、
0.1〜0.4％の酸化亜鉛、並びに0.5〜1.5％の酸化
バリウムからなる高誘電率磁器誘電体組成物。1 Barium carbonate with a purity of 99% or more and
High purity barium titanate formed from more than 99% titanium oxide accounts for 96.225~97.625%, the balance is 0.08~0.25% cobalt oxide, 1.0~1.5% niobium oxide, and 0.10~0.25% oxide. Cerium and
A high permittivity porcelain dielectric composition consisting of 0.1-0.4% zinc oxide and 0.5-1.5% barium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174185A JPS5963605A (en) | 1982-10-04 | 1982-10-04 | High dielectric constant porcelain dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174185A JPS5963605A (en) | 1982-10-04 | 1982-10-04 | High dielectric constant porcelain dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5963605A JPS5963605A (en) | 1984-04-11 |
| JPH0361287B2 true JPH0361287B2 (en) | 1991-09-19 |
Family
ID=15974198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57174185A Granted JPS5963605A (en) | 1982-10-04 | 1982-10-04 | High dielectric constant porcelain dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5963605A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61275164A (en) * | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | Dielectric ceramic composition having high permittivity and flat tc properties |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| JPH0512997Y2 (en) * | 1989-12-14 | 1993-04-06 | ||
| US5086021A (en) * | 1990-06-28 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Dielectric composition |
-
1982
- 1982-10-04 JP JP57174185A patent/JPS5963605A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5963605A (en) | 1984-04-11 |
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